JP4755655B2 - 差分交互位相シフト・マスクの最適化 - Google Patents

差分交互位相シフト・マスクの最適化 Download PDF

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JP4755655B2
JP4755655B2 JP2007552287A JP2007552287A JP4755655B2 JP 4755655 B2 JP4755655 B2 JP 4755655B2 JP 2007552287 A JP2007552287 A JP 2007552287A JP 2007552287 A JP2007552287 A JP 2007552287A JP 4755655 B2 JP4755655 B2 JP 4755655B2
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design
mask
predetermined
manufacturable
integrated circuit
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Japanese (ja)
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JP2008529066A5 (enExample
JP2008529066A (ja
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リーバーマン、ラーズ、ダブリュー
ボーム、ザカリー
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International Business Machines Corp
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International Business Machines Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/29—Rim PSM or outrigger PSM; Preparation thereof

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
JP2007552287A 2005-01-21 2006-01-20 差分交互位相シフト・マスクの最適化 Expired - Fee Related JP4755655B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/905,822 2005-01-21
US10/905,822 US7617473B2 (en) 2005-01-21 2005-01-21 Differential alternating phase shift mask optimization
PCT/US2006/002046 WO2006078908A2 (en) 2005-01-21 2006-01-20 Differential alternating phase shift mask optimization

Publications (3)

Publication Number Publication Date
JP2008529066A JP2008529066A (ja) 2008-07-31
JP2008529066A5 JP2008529066A5 (enExample) 2008-11-27
JP4755655B2 true JP4755655B2 (ja) 2011-08-24

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ID=36692923

Family Applications (1)

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JP2007552287A Expired - Fee Related JP4755655B2 (ja) 2005-01-21 2006-01-20 差分交互位相シフト・マスクの最適化

Country Status (6)

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US (2) US7617473B2 (enExample)
EP (1) EP1849112A2 (enExample)
JP (1) JP4755655B2 (enExample)
CN (1) CN101213547B (enExample)
TW (1) TW200710694A (enExample)
WO (1) WO2006078908A2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7617473B2 (en) * 2005-01-21 2009-11-10 International Business Machines Corporation Differential alternating phase shift mask optimization
US20080028359A1 (en) * 2006-07-31 2008-01-31 Stefan Blawid Termination structure, a mask for manufacturing a termination structure, a lithographic process and a semiconductor device with a termination structure
US8875063B2 (en) 2010-10-11 2014-10-28 International Business Machines Corporation Mask layout formation
CN102289146B (zh) * 2011-09-14 2012-12-05 北京理工大学 基于广义小波罚函数优化二相位相移掩膜的方法
US9223911B2 (en) 2014-01-30 2015-12-29 Globalfoundries Inc. Optical model employing phase transmission values for sub-resolution assist features
EP2952964A1 (en) * 2014-06-03 2015-12-09 Aselta Nanographics Method for determining the parameters of an ic manufacturing process by a differential procedure
KR102305092B1 (ko) 2014-07-16 2021-09-24 삼성전자주식회사 포토리소그래피용 마스크와 그 제조 방법

