JP2008060197A - Silicon electrode plate for plasma etching not damaging cooling plate - Google Patents

Silicon electrode plate for plasma etching not damaging cooling plate Download PDF

Info

Publication number
JP2008060197A
JP2008060197A JP2006233210A JP2006233210A JP2008060197A JP 2008060197 A JP2008060197 A JP 2008060197A JP 2006233210 A JP2006233210 A JP 2006233210A JP 2006233210 A JP2006233210 A JP 2006233210A JP 2008060197 A JP2008060197 A JP 2008060197A
Authority
JP
Japan
Prior art keywords
electrode plate
silicon electrode
pores
plate
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006233210A
Other languages
Japanese (ja)
Other versions
JP2008060197A5 (en
JP4849379B2 (en
Inventor
Takashi Yonehisa
孝志 米久
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Materials Corp
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Priority to JP2006233210A priority Critical patent/JP4849379B2/en
Publication of JP2008060197A publication Critical patent/JP2008060197A/en
Publication of JP2008060197A5 publication Critical patent/JP2008060197A5/ja
Application granted granted Critical
Publication of JP4849379B2 publication Critical patent/JP4849379B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Drying Of Semiconductors (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a silicon electrode plate for plasma etching giving no damage on a cooling plate. <P>SOLUTION: The silicon electrode plate has a vertical fine hole 2 formed toward the direction parallel to the thickness direction of the silicon electrode plate from the plasma side of the silicon electrode plate, and a fine through-hole formed of a sloping fine hole 12 in the non-parallel direction in the thickness direction of the silicon electrode plate formed connected to such vertical fine hole 2 to be extended and opened to the cooling plate side. In this silicon electrode plate, an extending fine hole having a bottom 13 is formed at the end extending portion of the vertical fine hole 2 in the direction parallel to the thickness direction of the silicon electrode plate 1. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

この発明は、冷却板を損傷することのないプラズマエッチング用シリコン電極板に関するものである。   The present invention relates to a silicon electrode plate for plasma etching that does not damage a cooling plate.

一般に、半導体集積回路を製造する際に、ウエハをエッチングする必要があるが、このウエハをエッチングするためのプラズマエッチング用シリコン電極板として、近年、図８の一部断面説明図に示されるようなシリコン電極板１を冷却板３にボルト６で固定したプラズマエッチング用シリコン電極板９が用いられている。このシリコン電極板１は単結晶、多結晶、または柱状晶のシリコンからなるが、単結晶シリコンからなるシリコン電極板が最も好ましいとされ、最も多く使用されている。このシリコン電極板１を冷却板３にボルト６で固定してなるプラズマエッチング用シリコン電極板９を冷却板３の周囲に設けられた鍔部１０により支持させることにより真空容器（図示せず）内のほぼ中央に固定し、一方、架台８の上にウエハ４を載置し、エッチングガス７をシリコン電極板１および冷却板３に設けられた貫通細孔５を通してウエハ４に向って流しながら高周波電圧を印加することによりシリコン電極板１とウエハ４の間にプラズマ１１を発生させ、このプラズマ１１がウエハ４に当ってウエハ４の表面をエッチングするようになっている。この時、シリコン電極板１の熱は冷却板３を通して放熱される（特許文献１参照）。   In general, when manufacturing a semiconductor integrated circuit, it is necessary to etch a wafer. As a silicon electrode plate for plasma etching for etching this wafer, in recent years, as shown in a partial sectional explanatory view of FIG. A silicon electrode plate 9 for plasma etching in which the silicon electrode plate 1 is fixed to the cooling plate 3 with bolts 6 is used. The silicon electrode plate 1 is made of single crystal, polycrystal, or columnar silicon, but a silicon electrode plate made of single crystal silicon is most preferable and is most frequently used. A silicon electrode plate 9 for plasma etching formed by fixing the silicon electrode plate 1 to the cooling plate 3 with bolts 6 is supported by a flange 10 provided around the cooling plate 3, so that the inside of a vacuum vessel (not shown). On the other hand, the wafer 4 is placed on the gantry 8, and the etching gas 7 flows toward the wafer 4 through the through-holes 5 provided in the silicon electrode plate 1 and the cooling plate 3. By applying a voltage, plasma 11 is generated between the silicon electrode plate 1 and the wafer 4, and the plasma 11 hits the wafer 4 to etch the surface of the wafer 4. At this time, the heat of the silicon electrode plate 1 is radiated through the cooling plate 3 (see Patent Document 1).

シリコン電極板１に設けられている貫通細孔５は、通常は、シリコン電極板１の一部拡大断面図である図７に示されるようにシリコン電極板の厚さ方向に平行な方向に形成されている。シリコン電極板において、シリコン電極板が冷却板に接する面を冷却板側、プラズマと接する側をプラズマ側と呼ぶと、貫通細孔５は通常はプラズマ側から冷却板側に向かってシリコン電極板の厚さ方向に平行になるように形成されている。しかし、そればかりでなく、図４〜５に示されるシリコン電極板の厚さ方向に平行な方向の細孔（以下、垂直細孔という）２、２´とシリコン電極板の厚さ方向に非平行な方向の細孔（以下、傾斜細孔という）１２、１２´からなる貫通細孔、さらに図６に示されるように、シリコン電極板の厚さ方向に非平行な異なる方向を有する傾斜細孔１２と１２´を接続したくの字形に形成されている貫通細孔も知られている（特許文献２参照）。
特開２００３−２８９０６４号公報 特開２００２−２４６３７１号公報 The through-holes 5 provided in the silicon electrode plate 1 are usually formed in a direction parallel to the thickness direction of the silicon electrode plate as shown in FIG. 7 which is a partially enlarged sectional view of the silicon electrode plate 1. Has been. In the silicon electrode plate, the surface where the silicon electrode plate is in contact with the cooling plate is referred to as the cooling plate side, and the side in contact with the plasma is referred to as the plasma side. It is formed so as to be parallel to the thickness direction. However, not only that, but also the pores (hereinafter referred to as vertical pores) 2, 2 'in the direction parallel to the thickness direction of the silicon electrode plate shown in FIGS. Through-holes composed of parallel-direction pores (hereinafter referred to as inclined pores) 12 and 12 ', and further, as shown in FIG. 6, inclined fine particles having different directions non-parallel to the thickness direction of the silicon electrode plate. There is also known a through-hole formed in a dogleg shape for connecting the holes 12 and 12 '(see Patent Document 2).
JP 2003-289064 A JP 2002-246371 A

