JP2008515163A - 表面波プラズマ処理システム及び使用方法 - Google Patents
表面波プラズマ処理システム及び使用方法 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/3222—Antennas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32229—Waveguides
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Abstract
【解決手段】 SWPソースは、プラズマに隣接する電磁気(EM)波ラウンチャのプラズマ表面上の表面波を生成することによって所望のEM波モードのEMエネルギをプラズマに結合させるように構成されたEM波ラウンチャを含む。パワー結合システムは、EM波ラウンチャに結合され、プラズマを形成するためのEM波ラウンチャにEMエネルギを提供するように構成される。EM波ラウンチャのプラズマ表面に結合されたカバープレートは、EM波ラウンチャをプラズマから保護する。
【選択図】
Description
しかしながら、カバープレートの厚さは、単なる波長の部分、従って、電界の減衰深さのより小さい部分であるので、解の上記セットは、不完全である。例えば、カバープレートと、プラズマとの間の界面での付加的な反射は、起こり、x>qに対する異なる崩壊定数が存在する。伝搬定数が、共振器プレート、カバープレート、およびプラズマに対して同じでなければならないという理由から、新しいβが存在する。さらに重要なことに、新しいβは、共振器プレート、カバープレート、およびプラズマにまたがっている新しい位相速度に至る。
Claims (26)
- プラズマに隣接する電磁気(EM)波ラウンチャのプラズマ表面上に表面波を生成することによって、所望のEM波モードのEMエネルギをプラズマに結合させるように構成された前記EM波ラウンチャと;
前記EM波ラウンチャに結合され、前記プラズマを形成するための前記EM波ラウンチャに前記EMエネルギを提供するように構成されたパワー結合システムと;
前記EM波ラウンチャの前記プラズマ表面に結合され、前記EM波ラウンチャを前記プラズマから保護するように構成されたカバープレートとを具備する表面波プラズマ(SWP)ソース。 - 前記EM波ラウンチャは、TM01モードとして前記所望のEM波モードを結合させるように構成されている請求項1のSWPソース。
- 前記カバープレートは、交換可能であるように構成されている請求項1のSWPソース。
- 前記カバープレートは、厚さ5mm以下の薄い材料のシートである請求項1のSWPソース。
- 前記カバープレートの厚さは、電磁的に重要でない請求項1のSWPソース。
- 前記カバープレートの厚さは、ほぼ1mmから5mmまでの範囲である請求項1のSWPソース。
- 前記カバープレートの厚さは、ほぼ1mmから3mmまでの範囲である請求項1のSWPソース。
- 前記カバープレートは、SiO2である請求項1のSWPソース。
- 前記パワー結合システムは、ラジオ周波数(RF)パワー結合システムを含んでいる請求項1のSWPソース。
- 前記パワー結合システムは、マイクロ波パワー結合システムを含んでいる請求項1のSWPソース。
- 前記マイクロ波パワー結合システムは、
2.45GHzでマイクロ波エネルギーを発生するように構成されたマイクロ波源と;
前記マイクロ波源の出口に結合された導波管と;
前記導波管に結合され、前記マイクロ波源へマイクロ波エネルギーの伝播を防止するように構成されたアイソレータと;
前記アイソレータに結合され、前記マイクロ波エネルギーを同軸フィードに結合させるように構成された同軸コンバータとを備え、
前記同軸フィードは、前記EM波ラウンチャに更に結合されている請求項10のSWPソース。 - 前記パワー結合システムは、EMエネルギを前記EM波ラウンチャに結合させるための同軸フィードを備え、
前記EMラウンチャは、前記同軸フィードの内部導体に結合された一方の端部と、前記同軸フィードの外部導体に結合された他方の端部とを有するスロットアンテナを備え、
前記スロットアンテナは、前記内部導体と、前記外部導体との間の前記スロットアンテナより上の第1の領域から、前記スロットアンテナの下の第2の領域に、前記EMエネルギを結合させるように構成された1つ以上のスロットを有している請求項10のSWPソース。 - 前記EM波ラウンチャは、
前記第1の領域に置かれ、自由空間の波長に対して前記EMエネルギの実効波長を減少するように構成された低速波長板と;
前記第2の領域に置かれ、前記EM波ラウンチャの前記プラズマ表面を含む前記共振器プレートの下面を有する共振器プレートとを更に備えている請求項12のプラズマ処理システム。 - 前記低速波長板と、前記共振器プレートとは、同じ材料組成である請求項13のSWPソース。
