JP2009076726A - Wiring board for mounting x-ray detecting element, and x-ray detecting device - Google Patents

Wiring board for mounting x-ray detecting element, and x-ray detecting device Download PDF

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JP2009076726A
JP2009076726A JP2007244925A JP2007244925A JP2009076726A JP 2009076726 A JP2009076726 A JP 2009076726A JP 2007244925 A JP2007244925 A JP 2007244925A JP 2007244925 A JP2007244925 A JP 2007244925A JP 2009076726 A JP2009076726 A JP 2009076726A
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interlayer
ray detection
conductor
detection element
mounting
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JP4722104B2 (en
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Sadakatsu Yoshida
定功 吉田
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Kyocera Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1517Multilayer substrate
    • H01L2924/15172Fan-out arrangement of the internal vias
    • H01L2924/15174Fan-out arrangement of the internal vias in different layers of the multilayer substrate

Abstract

<P>PROBLEM TO BE SOLVED: To provide an X-ray detecting device of high picture quality, where an influence of reflected X rays from a backside of a wiring board for X-ray detecting element mounting is suppressed. <P>SOLUTION: The wiring board for X-ray detecting element mounting includes a base 1 on which a plurality of insulating layers 1 are stacked, a connection pad 2 for flip-chip mounting an X-ray detecting element 5 formed on a top surface of the base 1, a terminal electrode 3 formed on an external surface of the base 1, and internal wiring 4 including a plurality of through conductors 4a disposed below a mounting region 5a and connecting the connection pad 2 to the terminal electrode 3, wherein an interlayer conductor layer 6 having an opening corresponding to the through conductors 4a is formed in a projection region on the top surface of the base 1 to include the mounting region 5a, the plurality of through conductors 4a are connected via an interlayer connecting conductor 8 formed providing insulating regions 6a to 6c in the opening for the interlayer conductor layer 6, and one insulating region 6c does not overlap other insulating regions 6a and 6b in top plane view. The interlayer conductor layer 6 and interlayer connecting conductor 8 block reflected X-rays to suppress an influence thereof. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、X線検出素子搭載用配線基板およびそれを用いたX線検出装置に関するものである。   The present invention relates to an X-ray detection element mounting wiring board and an X-ray detection apparatus using the same.

近年の半導体技術の進歩に伴い、X線機器のデジタル化が進んでいる。また、X線画像の表示,記録や保存については、従来はフィルム等にX線画像を記録し保存していたのに対して、リアルタイムの画像表示や画像データの保存や転送が容易になっている。このようなX線機器として、例えば歯科用のX線カメラには、外部から照射されたX線を画像情報に変換するためのX線検出素子が搭載されている。   With recent advances in semiconductor technology, digitalization of X-ray equipment is progressing. Also, with regard to the display, recording and storage of X-ray images, X-ray images are conventionally recorded and stored on film or the like, but real-time image display and image data storage and transfer are facilitated. Yes. As such an X-ray apparatus, for example, a dental X-ray camera is equipped with an X-ray detection element for converting X-rays irradiated from the outside into image information.

X線検出素子は、その上面に配列形成された多数のフォトダイオードとその上に形成されたシンチレータとで主に構成されており、X線検出素子に照射されたX線がシンチレータで蛍光に変換され、この光により各フォトダイオードの電圧電流特性が変化し、この変化をX線画像情報として取り出すものである。   The X-ray detection element is mainly composed of a large number of photodiodes arranged on the upper surface thereof and a scintillator formed thereon, and the X-rays irradiated on the X-ray detection element are converted into fluorescence by the scintillator. This light changes the voltage-current characteristics of each photodiode, and this change is extracted as X-ray image information.

このようなX線検出素子は、これを搭載するための酸化アルミニウム質焼結体等のセラミック基体とタングステン(W)等のメタライズ配線導体とからなるX線検出素子搭載用配線基板に搭載されてX線機器に組み込まれている。しかしながら、セラミック基体を構成する酸化アルミニウム質焼結体は、X線を透過させやすい性質を有していることから、X線検出素子を搭載してX線カメラの撮像部として用いた場合に、X線検出素子の上面に被写体を透してX線を照射すると、撮像部の後方に位置する他の部材等で反射したX線がセラミック基体を透ってX線検出素子に裏面側から侵入し、これがX線検出素子に被写体と異なる不要な映像を重畳させてしまい、そのため、この不要な映像までもがX線画像情報として変換されてしまい、その結果、正確かつ鮮明な被写体の画像が得られにくいという問題点を有していた。   Such an X-ray detection element is mounted on a wiring board for mounting an X-ray detection element comprising a ceramic substrate such as an aluminum oxide sintered body for mounting the X-ray detection element and a metallized wiring conductor such as tungsten (W). Built in X-ray equipment. However, since the aluminum oxide sintered body constituting the ceramic base has the property of easily transmitting X-rays, when an X-ray detection element is mounted and used as an imaging unit of an X-ray camera, When X-rays are irradiated through the subject through the top surface of the X-ray detection element, X-rays reflected by other members located behind the imaging unit penetrate the ceramic substrate and enter the X-ray detection element from the back side. However, this causes an unnecessary image different from the subject to be superimposed on the X-ray detection element, so that even the unnecessary image is converted as X-ray image information, and as a result, an accurate and clear image of the subject is obtained. There was a problem that it was difficult to obtain.

このため、従来のX線検出素子搭載用配線基板は、例えば図7に断面図で示すように、その上面中央部にX線検出素子105を搭載するための実装領域105aを有する基体101と、この基体101の実装領域105a周辺から下面にかけて導出する複数の内部配線104と、下面からの反射したX線を遮蔽するための遮蔽用メタライズ層106から構成されていた。このX線検出素子搭載用配線基板にX線検出素子105を搭載してX線検出素子105の端子電極と接続パッド102とをボンディングワイヤ107を介して電気的に接続し、端子電極103と外部の電気回路に接続される外部接続用ケーブル109とを接続するとともに、これらを密閉容器内に密閉することにより、X線カメラの撮像部としていた。これによれば、遮蔽用メタライズ層106により反射したX線がX線検出素子105の下面から侵入するのを遮蔽することができるので明瞭なX線画像を得ることができるというものであった(例えば、特許文献1を参照)。
特開2001−94139号公報
For this reason, the conventional X-ray detection element mounting wiring board includes, for example, a base 101 having a mounting region 105a for mounting the X-ray detection element 105 at the center of the upper surface thereof, as shown in a sectional view in FIG. The substrate 101 is composed of a plurality of internal wirings 104 led out from the periphery of the mounting region 105a to the lower surface, and a shielding metallized layer 106 for shielding X-rays reflected from the lower surface. The X-ray detection element 105 is mounted on the wiring board for mounting the X-ray detection element, the terminal electrode of the X-ray detection element 105 and the connection pad 102 are electrically connected via the bonding wire 107, and the terminal electrode 103 is connected to the outside. The external connection cable 109 connected to the electrical circuit is connected, and these are hermetically sealed in an airtight container, thereby forming an imaging unit of the X-ray camera. According to this, since the X-ray reflected by the shielding metallization layer 106 can be shielded from entering from the lower surface of the X-ray detection element 105, a clear X-ray image can be obtained ( For example, see Patent Document 1).
Japanese Patent Laid-Open No. 2001-94139

近年のX線機器に求められる高解像度化に対応するために、X線検出素子は端子数が増加してフリップチップ実装されるようになり、これに対応するX線検出素子搭載用配線基板は、増加する外部の電気回路に接続するための接続端子の数を増やすために基板の下面全体に縦横の並びにアレイ状に接続端子を形成することが必要となっている。また、従来の静止画像のみならず、動画の撮影を行なうことでより情報量を増やし、診断の精度を上げることも要求されている。   In order to cope with the high resolution required for X-ray equipment in recent years, the number of terminals of X-ray detection elements has increased and flip-chip mounting has been achieved. The corresponding wiring board for mounting X-ray detection elements is In order to increase the number of connection terminals for connecting to an increasing number of external electric circuits, it is necessary to form the connection terminals in the form of arrays in the vertical and horizontal directions on the entire lower surface of the substrate. In addition to conventional still images, it is also required to increase the amount of information and improve diagnosis accuracy by shooting moving images.

