JP2009033142A - 光電変換装置及び当該光電変換装置を具備する電子機器 - Google Patents
光電変換装置及び当該光電変換装置を具備する電子機器 Download PDFInfo
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- JP2009033142A JP2009033142A JP2008167716A JP2008167716A JP2009033142A JP 2009033142 A JP2009033142 A JP 2009033142A JP 2008167716 A JP2008167716 A JP 2008167716A JP 2008167716 A JP2008167716 A JP 2008167716A JP 2009033142 A JP2009033142 A JP 2009033142A
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Abstract
【解決手段】光電変換素子と、カレントミラー回路と、電界効果トランジスタと、を含む光電変換回路と、電圧検出回路と、を有し、カレントミラー回路は、光電変換素子に発生した光電流を増幅して出力する回路であり、カレントミラー回路で増幅された光電流が出力される出力端子は、電界効果トランジスタのドレイン端子及びゲート端子に接続され、電圧検出回路は、電界効果トランジスタのゲート端子に電気的に接続され、発生する電圧を検出する構成とする。
【選択図】図1
Description
(実施の形態1)
(実施の形態2)
(実施の形態3)
(実施の形態4)
(実施の形態5)
(実施の形態6)
(実施の形態7)
102 電圧検出回路
103 直流電源
104 光電変換素子
105 カレントミラー回路
106 nチャネル型トランジスタ
111 光電変換層
113 トランジスタ
121 端子電極
122 端子電極
136 pチャネル型トランジスタ
144 光電変換素子
145 カレントミラー回路
146 nチャネル型トランジスタ
156 pチャネル型トランジスタ
201 バッファ
310 基板
312 下地絶縁膜
313 ゲート絶縁膜
314 配線
315 配線
316 層間絶縁膜
317 層間絶縁膜
318 保護電極
319 配線
320 接続電極
324 封止層
331 島状半導体領域
334 ゲート電極
337 ドレイン領域
341 ドレイン電極
345 保護電極
346 保護電極
348 保護電極
350 端子電極
351 端子電極
360 基板
361 電極
362 電極
363 半田
364 半田
410 窒素雰囲気中
503 トランジスタ
511 金属膜
512 ゲート電極
514 ゲート絶縁膜
515 島状半導体領域
518 マスク
521 ドレイン領域
531 ドレイン電極
533 保護電極
536 保護電極
538 保護電極
601 筐体
602 筐体
603 筐体
604 筐体
701 本体(A)
702 本体(B)
703 筐体
704 操作キー
705 音声出力部
706 音声入力部
707 回路基板
708 表示パネル(A)
709 表示パネル(B)
710 蝶番
711 透光性材料部
712 光電変換装置
721 本体
722 筐体
723 表示パネル
724 操作キー
725 音声出力部
726 音声入力部
727 光電変換装置
728 光電変換装置
731 本体
732 筐体
733 表示部
734 キーボード
735 外部接続ポート
736 ポインティングデバイス
741 筐体
742 支持台
743 表示部
752 液晶層
753 バックライト
754 光電変換装置
761 筐体
762 液晶パネル
801 リリースボタン
802 メインスイッチ
803 ファインダ窓
804 フラッシュ
805 レンズ
806 鏡胴
807 筺体
811 ファインダ接眼窓
812 モニタ
813 操作ボタン
105A pチャネル型トランジスタ
105B pチャネル型トランジスタ
111i i型半導体層
111n n型半導体層
111p p型半導体層
145A nチャネル型トランジスタ
145B nチャネル型トランジスタ
751a 基板
751b 基板
752a 偏光フィルタ
752b 偏光フィルタ
1100 ガラス基板
1101 単結晶基板
1102 半導体膜
1103 イオンドーピング層
1122 圧着部材
Claims (9)
- 光電変換素子と、カレントミラー回路と、電界効果トランジスタと、を含む光電変換回路と、
電圧検出回路と、を有し、
前記カレントミラー回路は、前記光電変換素子に発生した光電流を増幅して出力する回路であり、
前記カレントミラー回路で増幅された光電流が出力される出力端子は、前記電界効果トランジスタのドレイン端子及びゲート端子に電気的に接続されており、
前記電圧検出回路は、前記電界効果トランジスタのゲート端子に電気的に接続され、発生する電圧を検出することを特徴とする光電変換装置。 - 光電変換素子と、カレントミラー回路と、電界効果トランジスタと、を含む光電変換回路と、
バッファと、
電圧検出回路と、を有し、
前記カレントミラー回路は、前記光電変換素子に発生した光電流を増幅して出力する回路であり、
前記カレントミラー回路で増幅された光電流が出力される出力端子は、前記電界効果トランジスタのドレイン端子及びゲート端子に電気的に接続されており、
前記バッファの入力端子は、前記電界効果トランジスタのゲート端子に電気的に接続され、発生する電圧を検出し、
前記電圧検出回路は、前記バッファの出力端子に電気的に接続されていることを特徴とする光電変換装置。 - 請求項2において、前記バッファは、出力端子が反転入力端子に電気的に接続されたオペアンプであり、
前記オペアンプの非反転入力端子には、前記電界効果トランジスタのゲート端子が電気的に接続されていることを特徴とする光電変換装置。 - 請求項1乃至3のいずれか一において、
前記光電変換素子は、p型半導体層、i型半導体層及びn型半導体層を有することを特徴とする光電変換装置。 - 請求項1乃至4のいずれか一において、
前記カレントミラー回路を構成するトランジスタは、pチャネル型トランジスタであることを特徴とする光電変換装置。 - 請求項1乃至5のいずれか一において、
前記電界効果トランジスタは、薄膜トランジスタであることを特徴とする光電変換装置。 - 請求項1乃至6のいずれか一において、
