JP2009103864A - Liquid crystal device and electronic apparatus with the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a liquid crystal device capable of obtaining satisfactory transmittance by controlling occurrence of disclination, and to provide an electronic apparatus with the liquid crystal device. <P>SOLUTION: The liquid crystal device comprises: a gate wiring 46 formed on a first substrate 14; a data wiring 44 crossing the gate wiring 46 and defining a region of a rectangular pixel 40; a thin film transistor 42 connected to the gate wiring 46 and the data wiring 44; a common electrode 38 which has a plurality of slit-shaped aperture parts 50 and wherein a long axis direction or a short axis direction of the aperture part 50 and a region frame of the pixel 40 cross each other at the right angle; a pixel electrode 34 connected to the thin film transistor 42 and superposed on the common electrode 38; a second substrate 12 disposed opposite to the first substrate 14; and a liquid crystal layer 30 provided between the first substrate 14 and the second substrate 12, wherein, a liquid crystal panel is formed by the first substrate 14, the second substrate 12 and the liquid crystal layer 30, and the pixel electrode 34 and the common electrode 38 are inclined in a vertical direction or a horizontal direction of the liquid crystal panel. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a liquid crystal device and an electronic apparatus including the same.

  A fringe field switching mode liquid crystal display (FFS mode LCD) has been proposed in order to improve the low aperture ratio and transmittance of an in plane switching (IPS) mode LCD.

  FIG. 13 is a plan view showing a conventional FFS mode LCD. As shown in the drawing, the plurality of gate lines 130 and the data lines 132 are crossed on a first light-transmissive insulating substrate (not shown) so as to limit unit pixels. A thin film transistor 134 is provided at the intersection of the gate wiring 130 and the data wiring 132. The common electrode (not shown) is disposed in a plate shape in the pixel region defined by the gate wiring 130 and the data wiring 132 that are cross-arranged as described above.

  The pixel electrode 136 is disposed in the pixel region so as to be electrically insulated from the common electrode and in contact with the thin film transistor 134. The pixel electrode 136 is provided with a plurality of slits S1, S2, and S3. Here, the slits S1, S2, and S3 are a reference slit S1 that is arranged in parallel with the gate wiring 130 at the center of the long side of the pixel, and a plurality of upper slits that are arranged at a predetermined inclination above and below the reference slit S1. It is classified by S2 and lower slit S3.

  In order to apply a common signal to the common electrode, the common signal line 138 is arranged adjacent to the gate wiring 130 and in parallel with the gate wiring 130 at the edge of the pixel. The common signal line 138 is arranged so as to be in contact with a part of the common electrode and overlap with a part of the pixel electrode 136.

  Although not shown, a color filter substrate having predetermined elements including a black matrix and a color filter formed on a second light-transmissive insulating substrate is disposed at a predetermined distance from the array substrate having the structure described above, and A liquid crystal layer (not shown) including a plurality of positive or negative liquid crystal molecules is interposed between the first and second light-transmissive insulating substrates.

  Further, first and second horizontal alignment films are formed on the inner side surfaces of the array substrate and the color filter substrate, and first and second polarizing plates are provided on the outer side surfaces.

  Here, the first and second horizontal alignment films are rubbed in a direction parallel to the gate wiring 130 when a positive liquid crystal is applied, and in a direction parallel to the data wiring 132 when a negative liquid crystal is applied. The The first and second polarizing plates are installed perpendicular to each other so that their transmission axes operate in a normally black mode, and in particular one of them is parallel to the direction of the rubbing axis of the alignment film. Installed to have a transmission axis.

  In the FFS mode LCD having such a structure, when an electric field is formed between the common electrode and the pixel electrode 136, the distance between the array substrate and the color filter substrate is larger than the distance between the common electrode and the pixel electrode 136. A fringe field is formed between and above the two electrodes. Since this fringe field reaches the entire region including the upper part of the common electrode and the pixel electrode 136, not only the liquid crystal molecules arranged between the common electrode and the pixel electrode 136 but also the common electrode and the pixel electrode 136 when the device is driven. The liquid crystal molecules at the top also work.

  Therefore, in the FFS mode LCD, since the common electrode and the pixel electrode are both made of a light-transmitting conductive film, it has a high aperture ratio, and the liquid crystal molecules on the upper part of the electrode also operate. Have a rate. Furthermore, a symmetrical electric field in two directions is formed in one pixel region or between adjacent pixel regions, so that the refractive index anisotropy of liquid crystal molecules is compensated. As a result, color misregistration can be prevented (see, for example, Patent Document 1).

