JP2008544552A5 - - Google Patents

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Publication number
JP2008544552A5
JP2008544552A5 JP2008518342A JP2008518342A JP2008544552A5 JP 2008544552 A5 JP2008544552 A5 JP 2008544552A5 JP 2008518342 A JP2008518342 A JP 2008518342A JP 2008518342 A JP2008518342 A JP 2008518342A JP 2008544552 A5 JP2008544552 A5 JP 2008544552A5
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JP
Japan
Prior art keywords
led
marker
package
polarized
orientation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2008518342A
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English (en)
Japanese (ja)
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JP5301988B2 (ja
JP2008544552A (ja
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Priority claimed from PCT/US2006/024078 external-priority patent/WO2007002151A2/en
Publication of JP2008544552A publication Critical patent/JP2008544552A/ja
Publication of JP2008544552A5 publication Critical patent/JP2008544552A5/ja
Application granted granted Critical
Publication of JP5301988B2 publication Critical patent/JP5301988B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2008518342A 2005-06-21 2006-06-21 偏光発光ダイオードの作製に関するパッケージ技術 Expired - Fee Related JP5301988B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US69251405P 2005-06-21 2005-06-21
US60/692,514 2005-06-21
PCT/US2006/024078 WO2007002151A2 (en) 2005-06-21 2006-06-21 Packaging technique for the fabrication of polarized light emitting diodes

Publications (3)

Publication Number Publication Date
JP2008544552A JP2008544552A (ja) 2008-12-04
JP2008544552A5 true JP2008544552A5 (OSRAM) 2009-07-16
JP5301988B2 JP5301988B2 (ja) 2013-09-25

Family

ID=37595773

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008518342A Expired - Fee Related JP5301988B2 (ja) 2005-06-21 2006-06-21 偏光発光ダイオードの作製に関するパッケージ技術

Country Status (6)

Country Link
US (2) US7518159B2 (OSRAM)
EP (1) EP1905088A4 (OSRAM)
JP (1) JP5301988B2 (OSRAM)
KR (1) KR101310332B1 (OSRAM)
TW (1) TWI397199B (OSRAM)
WO (1) WO2007002151A2 (OSRAM)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100032695A1 (en) * 2008-08-05 2010-02-11 The Regents Of The University Of California Tunable white light based on polarization sensitive light-emitting diodes
EP1905088A4 (en) * 2005-06-21 2012-11-21 Univ California CAPSULATORY TECHNIQUE FOR PRODUCING POLARIZED LIGHT-EMITTING DIODES
TWI533351B (zh) * 2006-12-11 2016-05-11 美國加利福尼亞大學董事會 高效能非極性第三族氮化物光學裝置之金屬有機化學氣相沈積生長
JP2009070893A (ja) * 2007-09-11 2009-04-02 Rohm Co Ltd 発光装置及びその製造方法
JP5263771B2 (ja) * 2007-11-12 2013-08-14 学校法人慶應義塾 面発光装置及び偏光光源
JP2009123803A (ja) * 2007-11-13 2009-06-04 Sanyo Electric Co Ltd 発光ダイオード装置
US8125579B2 (en) * 2007-12-19 2012-02-28 Texas Instruments Incorporated Polarized light emitting diode and use thereof
KR20100107054A (ko) * 2008-02-01 2010-10-04 더 리전츠 오브 더 유니버시티 오브 캘리포니아 웨이퍼 비축 절단에 의한 질화물 발광 다이오드들의 광학 편광의 강화
WO2009097622A1 (en) * 2008-02-01 2009-08-06 The Regents Of The University Of California Enhancement of optical polarization of nitride light-emitting diodes by increased indium incorporation
WO2010065163A2 (en) * 2008-06-05 2010-06-10 Soraa, Inc. Highly polarized white light source by combining blue led on semipolar or nonpolar gan with yellow led on semipolar or nonpolar gan
JP2010027924A (ja) * 2008-07-22 2010-02-04 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物発光ダイオード
US8284810B1 (en) 2008-08-04 2012-10-09 Soraa, Inc. Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods
US8247886B1 (en) * 2009-03-09 2012-08-21 Soraa, Inc. Polarization direction of optical devices using selected spatial configurations
US8299473B1 (en) 2009-04-07 2012-10-30 Soraa, Inc. Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors
EP2418696A4 (en) * 2009-04-09 2014-02-19 Panasonic Corp NITRIDE SEMICONDUCTOR LIGHT ELEMENT, LIGHTING DEVICE, LIQUID CRYSTAL DISPLAY DEVICE, METHOD FOR PRODUCING A NITRIDE SEMICONDUCTOR LIGHT ELEMENT AND METHOD FOR PRODUCING A LIGHTING DEVICE
US8791499B1 (en) 2009-05-27 2014-07-29 Soraa, Inc. GaN containing optical devices and method with ESD stability
WO2010141943A1 (en) * 2009-06-05 2010-12-09 The Regents Of The University Of California LONG WAVELENGTH NONPOLAR AND SEMIPOLAR (Al,Ga,In)N BASED LASER DIODES
US9000466B1 (en) 2010-08-23 2015-04-07 Soraa, Inc. Methods and devices for light extraction from a group III-nitride volumetric LED using surface and sidewall roughening
US8933644B2 (en) 2009-09-18 2015-01-13 Soraa, Inc. LED lamps with improved quality of light
US9293644B2 (en) 2009-09-18 2016-03-22 Soraa, Inc. Power light emitting diode and method with uniform current density operation
US9583678B2 (en) 2009-09-18 2017-02-28 Soraa, Inc. High-performance LED fabrication
CN107256915A (zh) 2009-09-18 2017-10-17 天空公司 发光二极管器件
CN102648535A (zh) 2009-12-09 2012-08-22 松下电器产业株式会社 氮化物系半导体发光元件、照明装置、液晶显示装置以及照明装置的制造方法
US8905588B2 (en) 2010-02-03 2014-12-09 Sorra, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US10147850B1 (en) 2010-02-03 2018-12-04 Soraa, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US20110182056A1 (en) * 2010-06-23 2011-07-28 Soraa, Inc. Quantum Dot Wavelength Conversion for Optical Devices Using Nonpolar or Semipolar Gallium Containing Materials
US20110186874A1 (en) * 2010-02-03 2011-08-04 Soraa, Inc. White Light Apparatus and Method
US8740413B1 (en) 2010-02-03 2014-06-03 Soraa, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US9450143B2 (en) 2010-06-18 2016-09-20 Soraa, Inc. Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices
US8313964B2 (en) 2010-06-18 2012-11-20 Soraa, Inc. Singulation method and resulting device of thick gallium and nitrogen containing substrates
US8293551B2 (en) 2010-06-18 2012-10-23 Soraa, Inc. Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices
US8786053B2 (en) 2011-01-24 2014-07-22 Soraa, Inc. Gallium-nitride-on-handle substrate materials and devices and method of manufacture
US8686431B2 (en) 2011-08-22 2014-04-01 Soraa, Inc. Gallium and nitrogen containing trilateral configuration for optical devices
US8912025B2 (en) 2011-11-23 2014-12-16 Soraa, Inc. Method for manufacture of bright GaN LEDs using a selective removal process
US9269876B2 (en) 2012-03-06 2016-02-23 Soraa, Inc. Light emitting diodes with low refractive index material layers to reduce light guiding effects
US8971368B1 (en) 2012-08-16 2015-03-03 Soraa Laser Diode, Inc. Laser devices having a gallium and nitrogen containing semipolar surface orientation
DE102012217967A1 (de) 2012-10-01 2014-04-03 Carl Zeiss Microscopy Gmbh Konfokales Mikroskop mit frei einstellbarer Probenabtastung
US9978904B2 (en) 2012-10-16 2018-05-22 Soraa, Inc. Indium gallium nitride light emitting devices
US8802471B1 (en) 2012-12-21 2014-08-12 Soraa, Inc. Contacts for an n-type gallium and nitrogen substrate for optical devices
US8994033B2 (en) 2013-07-09 2015-03-31 Soraa, Inc. Contacts for an n-type gallium and nitrogen substrate for optical devices
US9419189B1 (en) 2013-11-04 2016-08-16 Soraa, Inc. Small LED source with high brightness and high efficiency

