JP2008308590A - Epoxy resin composition for semiconductor sealing and semiconductor device - Google Patents

Epoxy resin composition for semiconductor sealing and semiconductor device Download PDF

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JP2008308590A
JP2008308590A JP2007158009A JP2007158009A JP2008308590A JP 2008308590 A JP2008308590 A JP 2008308590A JP 2007158009 A JP2007158009 A JP 2007158009A JP 2007158009 A JP2007158009 A JP 2007158009A JP 2008308590 A JP2008308590 A JP 2008308590A
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epoxy resin
resin composition
formula
semiconductor
phenol
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JP5177480B2 (en
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Kenichi Kuboki
健一 窪木
Takao Sunaga
高男 須永
Katsuhiko Oshimi
克彦 押見
Masataka Nakanishi
政隆 中西
Koichi Kawai
宏一 川井
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Nippon Kayaku Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide an epoxy resin composition for semiconductor sealing giving a cured material having flame-retardancy, without using a flame-retardant such as a halogen compound and an antimony compound. <P>SOLUTION: The epoxy resin composition for semiconductor sealing contains an epoxy resin produced by using a phenolic resin prepared by polymerizing phenol and dicyclopentadiene with an acid catalyst as a raw material and carrying out dehydrochlorination reaction of the material with epichlorohydrin, a curing agent comprising a phenolic resin prepared by reacting phenol with a bishalogenomethylbenzene, an inorganic filler and, optionally, a cure accelerator. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は難燃性、耐湿性に優れた硬化物を与える半導体封止用エポキシ樹脂組成物に関する。 The present invention relates to an epoxy resin composition for semiconductor encapsulation that gives a cured product excellent in flame retardancy and moisture resistance.

近年、半導体素子の高性能化ならびに使用分野・環境の多様化に伴い、半導体パッケージには小型化、軽量化、薄型化などの形状の要求や、高温や高湿条件化での耐久性の要求が益々高まっている。また、昨今の環境問題に対する意識の高まりにより、半田の鉛フリー化、パッケージのノンハロゲン・ノンアンチモン難燃化が要求されている。特許文献1にはエポキシ樹脂と硬化剤が共にフェノールアラルキル構造を有するエポキシ樹脂組成物の硬化物がノンハロゲン・ノンアンチモンで難燃性を発現出来る事が記載されている。一方同文献ではジシクロペンタジエン・フェノール重合体の構造は比較例において難燃性が著しく劣ることが記載されている。また、特許文献2においてはジシクロペンタジエン・フェノール重合体のエポキシ樹脂と硬化剤としてフェノールアラルキル樹脂の組み合わせが記載されており、ノンハロゲン・ノンアンチモンの系では無機充填剤が89%以上でV−0を達成していることが記載されている。しかしながら、特許文献1の系の場合コストが下がりにくいため、高い製品すなわち市場に出回る絶対量の少ない製品ほど環境対応に優れるというジレンマを解決できないという問題がある。また、特許文献2の系では無機充填剤の高充填でV−0を達成しているため、現在主流である銅系リードフレームの半導体装置の場合には封止材との線膨張が合わなくなるという問題が発生する。 In recent years, as semiconductor devices have become more sophisticated and their fields of use and environments have diversified, semiconductor packages have been required to be smaller, lighter, thinner, and more durable at high temperatures and high humidity. Is growing more and more. In addition, due to the recent increase in awareness of environmental problems, there is a demand for lead-free solder and non-halogen / non-antimony flame retardant packaging. Patent Document 1 describes that a cured product of an epoxy resin composition in which both an epoxy resin and a curing agent have a phenol aralkyl structure can exhibit flame retardancy with non-halogen / non-antimony. On the other hand, this document describes that the structure of dicyclopentadiene / phenol polymer is significantly inferior in flame retardancy in the comparative example. Patent Document 2 describes a combination of an epoxy resin of dicyclopentadiene / phenol polymer and a phenol aralkyl resin as a curing agent. In a non-halogen / non-antimony system, the inorganic filler is 89% or more and V-0. It is described that the above is achieved. However, in the case of the system of Patent Document 1, since the cost is unlikely to decrease, there is a problem that a dilemma that a higher product, that is, a product with a smaller absolute quantity on the market, is more environmentally friendly cannot be solved. Further, in the system of Patent Document 2, V-0 is achieved by high filling with an inorganic filler, and therefore, in the case of a semiconductor device of a copper-based lead frame which is currently mainstream, the linear expansion with the sealing material is not suitable. The problem occurs.

特許第3349963号公報Japanese Patent No. 3349963 特開平8−301984号公報JP-A-8-301984

本発明はハロゲン化合物やアンチモン化合物などの難燃剤を使用することなく、その硬化物において難燃性を付与し、且つ優れた耐湿性を有する半導体封止用エポキシ樹脂組成物および半導体装置を提供することを目的とする。 The present invention provides an epoxy resin composition for semiconductor encapsulation and a semiconductor device that imparts flame retardancy to the cured product and has excellent moisture resistance without using a flame retardant such as a halogen compound or an antimony compound. For the purpose.

