JP2009164543A - 光センサ及び表示装置 - Google Patents

光センサ及び表示装置 Download PDF

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Publication number
JP2009164543A
JP2009164543A JP2008052811A JP2008052811A JP2009164543A JP 2009164543 A JP2009164543 A JP 2009164543A JP 2008052811 A JP2008052811 A JP 2008052811A JP 2008052811 A JP2008052811 A JP 2008052811A JP 2009164543 A JP2009164543 A JP 2009164543A
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JP
Japan
Prior art keywords
control electrode
photoactive layer
region
electrode
optical sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008052811A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009164543A5 (zh
Inventor
Natsuki Otani
夏樹 大谷
Tsutomu Tanaka
田中　　勉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2008052811A priority Critical patent/JP2009164543A/ja
Priority to TW097143948A priority patent/TWI425627B/zh
Priority to US12/324,520 priority patent/US8426937B2/en
Priority to KR1020080124739A priority patent/KR20090061589A/ko
Priority to CN200810184652XA priority patent/CN101458430B/zh
Publication of JP2009164543A publication Critical patent/JP2009164543A/ja
Publication of JP2009164543A5 publication Critical patent/JP2009164543A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Thin Film Transistor (AREA)
JP2008052811A 2007-12-11 2008-03-04 光センサ及び表示装置 Pending JP2009164543A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2008052811A JP2009164543A (ja) 2007-12-11 2008-03-04 光センサ及び表示装置
TW097143948A TWI425627B (zh) 2007-12-11 2008-11-13 光感測器和顯示器
US12/324,520 US8426937B2 (en) 2007-12-11 2008-11-26 Light sensor and display
KR1020080124739A KR20090061589A (ko) 2007-12-11 2008-12-09 광센서 및 표시장치
CN200810184652XA CN101458430B (zh) 2007-12-11 2008-12-11 光传感器和显示器

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007319141 2007-12-11
JP2008052811A JP2009164543A (ja) 2007-12-11 2008-03-04 光センサ及び表示装置

Publications (2)

Publication Number Publication Date
JP2009164543A true JP2009164543A (ja) 2009-07-23
JP2009164543A5 JP2009164543A5 (zh) 2011-03-03

Family

ID=40769384

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008052811A Pending JP2009164543A (ja) 2007-12-11 2008-03-04 光センサ及び表示装置

Country Status (4)

Country Link
JP (1) JP2009164543A (zh)
KR (1) KR20090061589A (zh)
CN (1) CN101458430B (zh)
TW (1) TWI425627B (zh)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07202250A (ja) * 1993-12-31 1995-08-04 Casio Comput Co Ltd 光電変換装置
JPH09260630A (ja) * 1996-03-26 1997-10-03 Sony Corp 固体撮像素子及びその製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EA003343B1 (ru) * 1999-08-02 2003-04-24 Касио Компьютер Ко., Лтд. Фотодатчик и система фотодатчиков
US6933532B2 (en) * 2003-03-28 2005-08-23 Eastman Kodak Company OLED display with photosensor
CN100369270C (zh) * 2003-12-24 2008-02-13 三洋电机株式会社 光传感器及显示装置
JP2005208582A (ja) * 2003-12-24 2005-08-04 Sanyo Electric Co Ltd 光センサおよびディスプレイ
JP2005250454A (ja) * 2004-02-06 2005-09-15 Sanyo Electric Co Ltd 光センサ付きディスプレイおよびその製造方法
KR101097920B1 (ko) * 2004-12-10 2011-12-23 삼성전자주식회사 광 센서와, 이를 구비한 표시 패널 및 표시 장치
JP2006186266A (ja) * 2004-12-28 2006-07-13 Toshiba Matsushita Display Technology Co Ltd 光電変換素子及びこれを用いた表示装置
TWI291237B (en) * 2005-10-07 2007-12-11 Integrated Digital Technologie Photo detector array
JP2007214398A (ja) * 2006-02-10 2007-08-23 Nec Corp 半導体集積回路

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07202250A (ja) * 1993-12-31 1995-08-04 Casio Comput Co Ltd 光電変換装置
JPH09260630A (ja) * 1996-03-26 1997-10-03 Sony Corp 固体撮像素子及びその製造方法

Also Published As

Publication number Publication date
TW200931653A (en) 2009-07-16
TWI425627B (zh) 2014-02-01
KR20090061589A (ko) 2009-06-16
CN101458430A (zh) 2009-06-17
CN101458430B (zh) 2013-05-22

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