JP2008529066A5 - - Google Patents

Download PDF

Info

Publication number
JP2008529066A5
JP2008529066A5 JP2007552287A JP2007552287A JP2008529066A5 JP 2008529066 A5 JP2008529066 A5 JP 2008529066A5 JP 2007552287 A JP2007552287 A JP 2007552287A JP 2007552287 A JP2007552287 A JP 2007552287A JP 2008529066 A5 JP2008529066 A5 JP 2008529066A5
Authority
JP
Japan
Prior art keywords
design
mask
predetermined
manufacturable
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007552287A
Other languages
English (en)
Japanese (ja)
Other versions
JP4755655B2 (ja
JP2008529066A (ja
Filing date
Publication date
Priority claimed from US10/905,822 external-priority patent/US7617473B2/en
Application filed filed Critical
Publication of JP2008529066A publication Critical patent/JP2008529066A/ja
Publication of JP2008529066A5 publication Critical patent/JP2008529066A5/ja
Application granted granted Critical
Publication of JP4755655B2 publication Critical patent/JP4755655B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2007552287A 2005-01-21 2006-01-20 差分交互位相シフト・マスクの最適化 Expired - Fee Related JP4755655B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/905,822 2005-01-21
US10/905,822 US7617473B2 (en) 2005-01-21 2005-01-21 Differential alternating phase shift mask optimization
PCT/US2006/002046 WO2006078908A2 (en) 2005-01-21 2006-01-20 Differential alternating phase shift mask optimization

Publications (3)

Publication Number Publication Date
JP2008529066A JP2008529066A (ja) 2008-07-31
JP2008529066A5 true JP2008529066A5 (enExample) 2008-11-27
JP4755655B2 JP4755655B2 (ja) 2011-08-24

Family

ID=36692923

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007552287A Expired - Fee Related JP4755655B2 (ja) 2005-01-21 2006-01-20 差分交互位相シフト・マスクの最適化

Country Status (6)

Country Link
US (2) US7617473B2 (enExample)
EP (1) EP1849112A2 (enExample)
JP (1) JP4755655B2 (enExample)
CN (1) CN101213547B (enExample)
TW (1) TW200710694A (enExample)
WO (1) WO2006078908A2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7617473B2 (en) * 2005-01-21 2009-11-10 International Business Machines Corporation Differential alternating phase shift mask optimization
US20080028359A1 (en) * 2006-07-31 2008-01-31 Stefan Blawid Termination structure, a mask for manufacturing a termination structure, a lithographic process and a semiconductor device with a termination structure
US8875063B2 (en) 2010-10-11 2014-10-28 International Business Machines Corporation Mask layout formation
CN102289146B (zh) * 2011-09-14 2012-12-05 北京理工大学 基于广义小波罚函数优化二相位相移掩膜的方法
US9223911B2 (en) 2014-01-30 2015-12-29 Globalfoundries Inc. Optical model employing phase transmission values for sub-resolution assist features
EP2952964A1 (en) * 2014-06-03 2015-12-09 Aselta Nanographics Method for determining the parameters of an ic manufacturing process by a differential procedure
KR102305092B1 (ko) 2014-07-16 2021-09-24 삼성전자주식회사 포토리소그래피용 마스크와 그 제조 방법