本発明者らは前記課題を解決するために鋭意研究した結果、本発明を完成させるに到った。   As a result of intensive studies to solve the above problems, the present inventors have completed the present invention.

すなわち本発明は
(1)式(1)

Figure 2008308590
(式中、nは平均値であり1<n≦3を表す。)で表されるエポキシ樹脂、式(2)
Figure 2008308590
(式中、複数存在するRはそれぞれ独立して存在し、Rは水素原子または炭素数1〜4のアルキル基を表す。nは平均値であり1<n≦4を表す。)で表され、下記式(a)
Figure 2008308590
(式中、複数存在するRはそれぞれ独立して存在し、Rは水素原子または炭素数1〜4のアルキル基を表す。)
で表される成分の含有割合が10重量%以上であるフェノール樹脂、無機充填剤および必要により硬化促進剤を含有する半導体封止用エポキシ樹脂組成物。
(2)無機充填剤の含有割合が75〜85重量%である上記(1)記載の半導体封止用エポキシ樹脂組成物。
(3)上記(1)または(2)記載の半導体封止用エポキシ樹脂組成物で半導体素子を封止した半導体装置。
(4)半導体素子が銅系のリードフレームに搭載されている、上記(3)記載の半導体装置。
を、提供するものである。 That is, the present invention relates to (1) formula (1)
Figure 2008308590
(Wherein n is an average value and represents 1 <n ≦ 3), an epoxy resin represented by formula (2)
Figure 2008308590
(Wherein a plurality of R's are present independently, R represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms. N is an average value and 1 <n ≦ 4). The following formula (a)
Figure 2008308590
(In the formula, a plurality of R's are present independently, and R represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms.)
An epoxy resin composition for encapsulating a semiconductor containing a phenol resin having a content ratio of 10% by weight or more, an inorganic filler, and, if necessary, a curing accelerator.
(2) The epoxy resin composition for semiconductor encapsulation according to the above (1), wherein the content of the inorganic filler is 75 to 85% by weight.
(3) A semiconductor device in which a semiconductor element is sealed with the epoxy resin composition for sealing a semiconductor according to (1) or (2).
(4) The semiconductor device according to (3), wherein the semiconductor element is mounted on a copper-based lead frame.
Is provided.

本発明の半導体封止用エポキシ樹脂組成物はハロゲン化合物やアンチモン化合物などの難燃剤を用いることなく、その硬化物において難燃性を有し、且つ高湿下での高信頼性を有するため、半導体素子を保護するのにきわめて有用である。 Since the epoxy resin composition for semiconductor encapsulation of the present invention has flame retardancy in the cured product without using a flame retardant such as a halogen compound or an antimony compound, and has high reliability under high humidity, It is extremely useful for protecting semiconductor devices.

本発明のエポキシ樹脂組成物は、前記式(1)で表されるエポキシ樹脂を含有する。式(1)のエポキシ樹脂は、フェノールとジシクロペンタジエンを酸触媒によって重合させることにより得られるフェノール樹脂を原料とし、エピクロロヒドリンと脱塩酸反応させることにより得られる。この時のフェノール仕込み割合を多くすると、低分子量物の含有割合が多くなり、結果として得られるエポキシ樹脂の軟化点が低くなる。本発明においては、通常式(1)のエポキシ樹脂として、軟化点が50℃〜80℃のものを用いる。軟化点が低い方が流動性及び難燃性は向上するが、耐熱性を上げるには軟化点が高いものを使用することが好ましい。 The epoxy resin composition of the present invention contains an epoxy resin represented by the formula (1). The epoxy resin of the formula (1) can be obtained by using a phenol resin obtained by polymerizing phenol and dicyclopentadiene with an acid catalyst as a raw material, and causing a dehydrochlorination reaction with epichlorohydrin. If the proportion of phenol charged at this time is increased, the content ratio of low molecular weight substances is increased, and the resulting epoxy resin has a lower softening point. In the present invention, an epoxy resin having a softening point of 50 to 80 ° C. is usually used as the epoxy resin of the formula (1). The lower the softening point, the better the fluidity and flame retardancy, but it is preferable to use a higher softening point in order to increase the heat resistance.

