JP2008533703A - Lppのeuv駆動レーザ - Google Patents
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Abstract
【解決手段】固体シードレーザ主発振器レーザと駆動レーザ出力光ビームを生成するガス放電エキシマレーザ利得発生器とを含むEUV駆動レーザシステムを含むことができる装置及び方法。固体シードレーザは、同調可能とすることができる第3高調波Nd:YLFレーザを含むことができる。ガス放電エキシマ利得発生器レーザは、XeFエキシマレーザ電力増幅器又は電力発振器を含むことができる。固体レーザは、固体レーザを含むレーザ結晶の温度を変えることにより、又は波長選択要素、例えばリオ・フィルタ又はエタロンを利用することによって同調される同調可能レーザを含むことができる。
【選択図】図4
Description
本出願は、2005年12月29日出願の「LPPのEUV駆動レーザ」という名称の米国特許出願第11/324,104号に対する優先権を請求するものであり、この出願は、開示内容が本明細書において引用により組み込まれている代理人整理番号第2004−0107−01号である2005年2月28日出願の「LPPのEUV駆動レーザ」という名称の米国特許仮出願出願番号第60/657,606号に対する優先権を請求し、かつ開示内容が本明細書において引用により組み込まれている本出願の本出願人に譲渡された2004年11月1日出願の「LPPのEUV光源」という名称の現在特許出願中の米国特許出願出願番号第10/979,919号、2004年2月18日出願の「超高エネルギ高安定性ガス放電レーザ表面処理システム」という名称の第10/781,251号、及び2004年12月22日出願の「EUV光源光学要素」という名称の第11/021,261号の一部継続出願である。
本出願人は、例えば集積回路リソグラフィ処理用途及び他の高電力高安定性用途、例えばアモルファスシリコンをレーザ焼鈍して、例えばフラットパネルディスプレイのようなために薄膜トランジスタをより良好に形成することができるより大きな長形結晶を有する結晶化シリコンを形成することにより、例えば薄膜トランジスタを形成するために、例えば低温ポリシリコン(LTPS)形成のための例えばレーザ生成プラズマ(LPP)極紫外線(EUV)又は軟X線光源に有用なレーザシステム、例えばエキシマガス放電レーザシステム、例えばXeF高電力レーザシステムの効率及びビーム品質に関する改良を提案する。また、この改良は、例えばシステム長寿命化及び消耗品、例えば光学要素及びレーザチャンバの経費の低減による経費低減に関連するものである。
利得モジュール内の通過回数は、例えばシステムの物理的制約事項のために、3回通過PA手法を超えて大きく上げることはできないと考えられる。従って、本出願人は、本発明の実施形態の態様により、MOパルスエネルギの約2mJが実際的なMOPA設計に必要であろうと既に判断している。従って、本発明の実施形態の態様によれば、「主発振電力発振器(MOPO)」手法を用いると、MOパルスエネルギ所要量を更に低減する別の方法を得ることができる。MOPO構成の考えられる設定を図14に例示的に示している。MO150とPO16XeF利得モジュールは、上述のMOPA構成として同じガス放電チャンバ技術に基づくものとすることができる。空間フィルタ170を使用して、MO出力のビーム品質、例えば集束性及び空間的ビーム品質のような例えばビーム品質を改善することができる。
上述の手法は、MOPOシステムにも同様に機能することになる。このような場合のMOレーザの最小エネルギ所要量は、更に大幅に低減される。
効率的なUVのMOPAシステムは、固体主発振器(MO)、例えば図2に示す60又は図4に示す102、及び例えばガス放電増幅器レーザ、例えば図2又は図4に示すような例えばXeFガス放電電力増幅器(PA)又は図14に示す電力発振器(PO)から成る。このようなシステムの利点は、例えば固体レーザビームの品質パラメータと、エキシマPA出力の高エネルギ及び短パルス持続時間とを兼ね備える点であるとすることができる。MO手法に関する好ましい選択肢は、当業者によって理解されるように、小さなスポットにかつ高い位置決め安定性で比較的簡単に集束させることができるように十分な高い空間的ビーム品質を有するビームを供給するダイオード励起レーザ(DPSS)である。
XeF媒質の利得スペクトルは、3分枝構造を有するものであり、図1に示している。
Nd:YLFレーザの作動波長は、オフセットしているが、例えば上述のように、選択的な空洞を用いてXeF電力増幅器/発振器の2つの強力な351nm線に適合するように同調することができる。しかし、同じMOでシード光を供給することができない約353nmの別の強力なXeF利得線がある。エキシマレーザ媒質の利得値は非常に高いので、MO60ビームによる例えば約351nmでのPA70に対する非常に高い効率的なシード光の供給は、約352nmでの大きな利得分枝が抑制された場合、最初に本発明の実施形態の態様に従って達成することができる。そうでなければ、システムのビーム品質及び効率が損なわれる可能性がある。
本発明の実施形態の態様によれば、適切なレーザアーキテクチャは、例えば2つの6kHz、100%負荷サイクル(DC)利得モジュールによる2チャンネル手法に基づく高繰返し数作動を含むことができる。MOPA及びMOPOの両方の光学的方法を採用することができる。例えば、固体ダイオード励起主発振器によって高いビーム品質と12kHzの繰返し数を達成することができる。
ここで図14を参照すると、MOPA抽出効率がグラフで示されており、単一通過PA抽出に関しては、効率は3.5%近くであり、3回通過XeFのPA抽出に関しては、効率は3%を超える。3回通過PAの抽出効率は、単一通過の場合よりも低いが、単一通過に関しては、増幅は3回通過の各々に発生するために、3回通過PAに対して約1mJ入力と同じ全体出力を得るためには30mJ辺りをPAに入力すべきである。
図15は、効率的なPOシード光が明らかにされ、85mJMOPA出力が達成されたPO構成の評価を示している。MOシード光エネルギ要件は、〜30uJであることが既に示されており、当業者によって理解されるように、POの様々な構成を利用することができる。
図17、図18A、図18Bは、XeFのMOPAビーム発散の測定と結果を示しており、図17は、遠視野プロフィールを例えばCCDカメラで最小スポットで取得することができる実験用設定を示しており、図18Aと図18Bは、ビームプロフィールを示している。MOPAビーム発散は、図18Aと図18Bと以下の表IIに示すように、MO102ビーム発散で判断されることが示されている。