しかしながら、従来のX線検出素子搭載用配線基板は、基体101の実装領域105aの下にX線を遮蔽するためだけの遮蔽用メタライズ層106を形成しているため、この遮蔽用メタライズ層106を避けて内部配線102を展開して形成しなければならなくなり、設計が複雑になり層数を増やす必要が出るので小型化・薄型化が困難になるとともに、内部配線104の配線長が長くなることにより高解像度のX線での動画撮影に要求される高速動作も困難となってしまうという問題点があった。   However, since the conventional X-ray detection element mounting wiring board is formed with the shielding metallized layer 106 only for shielding X-rays under the mounting region 105a of the base 101, the shielding metallized layer 106 is not provided. As a result, the internal wiring 102 must be expanded and formed, the design becomes complicated and the number of layers needs to be increased, making it difficult to reduce the size and thickness, and to increase the wiring length of the internal wiring 104. Therefore, there is a problem that high-speed operation required for moving image shooting with high-resolution X-rays becomes difficult.

また、遮蔽用メタライズ層106を避けずに内部配線104を展開するには、内部配線104の貫通導体が遮蔽用メタライズ層106と絶縁されて遮蔽用メタライズ層106を貫通するように、貫通導体と遮蔽用メタライズ層106との間に絶縁領域(隙間)を設ければよい。しかしながら、絶縁層101を垂直に(絶縁層101の積層方向に平行に)貫通する通常の貫通導体を形成して絶縁領域を設けると、上下に位置する複数の絶縁領域が上面視で重なるので、この部分ではX線検出素子搭載用配線基板の下面から上面にかけて遮蔽用メタライズ層106が存在しなくなってしまい、反射したX線がここを通過してX線検出素子に侵入してしまうという問題点があった。   Further, in order to expand the internal wiring 104 without avoiding the shielding metallization layer 106, the through-conductor is formed so that the through-conductor of the internal wiring 104 is insulated from the shielding metallization layer 106 and penetrates the shielding metallization layer 106. An insulating region (gap) may be provided between the shielding metallized layer 106. However, when an insulating region is provided by forming a normal through conductor that penetrates the insulating layer 101 vertically (parallel to the laminating direction of the insulating layer 101), a plurality of upper and lower insulating regions overlap in a top view. In this portion, the shielding metallization layer 106 does not exist from the lower surface to the upper surface of the wiring board for mounting the X-ray detection element, and the reflected X-ray passes through the X-ray detection element and enters the X-ray detection element. was there.

本発明はかかる従来の問題点に鑑み案出されたものであり、その目的は、X線検出素子の上面に被写体を透してX線を照射した際に、X線検出素子搭載用配線基板の下方に位置する他の部材等でX線が反射したとしても、反射したX線がX線検出素子に裏面側から侵入することがなく、小型かつ薄型であり、高解像度で高速な動作が可能なX線検出素子搭載用配線基板、およびこれを用いたX線検出装置を提供することにある。   The present invention has been devised in view of such conventional problems, and an object of the present invention is to provide an X-ray detection element mounting wiring board when X-rays are irradiated through a subject through the upper surface of the X-ray detection element. Even if X-rays are reflected by other members located below the X-rays, the reflected X-rays do not enter the X-ray detection element from the back side, are small and thin, and operate at high resolution and high speed. An object is to provide a possible wiring board for mounting an X-ray detection element and an X-ray detection apparatus using the same.

本発明のX線検出素子搭載用配線基板は、複数の絶縁層が積層されてなる基体と、該基体の上面のX線検出素子の実装領域に形成された前記X線検出素子をフリップチップ実装するための複数の接続パッドと、前記基体の外面に形成された複数の端子電極と、前記基体の内部に形成され、前記実装領域の下方に配置された複数の貫通導体を含む、前記複数の接続パッドと前記複数の端子電極とを接続する複数の内部配線とを有するX線検出素子搭載用配線基板であって、前記複数の貫通導体に対応する開口を有する複数層の層間導体層が、前記基体の前記上面への投影領域に前記実装領域が含まれるように前記絶縁層間に形成され、前記複数の貫通導体は、前記開口内で前記層間導体層との間に絶縁領域を設けて前記層間導体層を貫通するとともに、前記層間導体層が形成された前記絶縁層間のうち少なくとも1つにおいて前記開口内で前記層間導体層との間に前記絶縁領域を設けて形成された、前記貫通導体の横断面より大きい層間接続導体を間に介して接続されており、少なくとも1つの前記絶縁領域は、上面視して他の前記絶縁領域と重ならないことを特徴とするものである。   A wiring board for mounting an X-ray detection element according to the present invention includes a substrate in which a plurality of insulating layers are laminated, and the X-ray detection element formed in the X-ray detection element mounting region on the upper surface of the substrate is flip-chip mounted. A plurality of connection pads, a plurality of terminal electrodes formed on an outer surface of the base, and a plurality of through conductors formed inside the base and disposed below the mounting region. A wiring board for mounting an X-ray detection element having a plurality of internal wirings connecting a connection pad and the plurality of terminal electrodes, and a plurality of interlayer conductor layers having openings corresponding to the plurality of through conductors, The insulating layer is formed between the insulating layers so that the mounting region is included in the projected region on the upper surface of the base body, and the plurality of through conductors are provided with an insulating region between the interlayer conductor layers in the openings. When it penetrates the interlayer conductor layer In addition, in at least one of the insulating layers in which the interlayer conductor layer is formed, the cross-sectional area of the through conductor formed by providing the insulating region between the interlayer conductor layer in the opening is larger than that of the through conductor. It is connected via an interlayer connection conductor, and at least one of the insulating regions does not overlap with the other insulating regions in a top view.

また、本発明のX線検出素子搭載用配線基板は、上記構成において、前記層間導体層は3つ以上の絶縁層間に形成されており、上下に位置する複数の前記絶縁領域は、前記基体を下面側から斜めに見たときに一直線上に見通せないことを特徴とするものである。   In the X-ray detection element mounting wiring board according to the present invention, in the above configuration, the interlayer conductor layer is formed between three or more insulating layers, and the plurality of insulating regions positioned above and below include the base. When viewed obliquely from the lower surface side, it cannot be seen in a straight line.

また、本発明のX線検出装置は、上記いずれかの本発明のX線検出素子搭載用配線基板にX線検出素子がフリップチップ実装されていることを特徴とするものである。   The X-ray detection apparatus of the present invention is characterized in that the X-ray detection element is flip-chip mounted on any of the above-described wiring boards for mounting the X-ray detection element.

本発明のX線検出素子搭載用配線基板によれば、複数の貫通導体に対応する開口を有する複数層の層間導体層が、基体の上面への投影領域に実装領域が含まれるように絶縁層間に形成され、複数の貫通導体は、開口内で層間導体層との間に絶縁領域を設けて層間導体層を貫通するとともに、層間導体層が形成された絶縁層間のうち少なくとも1つにおいて開口内で層間導体層との間に絶縁領域を設けて形成された、貫通導体の横断面より大きい層間接続導体を間に介して接続されており、少なくとも1つの絶縁領域は、上面視して他の絶縁領域と重ならないことから、X線遮蔽用メタライズ層である層間導体層または層間接続導体が実装領域内の基体の下面から上面にかけて少なくとも1層は存在するので配線基板の裏面から侵入してくるX線のほとんどを遮蔽することができるとともに、X線を遮蔽するための層間導体層を避けて内部配線を形成しないので、X線画像の高解像度化に対応するためにX線検出素子の端子数が増えたとしても内部配線の展開が容易となり、配線長を長くする必要がないので、小型かつ薄型であり、高解像度でX線検出素子を高速で動作させることが可能となる。   According to the wiring board for mounting the X-ray detection element of the present invention, the plurality of interlayer conductor layers having openings corresponding to the plurality of through conductors are arranged so that the mounting area is included in the projection area on the upper surface of the substrate. The plurality of through conductors pass through the interlayer conductor layer by providing an insulating region between the interlayer conductor layer in the opening and in the opening in at least one of the insulating layers in which the interlayer conductor layer is formed. And an interlayer connection conductor that is larger than the cross section of the through conductor, formed by providing an insulating region between the interlayer conductor layers, and at least one insulating region is connected to the other in the top view. Since it does not overlap with the insulating region, there is at least one layer of the interlayer conductor layer or interlayer connection conductor, which is an X-ray shielding metallization layer, from the lower surface to the upper surface of the substrate in the mounting region, so that it enters from the back surface of the wiring board. X Since the internal wiring is not formed avoiding the interlayer conductor layer for shielding X-rays, the number of terminals of the X-ray detection element is increased in order to cope with higher resolution of the X-ray image. Even if the number is increased, the development of the internal wiring is facilitated, and it is not necessary to lengthen the wiring length. Therefore, the X-ray detection element can be operated at high speed with high resolution because it is small and thin.

