JP2009038209A - Silicon electrode plate providing uniform etching - Google Patents

Silicon electrode plate providing uniform etching Download PDF

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JP2009038209A
JP2009038209A JP2007200964A JP2007200964A JP2009038209A JP 2009038209 A JP2009038209 A JP 2009038209A JP 2007200964 A JP2007200964 A JP 2007200964A JP 2007200964 A JP2007200964 A JP 2007200964A JP 2009038209 A JP2009038209 A JP 2009038209A
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electrode plate
silicon electrode
silicon
etching
hole portion
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Takashi Yonehisa
孝志 米久
Satoshi Fujita
悟史 藤田
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Mitsubishi Materials Corp
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Mitsubishi Materials Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a silicon electrode plate achieving uniform plasma etching even when the etching is carried out for a long time. <P>SOLUTION: The silicon electrode plate is constituted by boring gas jet holes 5 in a silicon electrode plate 2, and each of the gas jet holes 5 has a bottomed large-diameter hole portion 8 whose depth is less than the thickness of the silicon electrode plate 2 and which has an axis along the thickness of the silicon electrode plate and a plurality of through thin holes 9 penetrating the silicon electrode plate along the thickness of the silicon electrode plate 2 in nonparallel directions from a bottom portion of the bottomed large-diameter hole portion 8 to one surface of the silicon electrode plate 2. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

この発明は、ＳｉＯ２膜を形成したウエハなどを均一にエッチングすることができるシリコン電極板に関するものである。 The present invention relates to a silicon electrode plate capable of uniformly etching a wafer or the like on which a SiO 2 film is formed.

一般に、半導体集積回路を製造する工程においてウエハをエッチングする工程があり、このエッチングは一般にプラズマエッチング法により行われている。図３はプラズマエッチング法を説明するための断面説明図であり、図３において、１は真空容器、２はシリコン電極板、３は架台である。図３に示されるように、真空容器１内にシリコン電極板２および架台３が間隔をおいて設けられており、架台３の上にウエハ４を載置し、エッチングガス７をシリコン電極板２に設けられたガス噴出孔５を通してウエハ４に向って流しながら高周波電源６により電極板２と架台３の間に高周波電圧を印加し、高周波電圧の印加によりシリコン電極板２と架台３の間の空間にプラズマ１０を発生させ、このプラズマ１０による物理反応と、シリコン−エッチングガス７による化学反応により、ウエハ４の表面をエッチングすることにより行われる。   In general, there is a process of etching a wafer in a process of manufacturing a semiconductor integrated circuit, and this etching is generally performed by a plasma etching method. FIG. 3 is a cross-sectional explanatory view for explaining the plasma etching method. In FIG. 3, 1 is a vacuum vessel, 2 is a silicon electrode plate, and 3 is a frame. As shown in FIG. 3, a silicon electrode plate 2 and a gantry 3 are provided in the vacuum vessel 1 with a space therebetween, a wafer 4 is placed on the gantry 3, and an etching gas 7 is supplied to the silicon electrode plate 2. A high frequency voltage is applied between the electrode plate 2 and the gantry 3 by the high frequency power source 6 while flowing toward the wafer 4 through the gas ejection holes 5 provided in the substrate, and a high frequency voltage is applied between the silicon electrode plate 2 and the gantry 3. Plasma 10 is generated in the space, and the surface of the wafer 4 is etched by a physical reaction by the plasma 10 and a chemical reaction by the silicon-etching gas 7.

