JP2008210846A5 - - Google Patents

Claims (15)

A plurality of photoelectric conversion elements formed in a two-dimensional array for receiving light incident from the back side of the semiconductor substrate on the front side of the semiconductor substrate, and detected by the photoelectric conversion elements formed on the front side of the semiconductor substrate A signal reading means for reading out the read signal to the outside, a microlens composed of an inner lens and a top lens provided in correspondence with the photoelectric conversion element on the back side of the semiconductor substrate, and a light shielding member provided between the adjacent inner lenses When manufacturing a back-illuminated solid-state imaging device comprising: a back surface that is manufactured by bonding a support substrate on which a wiring electrically connected to the signal reading means is formed in advance to the front surface side of the semiconductor substrate Manufacturing method of irradiation type solid-state imaging device.   The method for manufacturing a backside illumination type solid-state imaging device according to claim 1, wherein the wafer-like support substrate is bonded to the front surface side of the wafer-like semiconductor substrate. The photoelectric conversion element and the signal readout hand stage semiconductor substrate which is formed via the insulating layer on the base substrate is formed, wherein said base substrate after the supporting substrate is bonded, characterized in that the removed The manufacturing method of the back irradiation type solid-state image sensor of Claim 1 or Claim 2.   4. The method for manufacturing a backside illumination type solid-state imaging device according to claim 3, wherein a transparent substrate is bonded to the backside of the wafer-like semiconductor substrate after the base substrate is removed.   5. The backside illumination type according to claim 4, wherein after the bonding, each backside illumination type solid-state imaging device in the wafer is cut together with the support substrate and the transparent substrate to be separated into pieces. Manufacturing method of solid-state image sensor.   The method for manufacturing a backside illumination type solid-state imaging device according to claim 1, wherein the wiring includes a wiring penetrating the support substrate.   7. The signal processing circuit for processing a signal read by the signal reading unit is formed in advance on the supporting substrate before the bonding. A method for manufacturing a back-illuminated solid-state imaging device.   The method of manufacturing a backside illumination type solid-state imaging device according to claim 7, wherein the backside illumination type solid-state imaging device is a CCD type, and the signal processing circuit is an AFE circuit.   The CCD-type back-illuminated solid-state imaging device has an output charge transfer path divided into a plurality of parts, and a plurality of the AFE circuits corresponding to the divided output charge transfer paths are formed on the support substrate. 9. The backside illuminated solid-state imaging device according to claim 8, wherein each AFE circuit formed and the divided output signal of the output charge transfer path are electrically connected via the wiring. Manufacturing method. The refractive index of the material forming the microlens to claims 1 to 9 characterized by high refractive der Rukoto than the refractive index of the transparent adhesive material paste said transparent substrate onto said microlens The manufacturing method of the back irradiation type solid-state image sensor of description. Said having a refractive index of the material forming the microlens of 1.5 or more, the back-illuminated solid-state imaging device according to claim 10, the refractive index of the adhesive material, characterized in der Rukoto 1.4 Production method. A back-illuminated solid-state imaging device manufactured by the manufacturing method according to claim 1. A plurality of photoelectric conversion elements formed in a two-dimensional array for receiving light incident from the back side of the semiconductor substrate on the front side of the semiconductor substrate, and detected by the photoelectric conversion elements formed on the front side of the semiconductor substrate A signal reading means for reading out the read signal to the outside, a microlens composed of an inner lens and a top lens provided on the back side of the semiconductor substrate corresponding to the photoelectric conversion element, and a light shielding member provided between the adjacent inner lenses A back-illuminated solid-state imaging device. The backside illumination type solid-state imaging device according to claim 13, wherein a refractive index of a material of the inner lens is 1.8 or more . The backside illuminated solid-state imaging device according to claim 13 or 14, wherein a color filter is provided between the inner lens and the top lens .