JP 2002-182230 A

  However, the FFS mode LCD has an advantage of having a high aperture ratio and a high transmittance and preventing color shift, but when the fringe field is formed between the common electrode and the pixel electrode, the angle of the rubbing axis is changed. When the angle is set to 30 degrees or 45 degrees, the edge portions of the slits S2 and S3 of the pixel electrode 136 become acute angles, so that the electric field in the slit exists in a plurality of directions, and some liquid crystals are in other liquid crystals. The display defect, called disclination, is located in the boundary area of the liquid crystal where the alignment directions are slightly different from each other. There are drawbacks.

  In the FFS mode LCD, the pixel electrodes 136 are provided with slits S1, S2, and S3. In this way, the slit width L or interval W of the pixel electrode 136 becomes sparse. For example, where the electrode width is large, the transmittance tends to decrease as in the IPS mode, and it is not easy to obtain a good LCD panel.

  SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.

  Application Example 1 A first substrate, a gate wiring formed on the first substrate, a data wiring defining a rectangular pixel region intersecting the gate wiring, the gate wiring, and the gate wiring A thin film transistor connected to a data line, and a plurality of slit-like openings corresponding to the pixel region, and an intersection angle between the major axis direction or the minor axis direction of the opening and the pixel region frame A common electrode having a right angle, a pixel electrode connected to the thin film transistor and overlapping the common electrode, a second substrate disposed to face the first substrate, and between the first substrate and the second substrate A liquid crystal panel, and a liquid crystal panel is formed by the first substrate, the second substrate, and the liquid crystal layer, and the pixel electrode and the common electrode are arranged in a vertical direction or a horizontal direction of the liquid crystal panel. Inclined against A liquid crystal device, characterized in that the.

  According to this, the pixel electrode and the common electrode in which the crossing angle between the major axis direction or the minor axis direction of the slit-like pattern and the pixel region frame (the frame of the region contributing to display as a pixel) is a right angle is used as the liquid crystal. By tilting the panel with respect to the vertical direction or the horizontal direction, the occurrence of disclination can be controlled and good transmittance can be obtained.

  Application Example 2 A first substrate, a gate wiring formed on the first substrate, a data wiring defining a rectangular pixel region intersecting the gate wiring, the gate wiring, and the gate wiring The thin film transistor connected to the data line, the common electrode formed corresponding to the pixel region, the thin film transistor connected to the thin film transistor and overlapping the common electrode, and having a plurality of slit-like openings, A pixel electrode whose crossing angle between the major axis direction or the minor axis direction of the pixel and a region frame of the pixel is a right angle, a second substrate disposed so as to face the first substrate, the first substrate, and the second substrate A liquid crystal layer provided between the substrate and the first substrate, the second substrate, and the liquid crystal layer to form a liquid crystal panel, and the pixel electrode and the common electrode are arranged above and below the liquid crystal panel. Direction or left-right direction Liquid crystal device is characterized in that is against tilting.

  According to this, the common electrode and the pixel electrode whose crossing angle between the major axis direction or the minor axis direction of the slit-like pattern and the pixel region frame is a right angle are inclined with respect to the vertical direction or the horizontal direction of the liquid crystal panel. It is possible to control the occurrence of disclination and obtain good transmittance.

  Application Example 3 In the liquid crystal device, the second substrate has a light-shielding film in a region facing a vertical and horizontal boundary region of the pixel electrode, and at least a part of the pixel electrode or the common electrode is provided in the liquid crystal device. A liquid crystal device characterized by being overlapped with a light shielding film.

  According to this, the occurrence of disclination can be minimized, the pixel area can be used more effectively than before, and the brightness of the liquid crystal panel can be improved.

  Application Example 4 In the above liquid crystal device, the pixel electrode and the common electrode are made of a light transmissive conductive film.

  According to this, the pixel area can be used more effectively than before, and the brightness of the liquid crystal panel can be improved.

  Application Example 5 In the liquid crystal device, the thin film transistor is provided outside the pixel region.

  According to this, the image display area can be effectively used up as a display by moving out the thin film transistor and the contact part, which are factors that lower the aperture ratio from the image display area.

  Application Example 6 Electronic equipment comprising the liquid crystal device according to any one of the above.

  According to this, it is possible to provide an electronic device that controls the occurrence of disclination and obtains good transmittance.

  This embodiment will be described below with reference to the drawings. In each of the drawings used for the description, the scale of each layer and each member is different in order to make each layer and each member recognizable on the drawing. Further, illustration of a color filter, an alignment film, and the like is omitted.