シリコン電極板２は５〜２０ｍｍの厚さを有し、単結晶シリコン、多結晶シリコン、柱状晶シリコンからなることが知られているが、現在ではＣＺ法により引き上げられた単結晶シリコンインゴットを輪切り状に切断したのち表面研磨して作製した単結晶シリコン電極板が多く使用されている。これらシリコン電極板に形成されているガス噴出孔５は一般に直径：０．５ｍｍを有するが、エッチングガス流入側の径をエッチングガス流出側の径よりも大きくしたものも知られており、図４に示されるように大径孔部分１１および小径孔部分１２を有するガス噴出孔５も知られている（特許文献１参照）。そして、このようにシリコン電極板２の厚さ方向に平行に設けられているガス噴出孔５の小径孔部分１２の直径は０．２〜０．８ｍｍを有し、大径孔部分１１の直径は小径孔部分１２の直径の０．０１〜１０倍の直径を有するとされている。図３および図４に示されるガス噴出孔５を通過したエッチングガス７はウエハ４に直角に当るようになっている。
特開２００１−１０２３５７号公報 The silicon electrode plate 2 has a thickness of 5 to 20 mm, and is known to be made of single crystal silicon, polycrystalline silicon, or columnar crystal silicon. A single-crystal silicon electrode plate produced by cutting the surface and then polishing the surface is often used. The gas ejection holes 5 formed in these silicon electrode plates generally have a diameter of 0.5 mm, but it is also known that the diameter on the etching gas inflow side is larger than the diameter on the etching gas outflow side. As shown in FIG. 1, a gas ejection hole 5 having a large-diameter hole portion 11 and a small-diameter hole portion 12 is also known (see Patent Document 1). And the diameter of the small diameter hole part 12 of the gas ejection hole 5 provided in parallel with the thickness direction of the silicon electrode plate 2 in this way has 0.2-0.8 mm, and the diameter of the large diameter hole part 11 Is assumed to have a diameter of 0.01 to 10 times the diameter of the small-diameter hole portion 12. The etching gas 7 that has passed through the gas ejection holes 5 shown in FIGS. 3 and 4 strikes the wafer 4 at a right angle.
JP 2001-102357 A

前述のように、一般に、シリコン電極板にはシリコン電極板の厚さ方向に平行に穿設されたガス噴出孔が多数設けられており、かかる構造のガス噴出孔を有するシリコン電極板を使用して被エッチング物であるウエハのプラズマエッチングを行なうと、ウエハ面内をエッチングすることができるが、長時間プラズマエッチングを行うとエッチングの均一性が損なわれるようになる。   As described above, in general, a silicon electrode plate is provided with a number of gas ejection holes drilled in parallel to the thickness direction of the silicon electrode plate, and a silicon electrode plate having such a structure is used. When the plasma etching of the wafer to be etched is performed, the inside of the wafer can be etched. However, if the plasma etching is performed for a long time, the uniformity of etching is impaired.

そこで、本発明者等は、長時間プラズマエッチングしてもウエハのエッチングの均一性が損なわれることのないプラズマエッチング手段を開発すべく研究を行った。
その結果、シリコン電極板に穿設されているガス噴出孔の形状構造がエッチングの均一性に大きく影響を及ぼし、前記ガス噴出孔が図１の断面説明図に示されるように、深さがシリコン電極板の厚さよりも浅くかつ軸がシリコン電極板の厚さ方向になるように設けられている有底大径孔部分８と、この有底大径孔部分８の底部分から厚さ方向に対して非平行な方向に向かってシリコン電極板の片面に貫通している複数の貫通細孔９を有するシリコン電極板を用いてプラズマエッチングを行うと、一層均一なプラズマエッチングすることができる、という研究結果が得られたのである。 Therefore, the present inventors have studied to develop a plasma etching means that does not impair the uniformity of wafer etching even if plasma etching is performed for a long time.
As a result, the shape structure of the gas ejection holes drilled in the silicon electrode plate greatly affects the uniformity of etching, and the gas ejection holes have a depth of silicon as shown in the cross-sectional explanatory view of FIG. A bottomed large-diameter hole portion 8 which is shallower than the thickness of the electrode plate and whose axis is in the thickness direction of the silicon electrode plate, and from the bottom portion of the bottomed large-diameter hole portion 8 to the thickness direction Study that a more uniform plasma etching can be achieved by performing plasma etching using a silicon electrode plate having a plurality of through-holes 9 penetrating on one side of the silicon electrode plate in a non-parallel direction. The result was obtained.

