JP2009016817A - 放射ディテクタ、放射ディテクタ製造方法、および放射ディテクタを備える装置 - Google Patents
放射ディテクタ、放射ディテクタ製造方法、および放射ディテクタを備える装置 Download PDFInfo
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Abstract
【解決手段】放射ディテクタは放射感応性表面を有する。放射感応性表面は、10〜200nmの波長の放射および/または荷電粒子に感応する。放射ディテクタは、シリコン基板、ドーパント層、第1電極、および第2電極を有する。シリコン基板は、特定の導電タイプのドーピングプロファイルを有する第1表面側の表面領域内に設けられる。ドーパント層は、シリコン基板の第1表面側に設けられる。ドーパント層は、ドーパント材料の第1層と、第2層とを有する。第2層は拡散層であり、この拡散層は、シリコン基板の第1表面側の表面領域に接する。第1電極はドーパント層に接続される。第2電極はシリコン基板に接続される。
【選択図】図4
Description
Claims (23)
- 放射感応性表面を有する放射ディテクタであって、
ドーピングプロファイルを有する第1表面側に表面領域を有するシリコン基板、
前記シリコン基板の前記第1表面側に設けられ、ドーパント材料の第1層および第2層を含むドーパント層であって、前記第2層は、前記シリコン基板の前記第1表面側の前記表面領域に接する拡散層である、ドーパント層、
前記ドーパント層に接続された第1電極、および
前記シリコン基板に接続された第2電極
を備え、
前記シリコン基板の前記第1表面側の前記表面領域と前記第2層は、前記放射感応性表面を形成する、放射ディテクタ。 - 前記ドーピングプロファイルはp形導電性を提供し、前記ドーパント材料はドナー材料である、請求項1に記載の放射ディテクタ。
- 前記ドナー材料は、燐、砒素およびアンチモンからなる要素群の要素を含む、請求項2に記載の放射ディテクタ。
- 前記ドーピングプロファイルはn形導電性を提供し、前記ドーパント材料はアクセプタ材料である、請求項1に記載の放射ディテクタ。
- 前記アクセプタ材料は、ホウ素、ガリウム、アルミニウムおよびインジウムからなる要素群の要素を含む、請求項4に記載の放射ディテクタ。
- 前記第1層はホウ素層であり、前記第2層はBxSi1−x化合物(xは0から1の間の値を有する)の層である、請求項1に記載の放射ディテクタ。
- 前記第2層は1〜10nmの厚さを有する、請求項6に記載の放射ディテクタ。
- 前記第2層は10〜1000nmの厚さを有する、請求項6に記載の放射ディテクタ。
- 前記第1層は1〜20nmの厚さを有する、請求項6ないし8のいずれかに記載の放射ディテクタ。
- 前記シリコン基板は結晶性シリコンのエピタキシャル層を含み、前記ドーパント層は前記エピタキシャル層の表面上に設けられている、先行する請求項のいずれかに記載の放射ディテクタ。
- 前記第1電極は、前記ドーパント材料の第1層を部分的に覆う、先行する請求項のいずれかに記載の放射ディテクタ。
- 前記第1電極は導電性グリッドとして構成される、請求項11に記載の放射ディテクタ。
- 前記第1電極は、アルミニウム、窒化チタン、チタン、金、ニッケルおよびクロムからなる群から選択された1種類以上の金属材料を含む、請求項1に記載の放射ディテクタ。
- 前記シリコン基板は、前記第1表面側の反対側に第2表面側をさらに有し、前記第2電極は前記第2表面側に接続される、請求項1に記載の放射ディテクタ。
- 前記放射ディテクタは、第1領域および第2領域を含むディテクタ表面を有し、前記第1領域は、前記第1層が前記第1電極に接続されている領域であり、前記第2領域は、前記第1層が保護層に覆われている領域であって、前記保護層は、前記放射センサで測定されるべき前記放射を通過させるように配置された(11)である、先行する請求項のいずれかに記載の放射ディテクタ。
- 前記第2領域は、10〜25mm2の累積表面積を有する、請求項15に記載の放射ディテクタ。
- 前記放射感応性表面は、約10nm〜約200nmの間の波長を有する放射に感応する、先行する請求項のいずれかに記載の放射センサ。
- 前記放射感応性表面は、荷電粒子の放射に感応する、先行する請求項のいずれかに記載の放射センサ。
- 前記荷電粒子とは、約200eV〜約40keVの間のエネルギーを有する電子である、請求項18に記載の放射センサ。
- 前記放射センサのいずれかに従った放射センサを備えた、パターン付き放射ビームで基板を露光するためのリソグラフィ露光装置。
- 放射を検出するための放射ディテクタの製造方法であって、
第1表面側と、これと反対側の第2表面側とを有するシリコン基板であって、ドーピングプロファイルを有する前記第1表面側に表面領域を有するシリコン基板を設けること、
前記シリコン基板中に拡散層が形成されるように、そして前記第1表面の前記表面領域と前記第2層とが放射感応性表面を形成するように配置されるように、前記シリコン基板の前記第1表面の上にドーパント材料の層を堆積させ、ること、
第1領域および第2領域が形成されるように、導電性材料を含む第1接触部で前記ドーパント材料の層を部分的に覆って、前記ドーパント材料の層が、前記第1領域においては前記第1接触部の材料で覆われ、前記第2領域においては前記放射に露光可能なままとなるようにすること、および
前記シリコン基板の前記第2表面側に、導電性材料を含む第2接触部を堆積させること
を含む、方法。 - 前記第1接触部と前記第2接触部のうちの少なくとも一方が金属材料を含む、請求項21に記載の方法。
- 第1接触層で前記ドーパント材料の層を部分的に覆った後、前記放射センサで測定されるべき前記放射を通過させるように配置された保護層(11)で、前記第2領域にある前記ドーパント材料の層を覆うことをさらに含む、請求項21または22に記載の方法。
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TWI459148B (zh) | 2014-11-01 |
US7586108B2 (en) | 2009-09-08 |
JP2012165021A (ja) | 2012-08-30 |
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