JP2012212712A5 - - Google Patents

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Publication number
JP2012212712A5
JP2012212712A5 JP2011076410A JP2011076410A JP2012212712A5 JP 2012212712 A5 JP2012212712 A5 JP 2012212712A5 JP 2011076410 A JP2011076410 A JP 2011076410A JP 2011076410 A JP2011076410 A JP 2011076410A JP 2012212712 A5 JP2012212712 A5 JP 2012212712A5
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JP
Japan
Prior art keywords
semiconductor device
bonding
bonding material
material provided
pad portions
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JP2011076410A
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Japanese (ja)
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JP2012212712A (en
JP6043049B2 (en
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Priority to JP2011076410A priority Critical patent/JP6043049B2/en
Priority claimed from JP2011076410A external-priority patent/JP6043049B2/en
Publication of JP2012212712A publication Critical patent/JP2012212712A/en
Publication of JP2012212712A5 publication Critical patent/JP2012212712A5/ja
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Claims (7)

基材上の一部に形成されている配線層と、前記配線層の一部である複数のパッド部を囲むように形成されているレジスト層と、を有する配線基板と、
前記複数のパッド部の一方の上に電気的に接続するように設けられている半導体装置と、
前記複数のパッド部の他方の上に設けられている接合材と、
前記半導体装置の上に設けられている接合材と、
前記複数のパッド部の他方の上に設けられている接合材と、前記半導体装置の上に設けられている接合材と、に接するように設けられている接続部材と、
を有し、
前記接続部材は、前記複数のパッド部の他方の上に設けられている接合材と接する第１の接合部材と、
前記半導体装置の上に設けられている接合材と接する第２の接合部材と、
前記第１の接合部材と前記第２の接合部材と一定の間隔を設けて形成されている第１の部材と、
前記第１の部材を支持し、前記第１の接合部材と接続している第２の部材と、
前記第１の部材を支持し、前記第２の接合部材と接続している第３の部材と、
を有することを特徴とする半導体装置の実装構造。 A wiring board having a wiring layer formed on a part of the substrate , and a resist layer formed so as to surround a plurality of pad portions that are a part of the wiring layer;
A semiconductor device provided to be electrically connected to one of the plurality of pad portions ;
A bonding material provided on the other of the plurality of pad portions ;
A bonding material provided on the semiconductor device ;
A connecting member provided to be in contact with a bonding material provided on the other of the plurality of pad portions and a bonding material provided on the semiconductor device;
I have a,
The connection member includes a first bonding member that contacts a bonding material provided on the other of the plurality of pad portions;
A second bonding member in contact with a bonding material provided on the semiconductor device;
A first member formed at a certain interval from the first joining member and the second joining member;
A second member supporting the first member and connected to the first joining member;
A third member supporting the first member and connected to the second joining member;
A mounting structure of a semiconductor device, comprising: 前記接続部材は、板状であることを特徴とする請求項１に記載の半導体装置の実装構造。 Mounting structure of the connecting member, a semiconductor device according to claim 1, wherein the plate-shaped der Rukoto. 前記第３の部材の長さは、前記第１の接合部材と前記第２の接合部材の厚みの合計よりも長いことを特徴とする請求項１又は請求項２に記載の半導体装置の実装構造。 3. The semiconductor device mounting structure according to claim 1 , wherein a length of the third member is longer than a total thickness of the first bonding member and the second bonding member. . 前記第１の部材は前記基材と略平行となるように設けられていることを特徴とする請求項１乃至請求項３に記載の半導体装置の実装構造。 Mounting structure of a semiconductor device according to claim 1 to claim 3 wherein the first member is characterized that you have provided so as to be substantially parallel to the substrate. 前記第２の部材の長さと前記第３の部材の長さは異なることを特徴とする請求項１乃至請求項４に記載の半導体装置の実装構造。 Mounting structure of a semiconductor device according to claim 1 to claim 4, characterized in Rukoto different from the length of the second member of the length and the third member. 基材上の一部に形成されている配線層と、前記配線層の一部である複数のパッド部を囲むように形成されているレジスト層と、を有する配線基板と、前記複数のパッド部の一方の上に電気的に接続するように半導体装置を設ける工程と、
前記複数のパッド部の他方の上と、前記半導体装置の上に接合材を設ける工程と、
前記複数のパッド部の他方の上に設けられている接合材と、前記半導体装置の上に設けられている接合材と、に接するように接続部材を設ける工程と、
を有し、
前記接続部材は、前記複数のパッド部の他方の上に設けられている接合材と接する第１の接合部材と、前記半導体装置の上に設けられている接合材と接する第２の接合部材と、前記第１の接合部材と前記第２の接合部材と一定の間隔を設けて形成されている第１の部材と、前記第１の部材を支持し、前記第１の接合部材と接続している第２の部材と、前記第１の部材を支持し、前記第２の接合部材と接続している第３の部材を含むことを特徴とする半導体装置の実装方法。 A wiring board having a wiring layer formed on a part of a substrate, and a resist layer formed so as to surround a plurality of pad parts that are a part of the wiring layer, and the plurality of pad parts Providing a semiconductor device so as to be electrically connected on one of
Providing a bonding material on the other of the plurality of pad portions and on the semiconductor device ;
Providing a connecting member so as to contact the bonding material provided on the other of the plurality of pad portions and the bonding material provided on the semiconductor device ;
I have a,
The connection member includes a first bonding member that contacts a bonding material provided on the other of the plurality of pad portions, and a second bonding member that contacts a bonding material provided on the semiconductor device. A first member formed at a predetermined interval from the first joining member and the second joining member, and the first member is supported and connected to the first joining member. A semiconductor device mounting method comprising: a second member, and a third member that supports the first member and is connected to the second bonding member . 前記第１の部材は前記基材と略平行となるように設けることを特徴とする請求項６に記載の半導体装置の実装方法。 The method for mounting a semiconductor device according to claim 6, wherein the first member is provided so as to be substantially parallel to the base material .
JP2011076410A 2011-03-30 2011-03-30 Semiconductor device mounting structure and semiconductor device mounting method Active JP6043049B2 (en)