この発明は、かかる研究結果に基づいてなされたものであって、
（１）シリコン電極板にガス噴出孔を設けてなるシリコン電極板において、前記ガス噴出孔は、深さがシリコン電極板の厚さよりも浅くかつ軸がシリコン電極板の厚さ方向になるように設けられている有底大径孔部分と、この有底大径孔部分の底部分からシリコン電極板の厚さ方向に対して非平行な方向に向かってシリコン電極板の片面に貫通している複数の貫通細孔とからなる均一なエッチングを行うことができるシリコン電極板、に特徴を有するものである。 The present invention has been made based on the results of such research,
(1) In a silicon electrode plate in which a gas ejection hole is provided in a silicon electrode plate, the gas ejection hole has a depth shallower than the thickness of the silicon electrode plate and the axis is in the thickness direction of the silicon electrode plate. A plurality of bottomed large-diameter holes provided and a plurality of holes penetrating from one bottom of the bottomed large-diameter hole to one side of the silicon electrode plate in a direction non-parallel to the thickness direction of the silicon electrode plate The silicon electrode plate is characterized by a uniform etching comprising the through-holes.

次に、この発明の均一なエッチングを行うことができるシリコン電極板を図面に基づいて説明する。   Next, a silicon electrode plate capable of performing uniform etching according to the present invention will be described with reference to the drawings.

図１はこの発明の均一なエッチングを行うことができるシリコン電極板２のガス噴出孔にエッチングガスを通してウエハ４に向って流している状態を示す断面説明図である。この発明の均一なエッチングを行うことができるシリコン電極板は、まず、円板状シリコン板を用意し、この円板状シリコン板の厚さ方向に円板状シリコン板の厚さよりも浅い有底大径孔部分８を穿設し、この有底大径孔部分８の底部分から円板状シリコン板の厚さ方向に対して非平行な方向に向かって円板状シリコン板の反対側の面に貫通する貫通細孔９を複数本穿設することにより作製することができる。 FIG. 1 is a cross-sectional explanatory view showing a state in which an etching gas flows through a gas ejection hole of a silicon electrode plate 2 capable of performing uniform etching according to the present invention toward a wafer 4. The silicon electrode plate capable of performing uniform etching according to the present invention is prepared by first preparing a disk-shaped silicon plate, and having a bottom having a depth shallower than the thickness of the disk-shaped silicon plate in the thickness direction of the disk-shaped silicon plate. A large-diameter hole portion 8 is formed, and the surface on the opposite side of the disk-shaped silicon plate from the bottom portion of the bottomed large-diameter hole portion 8 toward a direction non-parallel to the thickness direction of the disk-shaped silicon plate It can be produced by perforating a plurality of through-holes 9 penetrating into the surface.

この発明の均一なエッチングを行うことができるシリコン電極板に設けられたガス噴出孔５の模型を図２の斜視図に示す。図２に示されるように、この発明の均一なエッチングを行うことができるシリコン電極板に設けられるガス噴出孔５の有底大径孔部分８は、図２（ａ）に示されるようにストレート部分を有する円筒状の有底大径孔部分８であっても良く、図２（ｂ）に示されるようにテーパを有する円錐台状の有底大径孔部分８であっても良く、さらに図２（ｃ）に示されるように円筒状と円錐状の孔が接続した形状を有する有底大径孔部分８あっても良い。その形状は特に限定されるものではなく、いかなる形状の有底孔であってもよい。そして、有底大径孔部分８から分岐する貫通細孔９は底部分から厚さ方向に対して非平行な方向に向かってシリコン電極板の反対面に貫通するように複数本の貫通細孔９が設けられている。ここで有底大径孔部分８の底部分とは、有底大径孔部分８の底であっても良く、有底大径孔部分８の底から少し上に離れた有底大径孔部分８の側壁であってもよい。前記有底大径孔部分８から分岐して設けられる貫通細孔９の直径は０．２〜０．８ｍｍの範囲内にあることが好ましいが、有底大径孔部分８の直径は貫通細孔９の直径よりも大きくて貫通細孔９を複数本穿設できる大きさがあればよく、特に限定されるものではない。 A model of the gas ejection hole 5 provided in the silicon electrode plate capable of performing uniform etching according to the present invention is shown in the perspective view of FIG. As shown in FIG. 2, the bottomed large-diameter hole portion 8 of the gas ejection hole 5 provided in the silicon electrode plate capable of performing uniform etching according to the present invention is straight as shown in FIG. It may be a cylindrical bottomed large-diameter hole portion 8 having a portion, or may be a truncated cone-shaped bottomed large-diameter hole portion 8 having a taper as shown in FIG. As shown in FIG. 2C, there may be a bottomed large-diameter hole portion 8 having a shape in which a cylindrical hole and a conical hole are connected. The shape is not particularly limited, and may be a bottomed hole of any shape. The through-holes 9 branched from the bottomed large-diameter hole portion 8 have a plurality of through-holes 9 so as to penetrate from the bottom portion to the opposite surface of the silicon electrode plate in a direction non-parallel to the thickness direction. Is provided. Here, the bottom portion of the bottomed large-diameter hole portion 8 may be the bottom of the bottomed large-diameter hole portion 8, and the bottomed large-diameter hole slightly separated from the bottom of the bottomed large-diameter hole portion 8. It may be the side wall of the portion 8. The diameter of the through-hole 9 that is branched from the bottomed large-diameter hole portion 8 is preferably in the range of 0.2 to 0.8 mm. There is no particular limitation as long as it has a size larger than the diameter of the hole 9 and can pierce a plurality of through-holes 9.

