JP2009054835A - Semiconductor device and its manufacturing method - Google Patents

Semiconductor device and its manufacturing method Download PDF

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JP2009054835A
JP2009054835A JP2007220887A JP2007220887A JP2009054835A JP 2009054835 A JP2009054835 A JP 2009054835A JP 2007220887 A JP2007220887 A JP 2007220887A JP 2007220887 A JP2007220887 A JP 2007220887A JP 2009054835 A JP2009054835 A JP 2009054835A
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slope
electrode
insulating film
wiring
groove
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JP4940063B2 (en
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Keiji Sugi
啓 司 杉
Kenichi Mori
健 一 森
Hiroko Nomura
村 裕 子 野
Takashi Miyazaki
崎 崇 宮
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Toshiba Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To allow the shape of a liquid material ejected onto a slope to be controlled even when a wire is formed on the slope by using a liquid ejection method. <P>SOLUTION: A semiconductor device comprises: a first electrode 2 formed on a substrate 1; an insulation film 3 that is formed to cover the substrate and has an opening 4 to expose at least a portion of the first electrode; an electronic device 5 that is provided on the insulation film and has a second electrode on the top surface thereof; a slope 9 that bridges the level difference between the top surface of the insulation film and that of the electronic device; a groove 10 that is formed in the insulation film in the vicinity of the outer circumference of the slope; and a wire 11 that is formed on the slope and connects the first and second electrodes. The groove is formed so that, when a point at which the wire running down the slope makes first contact with the insulation film is assumed to be the center, the distance from the electronic device increases to the maximum and then decreases with increasing distance from the first contact point in a direction substantially orthogonal to the wire extending direction. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、半導体装置およびその製造方法に関する。   The present invention relates to a semiconductor device and a manufacturing method thereof.

近年、電子部品の小型化、高密度化に伴って、例えば電子デバイスを薄く製作し、これを実装することによって電子部品を高密度化することが望まれている。電子デバイスの実装において電気的に配線接続する方法としてワイヤボンディングを用いる方法が知られている。このワイヤボンディングは、実装する電子デバイスに対して加熱及び加圧処理が必要となり、薄い電子デバイスでは加圧による破損が問題となる。   In recent years, with the miniaturization and high density of electronic components, it has been desired to increase the density of electronic components by, for example, manufacturing a thin electronic device and mounting it. A method using wire bonding is known as a method of electrically connecting wiring in mounting an electronic device. This wire bonding requires heating and pressure treatment for the electronic device to be mounted, and damage due to pressure is a problem for thin electronic devices.

そこで、加圧工程が不要な配線接続技術として、導電材料を液滴吐出法で吐出することで配線を形成する技術が知られている（例えば、特許文献１参照）。液滴吐出法に基づいて配線を形成する場合、吐出した液体材料が所望位置より流出すると、ショートや断線等の不都合が発生する可能性がある。そのため、電子デバイスを実装する際に液滴吐出法を用いる場合、吐出した液体材料の流出を防止し、吐出した液体材料の形状を制御することが重要である。   Therefore, as a wiring connection technique that does not require a pressurizing process, a technique for forming a wiring by discharging a conductive material by a droplet discharge method is known (for example, see Patent Document 1). When the wiring is formed based on the droplet discharge method, if the discharged liquid material flows out from a desired position, there is a possibility that inconveniences such as a short circuit or a disconnection may occur. Therefore, when using the droplet discharge method when mounting an electronic device, it is important to prevent the discharged liquid material from flowing out and to control the shape of the discharged liquid material.

吐出した液体材料の流出を防止する方法として、例えば接続端子の周囲に、フォトリソグラフィ法を用いて壁部を形成する方法が知られている（特許文献２参照）。   As a method for preventing the discharged liquid material from flowing out, for example, a method of forming a wall portion around a connection terminal using a photolithography method is known (see Patent Document 2).

しかし、段差を埋めるように設けられたスロープ上に配線が形成される半導体装置においては、配線を形成する際に上記スロープ上に壁部を形成するのが困難である。   However, in a semiconductor device in which a wiring is formed on a slope provided so as to fill a step, it is difficult to form a wall portion on the slope when forming the wiring.

また、壁部を形成しないで、液滴吐出法により上記スロープに配線を形成した方法が知られているが（例えば、特許文献３参照）、吐出した液体材料の流出を防止し、吐出した液体材料の形状を制御することが困難である。
特開２０００−２１６３３０号公報 特開２００６−３０２９８９号公報 特開２００６−１６５５０６号公報 In addition, a method is known in which a wiring is formed on the slope by a droplet discharge method without forming a wall portion (see, for example, Patent Document 3). It is difficult to control the shape of the material.
JP 2000-216330 A JP 2006-302989 A JP 2006-165506 A

上述したように、段差を埋めるように形成されるスロープ上に液滴吐出法により配線を形成する場合には、吐出した液体材料の流出を防止し、スロープに吐出された液体材料の形状を制御することが困難であるという課題がある。   As described above, when wiring is formed on the slope formed so as to fill the step by the droplet discharge method, the discharge of the discharged liquid material is prevented and the shape of the liquid material discharged to the slope is controlled. There is a problem that it is difficult to do.