(overall structure)
FIGS. 1A and 1B are a plan view of the liquid crystal device 10 according to the present embodiment as viewed from the side of the counter substrate 12 together with the components formed thereon, and a sectional view taken along the line II of FIG. is there. More specifically, it is a plan view seen from the normal direction of the counter substrate 12. In this specification, viewing from the normal direction of the counter substrate 12 is also referred to as “plan view”.

  1A and 1B, a liquid crystal device 10 according to this embodiment is a transmissive active matrix liquid crystal device, and a seal portion 16 is opposed to an element substrate (first substrate) 14. It is provided along the edge of the substrate (second substrate) 12. In the element substrate 14, the data wiring drive circuit 18 and the mounting terminal 20 are provided along one side of the element substrate 14 in a region outside the seal portion 16, and 2 adjacent to the side where the mounting terminal 20 is arranged. A gate wiring drive circuit 22 is formed along the side. On the remaining one side of the element substrate 14, a plurality of wirings 26 are provided for connecting the gate wiring driving circuits 22 provided on both sides of the image display region 24, and the lower side of the frame 28 is used. In some cases, peripheral circuits such as a precharge circuit and an inspection circuit are provided. The counter substrate 12 has substantially the same contour as the seal portion 16, and the counter substrate 12 is fixed to the element substrate 14 by the seal portion 16. The liquid crystal layer 30 is held between the element substrate 14 and the counter substrate 12. A liquid crystal panel 32 is formed by the element substrate 14, the counter substrate 12, and the liquid crystal layer 30.

  As will be described in detail later, pixel electrodes 34 are formed in a matrix on the element substrate 14. On the other hand, a frame 28 made of a light-shielding material is formed in the inner region of the seal portion 16 on the counter substrate 12, and the inner side is an image display region 24. In the counter substrate 12, a light shielding film 36 called a black matrix or a black stripe may be formed in a region facing the vertical and horizontal boundary regions of the pixel electrode 34 of the element substrate 14.

  The liquid crystal device 10 of the present embodiment drives the liquid crystal layer 30 in the FFS mode. Therefore, the common electrode 38 is formed on the element substrate 14 in addition to the pixel electrode 34, and the counter substrate 12 is not formed with the counter electrode.

(Detailed configuration of the liquid crystal device 10)
With reference to FIG. 2, the structure of the liquid crystal device 10 according to the present embodiment and the element substrate 14 used therein will be described.
FIG. 2 is an equivalent circuit diagram showing an electrical configuration of the image display region 24 of the element substrate 14 used in the liquid crystal device 10 according to the present embodiment.

  As shown in FIG. 2, a plurality of rectangular pixels 40 are formed in a matrix in the image display area 24. Each of the plurality of pixels 40 is formed with a pixel electrode 34 and a pixel switching thin film transistor 42 for controlling the pixel electrode 34, and a data wiring 44 for supplying a data signal (image signal) in a line-sequential manner is a thin film transistor. 42 is electrically connected to the source. A gate wiring 46 is electrically connected to the gate of the thin film transistor 42, and a scanning signal is applied to the gate wiring 46 in a line sequential manner at a predetermined timing. The pixel electrode 34 is electrically connected to the drain of the thin film transistor 42, and the data signal supplied from the data wiring 44 is written to each pixel 40 at a predetermined timing by turning on the thin film transistor 42 for a certain period. . A pixel signal of a predetermined level written in the liquid crystal layer 30 shown in FIG. 1B through the pixel electrode 34 in this way is held for a certain period with the common electrode 38 formed on the element substrate 14. The Here, a storage capacitor 48 is formed between the pixel electrode 34 and the common electrode 38, and the voltage of the pixel electrode 34 is held for, for example, a time that is three orders of magnitude longer than the time when the source voltage is applied. The Thereby, the charge retention characteristic is improved, and the liquid crystal device 10 capable of performing display with a high contrast ratio can be realized.

  In FIG. 2, the common electrode 38 is shown as a wiring extending from the gate wiring driving circuit 22, but is formed on substantially the entire surface of the image display region 24 of the element substrate 14 and is held at a predetermined potential.

(Detailed configuration of each pixel 40)
3A and 3B are a cross-sectional view of one pixel 40 of the liquid crystal device 10 according to the present embodiment and a plan view of the pixels 40 adjacent to each other in the element substrate 14, respectively. ) Corresponds to a cross-sectional view when the liquid crystal device 10 is cut at a position corresponding to the line III-III in FIG. In FIG. 3B, the pixel electrode 34 is indicated by a long dotted line, the data wiring 44 and a thin film formed at the same time are indicated by a one-dot chain line, and the gate wiring 46 is indicated by a two-dot chain line. The removed parts are indicated by solid lines.

