JP2009111333A5 - - Google Patents

Claims (11)

A semiconductor substrate;
An insulating film formed on the semiconductor substrate;
Signal wiring and dummy wiring formed in the insulating film;
A plurality of external terminals formed on the insulating film,
Assuming a region between the end of the semiconductor substrate on the line connecting the centers of the adjacent external terminals in a plane parallel to the semiconductor substrate plane as a signal wiring prohibited region,
The semiconductor device according to claim 1, wherein the signal wiring and the dummy wiring are arranged in the signal wiring prohibited area . The signal wiring and the dummy wiring are in the signal wiring prohibited area,
A perpendicular line is drawn from the end of the semiconductor substrate to the center of the external terminal in a plane parallel to the semiconductor substrate plane, and a range having a fan angle of 140 ° from the center of the external terminal around the perpendicular, and the external It said about the center of the terminal external terminal to end the shortest of the longest length 5 minutes 4 the radius of the the arc up to the external terminal ends around the center of the external terminals of the length of 5 minutes 6 The semiconductor device according to claim 1, wherein the semiconductor device is formed in a region overlapping with a range surrounded by an arc having a radius of. 3. The semiconductor device according to claim 1, wherein the dummy wiring opens a gap of 2 μm or more from the signal wiring and continuously surrounds the periphery of the signal wiring. 4. . 3. The one or more dummy wirings according to claim 1, wherein one or a plurality of the dummy wirings are arranged in parallel with the signal wiring with a gap larger than the width of the signal wiring. semiconductor device. 3. The dummy wiring according to claim 1, wherein one or a plurality of the dummy wirings are arranged in parallel to the signal wiring with a gap of 2 μm or more between the dummy wirings . 4. Semiconductor device. 6. The semiconductor device according to claim 1, wherein a line width of the signal wiring is set to be not less than five times a thickness of the signal wiring . The semiconductor device according to claim 1, wherein a line width of the signal wiring is 10 μm or more . The semiconductor device according to claim 1, wherein the external terminal is a bump having a circular shape . The semiconductor device according to claim 8 , further comprising a post under the bump . The semiconductor device according to claim 8, further comprising an under bump metal film under the bump . 11. The semiconductor device according to claim 1, wherein the signal wiring and the dummy wiring are made of a material containing Al and have a thickness of 1.5 μm or more .