本発明は上記事情を考慮してなされたものであって、液滴吐出法を用いて、スロープ上に配線を形成しても、スロープに吐出された液体材料の形状を制御することのできる半導体装置およびその製造方法を提供することを目的とする。   The present invention has been made in consideration of the above circumstances, and a semiconductor capable of controlling the shape of a liquid material discharged onto a slope even when a wiring is formed on the slope by using a droplet discharge method. An object is to provide an apparatus and a method for manufacturing the same.

本発明の第１の態様による半導体装置は、基板上に形成された第１電極と、前記基板を覆うように形成され前記第１電極の少なくとも一部を露出させる開口を有する絶縁膜と、前記絶縁膜の上に設けられ、上面に第２電極を有する電子デバイスと、前記絶縁膜の上面と前記電子デバイスの上面との段差を埋めるスロープと、前記スロープの外周近傍の前記絶縁膜に設けられた溝と、前記スロープ上に形成され前記第１電極と前記第２電極を接続する配線と、を備え、前記溝は、前記配線が前記スロープを伝って前記絶縁膜と最初に接する点を中心として、前記最初に接する点から前記配線が延在する方向と略直交する方向に遠ざかるにつれて、前記電子デバイスとの距離が増加して最大となりその後減少するように形成されていることを特徴とする。   A semiconductor device according to a first aspect of the present invention includes a first electrode formed on a substrate, an insulating film formed to cover the substrate and having an opening exposing at least a part of the first electrode, An electronic device having a second electrode on an upper surface provided on the insulating film, a slope filling a step between the upper surface of the insulating film and the upper surface of the electronic device, and provided on the insulating film in the vicinity of the outer periphery of the slope And a wiring formed on the slope and connecting the first electrode and the second electrode, wherein the groove is centered on a point where the wiring first contacts the insulating film along the slope. As the distance from the first contact point in a direction substantially perpendicular to the direction in which the wiring extends, the distance from the electronic device increases and becomes maximum, and then decreases. To.

また、本発明の第２の態様による半導体装置の製造方法は、第１電極が形成された基板上に絶縁膜を形成する工程と、前記絶縁膜に、前記第１電極に通じる開口と、前記第１電極に接続する配線が形成される領域の両側にそれぞれ溝とを形成する工程と、前記絶縁膜の、前記溝からみて前記開口とは反対側の領域上に、上面に第２電極を有する電子デバイスを設ける工程と、前記絶縁膜と前記電子デバイスの上面との段差を埋め、前記電子デバイスの上面から前記溝に向かって傾斜したスロープを形成する工程と、前記スロープ上に、前記第１電極と前記第２電極と接続する前記配線を液適吐出法により形成する工程と、を備え、前記溝は、前記配線が前記スロープを伝って前記絶縁膜と最初に接する点を中心として、前記最初に接する点から前記配線が延在する方向と略直交する方向に遠ざかるにつれて、前記電子デバイスとの距離が増加して最大となりその後減少するように形成されていることを特徴とする。   According to a second aspect of the present invention, there is provided a method for manufacturing a semiconductor device, comprising: forming an insulating film on a substrate on which a first electrode is formed; opening an opening in the insulating film to the first electrode; Forming a groove on each side of a region where a wiring connected to the first electrode is formed; and forming a second electrode on the upper surface of the insulating film on a region opposite to the opening as viewed from the groove. A step of providing an electronic device, a step of filling a step between the insulating film and the upper surface of the electronic device, forming a slope inclined from the upper surface of the electronic device toward the groove, and the step on the slope. Forming the wiring connected to one electrode and the second electrode by an appropriate liquid discharge method, and the groove is centered on a point where the wiring first contacts the insulating film along the slope. The first contact point As the distance in a direction in which the wiring is substantially orthogonal to the direction that extends, characterized in that the distance between the electronic device is formed so as to reduce subsequent maximized to increase.

本発明によれば、液滴吐出法を用いて、スロープ上に配線を形成しても、スロープに吐出された液体材料の形状を制御することができる。   According to the present invention, the shape of the liquid material discharged onto the slope can be controlled even when the wiring is formed on the slope using the droplet discharge method.

本発明の実施形態を、図面を参照して詳細に説明する。   Embodiments of the present invention will be described in detail with reference to the drawings.

