JP2008533299A - 金属材料を含むコンポーネント、物理蒸着ターゲット、薄膜、及び金属コンポーネントの形成法 - Google Patents

金属材料を含むコンポーネント、物理蒸着ターゲット、薄膜、及び金属コンポーネントの形成法 Download PDF

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JP2008533299A
JP2008533299A JP2008500698A JP2008500698A JP2008533299A JP 2008533299 A JP2008533299 A JP 2008533299A JP 2008500698 A JP2008500698 A JP 2008500698A JP 2008500698 A JP2008500698 A JP 2008500698A JP 2008533299 A JP2008533299 A JP 2008533299A
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Japan
Prior art keywords
target
metal
component
metallic
molybdenum
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JP2008500698A
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English (en)
Japanese (ja)
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JP2008533299A5 (enExample
Inventor
モラレス，ダイアナ・エル
ストロサーズ，スーザン・ディー
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Honeywell International Inc
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Honeywell International Inc
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Publication date
Application filed by Honeywell International Inc filed Critical Honeywell International Inc
Publication of JP2008533299A publication Critical patent/JP2008533299A/ja
Publication of JP2008533299A5 publication Critical patent/JP2008533299A5/ja
Withdrawn legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12—Both compacting and sintering
    • B22F3/14—Both compacting and sintering simultaneously
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12—Both compacting and sintering
    • B22F3/14—Both compacting and sintering simultaneously
    • B22F3/15—Hot isostatic pressing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
    • B22F2998/10—Processes characterised by the sequence of their steps
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2999/00—Aspects linked to processes or compositions used in powder metallurgy

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Powder Metallurgy (AREA)
JP2008500698A 2005-03-11 2005-11-29 金属材料を含むコンポーネント、物理蒸着ターゲット、薄膜、及び金属コンポーネントの形成法 Withdrawn JP2008533299A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US66129205P 2005-03-11 2005-03-11
PCT/US2005/043382 WO2006098781A2 (en) 2005-03-11 2005-11-29 Methods for making sputtering targets

Publications (2)

Publication Number Publication Date
JP2008533299A true JP2008533299A (ja) 2008-08-21
JP2008533299A5 JP2008533299A5 (enExample) 2009-01-15

Family

ID=36177362

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008500698A Withdrawn JP2008533299A (ja) 2005-03-11 2005-11-29 金属材料を含むコンポーネント、物理蒸着ターゲット、薄膜、及び金属コンポーネントの形成法

Country Status (7)

Country Link
US (1) US20060201589A1 (enExample)
EP (1) EP1866456A2 (enExample)
JP (1) JP2008533299A (enExample)
KR (1) KR20070108908A (enExample)
CN (1) CN101155945A (enExample)
TW (1) TW200641166A (enExample)
WO (1) WO2006098781A2 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5301530B2 (ja) * 2008-03-28 2013-09-25 Ｊｘ日鉱日石金属株式会社 磁性材ターゲット用白金粉末、同粉末の製造方法、白金焼結体からなる磁性材ターゲットの製造方法及び同焼結磁性材ターゲット
KR20170015559A (ko) 2012-11-02 2017-02-08 제이엑스금속주식회사 텅스텐 소결체 스퍼터링 타깃 및 그 타깃을 사용하여 성막한 텅스텐막
JP2021515106A (ja) * 2018-03-05 2021-06-17 グローバル アドバンスト メタルズ ユー．エス．エー．，インコーポレイティド 粉末冶金スパッタリングターゲット及びその製造方法

Families Citing this family (15)

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JP5389802B2 (ja) * 2007-08-06 2014-01-15 エイチ．シー． スターク インコーポレイテッド 組織の均一性が改善された高融点金属プレート
US8250895B2 (en) * 2007-08-06 2012-08-28 H.C. Starck Inc. Methods and apparatus for controlling texture of plates and sheets by tilt rolling
JP4879842B2 (ja) * 2007-08-20 2012-02-22 Ｊｘ日鉱日石金属株式会社 ジルコニウム坩堝
JP5135002B2 (ja) 2008-02-28 2013-01-30 ルネサスエレクトロニクス株式会社 半導体装置
KR101249153B1 (ko) * 2008-03-17 2013-03-29 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 소결체 타겟 및 소결체의 제조 방법
CN103814151B (zh) 2011-06-27 2016-01-20 梭莱有限公司 Pvd靶材及其铸造方法
CN102366856A (zh) * 2011-10-20 2012-03-07 宁波江丰电子材料有限公司 钴靶材组件的焊接方法
CN104513953B (zh) * 2013-09-30 2018-02-09 宁波江丰电子材料股份有限公司 钼硅靶材的制作方法
CN104694895B (zh) * 2013-12-05 2017-05-10 有研亿金新材料股份有限公司 一种W‑Ti合金靶材及其制造方法
JP6677875B2 (ja) * 2015-03-23 2020-04-08 三菱マテリアル株式会社 多結晶タングステン及びタングステン合金焼結体並びにその製造方法
JP7174476B2 (ja) 2017-03-31 2022-11-17 Ｊｘ金属株式会社 タングステンターゲット
CN111020330B (zh) * 2019-12-13 2021-06-01 安泰天龙钨钼科技有限公司 一种钼铼合金型材的制备方法
CN111270210B (zh) * 2020-03-17 2021-11-12 贵研铂业股份有限公司 一种晶粒高定向取向的钌溅射靶材及其制备方法
CN114574821B (zh) * 2022-01-31 2023-05-23 安泰科技股份有限公司 一种大尺寸钼靶材的制备方法
CN115233175A (zh) * 2022-08-08 2022-10-25 新加坡先进薄膜材料私人有限公司 一种钌旋转溅射靶材的制备方法

