JP2008529066A5 - - Google Patents

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Publication number
JP2008529066A5
JP2008529066A5 JP2007552287A JP2007552287A JP2008529066A5 JP 2008529066 A5 JP2008529066 A5 JP 2008529066A5 JP 2007552287 A JP2007552287 A JP 2007552287A JP 2007552287 A JP2007552287 A JP 2007552287A JP 2008529066 A5 JP2008529066 A5 JP 2008529066A5
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JP
Japan
Prior art keywords
design
mask
predetermined
manufacturable
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007552287A
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English (en)
Japanese (ja)
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JP4755655B2 (ja
JP2008529066A (ja
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Publication date
Priority claimed from US10/905,822 external-priority patent/US7617473B2/en
Application filed filed Critical
Publication of JP2008529066A publication Critical patent/JP2008529066A/ja
Publication of JP2008529066A5 publication Critical patent/JP2008529066A5/ja
Application granted granted Critical
Publication of JP4755655B2 publication Critical patent/JP4755655B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2007552287A 2005-01-21 2006-01-20 差分交互位相シフト・マスクの最適化 Expired - Fee Related JP4755655B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/905,822 US7617473B2 (en) 2005-01-21 2005-01-21 Differential alternating phase shift mask optimization
US10/905,822 2005-01-21
PCT/US2006/002046 WO2006078908A2 (en) 2005-01-21 2006-01-20 Differential alternating phase shift mask optimization

Publications (3)

Publication Number Publication Date
JP2008529066A JP2008529066A (ja) 2008-07-31
JP2008529066A5 true JP2008529066A5 (enExample) 2008-11-27
JP4755655B2 JP4755655B2 (ja) 2011-08-24

Family

ID=36692923

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007552287A Expired - Fee Related JP4755655B2 (ja) 2005-01-21 2006-01-20 差分交互位相シフト・マスクの最適化

Country Status (6)

Country Link
US (2) US7617473B2 (enExample)
EP (1) EP1849112A2 (enExample)
JP (1) JP4755655B2 (enExample)
CN (1) CN101213547B (enExample)
TW (1) TW200710694A (enExample)
WO (1) WO2006078908A2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7617473B2 (en) * 2005-01-21 2009-11-10 International Business Machines Corporation Differential alternating phase shift mask optimization
US20080028359A1 (en) * 2006-07-31 2008-01-31 Stefan Blawid Termination structure, a mask for manufacturing a termination structure, a lithographic process and a semiconductor device with a termination structure
US8875063B2 (en) 2010-10-11 2014-10-28 International Business Machines Corporation Mask layout formation
CN102289146B (zh) * 2011-09-14 2012-12-05 北京理工大学 基于广义小波罚函数优化二相位相移掩膜的方法
US9223911B2 (en) 2014-01-30 2015-12-29 Globalfoundries Inc. Optical model employing phase transmission values for sub-resolution assist features
EP2952964A1 (en) * 2014-06-03 2015-12-09 Aselta Nanographics Method for determining the parameters of an ic manufacturing process by a differential procedure
KR102305092B1 (ko) 2014-07-16 2021-09-24 삼성전자주식회사 포토리소그래피용 마스크와 그 제조 방법

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2603128B1 (fr) * 1986-08-21 1988-11-10 Commissariat Energie Atomique Cellule de memoire eprom et son procede de fabrication
JP2003526110A (ja) * 1997-09-17 2003-09-02 ニューメリカル テクノロジーズ インコーポレイテッド 設計ルールの照合システム及び方法
US6335128B1 (en) 1999-09-28 2002-01-01 Nicolas Bailey Cobb Method and apparatus for determining phase shifts and trim masks for an integrated circuit
US6569574B2 (en) 1999-10-18 2003-05-27 Micron Technology, Inc. Methods of patterning radiation, methods of forming radiation-patterning tools, and radiation-patterning tools
US6503666B1 (en) 2000-07-05 2003-01-07 Numerical Technologies, Inc. Phase shift masking for complex patterns
JP4064617B2 (ja) * 2000-10-26 2008-03-19 株式会社東芝 マスクパターン補正方法、マスクパターン補正装置、マスクパターン補正プログラムを格納した記録媒体、及び半導体装置の製造方法
US6553560B2 (en) 2001-04-03 2003-04-22 Numerical Technologies, Inc. Alleviating line end shortening in transistor endcaps by extending phase shifters
US6573010B2 (en) 2001-04-03 2003-06-03 Numerical Technologies, Inc. Method and apparatus for reducing incidental exposure by using a phase shifter with a variable regulator
US6703167B2 (en) * 2001-04-18 2004-03-09 Lacour Patrick Joseph Prioritizing the application of resolution enhancement techniques
US6569583B2 (en) * 2001-05-04 2003-05-27 Numerical Technologies, Inc. Method and apparatus for using phase shifter cutbacks to resolve phase shifter conflicts
US6821689B2 (en) * 2002-09-16 2004-11-23 Numerical Technologies Using second exposure to assist a PSM exposure in printing a tight space adjacent to large feature
US7172838B2 (en) * 2002-09-27 2007-02-06 Wilhelm Maurer Chromeless phase mask layout generation
US6832364B2 (en) * 2002-10-03 2004-12-14 International Business Machines Corporation Integrated lithographic layout optimization
US7229722B2 (en) * 2004-01-28 2007-06-12 International Business Machines Corporation Alternating phase shift mask design for high performance circuitry
US7175942B2 (en) * 2004-02-05 2007-02-13 International Business Machines Corporation Method of conflict avoidance in fabrication of gate-shrink alternating phase shifting masks
WO2005111874A2 (en) * 2004-05-07 2005-11-24 Mentor Graphics Corporation Integrated circuit layout design methodology with process variation bands
KR100716990B1 (ko) 2005-01-05 2007-05-14 삼성전자주식회사 수차 보정용 액정소자 및 이를 구비한 광픽업 및 광 기록및/또는 재생기기
US7617473B2 (en) * 2005-01-21 2009-11-10 International Business Machines Corporation Differential alternating phase shift mask optimization

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