また、本発明のX線検出素子搭載用配線基板によれば、上記構成において、層間導体層は3つ以上の絶縁層間に形成されており、上下に位置する複数の絶縁領域は、基体を下面側から斜めに見たときに一直線上に見通せない場合には、X線が配線基板の裏面から最下の絶縁領域およびその上の絶縁領域を通って斜めに侵入しても、直進するX線は、下の2つの絶縁領域より上の絶縁領域を通ることはなく、層間導体層または層間接続導体により遮蔽されるので、不要なX線の影響をより受けにくくなる。   According to the wiring board for mounting an X-ray detection element of the present invention, in the above configuration, the interlayer conductor layer is formed between three or more insulating layers, and the plurality of insulating regions positioned above and below are formed on the bottom surface of the substrate. If the X-ray cannot be seen in a straight line when viewed obliquely from the side, even if the X-ray enters diagonally from the back surface of the wiring board through the lowermost insulating region and the insulating region above it, the X-ray that goes straight Does not pass through the insulating region above the lower two insulating regions, and is shielded by the interlayer conductor layer or the interlayer connection conductor, so that it is less susceptible to unnecessary X-rays.

本発明のX線検出装置によれば、本発明のX線検出素子搭載用配線基板にX線検出素子がフリップチップ実装されていることから、小型薄型のX線検出素子搭載用配線基板であっても、反射した不要なX線を十分に遮蔽できるので、小型化かつ薄型化が可能で高画質となる。   According to the X-ray detection apparatus of the present invention, since the X-ray detection element is flip-chip mounted on the X-ray detection element mounting wiring board of the present invention, the X-ray detection element mounting wiring board is a small and thin X-ray detection element mounting wiring board. However, since unnecessary reflected X-rays can be sufficiently shielded, it is possible to reduce the size and thickness and to achieve high image quality.

次に、本発明のX線検出素子搭載用配線基板を添付の図面を参照しつつ詳細に説明する。   Next, the X-ray detection element mounting wiring board of the present invention will be described in detail with reference to the accompanying drawings.

図1(a)は、本発明のX線検出素子搭載用基板の実施の形態の一例を示す断面図であり、図1(b)は図1(a)のA部を上面視して拡大した断面図である。   FIG. 1A is a cross-sectional view showing an example of an embodiment of the substrate for mounting an X-ray detection element of the present invention, and FIG. 1B is an enlarged view of a portion A of FIG. FIG.

図1において、1a〜1eは絶縁層、1は複数の絶縁層1a〜1eが積層されてなる基体、2は接続パッド、3は端子電極、4は内部配線、4a,4cは貫通導体、4bは内部配線層、5はX線検出素子、5aはX線検出素子5の実装領域、6は層間導体層、6a,6b,6cは絶縁領域、7は接合材、8は層間接続導体である。   In FIG. 1, 1a to 1e are insulating layers, 1 is a substrate formed by laminating a plurality of insulating layers 1a to 1e, 2 is a connection pad, 3 is a terminal electrode, 4 is an internal wiring, 4a and 4c are through conductors, 4b Is an internal wiring layer, 5 is an X-ray detection element, 5a is a mounting area of the X-ray detection element 5, 6 is an interlayer conductor layer, 6a, 6b and 6c are insulating areas, 7 is a bonding material, and 8 is an interlayer connection conductor. .

図1に示す例では、基体1の上面のX線検出素子5の実装領域5aに形成された複数の接続パッド2に、X線検出素子5が接合材7を介してフリップチップ実装されており、これによりX線検出装置が構成されている。層間導体層6に接する絶縁層1a〜1eに設けられた貫通導体4aと、内部配線層4bと、内部配線層4bと端子電極3とを接続する貫通導体4cとから内部配線4は構成されている。層間導体層6は、内部配線4とは絶縁されており、X線を遮蔽する機能を有する。層間接続導体8は、層間導体層6が形成されている絶縁層1c・1d間に形成され、上下に位置する貫通導体4a同士を接続するとともに、層間導体層6と同様にX線を遮蔽する機能を有する。絶縁層1aの上にさらに絶縁層を設けて、その絶縁層と絶縁層1aとの層間および絶縁層内に内部配線層4dおよびこの内部配線層4dと接続パッド2とを接続する貫通導体4cを設けてもよい。   In the example shown in FIG. 1, the X-ray detection element 5 is flip-chip mounted on the plurality of connection pads 2 formed in the mounting region 5 a of the X-ray detection element 5 on the upper surface of the substrate 1 through the bonding material 7. Thus, an X-ray detection apparatus is configured. The internal wiring 4 is composed of a through conductor 4 a provided in the insulating layers 1 a to 1 e in contact with the interlayer conductor layer 6, an internal wiring layer 4 b, and a through conductor 4 c connecting the internal wiring layer 4 b and the terminal electrode 3. Yes. The interlayer conductor layer 6 is insulated from the internal wiring 4 and has a function of shielding X-rays. The interlayer connection conductor 8 is formed between the insulating layers 1 c and 1 d on which the interlayer conductor layer 6 is formed, and connects the through conductors 4 a located above and below and shields X-rays similarly to the interlayer conductor layer 6. It has a function. An insulating layer is further provided on the insulating layer 1a, and an internal wiring layer 4d and a through conductor 4c for connecting the internal wiring layer 4d and the connection pad 2 are provided between the insulating layer and the insulating layer 1a and in the insulating layer. It may be provided.

本発明のX線検出素子搭載用配線基板は、複数の絶縁層1a〜1eが積層されてなる基体1と、基体1の上面のX線検出素子5の実装領域5aに形成されたX線検出素子5をフリップチップ実装するための複数の接続パッド2と、基体1の外面に形成された複数の端子電極3と、基体1の内部に形成され、実装領域5aの下方に配置された複数の貫通導体4a,4cを含む、複数の接続パッド2と複数の端子電極3とを接続する複数の内部配線4とを有するX線検出素子搭載用配線基板であって、複数の貫通導体4aに対応する開口を有する複数層の層間導体層6が、基体1の上面への投影領域に実装領域5aが含まれるように絶縁層1a・1b,1b・1c,1c・1d間に形成され、複数の貫通導体4aは、開口内で層間導体層6との間に絶縁領域6a,6bを設けて層間導体層6を貫通するとともに、層間導体層6が形成された絶縁層1a・1b,1b・1c,1c・1d間のうち少なくとも1つにおいて開口内で層間導体層6との間に絶縁領域6cを設けて形成された、貫通導体6aの横断面より大きい層間接続導体8を間に介して互いに上下で接続されており、少なくとも1つの絶縁領域6cは、上面視して他の絶縁領域6a,6bと重ならないことを特徴とするものである。   The wiring board for mounting an X-ray detection element according to the present invention has an X-ray detection formed in a base 1 in which a plurality of insulating layers 1 a to 1 e are laminated and a mounting region 5 a of an X-ray detection element 5 on the upper surface of the base 1. A plurality of connection pads 2 for flip-chip mounting the element 5, a plurality of terminal electrodes 3 formed on the outer surface of the base 1, and a plurality of terminals formed inside the base 1 and disposed below the mounting region 5a An X-ray detection element mounting wiring board having a plurality of connection pads 2 and a plurality of internal wirings 4 for connecting a plurality of terminal electrodes 3 including through conductors 4a and 4c, corresponding to the plurality of through conductors 4a A plurality of interlayer conductor layers 6 having openings are formed between the insulating layers 1a, 1b, 1b, 1c, 1c, 1d so that the mounting area 5a is included in the projected area on the upper surface of the substrate 1. The through conductor 4a is between the interlayer conductor layer 6 in the opening. Insulating regions 6a and 6b are provided to penetrate the interlayer conductor layer 6, and at least one of the insulating layers 1a, 1b, 1b, 1c, 1c, and 1d formed with the interlayer conductor layer 6 has an interlayer conductor in the opening. The insulating layer 6c is provided between the upper and lower layers 6 and is connected to each other via an interlayer connection conductor 8 larger than the cross section of the through conductor 6a. The at least one insulating region 6c It is characterized by not overlapping with other insulating regions 6a and 6b.