Family Cites Families (19)

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Publication number Priority date Publication date Assignee Title
JPH028304A (ja) * 1988-06-27 1990-01-11 Central Glass Co Ltd タングステン粉末の製造法
US5590389A (en) * 1994-12-23 1996-12-31 Johnson Matthey Electronics, Inc. Sputtering target with ultra-fine, oriented grains and method of making same
US6569270B2 (en) * 1997-07-11 2003-05-27 Honeywell International Inc. Process for producing a metal article
US20030052000A1 (en) * 1997-07-11 2003-03-20 Vladimir Segal Fine grain size material, sputtering target, methods of forming, and micro-arc reduction method
JP4058777B2 (ja) * 1997-07-31 2008-03-12 日鉱金属株式会社 薄膜形成用高純度ルテニウム焼結体スパッタリングターゲット及び同ターゲットをスパッタリングすることによって形成される薄膜
JP3244167B2 (ja) * 1998-01-19 2002-01-07 日立金属株式会社 タングステンまたはモリブデンターゲット
JP3743740B2 (ja) * 1998-07-27 2006-02-08 日立金属株式会社 Ｍｏ系焼結ターゲット材
US6328927B1 (en) * 1998-12-24 2001-12-11 Praxair Technology, Inc. Method of making high-density, high-purity tungsten sputter targets
US6039674A (en) * 1999-03-26 2000-03-21 Daimlerchrysler Corporation Quick learn procedure for fill volumes of an electronically controlled automatic transmission
JP2001020065A (ja) * 1999-07-07 2001-01-23 Hitachi Metals Ltd スパッタリング用ターゲット及びその製造方法ならびに高融点金属粉末材料
US6165413A (en) * 1999-07-08 2000-12-26 Praxair S.T. Technology, Inc. Method of making high density sputtering targets
US6521173B2 (en) * 1999-08-19 2003-02-18 H.C. Starck, Inc. Low oxygen refractory metal powder for powder metallurgy
US6462339B1 (en) * 2000-09-20 2002-10-08 Cabot Corporation Method for quantifying the texture homogeneity of a polycrystalline material
TW541350B (en) * 2000-12-29 2003-07-11 Solar Applied Material Technol Method for producing metal target for sputtering
JP3748221B2 (ja) * 2001-10-23 2006-02-22 日立金属株式会社 Ｍｏ系スパッタリング用ターゲットおよびその製造方法
JP2003226964A (ja) * 2002-02-05 2003-08-15 Nippon Steel Corp スパッタリング用タングステンターゲットの製造方法
JP2003342720A (ja) * 2002-05-20 2003-12-03 Nippon Steel Corp スパッタリング用モリブデンターゲットの製造方法及びモリブデンターゲット
US7832619B2 (en) * 2004-02-27 2010-11-16 Howmet Corporation Method of making sputtering target
US20060042728A1 (en) * 2004-08-31 2006-03-02 Brad Lemon Molybdenum sputtering targets

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5301530B2 (ja) * 2008-03-28 2013-09-25 Ｊｘ日鉱日石金属株式会社 磁性材ターゲット用白金粉末、同粉末の製造方法、白金焼結体からなる磁性材ターゲットの製造方法及び同焼結磁性材ターゲット
KR20170015559A (ko) 2012-11-02 2017-02-08 제이엑스금속주식회사 텅스텐 소결체 스퍼터링 타깃 및 그 타깃을 사용하여 성막한 텅스텐막
TWI588282B (zh) * 2012-11-02 2017-06-21 Ｊｘ日鑛日石金屬股份有限公司 A tungsten sintered sputtering target and a tungsten film formed using the target
JP2021515106A (ja) * 2018-03-05 2021-06-17 グローバル アドバンスト メタルズ ユー．エス．エー．，インコーポレイティド 粉末冶金スパッタリングターゲット及びその製造方法
JP7383300B2 (ja) 2018-03-05 2023-11-20 グローバル アドバンスト メタルズ ユー．エス．エー．，インコーポレイティド 粉末冶金スパッタリングターゲット及びその製造方法
US12221678B2 (en) 2018-03-05 2025-02-11 Global Advanced Metals Usa, Inc. Powder metallurgy sputtering targets and methods of producing same

Also Published As

Publication number Publication date
EP1866456A2 (en) 2007-12-19
CN101155945A (zh) 2008-04-02
TW200641166A (en) 2006-12-01
US20060201589A1 (en) 2006-09-14
WO2006098781A2 (en) 2006-09-21
KR20070108908A (ko) 2007-11-13
WO2006098781A3 (en) 2006-11-09

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