JP5137708B2 - ディテクタ、ディテクタ製造方法、およびリソグラフィ装置 - Google Patents
ディテクタ、ディテクタ製造方法、およびリソグラフィ装置 Download PDFInfo
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
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- H01L31/0216—Coatings
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
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- H01L31/02—Details
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
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- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Description
Claims (29)
- ディテクタであって、
表面を有する基板と、
ドーパント材料の第1のドーパント層と、
前記基板の前記表面及び前記第1のドーパント層に接する拡散層である第2のドーパント層であって、前記第2のドーパント層のドーピング濃度を示すドーピングプロファイルは、前記基板の前記表面から前記第1のドーパント層へ増加している、第2のドーパント層と、
前記第1のドーパント層に接続された第1電極と、
前記基板に接続された第2電極と
を備え、
前記基板の前記表面の領域と前記第2のドーパント層は、前記放射感応性表面を形成し、
前記第2のドーパント層は、前記基板の前記表面に接する単結晶サブレイヤと、前記第1のドーパント層に接する非単結晶サブレイヤを含む、ディテクタ。 - 前記ドーピングプロファイルはp形導電性を提供し、前記ドーパント材料はドナー材料である、請求項1に記載のディテクタ。
- 前記ドナー材料は、燐、砒素およびアンチモンからなる要素群の要素を含む、請求項2に記載のディテクタ。
- 前記ドーピングプロファイルはn形導電性を提供し、前記ドーパント材料はアクセプタ材料である、請求項1に記載のディテクタ。
- 前記アクセプタ材料は、ホウ素、ガリウム、アルミニウムおよびインジウムからなる要素群の要素を含む、請求項4に記載のディテクタ。
- 前記第1のドーパント層はホウ素層であり、前記第2のドーパント層はBxSi1−x化合物(xは0から1の間の値を有する)の層である、請求項5に記載のディテクタ。
- 前記第2のドーパント層は1〜10nmの厚さを有する、請求項6に記載のディテクタ。
- 前記第2のドーパント層は10〜1000nmの厚さを有する、請求項6に記載のディテクタ。
- 前記第1のドーパント層は1〜20nmの厚さを有する、請求項6ないし8のいずれかに記載のディテクタ。
- 前記基板は結晶性シリコンのエピタキシャル層を含み、前記第2のドーパント層は前記エピタキシャル層の表面上に設けられている、請求項1ないし9のいずれかに記載のディテクタ。
- 前記第1電極は、前記第1のドーパント層を部分的に覆う、請求項1ないし10のいずれかに記載のディテクタ。
- 前記第1電極は導電性グリッドとして構成される、請求項11に記載のディテクタ。
- 前記第1電極は、アルミニウム、窒化チタン、チタン、金、ニッケルおよびクロムからなる群から選択された1種類以上の金属材料を含む、請求項1ないし12のいずれかに記載のディテクタ。
- 前記基板は、前記表面の反対側に第2表面をさらに有し、前記第2電極は前記第2表面に接続される、請求項1に記載のディテクタ。
- 前記ディテクタは、第1領域および第2領域を含むディテクタ表面を有し、前記第1領域は、前記第1のドーパント層が前記第1電極に接続されている領域であり、前記第2領域は、前記第1のドーパント層が保護層に覆われている領域であって、前記保護層は、前記ディテクタで測定されるべき前記放射を通過するように構成された、請求項1ないし14のいずれかに記載のディテクタ。
- 前記第2領域は、10〜25mm2の累積表面積を有する、請求項15に記載のディテクタ。
- 前記放射感応性表面は、電磁放射及び微粒子ビームの全ての種類のものに感応する、請求項1ないし16のいずれかに記載のディテクタ。
- 前記放射感応性表面は、約10nm〜約200nmの間の波長を有する放射に感応する、請求項17に記載のディテクタ。
- 前記放射感応性表面は、荷電粒子の放射に感応する、請求項1ないし18のいずれかに記載のディテクタ。
- 前記放射感応性表面は、低エネルギー荷電粒子に感応する、請求項19に記載のディテクタ。
- 前記荷電粒子とは、約200eV〜約40keVの間のエネルギーを有する電子である、請求項19又は20に記載のディテクタ。
- 前記放射感応性表面はプラズマ粒子に感応する、請求項19に記載のディテクタ。
- 前記プラズマ粒子はイオンである、請求項22に記載のディテクタ。
- 前記放射感応性表面は電子に感応する、請求項1ないし16のいずれかに記載のディテクタ。
- 請求項1ないし24記載のいずれかに従ったディテクタを備えた、パターン付き放射ビームで基板を露光するためのリソグラフィ装置。
- 放射を検出するためのディテクタの製造方法であって、
基板の表面の上にドーパント材料の第1層を堆積させて前記基板中に拡散層を形成し、これにより前記基板の前記表面における領域と第2層とが放射感応性表面を形成することであって、ここで前記第2層のドーピング濃度を示すドーピングプロファイルは、前記基板の前記表面から前記第1層へ増加しており、
第1領域および第2領域が形成されるように、導電性材料を含む第1接触部で前記ドーパント材料の前記第1層を部分的に覆って、前記ドーパント材料の前記第1層が、前記第1領域においては前記第1接触部の材料で覆われ、前記第2領域においては前記放射に露光可能なままとなるようにすること、および
前記基板の第2表面に、導電性材料を含む第2接触部を堆積させること
を含み、
前記第2層は、前記基板の前記表面に接する単結晶サブレイヤと、前記第1層に接する非単結晶サブレイヤを含む、方法。 - 前記第1接触部と前記第2接触部のうちの少なくとも一方が金属材料を含む、請求項26に記載の方法。
- 第1接触層で前記ドーパント材料の前記第1層を部分的に覆った後、前記ディテクタで測定されるべき前記放射を通過するように構成された保護層で、前記第2領域にある前記ドーパント材料の前記第1層を覆うことをさらに含む、請求項26または27に記載の方法。
- リソグラフィ装置であって、
放射ビームを生成するように構成された照明システムと、
前記放射ビームをパターンするように構成されたパターニングデバイスを支持するように構成されたサポートデバイスと、
基板上に前記パターン化されたビームを投影するように構成された投影システムと、
ディテクタと
を備え、
前記ディテクタは、
表面を有する基板と、
ドーパント材料の第1のドーパント層と、
前記基板の前記表面及び前記第1のドーパント層に接する拡散層である第2のドーパント層であって、前記第2のドーパント層のドーピング濃度を示すドーピングプロファイルは、前記基板の前記表面から前記第1のドーパント層へ増加している、第2のドーパント層と、
前記第1のドーパント層に接続された第1電極と、
前記基板に接続された第2電極と
を含み、
前記基板の前記表面の領域と前記第2のドーパント層は、前記放射感応性表面を形成し、
前記第2のドーパント層は、前記基板の前記表面に接する単結晶サブレイヤと、前記第1のドーパント層に接する非単結晶サブレイヤを含む、リソグラフィ装置。
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