図20は、下表の表IVによって更に表されるような変換エネルギの測定結果と共に2次元でのレーザ強度に伴うプラズマ源サイズの変動をグラフ形式で示している。
イオンエネルギに関する要約を、下表の表VIIに示している。
104、106 エキシマレーザチャンバ
112 遅延発生器
Claims (18)
- 固体シードレーザ主発振器レーザと、
駆動レーザ出力光ビームを生成するガス放電エキシマレーザ利得発生器レーザと、
を含むことを特徴とするEUV駆動レーザシステム。 - 前記固体シードレーザは、第3高調波Nd:YLFレーザを含む、
ことを更に含むことを特徴とする請求項1に記載の装置。 - 前記固体シードレーザは、同調可能である、
ことを更に含むことを特徴とする請求項2に記載の装置。 - 前記ガス放電エキシマ利得発生器レーザは、XeFエキシマレーザ電力増幅器又は電力発振器を含む、
ことを更に含むことを特徴とする請求項1に記載の装置。 - 前記ガス放電利得発生器レーザは、XeFエキシマレーザ電力増幅器又は電力発振器を含む、
ことを更に含むことを特徴とする請求項2に記載の装置。 - 前記ガス放電エキシマ利得発生器レーザは、XeFエキシマレーザ電力増幅器又は電力発振器を含む、
ことを更に含むことを特徴とする請求項3に記載の装置。 - 前記固体レーザは、該固体レーザを含むレーザ結晶の温度を変えることによって同調される同調可能レーザを含む、
ことを更に含むことを特徴とする請求項4に記載の装置。 - 前記固体レーザは、該固体レーザを含むレーザ結晶の温度を変えることによって同調される同調可能レーザを含む、
ことを更に含むことを特徴とする請求項5に記載の装置。 - 前記固体レーザは、該固体レーザを含むレーザ結晶の温度を変えることによって同調される同調可能レーザを含む、
ことを更に含むことを特徴とする請求項6に記載の装置。 - 前記固体レーザは、波長選択要素を利用することによって同調される同調可能レーザを含む、
ことを更に含むことを特徴とする請求項5に記載の装置。 - 前記固体レーザは、波長選択要素を利用することによって同調される同調可能レーザを含む、
ことを更に含むことを特徴とする請求項6に記載の装置。 - 前記固体レーザは、波長選択要素を利用することによって同調される同調可能レーザを含む、
ことを更に含むことを特徴とする請求項7に記載の装置。 - 前記波長選択要素は、リオ・フィルタを含む、
ことを更に含むことを特徴とする請求項10に記載の装置。 - 前記波長選択要素は、リオ・フィルタを含む、
ことを更に含むことを特徴とする請求項11に記載の装置。 - 前記波長選択要素は、リオ・フィルタを含む、
ことを更に含むことを特徴とする請求項12に記載の装置。 - 前記波長選択要素は、エタロンを含む、
ことを更に含むことを特徴とする請求項10に記載の装置。 - 前記波長選択要素は、エタロンを含む、
ことを更に含むことを特徴とする請求項11に記載の装置。 - 前記波長選択要素は、エタロンを含む、
ことを更に含むことを特徴とする請求項12に記載の装置。
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US65760605P | 2005-02-28 | 2005-02-28 | |
US11/324,104 US20060146906A1 (en) | 2004-02-18 | 2005-12-29 | LLP EUV drive laser |
PCT/US2006/006597 WO2006093826A2 (en) | 2005-02-28 | 2006-02-22 | Lpp euv drive laser |
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JP2008533703A true JP2008533703A (ja) | 2008-08-21 |
JP2008533703A5 JP2008533703A5 (ja) | 2009-04-09 |
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JP2007558082A Pending JP2008533703A (ja) | 2005-02-28 | 2006-02-22 | Lppのeuv駆動レーザ |
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US (1) | US20060146906A1 (ja) |
EP (1) | EP1861903A4 (ja) |
JP (1) | JP2008533703A (ja) |
KR (1) | KR20070114199A (ja) |
WO (1) | WO2006093826A2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007129066A (ja) * | 2005-11-04 | 2007-05-24 | Univ Of Miyazaki | 極端紫外光発生方法および極端紫外光発生装置 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7491954B2 (en) * | 2006-10-13 | 2009-02-17 | Cymer, Inc. | Drive laser delivery systems for EUV light source |
US8654438B2 (en) * | 2010-06-24 | 2014-02-18 | Cymer, Llc | Master oscillator-power amplifier drive laser with pre-pulse for EUV light source |
US7659529B2 (en) * | 2007-04-13 | 2010-02-09 | Cymer, Inc. | Method and apparatus for vibration reduction in laser system line narrowing unit wavelength selection optical element |
US8283643B2 (en) * | 2008-11-24 | 2012-10-09 | Cymer, Inc. | Systems and methods for drive laser beam delivery in an EUV light source |
CN104577684B (zh) * | 2014-12-30 | 2018-03-23 | 中国科学院光电研究院 | 采用双通结构的双腔准分子激光器 |