Priority Applications (1)

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JP2011076410A JP6043049B2 (en) 2011-03-30 2011-03-30 Semiconductor device mounting structure and semiconductor device mounting method

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Application Number Priority Date Filing Date Title
JP2011076410A JP6043049B2 (en) 2011-03-30 2011-03-30 Semiconductor device mounting structure and semiconductor device mounting method

Publications (3)

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JP2012212712A JP2012212712A (en) 2012-11-01
JP2012212712A5 true JP2012212712A5 (en) 2014-04-24
JP6043049B2 JP6043049B2 (en) 2016-12-14

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Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013179638A1 (en) * 2012-05-29 2013-12-05 日本精工株式会社 Semiconductor module and production method for same
EP2916348B1 (en) * 2012-11-05 2020-05-13 NSK Ltd. Semiconductor module
CN103930981B (en) * 2012-11-05 2016-07-13 日本精工株式会社 Semiconductor module
EP2916353B1 (en) 2012-11-05 2017-07-26 NSK Ltd. Semiconductor module
EP3024024B1 (en) * 2013-10-21 2020-03-18 NSK Ltd. Semiconductor module
JP6566634B2 (en) * 2014-12-09 2019-08-28 国立大学法人大阪大学 Junction structure and manufacturing method of junction structure

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* Cited by examiner, † Cited by third party
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JP4550503B2 (en) * 2004-07-22 2010-09-22 ルネサスエレクトロニクス株式会社 Semiconductor device
JP2006344652A (en) * 2005-06-07 2006-12-21 Toshiba Components Co Ltd Semiconductor device and method of mounting semiconductor component
JP5076440B2 (en) * 2006-10-16 2012-11-21 富士電機株式会社 Semiconductor device and manufacturing method of semiconductor device
JP2010050364A (en) * 2008-08-25 2010-03-04 Hitachi Ltd Semiconductor device
JP5388661B2 (en) * 2009-04-03 2014-01-15 三菱電機株式会社 Semiconductor device and manufacturing method thereof
JP2012212713A (en) * 2011-03-30 2012-11-01 Toshiba Corp Mounting structure of semiconductor device
JP2012217213A (en) * 2012-08-01 2012-11-08 Toshiba Corp Image processing device and image processing method

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