シリコン電極板１は消耗により貫通細孔５の径が大きく変化し、特に貫通細孔５のプラズマ側のウエハ４に対抗する開口部はラッパ状に拡大するように変化する。それに伴って、プラズマ１１の一部がエッチングガス７の流れに逆らって逆流し、冷却板３に損傷を与え、冷却板３の貫通細孔が溶融し、冷却板の溶融物がウエハ４に付着するなどの課題があった。   In the silicon electrode plate 1, the diameter of the through-hole 5 changes greatly due to wear, and in particular, the opening portion of the through-hole 5 that opposes the plasma-side wafer 4 changes so as to expand in a trumpet shape. Along with this, a part of the plasma 11 flows backward against the flow of the etching gas 7, damages the cooling plate 3, melts the through-holes of the cooling plate 3, and the molten material of the cooling plate adheres to the wafer 4. There were issues such as.

そこで、本発明者等は、プラズマの一部がエッチングガスの流れに逆らって逆流し、それによって冷却板に損傷を与えることのないシリコン電極板を得るべく研究を行った。その結果、
（イ）シリコン電極板のプラズマ側からシリコン電極板の厚さ方向に平行な方向の板厚途中まで穿孔された有底垂直細孔を形成し、この有底垂直細孔の途中に接続し冷却板側に抜けるように形成されたシリコン電極板の厚さ方向に非平行な方向の傾斜細孔を形成することによって垂直細孔の先端の延長部に行き止まりの細孔（以下、行止り延長細孔という）が形成された貫通細孔を有するシリコン電極板は、プラズマの逆流による冷却板の損傷がなくなる、
（ロ）シリコン電極板１のプラズマ側からシリコン電極板の厚さ方向に非平行な方向に向かって板厚途中まで穿孔された有底傾斜細孔と、この有底傾斜細孔の途中に接続し冷却板側に抜けるように形成されたシリコン電極板の厚さ方向に平行な方向の垂直細孔を形成することによって傾斜細孔の先端延長部に行止り延長細孔が形成されている貫通細孔を有するシリコン電極板はプラズマの逆流による冷却板の損傷がなくなる、
（ハ）シリコン電極板のプラズマ側からシリコン電極板の厚さ方向に非平行な方向に向かって板厚途中まで穿孔された有底傾斜細孔と、この有底傾斜細孔の途中に接続し冷却板側に抜けるように形成されたシリコン電極板の厚さ方向に非平行な方向の傾斜細孔を形成することによって傾斜細孔の先端延長部に行止り延長細孔が形成されている貫通細孔を有するシリコン電極板はプラズマの逆流による冷却板の損傷がなくなる、などのという知見を得たのである。 Therefore, the present inventors have studied to obtain a silicon electrode plate in which a part of the plasma flows back against the flow of the etching gas and thereby does not damage the cooling plate. as a result,
(B) Bottomed vertical pores drilled from the plasma side of the silicon electrode plate to the middle of the thickness in the direction parallel to the thickness direction of the silicon electrode plate are formed and connected to the bottomed vertical pores for cooling. By forming inclined pores in a direction that is not parallel to the thickness direction of the silicon electrode plate that is formed so as to come out to the plate side, a dead-end pore (hereinafter referred to as a dead-end extension thin film) is formed at the extension of the tip of the vertical pore. The silicon electrode plate having through pores in which holes are formed) eliminates damage to the cooling plate due to the backflow of plasma.
(B) Bottomed inclined pores drilled from the plasma side of the silicon electrode plate 1 to the middle of the thickness in a direction non-parallel to the thickness direction of the silicon electrode plate, and connected in the middle of the bottomed inclined pores Through the formation of a vertical pore in the direction parallel to the thickness direction of the silicon electrode plate formed so as to come out to the cooling plate side, a dead end extension is formed at the tip extension of the inclined pore. The silicon electrode plate with pores eliminates damage to the cooling plate due to the backflow of plasma,
(C) Bottomed inclined pores drilled from the plasma side of the silicon electrode plate to the middle of the thickness in a direction non-parallel to the thickness direction of the silicon electrode plate, and connected to the middle of the bottomed inclined pore By forming inclined pores in a direction non-parallel to the thickness direction of the silicon electrode plate formed so as to come out to the cooling plate side, a through-hole in which the extension pore is formed at the tip extension portion of the inclined pore is formed. It was found that the silicon electrode plate having pores is free from damage to the cooling plate due to the backflow of plasma.

この発明は、かかる知見に基づいてなされたものであって、
（１）シリコン電極板のプラズマ側からシリコン電極板の厚さ方向に平行な方向に向かって形成された垂直細孔と、この垂直細孔に接続しかつ冷却板側に抜けるように形成されたシリコン電極板の厚さ方向に非平行な方向の傾斜細孔からなる貫通細孔を有するシリコン電極板において、