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2603128B1 (fr) * 1986-08-21 1988-11-10 Commissariat Energie Atomique Cellule de memoire eprom et son procede de fabrication
KR20010024113A (ko) * 1997-09-17 2001-03-26 뉴메리컬 테크날러쥐스 인코포레이티드 마스크 묘사 시스템에서 데이터 계층 유지보수를 위한방법 및 장치
US6335128B1 (en) 1999-09-28 2002-01-01 Nicolas Bailey Cobb Method and apparatus for determining phase shifts and trim masks for an integrated circuit
US6569574B2 (en) 1999-10-18 2003-05-27 Micron Technology, Inc. Methods of patterning radiation, methods of forming radiation-patterning tools, and radiation-patterning tools
US6503666B1 (en) 2000-07-05 2003-01-07 Numerical Technologies, Inc. Phase shift masking for complex patterns
JP4064617B2 (ja) * 2000-10-26 2008-03-19 株式会社東芝 マスクパターン補正方法、マスクパターン補正装置、マスクパターン補正プログラムを格納した記録媒体、及び半導体装置の製造方法
US6573010B2 (en) 2001-04-03 2003-06-03 Numerical Technologies, Inc. Method and apparatus for reducing incidental exposure by using a phase shifter with a variable regulator
US6553560B2 (en) 2001-04-03 2003-04-22 Numerical Technologies, Inc. Alleviating line end shortening in transistor endcaps by extending phase shifters
US6703167B2 (en) * 2001-04-18 2004-03-09 Lacour Patrick Joseph Prioritizing the application of resolution enhancement techniques
US6569583B2 (en) * 2001-05-04 2003-05-27 Numerical Technologies, Inc. Method and apparatus for using phase shifter cutbacks to resolve phase shifter conflicts
US6821689B2 (en) * 2002-09-16 2004-11-23 Numerical Technologies Using second exposure to assist a PSM exposure in printing a tight space adjacent to large feature
US7172838B2 (en) * 2002-09-27 2007-02-06 Wilhelm Maurer Chromeless phase mask layout generation
US6832364B2 (en) * 2002-10-03 2004-12-14 International Business Machines Corporation Integrated lithographic layout optimization
US7229722B2 (en) 2004-01-28 2007-06-12 International Business Machines Corporation Alternating phase shift mask design for high performance circuitry
US7175942B2 (en) * 2004-02-05 2007-02-13 International Business Machines Corporation Method of conflict avoidance in fabrication of gate-shrink alternating phase shifting masks
EP1747520B1 (en) * 2004-05-07 2018-10-24 Mentor Graphics Corporation Integrated circuit layout design methodology with process variation bands
KR100716990B1 (ko) 2005-01-05 2007-05-14 삼성전자주식회사 수차 보정용 액정소자 및 이를 구비한 광픽업 및 광 기록및/또는 재생기기
US7617473B2 (en) * 2005-01-21 2009-11-10 International Business Machines Corporation Differential alternating phase shift mask optimization

Similar Documents

Publication Publication Date Title
Drapeau et al. Double patterning design split implementation and validation for the 32nm node
Pang et al. Inverse lithography technology (ILT): What is the impact to the photomask industry?
CN103311102B (zh) 制作与双重图案化技术兼容的转折布局绕线的方法
CN103376643B (zh) 校正布局图形的方法
CN109585371B (zh) 集成电路布局方法、结构和系统
TWI806863B (zh) 為了目標特徵而用於產生包含子解析度輔助特徵的一光罩的方法
CN106356333A (zh) 用于芯轴和间隔件图案化的方法和结构
CN105988283B (zh) 用于制造集成电路的光掩模和方法
US20120040276A1 (en) Method of forming and using photolithography mask having a scattering bar structure
JP2008529066A5 (enExample)
JP5979908B2 (ja) フォトマスク及び半導体装置の製造方法
JP2011237798A5 (enExample)
US8181126B2 (en) Differential alternating phase shift mask optimization
US9104833B2 (en) Mask set for double exposure process and method of using the mask set
JP2001203139A5 (enExample)
TWI456339B (zh) 光罩對位方法、光罩、以及相關之半導體裝置
Chen et al. Analysis of process characteristics of self-aligned multiple patterning
CN106154756B (zh) 照明系统以及使用其形成鳍状结构的方法
TW200928577A (en) Phase-shift mask and method for forming a pattern
Kim et al. Size tolerance of sub-resolution assist features for sub-50-nm node device
KR20110010441A (ko) 이중 노광 방법을 이용한 광 근접효과 제거방법
TW201344343A (zh) 用於雙重曝光製程的光罩組暨使用該光罩組的方法
TW446857B (en) Photomask having alignment function
JP2015025917A (ja) 二重露光のマスク構造及び露光現像の方法
Lai et al. Optical Microlithography XXVIII