このことから、X線遮蔽用メタライズ層である層間導体層6または層間接続導体8が実装領域5a内の基体1の下面から上面にかけて少なくとも1層は存在するので、配線基板の裏面から侵入してくるX線のほとんどを遮蔽することができるとともに、X線を遮蔽するための層間導体層6を避けて内部配線4を形成しないので、X線画像の高解像度化に対応するためにX線検出素子5の端子数が増えたとしても内部配線4の展開が容易となり、配線長を長くする必要がないので、小型かつ薄型であり、X線検出素子5をより高速で動作させることが可能なX線検出素子搭載用配線基板となる。   For this reason, since there is at least one layer of the interlayer conductor layer 6 or the interlayer connection conductor 8 which is an X-ray shielding metallization layer from the lower surface to the upper surface of the substrate 1 in the mounting region 5a, it penetrates from the back surface of the wiring board. Since most of the coming X-rays can be shielded and the internal wiring 4 is not formed avoiding the interlayer conductor layer 6 for shielding the X-rays, the X-ray detection is performed in order to cope with the high resolution of the X-ray image. Even if the number of terminals of the element 5 is increased, the development of the internal wiring 4 is facilitated, and it is not necessary to lengthen the wiring length. Therefore, it is small and thin, and the X-ray detection element 5 can be operated at a higher speed. It becomes a wiring board for mounting an X-ray detection element.

ここで実装領域5aとは、X線検出素子5をX線検出素子搭載用配線基板にフリップチップ実装した状態での、X線検出素子5の基体1の上面への投影領域のことである。図1(b)においては、実装領域5aはX線検出素子5の外形と同じ形状および寸法で1点鎖線で示してある。X線検出素子5の受光部がX線検出素子5の外形に対して小さい場合は、X線検出素子5の受光部の基体1の上面への投影領域であればよいが、不要なX線を確実に遮蔽するためにはX線検出素子5の基体1の上面への投影領域とするのがよい。   Here, the mounting region 5a is a projection region of the X-ray detection element 5 onto the upper surface of the substrate 1 in a state where the X-ray detection element 5 is flip-chip mounted on the wiring board for mounting the X-ray detection element. In FIG. 1 (b), the mounting region 5 a has the same shape and dimensions as the outer shape of the X-ray detection element 5 and is indicated by a one-dot chain line. When the light receiving part of the X-ray detection element 5 is smaller than the outer shape of the X-ray detection element 5, it may be a projection region on the upper surface of the base 1 of the light receiving part of the X-ray detection element 5, but unnecessary X-rays In order to reliably shield the X-ray detection element 5, a projection region on the upper surface of the base 1 of the X-ray detection element 5 is preferably used.

図1に示す例では、3つの絶縁層1a・1b,1b・1c,1c・1d間に開口を有する3層の層間導体層6・6・6が形成されている。上2層の層間導体6,6の開口内では、貫通導体4aが層間導体層6との間に絶縁領域6a,6bを設けて層間導体層6を貫通している。最下の層間導体層6の開口内には、貫通導体4aの横断面より大きい層間接続導体8が層間導体層6との間に絶縁領域6cを設けて形成されており、その上下の貫通導体4a・4aを接続している。この例の場合は、2層の層間導体6・6の開口径は同じで、上2層の層間導体6,6の開口径より層間接続導体8の径および下層の層間導体6の開口径の方が大きいので、上面視で上2層の絶縁領域6a,6bは、互いに完全に重なり、下層の絶縁領域6cとは重ならない。これにより配線基板の下面で反射したX線は、上面視した貫通導体4aの周辺では、1層の層間接続導体8により、または上2層の層間導体層6,6および層間接続導体8により、あるいは上2層の層間導体層6,6により、遮蔽されることとなる。   In the example shown in FIG. 1, three interlayer conductor layers 6, 6, 6 having openings between three insulating layers 1 a, 1 b, 1 b, 1 c, 1 c, 1 d are formed. In the openings of the upper two interlayer conductors 6, 6, the through conductor 4 a penetrates the interlayer conductor layer 6 by providing insulating regions 6 a, 6 b with the interlayer conductor layer 6. In the opening of the lowermost interlayer conductor layer 6, an interlayer connection conductor 8 larger than the cross section of the through conductor 4 a is formed by providing an insulating region 6 c between the interlayer conductor layer 6. 4a and 4a are connected. In this example, the opening diameters of the two-layer interlayer conductors 6 and 6 are the same, and the diameter of the interlayer connection conductor 8 and the opening diameter of the lower-layer interlayer conductor 6 are larger than the opening diameters of the upper-layer interlayer conductors 6 and 6. Therefore, the upper two insulating regions 6a and 6b completely overlap each other and do not overlap with the lower insulating region 6c when viewed from above. As a result, the X-rays reflected from the lower surface of the wiring board are surrounded by the one-layer interlayer connection conductor 8 or the upper two-layer interlayer conductor layers 6 and 6 and the interlayer connection conductor 8 in the vicinity of the through conductor 4a as viewed from above. Alternatively, it is shielded by the upper two interlayer conductor layers 6 and 6.

図2に図1と同様の図面で示す例ように、層間接続導体8は、層間導体層6が形成された絶縁層1a・1b,1b・1c,1c・1d間のすべてにおいて形成されるのが好ましい。層間接続導体8を設けることにより、X線検出素子搭載用配線基板を作製する際に絶縁層1a・1b,1b・1c,1c・1d間の位置ずれが発生したとしても上下の貫通導体4a・4a同士の接続が容易となるとともに、小さい絶縁領域6a,6b,6cをより容易に形成することができるので、よりX線の遮蔽効果の高いものとなる。層間接続導体8を形成しない場合は、貫通導体4aと層間導体層6との間の絶縁領域6a,6b,6cの大きさは、絶縁性を確保するのに必要な寸法に貫通導体4aと層間導体層6との位置ずれ量を加えた大きさとしなければならないのに対して、層間接続導体8を形成する場合は、層間導体層6と層間接続導体8とを導体ペーストの印刷により同時に形成することで絶縁性を確保するのに必要な寸法だけにすることができる。また、貫通導体4aの上に層間接続導体8があることで、貫通導体4aの上面とその周囲に形成された層間導体層6の上面との高さの差がなくなるので、セラミックグリーンシートを積層して作製する際に上下層の貫通導体4a・4a同士の接続が容易となるとともに、複数の絶縁層1a〜1fを積層した際にこの高さの差が累積されて配線基板の上面の平坦性が低下することがないので、X線検出素子の実装信頼性も向上する。   2, the interlayer connection conductor 8 is formed in all of the insulating layers 1 a, 1 b, 1 b, 1 c, 1 c, 1 d on which the interlayer conductor layer 6 is formed. Is preferred. By providing the interlayer connection conductor 8, the upper and lower penetrating conductors 4 a, even if a displacement occurs between the insulating layers 1 a, 1 b, 1 b, 1 c, 1 c, 1 d when producing the wiring board for mounting the X-ray detection element. 4a can be easily connected to each other, and the small insulating regions 6a, 6b, and 6c can be formed more easily, so that the X-ray shielding effect is higher. In the case where the interlayer connection conductor 8 is not formed, the size of the insulating regions 6a, 6b, 6c between the through conductor 4a and the interlayer conductor layer 6 is set to a size necessary for ensuring insulation, and between the through conductor 4a and the interlayer conductor. In contrast to the case where the interlayer connection conductor 8 is formed, the interlayer connection conductor 8 and the interlayer connection conductor 8 are simultaneously formed by printing a conductor paste. Therefore, it is possible to make only the dimensions necessary to ensure insulation. Further, since the interlayer connection conductor 8 is provided on the through conductor 4a, there is no difference in height between the upper surface of the through conductor 4a and the upper surface of the interlayer conductor layer 6 formed therearound. Thus, when the plurality of insulating layers 1a to 1f are stacked, the difference in height is accumulated and the upper surface of the wiring board is flattened. Therefore, the mounting reliability of the X-ray detection element is also improved.