本発明のエポキシ樹脂組成物は、前記式(2)で表されるフェノール樹脂を含有する。式(2)のフェノール樹脂は必要により酸性触媒の存在下、フェノールとビスハロゲノメチルベンゼン類、ビスアルコキシメチルベンゼン類、キシリレングリコール類またはジビニルベンゼン類などとを反応させることにより得られる。
本発明においては、フェノールとビスハロゲノメチルベンゼン類、ビスアルコキシメチルベンゼン類、キシリレングリコール類またはジビニルベンゼン類の仕込み比をモル比で、前者:後者=1:0.65〜0.10で反応を行うことにより、下記式(a)

Figure 2008308590
(式中、複数存在するRはそれぞれ独立して存在し、Rは水素原子または炭素数1〜4のアルキル基を表す。)
で表される成分の含有割合が通常10重量%以上100重量%以下、好ましくは15重量%以上50重量%以下の範囲である式(2)の化合物を使用する。式(a)の化合物の含有割合は、通常ゲルパーミエーションクロマトグラフィー(GPC)で測定することができる。また式(2)の化合物において、低分量物の含有割合が多いとその軟化点が低くなる傾向にあり、本発明においては通常、その軟化点が50〜80℃のものを用いる。軟化点が低い方が流動性及び難燃性は向上するが、耐熱性を上げるには軟化点が高いもの使用することが好ましい。 The epoxy resin composition of the present invention contains a phenol resin represented by the formula (2). The phenol resin of formula (2) can be obtained by reacting phenol with bishalogenomethylbenzenes, bisalkoxymethylbenzenes, xylylene glycols or divinylbenzenes in the presence of an acidic catalyst if necessary.
In the present invention, the reaction ratio of phenol and bishalogenomethylbenzenes, bisalkoxymethylbenzenes, xylylene glycols or divinylbenzenes is molar ratio, the former: the latter = 1: 0.65-0.10. By performing the following formula (a)
Figure 2008308590
(In the formula, a plurality of R's are present independently, and R represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms.)
The compound represented by formula (2) is used in which the content of the component is usually in the range of 10 wt% to 100 wt%, preferably 15 wt% to 50 wt%. The content ratio of the compound of the formula (a) can be usually measured by gel permeation chromatography (GPC). Further, in the compound of the formula (2), when the content of the low fraction is large, the softening point tends to be low. In the present invention, those having a softening point of 50 to 80 ° C. are usually used. The lower the softening point, the better the fluidity and flame retardancy, but in order to increase the heat resistance, it is preferable to use a material with a higher softening point.

本発明のエポキシ樹脂組成物は無機充填剤を含有する。無機充填剤としては溶融シリカ、結晶性シリカ、アルミナ、炭酸カルシウム、ケイ酸カルシウム、硫酸バリウム、タルク、クレー、酸化マグネシウム、酸化アルミニウム、酸化ベリリウム、酸化鉄、酸化チタン、窒化アルミニウム、窒化ケイ素、窒化ホウ素、マイカ、ガラス、石英、雲母などが上げられるがこれらに限定されない。また2種以上を混合して使用しても良い。これら無機充填剤のうち、溶融シリカや結晶性シリカなどのシリカ類はコストが安く、電気信頼性も良好なため好ましい。無機充填剤の使用量は内割りで通常50重量%〜90重量%、好ましくは75重量%〜85重量%の範囲である。少なすぎると難燃性の効果が得られず、多すぎると封止する半導体素子が銅系リードフレームに搭載されている場合に封止樹脂とフレームの線膨張率が合わなくて、ヒートショックなどの熱応力による不具合が発生する可能性がある。 The epoxy resin composition of the present invention contains an inorganic filler. Inorganic fillers include fused silica, crystalline silica, alumina, calcium carbonate, calcium silicate, barium sulfate, talc, clay, magnesium oxide, aluminum oxide, beryllium oxide, iron oxide, titanium oxide, aluminum nitride, silicon nitride, and nitride Examples include, but are not limited to, boron, mica, glass, quartz, and mica. Two or more kinds may be mixed and used. Of these inorganic fillers, silicas such as fused silica and crystalline silica are preferred because of low cost and good electrical reliability. The amount of the inorganic filler used is usually in the range of 50% to 90% by weight, preferably 75% to 85% by weight. If the amount is too small, the flame retardant effect cannot be obtained. If the amount is too large, when the semiconductor element to be sealed is mounted on a copper lead frame, the linear expansion coefficient of the sealing resin and the frame does not match, and heat shock, etc. There is a possibility that a problem due to thermal stress will occur.

また本発明のエポキシ樹脂組成物においては必要により硬化促進剤を使用する。使用できる硬化促進剤の例としては2−メチルイミダゾール、2−エチルイミダゾール、2−エチル−4−メチルイミダゾールなどのイミダゾール類、2−(ジメチルアミノメチル)フェノール、1,8−ジアザ−ビシクロ(5,4,0)ウンデセン−7等の第3級アミン類、トリフェニルホスフィン、トリシクロヘキシルホスフィン、トリフェニルホスフィントリフェニルボランなどのホスフィン類、オクチル酸スズ等の金属化合物が挙げられる。硬化促進剤はエポキシ樹脂100重量部に対して0.02〜5.0重量部が必要に応じ用いられる。 Moreover, in the epoxy resin composition of this invention, a hardening accelerator is used if necessary. Examples of curing accelerators that can be used include imidazoles such as 2-methylimidazole, 2-ethylimidazole, 2-ethyl-4-methylimidazole, 2- (dimethylaminomethyl) phenol, 1,8-diaza-bicyclo (5 , 4, 0) tertiary amines such as undecene-7, phosphines such as triphenylphosphine, tricyclohexylphosphine, triphenylphosphine triphenylborane, and metal compounds such as tin octylate. If necessary, the curing accelerator is used in an amount of 0.02 to 5.0 parts by weight based on 100 parts by weight of the epoxy resin.