US10663866B2 (en) * | 2016-09-20 | 2020-05-26 | Asml Netherlands B.V. | Wavelength-based optical filtering |
CN110190492B (zh) * | 2019-04-11 | 2021-04-13 | 北京盛镭科技有限公司 | 激光放大器 |
CN113122801A (zh) * | 2019-12-30 | 2021-07-16 | 华为技术有限公司 | 一种制备压电陶瓷薄膜的方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0575196A (ja) * | 1991-02-28 | 1993-03-26 | Amoco Corp | 単一周波数の周波数2倍化レーザ及び単一周波数の緑色又は青色光を発生する方法 |
JPH06120593A (ja) * | 1992-09-30 | 1994-04-28 | Nippon Steel Corp | 固体レーザ装置 |
JP2002151779A (ja) * | 2000-08-28 | 2002-05-24 | Komatsu Ltd | レーザ装置及びシード光の最適化方法 |
Family Cites Families (101)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2759106A (en) * | 1951-05-25 | 1956-08-14 | Wolter Hans | Optical image-forming mirror system providing for grazing incidence of rays |
US3279176A (en) * | 1959-07-31 | 1966-10-18 | North American Aviation Inc | Ion rocket engine |
US3150483A (en) * | 1962-05-10 | 1964-09-29 | Aerospace Corp | Plasma generator and accelerator |
US3232046A (en) * | 1962-06-06 | 1966-02-01 | Aerospace Corp | Plasma generator and propulsion exhaust system |
US3746870A (en) * | 1970-12-21 | 1973-07-17 | Gen Electric | Coated light conduit |
US3746860A (en) * | 1972-02-17 | 1973-07-17 | J Stettler | Soft x-ray generator assisted by laser |
DE2403501C3 (de) * | 1974-01-25 | 1979-02-22 | Fa. Carl Zeiss, 7920 Heidenheim | Verfahren zur Regelung der Phasenanpassung einer kohärenten Sekundärstrahlung in einem nichtlinearen Kristall |
US3969628A (en) * | 1974-04-04 | 1976-07-13 | The United States Of America As Represented By The Secretary Of The Army | Intense, energetic electron beam assisted X-ray generator |
US4042848A (en) * | 1974-05-17 | 1977-08-16 | Ja Hyun Lee | Hypocycloidal pinch device |
US3946332A (en) * | 1974-06-13 | 1976-03-23 | Samis Michael A | High power density continuous wave plasma glow jet laser system |
US3961197A (en) * | 1974-08-21 | 1976-06-01 | The United States Of America As Represented By The United States Energy Research And Development Administration | X-ray generator |
US3960473A (en) * | 1975-02-06 | 1976-06-01 | The Glastic Corporation | Die structure for forming a serrated rod |
US4223279A (en) * | 1977-07-18 | 1980-09-16 | Mathematical Sciences Northwest, Inc. | Pulsed electric discharge laser utilizing water dielectric blumlein transmission line |
US4162160A (en) * | 1977-08-25 | 1979-07-24 | Fansteel Inc. | Electrical contact material and method for making the same |
US4143275A (en) * | 1977-09-28 | 1979-03-06 | Battelle Memorial Institute | Applying radiation |
US4203393A (en) * | 1979-01-04 | 1980-05-20 | Ford Motor Company | Plasma jet ignition engine and method |
JPS5756668A (en) * | 1980-09-18 | 1982-04-05 | Nissan Motor Co Ltd | Plasma igniter |
US4538291A (en) * | 1981-11-09 | 1985-08-27 | Kabushiki Kaisha Suwa Seikosha | X-ray source |
US4455658A (en) * | 1982-04-20 | 1984-06-19 | Sutter Jr Leroy V | Coupling circuit for use with a transversely excited gas laser |
