JP2008502134A5 - - Google Patents

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Publication number
JP2008502134A5
JP2008502134A5 JP2007515122A JP2007515122A JP2008502134A5 JP 2008502134 A5 JP2008502134 A5 JP 2008502134A5 JP 2007515122 A JP2007515122 A JP 2007515122A JP 2007515122 A JP2007515122 A JP 2007515122A JP 2008502134 A5 JP2008502134 A5 JP 2008502134A5
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JP
Japan
Prior art keywords
substrate
lower portion
moving
processing system
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2007515122A
Other languages
English (en)
Japanese (ja)
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JP2008502134A (ja
Filing date
Publication date
Priority claimed from US10/859,975 external-priority patent/US20050269291A1/en
Application filed filed Critical
Publication of JP2008502134A publication Critical patent/JP2008502134A/ja
Publication of JP2008502134A5 publication Critical patent/JP2008502134A5/ja
Withdrawn legal-status Critical Current

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JP2007515122A 2004-06-04 2005-05-06 基材を処理するためのプロセス加工システムを動作させる方法 Withdrawn JP2008502134A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/859,975 US20050269291A1 (en) 2004-06-04 2004-06-04 Method of operating a processing system for treating a substrate
PCT/US2005/015928 WO2005122215A1 (fr) 2004-06-04 2005-05-06 Procede de fonctionnement d'un systeme de traitement destine au traitement d'un substrat

Publications (2)

Publication Number Publication Date
JP2008502134A JP2008502134A (ja) 2008-01-24
JP2008502134A5 true JP2008502134A5 (fr) 2008-05-22

Family

ID=34969045

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007515122A Withdrawn JP2008502134A (ja) 2004-06-04 2005-05-06 基材を処理するためのプロセス加工システムを動作させる方法

Country Status (3)

Country Link
US (1) US20050269291A1 (fr)
JP (1) JP2008502134A (fr)
WO (1) WO2005122215A1 (fr)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7029536B2 (en) * 2003-03-17 2006-04-18 Tokyo Electron Limited Processing system and method for treating a substrate
JP4723871B2 (ja) * 2004-06-23 2011-07-13 株式会社日立ハイテクノロジーズ ドライエッチング装置
US7795148B2 (en) * 2006-03-28 2010-09-14 Tokyo Electron Limited Method for removing damaged dielectric material
US7718032B2 (en) 2006-06-22 2010-05-18 Tokyo Electron Limited Dry non-plasma treatment system and method of using
US20080078743A1 (en) * 2006-09-28 2008-04-03 Munoz Andres F Elevated temperature chemical oxide removal module and process
US20080217293A1 (en) * 2007-03-06 2008-09-11 Tokyo Electron Limited Processing system and method for performing high throughput non-plasma processing
US20100000684A1 (en) * 2008-07-03 2010-01-07 Jong Yong Choi Dry etching apparatus
US10224224B2 (en) 2017-03-10 2019-03-05 Micromaterials, LLC High pressure wafer processing systems and related methods
US10622214B2 (en) 2017-05-25 2020-04-14 Applied Materials, Inc. Tungsten defluorination by high pressure treatment
KR102574914B1 (ko) 2017-06-02 2023-09-04 어플라이드 머티어리얼스, 인코포레이티드 보론 카바이드 하드마스크의 건식 스트리핑
US10269571B2 (en) 2017-07-12 2019-04-23 Applied Materials, Inc. Methods for fabricating nanowire for semiconductor applications
US10234630B2 (en) 2017-07-12 2019-03-19 Applied Materials, Inc. Method for creating a high refractive index wave guide
KR102405723B1 (ko) 2017-08-18 2022-06-07 어플라이드 머티어리얼스, 인코포레이티드 고압 및 고온 어닐링 챔버
US10276411B2 (en) 2017-08-18 2019-04-30 Applied Materials, Inc. High pressure and high temperature anneal chamber
JP7274461B2 (ja) 2017-09-12 2023-05-16 アプライド マテリアルズ インコーポレイテッド 保護バリア層を使用して半導体構造を製造する装置および方法
US10643867B2 (en) 2017-11-03 2020-05-05 Applied Materials, Inc. Annealing system and method
CN111357090B (zh) 2017-11-11 2024-01-05 微材料有限责任公司 用于高压处理腔室的气体输送系统
JP7330181B2 (ja) 2017-11-16 2023-08-21 アプライド マテリアルズ インコーポレイテッド 高圧蒸気アニール処理装置
KR20200075892A (ko) 2017-11-17 2020-06-26 어플라이드 머티어리얼스, 인코포레이티드 고압 처리 시스템을 위한 컨덴서 시스템
CN111699549A (zh) 2018-01-24 2020-09-22 应用材料公司 使用高压退火的接缝弥合
KR20230079236A (ko) 2018-03-09 2023-06-05 어플라이드 머티어리얼스, 인코포레이티드 금속 함유 재료들을 위한 고압 어닐링 프로세스
US10714331B2 (en) 2018-04-04 2020-07-14 Applied Materials, Inc. Method to fabricate thermally stable low K-FinFET spacer
US10950429B2 (en) 2018-05-08 2021-03-16 Applied Materials, Inc. Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom
US10566188B2 (en) 2018-05-17 2020-02-18 Applied Materials, Inc. Method to improve film stability
US10704141B2 (en) 2018-06-01 2020-07-07 Applied Materials, Inc. In-situ CVD and ALD coating of chamber to control metal contamination
US10748783B2 (en) 2018-07-25 2020-08-18 Applied Materials, Inc. Gas delivery module
US10675581B2 (en) 2018-08-06 2020-06-09 Applied Materials, Inc. Gas abatement apparatus
WO2020092002A1 (fr) 2018-10-30 2020-05-07 Applied Materials, Inc. Procédés de gravure d'une structure pour des applications de semi-conducteur
KR20210077779A (ko) 2018-11-16 2021-06-25 어플라이드 머티어리얼스, 인코포레이티드 강화된 확산 프로세스를 사용한 막 증착
WO2020117462A1 (fr) 2018-12-07 2020-06-11 Applied Materials, Inc. Système de traitement de semi-conducteurs
US11901222B2 (en) 2020-02-17 2024-02-13 Applied Materials, Inc. Multi-step process for flowable gap-fill film

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US5186120A (en) * 1989-03-22 1993-02-16 Mitsubishi Denki Kabushiki Kaisha Mixture thin film forming apparatus
JP2598353B2 (ja) * 1991-12-04 1997-04-09 アネルバ株式会社 基板処理装置、基板搬送装置及び基板交換方法
US5558482A (en) * 1992-07-29 1996-09-24 Tokyo Electron Limited Multi-chamber system
JP4048387B2 (ja) * 1997-09-10 2008-02-20 東京エレクトロン株式会社 ロードロック機構及び処理装置
US6409837B1 (en) * 1999-01-13 2002-06-25 Tokyo Electron Limited Processing system and method for chemical vapor deposition of a metal layer using a liquid precursor
US6302966B1 (en) * 1999-11-15 2001-10-16 Lam Research Corporation Temperature control system for plasma processing apparatus
US6352623B1 (en) * 1999-12-17 2002-03-05 Nutool, Inc. Vertically configured chamber used for multiple processes
US6951821B2 (en) * 2003-03-17 2005-10-04 Tokyo Electron Limited Processing system and method for chemically treating a substrate

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