本発明のエポキシ樹脂組成物においては式(1)のエポキシ樹脂以外のエポキシ樹脂を併用しても良い。併用できる他のエポキシ樹脂の具体例としては、フェノール類(フェノール、アルキル置換フェノール、芳香族置換フェノール、ナフトール、アルキル置換ナフトール、ジヒドロキシベンゼン、アルキル置換ジヒドロキシベンゼン、ジヒドロキシナフタレン等)と各種アルデヒド(ホルムアルデヒド、アセトアルデヒド、アルキルアルデヒド、ベンズアルデヒド、アルキル置換ベンズアルデヒド、ヒドロキシベンズアルデヒド、ナフトアルデヒド、グルタルアルデヒド、フタルアルデヒド、クロトンアルデヒド、シンナムアルデヒド等)との重縮合物;フェノール類と各種ジエン化合物(テルペン類、ビニルシクロヘキセン、ノルボルナジエン、ビニルノルボルネン、テトラヒドロインデン、ジビニルベンゼン、ジビニルビフェニル、ジイソプロペニルビフェニル、ブタジエン、イソプレン等)との重合物、フェノール類とケトン類(アセトン、メチルエチルケトン、メチルイソブチルケトン、アセトフェノン、ベンゾフェノン等)との重縮合物;フェノール類とビスクロロメチルビフェニルとの重縮合物;フェノール類とビスクロロメチルベンゼンとの重縮合物;ビスフェノール類と各種アルデヒドの重縮合物またはアルコール類等をグリシジル化したグリシジルエーテル系エポキシ樹脂;4−ビニル−1−シクロヘキセンジエポキシドや3,4−エポキシシクロヘキシルメチル−3,4´−エポキシシクロヘキサンカルボキシラートなどを代表とする脂環式エポキシ樹脂;テトラグリシジルジアミノジフェニルメタン(TGDDM)やトリグリシジル−p−アミノフェノールなどを代表とするグリシジルアミン系エポキシ樹脂;グリシジルエステル系エポキシ樹脂等が挙げられるが、通常用いられるエポキシ樹脂であればこれらに限定されるものではない。これらは単独で用いてもよく、2種以上を用いてもよい。これらのエポキシ樹脂の全エポキシ樹脂中に占める割合は30重量%以下が好ましく、特に20重量%以下が好ましい。 In the epoxy resin composition of this invention, you may use together epoxy resins other than the epoxy resin of Formula (1). Specific examples of other epoxy resins that can be used in combination include phenols (phenol, alkyl-substituted phenol, aromatic-substituted phenol, naphthol, alkyl-substituted naphthol, dihydroxybenzene, alkyl-substituted dihydroxybenzene, dihydroxynaphthalene, etc.) and various aldehydes (formaldehyde, Polycondensates of acetaldehyde, alkyl aldehyde, benzaldehyde, alkyl-substituted benzaldehyde, hydroxybenzaldehyde, naphthaldehyde, glutaraldehyde, phthalaldehyde, crotonaldehyde, cinnamaldehyde, etc .; phenols and various diene compounds (terpenes, vinylcyclohexene, norbornadiene) , Vinyl norbornene, tetrahydroindene, divinylbenzene, divinylbiphenyl, diiso Polymers with lopenyl biphenyl, butadiene, isoprene, etc.), polycondensates of phenols with ketones (acetone, methyl ethyl ketone, methyl isobutyl ketone, acetophenone, benzophenone, etc.); polycondensation of phenols with bischloromethyl biphenyl Products; polycondensates of phenols and bischloromethylbenzene; glycidyl ether epoxy resins obtained by glycidylation of polycondensates of bisphenols and various aldehydes or alcohols; 4-vinyl-1-cyclohexene diepoxide and 3, Alicyclic epoxy resins such as 4-epoxycyclohexylmethyl-3,4'-epoxycyclohexanecarboxylate; tetraglycidyldiaminodiphenylmethane (TGDDM), triglycidyl-p-aminophenol, etc. Glycidylamine-based epoxy resins; glycidyl ester-based epoxy resins and the like, but are not limited to these as long as they are usually used epoxy resins. These may be used alone or in combination of two or more. The proportion of these epoxy resins in the total epoxy resin is preferably 30% by weight or less, particularly preferably 20% by weight or less.