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63102266A (ja) * 1986-08-21 1988-05-07 コミッサレ・ア・レナジイ・アトミック 半導体基板上の集積回路、集積メモリセルおよびその製造方法
JP2002131882A (ja) * 2000-10-26 2002-05-09 Toshiba Corp マスクパターン補正方法、マスクパターン補正装置、マスクパターン補正プログラムを格納した記録媒体、及び半導体装置の製造方法
US6569583B2 (en) * 2001-05-04 2003-05-27 Numerical Technologies, Inc. Method and apparatus for using phase shifter cutbacks to resolve phase shifter conflicts
JP2003526110A (ja) * 1997-09-17 2003-09-02 ニューメリカル テクノロジーズ インコーポレイテッド 設計ルールの照合システム及び方法
JP2004520622A (ja) * 2001-04-18 2004-07-08 メンター・グラフィクス・コーポレーション 分解能向上技術の適用に優先順位を付ける方法及び装置
US6832364B2 (en) * 2002-10-03 2004-12-14 International Business Machines Corporation Integrated lithographic layout optimization
JP2007536581A (ja) * 2004-05-07 2007-12-13 メンター・グラフィクス・コーポレーション プロセス変動バンドを用いた集積回路レイアウト設計法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6335128B1 (en) 1999-09-28 2002-01-01 Nicolas Bailey Cobb Method and apparatus for determining phase shifts and trim masks for an integrated circuit
US6569574B2 (en) 1999-10-18 2003-05-27 Micron Technology, Inc. Methods of patterning radiation, methods of forming radiation-patterning tools, and radiation-patterning tools
US6503666B1 (en) 2000-07-05 2003-01-07 Numerical Technologies, Inc. Phase shift masking for complex patterns
US6573010B2 (en) 2001-04-03 2003-06-03 Numerical Technologies, Inc. Method and apparatus for reducing incidental exposure by using a phase shifter with a variable regulator
US6553560B2 (en) 2001-04-03 2003-04-22 Numerical Technologies, Inc. Alleviating line end shortening in transistor endcaps by extending phase shifters
US6821689B2 (en) * 2002-09-16 2004-11-23 Numerical Technologies Using second exposure to assist a PSM exposure in printing a tight space adjacent to large feature
US7172838B2 (en) * 2002-09-27 2007-02-06 Wilhelm Maurer Chromeless phase mask layout generation
US7229722B2 (en) 2004-01-28 2007-06-12 International Business Machines Corporation Alternating phase shift mask design for high performance circuitry
US7175942B2 (en) * 2004-02-05 2007-02-13 International Business Machines Corporation Method of conflict avoidance in fabrication of gate-shrink alternating phase shifting masks
KR100716990B1 (ko) 2005-01-05 2007-05-14 삼성전자주식회사 수차 보정용 액정소자 및 이를 구비한 광픽업 및 광 기록및/또는 재생기기
US7617473B2 (en) * 2005-01-21 2009-11-10 International Business Machines Corporation Differential alternating phase shift mask optimization

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63102266A (ja) * 1986-08-21 1988-05-07 コミッサレ・ア・レナジイ・アトミック 半導体基板上の集積回路、集積メモリセルおよびその製造方法
JP2003526110A (ja) * 1997-09-17 2003-09-02 ニューメリカル テクノロジーズ インコーポレイテッド 設計ルールの照合システム及び方法
JP2002131882A (ja) * 2000-10-26 2002-05-09 Toshiba Corp マスクパターン補正方法、マスクパターン補正装置、マスクパターン補正プログラムを格納した記録媒体、及び半導体装置の製造方法
JP2004520622A (ja) * 2001-04-18 2004-07-08 メンター・グラフィクス・コーポレーション 分解能向上技術の適用に優先順位を付ける方法及び装置
US6569583B2 (en) * 2001-05-04 2003-05-27 Numerical Technologies, Inc. Method and apparatus for using phase shifter cutbacks to resolve phase shifter conflicts
US6832364B2 (en) * 2002-10-03 2004-12-14 International Business Machines Corporation Integrated lithographic layout optimization
JP2007536581A (ja) * 2004-05-07 2007-12-13 メンター・グラフィクス・コーポレーション プロセス変動バンドを用いた集積回路レイアウト設計法

Also Published As

Publication number Publication date
US7617473B2 (en) 2009-11-10
WO2006078908A3 (en) 2007-11-22
CN101213547A (zh) 2008-07-02
CN101213547B (zh) 2012-05-09
US20100017780A1 (en) 2010-01-21
JP2008529066A (ja) 2008-07-31
WO2006078908A2 (en) 2006-07-27
US20060166105A1 (en) 2006-07-27
EP1849112A2 (en) 2007-10-31
TW200710694A (en) 2007-03-16
US8181126B2 (en) 2012-05-15

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