また、図2に示す例のように、上下に位置する絶縁領域6a,6b,6cは上面視して全てが互いに重ならないようにするのが好ましい。このようにすることで、X線遮蔽用メタライズ層である層間導体層6および層間接続導体8のいずれかが実装領域5a内の基体1の下面から上面にかけて少なくとも2層は存在するので、配線基板の裏面から侵入してくるX線の遮蔽効果がより高まる。図2に示す例では、3層の層間導体層6,6,6に設けた開口およびその内側の層間接続導体8は、同じ層間導体層6に設けたものは同じ大きさであり、絶縁層1aと絶縁層1bとの層間の(上層の)層間導体層6の開口および層間接続導体8の大きさは小径で、絶縁層1bと絶縁層1cとの層間の(中層の)層間導体層6の開口および層間接続導体8の大きさは中径で、絶縁層1cと絶縁層1dとの層間の(下層の)層間導体層6の開口および層間接続導体8の大きさは大径となっている。3層のうちの1層の層間接続導体8を設けない場合でも、その他の2層の層間接続導体8,8をいずれも1層の層間導体層6の開口より大きく、かつ互いに異なる大きさとして、それら開口の径に応じた層間接続導体8を設けることにより、上下に位置する絶縁領域6a,6b,6cを上面視して全てが互いに重ならないようにすることができる。   Further, as in the example shown in FIG. 2, it is preferable that the insulating regions 6 a, 6 b, 6 c positioned above and below do not overlap each other when viewed from above. By doing so, at least two layers of the interlayer conductor layer 6 and the interlayer connection conductor 8 which are X-ray shielding metallization layers exist from the lower surface to the upper surface of the substrate 1 in the mounting region 5a. The effect of shielding X-rays entering from the back surface is further increased. In the example shown in FIG. 2, the openings provided in the three interlayer conductor layers 6, 6, and 6 and the interlayer connection conductor 8 inside thereof have the same size as those provided in the same interlayer conductor layer 6. The opening of the interlayer conductor layer 6 between the layer 1a and the insulating layer 1b and the size of the interlayer connection conductor 8 are small in diameter, and the interlayer conductor layer 6 between the layers of the insulating layer 1b and the insulating layer 1c (middle layer). The size of the opening and the interlayer connection conductor 8 is medium, and the size of the opening (interlayer connection layer 6) between the insulating layers 1c and 1d and the interlayer connection conductor 8 is large. Yes. Even when one of the three layers of the interlayer connection conductor 8 is not provided, the other two layers of the interlayer connection conductors 8 and 8 are both larger than the opening of the one layer of the interlayer conductor layer 6 and have different sizes. By providing the interlayer connection conductor 8 according to the diameters of the openings, it is possible to prevent the insulating regions 6a, 6b, 6c positioned above and below from overlapping each other when viewed from above.

1つの層間導体層6内の開口およびその内側の層間接続導体8の径は全て同じである必要はない。図3は図1と同様の断面図であり、図2に示す例に対して、上層および下層の層間導体層6には大径および小径の開口および層間接続導体8を縦横に交互に配置しており、上層と下層とでは上面視した大径と小径の配置が逆になっている。このようにすることで、貫通導体4a・4a間の間隔を小さくすることができ、貫通導体4aが高密度に配置された、より小型のX線検出素子搭載用配線基板とすることができる。   The openings in one interlayer conductor layer 6 and the diameters of the interlayer connection conductors 8 inside thereof are not necessarily the same. FIG. 3 is a cross-sectional view similar to FIG. 1. Compared with the example shown in FIG. 2, the upper and lower interlayer conductor layers 6 have large and small diameter openings and interlayer connection conductors 8 alternately arranged vertically and horizontally. In the upper layer and the lower layer, the arrangement of the large diameter and the small diameter in the top view is reversed. By doing in this way, the space | interval between penetration conductor 4a * 4a can be made small, and it can be set as the smaller X-ray detection element mounting wiring board by which the penetration conductor 4a is arrange | positioned at high density.

図2および図3に示す例では、中層および下層の層間導体層6の開口および層間接続導体8の径は、上層の層間導体層6からの距離に比例して順次大きくまたは小さくなっている。このような大きさの関係にあると、上下に位置する複数の絶縁領域6a,6b,6cは、基体1を下面側から斜めに見たときに一直線上に見通せるので、図3に矢印Xで示すように、X線が配線基板の裏面から絶縁領域6c,6b,6aを斜めに直進して侵入してしまう場合がわずかながらある。   In the example shown in FIGS. 2 and 3, the opening of the intermediate and lower interlayer conductor layers 6 and the diameter of the interlayer connection conductor 8 are sequentially increased or decreased in proportion to the distance from the upper interlayer conductor layer 6. With such a size relationship, the plurality of insulating regions 6a, 6b, 6c positioned above and below can be seen in a straight line when the base 1 is viewed obliquely from the lower surface side. As shown, there are a few cases where X-rays enter the insulating regions 6c, 6b, 6a obliquely straight from the back surface of the wiring board.

このようなことから、図4,図5および図6に図1と同様の断面図で示すように、本発明のX線検出素子搭載用配線基板は、上記構成において、層間導体層6,6,6は3つ以上の絶縁層1a・1b,1b・1c,1c・1d間に形成されており、上下に位置する複数の絶縁領域6a,6b,6cは、基体1を下面側から斜めに見たときに一直線上に見通せないことが好ましい。これにより、X線が配線基板の裏面から最下の絶縁領域6cおよびその上の絶縁領域6bを通って斜めに侵入しても、直進するX線は、下の2つの絶縁領域6b,6cより上の絶縁領域6aを通ることはなく、層間導体層6または層間接続導体8により遮蔽されるので、不要なX線の影響をより受けにくくなる。   Therefore, as shown in FIG. 4, FIG. 5 and FIG. 6 in a sectional view similar to FIG. 1, the X-ray detection element mounting wiring board of the present invention has the interlayer conductor layers 6, 6 in the above configuration. , 6 are formed between three or more insulating layers 1 a, 1 b, 1 b, 1 c, 1 c, 1 d, and a plurality of insulating regions 6 a, 6 b, 6 c positioned vertically It is preferable that the line cannot be seen in a straight line when viewed. Thus, even if X-rays enter obliquely from the back surface of the wiring board through the lower insulating region 6c and the insulating region 6b thereabove, the straight X-rays are transmitted from the lower two insulating regions 6b and 6c. Since it does not pass through the upper insulating region 6a and is shielded by the interlayer conductor layer 6 or the interlayer connection conductor 8, it is less susceptible to unnecessary X-rays.

図4に示す例は、図2に示す例に対して、各絶縁領域6a,6b,6cの幅(層間接続導体8と層間絶縁層6との間隔),上層の層間導体層6および層間接続導体8の径,および絶縁層1b,1cの厚みは同じであるが、中層の層間導体層6および層間接続導体8の径は小さく、下層の層間導体層6および層間接続導体8の径は大きいものである。このようにすることで、図4に矢印Xで示すように、X線が配線基板の裏面から最下の絶縁領域6cおよびその上の絶縁領域6bを通って斜めに直進して侵入しても、その上の層間接続導体8により遮蔽される。図4に示す例では、各層間導体層6の開口間の距離を図2に示す例と同じにしているので、下層の層間導体層6および層間接続導体8の径を大きくした分だけ貫通導体4a・4a間の距離も大きくしている。貫通導体4a・4a間の距離を小さくしてX線検出素子搭載用配線基板を小型化したい場合は、図3に示した例のように、上下層の層間導体層6の開口および層間接続導体8を大径と小径とを混在させて配置すればよい。   The example shown in FIG. 4 is different from the example shown in FIG. 2 in the width of each insulating region 6a, 6b, 6c (interval between the interlayer connection conductor 8 and the interlayer insulation layer 6), the upper interlayer conductor layer 6 and the interlayer connection. The diameter of the conductor 8 and the thickness of the insulating layers 1b and 1c are the same, but the diameter of the intermediate interlayer conductor layer 6 and the interlayer connection conductor 8 is small, and the diameter of the lower interlayer conductor layer 6 and the interlayer connection conductor 8 is large. Is. In this way, as indicated by an arrow X in FIG. 4, even if X-rays enter the diagonally straight line from the back surface of the wiring board through the lowermost insulating region 6c and the insulating region 6b thereabove. , And is shielded by the interlayer connection conductor 8 thereon. In the example shown in FIG. 4, the distance between the openings in each interlayer conductor layer 6 is the same as that in the example shown in FIG. 2, so that the through conductors are increased by increasing the diameters of the lower interlayer conductor layer 6 and the interlayer connection conductor 8. The distance between 4a and 4a is also increased. When it is desired to reduce the distance between the through conductors 4a and 4a to reduce the size of the wiring board for mounting the X-ray detection element, the openings of the upper and lower interlayer conductor layers 6 and the interlayer connection conductors as in the example shown in FIG. What is necessary is just to arrange 8 by mixing a large diameter and a small diameter.