本発明のエポキシ樹脂組成物においては式(2)のフェノール樹脂以外のエポキシ樹脂用硬化剤を併用しても良い。併用し得る硬化剤としてはアミン系化合物、酸無水物系化合物、アミド系化合物、フェノ−ル系化合物などが使用できる。使用できる硬化剤の具体例としては、ジアミノジフェニルメタン、ジエチレントリアミン、トリエチレンテトラミン、ジアミノジフェニルスルホン、イソホロンジアミン、ジシアンジアミド、リノレン酸の2量体とエチレンジアミンとより合成されるポリアミド樹脂等のアミン系化合物;無水フタル酸、無水トリメリット酸、無水ピロメリット酸、無水マレイン酸、テトラヒドロ無水フタル酸、メチルテトラヒドロ無水フタル酸、無水メチルナジック酸、ヘキサヒドロ無水フタル酸、メチルヘキサヒドロ無水フタル酸等の酸無水物系化合物;ビスフェノール類、フェノール類(フェノール、アルキル置換フェノール、芳香族置換フェノール、ナフトール、アルキル置換ナフトール、ジヒドロキシベンゼン、アルキル置換ジヒドロキシベンゼン、ジヒドロキシナフタレン等)と各種アルデヒド(ホルムアルデヒド、アセトアルデヒド、アルキルアルデヒド、ベンズアルデヒド、アルキル置換ベンズアルデヒド、ヒドロキシベンズアルデヒド、ナフトアルデヒド、グルタルアルデヒド、フタルアルデヒド、クロトンアルデヒド、シンナムアルデヒド等)との重縮合物、フェノール類と各種ジエン化合物(ジシクロペンタジエン、テルペン類、ビニルシクロヘキセン、ノルボルナジエン、ビニルノルボルネン、テトラヒドロインデン、ジビニルベンゼン、ジビニルビフェニル、ジイソプロペニルビフェニル、ブタジエン、イソプレン等)との重合物、フェノール類とケトン類(アセトン、メチルエチルケトン、メチルイソブチルケトン、アセトフェノン、ベンゾフェノン等)との重縮合物、フェノール類とビスクロロメチルビフェニルとの重縮合物、ビスフェノール類と各種アルデヒドの重縮合物、ビフェノール類及びこれらの変性物等のフェノ−ル系化合物;イミダゾ−ル、グアニジン誘導体等のアミド系化合物、BF3 −アミン錯体などが挙げられる。これらは単独で用いてもよく、2種以上を用いてもよい。これらの硬化剤の全硬化剤中に占める割合は30重量%以下が好ましく、特に20重量%以下が好ましい。 In the epoxy resin composition of this invention, you may use together the hardening | curing agent for epoxy resins other than the phenol resin of Formula (2). As the curing agent that can be used in combination, an amine compound, an acid anhydride compound, an amide compound, a phenol compound, and the like can be used. Specific examples of curing agents that can be used include amine compounds such as diaminodiphenylmethane, diethylenetriamine, triethylenetetramine, diaminodiphenylsulfone, isophoronediamine, dicyandiamide, and a polyamide resin synthesized from ethylenediamine with a dimer of linolenic acid; Acid anhydrides such as phthalic acid, trimellitic anhydride, pyromellitic anhydride, maleic anhydride, tetrahydrophthalic anhydride, methyltetrahydrophthalic anhydride, methyl nadic anhydride, hexahydrophthalic anhydride, methylhexahydrophthalic anhydride, etc. Compounds: bisphenols, phenols (phenol, alkyl-substituted phenol, aromatic-substituted phenol, naphthol, alkyl-substituted naphthol, dihydroxybenzene, alkyl-substituted dihydroxybenzene Polycondensates of dihydroxynaphthalene, etc.) with various aldehydes (formaldehyde, acetaldehyde, alkylaldehyde, benzaldehyde, alkyl-substituted benzaldehyde, hydroxybenzaldehyde, naphthaldehyde, glutaraldehyde, phthalaldehyde, crotonaldehyde, cinnamaldehyde, etc.), phenols and various Polymers with diene compounds (dicyclopentadiene, terpenes, vinylcyclohexene, norbornadiene, vinylnorbornene, tetrahydroindene, divinylbenzene, divinylbiphenyl, diisopropenylbiphenyl, butadiene, isoprene, etc.), phenols and ketones (acetone, Polycondensates with methyl ethyl ketone, methyl isobutyl ketone, acetophenone, benzophenone, etc.) Phenolic compounds such as polycondensates of phenols and bischloromethylbiphenyl, polycondensates of bisphenols and various aldehydes, biphenols and modified products thereof; amides such as imidazole and guanidine derivatives; Examples thereof include BF 3 -amine complex. These may be used alone or in combination of two or more. The proportion of these curing agents in the total curing agent is preferably 30% by weight or less, particularly preferably 20% by weight or less.

