JP2009194224A - 磁気抵抗効果素子、ヘッドスライダ、磁気情報再生装置および磁気抵抗効果メモリ - Google Patents

磁気抵抗効果素子、ヘッドスライダ、磁気情報再生装置および磁気抵抗効果メモリ Download PDF

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Publication number
JP2009194224A
JP2009194224A JP2008034903A JP2008034903A JP2009194224A JP 2009194224 A JP2009194224 A JP 2009194224A JP 2008034903 A JP2008034903 A JP 2008034903A JP 2008034903 A JP2008034903 A JP 2008034903A JP 2009194224 A JP2009194224 A JP 2009194224A
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JP
Japan
Prior art keywords
band gap
metal oxide
magnetization
high band
gap metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008034903A
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English (en)
Japanese (ja)
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JP2009194224A5 (enExample
Inventor
Atsushi Furuya
篤史 古屋
Yuji Uehara
裕二 上原
Kenji Noma
賢二 野間
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Fujitsu Ltd
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Fujitsu Ltd
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Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2008034903A priority Critical patent/JP2009194224A/ja
Priority to US12/371,011 priority patent/US20090207532A1/en
Publication of JP2009194224A publication Critical patent/JP2009194224A/ja
Publication of JP2009194224A5 publication Critical patent/JP2009194224A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3909—Arrangements using a magnetic tunnel junction
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
    • H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F41/305—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices applying the spacer or adjusting its interface, e.g. in order to enable particular effect different from exchange coupling
    • H01F41/307—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices applying the spacer or adjusting its interface, e.g. in order to enable particular effect different from exchange coupling insulating or semiconductive spacer

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Magnetic Heads (AREA)
JP2008034903A 2008-02-15 2008-02-15 磁気抵抗効果素子、ヘッドスライダ、磁気情報再生装置および磁気抵抗効果メモリ Pending JP2009194224A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2008034903A JP2009194224A (ja) 2008-02-15 2008-02-15 磁気抵抗効果素子、ヘッドスライダ、磁気情報再生装置および磁気抵抗効果メモリ
US12/371,011 US20090207532A1 (en) 2008-02-15 2009-02-13 Magneto resistance effect device, head slider, magnetic information storage apparatus, and magneto resistance effect memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008034903A JP2009194224A (ja) 2008-02-15 2008-02-15 磁気抵抗効果素子、ヘッドスライダ、磁気情報再生装置および磁気抵抗効果メモリ

Publications (2)

Publication Number Publication Date
JP2009194224A true JP2009194224A (ja) 2009-08-27
JP2009194224A5 JP2009194224A5 (enExample) 2010-11-11

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JP2008034903A Pending JP2009194224A (ja) 2008-02-15 2008-02-15 磁気抵抗効果素子、ヘッドスライダ、磁気情報再生装置および磁気抵抗効果メモリ

Country Status (2)

Country Link
US (1) US20090207532A1 (enExample)
JP (1) JP2009194224A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015012355A (ja) * 2013-06-27 2015-01-19 Ｊｆｅスチール株式会社 移動式ラインカメラの光学系画像補正方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5480321B2 (ja) 2012-03-21 2014-04-23 株式会社東芝 磁気メモリ及びその製造方法
CN108511602B (zh) * 2017-02-28 2021-07-13 中电海康集团有限公司 Mtj单元及stt-mram

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001345497A (ja) * 2000-06-01 2001-12-14 Canon Inc 強磁性スピントンネル効果素子
JP2002319722A (ja) * 2001-01-22 2002-10-31 Matsushita Electric Ind Co Ltd 磁気抵抗効果素子とその製造方法
JP2007305610A (ja) * 2006-05-08 2007-11-22 Tohoku Univ トンネル磁気抵抗素子、不揮発性磁気メモリ、発光素子および３端子素子

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US6480365B1 (en) * 1999-12-09 2002-11-12 International Business Machines Corporation Spin valve transistor using a magnetic tunnel junction
US6528896B2 (en) * 2001-06-21 2003-03-04 Samsung Electronics Co., Ltd. Scalable two transistor memory device
DE10202903B4 (de) * 2002-01-25 2009-01-22 Qimonda Ag Magnetoresistive Speicherzelle mit polaritätsabhängigem Widerstand und Speicherzelle
US7252852B1 (en) * 2003-12-12 2007-08-07 International Business Machines Corporation Mg-Zn oxide tunnel barriers and method of formation
US7300711B2 (en) * 2004-10-29 2007-11-27 International Business Machines Corporation Magnetic tunnel junctions with high tunneling magnetoresistance using non-bcc magnetic materials
US7443639B2 (en) * 2005-04-04 2008-10-28 International Business Machines Corporation Magnetic tunnel junctions including crystalline and amorphous tunnel barrier materials
US7230265B2 (en) * 2005-05-16 2007-06-12 International Business Machines Corporation Spin-polarization devices using rare earth-transition metal alloys
TWI267944B (en) * 2005-08-03 2006-12-01 Ind Tech Res Inst Non-volatile memory device and fabricating method thereof
US8063459B2 (en) * 2007-02-12 2011-11-22 Avalanche Technologies, Inc. Non-volatile magnetic memory element with graded layer
US7851840B2 (en) * 2006-09-13 2010-12-14 Grandis Inc. Devices and circuits based on magnetic tunnel junctions utilizing a multilayer barrier
US7715156B2 (en) * 2007-01-12 2010-05-11 Tdk Corporation Tunnel magnetoresistive effect element and thin-film magnetic head with tunnel magnetoresistive effect read head element
US8289663B2 (en) * 2008-04-25 2012-10-16 Headway Technologies, Inc. Ultra low RA (resistance x area) sensors having a multilayer non-magnetic spacer between pinned and free layers
US8059374B2 (en) * 2009-01-14 2011-11-15 Headway Technologies, Inc. TMR device with novel free layer structure

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001345497A (ja) * 2000-06-01 2001-12-14 Canon Inc 強磁性スピントンネル効果素子
JP2002319722A (ja) * 2001-01-22 2002-10-31 Matsushita Electric Ind Co Ltd 磁気抵抗効果素子とその製造方法
JP2007305610A (ja) * 2006-05-08 2007-11-22 Tohoku Univ トンネル磁気抵抗素子、不揮発性磁気メモリ、発光素子および３端子素子

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015012355A (ja) * 2013-06-27 2015-01-19 Ｊｆｅスチール株式会社 移動式ラインカメラの光学系画像補正方法

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