  As shown in FIGS. 3A and 3B, a plurality of light-transmissive pixel electrodes 34 (regions surrounded by long dotted lines) are formed on the element substrate 14 for each pixel 40 in a matrix. A data wiring 44 and a gate wiring 46 are formed along the vertical and horizontal boundary regions of the pixel electrode 34. The pixels 40 are arranged so as to be inclined with respect to the vertical direction or the horizontal direction of the liquid crystal panel 32 in plan view. Further, the pixel electrode 34 and the common electrode 38 are disposed so as to be inclined with respect to the vertical direction or the horizontal direction of the liquid crystal panel 32 in a plan view. That is, the pixel electrode 34 and the common electrode 38 are arranged in accordance with the rectangular shape of the pixel 40 with respect to the inclination of the pixel 40.

  Further, a common electrode 38 made of a light transmissive conductive film or the like (for example, an ITO (Indium Tin Oxide) film) is formed on substantially the entire surface of the image display region 24 (see FIG. 1A) of the element substrate 14. A plurality of slit-like openings 50 (shown by solid lines) are formed in the common electrode 38. In the present embodiment, the plurality of openings 50 extend in parallel with each other along the extending direction of the gate wiring 46. The end of the opening 50 is an angle along the region frame of the pixel 40 (the intersection angle between the end of the opening 50 and the region frame of the pixel 40 is 0 degree). Thereby, it is possible to prevent the disclination from entering the image display area 24. The common electrode 38 is arranged so that the intersection angle between the major axis direction or the minor axis direction of the opening 50 and the region frame of the pixel 40 is a right angle. The common electrode 38 is disposed so as to at least partially overlap the light shielding film 36. Thereby, it is possible to prevent the disclination from entering the image display area 24. Here, the area frame of the pixel 40 is a frame of an area that contributes to display as the pixel 40, and an area that does not contribute to the display operation in the pixel pitch is not a pixel area. In the configuration described above, the opening 50 may be formed in the pixel electrode 34 instead of the common electrode 38.

  The alignment film (not shown) of the element substrate 14 and the alignment film (not shown) of the counter substrate 12 are both a predetermined angle α (for example, a predetermined angle α) with the major axis direction or minor axis direction of the opening 50 in plan view. Is 5 degrees). The rubbing process is provided in a direction different from the vertical direction or the horizontal direction of the liquid crystal panel 32.

  In the image display region 24, a plurality of gate lines 46 and a plurality of data lines 44 are formed so as to intersect each other. The pixel 40 is provided corresponding to a rectangular region surrounded by the gate wiring 46 and the data wiring 44, and a pixel electrode 34 is formed for each pixel 40.

  3A includes a light-transmitting insulating substrate 14A such as a quartz substrate or a heat-resistant glass substrate, and the substrate of the counter substrate 12 includes a quartz substrate or a heat-resistant glass substrate. It consists of a light transmissive insulating substrate 12A. In this embodiment, a glass substrate is used for both of the light transmissive insulating substrates 12A and 14A.

  On the element substrate 14, a base protective film (not shown) made of a silicon oxide film or the like is formed on the surface of the light transmissive insulating substrate 14 A, and on the surface side thereof, at a position adjacent to each pixel electrode 34. A thin film transistor 42 having a top gate structure is formed. As shown in FIGS. 3A and 3B, the thin film transistor 42 has a structure in which a channel formation region 52B, a source region 52C, and a drain region 52D are formed on an island-shaped semiconductor film 52A. The channel formation region 52B may be formed to have an LDD (Lightly Doped Drain) structure having low concentration regions on both sides. In the present embodiment, the semiconductor film 52A is a polysilicon film that is polycrystallized by laser annealing, lamp annealing, or the like after an amorphous silicon film is formed on the element substrate.

  A gate insulating film 54 made of a silicon oxide film, a silicon nitride film, or a laminated film thereof is formed on the upper layer of the semiconductor film 52A, and a part of the gate wiring 46 serves as a gate electrode on the upper layer of the gate insulating film 54. overlapping. In the present embodiment, the semiconductor film 52A is bent in a U shape and has a twin gate structure in which gate electrodes are formed at two locations in the channel direction.

  An interlayer insulating film 56 made of a silicon oxide film, a silicon nitride film, or a laminated film thereof is formed on the gate electrode (gate wiring 46). A data wiring 44 is formed on the surface of the interlayer insulating film 56, and the data wiring 44 is electrically connected to a source region 52C located closest to the data wiring 44 via a contact hole 56A formed in the interlayer insulating film 56. Connected. A drain electrode 58 is formed on the surface of the interlayer insulating film 56, and the drain electrode 58 is a conductive film formed simultaneously with the data wiring 44. The drain electrode 58 is electrically connected to the drain region 52D through a contact hole 56B formed in the interlayer insulating film 56.