この発明のシリコン電極板の有底大径孔部分８とこの有底大径孔部分８に分岐して設けられた貫通細孔９からなるガス噴出孔を設けたシリコン電極板を使用して長時間プラズマエッチングを行っても均一なエッチングを行うことができる理由は明らかではないが、この発明のシリコン電極板を使用してプラズマエッチングを行うと、エッチングガスの流速は一時的に有底大径孔部分８で遅くなり、その後シリコン板の厚さ方向に対して非平行な方向に向かってシリコン電極板の片面に貫通している複数の貫通細孔９を通過して流出するために、エッチングガスの流れが交差し、そのためにエッチングガスの流れが和らげながらウエハ４に衝突するためと考えられる。 The silicon electrode plate according to the present invention is long using a silicon electrode plate provided with a gas ejection hole comprising a bottomed large-diameter hole portion 8 and a through-hole 9 branched from the bottomed large-diameter hole portion 8. Although the reason why uniform etching can be performed even if time plasma etching is performed is not clear, when plasma etching is performed using the silicon electrode plate of the present invention, the flow rate of the etching gas temporarily has a large diameter with a bottom. Etching to slow down at the hole portion 8 and then flow out through the plurality of through-holes 9 penetrating to one side of the silicon electrode plate in a direction non-parallel to the thickness direction of the silicon plate. It is considered that the gas flows intersect each other and collide with the wafer 4 while the etching gas flow is softened.

この発明のシリコン電極板を使用してウエハ等を長時間プラズマエッチングしても均一にエッチングすることができるので、半導体集積回路を効率良く生産することができ、半導体装置産業の発展に大いに貢献しうるものである。   Since the silicon electrode plate of the present invention can be used to uniformly etch a wafer or the like even if it is plasma-etched for a long time, a semiconductor integrated circuit can be produced efficiently, greatly contributing to the development of the semiconductor device industry. It can be.

直径：３００ｍｍ、厚さ：１０ｍｍを有する単結晶シリコンからなる円板状シリコン板を用意し、この円板状シリコン板に直径：８ｍｍ、深さ：５ｍｍを有する有底大径孔部分をダイヤモンドドリルを用いて穿設し、さらにこの有底大径孔部分の底から円板状シリコン板の厚さ方向に対して非平行な方向に向かって円板状シリコン板の反対面に貫通している４本の直径：０．５ｍｍを有する貫通細孔をダイヤモンドドリルを用いて穿設し、ガス噴出孔を有する本発明シリコン電極板を作製した。   A disk-shaped silicon plate made of single-crystal silicon having a diameter of 300 mm and a thickness of 10 mm is prepared, and a diamond drill is formed on the bottomed large-diameter hole portion having a diameter of 8 mm and a depth of 5 mm. And penetrates from the bottom of the bottomed large-diameter hole portion to the opposite surface of the disk-shaped silicon plate in a direction non-parallel to the thickness direction of the disk-shaped silicon plate. Four through-holes having a diameter of 0.5 mm were drilled using a diamond drill to produce the silicon electrode plate of the present invention having gas ejection holes.