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04291474A (ja) * 1991-03-20 1992-10-15 Tokyo Electric Co Ltd バーコードスキャナ
JP3390994B2 (ja) * 1992-05-12 2003-03-31 株式会社クラレ 電解コンデンサー用セパレーター
JPH06291155A (ja) * 1993-03-31 1994-10-18 Victor Co Of Japan Ltd ダイボンディング装置
JP3258221B2 (ja) * 1995-12-26 2002-02-18 沖電気工業株式会社 位置合わせ用の認識マークおよびその形成方法、認識マークおよび発光部の形成の兼用マスク、位置合わせ用の認識マークを用いた位置合わせ方法
JP3816176B2 (ja) * 1996-02-23 2006-08-30 富士通株式会社 半導体発光素子及び光半導体装置
US6072197A (en) * 1996-02-23 2000-06-06 Fujitsu Limited Semiconductor light emitting device with an active layer made of semiconductor having uniaxial anisotropy
JP3599917B2 (ja) * 1996-09-30 2004-12-08 三洋電機株式会社 半導体レーザ装置
JP3235571B2 (ja) * 1998-09-03 2001-12-04 日本電気株式会社 活性層と位置決めマークとの相対位置を測定する測定方法
JP4296644B2 (ja) * 1999-01-29 2009-07-15 豊田合成株式会社 発光ダイオード
US20020123163A1 (en) * 2000-04-24 2002-09-05 Takehiro Fujii Edge-emitting light-emitting semiconductor device and method of manufacture thereof
US7301199B2 (en) * 2000-08-22 2007-11-27 President And Fellows Of Harvard College Nanoscale wires and related devices
JP3722693B2 (ja) * 2000-11-28 2005-11-30 シャープ株式会社 半導体レーザ素子及びその製造方法
US7808011B2 (en) 2004-03-19 2010-10-05 Koninklijke Philips Electronics N.V. Semiconductor light emitting devices including in-plane light emitting layers
TWI233220B (en) * 2004-06-18 2005-05-21 Chi Mei Optoelectronics Corp Light emitting diode package
EP1905088A4 (en) * 2005-06-21 2012-11-21 Univ California CAPSULATORY TECHNIQUE FOR PRODUCING POLARIZED LIGHT-EMITTING DIODES

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