KR20070051846A - 게이트 스택 에칭을 위한 방법 및 시스템 - Google Patents

게이트 스택 에칭을 위한 방법 및 시스템 Download PDF

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Publication number
KR20070051846A
KR20070051846A KR1020077002485A KR20077002485A KR20070051846A KR 20070051846 A KR20070051846 A KR 20070051846A KR 1020077002485 A KR1020077002485 A KR 1020077002485A KR 20077002485 A KR20077002485 A KR 20077002485A KR 20070051846 A KR20070051846 A KR 20070051846A
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KR
South Korea
Prior art keywords
gas
substrate
plasma processing
plasma
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020077002485A
Other languages
English (en)
Korean (ko)
Inventor
애니 와이 시아
히로마사 모치키
앨판 피 마호로와라
Original Assignee
동경 엘렉트론 주식회사
인터내셔널 비지네스 머신즈 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 동경 엘렉트론 주식회사, 인터내셔널 비지네스 머신즈 코포레이션 filed Critical 동경 엘렉트론 주식회사
Publication of KR20070051846A publication Critical patent/KR20070051846A/ko
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials

Landscapes

  • Drying Of Semiconductors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020077002485A 2004-08-26 2005-06-30 게이트 스택 에칭을 위한 방법 및 시스템 Withdrawn KR20070051846A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/926,404 US20060049139A1 (en) 2004-08-26 2004-08-26 Method and system for etching a gate stack
US10/926,404 2004-08-26

Publications (1)

Publication Number Publication Date
KR20070051846A true KR20070051846A (ko) 2007-05-18

Family

ID=35058277

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077002485A Withdrawn KR20070051846A (ko) 2004-08-26 2005-06-30 게이트 스택 에칭을 위한 방법 및 시스템

Country Status (5)

Country Link
US (1) US20060049139A1 (https=)
JP (1) JP2008511167A (https=)
KR (1) KR20070051846A (https=)
TW (1) TWI286840B (https=)
WO (1) WO2006025944A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8092695B2 (en) * 2006-10-30 2012-01-10 Applied Materials, Inc. Endpoint detection for photomask etching
US9028924B2 (en) * 2010-03-25 2015-05-12 Novellus Systems, Inc. In-situ deposition of film stacks
US8741394B2 (en) 2010-03-25 2014-06-03 Novellus Systems, Inc. In-situ deposition of film stacks
US9165788B2 (en) 2012-04-06 2015-10-20 Novellus Systems, Inc. Post-deposition soft annealing
US9117668B2 (en) 2012-05-23 2015-08-25 Novellus Systems, Inc. PECVD deposition of smooth silicon films
US9388491B2 (en) 2012-07-23 2016-07-12 Novellus Systems, Inc. Method for deposition of conformal films with catalysis assisted low temperature CVD

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3729728A (en) * 1971-05-10 1973-04-24 Spearhead Inc Capacitive switching device
US3986372A (en) * 1976-01-16 1976-10-19 Whirlpool Corporation Appliance programmer including a safety circuit
US4748296A (en) * 1986-12-03 1988-05-31 General Electric Company Push-to-start control switch
US5161393A (en) * 1991-06-28 1992-11-10 General Electric Company Electronic washer control including automatic load size determination, fabric blend determination and adjustable washer means
IT226476Z2 (it) * 1992-04-14 1997-06-24 Whirlpool Italia Dispositivo atto a controllare e comandare il funzionamento di una lavabiancheria o similare o altro elettrodomestico quale piano di cottura forno o similare con manopola servoassistita
US5301523A (en) * 1992-08-27 1994-04-12 General Electric Company Electronic washer control including automatic balance, spin and brake operations
US5464955A (en) * 1993-04-15 1995-11-07 Emerson Electric Co. Backlit appliance control console
JP3193265B2 (ja) * 1995-05-20 2001-07-30 東京エレクトロン株式会社 プラズマエッチング装置
US5668359A (en) * 1996-03-01 1997-09-16 Eaton Corporation Multiple switch assembly including spring biased rotary cam with concentric cam tracks for selectively operating switches
US6316167B1 (en) * 2000-01-10 2001-11-13 International Business Machines Corporation Tunabale vapor deposited materials as antireflective coatings, hardmasks and as combined antireflective coating/hardmasks and methods of fabrication thereof and application thereof
DE19928229A1 (de) * 1999-06-19 2000-12-21 Mannesmann Vdo Ag Versenkbarer Drehknopf
EP1520346B1 (de) * 2001-02-24 2008-01-23 Marquardt GmbH Einrichtung zur drehwinkeleinstellung
US7196604B2 (en) * 2001-05-30 2007-03-27 Tt Electronics Technology Limited Sensing apparatus and method
US6862482B2 (en) * 2001-08-06 2005-03-01 Emerson Electric Co. Appliance control system with LED operation indicators
US6813524B2 (en) * 2001-08-06 2004-11-02 Emerson Electric Co. Appliance control system with auxiliary inputs
US6727443B2 (en) * 2001-08-06 2004-04-27 Emerson Electric Co. Appliance control system with knob control assembly
JP2003124189A (ja) * 2001-10-10 2003-04-25 Fujitsu Ltd 半導体装置の製造方法
DE10203509B4 (de) * 2002-01-30 2005-01-13 Whirlpool Corp., Benton Harbor Rastvorrichtung für einen mehrstufigen Drehschalter
KR100915231B1 (ko) * 2002-05-17 2009-09-02 삼성전자주식회사 저유전율 절연막의 증착방법, 이를 이용한 박막트랜지스터및 그 제조방법
US6630395B1 (en) * 2002-10-24 2003-10-07 International Business Machines Corporation Methods for fabricating electrical connections to semiconductor structures incorporating low-k dielectric materials
US6869542B2 (en) * 2003-03-12 2005-03-22 International Business Machines Corporation Hard mask integrated etch process for patterning of silicon oxide and other dielectric materials
US7199046B2 (en) * 2003-11-14 2007-04-03 Tokyo Electron Ltd. Structure comprising tunable anti-reflective coating and method of forming thereof

Also Published As

Publication number Publication date
JP2008511167A (ja) 2008-04-10
WO2006025944A1 (en) 2006-03-09
TW200612554A (en) 2006-04-16
TWI286840B (en) 2007-09-11
US20060049139A1 (en) 2006-03-09

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Legal Events

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PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

PC1203 Withdrawal of no request for examination

St.27 status event code: N-1-6-B10-B12-nap-PC1203

WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid
P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000