TW200710694A - Differential alternating phase shift mask optimization - Google Patents

Differential alternating phase shift mask optimization

Info

Publication number
TW200710694A
TW200710694A TW095100531A TW95100531A TW200710694A TW 200710694 A TW200710694 A TW 200710694A TW 095100531 A TW095100531 A TW 095100531A TW 95100531 A TW95100531 A TW 95100531A TW 200710694 A TW200710694 A TW 200710694A
Authority
TW
Taiwan
Prior art keywords
design
mask
features
critical width
rules
Prior art date
Application number
TW095100531A
Other languages
English (en)
Chinese (zh)
Inventor
Lars W Liebmann
Zachary Baum
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of TW200710694A publication Critical patent/TW200710694A/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/29—Rim PSM or outrigger PSM; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
TW095100531A 2005-01-21 2006-01-05 Differential alternating phase shift mask optimization TW200710694A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/905,822 US7617473B2 (en) 2005-01-21 2005-01-21 Differential alternating phase shift mask optimization

Publications (1)

Publication Number Publication Date
TW200710694A true TW200710694A (en) 2007-03-16

Family

ID=36692923

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095100531A TW200710694A (en) 2005-01-21 2006-01-05 Differential alternating phase shift mask optimization

Country Status (6)

Country Link
US (2) US7617473B2 (enExample)
EP (1) EP1849112A2 (enExample)
JP (1) JP4755655B2 (enExample)
CN (1) CN101213547B (enExample)
TW (1) TW200710694A (enExample)
WO (1) WO2006078908A2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7617473B2 (en) * 2005-01-21 2009-11-10 International Business Machines Corporation Differential alternating phase shift mask optimization
US20080028359A1 (en) * 2006-07-31 2008-01-31 Stefan Blawid Termination structure, a mask for manufacturing a termination structure, a lithographic process and a semiconductor device with a termination structure
US8875063B2 (en) 2010-10-11 2014-10-28 International Business Machines Corporation Mask layout formation
CN102289146B (zh) * 2011-09-14 2012-12-05 北京理工大学 基于广义小波罚函数优化二相位相移掩膜的方法
US9223911B2 (en) 2014-01-30 2015-12-29 Globalfoundries Inc. Optical model employing phase transmission values for sub-resolution assist features
EP2952964A1 (en) * 2014-06-03 2015-12-09 Aselta Nanographics Method for determining the parameters of an ic manufacturing process by a differential procedure
KR102305092B1 (ko) 2014-07-16 2021-09-24 삼성전자주식회사 포토리소그래피용 마스크와 그 제조 방법

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2603128B1 (fr) * 1986-08-21 1988-11-10 Commissariat Energie Atomique Cellule de memoire eprom et son procede de fabrication
KR20010024113A (ko) * 1997-09-17 2001-03-26 뉴메리컬 테크날러쥐스 인코포레이티드 마스크 묘사 시스템에서 데이터 계층 유지보수를 위한방법 및 장치
US6335128B1 (en) 1999-09-28 2002-01-01 Nicolas Bailey Cobb Method and apparatus for determining phase shifts and trim masks for an integrated circuit
US6569574B2 (en) 1999-10-18 2003-05-27 Micron Technology, Inc. Methods of patterning radiation, methods of forming radiation-patterning tools, and radiation-patterning tools
US6503666B1 (en) 2000-07-05 2003-01-07 Numerical Technologies, Inc. Phase shift masking for complex patterns
JP4064617B2 (ja) * 2000-10-26 2008-03-19 株式会社東芝 マスクパターン補正方法、マスクパターン補正装置、マスクパターン補正プログラムを格納した記録媒体、及び半導体装置の製造方法
US6573010B2 (en) 2001-04-03 2003-06-03 Numerical Technologies, Inc. Method and apparatus for reducing incidental exposure by using a phase shifter with a variable regulator
US6553560B2 (en) 2001-04-03 2003-04-22 Numerical Technologies, Inc. Alleviating line end shortening in transistor endcaps by extending phase shifters
US6703167B2 (en) * 2001-04-18 2004-03-09 Lacour Patrick Joseph Prioritizing the application of resolution enhancement techniques
US6569583B2 (en) * 2001-05-04 2003-05-27 Numerical Technologies, Inc. Method and apparatus for using phase shifter cutbacks to resolve phase shifter conflicts
US6821689B2 (en) * 2002-09-16 2004-11-23 Numerical Technologies Using second exposure to assist a PSM exposure in printing a tight space adjacent to large feature
US7172838B2 (en) * 2002-09-27 2007-02-06 Wilhelm Maurer Chromeless phase mask layout generation
US6832364B2 (en) * 2002-10-03 2004-12-14 International Business Machines Corporation Integrated lithographic layout optimization
US7229722B2 (en) 2004-01-28 2007-06-12 International Business Machines Corporation Alternating phase shift mask design for high performance circuitry
US7175942B2 (en) * 2004-02-05 2007-02-13 International Business Machines Corporation Method of conflict avoidance in fabrication of gate-shrink alternating phase shifting masks
EP1747520B1 (en) * 2004-05-07 2018-10-24 Mentor Graphics Corporation Integrated circuit layout design methodology with process variation bands
KR100716990B1 (ko) 2005-01-05 2007-05-14 삼성전자주식회사 수차 보정용 액정소자 및 이를 구비한 광픽업 및 광 기록및/또는 재생기기
US7617473B2 (en) * 2005-01-21 2009-11-10 International Business Machines Corporation Differential alternating phase shift mask optimization

Also Published As

Publication number Publication date
JP4755655B2 (ja) 2011-08-24
US7617473B2 (en) 2009-11-10
WO2006078908A3 (en) 2007-11-22
CN101213547A (zh) 2008-07-02
CN101213547B (zh) 2012-05-09
US20100017780A1 (en) 2010-01-21
JP2008529066A (ja) 2008-07-31
WO2006078908A2 (en) 2006-07-27
US20060166105A1 (en) 2006-07-27
EP1849112A2 (en) 2007-10-31
US8181126B2 (en) 2012-05-15

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