本発明のエポキシ樹脂組成物は成形時の金型との離型を良くするために離型剤を配合することができる。離型剤としては従来公知のものいずれも使用できるが、例えばカルナバワックス、モンタンワックスなどのエステル系ワックス、ステアリン酸、パルチミン酸などの脂肪酸およびこれらの金属塩、酸化ポリエチレン、非酸化ポリエチレンなどのポリオレフィン系ワックスなどが挙げられる。これらは単独で使用しても2種以上併用しても良い。これら離型剤の配合量は全有機成分に対して0.5〜3重量%が好ましい。これより少なすぎると金型からの離型が悪く、多すぎるとリードフレームなどとの接着が悪くなる。 The epoxy resin composition of the present invention can contain a release agent in order to improve the release from the mold during molding. Any conventionally known release agent can be used, for example, ester waxes such as carnauba wax and montan wax, fatty acids such as stearic acid and palmitic acid, and metal salts thereof, polyolefins such as polyethylene oxide and non-oxidized polyethylene And waxes. These may be used alone or in combination of two or more. The compounding amount of these release agents is preferably 0.5 to 3% by weight based on the total organic components. If the amount is too small, release from the mold is poor, and if the amount is too large, adhesion to the lead frame and the like is poor.

本発明のエポキシ樹脂組成物は無機充填剤と樹脂成分との接着性を高めるためにカップリング剤を配合することができる。カップリング剤としては従来公知のものをいずれも使用できるが、例えばビニルアルコキシシラン、エポキアルコキシシラン、スチリルアルコキシシラン、メタクリロキシアルコキシシラン、アクリロキシアルコキシシラン、アミノアルコキシシラン、メルカプトアルコキシシラン、イソシアナートアルコキシシランなどの各種アルコキシシラン化合物、アルコキシチタン化合物、アルミニウムキレート類などが挙げられる。これらは単独で使用しても2種以上併用しても良い。カップリング剤の添加方法は、カップリング剤であらかじめ無機充填剤表面を処理した後、樹脂と混練しても良いし、樹脂にカップリング剤を混合してから無機充填剤と混練しても良い。 The epoxy resin composition of the present invention can contain a coupling agent in order to enhance the adhesion between the inorganic filler and the resin component. Any conventionally known coupling agent can be used. For example, vinyl alkoxy silane, epoxy alkoxy silane, styryl alkoxy silane, methacryloxy alkoxy silane, acryloxy alkoxy silane, amino alkoxy silane, mercapto alkoxy silane, isocyanate alkoxy Examples include various alkoxysilane compounds such as silane, alkoxytitanium compounds, and aluminum chelates. These may be used alone or in combination of two or more. The coupling agent may be added by treating the surface of the inorganic filler with the coupling agent in advance and then kneading with the resin, or mixing the coupling agent with the resin and then kneading with the inorganic filler. .

更に本発明のエポキシ樹脂組成物には、必要に応じて公知の添加剤を配合することが出来る。用いうる添加剤の具体例としては、ポリブタジエン及びこの変性物、アクリロニトリル共重合体の変性物、ポリフェニレンエーテル、ポリスチレン、ポリエチレン、ポリイミド、フッ素樹脂、マレイミド系化合物、シアネートエステル系化合物、シリコーンゲル、シリコーンオイル、並びにカーボンブラック、フタロシアニンブルー、フタロシアニングリーン等の着色剤などが挙げられる。 Furthermore, a known additive can be blended in the epoxy resin composition of the present invention as necessary. Specific examples of additives that can be used include polybutadiene and modified products thereof, modified products of acrylonitrile copolymer, polyphenylene ether, polystyrene, polyethylene, polyimide, fluororesin, maleimide compounds, cyanate ester compounds, silicone gel, and silicone oil. And colorants such as carbon black, phthalocyanine blue, and phthalocyanine green.

本発明のエポキシ樹脂組成物は、各成分を均一に分散混合できる従来公知のいかなる手法を用いても製造することができる。例えば各成分を全て粉砕して粉砕化しヘンシェルミキサーなどで混合後、加熱ロールによる溶融混練、ニーダーによる溶融混練、特殊混合機による混合、あるいはこれら各方法の適切な組み合わせを用いることで調製される。また、本発明の半導体装置はリードフレームなどに搭載された半導体素子を、本発明のエポキシ樹脂組成物を用いてトランスファー成形などにより樹脂封止することで製造することができる。 The epoxy resin composition of the present invention can be produced by any conventionally known technique capable of uniformly dispersing and mixing each component. For example, all the components are pulverized and pulverized, mixed with a Henschel mixer, etc., then melt kneaded with a heating roll, melt kneaded with a kneader, mixed with a special mixer, or an appropriate combination of these methods. The semiconductor device of the present invention can be manufactured by resin-sealing a semiconductor element mounted on a lead frame or the like by transfer molding or the like using the epoxy resin composition of the present invention.

