JP2008511167A - ゲート・スタックをエッチングするための方法およびシステム - Google Patents

ゲート・スタックをエッチングするための方法およびシステム Download PDF

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Publication number
JP2008511167A
JP2008511167A JP2007529849A JP2007529849A JP2008511167A JP 2008511167 A JP2008511167 A JP 2008511167A JP 2007529849 A JP2007529849 A JP 2007529849A JP 2007529849 A JP2007529849 A JP 2007529849A JP 2008511167 A JP2008511167 A JP 2008511167A
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JP
Japan
Prior art keywords
gas
substrate
etching
process gas
tera
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JP2007529849A
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English (en)
Japanese (ja)
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JP2008511167A5 (https=
Inventor
アニー・ワイ・シァ
宏政 持木
アルパン・ピー・マホロワラ
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International Business Machines Corp
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International Business Machines Corp
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Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JP2008511167A publication Critical patent/JP2008511167A/ja
Publication of JP2008511167A5 publication Critical patent/JP2008511167A5/ja
Withdrawn legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/20Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/20Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/71Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials

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  • Drying Of Semiconductors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2007529849A 2004-08-26 2005-06-30 ゲート・スタックをエッチングするための方法およびシステム Withdrawn JP2008511167A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/926,404 US20060049139A1 (en) 2004-08-26 2004-08-26 Method and system for etching a gate stack
PCT/US2005/023943 WO2006025944A1 (en) 2004-08-26 2005-06-30 Method and system for etching a gate stack

Publications (2)

Publication Number Publication Date
JP2008511167A true JP2008511167A (ja) 2008-04-10
JP2008511167A5 JP2008511167A5 (https=) 2008-07-31

Family

ID=35058277

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007529849A Withdrawn JP2008511167A (ja) 2004-08-26 2005-06-30 ゲート・スタックをエッチングするための方法およびシステム

Country Status (5)

Country Link
US (1) US20060049139A1 (https=)
JP (1) JP2008511167A (https=)
KR (1) KR20070051846A (https=)
TW (1) TWI286840B (https=)
WO (1) WO2006025944A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8092695B2 (en) * 2006-10-30 2012-01-10 Applied Materials, Inc. Endpoint detection for photomask etching
US9028924B2 (en) * 2010-03-25 2015-05-12 Novellus Systems, Inc. In-situ deposition of film stacks
US8741394B2 (en) 2010-03-25 2014-06-03 Novellus Systems, Inc. In-situ deposition of film stacks
US9165788B2 (en) 2012-04-06 2015-10-20 Novellus Systems, Inc. Post-deposition soft annealing
US9117668B2 (en) 2012-05-23 2015-08-25 Novellus Systems, Inc. PECVD deposition of smooth silicon films
US9388491B2 (en) 2012-07-23 2016-07-12 Novellus Systems, Inc. Method for deposition of conformal films with catalysis assisted low temperature CVD

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3729728A (en) * 1971-05-10 1973-04-24 Spearhead Inc Capacitive switching device
US3986372A (en) * 1976-01-16 1976-10-19 Whirlpool Corporation Appliance programmer including a safety circuit
US4748296A (en) * 1986-12-03 1988-05-31 General Electric Company Push-to-start control switch
US5161393A (en) * 1991-06-28 1992-11-10 General Electric Company Electronic washer control including automatic load size determination, fabric blend determination and adjustable washer means
IT226476Z2 (it) * 1992-04-14 1997-06-24 Whirlpool Italia Dispositivo atto a controllare e comandare il funzionamento di una lavabiancheria o similare o altro elettrodomestico quale piano di cottura forno o similare con manopola servoassistita
US5301523A (en) * 1992-08-27 1994-04-12 General Electric Company Electronic washer control including automatic balance, spin and brake operations
US5464955A (en) * 1993-04-15 1995-11-07 Emerson Electric Co. Backlit appliance control console
JP3193265B2 (ja) * 1995-05-20 2001-07-30 東京エレクトロン株式会社 プラズマエッチング装置
US5668359A (en) * 1996-03-01 1997-09-16 Eaton Corporation Multiple switch assembly including spring biased rotary cam with concentric cam tracks for selectively operating switches
US6316167B1 (en) * 2000-01-10 2001-11-13 International Business Machines Corporation Tunabale vapor deposited materials as antireflective coatings, hardmasks and as combined antireflective coating/hardmasks and methods of fabrication thereof and application thereof
DE19928229A1 (de) * 1999-06-19 2000-12-21 Mannesmann Vdo Ag Versenkbarer Drehknopf
EP1520346B1 (de) * 2001-02-24 2008-01-23 Marquardt GmbH Einrichtung zur drehwinkeleinstellung
US7196604B2 (en) * 2001-05-30 2007-03-27 Tt Electronics Technology Limited Sensing apparatus and method
US6862482B2 (en) * 2001-08-06 2005-03-01 Emerson Electric Co. Appliance control system with LED operation indicators
US6813524B2 (en) * 2001-08-06 2004-11-02 Emerson Electric Co. Appliance control system with auxiliary inputs
US6727443B2 (en) * 2001-08-06 2004-04-27 Emerson Electric Co. Appliance control system with knob control assembly
JP2003124189A (ja) * 2001-10-10 2003-04-25 Fujitsu Ltd 半導体装置の製造方法
DE10203509B4 (de) * 2002-01-30 2005-01-13 Whirlpool Corp., Benton Harbor Rastvorrichtung für einen mehrstufigen Drehschalter
KR100915231B1 (ko) * 2002-05-17 2009-09-02 삼성전자주식회사 저유전율 절연막의 증착방법, 이를 이용한 박막트랜지스터및 그 제조방법
US6630395B1 (en) * 2002-10-24 2003-10-07 International Business Machines Corporation Methods for fabricating electrical connections to semiconductor structures incorporating low-k dielectric materials
US6869542B2 (en) * 2003-03-12 2005-03-22 International Business Machines Corporation Hard mask integrated etch process for patterning of silicon oxide and other dielectric materials
US7199046B2 (en) * 2003-11-14 2007-04-03 Tokyo Electron Ltd. Structure comprising tunable anti-reflective coating and method of forming thereof

Also Published As

Publication number Publication date
KR20070051846A (ko) 2007-05-18
WO2006025944A1 (en) 2006-03-09
TW200612554A (en) 2006-04-16
TWI286840B (en) 2007-09-11
US20060049139A1 (en) 2006-03-09

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