前記シリコン電極板の厚さ方向に平行な方向の垂直細孔の先端延長部に、行止り延長細孔を形成してなる冷却板を損傷することのないプラズマエッチング用シリコン電極板、
（２）シリコン電極板のプラズマ側からシリコン電極板の厚さ方向に非平行な方向に向かって形成された傾斜細孔と、この傾斜細孔に接続しかつ冷却板側に抜けるように形成されたシリコン電極板の厚さ方向に平行な方向に向かって形成された垂直細孔からなる貫通細孔を有するシリコン電極板において、
前記シリコン電極板の厚さ方向に非平行な方向の傾斜細孔の先端延長部に、行止り延長細孔を形成してなる冷却板を損傷することのないプラズマエッチング用シリコン電極板、
（３）シリコン電極板のプラズマ側からシリコン電極板の厚さ方向に非平行な方向に向かって形成された傾斜細孔と、この傾斜細孔に接続しかつこの傾斜細孔の方向と異なる方向のシリコン電極板の厚さ方向に非平行な方向に向かって冷却板側に出るように形成されている傾斜細孔からなる貫通細孔を有するシリコン電極板において、
前記プラズマ側からシリコン電極板の厚さ方向に非平行な方向に向かって形成された傾斜細孔の先端延長部に、行止り延長細孔を形成してなる冷却板を損傷することのないプラズマエッチング用シリコン電極板、に特徴を有するものである。

このシリコン電極板はいずれも単結晶、多結晶、または柱状晶のシリコンからなるものである。したがって、この発明は、
（４）前記シリコン電極板は、単結晶シリコン、多結晶シリコンまたは柱状晶シリコンからなる前記（１）、（２）または（３）記載の冷却板を損傷することのないプラズマエッチング用シリコン電極板、に特徴を有するものである。 This invention has been made based on such knowledge,
(1) A vertical pore formed in the direction parallel to the thickness direction of the silicon electrode plate from the plasma side of the silicon electrode plate, and formed so as to be connected to the vertical pore and come out to the cooling plate side. In the silicon electrode plate having through pores composed of inclined pores in a direction non-parallel to the thickness direction of the silicon electrode plate,

A silicon electrode plate for plasma etching without damaging a cooling plate formed by forming dead extension pores at the tip extension portions of vertical pores in a direction parallel to the thickness direction of the silicon electrode plate,
(2) Inclined pores formed from the plasma side of the silicon electrode plate toward a direction non-parallel to the thickness direction of the silicon electrode plate, and formed so as to connect to the inclined pores and come out to the cooling plate side. In the silicon electrode plate having through pores composed of vertical pores formed in the direction parallel to the thickness direction of the silicon electrode plate,
A silicon electrode plate for plasma etching that does not damage a cooling plate formed by forming dead extension pores at the tip extension portion of the inclined pores in a direction non-parallel to the thickness direction of the silicon electrode plate;
(3) Inclined pores formed in a direction non-parallel to the thickness direction of the silicon electrode plate from the plasma side of the silicon electrode plate, and a direction different from the direction of the inclined pores connected to the inclined pores In the silicon electrode plate having through pores composed of inclined pores formed so as to come out to the cooling plate side toward a direction non-parallel to the thickness direction of the silicon electrode plate,
Plasma that does not damage the cooling plate formed by forming dead extension pores in the tip extension portion of the inclined pores formed in the direction parallel to the thickness direction of the silicon electrode plate from the plasma side The silicon electrode plate for etching has a feature.

Each of the silicon electrode plates is made of single crystal, polycrystalline, or columnar silicon. Therefore, the present invention
(4) The silicon electrode plate for plasma etching which does not damage the cooling plate according to (1), (2) or (3), which is made of single crystal silicon, polycrystalline silicon or columnar crystal silicon. , Has characteristics.

この発明のプラズマエッチング用シリコン電極板を図面に基づいて一層詳細に説明する。
図１〜３は、この発明のプラズマエッチング用シリコン電極板の断面説明図であり、図１〜３において１はシリコン電極板、２および２´はシリコン電極板１の厚さ方向に平行方向に形成された垂直細孔であり、１２および１２´はシリコン電極板１の厚さ方向に非平行方向に形成された傾斜細孔である。
図１に示されるこの発明の冷却板を損傷することのないプラズマエッチング用シリコン電極板は、シリコン電極板１のプラズマ側からシリコン電極板の厚さ方向に平行な方向に向かって形成された垂直細孔２と、この垂直細孔２に接続しかつ冷却板側に抜けるように形成されたシリコン電極板の厚さ方向に非平行な方向の傾斜細孔１２からなる貫通細孔を有するシリコン電極板１において、前記シリコン電極板１の厚さ方向に平行な方向の垂直細孔の先端延長部に、行止り延長細孔１３を形成してなるものである。
そして、図１に示されるこの発明の冷却板を損傷することのないプラズマエッチング用シリコン電極板は、通常のシリコン板にプラズマ側から板厚途中まで垂直細孔を穿孔して有底垂直細孔を形成し、この有底垂直細孔の途中に接続するように傾斜細孔１２を冷却板側から穿孔することにより作製することができる。有底垂直細孔の途中に接続する傾斜細孔を冷却板側から穿孔することにより二つの細孔が直線的に接続することが無く枝分かれ状に接続し、それによって、傾斜細孔１２の先端延長部に行止り延長細孔１３が形成され、図１に示される垂直細孔２、傾斜細孔１２および行止り延長細孔１３からなる貫通細孔を作製することができる。 The silicon electrode plate for plasma etching according to the present invention will be described in more detail with reference to the drawings.
1 to 3 are cross-sectional explanatory views of the silicon electrode plate for plasma etching according to the present invention. In FIGS. 1 to 3, 1 is a silicon electrode plate, 2 and 2 'are parallel to the thickness direction of the silicon electrode plate 1. The vertical pores 12 and 12 ′ are inclined fine pores formed in a direction non-parallel to the thickness direction of the silicon electrode plate 1.
The silicon electrode plate for plasma etching shown in FIG. 1 that does not damage the cooling plate according to the present invention is formed vertically from the plasma side of the silicon electrode plate 1 in a direction parallel to the thickness direction of the silicon electrode plate. A silicon electrode having a through-hole composed of a fine hole 2 and an inclined fine hole 12 connected to the vertical fine hole 2 and extending in a direction non-parallel to the thickness direction of the silicon electrode plate formed so as to come out to the cooling plate side In the plate 1, the dead extension pore 13 is formed at the tip extension portion of the vertical pore in the direction parallel to the thickness direction of the silicon electrode plate 1.
The silicon electrode plate for plasma etching without damaging the cooling plate of the present invention shown in FIG. 1 is obtained by drilling vertical pores in the normal silicon plate from the plasma side to the middle of the plate thickness to form bottomed vertical pores. Can be produced by drilling the inclined pores 12 from the cooling plate side so as to be connected in the middle of the bottomed vertical pores. By drilling the inclined pores connected in the middle of the bottomed vertical pores from the cooling plate side, the two pores are not connected in a straight line, but are connected in a branched manner, whereby the tip of the inclined pores 12 A dead end extended pore 13 is formed in the extended portion, and a through pore composed of the vertical pore 2, the inclined pore 12, and the dead end extended pore 13 shown in FIG.