（第１実施形態）
本発明の第１実施形態による半導体装置を図１乃至図３に示す。本実施形態の半導体装置の上面図を図１に示し、図１に示す切断線Ａ−Ａで切断した断面図を図２に示し、図１に示す切断線ａ−ａ、ｂ−ｂ、ｃ−ｃ、ｄ−ｄ、ｅ−ｅ、ｆ−ｆ、ｇ−ｇで切断した断面図をそれぞれ図３（ａ）、（ｂ）、（ｃ）、（ｄ）、（ｅ）、（ｆ）、（ｇ）に示す。 (First embodiment)
A semiconductor device according to a first embodiment of the present invention is shown in FIGS. FIG. 1 shows a top view of the semiconductor device of this embodiment, FIG. 2 shows a cross-sectional view taken along the cutting line AA shown in FIG. 1, and shows the cutting lines aa, bb, c shown in FIG. -C, dd, ee, ff, and g-g are cross-sectional views shown in FIGS. 3 (a), (b), (c), (d), (e), and (f), respectively. (G).

本実施形態の半導体装置は、図２に示すように、上面に電極２が形成された電子デバイス１を有している。この電子デバイス１を覆うように絶縁膜３が設けられ、この絶縁膜３には電極２に通じる開口４が設けられている。この絶縁膜３は、電子デバイス１の内部に水分（湿気）が侵入することを防止する保護膜（パッシべーション膜）として機能している。   As shown in FIG. 2, the semiconductor device of this embodiment includes an electronic device 1 having an electrode 2 formed on the upper surface. An insulating film 3 is provided so as to cover the electronic device 1, and an opening 4 leading to the electrode 2 is provided in the insulating film 3. The insulating film 3 functions as a protective film (passivation film) that prevents moisture (humidity) from entering the electronic device 1.

電極２が設けられた領域と異なる電子デバイス１の領域上には絶縁膜３を介して、上面に電極６が形成された電子デバイス５が設けられている。この電子デバイス５の上面を覆うように絶縁膜７が設けられ、この絶縁膜７には電極６に通じる開口８が設けられている。   On the area of the electronic device 1 different from the area where the electrode 2 is provided, an electronic device 5 having an electrode 6 formed on the upper surface is provided via an insulating film 3. An insulating film 7 is provided so as to cover the upper surface of the electronic device 5, and an opening 8 leading to the electrode 6 is provided in the insulating film 7.

この絶縁膜７は、電子デバイス５の内部に水分（湿気）が侵入することを防止する保護膜（パッシべーション膜）として機能している。 The insulating film 7 functions as a protective film (passivation film) that prevents moisture (humidity) from entering the electronic device 5.

そして、電子デバイス５の電極６と、電子デバイス１の電極２とを配線で接続するために段差を埋めるように形成されたスロープ９が絶縁膜３上に設けられている。このスロープ９は電子デバイス５が設けられた領域と、開口４が設けられた領域との間の絶縁膜３上に形成されている。このスロープ９の、絶縁膜３に接する外周に沿って絶縁膜３に溝１０が設けられている。そして、電子デバイス５の電極６と、電子デバイス１の電極２とを接続する配線１１がスロープ９上に設けられている。   A slope 9 is formed on the insulating film 3 so as to fill a step in order to connect the electrode 6 of the electronic device 5 and the electrode 2 of the electronic device 1 with wiring. The slope 9 is formed on the insulating film 3 between the region where the electronic device 5 is provided and the region where the opening 4 is provided. A groove 10 is provided in the insulating film 3 along the outer periphery of the slope 9 in contact with the insulating film 3. A wiring 11 that connects the electrode 6 of the electronic device 5 and the electrode 2 of the electronic device 1 is provided on the slope 9.

スロープ９の外周に沿って設けられた溝１０は、図１に示すように、配線１１がスロープ９を伝って絶縁膜３と最初に接する点（スロープの下端）を谷として、配線１１の両側にそれぞれ平面形状が山となる溝となっている。すなわち、溝１０は、配線１１がスロープ９を伝って絶縁膜３と最初に接する点を中心として、上記最初に接する点から配線１１が延在する方向と略直交する方向に遠ざかるにつれて、電子デバイス１との距離が増加して最大となりその後減少するように形成されている。このような構成の溝１０とすることにより、溝１０が絶縁膜３に形成された後に、例えば、エポキシ樹脂からなるスロープ９を例えばディスペンサー法等により形成すると、図３（ａ）乃至３（ｇ）に示すように、スロープ９は、絶縁膜７から絶縁膜３に至るまでに断面形状が平坦から段々と２つの山形状となるように変化する構成となる。このため、配線１１は、スロープ９の２つの山の間の谷の部分に形成される。これらの２つの山が壁となって、液適吐出法で配線１１を形成する場合には、上記２つの山が壁となって、液体材料が配線１１の形成方向（延在する方向）と直交する方向に広がるのを抑制することができ、スロープに吐出された液体材料の形状を制御することができる。   As shown in FIG. 1, the groove 10 provided along the outer periphery of the slope 9 is formed on both sides of the wiring 11 with the point (lower end of the slope) where the wiring 11 first contacts the insulating film 3 along the slope 9 as a valley. Each of the flat shapes is a groove having a mountain. That is, as the groove 10 moves away from the first contact point in the direction substantially perpendicular to the direction in which the wiring 11 extends, the wiring device 11 is centered on the point where the wiring 11 travels along the slope 9 first. It is formed so that the distance from 1 increases and becomes the maximum and then decreases. With the groove 10 having such a configuration, after the groove 10 is formed in the insulating film 3, for example, when the slope 9 made of an epoxy resin is formed by, for example, a dispenser method or the like, FIGS. ), The slope 9 has a configuration in which the cross-sectional shape changes from flat to two ridges from the insulating film 7 to the insulating film 3. For this reason, the wiring 11 is formed in a valley portion between two peaks of the slope 9. When these two crests become walls and the wiring 11 is formed by the liquid proper discharge method, the two crests become walls and the liquid material is formed in the direction in which the wiring 11 is formed (extending direction). Spreading in the orthogonal direction can be suppressed, and the shape of the liquid material discharged onto the slope can be controlled.

