JP2009182223A5 - - Google Patents

Download PDF

Info

Publication number
JP2009182223A5
JP2009182223A5 JP2008021202A JP2008021202A JP2009182223A5 JP 2009182223 A5 JP2009182223 A5 JP 2009182223A5 JP 2008021202 A JP2008021202 A JP 2008021202A JP 2008021202 A JP2008021202 A JP 2008021202A JP 2009182223 A5 JP2009182223 A5 JP 2009182223A5
Authority
JP
Japan
Prior art keywords
imaging device
state imaging
photodiodes
metal
predetermined voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2008021202A
Other languages
Japanese (ja)
Other versions
JP4599417B2 (en
JP2009182223A (en
Filing date
Publication date
Application filed filed Critical
Priority to JP2008021202A priority Critical patent/JP4599417B2/en
Priority claimed from JP2008021202A external-priority patent/JP4599417B2/en
Publication of JP2009182223A publication Critical patent/JP2009182223A/en
Publication of JP2009182223A5 publication Critical patent/JP2009182223A5/ja
Application granted granted Critical
Publication of JP4599417B2 publication Critical patent/JP4599417B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Claims (3)

半導体基板の第１面（以下、表面という。）側に二次元アレイ状に複数のフォトダイオードが形成され、該半導体基板の第２面（以下、裏面という。）側から入射した光によって発生した信号電荷を前記フォトダイオードの各々が検出する裏面照射型固体撮像素子において、前記フォトダイオードの各々を隣接する前記フォトダイオードから分離するトレンチ構造の溝を持つ素子分離領域が前記裏面側に形成され、前記溝の中に光を遮断する金属が充填され、前記金属に外部から所定電圧を印加する配線が接続されていることを特徴とする裏面照射型固体撮像素子。 A plurality of photodiodes are formed in a two-dimensional array on the first surface (hereinafter referred to as the front surface) side of the semiconductor substrate, and generated by light incident from the second surface (hereinafter referred to as the back surface) side of the semiconductor substrate. In the back-illuminated solid-state imaging device in which each of the photodiodes detects a signal charge, an element isolation region having a trench structure groove that separates each of the photodiodes from the adjacent photodiode is formed on the back surface side , A back-illuminated solid-state imaging device, wherein the groove is filled with a metal that blocks light, and a wiring for applying a predetermined voltage from the outside is connected to the metal . 前記所定電圧が電子シャッタ時に印加されたとき前記フォトダイオードの蓄積電荷が前素子分離領域の前記金属を通して廃棄されることを特徴とする請求項１に記載の裏面照射型固体撮像素子。 2. The backside illumination type solid-state imaging device according to claim 1 , wherein when the predetermined voltage is applied during electronic shutter, the accumulated charge of the photodiode is discarded through the metal in the front element isolation region. 前記所定電圧は、前記溝の内周面電位を安定化させ暗電流発生を抑制する電圧であることを特徴とする請求項１に記載の裏面照射型固体撮像素子。 The backside illuminated solid-state imaging device according to claim 1 , wherein the predetermined voltage is a voltage that stabilizes an inner peripheral surface potential of the groove and suppresses dark current generation.
JP2008021202A 2008-01-31 2008-01-31 Back-illuminated solid-state image sensor Expired - Fee Related JP4599417B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008021202A JP4599417B2 (en) 2008-01-31 2008-01-31 Back-illuminated solid-state image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008021202A JP4599417B2 (en) 2008-01-31 2008-01-31 Back-illuminated solid-state image sensor

Publications (3)

Publication Number Publication Date
JP2009182223A JP2009182223A (en) 2009-08-13
JP2009182223A5 true JP2009182223A5 (en) 2010-08-05
JP4599417B2 JP4599417B2 (en) 2010-12-15

Family

ID=41035938

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008021202A Expired - Fee Related JP4599417B2 (en) 2008-01-31 2008-01-31 Back-illuminated solid-state image sensor

Country Status (1)

