JP2008505991A5 - - Google Patents

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Publication number
JP2008505991A5
JP2008505991A5 JP2007517009A JP2007517009A JP2008505991A5 JP 2008505991 A5 JP2008505991 A5 JP 2008505991A5 JP 2007517009 A JP2007517009 A JP 2007517009A JP 2007517009 A JP2007517009 A JP 2007517009A JP 2008505991 A5 JP2008505991 A5 JP 2008505991A5
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JP
Japan
Prior art keywords
formulation according
optical
printing ink
formulation
fet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007517009A
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English (en)
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JP2008505991A (ja
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Publication date
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Priority claimed from PCT/EP2005/004338 external-priority patent/WO2005112144A1/en
Publication of JP2008505991A publication Critical patent/JP2008505991A/ja
Publication of JP2008505991A5 publication Critical patent/JP2008505991A5/ja
Pending legal-status Critical Current

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Description

溶媒の沸点は、好ましくは１００℃またはこれ以上、極めて好ましくは１６０℃またはこれ以上、最も好ましくは１７０℃またはこれ以上でなければならない。
溶媒の粘度は、好ましくは４ｍＰａ・ｓより低く、極めて好ましくは３ｍＰａ・ｓより低くなければならない。

Claims (8)

  1. 溶媒が、インダンであることを特徴とする、請求項４に記載の配合物。
  2. 溶媒が、テトラリンであることを特徴とする、請求項４に記載の配合物。
  3. 式ＩＩ中の重合度またはｎが、２〜５０００の整数であることを特徴とする、請求項９または１０に記載の配合物。
  4. 請求項１〜１２のいずれかに記載の配合物または請求項１６に記載の印刷インクから得られた、半導体または電荷移動材料、素子またはデバイス。
  5. 請求項１〜１２のいずれかに記載の配合物または請求項１６に記載の印刷インクの、電荷移動、半導電性、導電性、光伝導または発光特性を有し、光学的、電気光学的もしくは電子素子もしくはデバイス、有機電界効果トランジスタ（ＯＦＥＴ）、集積回路（ＩＣ）、薄層トランジスタ（ＴＦＴ）、フラットパネルディスプレイ、高周波識別（ＲＦＩＤ）タグ、エレクトロルミネセントもしくはフォトルミネセントデバイスもしくは素子、有機発光ダイオード（ＯＬＥＤ）、ディスプレイのバックライト、光起電もしくはセンサーデバイス、電荷注入層、ショットキーダイオード、平坦化層、帯電防止フィルム、導電性基板もしくはパターン、電池における電極材料、光伝導体、電子写真用途、電子写真記録、有機記憶デバイス、配向層、化粧品もしくは医薬組成物において、またはＤＮＡ配列を検出し、識別するために用いることができる材料、素子またはデバイスを製造または加工するための使用。
  6. 請求項１〜１２のいずれかに記載の配合物もしくは請求項１６に記載の印刷インクまたは請求項１７に記載の半導電性もしくは電荷移動材料、素子もしくはデバイスから得られた、光学的、電気光学的または電子素子、ＦＥＴ、集積回路（ＩＣ）、ＴＦＴまたはＯＬＥＤ。
  7. 請求項１〜１２のいずれかに記載の配合物もしくは請求項１６に記載の印刷インク、請求項１７に記載の半導電性もしくは電荷移動材料、素子もしくはデバイスまたは請求項１９に記載のＦＥＴ、ＩＣ、ＴＦＴもしくはＯＬＥＤを含む、フラットパネルディスプレイ用のＴＦＴまたはＴＦＴアレイ、高周波識別（ＲＦＩＤ）タグ、エレクトロルミネセントディスプレイまたはバックライト。
  8. 請求項２０に記載のＦＥＴまたはＲＦＩＤタグを含む、セキュリティーマーキングまたはデバイス。
JP2007517009A 2004-05-18 2005-04-22 半導電性ポリマーを含むインクジェット印刷用の配合物 Pending JP2008505991A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP04011711 2004-05-18
PCT/EP2005/004338 WO2005112144A1 (en) 2004-05-18 2005-04-22 Formulation for ink-jet printing comprising semiconducting polymers

Publications (2)

Publication Number Publication Date
JP2008505991A JP2008505991A (ja) 2008-02-28
JP2008505991A5 true JP2008505991A5 (ja) 2008-06-19

Family

ID=34968130

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007517009A Pending JP2008505991A (ja) 2004-05-18 2005-04-22 半導電性ポリマーを含むインクジェット印刷用の配合物

Country Status (7)