次に、本実施形態の半導体装置の製造方法を、図２を参照して説明する。   Next, a method for manufacturing the semiconductor device of this embodiment will be described with reference to FIG.

まず、上面に電極２が設けられている電子デバイス１を覆うように、絶縁膜３を形成する。この絶縁膜３は、例えばポリイミド樹脂等の絶縁性材料をスピンコート法、ディッピング法、または液滴吐出法などで形成することができる。または、酸化珪素（ＳｉＯ２）、窒化珪素（ＳｉＮ）、アルミナ（Ａｌ２Ｏ３）などの絶縁性材料をスパッタ蒸着法などで形成してもよい。 First, the insulating film 3 is formed so as to cover the electronic device 1 on which the electrode 2 is provided on the upper surface. The insulating film 3 can be formed of an insulating material such as polyimide resin by a spin coating method, a dipping method, a droplet discharge method, or the like. Alternatively, an insulating material such as silicon oxide (SiO 2 ), silicon nitride (SiN), or alumina (Al 2 O 3 ) may be formed by a sputtering deposition method or the like.

続いて、電子デバイス５上に絶縁膜７を形成する。この絶縁膜７は、例えばポリイミド樹脂等の絶縁性材料をスピンコート、ディッピング法、液滴吐出法などで形成することができる。または、酸化珪素（ＳｉＯ２）、窒化珪素（ＳｉＮ）、アルミナ（Ａｌ２Ｏ３）などの絶縁性材料をスパッタ蒸着法などで形成してもよい。その後、絶縁膜７が形成された電子デバイス５を、電子デバイス１上の絶縁膜３と貼り合わせる。このとき、電子デバイス５は例えば粘着材シートなどを用いて貼り付けてもよい。 Subsequently, an insulating film 7 is formed on the electronic device 5. The insulating film 7 can be formed of, for example, an insulating material such as polyimide resin by spin coating, dipping method, droplet discharge method or the like. Alternatively, an insulating material such as silicon oxide (SiO 2 ), silicon nitride (SiN), or alumina (Al 2 O 3 ) may be formed by a sputtering deposition method or the like. Thereafter, the electronic device 5 on which the insulating film 7 is formed is bonded to the insulating film 3 on the electronic device 1. At this time, the electronic device 5 may be attached using, for example, an adhesive sheet.

次に、フォトリソグラフィ技術を用いて絶縁膜３に、電極２に通じる開口４とスロープ９の形状を決定する溝１０とを形成する。続いて、フォトリソグラフィ技術を用いて絶縁膜７に、電子デバイス５の電極６に通じる開口８を形成する。   Next, an opening 4 leading to the electrode 2 and a groove 10 for determining the shape of the slope 9 are formed in the insulating film 3 by using a photolithography technique. Subsequently, an opening 8 leading to the electrode 6 of the electronic device 5 is formed in the insulating film 7 using a photolithography technique.

次に、絶縁膜３の上面と電子デバイス５の上面の段差を埋めるようにスロープ９を形成する。スロープ９は例えばエポキシ樹脂などを、例えばインクジェット装置、スクリーン印刷装置、ディスペンサー装置などで形成することができる。スロープ９の形状は、材料の量、粘度、およびスロープの勾配などに依存して決まる。スロープ９を構成するエポキシ樹脂等は、さらに溝部１０の端で止めることができるため、溝部１０の形状によってスロープ９の形状を制御することができる。   Next, a slope 9 is formed so as to fill a step between the upper surface of the insulating film 3 and the upper surface of the electronic device 5. The slope 9 can be formed of, for example, an epoxy resin, for example, using an inkjet device, a screen printing device, a dispenser device, or the like. The shape of the slope 9 is determined depending on the amount of material, the viscosity, the slope of the slope, and the like. Since the epoxy resin or the like constituting the slope 9 can be further stopped at the end of the groove 10, the shape of the slope 9 can be controlled by the shape of the groove 10.