図２に示されるこの発明の冷却板を損傷することのないプラズマエッチング用シリコン電極板は、シリコン電極板のプラズマ側からシリコン電極板１の厚さ方向に非平行な方向に向かって形成された傾斜細孔１２´と、この傾斜細孔１２´に接続しかつ冷却板側に抜けるように形成されたシリコン電極板１の厚さ方向に平行な方向に向かって形成された垂直細孔２´からなる貫通細孔を有するシリコン電極板において、前記シリコン電極板の厚さ方向に非平行な方向の傾斜細孔１２´の先端延長部に、行止り延長細孔１３を形成してなるものである。
そして、図２に示されるこの発明の冷却板を損傷することのないプラズマエッチング用シリコン電極板は、通常のシリコン板にプラズマ側から板厚途中まで傾斜細孔１２´を穿孔して有底傾斜細孔を形成し、この有底傾斜細孔を有するシリコン板の有底傾斜細孔の途中に接続するように垂直細孔２´を冷却板側から穿孔することにより作製することができる。有底傾斜細孔の途中に接続する垂直細孔２´を冷却板側から穿孔することにより二つの細孔が直線的に接続することが無く枝分かれ状に接続し、傾斜細孔１２´の先端延長部に行止り延長細孔１３が形成され、図２に示される傾斜細孔１２´、垂直細孔２´および傾斜細孔１２´の先端延長部に形成された行止り延長細孔１３からなる貫通細孔を有するこの発明のシリコン電極板を作製することができる。 The silicon electrode plate for plasma etching that does not damage the cooling plate of the present invention shown in FIG. 2 was formed from the plasma side of the silicon electrode plate toward a direction non-parallel to the thickness direction of the silicon electrode plate 1. Inclined pores 12 ′ and vertical pores 2 ′ formed in a direction parallel to the thickness direction of the silicon electrode plate 1 connected to the inclined pores 12 ′ and formed so as to come out to the cooling plate side. In the silicon electrode plate having through-holes made of, the dead extension pore 13 is formed at the tip extension portion of the inclined pore 12 'in a direction non-parallel to the thickness direction of the silicon electrode plate. is there.
The silicon electrode plate for plasma etching without damaging the cooling plate of the present invention shown in FIG. 2 is obtained by drilling inclined pores 12 'from the plasma side to the middle of the plate thickness on a normal silicon plate. It can be produced by forming a fine pore and drilling the vertical fine pore 2 'from the cooling plate side so as to be connected in the middle of the bottomed inclined fine pore of the silicon plate having the bottomed inclined fine pore. By drilling a vertical pore 2 'connected in the middle of the bottomed inclined pore from the cooling plate side, the two pores are connected in a branched manner without being connected linearly, and the tip of the inclined pore 12' A dead end extended pore 13 is formed in the extended portion, and from the dead end extended pore 13 formed in the tip extended portions of the inclined pore 12 ', the vertical pore 2' and the inclined pore 12 'shown in FIG. A silicon electrode plate of the present invention having through-holes can be produced.

図３に示されるこの発明の冷却板を損傷することのないプラズマエッチング用シリコン電極板は、シリコン電極板１のプラズマ側からシリコン電極板１の厚さ方向に非平行な方向に向かって形成された傾斜細孔１２´と、この傾斜細孔１２´に接続しかつこの傾斜細孔１２´の方向と異なる方向のシリコン電極板の厚さ方向に非平行な方向に向かって冷却板側に出るように形成されている傾斜細孔１２からなる貫通細孔を有するシリコン電極板において、前記プラズマ側からシリコン電極板の厚さ方向に非平行な方向に向かって形成された傾斜細孔１２´の先端延長部に、行止り延長細孔１３を形成してなるものである。

そして、図３に示されるこの発明の冷却板を損傷することのないプラズマエッチング用シリコン電極板は、通常のシリコン板にプラズマ側から板厚途中まで傾斜細孔１２´を穿孔して有底傾斜細孔を形成し、この有底傾斜細孔を有するシリコン板の有底傾斜細孔の途中に接続するように傾斜細孔１２を冷却板側から穿孔することにより作製することができる。有底傾斜細孔の途中に接続する傾斜細孔１２を冷却板側から穿孔することにより二つの細孔が直線的に接続することが無く枝分かれ状に接続し、傾斜細孔１２´の先端延長部に行止り延長細孔１３が形成され、図３に示される傾斜細孔１２´、傾斜細孔１２および行止り延長細孔１３からなる貫通細孔を作製することができる。 A silicon electrode plate for plasma etching that does not damage the cooling plate of the present invention shown in FIG. 3 is formed from the plasma side of the silicon electrode plate 1 in a direction that is not parallel to the thickness direction of the silicon electrode plate 1. The inclined pores 12 'are connected to the inclined pores 12' and come out toward the cooling plate in a direction non-parallel to the thickness direction of the silicon electrode plate in a direction different from the direction of the inclined pores 12 '. In the silicon electrode plate having the through-holes composed of the inclined pores 12 formed as described above, the inclined pores 12 ′ formed from the plasma side toward the direction non-parallel to the thickness direction of the silicon electrode plate. A dead end extended pore 13 is formed at the tip extension portion.