さらに、先に用意した直径：３００ｍｍ、厚さ：５ｍｍを有する単結晶シリコンからなる円板状シリコン板に直径：０．５ｍｍの貫通細孔を円板状シリコン板の厚さ方向に平行でかつ孔間ピッチ：８ｍｍとなるようにダイヤモンドドリルを用いて穿設することによりガス噴出孔を有する従来シリコン電極板を作製した。 Further, a through-hole having a diameter of 0.5 mm is parallel to the thickness direction of the disc-shaped silicon plate in the disc-shaped silicon plate made of single crystal silicon having a diameter of 300 mm and a thickness of 5 mm prepared in advance. A conventional silicon electrode plate having gas ejection holes was prepared by drilling with a diamond drill so that the pitch between holes was 8 mm.

得られた本発明シリコン電極板および従来シリコン電極板をそれぞれエッチング装置にセットし、予めＣＶＤによりＳｉＯ2 層を形成した外径：２００ｍｍを有するウエハをエッチング装置にセットし、
チャンバー内圧力：１０-1Ｔｏｒｒ、
エッチングガス組成：９０sccmＣＨＦ3 ＋４sccmＯ2 ＋１５０sccmＨｅ、
高周波電力：２ｋＷ、
周波数：２０ｋＨｚ、
の条件で、ウエハ表面のＳｉＯ2 層のプラズマエッチングを行ない、エッチング開始から４００時間経過した時点でのウエハ表面のＳｉＯ2 層の最大エッチングの深さＡおよび最小エッチングの深さＢをそれぞれ測定し、その測定値から（Ａ−Ｂ）／Ｂ×１００（％）の値を求め、その結果を表１に示してウエハ表面のエッチング均一性を評価した。 The obtained silicon electrode plate of the present invention and the conventional silicon electrode plate were respectively set in an etching apparatus, and a wafer having an outer diameter of 200 mm in which a SiO 2 layer was previously formed by CVD was set in the etching apparatus.
Chamber internal pressure: 10 −1 Torr,
Etching gas composition: 90 sccm CHF 3 +4 sccm O 2 +150 sccm He,
High frequency power: 2kW
Frequency: 20kHz,
Under the conditions, plasma etching of the SiO 2 layer on the wafer surface is performed, and the maximum etching depth A and the minimum etching depth B of the SiO 2 layer on the wafer surface at the time when 400 hours have elapsed from the start of etching are measured. From the measured value, a value of (A−B) / B × 100 (%) was obtained, and the result is shown in Table 1 to evaluate the etching uniformity on the wafer surface.

Figure 2009038209
Figure 2009038209

表１に示される結果から、本発明シリコン電極板は、従来シリコン電極板に比べて長時間プラズマエッチングを行ってもウエハ表面を均一にエッチングできることが分かる。 From the results shown in Table 1, it can be seen that the silicon electrode plate of the present invention can uniformly etch the wafer surface even if plasma etching is performed for a longer time than the conventional silicon electrode plate.

この発明のシリコン電極板を用いてプラズマエッチングする際のエッチングガスの流れを説明するための断面説明図である。It is sectional explanatory drawing for demonstrating the flow of the etching gas at the time of carrying out plasma etching using the silicon electrode plate of this invention. この発明のシリコン電極板に設けられたガス噴出孔の形状構造を模型的に示した斜視図である。It is the perspective view which showed typically the shape structure of the gas ejection hole provided in the silicon electrode plate of this invention. 従来のプラズマエッチング装置の断面説明図である。It is sectional explanatory drawing of the conventional plasma etching apparatus. 従来のシリコン電極板に設けられたガス噴出孔およびエッチングガスの流れを説明するための断面説明図である。It is sectional explanatory drawing for demonstrating the flow of the gas ejection hole provided in the conventional silicon electrode plate, and etching gas.