その後、液適吐出法を用いて、電極６と電極２とを接続する配線１１を形成する。配線部１１にはＡｇ、Ｃｕ、Ａｕ、Ｔｉ、Ａｌ、Ｎｉなどを溶媒に分散させたインク、ＰＥＤＯＴ：ＰＳＳなどのような有機導電性材料が使用できる。液適吐出法は、インクジェット装置、スクリーン印刷装置、ディスペンサー装置などを用いて行うことができる。配線１１の一部はスロープ９上に設けられており、スロープ９によって電子デバイス１の上面と、電子デバイス５の上面との間において大きな段差が無くなっている。段差を無くすことにより、電子デバイス１上に設けられた電極２と、電子デバイス５上に設けられた電極６とを電気的に接続するための配線１１の曲げによる切断などの不都合が防止されている。さらに、配線１１の形状はスロープ９の形状によって制御される。例えば、本実施形態では、溝１０のパターンは配線１１の両側に配線１１がスロープ９を伝って絶縁膜３と最初に接する点（スロープの下端）を谷として、配線１１の両側にそれぞれ平面形状が山となる構成となっている。このため、スロープ９は、絶縁膜７から絶縁膜３に至るまでに断面形状が平坦から段々と２つの山形状となるように変化する構成となり、スロープ９の２つの山の間の谷の部分に配線１１が形成される。これらの２つの山が壁となって、液適吐出法で配線１１を形成する場合には、上記２つの山が壁となって、液体材料が配線１１の形成方向（延在する方向）と直交する方向に広がるのを抑制することができる。すなわち、配線１１が最も断線しやすいスロープ９の下端付近で配線の形成方向に垂直な方向への、吐出された液体材料の広がりが抑えられる。これにより、この下端付近で配線１１の膜厚が厚くなるように制御することができ、断線を防止することができる。また、スロープ９の下端付近で配線の形成方向に垂直な方向への広がりが抑えられるので、隣接配線とのショートを防止することができる。   Then, the wiring 11 which connects the electrode 6 and the electrode 2 is formed using a liquid suitable discharge method. The wiring portion 11 can be made of an ink in which Ag, Cu, Au, Ti, Al, Ni, or the like is dispersed in a solvent, or an organic conductive material such as PEDOT: PSS. The appropriate liquid discharge method can be performed using an inkjet device, a screen printing device, a dispenser device, or the like. A part of the wiring 11 is provided on the slope 9, and the slope 9 eliminates a large step between the upper surface of the electronic device 1 and the upper surface of the electronic device 5. By eliminating the step, inconveniences such as cutting due to bending of the wiring 11 for electrically connecting the electrode 2 provided on the electronic device 1 and the electrode 6 provided on the electronic device 5 are prevented. Yes. Further, the shape of the wiring 11 is controlled by the shape of the slope 9. For example, in the present embodiment, the pattern of the groove 10 has a planar shape on both sides of the wiring 11, with the point (lower end of the slope) where the wiring 11 first contacts the insulating film 3 along the slope 9 on both sides of the wiring 11. Has become a mountain. Therefore, the slope 9 has a configuration in which the cross-sectional shape changes from flat to two mountain shapes from the insulating film 7 to the insulating film 3, and the valley portion between the two peaks of the slope 9. A wiring 11 is formed on the substrate. When these two crests become walls and the wiring 11 is formed by the liquid proper discharge method, the two crests become walls and the liquid material is formed in the direction in which the wiring 11 is formed (extending direction). Spreading in the orthogonal direction can be suppressed. That is, the spread of the discharged liquid material in the direction perpendicular to the wiring formation direction is suppressed near the lower end of the slope 9 where the wiring 11 is most likely to be disconnected. Thereby, it can control so that the film thickness of the wiring 11 may become thick near this lower end, and a disconnection can be prevented. Moreover, since the spread in the direction perpendicular to the wiring formation direction is suppressed near the lower end of the slope 9, a short circuit with the adjacent wiring can be prevented.

なお、本実施形態においては、スロープ９は溝１０を覆ってはいないが、図４に示すように、スロープ９が溝１０を覆っていてもよい。スロープ９を形成する際、スロープ９の形成材料の粘度や濡れ性等により、形成材料が溝１０内に入り込みことがある。いずれにしても、この溝１０によって、スロープ９の形成材料が広がるのを防止することができる。   In the present embodiment, the slope 9 does not cover the groove 10, but the slope 9 may cover the groove 10 as shown in FIG. When forming the slope 9, the forming material may enter the groove 10 due to the viscosity or wettability of the forming material of the slope 9. In any case, the groove 10 can prevent the forming material of the slope 9 from spreading.

また、本実施形態および以降の実施形態においては、電子デバイス１は、特に機能を持たない単なる基板であってもよい。   Further, in the present embodiment and the following embodiments, the electronic device 1 may be a simple substrate having no particular function.

（第２実施形態）
次に、本発明の第２実施形態による半導体装置を、図５を参照して説明する。図５は、本実施形態の半導体装置の、配線の形成方向に沿った平面で切断した断面図である。 (Second Embodiment)
Next, a semiconductor device according to a second embodiment of the present invention will be described with reference to FIG. FIG. 5 is a cross-sectional view of the semiconductor device of this embodiment, taken along a plane along the wiring formation direction.