The silicon electrode plate for plasma etching without damaging the cooling plate of the present invention shown in FIG. 3 is formed by drilling inclined pores 12 'from the plasma side to the middle of the plate thickness on a normal silicon plate. It can be produced by forming pores and drilling the inclined pores 12 from the cooling plate side so as to be connected in the middle of the bottomed inclined pores of the silicon plate having the bottomed inclined pores. By drilling the inclined pores 12 connected in the middle of the bottomed inclined pores from the cooling plate side, the two pores are connected in a branched manner without being connected linearly, and the tip end of the inclined pore 12 'is extended. A dead-end extended pore 13 is formed in the portion, and a through-hole composed of the inclined pore 12 ′, the inclined pore 12 and the dead-end extended pore 13 shown in FIG. 3 can be produced.

この発明の冷却板を損傷することのないプラズマエッチング用シリコン電極板は、長時間使用しても冷却板を損傷することがないのでコストが削減でき、半導体装置産業の発展に大いに貢献しうるものである。   The silicon electrode plate for plasma etching without damaging the cooling plate of the present invention does not damage the cooling plate even if it is used for a long time, so that the cost can be reduced and can greatly contribute to the development of the semiconductor device industry. It is.

実施例１
直径：３００mm、厚さ：１０mmの寸法を有する単結晶シリコン板を用意し、このシリコン板にプラズマ側から直径：０．５ｍｍの細孔を孔間距離：８ｍｍとなるようにかつシリコン板の厚さ方向に平行にシリコン板の厚さの２／３の深さとなるように有底垂直細孔を穿孔し、さらに冷却板側から直径：０．５ｍｍの傾斜細孔をこの有底垂直細孔の途中に接続するように穿孔し、垂直細孔２、傾斜細孔１２および行止り延長細孔１３を有する図１に示される貫通細孔を形成した本発明シリコン電極板を作製した。
さらに直径：３mmの貫通細孔を設けた鍔部を有するＡｌ製冷却板を用意した。
前記本発明シリコン電極板の貫通細孔の冷却板側端部とＡｌ製冷却板の貫通細孔の端部が一致するようにボルトで固定して本発明プラズマエッチング用シリコン電極板１を作製した。 Example 1
A single crystal silicon plate having a diameter of 300 mm and a thickness of 10 mm is prepared, and a pore having a diameter of 0.5 mm is formed on the silicon plate from the plasma side so that the distance between the holes is 8 mm and the thickness of the silicon plate. A bottomed vertical pore is drilled in parallel to the thickness direction to a depth of 2/3 of the thickness of the silicon plate, and an inclined pore having a diameter of 0.5 mm is further formed from the cooling plate side. A silicon electrode plate of the present invention in which the through-holes shown in FIG. 1 having the vertical pores 2, the inclined pores 12, and the dead-end extension pores 13 were formed was prepared so as to be connected in the middle.
Furthermore, an Al cooling plate having a collar portion provided with through-holes having a diameter of 3 mm was prepared.
The silicon electrode plate 1 for plasma etching of the present invention was prepared by fixing with bolts so that the end of the through hole of the silicon electrode plate of the present invention and the end of the through hole of the Al cooling plate coincided with each other. .

従来例１
実施例１で用意した単結晶シリコン板に垂直細孔２の先端と傾斜細孔１２の先端が接続するように形成し、図４に示される行止り延長細孔の無い貫通細孔を形成した従来シリコン電極板を作製し、この従来シリコン電極板の貫通細孔の冷却板側端部が実施例１で用意したＡｌ製冷却板の貫通細孔が一致するようにボルトで固定して従来プラズマエッチング用シリコン電極板１を作製した。 Conventional Example 1
The single crystal silicon plate prepared in Example 1 was formed so that the tips of the vertical pores 2 and the tips of the inclined pores 12 were connected to form through-holes having no dead end extension pores as shown in FIG. A conventional silicon electrode plate was prepared, and the conventional plasma electrode was fixed with bolts so that the through-holes of the through holes of the conventional silicon electrode plate matched the through-holes of the Al cooling plate prepared in Example 1. The silicon electrode plate 1 for etching was produced.

実施例２
直径：３００mm、厚さ：１０mmの寸法を有する単結晶シリコン板を用意し、このシリコン板にプラズマ側から直径：０．５ｍｍの細孔を孔間距離：８ｍｍとなるようにかつシリコン板の厚さ方向に非平行にシリコン板の厚さの２／３の深さとなるように有底傾斜細孔を穿孔し、さらに冷却板側から直径：０．５ｍｍの垂直細孔をこの有底傾斜細孔の途中に接続するように穿孔し、傾斜細孔１２´、垂直細孔２´および行止り延長細孔１３を有する図２に示される貫通細孔を形成した本発明シリコン電極板を作製した。
さらに直径：３mmの貫通細孔を設けた鍔部を有するＡｌ製冷却板を用意した。
前記本発明シリコン電極板の貫通細孔の冷却板側端部とＡｌ製冷却板の貫通細孔の端部が一致するようにボルトで固定して本発明プラズマエッチング用シリコン電極板２を作製した。 Example 2
A single crystal silicon plate having a diameter of 300 mm and a thickness of 10 mm is prepared, and a pore having a diameter of 0.5 mm is formed on the silicon plate from the plasma side so that the distance between the holes is 8 mm and the thickness of the silicon plate. The bottomed slanted pores are drilled so as to be 2/3 of the thickness of the silicon plate non-parallel to the thickness direction, and the vertical pores with a diameter of 0.5 mm from the cooling plate side are further drilled. A silicon electrode plate of the present invention in which through holes shown in FIG. 2 having inclined pores 12 ′, vertical pores 2 ′, and dead end extending pores 13 were formed was formed so as to be connected in the middle of the holes. .
Furthermore, an Al cooling plate having a collar portion provided with through-holes having a diameter of 3 mm was prepared.
The silicon electrode plate 2 for plasma etching of the present invention was produced by fixing with bolts so that the end of the through hole of the silicon electrode plate of the present invention and the end of the through hole of the Al cooling plate coincided with each other. .

