JP2009109768A - レジストパターン形成方法 - Google Patents

レジストパターン形成方法 Download PDF

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Publication number
JP2009109768A
JP2009109768A JP2007282375A JP2007282375A JP2009109768A JP 2009109768 A JP2009109768 A JP 2009109768A JP 2007282375 A JP2007282375 A JP 2007282375A JP 2007282375 A JP2007282375 A JP 2007282375A JP 2009109768 A JP2009109768 A JP 2009109768A
Authority
JP
Japan
Prior art keywords
film
resist pattern
acid
processed
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007282375A
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English (en)
Japanese (ja)
Other versions
JP2009109768A5 (enExample
Inventor
Yoshisuke Naka
義祐 中
Kotaro Sho
浩太郎 庄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2007282375A priority Critical patent/JP2009109768A/ja
Priority to US12/260,659 priority patent/US8084192B2/en
Publication of JP2009109768A publication Critical patent/JP2009109768A/ja
Publication of JP2009109768A5 publication Critical patent/JP2009109768A5/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2007282375A 2007-10-30 2007-10-30 レジストパターン形成方法 Pending JP2009109768A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007282375A JP2009109768A (ja) 2007-10-30 2007-10-30 レジストパターン形成方法
US12/260,659 US8084192B2 (en) 2007-10-30 2008-10-29 Method for forming resist pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007282375A JP2009109768A (ja) 2007-10-30 2007-10-30 レジストパターン形成方法

Publications (2)

Publication Number Publication Date
JP2009109768A true JP2009109768A (ja) 2009-05-21
JP2009109768A5 JP2009109768A5 (enExample) 2010-04-22

Family

ID=40778312

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007282375A Pending JP2009109768A (ja) 2007-10-30 2007-10-30 レジストパターン形成方法

Country Status (2)

Country Link
US (1) US8084192B2 (enExample)
JP (1) JP2009109768A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2022270411A1 (enExample) * 2021-06-24 2022-12-29

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220193828A1 (en) * 2020-12-23 2022-06-23 Amulaire Thermal Technology, Inc. Lift-off structure for sprayed thin layer on substrate surface and method for the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004199084A (ja) * 1996-09-13 2004-07-15 Toshiba Corp レジストパターン形成方法
JP2006053543A (ja) * 2004-07-15 2006-02-23 Shin Etsu Chem Co Ltd フォトレジスト下層膜形成材料及びパターン形成方法
JP2007017949A (ja) * 2005-06-07 2007-01-25 Shin Etsu Chem Co Ltd レジスト下層膜材料並びにそれを用いたパターン形成方法
JP2007171895A (ja) * 2005-11-28 2007-07-05 Shin Etsu Chem Co Ltd レジスト下層膜材料及びパターン形成方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5939236A (en) * 1997-02-07 1999-08-17 Shipley Company, L.L.C. Antireflective coating compositions comprising photoacid generators
JP4346358B2 (ja) 2003-06-20 2009-10-21 Ｎｅｃエレクトロニクス株式会社 化学増幅型レジスト組成物およびそれを用いた半導体装置の製造方法、パターン形成方法
US7416833B2 (en) * 2004-07-15 2008-08-26 Shin-Etsu Chemical Co., Ltd. Photoresist undercoat-forming material and patterning process
JP4718390B2 (ja) 2006-08-01 2011-07-06 信越化学工業株式会社 レジスト下層膜材料並びにそれを用いたレジスト下層膜基板およびパターン形成方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004199084A (ja) * 1996-09-13 2004-07-15 Toshiba Corp レジストパターン形成方法
JP2006053543A (ja) * 2004-07-15 2006-02-23 Shin Etsu Chem Co Ltd フォトレジスト下層膜形成材料及びパターン形成方法
JP2007017949A (ja) * 2005-06-07 2007-01-25 Shin Etsu Chem Co Ltd レジスト下層膜材料並びにそれを用いたパターン形成方法
JP2007171895A (ja) * 2005-11-28 2007-07-05 Shin Etsu Chem Co Ltd レジスト下層膜材料及びパターン形成方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2022270411A1 (enExample) * 2021-06-24 2022-12-29
KR20240026997A (ko) 2021-06-24 2024-02-29 도쿄엘렉트론가부시키가이샤 기판 처리 방법 및 기판 처리 시스템
JP7599562B2 (ja) 2021-06-24 2024-12-13 東京エレクトロン株式会社 基板処理方法及び基板処理システム

Also Published As

Publication number Publication date
US20090253082A1 (en) 2009-10-08
US8084192B2 (en) 2011-12-27

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