また、図5に示す例のようにしてもよい。すなわち、図2に示す例における中層の層間導体層6および層間接続導体8と下層の層間導体層6および間接続導体8とを入れ替えて、中層の層間導体層6の開口および層間接続導体8をその上下の層間導体層6の開口および層間接続導体8より大きくしている。このようにすることで、図5に矢印Xで示すように、X線が配線基板の裏面から最下の絶縁領域6cおよびその上の絶縁領域6bを通って斜めに直進して侵入しても、その上の層間導体層6により遮蔽される。上層と下層とを入れ替えても同様であり、図5に示す例とは逆に、中層の層間導体層6の開口および層間接続導体8をその上下の層間導体層6の開口および層間接続導体8より小さくしてもよい。   Further, the example shown in FIG. 5 may be used. That is, the intermediate interlayer conductor layer 6 and the interlayer connection conductor 8 and the lower interlayer conductor layer 6 and the interlayer connection conductor 8 in the example shown in FIG. It is larger than the opening of the upper and lower interlayer conductor layers 6 and the interlayer connection conductor 8. By doing so, as indicated by an arrow X in FIG. 5, even if X-rays incline from the back surface of the wiring board through the lowermost insulating region 6c and the insulating region 6b thereon obliquely and invade. Are shielded by the interlayer conductor layer 6 thereon. The same applies to the case where the upper layer and the lower layer are interchanged. Contrary to the example shown in FIG. 5, the opening of the middle interlayer conductor layer 6 and the interlayer connecting conductor 8 are replaced with the opening of the upper and lower interlayer conductor layers 6 and the interlayer connecting conductor 8. It may be smaller.

また、図6に示す例のようにしてもよい。すなわち、図2に示す例に対して、上層の層間導体層6と中層の層間導体層6との間の絶縁層1bの厚みを1.5倍にして、中層の層間導体層6と下層の層間導体層6との間の絶縁層1cの厚みを0.5倍にしている。このようにすることで、図6に矢印Xで示すように、X線が配線基板の裏面から最下の絶縁領域6cおよびその上の絶縁領域6bを通って斜めに直進して侵入しても、その上の層間接続導体8により遮蔽される。   Moreover, you may make it like the example shown in FIG. That is, with respect to the example shown in FIG. 2, the thickness of the insulating layer 1b between the upper interlayer conductor layer 6 and the middle interlayer conductor layer 6 is increased by 1.5 times, so that the middle interlayer conductor layer 6 and the lower interlayer conductor are The thickness of the insulating layer 1c between the layers 6 is 0.5 times. By doing so, as indicated by an arrow X in FIG. 6, even if X-rays enter the diagonally straight line from the back surface of the wiring board through the lowermost insulating region 6 c and the insulating region 6 b thereabove. , And is shielded by the interlayer connection conductor 8 thereon.

このように、層間導体層6の開口および層間接続導体8の径を調整したり、層間導体層6間の絶縁層の厚みを調整をしたり、あるいはこれらの調整を組み合わせたりすることにより、上層の層間導体層6の開口および層間接続導体8の径に対してそれより下の層における層間導体層6の開口および層間接続導体8の径が、上層の層間導体層6からの距離に比例して順次大きくまたは小さくならないようにすればよい。   Thus, by adjusting the opening of the interlayer conductor layer 6 and the diameter of the interlayer connection conductor 8, adjusting the thickness of the insulating layer between the interlayer conductor layers 6, or combining these adjustments, the upper layer The opening of the interlayer conductor layer 6 and the diameter of the interlayer connection conductor 8 in the layer below the opening of the interlayer conductor layer 6 and the diameter of the interlayer connection conductor 8 are proportional to the distance from the upper interlayer conductor layer 6. So that it does not become larger or smaller in order.

基体1は、絶縁層1が酸化アルミニウム質焼結体から成る場合であれば、酸化アルミニウム・酸化珪素・酸化マグネシウム・酸化カルシウム等の原料粉末に適当な有機バインダ・溶剤を添加混合してスラリーを作製するとともに、これをドクターブレード法等のシート形成方法によりシート状となして複数枚のセラミックグリーンシートを得て、次に、これらのセラミックグリーンシートに適当な打ち抜き加工を施すとともに上下に積層してセラミックグリーンシート積層体となし、最後にこのセラミックグリーンシート積層体を還元雰囲気中にて約1600℃の温度で焼成することによって製作される。   When the insulating layer 1 is made of an aluminum oxide sintered body, the substrate 1 is prepared by adding a suitable organic binder / solvent to a raw material powder such as aluminum oxide / silicon oxide / magnesium oxide / calcium oxide and mixing the slurry. This is made into a sheet by a sheet forming method such as a doctor blade method to obtain a plurality of ceramic green sheets. Next, these ceramic green sheets are subjected to appropriate punching processing and laminated vertically. The ceramic green sheet laminate is finally manufactured by firing the ceramic green sheet laminate in a reducing atmosphere at a temperature of about 1600 ° C.

接続パッド2,端子電極3,内部配線4,層間導体層6,および層間接続導体8は、基体1と同時焼成により形成される、タングステン(W)、モリブデン(Mo)、銅(Cu)、銀(Ag)等の金属粉末を主成分とするメタライズ導体層から成るものである。同時焼成により形成するために、各導体層は同種の金属粉末を主成分とするのが好ましい。これらが、例えばタングステンメタライズから成る場合であれば、平均粒径が1〜5μm程度のタングステン粉末に適当な有機バインダ・溶剤を、また必要に応じてセラミックスやガラスの粉末を添加混合して得た金属ペーストを絶縁層1となるセラミックグリーンシートにスクリーン印刷法等により印刷塗布しておき、セラミックグリーンシートと同時焼成することにより得られる。内部配線4の内、貫通導体4a,4cは、スクリーン印刷法等により印刷塗布する前に、セラミックグリーンシートに金型やピンによる打ち抜き加工やレーザー加工により予め貫通孔を形成しておき、この貫通孔に金属ペーストを印刷法により充填しておけばよい。   The connection pad 2, the terminal electrode 3, the internal wiring 4, the interlayer conductor layer 6, and the interlayer connection conductor 8 are formed by simultaneous firing with the base 1, tungsten (W), molybdenum (Mo), copper (Cu), silver It consists of a metallized conductor layer whose main component is a metal powder such as (Ag). In order to form by simultaneous baking, it is preferable that each conductor layer has the same kind of metal powder as a main component. If these are made of, for example, tungsten metallization, they are obtained by adding and mixing an appropriate organic binder / solvent with a tungsten powder having an average particle size of about 1 to 5 μm, and, if necessary, ceramic or glass powder. It can be obtained by printing and applying a metal paste on a ceramic green sheet to be the insulating layer 1 by screen printing or the like, and simultaneously firing the ceramic green sheet. Of the internal wiring 4, the through conductors 4 a and 4 c have through holes formed in advance in the ceramic green sheet by punching with a die or a pin or laser processing before being applied by screen printing or the like. The hole may be filled with a metal paste by a printing method.

貫通導体4a,4cの横断面形状は、図1〜図5に示すような円形以外の多角形や楕円形でもよく、同一の絶縁層1内または異なる絶縁層1・1間で貫通導体4a,4cの横断面の形状は同じでもよいし、異なっていてもよい。貫通孔を近接して多数形成すると、貫通孔間のセラミックグリーンシートにクラックが発生しやすくなるので、横断面形状が多角形の場合はクラックの発生しやすい角部の角度が大きい六角形以上の多角形が好ましく、角部を有さない円形や楕円形はクラックが発生しにくく、また金型の偏磨耗も発生しにくいのでより好ましい。   The cross-sectional shape of the through conductors 4a and 4c may be a polygon or an ellipse other than a circle as shown in FIGS. 1 to 5, and the through conductors 4a, 4a, The shape of the cross section of 4c may be the same or different. If a large number of through-holes are formed close to each other, cracks are likely to occur in the ceramic green sheet between the through-holes. Polygons are preferred, and circles and ellipses that do not have corners are more preferred because cracks are less likely to occur and uneven wear of the mold is less likely to occur.

貫通孔を形成する際に同じ金型やピンあるいは加工条件を用いて効率的に製造するためには、同一の絶縁層1a,1b,1c,1d,1eに形成される貫通導体4a,4cの横断面は同じ形状で同じ大きさのものが好ましい。   In order to efficiently manufacture using the same mold, pins or processing conditions when forming the through holes, the through conductors 4a and 4c formed in the same insulating layers 1a, 1b, 1c, 1d and 1e are used. The cross sections are preferably the same shape and the same size.