従来例２
実施例２で用意した単結晶シリコン板に傾斜細孔１２´の先端と垂直細孔２´の先端が接続するように形成し、図５に示される行止り延長細孔の無い貫通細孔を形成した従来シリコン電極板を作製し、この従来シリコン電極板の貫通細孔の冷却板側端部と実施例１で用意したＡｌ製冷却板の貫通細孔の端部が一致するようにボルトで固定して従来プラズマエッチング用シリコン電極板２を作製した。 Conventional example 2
The single crystal silicon plate prepared in Example 2 is formed so that the tips of the inclined pores 12 ′ and the tips of the vertical pores 2 ′ are connected, and the through-holes having no dead end extension pores shown in FIG. 5 are formed. The formed conventional silicon electrode plate is manufactured, and bolts are used so that the end of the through hole of the conventional silicon electrode plate is aligned with the end of the through hole of the Al cooling plate prepared in Example 1. Conventionally, a silicon electrode plate 2 for plasma etching was prepared.

実施例３
直径：３００mm、厚さ：１０mmの寸法を有する単結晶シリコン板を用意し、このシリコン板にプラズマ側から直径：０．５ｍｍの細孔を孔間距離：８ｍｍとなるようにかつシリコン板の厚さ方向に非平行にシリコン板の厚さの２／３の深さとなるように有底傾斜細孔を穿孔し、さらに冷却板側から直径：０．５ｍｍの傾斜細孔をこの有底傾斜細孔の途中に接続するように穿孔し、傾斜細孔１２´、傾斜細孔１２および行止り延長細孔１３を有する図３に示される貫通細孔を形成した本発明シリコン電極板を作製した。
さらに直径：３mmの貫通細孔を設けた鍔部を有するＡｌ製冷却板を用意した。
前記本発明シリコン電極板の貫通細孔の冷却板側端部とＡｌ製冷却板の貫通細孔の端部が一致するようにボルトで固定して本発明プラズマエッチング用シリコン電極板３を作製した。 Example 3
A single crystal silicon plate having a diameter of 300 mm and a thickness of 10 mm is prepared, and a pore having a diameter of 0.5 mm is formed on the silicon plate from the plasma side so that the distance between the holes is 8 mm and the thickness of the silicon plate. The bottomed slanted pores are drilled so as to be 2/3 of the thickness of the silicon plate non-parallel to the thickness direction, and the bottomed slanted pores with a diameter of 0.5 mm are further formed from the cooling plate side. A silicon electrode plate of the present invention in which through-holes shown in FIG. 3 having inclined pores 12 ′, inclined pores 12, and dead extension pores 13 were formed was formed so as to be connected in the middle of the holes.
Furthermore, an Al cooling plate having a collar portion provided with through-holes having a diameter of 3 mm was prepared.
The silicon electrode plate 3 for plasma etching of the present invention was produced by fixing with bolts so that the end of the through hole of the silicon electrode plate of the present invention and the end of the through hole of the Al cooling plate coincided with each other. .

従来例３
実施例３で用意した単結晶シリコン板に傾斜細孔１２´の先端と傾斜細孔１２の先端が接続するように傾斜細孔がくの字になるように形成し、図６に示される行止り延長細孔の無い貫通細孔を形成した従来シリコン電極板を作製し、この従来シリコン電極板の貫通細孔の冷却板側端部と実施例１で用意したＡｌ製冷却板の貫通細孔の端部が一致するようにボルトで固定して従来プラズマエッチング用シリコン電極板３を作製した。 Conventional example 3
6 is formed on the single crystal silicon plate prepared in Example 3 so that the tip of the tilted pore 12 'and the tip of the tilted pore 12 are connected to each other, and the dead end shown in FIG. A conventional silicon electrode plate having through-holes without extended pores was prepared, and the through-holes of the cooling plate side of the through-holes of this conventional silicon electrode plate and the through-holes of the Al cooling plate prepared in Example 1 were prepared. A silicon electrode plate 3 for conventional plasma etching was manufactured by fixing with bolts so that the ends coincide.

この本発明プラズマエッチング用シリコン電極板１〜３および従来プラズマエッチング用シリコン電極板１〜３をプラズマエッチング装置にセットし、さらにウエハをセットし、周波数：１３．５ＭＨｚ，出力：８００Ｗ，プラズマ発生ガス：Ａｒガスの条件でプラズマを発生させ、表１に示される長時間にわたってプラズマエッチングを行い、本発明プラズマエッチング用シリコン電極板１〜３および従来プラズマエッチング用シリコン電極板１〜３を取り出してＡｌ製冷却板の損傷の有無を目視にて観察しその結果を表１に示した。
The silicon electrode plates 1 to 3 for plasma etching according to the present invention and the silicon electrode plates 1 to 3 for conventional plasma etching are set in a plasma etching apparatus, a wafer is set, a frequency: 13.5 MHz, an output: 800 W, a plasma generating gas : Plasma is generated under the conditions of Ar gas, plasma etching is performed for a long time as shown in Table 1, and the silicon electrode plates 1 to 3 for plasma etching of the present invention and the silicon electrode plates 1 to 3 for conventional plasma etching are taken out and Al The presence or absence of damage to the cooling plate made was visually observed and the results are shown in Table 1.

Figure 2008060197
Figure 2008060197

表１に示される結果から、行止り延長細孔のない貫通細孔を形成したシリコン電極板を取付けた従来プラズマエッチング用シリコン電極板１〜３のＡｌ製冷却板には損傷が見られたが、行止り延長細孔を有する貫通細孔を形成したシリコン電極板を取付けた本発明プラズマエッチング用シリコン電極板１〜３のＡｌ製冷却板には損傷が見られなかった。 From the results shown in Table 1, damage was seen in the Al cooling plates of the silicon electrode plates 1 to 3 for conventional plasma etching to which the silicon electrode plate having through holes without dead end extending pores was attached. No damage was observed on the Al cooling plates of the silicon electrode plates 1 to 3 for plasma etching of the present invention, to which the silicon electrode plate having through holes having dead end extending pores was attached.