  An interlayer insulating film 60 is formed on the upper side of the data wiring 44 and the drain electrode 58. In the present embodiment, the interlayer insulating film 60 is formed as a planarizing film made of a thick photosensitive resin having a thickness of 1.5 to 3.0 μm.

  Pixel electrodes 34 made of an ITO film are formed in an island shape on the surface of the interlayer insulating film 60. The pixel electrode 34 is electrically connected to the drain electrode 58 through a contact hole 60 </ b> A formed in the interlayer insulating film 60, and the drain electrode 58 is a contact hole formed in the interlayer insulating film 56 and the gate insulating film 54. It is electrically connected to the drain region 52D through 56B. Here, the aspect ratio of the contact hole 60A is 0.4 or more.

  An interelectrode insulating film 62 is formed on the surface of the pixel electrode 34. In the present embodiment, the interelectrode insulating film 62 is made of a silicon oxide film or a silicon nitride film having a thickness of 400 nm or less.

  The common electrode 38 described above is formed on the upper layer of the interelectrode insulating film 62. Here, the common electrode 38 functions as a counter electrode with respect to the pixel electrode 34, and is opposed to the pixel electrode 34 via the interelectrode insulating film 62. Therefore, a storage capacitor 48 having the interelectrode insulating film 62 as a dielectric film is formed between the pixel electrode 34 and the common electrode 38. Further, the liquid crystal layer 30 can be driven by an electric field formed between the pixel electrode 34 and the common electrode 38, and an image can be displayed.

(Configuration around contact hole 60A)
As described above, in the present embodiment, on the element substrate 14, the pixel switching thin film transistor 42, the interlayer insulating films 56 and 60 covering the thin film transistor 42, and the contact hole 60 </ b> A and the drain electrode 58 formed in the interlayer insulating film 60. A pixel electrode 34 electrically connected to the drain region 52D of the thin film transistor 42 via the electrode, an interelectrode insulating film 62 covering the pixel electrode 34, and a common electrode 38 formed in an upper layer of the interelectrode insulating film 62, Are formed in order.

(Production method)
FIG. 4 is a process cross-sectional view illustrating a method for manufacturing the element substrate 14 used in the liquid crystal device 10 according to the present embodiment. Among the manufacturing processes of the liquid crystal device 10 of the present embodiment, in the manufacturing process of the element substrate 14, a base protective film (not shown) made of a silicon oxide film was formed on the surface of the light-transmitting insulating substrate 14A made of a glass substrate. Thereafter, a thin film transistor forming step is performed.
Specifically, first, a semiconductor film 52A made of a polysilicon film is formed in an island shape. For this purpose, a semiconductor film made of an amorphous silicon film is formed on the entire surface of the light transmissive insulating substrate 14A under a temperature condition of 150 to 450 ° C. by plasma CVD, for example, to a thickness of 40 to 50 nm. After the formation, the silicon film is polycrystallized by a laser annealing method or the like, and then patterned using a photolithography technique to form the semiconductor film 52A.

  Next, a gate insulating film 54 made of a silicon nitride film, a silicon oxide film, or a laminated film thereof is formed on the surface of the semiconductor film 52A by using a CVD method or the like.

  Next, after forming a metal film such as a molybdenum film, an aluminum film, a titanium film, a tungsten film, or a tantalum film on the entire surface of the light-transmitting insulating substrate 14A, patterning is performed using a photolithography technique, and a gate wiring 46 (gate Electrode).

  Next, impurities are introduced into the semiconductor film 52A to form a source region 52C, a drain region 52D, and the like.

  Next, in the first interlayer insulating film forming step, an interlayer insulating film 56 made of a silicon nitride film, a silicon oxide film, or a laminated film thereof is formed using a CVD method or the like.

  Next, contact holes 56A and 56B are formed in the interlayer insulating film 56 by using a photolithography technique.

  Next, a metal film such as a molybdenum film, an aluminum film, a titanium film, a tungsten film, a tantalum film, or a laminated film thereof is formed on the entire surface of the light transmissive insulating substrate 14A, and then patterned using a photolithography technique. Then, the data wiring 44 and the drain electrode 58 are formed.