本実施形態の半導体装置は、図２に示す第１実施形態の半導体装置において、溝１０が電子デバイス５の端面近傍まで広がって形成された構成となっている。すなわち、スロープ９は溝１０上に形成された構成となっている。本実施形態も第１実施形態と同様の効果を有することはいうまでもない。   The semiconductor device of this embodiment has a configuration in which the groove 10 is formed so as to extend to the vicinity of the end face of the electronic device 5 in the semiconductor device of the first embodiment shown in FIG. That is, the slope 9 is formed on the groove 10. It goes without saying that the present embodiment also has the same effect as the first embodiment.

図２に示す第１実施形態のように溝１０の手前でスロープを止めると、溝１０に沿って配線１１が横に流れる場合があり得る。濡れ性等を調整することによって図４に示すように、溝１０の外側でスロープを止めることもできるが、本実施形態では、簡単に溝１０の外側でスロープを止めることができる。   When the slope is stopped before the groove 10 as in the first embodiment shown in FIG. 2, the wiring 11 may flow laterally along the groove 10. By adjusting the wettability and the like, as shown in FIG. 4, the slope can be stopped outside the groove 10, but in this embodiment, the slope can be easily stopped outside the groove 10.

（第３実施形態）
次に、本発明の第３実施形態による半導体装置を図６および図７を参照して説明する。図６は本実施形態の半導体装置の上面図、図７は、図６に示す切断線Ａ−Ａで切断した断面図である。本実施形態の半導体装置は、図２に示す第１実施形態の半導体装置と同様に
スロープ９の外周の絶縁膜３に溝１０１を設けるとともに、配線１１の下部領域にも溝１０２を設けた構成となっている。本実施形態も第１実施形態と同様の効果を有することはいうまでもない。 (Third embodiment)
Next, a semiconductor device according to a third embodiment of the present invention will be described with reference to FIGS. 6 is a top view of the semiconductor device of the present embodiment, and FIG. 7 is a cross-sectional view taken along the cutting line AA shown in FIG. The semiconductor device of this embodiment, provided with a groove 10 1 to the insulating film 3 of the outer periphery of the semiconductor device similarly to the slope 9 of the first embodiment shown in FIG. 2, the groove 10 2 is provided in the lower region of the wiring 11 It becomes the composition. It goes without saying that the present embodiment also has the same effect as the first embodiment.

図２に示す第１実施形態では、スロープの凹凸は、主にスロープの下端近傍に形成される。これに対して本実施形態では、図６に示すようにスロープ上端近傍にも凹凸を形成することができ、歩留まりの向上が期待できる。   In the first embodiment shown in FIG. 2, the unevenness of the slope is mainly formed near the lower end of the slope. On the other hand, in this embodiment, as shown in FIG. 6, unevenness can also be formed in the vicinity of the upper end of the slope, and an improvement in yield can be expected.

（第４実施形態）
次に、本発明の第４実施形態による半導体装置を、図８を参照して説明する。図８は本実施形態の半導体装置の上面図である。本実施形態の半導体装置は、図２に示す第１実施形態の半導体装置において、配線１１の両側の絶縁膜３に形成された溝の平面形状が山の頂部をカットした形状の溝１０とした構成となっている。本実施形態も第１実施形態と同様の効果を有することはいうまでもない。 (Fourth embodiment)
Next, a semiconductor device according to a fourth embodiment of the present invention will be described with reference to FIG. FIG. 8 is a top view of the semiconductor device of this embodiment. In the semiconductor device of the present embodiment, the planar shape of the grooves formed in the insulating film 3 on both sides of the wiring 11 in the semiconductor device of the first embodiment shown in FIG. It has a configuration. It goes without saying that the present embodiment also has the same effect as the first embodiment.

また、本実施形態では、溝の山と電極２との干渉を避けて、電極２と電極６の距離を短くした設計が可能となる。電極間距離を短くすると全体の実装面積を小さくすることができ、デッドスペースを減らすことができる。   Further, in the present embodiment, it is possible to design the distance between the electrode 2 and the electrode 6 to be short while avoiding the interference between the groove crest and the electrode 2. When the distance between the electrodes is shortened, the entire mounting area can be reduced, and the dead space can be reduced.

（第５実施形態）
次に、本発明の第５実施形態による半導体装置を、図９を参照して説明する。図９は本実施形態の半導体装置の上面図である。本実施形態の半導体装置は、図２に示す第１実施形態の半導体装置において、絶縁膜３に形成された溝の平面形状が谷の部分を滑らかな曲線形状とした構成となっている。本実施形態も第１実施形態と同様の効果を有することはいうまでもない。 (Fifth embodiment)
Next, a semiconductor device according to a fifth embodiment of the present invention will be described with reference to FIG. FIG. 9 is a top view of the semiconductor device of this embodiment. The semiconductor device according to the present embodiment has a configuration in which, in the semiconductor device according to the first embodiment shown in FIG. 2, the planar shape of the groove formed in the insulating film 3 has a valley portion with a smooth curved shape. It goes without saying that the present embodiment also has the same effect as the first embodiment.