この発明のプラズマエッチング用シリコン電極板を説明するための断面説明図である。It is a section explanatory view for explaining the silicon electrode plate for plasma etching of this invention. この発明のプラズマエッチング用シリコン電極板を説明するための断面説明図である。It is a section explanatory view for explaining the silicon electrode plate for plasma etching of this invention. この発明のプラズマエッチング用シリコン電極板を説明するための断面説明図である。It is a section explanatory view for explaining the silicon electrode plate for plasma etching of this invention. 従来のプラズマエッチング用シリコン電極板を説明するための断面説明図である。It is sectional explanatory drawing for demonstrating the conventional silicon electrode plate for plasma etching. 従来のプラズマエッチング用シリコン電極板を説明するための断面説明図である。It is sectional explanatory drawing for demonstrating the conventional silicon electrode plate for plasma etching. 従来のプラズマエッチング用シリコン電極板を説明するための断面説明図である。It is sectional explanatory drawing for demonstrating the conventional silicon electrode plate for plasma etching. 従来のプラズマエッチング用シリコン電極板を説明するための断面説明図である。It is sectional explanatory drawing for demonstrating the conventional silicon electrode plate for plasma etching. 従来のプラズマエッチング用シリコン電極板の使用状態を説明するための一部断面側面説明図である。It is a partial cross section side explanatory view for demonstrating the use condition of the conventional silicon electrode plate for plasma etching.

符号の説明Explanation of symbols

１ シリコン電極板
２ 垂直細孔
２´ 垂直細孔
３ 冷却板
４ ウエハ
５ 貫通細孔
６ ボルト
７ エッチングガス
８ 架台
９ プラズマエッチング用シリコン電極板
１０ 鍔
１１ プラズマ
１２ 傾斜細孔
１２´ 傾斜細孔
１３ 行止り延長細孔 DESCRIPTION OF SYMBOLS 1 Silicon electrode plate 2 Vertical pore 2 'Vertical pore 3 Cooling plate 4 Wafer 5 Through-pore 6 Volt 7 Etching gas 8 Mounting 9 Silicon electrode plate for plasma etching 10 鍔 11 Plasma 12 Inclined pore 12' Inclined pore 13 Dead end extended pore

Claims (4)

シリコン電極板のプラズマ側からシリコン電極板の厚さ方向に平行な方向に向かって形成された細孔（以下、垂直細孔という）と、この垂直細孔に接続しかつ冷却板側に抜けるように形成されたシリコン電極板の厚さ方向に非平行な方向の傾斜細孔からなる貫通細孔を有するシリコン電極板において、

前記シリコン電極板の厚さ方向に平行な方向の垂直細孔の先端延長部に、行止り延長細孔を形成してなることを特徴とする冷却板を損傷することのないプラズマエッチング用シリコン電極板。
Pores formed from the plasma side of the silicon electrode plate in a direction parallel to the thickness direction of the silicon electrode plate (hereinafter referred to as vertical pores), and connected to the vertical pores so as to come out to the cooling plate side In the silicon electrode plate having through pores composed of inclined pores in a direction non-parallel to the thickness direction of the silicon electrode plate formed in

A silicon electrode for plasma etching without damaging a cooling plate, characterized in that a dead end extending pore is formed at a tip extension portion of a vertical pore in a direction parallel to the thickness direction of the silicon electrode plate. Board.
シリコン電極板のプラズマ側からシリコン電極板の厚さ方向に非平行な方向に向かって形成された細孔（以下、傾斜細孔という）と、この傾斜細孔に接続しかつ冷却板側に抜けるように形成されたシリコン電極板の厚さ方向に平行な方向に向かって形成された垂直細孔からなる貫通細孔を有するシリコン電極板において、

前記シリコン電極板の厚さ方向に非平行な方向の傾斜細孔の先端延長部に、行止り延長細孔を形成してなることを特徴とする冷却板を損傷することのないプラズマエッチング用シリコン電極板。
Fine pores (hereinafter referred to as inclined fine pores) formed from the plasma side of the silicon electrode plate in a direction non-parallel to the thickness direction of the silicon electrode plate, and connected to the inclined fine pores and exit to the cooling plate side In the silicon electrode plate having through-holes composed of vertical pores formed in the direction parallel to the thickness direction of the silicon electrode plate formed as described above,

A silicon for plasma etching without damaging a cooling plate, characterized in that a dead-end extended pore is formed at a tip extension portion of an inclined pore in a direction not parallel to the thickness direction of the silicon electrode plate. Electrode plate.
シリコン電極板のプラズマ側からシリコン電極板の厚さ方向に非平行な方向に向かって形成された傾斜細孔と、この傾斜細孔に接続しかつこの傾斜細孔の方向と異なる方向のシリコン電極板の厚さ方向に非平行な方向に向かって冷却板側に出るように形成されている傾斜細孔からなる貫通細孔を有するシリコン電極板において、
前記プラズマ側からシリコン電極板の厚さ方向に非平行な方向に向かって形成された傾斜細孔の先端延長部に、行止り延長細孔を形成してなることを特徴とする冷却板を損傷することのないプラズマエッチング用シリコン電極板。 Inclined pores formed in a direction non-parallel to the thickness direction of the silicon electrode plate from the plasma side of the silicon electrode plate, and a silicon electrode connected to the inclined pore and in a direction different from the direction of the inclined pore In the silicon electrode plate having through pores composed of inclined pores formed so as to come out to the cooling plate side toward a direction non-parallel to the thickness direction of the plate,
Damage to the cooling plate, characterized in that a dead end extension pore is formed at the tip extension portion of the inclined pore formed in a direction non-parallel to the thickness direction of the silicon electrode plate from the plasma side. A silicon electrode plate for plasma etching that never happens. 前記シリコン電極板は、単結晶シリコン、多結晶シリコンまたは柱状晶シリコンからなることを特徴とする請求項１、２または３記載の冷却板を損傷することのないプラズマエッチング用シリコン電極板。 4. The silicon electrode plate for plasma etching without damaging the cooling plate according to claim 1, wherein the silicon electrode plate is made of single crystal silicon, polycrystalline silicon, or columnar crystal silicon.
JP2006233210A 2006-08-30 2006-08-30 Silicon electrode plate for plasma etching without damaging the cooling plate Active JP4849379B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006233210A JP4849379B2 (en) 2006-08-30 2006-08-30 Silicon electrode plate for plasma etching without damaging the cooling plate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006233210A JP4849379B2 (en) 2006-08-30 2006-08-30 Silicon electrode plate for plasma etching without damaging the cooling plate