  Next, in the second interlayer insulating film forming step, a photosensitive resin is applied, and then exposed and developed. As shown in FIG. 4A, the interlayer insulating film 60 (planarizing film) provided with the contact holes 60A. Is formed to a thickness of 1.5 to 3.0 μm.

  Next, after forming a light-transmitting conductive film made of an ITO film on the entire surface of the light-transmitting insulating substrate 14A, patterning is performed using a photolithography technique, and the pixel electrode 34 is formed as shown in FIG. Form.

  Next, in the interelectrode insulating film forming step, as shown in FIG. 4C, an interelectrode insulating film 62 made of a silicon nitride film or a silicon oxide film having a thickness of 400 nm or less is formed using a CVD method or the like. Form.

  Next, as shown in FIG. 4D, after forming a light-transmitting conductive film 64 made of an ITO film on the entire surface of the light-transmitting insulating substrate 14A, a photosensitive resin is applied, exposed, and developed. As shown in FIG. 4E, a resist mask 66 is formed in a region where the common electrode 38 is left. Then, with the resist mask 66 formed, the light transmissive conductive film 64 is etched to form the common electrode 38 (see FIG. 3A).

[Other Embodiments]
Subsequently, other embodiments will be described. The present embodiment is different from the above embodiment in the formation positions of the plurality of openings 50 of the common electrode 38, and the other points are the same as the above embodiment.
5 to 7 are plan views of pixels of the liquid crystal device according to the present embodiment.

  First, as shown in FIG. 5, the liquid crystal device 68 includes a plurality of pixels 70 arranged in a matrix. The common electrode 72 of the pixel 70 includes a plurality of french 74 arranged in parallel with the gate wiring 46 at equal intervals, and a plurality of slit-shaped openings 50 extending in parallel with each other along the extending direction of the gate wiring 46. And a bar 76 connecting one end of the French 74 is formed. The pixel 70 (common electrode 72) is disposed so as to be inclined with respect to the vertical direction or the horizontal direction of the liquid crystal panel. The crossing angle between the major axis direction or the minor axis direction of the opening 50 and the region frame of the pixel 70 is arranged to be a right angle. The alignment film (not shown) of the element substrate 14 and the alignment film (not shown) of the counter substrate 12 are both a predetermined angle α (for example, a predetermined angle α) with the major axis direction or minor axis direction of the opening 50 in plan view. Is 5 degrees).

  Next, as shown in FIG. 6, the liquid crystal device 78 has a plurality of pixels 80 arranged in a matrix. The common electrode 82 of the pixel 80 includes a plurality of slit-like openings 50 extending in parallel with each other along the extending direction of the data wiring 44. The pixel 80 (common electrode 82) is disposed so as to be inclined with respect to the vertical direction or the horizontal direction of the liquid crystal panel. The crossing angle between the major axis direction or the minor axis direction of the opening 50 and the region frame of the pixel 80 is arranged to be a right angle.

  Next, as shown in FIG. 7, the liquid crystal device 84 has a plurality of pixels 86 arranged in a matrix. The common electrode 88 of the pixel 86 includes a plurality of French 74 arranged in parallel with the data wiring 44 at equal intervals, and a plurality of slit-shaped openings 50 extending in parallel with each other along the extending direction of the data wiring 44. And a bar 76 connecting one end of the French 74 is formed. The pixel 86 (common electrode 88) is disposed so as to be inclined with respect to the vertical direction or the horizontal direction of the liquid crystal panel. The crossing angle between the major axis direction or the minor axis direction of the opening 50 and the region frame of the pixel 86 is arranged to be a right angle.

Further, the present embodiment is different from the above embodiment in the formation positions of the thin film transistor 42 and the contact portion (not shown), and the other points are the same as the above embodiment.
8 to 11 are plan views of pixels of the liquid crystal device according to this embodiment.

  First, as shown in FIG. 8, the liquid crystal device 90 has a plurality of pixels 92 arranged in a matrix. The common electrode 38 of the pixel 92 includes a plurality of slit-like openings 50 extending in parallel with each other along the extending direction of the gate wiring 46. The pixel 92 (common electrode 38) is disposed so as to be inclined with respect to the vertical direction or the horizontal direction of the liquid crystal panel. The crossing angle between the major axis direction or the minor axis direction of the opening 50 and the region frame of the pixel 92 is arranged to be a right angle. Further, in the liquid crystal device 90, the thin film transistor 42 is formed in a space generated by tilting the plurality of pixels 92.