Country Link
JP (1) JP4599417B2 (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009206356A (en) 2008-02-28 2009-09-10 Toshiba Corp Solid-state imaging device and manufacturing method thereof
JP5509846B2 (en) * 2009-12-28 2014-06-04 ソニー株式会社 SOLID-STATE IMAGING DEVICE, ITS MANUFACTURING METHOD, AND ELECTRONIC DEVICE
US9357956B2 (en) 2010-03-05 2016-06-07 Seiko Epson Corporation Spectroscopic sensor and electronic apparatus
JP2011199037A (en) * 2010-03-19 2011-10-06 Toshiba Corp Solid-state imaging apparatus and method of manufacturing the same
JP5663925B2 (en) 2010-03-31 2015-02-04 ソニー株式会社 Solid-state imaging device, manufacturing method thereof, and electronic apparatus
JP5536517B2 (en) * 2010-04-14 2014-07-02 浜松ホトニクス株式会社 Solid-state imaging device
JP2012023207A (en) * 2010-07-14 2012-02-02 Toshiba Corp Backside-illuminated solid-state imaging device
JP6299058B2 (en) 2011-03-02 2018-03-28 ソニー株式会社 Solid-state imaging device, method for manufacturing solid-state imaging device, and electronic apparatus
CN104205332B (en) 2012-03-30 2016-05-18 富士胶片株式会社 Imaging apparatus and camera head
TW201405792A (en) 2012-07-30 2014-02-01 Sony Corp Solid-state imaging device, method of manufacturing solid-state imaging device and electronic apparatus
JP5547260B2 (en) * 2012-10-22 2014-07-09 株式会社東芝 Solid-state imaging device
FR2997596B1 (en) * 2012-10-26 2015-12-04 New Imaging Technologies Sas STRUCTURE OF A CMOS ACTIVE PIXEL
JP6278608B2 (en) 2013-04-08 2018-02-14 キヤノン株式会社 Semiconductor device and manufacturing method thereof
US9191637B2 (en) 2013-09-10 2015-11-17 Kabushiki Kaisha Toshiba Solid-state imaging apparatus
JP2016100347A (en) 2014-11-18 2016-05-30 ソニー株式会社 Solid-state imaging device, method of manufacturing the same, and electronic apparatus
JP5862753B2 (en) * 2014-12-11 2016-02-16 セイコーエプソン株式会社 Spectroscopic sensor device and electronic device
JP6052353B2 (en) * 2015-07-31 2016-12-27 ソニー株式会社 Solid-state imaging device, manufacturing method, and electronic apparatus

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02278767A (en) * 1989-04-19 1990-11-15 Sony Corp Solid-state image sensing device
JPH0778959A (en) * 1993-09-09 1995-03-20 Sony Corp Solid state image sensor
JP2005150521A (en) * 2003-11-18 2005-06-09 Canon Inc Imaging apparatus and manufacturing method thereof
JP2007096271A (en) * 2005-09-05 2007-04-12 Toshiba Corp Solid state imaging device and its manufacturing method
JP4384198B2 (en) * 2007-04-03 2009-12-16 シャープ株式会社 Solid-state imaging device, manufacturing method thereof, and electronic information device

Similar Documents

Publication Publication Date Title
JP2009182223A5 (en)
JP2009065098A5 (en)
JP2006197383A5 (en)
KR102221993B1 (en) Solid-state image pickup apparatus, method for manufacturing same, and electronic apparatus
JP2010226143A5 (en)
JP2012191005A5 (en)
KR102066603B1 (en) Image sensor having the 3d photoelectric conversion device
TW200633199A (en) Solid-state imaging device
JP2009176777A5 (en)
JP2009236914A (en) Distance measurement sensor and 3d color image sensor provided with the same
KR20150071768A (en) Image sensor and method for fabricating the same
JP2012019057A5 (en)
JP2006344916A5 (en)
JP2012204354A5 (en)
JP2009164385A5 (en)
JP2010098219A (en) Backside-illuminated solid-state image pickup device
JP2011129785A5 (en)
JP2007294486A5 (en)
JP2014225536A (en) Solid-state imaging device and camera
TW200830543A (en) Solid-state imaging device and electronic device
JP2008210846A5 (en)
WO2015079944A1 (en) Solid-state image capturing element, manufacturing method therefor, and electronic device
TW201523850A (en) Solid-state imaging device
KR20170083783A (en) Image sensor
JP2007088450A5 (en)