Country Link
US (1) US7510672B2 (ja)
EP (1) EP1747595A1 (ja)
JP (1) JP2008505991A (ja)
KR (1) KR20070015586A (ja)
CN (1) CN1957484A (ja)
TW (1) TW200616267A (ja)
WO (1) WO2005112144A1 (ja)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BRPI0519478A2 (pt) 2004-12-27 2009-02-03 Quantum Paper Inc display emissivo endereÇÁvel e imprimÍvel
EP2139616B1 (en) * 2007-04-02 2018-08-29 Merck Patent GmbH Novel electrode
US8456393B2 (en) * 2007-05-31 2013-06-04 Nthdegree Technologies Worldwide Inc Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system
US9018833B2 (en) 2007-05-31 2015-04-28 Nthdegree Technologies Worldwide Inc Apparatus with light emitting or absorbing diodes
US9534772B2 (en) 2007-05-31 2017-01-03 Nthdegree Technologies Worldwide Inc Apparatus with light emitting diodes
US9419179B2 (en) 2007-05-31 2016-08-16 Nthdegree Technologies Worldwide Inc Diode for a printable composition
US8889216B2 (en) 2007-05-31 2014-11-18 Nthdegree Technologies Worldwide Inc Method of manufacturing addressable and static electronic displays
US8133768B2 (en) 2007-05-31 2012-03-13 Nthdegree Technologies Worldwide Inc Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system
US8809126B2 (en) 2007-05-31 2014-08-19 Nthdegree Technologies Worldwide Inc Printable composition of a liquid or gel suspension of diodes
US8415879B2 (en) 2007-05-31 2013-04-09 Nthdegree Technologies Worldwide Inc Diode for a printable composition
US8846457B2 (en) 2007-05-31 2014-09-30 Nthdegree Technologies Worldwide Inc Printable composition of a liquid or gel suspension of diodes
US8674593B2 (en) 2007-05-31 2014-03-18 Nthdegree Technologies Worldwide Inc Diode for a printable composition
US8877101B2 (en) 2007-05-31 2014-11-04 Nthdegree Technologies Worldwide Inc Method of manufacturing a light emitting, power generating or other electronic apparatus
US9425357B2 (en) 2007-05-31 2016-08-23 Nthdegree Technologies Worldwide Inc. Diode for a printable composition
US9343593B2 (en) 2007-05-31 2016-05-17 Nthdegree Technologies Worldwide Inc Printable composition of a liquid or gel suspension of diodes
US8852467B2 (en) 2007-05-31 2014-10-07 Nthdegree Technologies Worldwide Inc Method of manufacturing a printable composition of a liquid or gel suspension of diodes
US7888168B2 (en) * 2007-11-19 2011-02-15 Applied Materials, Inc. Solar cell contact formation process using a patterned etchant material
WO2009067475A1 (en) * 2007-11-19 2009-05-28 Applied Materials, Inc. Crystalline solar cell metallization methods
GB0803702D0 (en) 2008-02-28 2008-04-09 Isis Innovation Transparent conducting oxides
US8127477B2 (en) 2008-05-13 2012-03-06 Nthdegree Technologies Worldwide Inc Illuminating display systems
US7992332B2 (en) 2008-05-13 2011-08-09 Nthdegree Technologies Worldwide Inc. Apparatuses for providing power for illumination of a display object
US8309446B2 (en) 2008-07-16 2012-11-13 Applied Materials, Inc. Hybrid heterojunction solar cell fabrication using a doping layer mask
TW201027766A (en) * 2008-08-27 2010-07-16 Applied Materials Inc Back contact solar cells using printed dielectric barrier
WO2010032447A1 (ja) * 2008-09-19 2010-03-25 出光興産株式会社 有機エレクトロルミネッセンス材料組成物、薄膜形成方法及び有機エレクトロルミネッセンス素子
US8052895B2 (en) * 2008-10-09 2011-11-08 Xerox Corporation Semiconducting ink formulation
GB2466842B (en) * 2009-01-12 2011-10-26 Cambridge Display Tech Ltd Interlayer formulation for flat films
GB0915376D0 (en) 2009-09-03 2009-10-07 Isis Innovation Transparent conducting oxides
CN102906892B (zh) * 2010-03-25 2016-03-16 破立纪元有限公司 共轭聚合物及采用该聚合物的器件
ES2634551T3 (es) * 2010-04-03 2017-09-28 Praful Doshi Métodos para revestir una lente de contacto
US8916066B2 (en) 2010-05-27 2014-12-23 Corning Incorporated Polymeric fused thiophene semiconductor formulation
WO2012021301A1 (en) * 2010-08-13 2012-02-16 Massachusetts Institute Of Technology Interconnection between conducting polymer materials
JP5871720B2 (ja) * 2011-06-16 2016-03-01 株式会社ダイセル 印刷用溶剤又は溶剤組成物
WO2013106225A1 (en) 2012-01-12 2013-07-18 Applied Materials, Inc. Methods of manufacturing solar cell devices
FR2990300B1 (fr) 2012-05-04 2017-02-03 Disasolar Module photovoltaique et son procede de realisation.
WO2014035716A1 (en) * 2012-08-27 2014-03-06 Corning Incorporated Semiconducting fused thiophene polymer ink formulation
WO2015070104A2 (en) * 2013-11-07 2015-05-14 Dentsply International Inc. Pled dental matrix system
CN103756412A (zh) * 2013-12-16 2014-04-30 合肥工业大学 一种用于喷墨打印的混合喷墨溶剂
WO2015124272A1 (de) 2014-02-20 2015-08-27 Innovationlab Gmbh Konjugierte polymere
EA033944B1 (ru) * 2014-11-06 2019-12-12 Олтриа Клайент Сервисиз Ллк. Способы отслеживания и проверки подлинности товаров с использованием проводящей краски и товары
JP2018532269A (ja) * 2015-10-16 2018-11-01 ダウ グローバル テクノロジーズ エルエルシー 有機電荷輸送膜を作製するためのプロセス
JP6661365B2 (ja) * 2015-12-17 2020-03-11 東芝テック株式会社 インクジェットインク並びに有機薄膜太陽電池の製造方法及び製造装置
WO2018152546A1 (en) * 2017-02-20 2018-08-23 Kateeva, Inc. Inkjet printing systems and techniques for light-emitting devices with enhanced light outcoupling