層間導体層6および層間接続導体8は、タングステン(W),モリブデン(Mo),銅(Cu),銀(Ag)などの金属材料が耐熱性や導電性等の点で好適に使用される。X線の遮蔽効果は、用いる金属材料の原子量に応じて異なり、原子量が大きいほど遮蔽効果が高い。タングステン,モリブデン,銅,銀の原子量は、それぞれ、約184,約96,約64,約108である。なお、裏面からのX線の反射に対しては、原子量が約184のタングステンでは裏面からのX線の反射を遮蔽するには0.05mm厚みがあれば十分であるが、原子量が約64である銅の場合は約3倍の厚みである0.15mmの厚みが必要となるので、1層あたりの層厚みを厚くしたり、層間導体層6の層数を増やす必要がある。基体1にガラスセラミックスを用いる場合は、層間導体層6等に銅よりX線の遮蔽効果の高い銀を用いるとX線検出素子搭載用配線基板を薄型にすることができるので好ましい。   For the interlayer conductor layer 6 and the interlayer connection conductor 8, a metal material such as tungsten (W), molybdenum (Mo), copper (Cu), silver (Ag) is preferably used in terms of heat resistance and conductivity. The X-ray shielding effect varies depending on the atomic weight of the metal material used, and the shielding effect is higher as the atomic weight is larger. The atomic weights of tungsten, molybdenum, copper, and silver are about 184, about 96, about 64, and about 108, respectively. For the reflection of X-rays from the back surface, with a tungsten having an atomic weight of about 184, a thickness of 0.05 mm is sufficient to shield the reflection of X-rays from the back surface, but the atomic weight is about 64. In the case of copper, a thickness of about 0.15 mm, which is about three times the thickness, is required, so it is necessary to increase the layer thickness per layer or increase the number of interlayer conductor layers 6. In the case of using glass ceramics for the substrate 1, it is preferable to use silver having a higher X-ray shielding effect than copper for the interlayer conductor layer 6 and the like because the X-ray detection element mounting wiring board can be made thin.

層間導体層6および層間接続導体8の1層あたりの厚さは、厚くすればするほど層数を少なくすることができ、X線検出素子搭載用配線基板を薄型にすることができるので好ましいが、厚く形成するとセラミックグリーンシートとの段差が大きくなり、セラミックグリーンシートを積層した際に、層間導体層6や層間接続導体8の周囲に隙間ができて焼成時に剥がれたり、外部と連通した空隙となることで水分等が浸入して絶縁不良や内部配線4が腐食してしまったりすることがある。このため、1層の厚さは30μm程度とするのが好ましい。また、グリーンシート上に導体ペーストを印刷して乾燥した後に金型によるプレス加工を施して導体層をグリーンシートに埋没させたり、導体層の周辺にセラミックグリーンシートを作製するためのスラリーと同様のものを印刷することにより段差をなくしたりするとよい。あるいは、導体ペーストを印刷した樹脂フィルム等の基体上にスラリーを塗布することによりセラミックグリーンシートを成形して導体層が埋没したグリーンシートを作製してもよい。   The thickness per layer of the interlayer conductor layer 6 and the interlayer connection conductor 8 is preferable because the number of layers can be reduced as the thickness is increased, and the wiring board for mounting the X-ray detection element can be made thinner. When the ceramic green sheet is laminated, a gap is formed around the interlayer conductor layer 6 and the interlayer connection conductor 8 and peeled off during firing, or a gap communicating with the outside. As a result, moisture or the like may enter and insulation failure or internal wiring 4 may be corroded. Therefore, the thickness of one layer is preferably about 30 μm. Also, after the conductor paste is printed on the green sheet and dried, press working with a mold is performed to embed the conductor layer in the green sheet, or the same slurry as the slurry for producing the ceramic green sheet around the conductor layer It is better to eliminate the step by printing things. Alternatively, a ceramic green sheet may be formed by applying a slurry on a substrate such as a resin film on which a conductor paste is printed to produce a green sheet in which the conductor layer is buried.

層間導体層6は、X線を遮蔽するためのものであるので、その基体1の上面への投影領域が実装領域5aに対応するように形成されている。図1や図2に示す例のように、実装領域5aより一回り大きいベタパターンとすることで、X線検出素子搭載用配線基板の上面に対して斜めに侵入してくるX線を遮蔽することができるので好ましい。また、貫通導体4aと絶縁されるように貫通導体4aや層間接続導体8より一回り大きい開口を有する。貫通導体4aや層間接続導体8と層間導体層6との間の絶縁領域の大きさは、X線を遮蔽するためにはできるだけ小さい方がよいので開口は貫通導体4aや層間接続導体8の横断面形状と相似形とし、絶縁性を考慮すると貫通導体4aや層間接続導体8の外周から約50μm以上の間隔を有するものとするのが好ましい。   Since the interlayer conductor layer 6 is for shielding X-rays, it is formed so that the projection area on the upper surface of the substrate 1 corresponds to the mounting area 5a. As in the example shown in FIGS. 1 and 2, the X-ray entering obliquely with respect to the upper surface of the X-ray detection element mounting wiring board is shielded by forming a solid pattern that is slightly larger than the mounting region 5a. This is preferable. In addition, an opening that is slightly larger than the through conductor 4a and the interlayer connection conductor 8 is provided so as to be insulated from the through conductor 4a. The size of the insulating region between the through conductor 4a or the interlayer connection conductor 8 and the interlayer conductor layer 6 should be as small as possible in order to shield X-rays, so that the opening crosses the through conductor 4a or the interlayer connection conductor 8. It is preferable that the shape is similar to the surface shape and has an interval of about 50 μm or more from the outer periphery of the through conductor 4a and the interlayer connection conductor 8 in consideration of insulation.

層間接続導体8の形状は特に制限はないが、貫通導体4aの横断面形状と相似形に形成するとどの方向に位置ずれしても同程度にカバーできるので好ましい。   The shape of the interlayer connection conductor 8 is not particularly limited, but it is preferable to form the interlayer connection conductor 8 in a shape similar to the cross-sectional shape of the through conductor 4a because it can cover the same extent regardless of the direction of displacement.

なお、基体1の外面に形成された接続パッド2および端子電極3の表面には、酸化腐食を防止するとともに接続パッド2とX線検出素子5の電極との接合および端子電極3と外部回路との接合を容易で強固なものとするために、半田等の接合材7との濡れ性に優れた、厚みが1〜10μm程度のニッケルめっきおよび厚みが0.1μm〜3μm程度の金めっきを電解めっき法や無電解めっき法により順次施すとよい。   Note that the surfaces of the connection pads 2 and the terminal electrodes 3 formed on the outer surface of the substrate 1 prevent oxidation corrosion, and join the connection pads 2 and the electrodes of the X-ray detection element 5 and the terminal electrodes 3 and external circuits. Electrolytic plating with nickel plating with a thickness of about 1 to 10 μm and gold plating with a thickness of about 0.1 μm to 3 μm, with excellent wettability with the bonding material 7 such as solder, etc. It may be applied sequentially by a method or an electroless plating method.

本発明のX線検出装置は、上記のようなX線検出素子搭載用配線基板にX線検出素子5がフリップチップ実装されていることを特徴とするものである。このことから、小型薄型のX線検出素子搭載用配線基板であっても、反射した不要なX線を十分に遮蔽できるので、小型化かつ薄型化できる高画質のX線検出装置となる。   The X-ray detection apparatus of the present invention is characterized in that the X-ray detection element 5 is flip-chip mounted on the wiring board for mounting the X-ray detection element as described above. For this reason, even a small and thin wiring board for mounting an X-ray detection element can sufficiently shield the reflected unnecessary X-rays, resulting in a high-quality X-ray detection apparatus that can be reduced in size and thickness.

X線検出素子5を実装領域5aにフリップチップ実装するには、電極パッド2への接合を周知の方法、例えば半田や導電性樹脂等の接合材7を用いた接合や、X線検出素子5に形成した金バンプ電極を用いた超音波接合により行なえばよい。   In order to flip-chip mount the X-ray detection element 5 on the mounting region 5a, bonding to the electrode pad 2 is performed by a known method, for example, bonding using a bonding material 7 such as solder or conductive resin, or the X-ray detection element 5 What is necessary is just to carry out by ultrasonic bonding using the gold bump electrode formed in this.

またX線検出素子搭載用配線基板と、X線検出素子5とを同じ大きさに形成すると、X線検出装置を縦横に隙間なく配列することで、X線検出素子5が二次元的に隙間無く配列されることとなるので、1個のX線検出素子5の解像度の制限を受けずに高解像度の検出ができるものとすることができる。   In addition, when the X-ray detection element mounting wiring board and the X-ray detection element 5 are formed in the same size, the X-ray detection elements 5 are two-dimensionally spaced by arranging the X-ray detection devices vertically and horizontally. Therefore, it is possible to perform high-resolution detection without being limited by the resolution of one X-ray detection element 5.

