JP2008545155A - 電界遮蔽体の使用による画素性能の向上 - Google Patents
電界遮蔽体の使用による画素性能の向上 Download PDFInfo
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/126—Shielding, e.g. light-blocking means over the TFTs
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136218—Shield electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/481—Insulated gate field-effect transistors [IGFETs] characterised by the gate conductors
- H10K10/482—Insulated gate field-effect transistors [IGFETs] characterised by the gate conductors the IGFET comprising multiple separately-addressable gate electrodes
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- Power Engineering (AREA)
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- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
層 材 料
基板* ポリカーボネート,ポリエチレンナフタレン ...
ゲートライン Au,Al,Cu,インジウム錫酸化物 ...
絶縁体層 フォトレジスト:HPR504,SU8 ...
データライン/画素パッド 金属:Au,Pd,Pt,ZnSnO3,
SnO2:F,Ag
半導体 ポリ−(チェニレンビニレン),ペンタセン...
* 多くのバリヤ層で被覆可能な母材
Claims (19)
- アクティブマトリクス方式ディスプレイ用の画素セルであって、
画素パッド(110)と
信号を選択的に前記画素パッドに結合して前記画素パッドを動作状態/非動作状態にする薄膜電界効果トランジスタ(106)と、
絶縁層(102)上に形成された電界遮蔽体(112)とを有し、前記電界遮蔽体は、前記電界遮蔽体が前記画素セル(110)の電極又は前記薄膜電界効果トランジスタの少なくとも一部分上に延びるように前記絶縁層を介して前記トランジスタに接続されている、画素セル。 - 前記薄膜電界効果トランジスタ(106)は、有機半導体材料を含む、請求項1に記載の画素セル。
- 前記薄膜電界効果トランジスタ(106)は、有機層間誘電体層を含む、請求項1に記載の画素セル。
- 前記薄膜電界効果トランジスタ(106)は、行電極(45)に印加された信号に従って列電極(47)を前記画素パッド(110)に選択的に接続する、請求項1に記載の画素セル。
- 前記電界遮蔽体は、前記薄膜電界効果トランジスタの性能を高めるために前記薄膜電界効果トランジスタと容量的関係をなすよう前記薄膜電界効果トランジスタの一部分上に延びている、請求項1に記載の画素セル。
- 前記電界遮蔽体(112)は、隣りの画素セルの薄膜電界効果トランジスタ(106)の性能を高めるために前記隣りの画素セルの前記薄膜電界効果トランジスタと容量的関係をなすよう前記隣りの画素セルの前記薄膜電界効果トランジスタの一部分上に延びている、請求項1に記載の画素セル。
- 前記電界遮蔽体(112)は、隣りの画素セルの画素パッド(110)の性能を高めるために前記隣りの画素セルの画素パッドと容量的関係をなすよう前記隣りの画素セルの前記画素パッドの一部分上に延びている、請求項1に記載の画素セル。
- アクティブマトリクス方式ディスプレイ用の画素セルであって、
画素パッド(110)と
信号を選択的に前記画素パッドに結合して前記画素パッドを動作状態/非動作状態にする薄膜電界効果トランジスタ(106)と、
絶縁層(102)上に形成された電界遮蔽体(112)とを有し、前記電界遮蔽体は、前記電界遮蔽体が前記画素パッドの電極又は前記薄膜電界効果トランジスタ(106)の少なくとも一部分上に延びて前記薄膜電界効果トランジスタの性能を高める第2のゲート(215)を形成するよう前記絶縁層を介して前記画素トランジスタに接続されている、画素セル。 - 前記薄膜電界効果トランジスタ(106)は、有機半導体材料を含む、請求項8に記載の画素セル。
- 前記薄膜電界効果トランジスタ(106)は、有機層間誘電体層を含む、請求項8に記載の画素セル。
- 前記薄膜電界効果トランジスタ(106)は、行電極(45)に印加された信号に従って列電極(47)を前記画素パッドに選択的に接続する、請求項8に記載の画素セル。
- 前記絶縁層(102)は、前記電界遮蔽体と前記薄膜電界効果トランジスタとの間の厚さが、前記電界遮蔽体と前記画素セルの他の領域との間の厚さとは異なる、請求項8に記載の画素セル。
- 前記絶縁層(102)は、前記電界遮蔽体と前記薄膜電界効果トランジスタとの間の厚さが、前記電界遮蔽体と前記画素セルの他の領域との間の厚さよりも小さい、請求項8に記載の画素セル。
- 前記電界遮蔽体(112)によって形成された前記第2のゲート(215)は、前記薄膜電界効果トランジスタのための導通電流を増大する、請求項8に記載の画素セル。
- アクティブマトリクス方式ディスプレイ用の画素を形成する方法であって、
絶縁体(102)を画素スタック(40)上に形成するステップを有し、前記画素スタックは、薄膜トランジスタ(106)、画素パッド(110)、及びアドレス指定ライン(45,47)を含み、