Publications (3)

Publication Number Publication Date
JP2008060197A true JP2008060197A (en) 2008-03-13
JP2008060197A5 JP2008060197A5 (en) 2011-10-27
JP4849379B2 JP4849379B2 (en) 2012-01-11

Family

ID=39242616

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006233210A Active JP4849379B2 (en) 2006-08-30 2006-08-30 Silicon electrode plate for plasma etching without damaging the cooling plate

Country Status (1)

Country Link
JP (1) JP4849379B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012069868A (en) * 2010-09-27 2012-04-05 Tokyo Electron Ltd Electrode plate for plasma etching and plasma etching apparatus
JP2012199486A (en) * 2011-03-23 2012-10-18 Mitsubishi Materials Corp Electrode plate for plasma processing apparatus
JP2013110277A (en) * 2011-11-21 2013-06-06 Mitsubishi Materials Corp Electrode plate for plasma treatment apparatus
JP2013183025A (en) * 2012-03-01 2013-09-12 Mitsubishi Materials Corp Electrode plate for plasma processing device
JP2014212260A (en) * 2013-04-19 2014-11-13 三菱マテリアル株式会社 Electrode plate for plasma processing apparatus
JP2016036018A (en) * 2014-07-31 2016-03-17 東京エレクトロン株式会社 Plasma processing device and gas supply member

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1050678A (en) * 1996-08-02 1998-02-20 Ibiden Co Ltd Electrode plate for plasma etching
JP2007005491A (en) * 2005-06-22 2007-01-11 Tokyo Electron Ltd Electrode assembly and plasma processing apparatus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1050678A (en) * 1996-08-02 1998-02-20 Ibiden Co Ltd Electrode plate for plasma etching
JP2007005491A (en) * 2005-06-22 2007-01-11 Tokyo Electron Ltd Electrode assembly and plasma processing apparatus

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012069868A (en) * 2010-09-27 2012-04-05 Tokyo Electron Ltd Electrode plate for plasma etching and plasma etching apparatus
CN102420089A (en) * 2010-09-27 2012-04-18 东京毅力科创株式会社 Electrode plate for plasma etching and plasma etching apparatus
US9117635B2 (en) 2010-09-27 2015-08-25 Tokyo Electron Limited Electrode plate for plasma etching and plasma etching apparatus
TWI502618B (en) * 2010-09-27 2015-10-01 Tokyo Electron Ltd Electrode plate for plasma etching and plasma etching apparatus
KR101783886B1 (en) 2010-09-27 2017-10-10 도쿄엘렉트론가부시키가이샤 Electrode plate for plasma etching and plasma etching apparatus
US9818583B2 (en) 2010-09-27 2017-11-14 Tokyo Electron Limited Electrode plate for plasma etching and plasma etching apparatus
JP2012199486A (en) * 2011-03-23 2012-10-18 Mitsubishi Materials Corp Electrode plate for plasma processing apparatus
JP2013110277A (en) * 2011-11-21 2013-06-06 Mitsubishi Materials Corp Electrode plate for plasma treatment apparatus
JP2013183025A (en) * 2012-03-01 2013-09-12 Mitsubishi Materials Corp Electrode plate for plasma processing device
JP2014212260A (en) * 2013-04-19 2014-11-13 三菱マテリアル株式会社 Electrode plate for plasma processing apparatus
JP2016036018A (en) * 2014-07-31 2016-03-17 東京エレクトロン株式会社 Plasma processing device and gas supply member

Also Published As

Publication number Publication date
JP4849379B2 (en) 2012-01-11

Similar Documents

Publication Publication Date Title
JP4849379B2 (en) Silicon electrode plate for plasma etching without damaging the cooling plate
TWI227923B (en) Semiconductor device and its manufacturing method, circuit substrate and electronic machine
JP6349228B2 (en) Electrostatic chuck and base member used for the electrostatic chuck
JP2009218592A (en) Electrostatic chuck
JP4045592B2 (en) Silicon electrode plate for plasma etching
JP6421294B1 (en) Shower head machining tool and method for manufacturing shower head machining tool
JP2001102357A (en) Plasma etching electrode plate and manufacturing method therefor
JP2009038209A (en) Silicon electrode plate providing uniform etching
JP4883368B2 (en) Single crystal silicon electrode plate for plasma etching
JP5613904B2 (en) Electrode plate for plasma processing equipment
JP4863074B2 (en) Silicon electrode plate for plasma etching with excellent crack resistance
JP6110530B2 (en) Plasma etching equipment
JP4045591B2 (en) Electrode plate for plasma etching
JP2005033116A (en) Via hole, semiconductor device having via hole, and forming method of same via hole
JP2007220780A (en) Method of manufacturing semiconductor device
JP2016011243A (en) Method for producing ceramic member, and supporting tool
JP5019256B2 (en) Convex silicon electrode plate for plasma etching
JP5886214B2 (en) Plasma etching method
JP2009283732A (en) Circuit board, and electronic apparatus
JP6882131B2 (en) Sample holder
JP2010278172A (en) Multiple patterning circuit board, circuit board, and module using the same
JP2012222271A (en) Electrode plate for plasma processing apparatus
JP5742347B2 (en) Electrode plate for plasma processing equipment
JP2004006581A (en) Shower plate for plasma treatments and method of manufacturing the same
JP2009231701A (en) Cooling device for electronic apparatus

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20090331

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20090710

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110912

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20110926

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

R150 Certificate of patent or registration of utility model

Ref document number: 4849379

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20111009

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20141028

Year of fee payment: 3