US4536884A (en) * | 1982-09-20 | 1985-08-20 | Eaton Corporation | Plasma pinch X-ray apparatus |
US4618971A (en) * | 1982-09-20 | 1986-10-21 | Eaton Corporation | X-ray lithography system |
US4504964A (en) * | 1982-09-20 | 1985-03-12 | Eaton Corporation | Laser beam plasma pinch X-ray system |
US4507588A (en) * | 1983-02-28 | 1985-03-26 | Board Of Trustees Operating Michigan State University | Ion generating apparatus and method for the use thereof |
DE3332711A1 (de) * | 1983-09-10 | 1985-03-28 | Fa. Carl Zeiss, 7920 Heidenheim | Vorrichtung zur erzeugung einer plasmaquelle mit hoher strahlungsintensitaet im roentgenbereich |
JPS60175351A (ja) * | 1984-02-14 | 1985-09-09 | Nippon Telegr & Teleph Corp <Ntt> | X線発生装置およびx線露光法 |
DE3406677A1 (de) * | 1984-02-24 | 1985-09-05 | Fa. Carl Zeiss, 7920 Heidenheim | Einrichtung zur kompensation der auswanderung eines laserstrahls |
US4609876A (en) * | 1984-04-26 | 1986-09-02 | Canadian Patents And Development Limited | Short radiation pulse generation |
US4837794A (en) * | 1984-10-12 | 1989-06-06 | Maxwell Laboratories Inc. | Filter apparatus for use with an x-ray source |
US4606034A (en) * | 1985-02-19 | 1986-08-12 | Board Of Trustees, University Of Illinois | Enhanced laser power output |
US4774914A (en) * | 1985-09-24 | 1988-10-04 | Combustion Electromagnetics, Inc. | Electromagnetic ignition--an ignition system producing a large size and intense capacitive and inductive spark with an intense electromagnetic field feeding the spark |
CA1239487A (en) * | 1985-10-03 | 1988-07-19 | National Research Council Of Canada | Multiple vacuum arc derived plasma pinch x-ray source |
CA1239486A (en) * | 1985-10-03 | 1988-07-19 | Rajendra P. Gupta | Gas discharge derived annular plasma pinch x-ray source |
US5315611A (en) * | 1986-09-25 | 1994-05-24 | The United States Of America As Represented By The United States Department Of Energy | High average power magnetic modulator for metal vapor lasers |
US5189678A (en) * | 1986-09-29 | 1993-02-23 | The United States Of America As Represented By The United States Department Of Energy | Coupling apparatus for a metal vapor laser |
US4959840A (en) * | 1988-01-15 | 1990-09-25 | Cymer Laser Technologies | Compact excimer laser including an electrode mounted in insulating relationship to wall of the laser |
US5023884A (en) * | 1988-01-15 | 1991-06-11 | Cymer Laser Technologies | Compact excimer laser |
US5025446A (en) * | 1988-04-01 | 1991-06-18 | Laserscope | Intra-cavity beam relay for optical harmonic generation |
US4928080A (en) * | 1989-06-23 | 1990-05-22 | General Electric Company | Molded case circuit breaker line terminal plug |
DE3927089C1 (ja) * | 1989-08-17 | 1991-04-25 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 8000 Muenchen, De | |
US5102776A (en) * | 1989-11-09 | 1992-04-07 | Cornell Research Foundation, Inc. | Method and apparatus for microlithography using x-pinch x-ray source |