符号の説明Explanation of symbols

１：真空容器、２：電極板、３：架台、４：ウエハ、５：ガス噴出孔、６：高周波電源、７：プラズマエッチングガス、８：有底大径孔部分、９：貫通細孔、１０：ブラズマ、１１：大径孔部分、１２：小径孔部分   1: vacuum vessel, 2: electrode plate, 3: mount, 4: wafer, 5: gas ejection hole, 6: high-frequency power supply, 7: plasma etching gas, 8: bottomed large-diameter hole portion, 9: through-hole, 10: Plasma, 11: Large diameter hole portion, 12: Small diameter hole portion

Claims (3)

シリコン電極板にガス噴出孔を設けてなるシリコン電極板において、前記ガス噴出孔は、深さがシリコン電極板の厚さよりも浅くかつ軸がシリコン電極板の厚さ方向になるように設けられている有底大径孔部分と、この有底大径孔部分の底部分からシリコン電極板の厚さ方向に対して非平行な方向に向かってシリコン電極板の片面に貫通している複数の貫通細孔とからなることを特徴とする均一なエッチングを行うことができるシリコン電極板。 In the silicon electrode plate in which the gas ejection holes are provided in the silicon electrode plate, the gas ejection holes are provided such that the depth is shallower than the thickness of the silicon electrode plate and the axis is in the thickness direction of the silicon electrode plate. A bottomed large-diameter hole portion and a plurality of through-holes penetrating from the bottom portion of the bottomed large-diameter hole portion to one side of the silicon electrode plate in a direction non-parallel to the thickness direction of the silicon electrode plate. A silicon electrode plate capable of performing uniform etching, characterized by comprising holes. 前記貫通細孔は０．２〜０．８ｍｍの範囲内にあることを特徴とする請求項１記載の均一なエッチングを行うことができるシリコン電極板。 2. The silicon electrode plate capable of performing uniform etching according to claim 1, wherein the through-holes are in a range of 0.2 to 0.8 mm. 前記有底大径孔部分の底部分からシリコン板の厚さ方向に対して非平行な方向に向かってシリコン電極板の片面に貫通している複数の貫通細孔は、前記有底大径孔部分の軸からはなれるようにシリコン電極板の片面に向かって延びていることを特徴とする請求項１または２記載の均一なエッチングを行うことができるシリコン電極板。 A plurality of through-holes penetrating from one bottom surface of the silicon electrode plate toward a direction non-parallel to the thickness direction of the silicon plate from the bottom portion of the bottomed large-diameter hole portion are the bottomed large-diameter hole portion. 3. The silicon electrode plate capable of performing uniform etching according to claim 1, wherein the silicon electrode plate extends toward one surface of the silicon electrode plate so as to be separated from the axis of the silicon electrode plate.
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WO2018012267A1 (en) * 2016-07-15 2018-01-18 株式会社東芝 Flow path structure and treatment device
CN110391120A (en) * 2018-04-17 2019-10-29 北京北方华创微电子装备有限公司 A kind of spray head and plasma process chamber

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JP2003243365A (en) * 2002-02-20 2003-08-29 Hitachi High-Technologies Corp Plasma etching method
JP2005166869A (en) * 2003-12-02 2005-06-23 Nec Kansai Ltd Dry etching device

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JP2003243365A (en) * 2002-02-20 2003-08-29 Hitachi High-Technologies Corp Plasma etching method
JP2005166869A (en) * 2003-12-02 2005-06-23 Nec Kansai Ltd Dry etching device

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WO2018012267A1 (en) * 2016-07-15 2018-01-18 株式会社東芝 Flow path structure and treatment device
JP2018011032A (en) * 2016-07-15 2018-01-18 株式会社東芝 Flow path structure and treatment device
CN110391120A (en) * 2018-04-17 2019-10-29 北京北方华创微电子装备有限公司 A kind of spray head and plasma process chamber
CN110391120B (en) * 2018-04-17 2022-02-22 北京北方华创微电子装备有限公司 Shower nozzle and plasma processing cavity

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