JP2009110616A5 - - Google Patents

Download PDF

Info

Publication number
JP2009110616A5
JP2009110616A5 JP2007283462A JP2007283462A JP2009110616A5 JP 2009110616 A5 JP2009110616 A5 JP 2009110616A5 JP 2007283462 A JP2007283462 A JP 2007283462A JP 2007283462 A JP2007283462 A JP 2007283462A JP 2009110616 A5 JP2009110616 A5 JP 2009110616A5
Authority
JP
Japan
Prior art keywords
search
line
data
memory device
memory cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007283462A
Other languages
English (en)
Japanese (ja)
Other versions
JP5064171B2 (ja
JP2009110616A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2007283462A priority Critical patent/JP5064171B2/ja
Priority claimed from JP2007283462A external-priority patent/JP5064171B2/ja
Priority to US12/261,598 priority patent/US8169807B2/en
Publication of JP2009110616A publication Critical patent/JP2009110616A/ja
Publication of JP2009110616A5 publication Critical patent/JP2009110616A5/ja
Application granted granted Critical
Publication of JP5064171B2 publication Critical patent/JP5064171B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2007283462A 2007-10-31 2007-10-31 連想記憶装置 Active JP5064171B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007283462A JP5064171B2 (ja) 2007-10-31 2007-10-31 連想記憶装置
US12/261,598 US8169807B2 (en) 2007-10-31 2008-10-30 Content addressable memory device having match line equalizer circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007283462A JP5064171B2 (ja) 2007-10-31 2007-10-31 連想記憶装置

Publications (3)

Publication Number Publication Date
JP2009110616A JP2009110616A (ja) 2009-05-21
JP2009110616A5 true JP2009110616A5 (https=) 2010-12-02
JP5064171B2 JP5064171B2 (ja) 2012-10-31

Family

ID=40584378

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007283462A Active JP5064171B2 (ja) 2007-10-31 2007-10-31 連想記憶装置

Country Status (2)

Country Link
US (1) US8169807B2 (https=)
JP (1) JP5064171B2 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140369103A1 (en) * 2013-06-14 2014-12-18 Mediatek Inc. Content addressable memory cells and ternary content addressable memory cells
US9275735B2 (en) * 2014-01-06 2016-03-01 International Business Machines Corporation Array organization and architecture to perform range-match operations with content addressable memory (CAM) circuits
JP2015225682A (ja) 2014-05-27 2015-12-14 ルネサスエレクトロニクス株式会社 半導体集積回路
US9536608B1 (en) 2015-11-17 2017-01-03 International Business Machines Corporation Content addressable memory device
JP6832799B2 (ja) * 2016-09-07 2021-02-24 ルネサスエレクトロニクス株式会社 半導体装置
US9728258B1 (en) * 2016-10-04 2017-08-08 National Tsing Hua University Ternary content addressable memory
US10714181B2 (en) * 2016-11-30 2020-07-14 Taiwan Semiconductor Manufacturing Co., Ltd. Memory cell
US10910056B2 (en) * 2018-02-22 2021-02-02 Renesas Electronics Corporation Semiconductor device

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4732596B2 (ja) * 2000-03-03 2011-07-27 川崎マイクロエレクトロニクス株式会社 連想メモリ装置
JP2002358791A (ja) 2001-05-30 2002-12-13 Fujitsu Ltd 連想記憶装置及びプリチャージ方法
JP2003132686A (ja) * 2001-10-19 2003-05-09 Kawasaki Microelectronics Kk 連想メモリ
JP2003242784A (ja) * 2002-02-15 2003-08-29 Kawasaki Microelectronics Kk 連想メモリ装置
US6704216B1 (en) * 2002-08-15 2004-03-09 Integrated Silicon Solution, Inc. Dual match-line, twin-cell, binary-ternary CAM
JP2004192695A (ja) * 2002-12-10 2004-07-08 Kawasaki Microelectronics Kk 連想メモリ装置
JP4149296B2 (ja) 2003-03-26 2008-09-10 株式会社ルネサステクノロジ 半導体記憶装置
JP4861012B2 (ja) 2005-03-31 2012-01-25 ルネサスエレクトロニクス株式会社 Ｃａｍ装置
JP2007317342A (ja) * 2006-04-25 2007-12-06 Renesas Technology Corp 内容参照メモリ

Similar Documents

Publication Publication Date Title
JP2009110616A5 (https=)
JP2014142989A5 (https=)
JP2014010885A5 (https=)
TW200620310A (en) Memory array with fast bit line precharge
JP2018073453A5 (ja) 記憶装置
GB2511248A (en) Enhanced data retention mode for dynamic memories
JP2016197484A5 (ja) 送信装置
JP2006085786A5 (https=)
JP2014135884A5 (https=)
JP2013525936A5 (https=)
US9196360B2 (en) Operating resistive memory cell
TW201612911A (en) Memory device
ATE479185T1 (de) Speicher mit selektiver vorladung
ATE523882T1 (de) Sram-speicherzelle auf basis von doppelgate- transistoren mit mittel zur erweiterung eines schreibbereichs
JP2015195075A5 (https=)
JP2009545834A5 (https=)
JP2013257545A5 (ja) 表示装置
JP2017021142A5 (https=)
JP2014006894A5 (https=)
TW200638422A (en) Magnetic random access memory device
US10319438B2 (en) Memory with margin current addition and related methods
AU2016320677A1 (en) Power gating devices and methods
TW201503131A (zh) 記憶體儲存電路及驅動記憶體儲存電路之方法
JP2017529644A5 (https=)
US9312006B2 (en) Non-volatile ternary content-addressable memory with resistive memory device