US5027076A (en) * | 1990-01-29 | 1991-06-25 | Ball Corporation | Open cage density sensor |
US5126638A (en) * | 1991-05-13 | 1992-06-30 | Maxwell Laboratories, Inc. | Coaxial pseudospark discharge switch |
US5142166A (en) * | 1991-10-16 | 1992-08-25 | Science Research Laboratory, Inc. | High voltage pulsed power source |
JPH0816720B2 (ja) * | 1992-04-21 | 1996-02-21 | 日本航空電子工業株式会社 | 軟x線多層膜反射鏡 |
JPH06124913A (ja) * | 1992-06-26 | 1994-05-06 | Semiconductor Energy Lab Co Ltd | レーザー処理方法 |
US5329398A (en) * | 1992-11-05 | 1994-07-12 | Novatec Laser Systems, Inc. | Single grating laser pulse stretcher and compressor |
US5643801A (en) * | 1992-11-06 | 1997-07-01 | Semiconductor Energy Laboratory Co., Ltd. | Laser processing method and alignment |
US5359620A (en) * | 1992-11-12 | 1994-10-25 | Cymer Laser Technologies | Apparatus for, and method of, maintaining a clean window in a laser |
US5411224A (en) * | 1993-04-08 | 1995-05-02 | Dearman; Raymond M. | Guard for jet engine |
US5313481A (en) * | 1993-09-29 | 1994-05-17 | The United States Of America As Represented By The United States Department Of Energy | Copper laser modulator driving assembly including a magnetic compression laser |
US5448580A (en) * | 1994-07-05 | 1995-09-05 | The United States Of America As Represented By The United States Department Of Energy | Air and water cooled modulator |
US5504795A (en) * | 1995-02-06 | 1996-04-02 | Plex Corporation | Plasma X-ray source |
JP3041540B2 (ja) * | 1995-02-17 | 2000-05-15 | サイマー・インコーポレーテッド | パルス電力生成回路およびパルス電力を生成する方法 |
US5830336A (en) * | 1995-12-05 | 1998-11-03 | Minnesota Mining And Manufacturing Company | Sputtering of lithium |
US5863017A (en) * | 1996-01-05 | 1999-01-26 | Cymer, Inc. | Stabilized laser platform and module interface |
JPH10190105A (ja) * | 1996-12-25 | 1998-07-21 | Fuji Photo Film Co Ltd | 半導体発光装置 |
US6031241A (en) * | 1997-03-11 | 2000-02-29 | University Of Central Florida | Capillary discharge extreme ultraviolet lamp source for EUV microlithography and other related applications |
US5963616A (en) * | 1997-03-11 | 1999-10-05 | University Of Central Florida | Configurations, materials and wavelengths for EUV lithium plasma discharge lamps |
JP3385898B2 (ja) * | 1997-03-24 | 2003-03-10 | 安藤電気株式会社 | 可変波長半導体レーザ光源 |
US5936988A (en) * | 1997-12-15 | 1999-08-10 | Cymer, Inc. | High pulse rate pulse power system |
US5991324A (en) * | 1998-03-11 | 1999-11-23 | Cymer, Inc. | Reliable. modular, production quality narrow-band KRF excimer laser |
US5866871A (en) * | 1997-04-28 | 1999-02-02 | Birx; Daniel | Plasma gun and methods for the use thereof |
US5763930A (en) * | 1997-05-12 | 1998-06-09 | Cymer, Inc. | Plasma focus high energy photon source |
US6064072A (en) * | 1997-05-12 | 2000-05-16 | Cymer, Inc. | Plasma focus high energy photon source |
US6452199B1 (en) * | 1997-05-12 | 2002-09-17 | Cymer, Inc. | Plasma focus high energy photon source with blast shield |
US6566668B2 (en) * | 1997-05-12 | 2003-05-20 | Cymer, Inc. | Plasma focus light source with tandem ellipsoidal mirror units |