(a)は本発明のX線検出素子搭載用配線基板の実施の形態の一例を示す断面図であり、(b)は(a)におけるA部を上面視した断面図である。(A) is sectional drawing which shows an example of embodiment of the wiring board for X-ray detection element mounting of this invention, (b) is sectional drawing which looked at the A section in (a) from the top. (a)は本発明のX線検出素子搭載用配線基板の実施の形態の一例を示す断面図であり、(b)は(a)におけるA部を上面視した断面図である。(A) is sectional drawing which shows an example of embodiment of the wiring board for X-ray detection element mounting of this invention, (b) is sectional drawing which looked at the A section in (a) from the top. (a)は本発明のX線検出素子搭載用配線基板の実施の形態の一例を示す断面図であり、(b)は(a)におけるA部を上面視した断面図である。(A) is sectional drawing which shows an example of embodiment of the wiring board for X-ray detection element mounting of this invention, (b) is sectional drawing which looked at the A section in (a) from the top. (a)は本発明のX線検出素子搭載用配線基板の実施の形態の一例を示す断面図であり、(b)は(a)におけるA部を上面視した断面図である。(A) is sectional drawing which shows an example of embodiment of the wiring board for X-ray detection element mounting of this invention, (b) is sectional drawing which looked at the A section in (a) from the top. (a)は本発明のX線検出素子搭載用配線基板の実施の形態の一例を示す断面図であり、(b)は(a)におけるA部を上面視した断面図である。(A) is sectional drawing which shows an example of embodiment of the wiring board for X-ray detection element mounting of this invention, (b) is sectional drawing which looked at the A section in (a) from the top. (a)は本発明のX線検出素子搭載用配線基板の実施の形態の一例を示す断面図であり、(b)は(a)におけるA部を上面視した断面図である。(A) is sectional drawing which shows an example of embodiment of the wiring board for X-ray detection element mounting of this invention, (b) is sectional drawing which looked at the A section in (a) from the top. 従来のX線検出素子搭載用配線基板の実施の形態の一例を示す断面図である。It is sectional drawing which shows an example of embodiment of the conventional wiring board for X-ray detection element mounting.

符号の説明Explanation of symbols

1:絶縁層
1a:基体
2:接続パッド
3:端子電極
4:内部配線
4a:貫通導体
5:X線検出素子
5a:実装領域
6:層間導体層
6a:開口
7:接合材
8:層間接続導体
1: Insulating layer 1a: Substrate 2: Connection pad 3: Terminal electrode 4: Internal wiring 4a: Through conductor 5: X-ray detection element 5a: Mounting area 6: Interlayer conductor layer 6a: Opening 7: Bonding material 8: Interlayer connection conductor

Claims (3)

複数の絶縁層が積層されてなる基体と、該基体の上面のX線検出素子の実装領域に形成された前記X線検出素子をフリップチップ実装するための複数の接続パッドと、前記基体の外面に形成された複数の端子電極と、前記基体の内部に形成され、前記実装領域の下方に配置された複数の貫通導体を含む、前記複数の接続パッドと前記複数の端子電極とを接続する複数の内部配線とを有するX線検出素子搭載用配線基板であって、前記複数の貫通導体に対応する開口を有する複数層の層間導体層が、前記基体の前記上面への投影領域に前記実装領域が含まれるように前記絶縁層間に形成され、前記複数の貫通導体は、前記開口内で前記層間導体層との間に絶縁領域を設けて前記層間導体層を貫通するとともに、前記層間導体層が形成された前記絶縁層間のうち少なくとも1つにおいて前記開口内で前記層間導体層との間に前記絶縁領域を設けて形成された、前記貫通導体の横断面より大きい層間接続導体を間に介して接続されており、少なくとも1つの前記絶縁領域は、上面視して他の前記絶縁領域と重ならないことを特徴とするX線検出素子搭載用配線基板。 A base body in which a plurality of insulating layers are stacked, a plurality of connection pads for flip-chip mounting the X-ray detection element formed in the X-ray detection element mounting region on the upper surface of the base body, and an outer surface of the base body A plurality of terminal electrodes formed in the substrate and a plurality of through conductors formed inside the base and disposed below the mounting region, the plurality of connection pads and the plurality of terminal electrodes being connected to each other A plurality of interlayer conductor layers having openings corresponding to the plurality of through conductors in the projection area on the upper surface of the base body. The plurality of through conductors pass through the interlayer conductor layer by providing an insulating region between the plurality of through conductors and the interlayer conductor layer in the opening. Formed said In at least one of the edge layers, the insulating region is provided between the interlayer conductor layers in the opening and is connected via an interlayer connection conductor larger than the cross section of the through conductor. The X-ray detecting element mounting wiring board, wherein at least one of the insulating regions does not overlap with the other insulating regions when viewed from above. 前記層間導体層は3つ以上の絶縁層間に形成されており、上下に位置する複数の前記絶縁領域は、前記基体を下面側から斜めに見たときに一直線上に見通せないことを特徴とする請求項1記載のX線検出素子搭載用配線基板。 The interlayer conductor layer is formed between three or more insulating layers, and the plurality of insulating regions positioned above and below cannot be seen in a straight line when the base is viewed obliquely from the lower surface side. The wiring board for mounting an X-ray detection element according to claim 1. 請求項1または請求項2のいずれかに記載のX線検出素子搭載用配線基板にX線検出素子がフリップチップ実装されていることを特徴とするX線検出装置。 An X-ray detection apparatus, wherein the X-ray detection element is flip-chip mounted on the wiring board for mounting the X-ray detection element according to claim 1.
JP2007244925A 2007-09-21 2007-09-21 X-ray detector mounting circuit board and X-ray detector Expired - Fee Related JP4722104B2 (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102870006A (en) * 2010-04-15 2013-01-09 浜松光子学株式会社 Connection substrate
WO2016167830A1 (en) * 2015-04-14 2016-10-20 Analogic Corporation Detector array for radiation system
US11740367B2 (en) 2022-01-07 2023-08-29 Analogic Corporation Radiation detectors for scanning systems, and related scanning systems

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001094139A (en) * 1999-09-24 2001-04-06 Kyocera Corp Wiring board for mounting x-ray detecting element
JP2002214352A (en) * 2001-01-19 2002-07-31 Canon Inc Radiation imaging device
JP2004071638A (en) * 2002-08-01 2004-03-04 Canon Inc Radiation imaging apparatus and radiation imaging system using same
JP2004219318A (en) * 2003-01-16 2004-08-05 Hamamatsu Photonics Kk Radiation detector
JP2004265883A (en) * 2003-01-08 2004-09-24 Hamamatsu Photonics Kk Wiring board and radiation detector employing it
JP2005043330A (en) * 2003-07-25 2005-02-17 Morita Mfg Co Ltd X-ray image detector
JP2005539232A (en) * 2002-09-18 2005-12-22 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ X-ray detector having a plurality of detector units

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001094139A (en) * 1999-09-24 2001-04-06 Kyocera Corp Wiring board for mounting x-ray detecting element
JP2002214352A (en) * 2001-01-19 2002-07-31 Canon Inc Radiation imaging device
JP2004071638A (en) * 2002-08-01 2004-03-04 Canon Inc Radiation imaging apparatus and radiation imaging system using same
JP2005539232A (en) * 2002-09-18 2005-12-22 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ X-ray detector having a plurality of detector units
JP2004265883A (en) * 2003-01-08 2004-09-24 Hamamatsu Photonics Kk Wiring board and radiation detector employing it
JP2004219318A (en) * 2003-01-16 2004-08-05 Hamamatsu Photonics Kk Radiation detector
JP2005043330A (en) * 2003-07-25 2005-02-17 Morita Mfg Co Ltd X-ray image detector

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102870006A (en) * 2010-04-15 2013-01-09 浜松光子学株式会社 Connection substrate
EP2560027A1 (en) * 2010-04-15 2013-02-20 Hamamatsu Photonics K.K. Connection substrate
EP2560027A4 (en) * 2010-04-15 2013-11-20 Hamamatsu Photonics Kk Connection substrate
US9000388B2 (en) 2010-04-15 2015-04-07 Hamamatsu Photonics K. K. Connection substrate
WO2016167830A1 (en) * 2015-04-14 2016-10-20 Analogic Corporation Detector array for radiation system
US10254421B2 (en) 2015-04-14 2019-04-09 Analogic Corporation Detector array for radiation system
US10802166B2 (en) 2015-04-14 2020-10-13 Analogic Corporation Detector array for a radiation system, and related system
US11275187B2 (en) 2015-04-14 2022-03-15 Analogic Corporation Detector array for a radiation system, and related system
US11740367B2 (en) 2022-01-07 2023-08-29 Analogic Corporation Radiation detectors for scanning systems, and related scanning systems

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