本発明の半導体装置は前記の本発明のエポキシ樹脂組成物で封止されたもの等の本発明のエポキシ樹脂組成物の硬化物を有する。半導体装置としては、例えばDIP(デュアルインラインパッケージ)、QFP(クワッドフラットパッケージ)、BGA(ボールグリッドアレイ)、CSP(チップサイズパッケージ)、SOP(スモールアウトラインパッケージ)、TSOP(シンスモールアウトラインパッケージ)、TQFP(シンクワッドフラットパッケージ)等が挙げられる。
また、熱放散性や高速電気特性の問題から銅系リードフレームを用いるのが好ましい。銅系のリードフレームとは、銅合金を素材とし、各種メッキ化工を施したリードフレームである。
The semiconductor device of the present invention has a cured product of the epoxy resin composition of the present invention such as the one sealed with the epoxy resin composition of the present invention. As semiconductor devices, for example, DIP (Dual Inline Package), QFP (Quad Flat Package), BGA (Ball Grid Array), CSP (Chip Size Package), SOP (Small Outline Package), TSOP (Thin Small Outline Package), TQFP (Sink Quad Flat Package).
Moreover, it is preferable to use a copper-based lead frame because of heat dissipation and high-speed electrical characteristics. The copper-based lead frame is a lead frame made of a copper alloy and subjected to various plating processes.

以下、実施例、比較例により本発明を具体的に説明する。 Hereinafter, the present invention will be specifically described with reference to Examples and Comparative Examples.

実施例1〜6および比較例1〜3
各種成分を表1の割合(重量部)で配合し、ミキシングロールで混練、タブレット化後、トランスファー成形で樹脂成形体を調製し、160℃で2時間、更に180℃で8時間硬化させ、硬化物の物性を測定した。結果を表1に示す。
なお、硬化物の物性は以下の要領で測定した。
・吸湿率:121℃で湿度100%の条件下で24時間保存後の重量増加率。試験片は直径50mm×厚み4mmの円盤。
・難燃性:UL94に準拠して行った。ただし、サンプルサイズは幅12.5mm×長さ150mmとし、厚さは0.8mmと1.6mmの2種類で試験を行った。
・残炎時間:5個1組のサンプルに10回接炎したあとの残炎時間の合計
Examples 1-6 and Comparative Examples 1-3
Various components are blended in the proportions (parts by weight) shown in Table 1, kneaded with a mixing roll, converted into a tablet, a resin molded product is prepared by transfer molding, cured at 160 ° C. for 2 hours, and further cured at 180 ° C. for 8 hours, and cured. The physical properties of the material were measured. The results are shown in Table 1.
In addition, the physical property of hardened | cured material was measured in the following ways.
Hygroscopicity: Weight increase rate after storage for 24 hours at 121 ° C. and 100% humidity. The test piece is a disk having a diameter of 50 mm and a thickness of 4 mm.
Flame retardance: Performed according to UL94. However, the sample size was 12.5 mm wide × 150 mm long, and the thickness was 0.8 mm and 1.6 mm.
・ Afterflame time: Total afterflame time after 10 times contact with 5 samples

Figure 2008308590
Figure 2008308590

注)
(E1):式(1)の化合物(商品名:XD−1000 日本化薬製 エポキシ当量254g/eq 軟化点74℃)
(E2):式(1)の化合物(商品名:XD−1000−L 日本化薬製 エポキシ当量245g/eq 軟化点66℃)
(E3):式(1)の化合物(商品名:XD−1000−2L 日本化薬製 エポキシ当量241g/eq 軟化点57℃)
(E4)下記式(3)の化合物
note)
(E1): Compound of formula (1) (trade name: XD-1000, Nippon Kayaku Epoxy equivalent 254 g / eq, softening point 74 ° C.)
(E2): Compound of formula (1) (trade name: XD-1000-L, Nippon Kayaku Epoxy equivalent 245 g / eq, softening point 66 ° C.)
(E3): Compound of formula (1) (trade name: XD-1000-2L, Nippon Kayaku Epoxy equivalent 241 g / eq, softening point 57 ° C.)
(E4) Compound of the following formula (3)

Figure 2008308590
(エポキシ当量238g/eq 軟化点52℃)
Figure 2008308590
(Epoxy equivalent 238 g / eq, softening point 52 ° C.)