US6744060B2 (en) * | 1997-05-12 | 2004-06-01 | Cymer, Inc. | Pulse power system for extreme ultraviolet and x-ray sources |
US6586757B2 (en) * | 1997-05-12 | 2003-07-01 | Cymer, Inc. | Plasma focus light source with active and buffer gas control |
US6566667B1 (en) * | 1997-05-12 | 2003-05-20 | Cymer, Inc. | Plasma focus light source with improved pulse power system |
US6094448A (en) * | 1997-07-01 | 2000-07-25 | Cymer, Inc. | Grating assembly with bi-directional bandwidth control |
US6018537A (en) * | 1997-07-18 | 2000-01-25 | Cymer, Inc. | Reliable, modular, production quality narrow-band high rep rate F2 laser |
US6757316B2 (en) * | 1999-12-27 | 2004-06-29 | Cymer, Inc. | Four KHz gas discharge laser |
US6067306A (en) * | 1997-08-08 | 2000-05-23 | Cymer, Inc. | Laser-illuminated stepper or scanner with energy sensor feedback |
US5953360A (en) * | 1997-10-24 | 1999-09-14 | Synrad, Inc. | All metal electrode sealed gas laser |
US5978406A (en) * | 1998-01-30 | 1999-11-02 | Cymer, Inc. | Fluorine control system for excimer lasers |
US6016325A (en) * | 1998-04-27 | 2000-01-18 | Cymer, Inc. | Magnetic modulator voltage and temperature timing compensation circuit |
US6580517B2 (en) * | 2000-03-01 | 2003-06-17 | Lambda Physik Ag | Absolute wavelength calibration of lithography laser using multiple element or tandem see through hollow cathode lamp |
US20020186741A1 (en) * | 1998-06-04 | 2002-12-12 | Lambda Physik Ag | Very narrow band excimer or molecular fluorine laser |
US6618421B2 (en) * | 1998-07-18 | 2003-09-09 | Cymer, Inc. | High repetition rate gas discharge laser with precise pulse timing control |
US6067311A (en) * | 1998-09-04 | 2000-05-23 | Cymer, Inc. | Excimer laser with pulse multiplier |
US6567450B2 (en) * | 1999-12-10 | 2003-05-20 | Cymer, Inc. | Very narrow band, two chamber, high rep rate gas discharge laser system |
US6031598A (en) * | 1998-09-25 | 2000-02-29 | Euv Llc | Extreme ultraviolet lithography machine |
US6393042B1 (en) * | 1999-03-08 | 2002-05-21 | Semiconductor Energy Laboratory Co., Ltd. | Beam homogenizer and laser irradiation apparatus |
US6381257B1 (en) * | 1999-09-27 | 2002-04-30 | Cymer, Inc. | Very narrow band injection seeded F2 lithography laser |
US6414979B2 (en) * | 2000-06-09 | 2002-07-02 | Cymer, Inc. | Gas discharge laser with blade-dielectric electrode |
US6549551B2 (en) * | 1999-09-27 | 2003-04-15 | Cymer, Inc. | Injection seeded laser with precise timing control |
US6865210B2 (en) * | 2001-05-03 | 2005-03-08 | Cymer, Inc. | Timing control for two-chamber gas discharge laser system |
US6625191B2 (en) * | 1999-12-10 | 2003-09-23 | Cymer, Inc. | Very narrow band, two chamber, high rep rate gas discharge laser system |
US6377651B1 (en) * | 1999-10-11 | 2002-04-23 | University Of Central Florida | Laser plasma source for extreme ultraviolet lithography using a water droplet target |