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4737557A (en) 1986-03-20 1988-04-12 Agency Of Industrial Science And Technology 3-N-higher alkylthiophene polymer and composition thereof
US5069823A (en) 1989-03-29 1991-12-03 Agency Of Industrial Science And Technology Thiophene compound and method for production thereof
JPH02309616A (ja) 1989-05-24 1990-12-25 Nippon Chemicon Corp 固体電解コンデンサの製造方法
US5731229A (en) 1994-06-28 1998-03-24 Nissan Motor Co., Ltd. Method of producing device having minute structure
US5814376A (en) 1995-01-13 1998-09-29 Ohmicron Medical Diagnostics, Inc. Gravure coating systems and magnetic particles in electrochemical sensors
US5681381A (en) 1995-12-11 1997-10-28 Pitney Bowes Inc. Fluorescent red and magenta waterfast ink jet inks
JP3899566B2 (ja) 1996-11-25 2007-03-28 セイコーエプソン株式会社 有機ｅｌ表示装置の製造方法
US6087196A (en) 1998-01-30 2000-07-11 The Trustees Of Princeton University Fabrication of organic semiconductor devices using ink jet printing
US6166172A (en) 1999-02-10 2000-12-26 Carnegie Mellon University Method of forming poly-(3-substituted) thiophenes
KR100495740B1 (ko) * 1999-03-29 2005-06-17 세이코 엡슨 가부시키가이샤 조성물, 막의 제조방법, 및 기능 소자와 이의 제조방법
CA2395004C (en) 1999-12-21 2014-01-28 Plastic Logic Limited Solution processing
US6822629B2 (en) * 2000-08-18 2004-11-23 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
DE50207293D1 (de) 2001-03-10 2006-08-03 Merck Patent Gmbh Lösung und dispersionen organischer halbleiter
JP2003022892A (ja) 2001-07-06 2003-01-24 Semiconductor Energy Lab Co Ltd 発光装置の製造方法
JP4152665B2 (ja) * 2001-07-11 2008-09-17 株式会社半導体エネルギー研究所 発光装置及びその作製方法
DE10141624A1 (de) 2001-08-24 2003-03-06 Covion Organic Semiconductors Lösungen polymerer Halbleiter
US6956240B2 (en) 2001-10-30 2005-10-18 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US7141817B2 (en) * 2001-11-30 2006-11-28 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
WO2003089515A1 (fr) * 2002-04-22 2003-10-30 Konica Minolta Holdings, Inc. Composition de semi-conducteur organique, element semi-conducteur organique et procede pour les produire
JP2004047215A (ja) * 2002-07-10 2004-02-12 Toshiba Corp 有機ｅｌ素子および有機ｅｌ表示装置
US7307381B2 (en) * 2002-07-31 2007-12-11 Dai Nippon Printing Co., Ltd. Electroluminescent display and process for producing the same
JP2004071432A (ja) * 2002-08-08 2004-03-04 Dainippon Printing Co Ltd パターン形成体およびその製造方法
JP2004115695A (ja) * 2002-09-27 2004-04-15 Japan Science & Technology Corp ポリ（３−置換チオフェン）の製造方法

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