- 前記低速波長板と、前記共振器プレートとは、異なる材料組成である請求項13のSWPソース。
- 前記低速波長板と、前記共振器プレートとは、主として石英からなる請求項14のSWPソース。
- 前記共振器プレートは、プラズマの空間均一性を改良するように構成された少なくとも1つの同一中心の溝を備えている請求項16のSWPソース。
- 前記共振器プレートは、4の値より大きい誘電率を有する高誘電率(high−k)材料である請求項13のSWPソース。
- 前記共振器プレートは、内在性の結晶シリコン、アルミナ、およびサファイヤの1つ以上を備えている請求項18のSWPソース。
- 前記カバープレートは、前記共振器プレートの前記下面に結合されている請求項13のSWPソース。
- 前記共振器プレートおよび前記カバープレートのうちの少なくとも1つは、カバープレートと、共振器プレートとの界面で、改良された電気的接点を提供するために磨かれている請求項20のSWPソース。
- 改良された電気的接点を提供するために、前記共振器プレートと、前記カバープレートとの間に配置された薄膜を更に具備する請求項20のSWPソース。
- 前記薄膜は、熱SiO2膜、および堆積されたSiO2薄膜のうちの少なくとも1つである請求項22のSWPソース。
- EM波ラウンチャの前記プラズマ表面と、前記カバープレートとの間に配置され、前記EM波ラウンチャと、前記プラズマとの間の結合を改良するように構成されたモードスクランブラを更に具備する請求項1のSWPソース。
- プラズマに隣接する電磁気(EM)波ラウンチャのプラズマ表面上に表面波を生成することによって、所望のEM波モードのEMエネルギをプラズマに結合させるように構成された前記EM波ラウンチャと;
前記EM波ラウンチャに結合され、前記プラズマを形成するための前記EM波ラウンチャに前記EMエネルギを提供するように構成されたパワー結合システムと;
前記EM波ラウンチャの前記プラズマ表面に結合され、前記EM波ラウンチャを前記プラズマから保護するための手段とを具備する表面波プラズマ(SWP)ソース。 - 前記EM波ラウンチャの前記プラズマ表面の間に配置され、前記EM波ラウンチャと、前記プラズマとの間の結合を改良するための手段を更に具備する請求項25のSWPソース。
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US10/953,802 | 2004-09-30 | ||
US10/953,802 US7138767B2 (en) | 2004-09-30 | 2004-09-30 | Surface wave plasma processing system and method of using |
PCT/US2005/028506 WO2006038984A1 (en) | 2004-09-30 | 2005-08-10 | Surface wave plasma processing system and method of using |
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JP2008515163A true JP2008515163A (ja) | 2008-05-08 |
JP5122966B2 JP5122966B2 (ja) | 2013-01-16 |
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US (1) | US7138767B2 (ja) |
JP (1) | JP5122966B2 (ja) |
KR (1) | KR101098141B1 (ja) |
CN (1) | CN101023505B (ja) |
TW (1) | TWI310576B (ja) |
WO (1) | WO2006038984A1 (ja) |
Cited By (1)
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TW200620373A (en) | 2006-06-16 |
JP5122966B2 (ja) | 2013-01-16 |
US20060071607A1 (en) | 2006-04-06 |
KR20070101228A (ko) | 2007-10-16 |
WO2006038984A1 (en) | 2006-04-13 |
CN101023505A (zh) | 2007-08-22 |
CN101023505B (zh) | 2010-05-12 |
TWI310576B (en) | 2009-06-01 |
US7138767B2 (en) | 2006-11-21 |
KR101098141B1 (ko) | 2011-12-26 |
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