(H1):式(2)の化合物(商品名:ミレックス XLC−LL 三井化学製 軟化点77℃ 水酸基当量176g/eq 式(a)の成分の含有割合は17重量%)
(H2):式(2)の化合物(商品名:ミレックス XLC−3L 三井化学製 軟化点71℃ 水酸基当量172g/eq 式(a)の成分の含有割合は21重量%)
(H3):式(2)の化合物(商品名:ミレックス XLC−4L 三井化学製 軟化点63℃ 水酸基当量170g/eq 式(a)の成分の含有割合は27重量%)
(H4):式(2)の化合物(商品名:ミレックス XL−225 三井化学製 軟化点91℃ 式(a)の成分の含有割合は8重量%)
*式(a)の成分の含有割合は下記のGPC条件で測定した。
カラム:Shodex KF-803+KF-802+KF-801
カラム温度:40℃
溶剤:テトラヒドロフラン
流量:1ml/min
検出:RI
(H1): Compound of formula (2) (trade name: Mirex XLC-LL, made by Mitsui Chemicals, softening point 77 ° C., hydroxyl equivalent 176 g / eq, content of component of formula (a) is 17% by weight)
(H2): Compound of formula (2) (trade name: Mirex XLC-3L, manufactured by Mitsui Chemicals, softening point 71 ° C., hydroxyl equivalent 172 g / eq, content of component of formula (a) is 21% by weight)
(H3): Compound of formula (2) (trade name: Mirex XLC-4L, manufactured by Mitsui Chemicals, softening point 63 ° C., hydroxyl equivalent 170 g / eq, content of component of formula (a) is 27% by weight)
(H4): Compound of formula (2) (trade name: Millex XL-225, manufactured by Mitsui Chemicals, softening point: 91 ° C. The content of the component of formula (a) is 8% by weight)
* The content ratio of the component of the formula (a) was measured under the following GPC conditions.
Column: Shodex KF-803 + KF-802 + KF-801
Column temperature: 40 ° C
Solvent: Tetrahydrofuran Flow rate: 1 ml / min
Detection: RI

硬化促進剤:トリフェニルホスフィン(北興化学工業製)
無機充填剤:溶融シリカ(商品名:MSR−2212、龍森製)
離型剤:カルナバワックス1号(セラリカ野田製)
カップリング剤:KBM−303(信越化学製)
Curing accelerator: Triphenylphosphine (manufactured by Hokuko Chemical)
Inorganic filler: fused silica (trade name: MSR-2212, manufactured by Tatsumori)
Mold release agent: Carnauba wax No. 1 (manufactured by Celerica Noda)
Coupling agent: KBM-303 (manufactured by Shin-Etsu Chemical)

表1から、本発明のエポキシ樹脂組成物は、ハロゲンやアンチモン化合物等の難燃剤を用いることなく、難燃性に優れた硬化物を与える。特に、式(2)のフェノール樹脂であって式(a)の化合物の含有割合が多いもの、すなわち分子量が低くて軟化点が低いものの方が、消炎時間が短く難燃性が良好である。 From Table 1, the epoxy resin composition of this invention gives the hardened | cured material excellent in the flame retardance, without using flame retardants, such as a halogen and an antimony compound. In particular, the phenol resin of the formula (2) having a higher content of the compound of the formula (a), that is, the one having a lower molecular weight and a lower softening point has a shorter flame extinguishing time and better flame retardancy.

Claims (4)

式(1)
Figure 2008308590
(式中、nは平均値であり1<n≦3を表す。)で表されるエポキシ樹脂、式(2)
Figure 2008308590
(式中、複数存在するRはそれぞれ独立して存在し、Rは水素原子または炭素数1〜4のアルキル基を表す。nは平均値であり1<n≦4を表す。)で表され、下記式(a)
Figure 2008308590
(式中、複数存在するRはそれぞれ独立して存在し、Rは水素原子または炭素数1〜4のアルキル基を表す。)
で表される成分の含有割合が10重量%以上であるフェノール樹脂、無機充填剤および必要により硬化促進剤を含有する半導体封止用エポキシ樹脂組成物。
Formula (1)
Figure 2008308590
(Wherein n is an average value and represents 1 <n ≦ 3), an epoxy resin represented by formula (2)
Figure 2008308590
(Wherein a plurality of R's are present independently, R represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms. N is an average value and 1 <n ≦ 4). The following formula (a)
Figure 2008308590
(In the formula, a plurality of R's are present independently, and R represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms.)
An epoxy resin composition for encapsulating a semiconductor containing a phenol resin having a content ratio of 10% by weight or more, an inorganic filler, and, if necessary, a curing accelerator.
無機充填剤の含有割合が75〜85重量%である請求項1記載の半導体封止用エポキシ樹脂組成物。 The epoxy resin composition for semiconductor encapsulation according to claim 1, wherein the content of the inorganic filler is 75 to 85% by weight. 請求項1または2記載の半導体封止用エポキシ樹脂組成物で半導体素子を封止した半導体装置。 A semiconductor device in which a semiconductor element is encapsulated with the epoxy resin composition for encapsulating a semiconductor according to claim 1. 半導体素子が銅系のリードフレームに搭載されている、請求項3記載の半導体装置。 The semiconductor device according to claim 3, wherein the semiconductor element is mounted on a copper-based lead frame.
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