谷部が尖っていると、スロープがうまく谷部で止まらずに溝を超えて広がってしまうということが生じる可能性がある。しかし、本実施形態のように、谷部を滑らかな曲線にすることにより、スロープが溝を超えて広がってしまうことを抑制することができる。なお、滑らかな曲線でなくとも、多角形で部分的に谷の尖っている部分を減らしても同様の効果を得ることができる。   If the valley is sharp, it may happen that the slope does not stop well at the valley and spreads beyond the groove. However, it is possible to suppress the slope from spreading beyond the groove by making the valley part a smooth curve as in this embodiment. In addition, even if it is not a smooth curve, the same effect can be acquired even if it reduces the polygon and the part where the valley is partially sharpened.

（第６実施形態）
次に、本発明の第６実施形態による半導体装置を、図１０を参照して説明する。図１０は本実施形態の半導体装置の上面図である。本実施形態の半導体装置は、図２に示す第１実施形態の半導体装置において、配線１１の両側の絶縁膜３に形成された溝の平面形状が山の頂部をカットし、このカットされた部分にカットされた部分の幅よりも大きな幅の四角形状の溝を追加した構成となっている。このため、この四角形状の溝にスロープ９の形成材料が埋め込まれる。このため、液適吐出法で配線１１を形成した場合に、この四角形状の溝に埋め込まれたスロープ材が、液体材料が外側に回り込むのを防止する返し構造を構成することになる。このため、配線１１が最も断線しやすいスロープ９の下端付近で配線の形成方向に垂直な方向への、吐出された液体材料の広がりを第１実施形態に比べて、更に抑えられことができる。これにより、第１実施形態よりも断線を防止することができる。また、スロープ９の下端付近で配線の形成方向に垂直な方向への広がりが抑えられるので、隣接配線とのショートを第１実施形態よりも防止することができる。 (Sixth embodiment)
Next, a semiconductor device according to a sixth embodiment of the present invention will be described with reference to FIG. FIG. 10 is a top view of the semiconductor device of this embodiment. The semiconductor device of this embodiment is the same as that of the semiconductor device of the first embodiment shown in FIG. 2 except that the planar shape of the groove formed in the insulating film 3 on both sides of the wiring 11 cuts the top of the mountain. A rectangular groove having a width larger than the width of the cut portion is added. For this reason, the forming material of the slope 9 is embedded in this square groove. For this reason, when the wiring 11 is formed by the appropriate liquid discharge method, a slope structure embedded in the rectangular groove prevents the liquid material from flowing outward. For this reason, it is possible to further suppress the spread of the discharged liquid material in the direction perpendicular to the wiring formation direction in the vicinity of the lower end of the slope 9 where the wiring 11 is most likely to be disconnected, compared to the first embodiment. Thereby, disconnection can be prevented more than in the first embodiment. Further, since the spread in the direction perpendicular to the wiring formation direction is suppressed near the lower end of the slope 9, a short circuit with the adjacent wiring can be prevented more than in the first embodiment.

本発明の第１実施形態の半導体装置の上面図。1 is a top view of a semiconductor device according to a first embodiment of the present invention. 図１に示す切断線Ａ−Ａで切断した断面図。Sectional drawing cut | disconnected by the cutting line AA shown in FIG. 図１に示す切断線ａ−ａ、ｂ−ｂ、ｃ−ｃ、ｄ−ｄ、ｅ−ｅ、ｆ−ｆ、ｇ−ｇで切断した断面図。Sectional drawing cut | disconnected by the cutting line aa, bb, cc, dd, ee, ff, gg shown in FIG. 第１実施形態の変形例による半導体装置の断面図。Sectional drawing of the semiconductor device by the modification of 1st Embodiment. 第２実施形態の半導体装置の断面図。Sectional drawing of the semiconductor device of 2nd Embodiment. 第３実施形態の半導体装置の上面図。The top view of the semiconductor device of a 3rd embodiment. 図６に示す切断線Ａ−Ａで切断した断面図。Sectional drawing cut | disconnected by cutting line AA shown in FIG. 第４実施形態の半導体装置の上面図。The top view of the semiconductor device of a 4th embodiment. 第５実施形態の半導体装置の上面図。The top view of the semiconductor device of a 5th embodiment. 第６実施形態の半導体装置の上面図。The top view of the semiconductor device of a 6th embodiment.