  Next, as shown in FIG. 9, the liquid crystal device 94 has a plurality of pixels 96 arranged in a matrix. The common electrode 72 of the pixel 96 includes a plurality of blanches 74 arranged in parallel with the gate wiring 46 at equal intervals, and a plurality of slit-shaped openings 50 extending in parallel with each other along the extending direction of the gate wiring 46. And a bar 76 connecting one end of the French 74 is formed. The pixel 96 (common electrode 72) is disposed so as to be inclined with respect to the vertical direction or the horizontal direction of the liquid crystal panel. The crossing angle between the major axis direction or the minor axis direction of the opening 50 and the region frame of the pixel 96 is arranged to be a right angle. Further, in the liquid crystal device 94, the thin film transistor 42 is formed in a space generated by tilting the plurality of pixels 96.

  Next, as shown in FIG. 10, the liquid crystal device 98 includes a plurality of pixels 100 arranged in a matrix. The common electrode 82 of the pixel 100 includes a plurality of slit-like openings 50 extending in parallel with each other along the extending direction of the data wiring 44. The pixel 100 (common electrode 82) is disposed so as to be inclined with respect to the vertical direction or the horizontal direction of the liquid crystal panel. The crossing angle between the long axis direction or the short axis direction of the opening 50 and the region frame of the pixel 100 is arranged to be a right angle. Further, in the liquid crystal device 98, the thin film transistor 42 is formed in a space generated by tilting the plurality of pixels 100.

  Next, as shown in FIG. 11, the liquid crystal device 102 includes a plurality of pixels 104 arranged in a matrix. The common electrode 88 of the pixel 104 includes a plurality of French 74 arranged in parallel with the data wiring 44 at equal intervals, and a plurality of slit-shaped openings 50 extending in parallel with each other along the extending direction of the data wiring 44. And a bar 76 connecting one end of the French 74 is formed. The pixel 104 (common electrode 88) is disposed so as to be inclined with respect to the vertical direction or the horizontal direction of the liquid crystal panel. The crossing angle between the major axis direction or the minor axis direction of the opening 50 and the region frame of the pixel 104 is arranged to be a right angle. Further, in the liquid crystal device 102, the thin film transistor 42 is formed in a space generated by tilting the plurality of pixels 104.

  Accordingly, the display area of the pixels 92, 96, 100, and 104 is expanded by placing the thin film transistor 42 and the contact portion in a space created by tilting the pixels 92, 96, 100, and 104. Liquid crystal devices 90, 94, 98, and 102 can be obtained. Although the opening 50 is formed in the common electrode in the above configuration, the opening 50 may be formed in the pixel electrode instead of the common electrode.

[Example of mounting on electronic equipment]
Next, an electronic apparatus to which the liquid crystal device 10 according to the above-described embodiment is applied will be described. FIG. 12A illustrates a configuration of a mobile personal computer including the liquid crystal device 10. The personal computer 106 includes the liquid crystal device 10 and a main body 108. The main body unit 108 is provided with a power switch 110 and a keyboard 112. FIG. 12B illustrates a structure of a mobile phone provided with the liquid crystal device 10. The mobile phone 114 includes a plurality of operation buttons 116, scroll buttons 118, and the liquid crystal device 10. By operating the scroll button 118, the screen displayed on the liquid crystal device 10 is scrolled. FIG. 12C shows the configuration of a portable information terminal (PDA: Personal Digital Assistants) to which the liquid crystal device 10 is applied. The information portable terminal 120 includes a plurality of operation buttons 122, a power switch 124, and the liquid crystal device 10. When the power switch 124 is operated, various types of information such as an address book and a schedule book are displayed on the liquid crystal device 10.

  Note that electronic devices to which the liquid crystal device 10 is applied include, in addition to those shown in FIG. 12, a digital still camera, a liquid crystal television, a viewfinder type, a monitor direct view type video tape recorder, a car navigation device, a pager, an electronic notebook, and a calculator. , A word processor, a workstation, a video phone, a POS terminal, and a device equipped with a touch panel. And the liquid crystal device 10 mentioned above is applicable as a display part of these various electronic devices.