前記光電変換素子及び前記電界効果トランジスタは、透光性基板上に設けられていることを特徴とする光電変換装置。 - 請求項1乃至7のいずれか一において、
前記光電変換装置は、前記電界効果トランジスタを複数有し、
前記複数の電界効果トランジスタは、それぞれ電気的に並列に接続されていることを特徴とする光電変換装置。 - 請求項1乃至8に記載の光電変換装置を表示部に具備することを特徴とする電子機器。
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TW (1) | TWI453565B (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012099801A (ja) * | 2010-10-08 | 2012-05-24 | Semiconductor Energy Lab Co Ltd | 光電変換装置及びその動作方法 |
WO2014057806A1 (ja) * | 2012-10-12 | 2014-04-17 | シャープ株式会社 | 光センサおよび電子機器 |
JP2014515577A (ja) * | 2011-05-26 | 2014-06-30 | コンセホ・スペリオール・デ・インベスティガシオネス・シエンティフィカス | 動的視覚センサでの光センシングシステムを時間的に識別するための低ミスマッチ及び低消費のトランスインピーダンス利得回路 |
JP2014187075A (ja) * | 2013-03-21 | 2014-10-02 | Toshiba Corp | 光結合装置 |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008123119A1 (en) | 2007-03-26 | 2008-10-16 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and electronic device provided with the photoelectric conversion device |
WO2009014155A1 (en) | 2007-07-25 | 2009-01-29 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and electronic device having the same |
EP2075840B1 (en) * | 2007-12-28 | 2014-08-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for dicing a wafer with semiconductor elements formed thereon and corresponding device |
JP5317712B2 (ja) | 2008-01-22 | 2013-10-16 | 株式会社半導体エネルギー研究所 | 半導体装置及び半導体装置の作製方法 |
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WO2011111506A1 (en) * | 2010-03-12 | 2011-09-15 | Semiconductor Energy Laboratory Co., Ltd. | Method for driving circuit and method for driving display device |
US9209209B2 (en) | 2010-10-29 | 2015-12-08 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method for operating the same |
US9218511B2 (en) * | 2011-06-07 | 2015-12-22 | Verisiti, Inc. | Semiconductor device having features to prevent reverse engineering |
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JP6906978B2 (ja) | 2016-02-25 | 2021-07-21 | 株式会社半導体エネルギー研究所 | 半導体装置、半導体ウェハ、および電子機器 |
US10685983B2 (en) | 2016-11-11 | 2020-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Transistor, semiconductor device, and electronic device |
CN115580348B (zh) * | 2022-11-24 | 2023-04-21 | 厦门优迅高速芯片有限公司 | 光电流镜像监控电路 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08289205A (ja) * | 1995-04-13 | 1996-11-01 | Nissan Motor Co Ltd | 受光素子およびこれを用いた画像入力装置 |
US20050100977A1 (en) * | 2003-11-07 | 2005-05-12 | Yuh-Shyong Yang | Biochemical sensing device |
JP2005203783A (ja) * | 2004-01-12 | 2005-07-28 | Samsung Electronics Co Ltd | 光センサ及びこれを利用した表示装置 |
JP2007059889A (ja) * | 2005-07-27 | 2007-03-08 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JP2008270765A (ja) * | 2007-03-26 | 2008-11-06 | Semiconductor Energy Lab Co Ltd | 光電変換装置及び当該光電変換装置を具備する電子機器 |
Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4498001A (en) * | 1982-07-26 | 1985-02-05 | At&T Bell Laboratories | Transimpedance amplifier for optical receivers |
