JP2008211188A5 - - Google Patents

Claims (10)

A first semiconductor element;
A second semiconductor element stacked on the first semiconductor element and having a protruding portion protruding from an outer edge of the first semiconductor element;
With
The second semiconductor element has a first circuit region and a second circuit region that easily generates heat at a temperature higher than that of the first circuit region, and the second circuit region includes the protruding portion. A semiconductor device characterized in that the semiconductor device is disposed. The first semiconductor element and the second semiconductor element are disposed on a substrate and sealed with a resin layer formed on the substrate,
The resin layer has an interval between the end portion including the second circuit region of the second semiconductor element and a corresponding side wall surface of the resin layer shorter than an interval at the other end portion. The semiconductor device according to claim 1, wherein the semiconductor device is formed.   The amount of current flowing through the first wiring connecting the electrode portion included in the first circuit region and the terminal provided on the substrate is provided on the electrode portion and substrate included in the second circuit region. 3. The semiconductor device according to claim 2, wherein the amount of current is smaller than the amount of current flowing through the second wiring connecting to the terminal.   The terminal of the board to which the second wiring is connected is provided in a region different from the region between the end including the second circuit region and the corresponding side wall surface of the resin layer. The semiconductor device according to claim 3.   The resin layer is formed such that an interval between the end portion and a side wall surface of the resin layer corresponding to the end portion is shorter than an interval between the upper surface of the second semiconductor element and the upper surface of the resin layer. The semiconductor device according to claim 2, wherein the semiconductor device is provided. The second semiconductor element is stacked on the first semiconductor element such that a plurality of sides of the second semiconductor element protrude from an outer edge of the first semiconductor element. The semiconductor device according to any one of 1 to 5.   2. The second semiconductor element is stacked on the first semiconductor element such that four sides of the second semiconductor element protrude from an outer edge of the first semiconductor element. The semiconductor device according to any one of 1 to 5.   The plurality of protruding electrode terminals connected to the substrate are formed on a surface of the first semiconductor element opposite to a side where the second semiconductor element is stacked. 8. A semiconductor device according to any one of 1 to 7. The second circuit region includes an electrode portion;
The semiconductor device according to claim 1, wherein the electrode portion is disposed in a region where the first semiconductor element and the second semiconductor element overlap each other. The second circuit region includes an electrode portion;
The semiconductor device according to claim 1, wherein the electrode portion is disposed on the protruding portion.