前記絶縁体上に形成された導電性層にパターン形成して前記画素パッドに接続される電界遮蔽体(112)を形成するステップを有し、前記電界遮蔽体は、前記電界遮蔽体が前記薄膜トランジスタの性能を高める第2のゲート(215)を形成するよう前記薄膜トランジスタの少なくとも一部分上に延びるように前記絶縁層を介して前記画素パッドに接続されている、方法。 - 前記画素パッド(110)及び前記電界遮蔽体(112)を動作状態にして前記薄膜電界効果トランジスタのための導通電流を増大させるステップを更に有する、請求項15に記載の方法。
- 前記絶縁体形成ステップは、前記薄膜トランジスタに関する性能基準に従って前記絶縁体(102)の厚さを設定するステップを含む、請求項15に記載の方法。
- 前記導電性層のパターン形成ステップは、第1の画素セルの電界遮蔽体(112)が隣りの画素セルの薄膜トランジスタ上に延びるように前記導電性層にパターン形成するステップを含む、請求項15に記載の方法。
- 前記導電性層のパターン形成ステップは、第1の画素セルの電界遮蔽体(112)が隣りの画素セルの画素パッド上に延びるように前記導電性層にパターン形成するステップを含む、請求項15に記載の方法。
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US69566505P | 2005-06-30 | 2005-06-30 | |
PCT/IB2006/052136 WO2007004130A2 (en) | 2005-06-30 | 2006-06-27 | Pixel perfromance improvement by use of a field-shield |
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US (2) | US7989806B2 (ja) |
EP (1) | EP1900032B1 (ja) |
JP (1) | JP2008545155A (ja) |
KR (1) | KR101256109B1 (ja) |
CN (1) | CN101288171B (ja) |
TW (1) | TWI413251B (ja) |
WO (1) | WO2007004130A2 (ja) |
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- 2006-06-27 EP EP06765915A patent/EP1900032B1/en not_active Not-in-force
- 2006-06-27 US US11/993,779 patent/US7989806B2/en not_active Expired - Fee Related
- 2006-06-27 CN CN2006800311165A patent/CN101288171B/zh not_active Expired - Fee Related
- 2006-06-27 JP JP2008519083A patent/JP2008545155A/ja active Pending
- 2006-06-27 WO PCT/IB2006/052136 patent/WO2007004130A2/en active Application Filing
- 2006-06-29 TW TW095123598A patent/TWI413251B/zh not_active IP Right Cessation
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2011
- 2011-06-23 US US13/167,673 patent/US8673665B2/en not_active Expired - Fee Related
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JP2012511173A (ja) * | 2008-12-05 | 2012-05-17 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | プラスチック基板を有する電子デバイス |
Also Published As
Publication number | Publication date |
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US20110256649A1 (en) | 2011-10-20 |
EP1900032A2 (en) | 2008-03-19 |
TWI413251B (zh) | 2013-10-21 |
CN101288171A (zh) | 2008-10-15 |
US8673665B2 (en) | 2014-03-18 |
TW200733377A (en) | 2007-09-01 |
EP1900032B1 (en) | 2012-06-06 |
KR20080065578A (ko) | 2008-07-14 |
KR101256109B1 (ko) | 2013-04-23 |
CN101288171B (zh) | 2011-06-22 |
WO2007004130A2 (en) | 2007-01-11 |
US20100163875A1 (en) | 2010-07-01 |
US7989806B2 (en) | 2011-08-02 |
WO2007004130A3 (en) | 2007-10-11 |
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