The top view which looked at the liquid crystal device concerning this embodiment from the counter substrate side with each component formed on it, and its II sectional view. FIG. 3 is an equivalent circuit diagram illustrating an electrical configuration of an image display area of an element substrate used in the liquid crystal device according to the embodiment. FIG. 4 is a cross-sectional view of one pixel of the liquid crystal device according to the present embodiment and a plan view of adjacent pixels on the element substrate. Process sectional drawing which shows the manufacturing method of the element substrate used for the liquid crystal device which concerns on this embodiment. The top view of the pixel of the liquid crystal device which concerns on other embodiment. The top view of the pixel of the liquid crystal device which concerns on other embodiment. The top view of the pixel of the liquid crystal device which concerns on other embodiment. The top view of the pixel of the liquid crystal device which concerns on other embodiment. The top view of the pixel of the liquid crystal device which concerns on other embodiment. The top view of the pixel of the liquid crystal device which concerns on other embodiment. The top view of the pixel of the liquid crystal device which concerns on other embodiment. Explanatory drawing of the electronic device using the liquid crystal device which concerns on this embodiment. The top view for one pixel of the conventional liquid crystal device.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 10 ... Liquid crystal device 12 ... Opposite board | substrate (2nd board | substrate) 12A ... Light-transmissive insulating board 14 ... Element board | substrate (1st board | substrate) 14A ... Light-transmissive insulating board 16 ... Seal part 18 ... Data wiring drive circuit 20 ... Mounting terminal DESCRIPTION OF SYMBOLS 22 ... Gate wiring drive circuit 24 ... Image display area 26 ... Wiring 28 ... Frame 30 ... Liquid crystal layer 32 ... Liquid crystal panel 34 ... Pixel electrode 36 ... Light shielding film 38 ... Common electrode 40 ... Pixel 42 ... Thin-film transistor 44 ... Data wiring 46 ... Gate Wiring 48 ... Retention capacitance 50 ... Opening 52A ... Semiconductor film 52B ... Channel formation region 52C ... Source region 52D ... Drain region 54 ... Gate insulation film 56 ... Interlayer insulation film 56A, 56B ... Contact hole 58 ... Drain electrode 60 ... Interlayer insulation Film 60A ... Contact hole 62 ... Interelectrode insulating film 64 ... Light transmissive Electrode film 66 ... resist mask 68 ... liquid crystal device 70 ... pixel 72 ... common electrode 74 ... brench 76 ... bar 78 ... liquid crystal device 80 ... pixel 82 ... common electrode 84 ... liquid crystal device 86 ... pixel 88 ... common electrode 90 ... liquid crystal device 92 ... Pixel 94 ... Liquid crystal device 96 ... Pixel 98 ... Liquid crystal device 100 ... Pixel 102 ... Liquid crystal device 104 ... Pixel 106 ... Personal computer 108 ... Main body 110 ... Power switch 112 ... Keyboard 114 ... Mobile phone 116 ... Operation button 118 ... Scroll button 120 ... information portable terminal 122 ... operation button 124 ... power switch.

Claims (6)

A first substrate;
A gate wiring formed on the first substrate;
A data line that intersects the gate line and defines a rectangular pixel region;
A thin film transistor connected to the gate line and the data line;
A common electrode corresponding to the region of the pixel, having a plurality of slit-like openings, and a crossing angle between a major axis direction or a minor axis direction of the openings and the region frame of the pixel is a right angle;
A pixel electrode connected to the thin film transistor and overlapping the common electrode;
A second substrate disposed to face the first substrate;
A liquid crystal layer provided between the first substrate and the second substrate;
Including
A liquid crystal panel is formed by the first substrate, the second substrate, and the liquid crystal layer,
A liquid crystal device, wherein the pixel electrode and the common electrode are inclined with respect to a vertical direction or a horizontal direction of the liquid crystal panel. A first substrate;
A gate wiring formed on the first substrate;
A data line that intersects the gate line and defines a region of a rectangular pixel;
A thin film transistor connected to the gate line and the data line;
A common electrode formed corresponding to the region of the pixel;
A pixel electrode connected to the thin film transistor and overlapping the common electrode, having a plurality of slit-like openings, and a crossing angle between a major axis direction or a minor axis direction of the openings and a region frame of the pixel is a right angle; ,
A second substrate disposed to face the first substrate;
A liquid crystal layer provided between the first substrate and the second substrate;
Including
A liquid crystal panel is formed by the first substrate, the second substrate, and the liquid crystal layer,
A liquid crystal device, wherein the pixel electrode and the common electrode are inclined with respect to a vertical direction or a horizontal direction of the liquid crystal panel. The liquid crystal device according to claim 1 or 2,
The second substrate has a light shielding film in a region facing a vertical and horizontal boundary region of the pixel electrode,
A liquid crystal device, wherein at least a part of the pixel electrode or the common electrode overlaps the light shielding film. The liquid crystal device according to any one of claims 1 to 3,
The liquid crystal device, wherein the pixel electrode and the common electrode are made of a light transmissive conductive film. The liquid crystal device according to any one of claims 1 to 4,
The liquid crystal device, wherein the thin film transistor is provided outside a region of the pixel.   An electronic apparatus comprising the liquid crystal device according to claim 1.

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