US6831963B2 (en) * | 2000-10-20 | 2004-12-14 | University Of Central Florida | EUV, XUV, and X-Ray wavelength sources created from laser plasma produced from liquid metal solutions |
TWI246872B (en) * | 1999-12-17 | 2006-01-01 | Asml Netherlands Bv | Radiation source for use in lithographic projection apparatus |
JP2002006096A (ja) * | 2000-06-23 | 2002-01-09 | Nikon Corp | 電磁波発生装置、これを用いた半導体製造装置並びに半導体デバイスの製造方法 |
US6839372B2 (en) * | 2000-11-17 | 2005-01-04 | Cymer, Inc. | Gas discharge ultraviolet laser with enclosed beam path with added oxidizer |
US6576912B2 (en) * | 2001-01-03 | 2003-06-10 | Hugo M. Visser | Lithographic projection apparatus equipped with extreme ultraviolet window serving simultaneously as vacuum window |
US6804327B2 (en) * | 2001-04-03 | 2004-10-12 | Lambda Physik Ag | Method and apparatus for generating high output power gas discharge based source of extreme ultraviolet radiation and/or soft x-rays |
US6396900B1 (en) * | 2001-05-01 | 2002-05-28 | The Regents Of The University Of California | Multilayer films with sharp, stable interfaces for use in EUV and soft X-ray application |
US6963595B2 (en) * | 2001-08-29 | 2005-11-08 | Cymer, Inc. | Automatic gas control system for a gas discharge laser |
DE10151080C1 (de) * | 2001-10-10 | 2002-12-05 | Xtreme Tech Gmbh | Einrichtung und Verfahren zum Erzeugen von extrem ultravioletter (EUV-)Strahlung auf Basis einer Gasentladung |
US7184204B2 (en) * | 2003-07-01 | 2007-02-27 | Lambda Physik Ag | Master-oscillator power-amplifier (MOPA) excimer or molecular fluorine laser system with long optics lifetime |
US7087914B2 (en) * | 2004-03-17 | 2006-08-08 | Cymer, Inc | High repetition rate laser produced plasma EUV light source |
WO2005089131A2 (en) * | 2004-03-17 | 2005-09-29 | Cymer, Inc. | Lpp euv light source |
-
2005
- 2005-12-29 US US11/324,104 patent/US20060146906A1/en not_active Abandoned
-
2006
- 2006-02-22 JP JP2007558082A patent/JP2008533703A/ja active Pending
- 2006-02-22 WO PCT/US2006/006597 patent/WO2006093826A2/en active Application Filing
- 2006-02-22 EP EP06736026A patent/EP1861903A4/en not_active Withdrawn
- 2006-02-22 KR KR1020077022258A patent/KR20070114199A/ko not_active Application Discontinuation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0575196A (ja) * | 1991-02-28 | 1993-03-26 | Amoco Corp | 単一周波数の周波数2倍化レーザ及び単一周波数の緑色又は青色光を発生する方法 |
JPH06120593A (ja) * | 1992-09-30 | 1994-04-28 | Nippon Steel Corp | 固体レーザ装置 |
JP2002151779A (ja) * | 2000-08-28 | 2002-05-24 | Komatsu Ltd | レーザ装置及びシード光の最適化方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007129066A (ja) * | 2005-11-04 | 2007-05-24 | Univ Of Miyazaki | 極端紫外光発生方法および極端紫外光発生装置 |
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WO2006093826A3 (en) | 2007-12-13 |
EP1861903A4 (en) | 2010-07-07 |
EP1861903A2 (en) | 2007-12-05 |
US20060146906A1 (en) | 2006-07-06 |
WO2006093826A2 (en) | 2006-09-08 |
KR20070114199A (ko) | 2007-11-29 |
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