US5241575A (en) | 1989-12-21 | 1993-08-31 | Minolta Camera Kabushiki Kaisha | Solid-state image sensing device providing a logarithmically proportional output signal |
JP2836147B2 (ja) | 1989-12-21 | 1998-12-14 | ミノルタ株式会社 | 光電変換装置 |
US5369462A (en) * | 1992-06-09 | 1994-11-29 | Olympus Optical Co., Ltd. | Inclination detecting apparatus and camera for detecting hand shake using the same |
US5381146A (en) * | 1993-07-06 | 1995-01-10 | Digital Equipment Corporation | Voltage-tracking circuit and application in a track-and-hold amplifier |
US5801581A (en) * | 1996-01-31 | 1998-09-01 | Canon Kabushiki Kaisha | Comparison detection circuit |
JP3444093B2 (ja) | 1996-06-10 | 2003-09-08 | 株式会社デンソー | 光センサ回路 |
JP4044187B2 (ja) | 1997-10-20 | 2008-02-06 | 株式会社半導体エネルギー研究所 | アクティブマトリクス型表示装置およびその作製方法 |
US6287888B1 (en) | 1997-12-26 | 2001-09-11 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and process for producing photoelectric conversion device |
US6495816B1 (en) | 1999-04-30 | 2002-12-17 | Lockheed Martin Corporation | Method and apparatus for converting the output of a photodetector to a log voltage |
JP2001215550A (ja) | 2000-02-01 | 2001-08-10 | Canon Inc | 光電変換装置、調光回路およびcmosセンサ |
US6995753B2 (en) | 2000-06-06 | 2006-02-07 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method of manufacturing the same |
US7030551B2 (en) | 2000-08-10 | 2006-04-18 | Semiconductor Energy Laboratory Co., Ltd. | Area sensor and display apparatus provided with an area sensor |
US20040101309A1 (en) * | 2002-11-27 | 2004-05-27 | Beyette Fred R. | Optical communication imager |
JP2005129909A (ja) | 2003-09-19 | 2005-05-19 | Semiconductor Energy Lab Co Ltd | 光センサー装置および電子機器 |
US7253391B2 (en) | 2003-09-19 | 2007-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Optical sensor device and electronic apparatus |
CN100477240C (zh) | 2003-10-06 | 2009-04-08 | 株式会社半导体能源研究所 | 半导体器件以及制造该器件的方法 |
WO2005114749A1 (en) | 2004-05-21 | 2005-12-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US8704803B2 (en) | 2004-08-27 | 2014-04-22 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic appliance using the display device |
JP4817636B2 (ja) | 2004-10-04 | 2011-11-16 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
US7492028B2 (en) | 2005-02-18 | 2009-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and manufacturing method of the same, and a semiconductor device |
US7358590B2 (en) | 2005-03-31 | 2008-04-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
CN100592358C (zh) | 2005-05-20 | 2010-02-24 | 株式会社半导体能源研究所 | 显示装置和电子设备 |
EP1724844A2 (en) | 2005-05-20 | 2006-11-22 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device, manufacturing method thereof and semiconductor device |
JP4809715B2 (ja) | 2005-05-20 | 2011-11-09 | 株式会社半導体エネルギー研究所 | 光電変換装置及びその作製方法、並びに半導体装置 |