符号の説明Explanation of symbols

１ 電子デバイス
２ 電極
３ 絶縁膜
４ 開口
５ 電子デバイス
６ 電極
７ 絶縁膜
８ 開口
９ スロープ
１０ 溝
１１ 配線 DESCRIPTION OF SYMBOLS 1 Electronic device 2 Electrode 3 Insulating film 4 Opening 5 Electronic device 6 Electrode 7 Insulating film 8 Opening 9 Slope 10 Groove 11 Wiring

Claims (6)

基板上に形成された第１電極と、前記基板を覆うように形成され前記第１電極の少なくとも一部を露出させる開口を有する絶縁膜と、前記絶縁膜の上に設けられ、上面に第２電極を有する電子デバイスと、前記絶縁膜の上面と前記電子デバイスの上面との段差を埋めるスロープと、前記スロープの外周近傍の前記絶縁膜に設けられた溝と、前記スロープ上に形成され前記第１電極と前記第２電極を接続する配線と、を備え、
前記溝は、前記配線が前記スロープを伝って前記絶縁膜と最初に接する点を中心として、前記最初に接する点から前記配線が延在する方向と略直交する方向に遠ざかるにつれて、前記電子デバイスとの距離が増加して最大となりその後減少するように形成されていることを特徴とする半導体装置。 A first electrode formed on the substrate; an insulating film formed to cover the substrate and having an opening exposing at least a part of the first electrode; and a second electrode on the upper surface. An electronic device having an electrode; a slope that fills a step between the upper surface of the insulating film and the upper surface of the electronic device; a groove provided in the insulating film near an outer periphery of the slope; and the first electrode formed on the slope. A wiring connecting one electrode and the second electrode,
As the groove moves away from the first contact point in a direction substantially perpendicular to the direction in which the wiring extends, centering on the point at which the wiring first contacts the insulating film along the slope, The semiconductor device is characterized in that the distance is increased to become a maximum and then decreased. 前記スロープは、前記電子デバイスの上面から前記絶縁膜に至るまでに、前記配線が延在して方法と直交する方向の断面形状が平坦から段々と２つの山形状となるように変化していることを特徴とする請求項１記載の半導体装置。   The slope changes from the upper surface of the electronic device to the insulating film so that the wiring extends and the cross-sectional shape in the direction orthogonal to the method gradually changes from flat to two mountain shapes. The semiconductor device according to claim 1. 前記配線は、前記スロープの前記２つの山の間の谷の部分に形成されていることを特徴とする請求項２記載の半導体装置。   The semiconductor device according to claim 2, wherein the wiring is formed in a valley portion between the two peaks of the slope. 前記溝は、前記電子デバイスとの距離が最大となる部分が連続した一つの領域を形成していることを特徴とする請求項１乃至３のいずれかに記載の半導体装置。   4. The semiconductor device according to claim 1, wherein the groove forms one region in which a portion having a maximum distance from the electronic device is continuous. 5. 前記溝は、前記一つの領域に、この領域の幅よりも広い幅の略四角形状の溝が更に設けられおり、前記四角形状の溝にも前記スロープと同じ材料が埋め込まれていることを特徴とする請求項４記載の半導体装置。   The groove is further provided in the one region with a substantially rectangular groove having a width wider than the width of the region, and the same material as the slope is embedded in the rectangular groove. The semiconductor device according to claim 4. 第１電極が形成された基板上に絶縁膜を形成する工程と、
前記絶縁膜に、前記第１電極に通じる開口と、前記第１電極に接続する配線が形成される領域の両側にそれぞれ溝とを形成する工程と、
前記絶縁膜の、前記溝からみて前記開口とは反対側の領域上に、上面に第２電極を有する電子デバイスを設ける工程と、
前記絶縁膜と前記電子デバイスの上面との段差を埋め、前記電子デバイスの上面から前記溝に向かって傾斜したスロープを形成する工程と、
前記スロープ上に、前記第１電極と前記第２電極と接続する前記配線を液適吐出法により形成する工程と、
を備え、
前記溝は、前記配線が前記スロープを伝って前記絶縁膜と最初に接する点を中心として、前記最初に接する点から前記配線が延在する方向と略直交する方向に遠ざかるにつれて、前記電子デバイスとの距離が増加して最大となりその後減少するように形成されている
ことを特徴とする半導体装置の製造方法。 Forming an insulating film on the substrate on which the first electrode is formed;
Forming a groove on each side of a region where an opening leading to the first electrode and a wiring connected to the first electrode are formed in the insulating film;
Providing an electronic device having a second electrode on the upper surface of the insulating film on a region opposite to the opening when viewed from the groove;
Filling a step between the insulating film and the upper surface of the electronic device, and forming a slope inclined from the upper surface of the electronic device toward the groove;
Forming the wiring connecting the first electrode and the second electrode on the slope by a liquid ejection method;
With
As the groove moves away from the first contact point in a direction substantially perpendicular to the direction in which the wiring extends, centering on the point at which the wiring first contacts the insulating film along the slope, A method of manufacturing a semiconductor device, characterized in that the distance is increased to a maximum and then decreased.
JP2007220887A 2007-08-28 2007-08-28 Semiconductor device and manufacturing method thereof Expired - Fee Related JP4940063B2 (en)

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