JP2009186457A5 - - Google Patents

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Publication number
JP2009186457A5
JP2009186457A5 JP2008284425A JP2008284425A JP2009186457A5 JP 2009186457 A5 JP2009186457 A5 JP 2009186457A5 JP 2008284425 A JP2008284425 A JP 2008284425A JP 2008284425 A JP2008284425 A JP 2008284425A JP 2009186457 A5 JP2009186457 A5 JP 2009186457A5
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JP
Japan
Prior art keywords
voltage
diode
current
wiring
setting circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2008284425A
Other languages
English (en)
Japanese (ja)
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JP5264418B2 (ja
JP2009186457A (ja
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Publication date
Application filed filed Critical
Priority to JP2008284425A priority Critical patent/JP5264418B2/ja
Priority claimed from JP2008284425A external-priority patent/JP5264418B2/ja
Priority to US12/346,126 priority patent/US8357900B2/en
Publication of JP2009186457A publication Critical patent/JP2009186457A/ja
Publication of JP2009186457A5 publication Critical patent/JP2009186457A5/ja
Application granted granted Critical
Publication of JP5264418B2 publication Critical patent/JP5264418B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2008284425A 2008-01-08 2008-11-05 熱型赤外線検出素子 Active JP5264418B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2008284425A JP5264418B2 (ja) 2008-01-08 2008-11-05 熱型赤外線検出素子
US12/346,126 US8357900B2 (en) 2008-01-08 2008-12-30 Thermal infrared detecting device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008001118 2008-01-08
JP2008001118 2008-01-08
JP2008284425A JP5264418B2 (ja) 2008-01-08 2008-11-05 熱型赤外線検出素子

Publications (3)

Publication Number Publication Date
JP2009186457A JP2009186457A (ja) 2009-08-20
JP2009186457A5 true JP2009186457A5 (https=) 2011-01-20
JP5264418B2 JP5264418B2 (ja) 2013-08-14

Family

ID=41069831

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008284425A Active JP5264418B2 (ja) 2008-01-08 2008-11-05 熱型赤外線検出素子

Country Status (1)

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JP (1) JP5264418B2 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5747498B2 (ja) * 2010-01-06 2015-07-15 セイコーエプソン株式会社 センサーデバイス及び電子機器
US8803063B2 (en) * 2010-02-19 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Photodetector circuit
EP3447461B1 (en) * 2016-04-19 2020-04-01 Mitsubishi Electric Corporation Infrared imaging element and infrared camera
WO2018235817A1 (ja) * 2017-06-23 2018-12-27 パイオニア株式会社 電磁波検出装置
WO2018235819A1 (ja) * 2017-06-23 2018-12-27 パイオニア株式会社 電磁波検出装置
CN115053113B (zh) * 2020-02-10 2025-09-09 三菱电机株式会社 红外线检测元件

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3583704B2 (ja) * 2000-01-12 2004-11-04 独立行政法人 科学技術振興機構 温度測定装置、熱型赤外線イメージセンサ及び温度測定方法
JP2004233314A (ja) * 2003-02-03 2004-08-19 Mitsubishi Electric Corp 熱型赤外線固体撮像素子
JP2009265000A (ja) * 2008-04-28 2009-11-12 Mitsubishi Electric Corp 熱型赤外線検出素子

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