DE602006001686D1 (de) * | 2005-05-23 | 2008-08-21 | Semiconductor Energy Lab | Photoelektrische Umwandleranordnung und Verfahren zu ihrer Herstellung |
WO2007013534A1 (en) | 2005-07-27 | 2007-02-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
EP1949455A1 (en) | 2005-11-18 | 2008-07-30 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
WO2007125977A1 (en) | 2006-04-27 | 2007-11-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic appliance using the same |
US7791012B2 (en) | 2006-09-29 | 2010-09-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising photoelectric conversion element and high-potential and low-potential electrodes |
KR101447044B1 (ko) | 2006-10-31 | 2014-10-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 |
US8514165B2 (en) | 2006-12-28 | 2013-08-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8354724B2 (en) | 2007-03-26 | 2013-01-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
WO2009014155A1 (en) | 2007-07-25 | 2009-01-29 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and electronic device having the same |
-
2008
- 2008-06-12 KR KR1020080055056A patent/KR101401528B1/ko active IP Right Grant
- 2008-06-18 US US12/141,394 patent/US8431883B2/en active Active
- 2008-06-24 TW TW097123587A patent/TWI453565B/zh not_active IP Right Cessation
- 2008-06-26 JP JP2008167716A patent/JP2009033142A/ja not_active Withdrawn
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08289205A (ja) * | 1995-04-13 | 1996-11-01 | Nissan Motor Co Ltd | 受光素子およびこれを用いた画像入力装置 |
US20050100977A1 (en) * | 2003-11-07 | 2005-05-12 | Yuh-Shyong Yang | Biochemical sensing device |
JP2005203783A (ja) * | 2004-01-12 | 2005-07-28 | Samsung Electronics Co Ltd | 光センサ及びこれを利用した表示装置 |
JP2007059889A (ja) * | 2005-07-27 | 2007-03-08 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JP2008270765A (ja) * | 2007-03-26 | 2008-11-06 | Semiconductor Energy Lab Co Ltd | 光電変換装置及び当該光電変換装置を具備する電子機器 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012099801A (ja) * | 2010-10-08 | 2012-05-24 | Semiconductor Energy Lab Co Ltd | 光電変換装置及びその動作方法 |
JP2014515577A (ja) * | 2011-05-26 | 2014-06-30 | コンセホ・スペリオール・デ・インベスティガシオネス・シエンティフィカス | 動的視覚センサでの光センシングシステムを時間的に識別するための低ミスマッチ及び低消費のトランスインピーダンス利得回路 |
WO2014057806A1 (ja) * | 2012-10-12 | 2014-04-17 | シャープ株式会社 | 光センサおよび電子機器 |
CN104508837A (zh) * | 2012-10-12 | 2015-04-08 | 夏普株式会社 | 光传感器和电子设备 |
JP5797850B2 (ja) * | 2012-10-12 | 2015-10-21 | シャープ株式会社 | 光センサおよび電子機器 |
JP2014187075A (ja) * | 2013-03-21 | 2014-10-02 | Toshiba Corp | 光結合装置 |
US9297973B2 (en) | 2013-03-21 | 2016-03-29 | Kabushiki Kaisha Toshiba | Optical coupling device |
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US8431883B2 (en) | 2013-04-30 |
US20090001256A1 (en) | 2009-01-01 |
KR101401528B1 (ko) | 2014-06-03 |
TW200915039A (en) | 2009-04-01 |
TWI453565B (zh) | 2014-09-21 |
KR20090004509A (ko) | 2009-01-12 |
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