JP2009194224A5 - - Google Patents
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- Publication number
- JP2009194224A5 JP2009194224A5 JP2008034903A JP2008034903A JP2009194224A5 JP 2009194224 A5 JP2009194224 A5 JP 2009194224A5 JP 2008034903 A JP2008034903 A JP 2008034903A JP 2008034903 A JP2008034903 A JP 2008034903A JP 2009194224 A5 JP2009194224 A5 JP 2009194224A5
- Authority
- JP
- Japan
- Prior art keywords
- band gap
- metal oxide
- magnetization
- fixed
- barrier layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005415 magnetization Effects 0.000 claims 13
- 229910044991 metal oxide Inorganic materials 0.000 claims 8
- 150000004706 metal oxides Chemical class 0.000 claims 8
- 230000004888 barrier function Effects 0.000 claims 5
- 239000003302 ferromagnetic material Substances 0.000 claims 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 2
- 230000000694 effects Effects 0.000 claims 2
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 claims 1
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 claims 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims 1
- 239000000395 magnesium oxide Substances 0.000 claims 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims 1
- 239000011787 zinc oxide Substances 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008034903A JP2009194224A (ja) | 2008-02-15 | 2008-02-15 | 磁気抵抗効果素子、ヘッドスライダ、磁気情報再生装置および磁気抵抗効果メモリ |
| US12/371,011 US20090207532A1 (en) | 2008-02-15 | 2009-02-13 | Magneto resistance effect device, head slider, magnetic information storage apparatus, and magneto resistance effect memory |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008034903A JP2009194224A (ja) | 2008-02-15 | 2008-02-15 | 磁気抵抗効果素子、ヘッドスライダ、磁気情報再生装置および磁気抵抗効果メモリ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009194224A JP2009194224A (ja) | 2009-08-27 |
| JP2009194224A5 true JP2009194224A5 (enExample) | 2010-11-11 |
Family
ID=40954894
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008034903A Pending JP2009194224A (ja) | 2008-02-15 | 2008-02-15 | 磁気抵抗効果素子、ヘッドスライダ、磁気情報再生装置および磁気抵抗効果メモリ |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US20090207532A1 (enExample) |
| JP (1) | JP2009194224A (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5480321B2 (ja) | 2012-03-21 | 2014-04-23 | 株式会社東芝 | 磁気メモリ及びその製造方法 |
| JP5924309B2 (ja) * | 2013-06-27 | 2016-05-25 | Ｊｆｅスチール株式会社 | 移動式ラインカメラの光学系画像補正方法 |
| CN108511602B (zh) * | 2017-02-28 | 2021-07-13 | 中电海康集团有限公司 | Mtj单元及stt-mram |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6480365B1 (en) * | 1999-12-09 | 2002-11-12 | International Business Machines Corporation | Spin valve transistor using a magnetic tunnel junction |
| JP2001345497A (ja) * | 2000-06-01 | 2001-12-14 | Canon Inc | 強磁性スピントンネル効果素子 |
| JP2002319722A (ja) * | 2001-01-22 | 2002-10-31 | Matsushita Electric Ind Co Ltd | 磁気抵抗効果素子とその製造方法 |
| US6528896B2 (en) * | 2001-06-21 | 2003-03-04 | Samsung Electronics Co., Ltd. | Scalable two transistor memory device |
| DE10202903B4 (de) * | 2002-01-25 | 2009-01-22 | Qimonda Ag | Magnetoresistive Speicherzelle mit polaritätsabhängigem Widerstand und Speicherzelle |
| US7252852B1 (en) * | 2003-12-12 | 2007-08-07 | International Business Machines Corporation | Mg-Zn oxide tunnel barriers and method of formation |
| US7300711B2 (en) * | 2004-10-29 | 2007-11-27 | International Business Machines Corporation | Magnetic tunnel junctions with high tunneling magnetoresistance using non-bcc magnetic materials |
| US7443639B2 (en) * | 2005-04-04 | 2008-10-28 | International Business Machines Corporation | Magnetic tunnel junctions including crystalline and amorphous tunnel barrier materials |
| US7230265B2 (en) * | 2005-05-16 | 2007-06-12 | International Business Machines Corporation | Spin-polarization devices using rare earth-transition metal alloys |
| TWI267944B (en) * | 2005-08-03 | 2006-12-01 | Ind Tech Res Inst | Non-volatile memory device and fabricating method thereof |
| US8063459B2 (en) * | 2007-02-12 | 2011-11-22 | Avalanche Technologies, Inc. | Non-volatile magnetic memory element with graded layer |
| JP4834834B2 (ja) * | 2006-05-08 | 2011-12-14 | 国立大学法人東北大学 | トンネル磁気抵抗素子、不揮発性磁気メモリ、発光素子および３端子素子 |
| US7851840B2 (en) * | 2006-09-13 | 2010-12-14 | Grandis Inc. | Devices and circuits based on magnetic tunnel junctions utilizing a multilayer barrier |
| US7715156B2 (en) * | 2007-01-12 | 2010-05-11 | Tdk Corporation | Tunnel magnetoresistive effect element and thin-film magnetic head with tunnel magnetoresistive effect read head element |
| US8289663B2 (en) * | 2008-04-25 | 2012-10-16 | Headway Technologies, Inc. | Ultra low RA (resistance x area) sensors having a multilayer non-magnetic spacer between pinned and free layers |
| US8059374B2 (en) * | 2009-01-14 | 2011-11-15 | Headway Technologies, Inc. | TMR device with novel free layer structure |
-
2008
- 2008-02-15 JP JP2008034903A patent/JP2009194224A/ja active Pending
-
2009
- 2009-02-13 US US12/371,011 patent/US20090207532A1/en not_active Abandoned
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