JP7155502B2 - SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND ENCLOSURE RESIN COMPOSITION - Google Patents

Description

TECHNICAL FIELD The present invention relates to a semiconductor device, a method for manufacturing the same, and a resin composition for encapsulation.

A technology related to a sealing material used for sealing a semiconductor element is disclosed in Patent Document 1 (Japanese Unexamined Patent Application Publication No. 2000-63629). The same document describes a resin composition for encapsulating a semiconductor device manufactured by encapsulating semiconductor elements in a wafer state and then cutting them, wherein the resin composition comprises a filler, an epoxy resin, A semiconductor encapsulating resin composition comprising a curing agent and having a filler with a maximum particle size of 45 μm or less is disclosed. According to the document, by using such a resin composition for semiconductor encapsulation, it is possible to manufacture a highly reliable chip-sized semiconductor device at low cost.

In addition, Patent Document 2 (Japanese Patent Application Laid-Open No. 2016-44211) describes a technique related to a resin composition used for mold underfill, which is a sealing method for collectively performing underfill and molding on the upper part of a semiconductor chip. there is According to this document, a resin composition for mold underfill containing an epoxy resin, a phenol resin, a curing accelerator that is a compound having a specific structure, and a maleimide compound is said to have excellent filling properties and small curing shrinkage. ing.

JP-A-2000-63629 JP 2016-44211 A

However, as a result of examination by the present inventors, the encapsulating material described in Patent Document 1 or 2 is preferable for filling narrow portions while ensuring the heat resistance required for encapsulating materials for power semiconductor elements. It has become clear that there is still room for improvement in terms of obtaining quality.
Accordingly, the present invention provides a technique for sealing a semiconductor device that is excellent in heat resistance and narrow space filling characteristics.

According to the invention,
The following conditions (A) to (D):
(A) A semiconductor element with a power consumption of 2.0 W or more (B) A semiconductor element made of one or more semiconductors selected from the group consisting of SiC, GaN, Ga ₂ O ₃ and diamond (C) A voltage of 1.0 V or more (D) A semiconductor device obtained by sealing a power semiconductor element with a sealing resin composition, which satisfies any of the semiconductor elements having a power density of 10 W/cm ³ or more,
The encapsulating resin composition contains a curable resin and an inorganic filler,
Rmax (μm) is the particle size at which the cumulative frequency from the large particle size side of the volume-based particle size distribution of the particles contained in the inorganic filler is 5%,
When the maximum peak diameter of the volume-based particle size distribution of the particles contained in the inorganic filler is R (μm),
R<Rmax,
1 μm≦R≦24 μm,
R/Rmax≧0.45,
A cured product of the sealing resin composition has a glass transition temperature of 180° C. or higher and 270° C. or lower,
The weight loss when the cured product is exposed to 200 ° C. for 1000 hours is 0.12% or less ,
The melt viscosity of the sealing resin composition is 3 Pa s or more and 15 Pa s or less,
A semiconductor device is provided in which the sealing resin composition has a spiral flow flow length of 100 cm or more .

According to the invention,
The following conditions (A) to (D):
(A) A semiconductor element with a power consumption of 2.0 W or more (B) A semiconductor element made of one or more semiconductors selected from the group consisting of SiC, GaN, Ga ₂ O ₃ and diamond (C) A voltage of 1.0 V or more (D) a semiconductor element having a power density of 10 W/cm ³ or more, and a resin composition for sealing a power semiconductor element,
The encapsulating resin composition contains a curable resin and an inorganic filler,
Rmax (μm) is the particle size at which the cumulative frequency from the large particle size side of the volume-based particle size distribution of the particles contained in the inorganic filler is 5%,
When the maximum peak diameter of the volume-based particle size distribution of the particles contained in the inorganic filler is R (μm),
R<Rmax,
1 μm≦R≦24 μm,
R/Rmax≧0.45,
A cured product of the encapsulating resin composition has a glass transition temperature of 180° C. or higher and 270° C. or lower,
The weight loss when the cured product is exposed to 200 ° C. for 1000 hours is 0.12% or less ,
The encapsulating resin composition has a melt viscosity of 3 Pa s or more and 15 Pa s or less,
A sealing resin composition having a spiral flow length of 100 cm or more is provided.

Moreover, according to the present invention,
The following conditions (A) to (D):
(A) A semiconductor element with a power consumption of 2.0 W or more (B) A semiconductor element made of one or more semiconductors selected from the group consisting of SiC, GaN, Ga ₂ O ₃ and diamond (C) A voltage of 1.0 V or more (D) a semiconductor device having a power density of 10 W/cm ³ or more, and sealing a power semiconductor device with the resin composition for sealing according to the present invention. A method is provided.

According to the present invention, a semiconductor device encapsulation technique that is excellent in heat resistance and narrow space filling characteristics is realized.

1 is a cross-sectional view showing the configuration of a semiconductor device according to an embodiment; FIG. 1 is a cross-sectional view showing the configuration of a semiconductor device according to an embodiment; FIG. 1 is a cross-sectional view showing the configuration of a semiconductor device according to an embodiment; FIG.

Embodiments will be described below with reference to the drawings. In addition, in all the drawings, the same constituent elements are denoted by the same reference numerals, and the description thereof will be omitted as appropriate.

(semiconductor device)
In the present embodiment, the semiconductor device is a semiconductor device obtained by sealing a power semiconductor element with a sealing resin composition, satisfying any of the following conditions (A) to (D).
(A) A semiconductor element with a power consumption of 2.0 W or more (B) A semiconductor element made of one or more semiconductors selected from the group consisting of SiC, GaN, Ga ₂ O ₃ and diamond (C) A voltage of 1.0 V or more (D) a semiconductor device having a power density of 10 W/cm ³ or more; When the particle size at which the cumulative frequency from the large particle size side is 5% is Rmax (μm), and the maximum peak diameter of the volume-based particle size distribution of the particles contained in the inorganic filler is R (μm) , R<Rmax, 1 μm≦R≦24 μm, and R/Rmax≧0.45. Further, the cured product of the encapsulating resin composition has a glass transition temperature of 180° C. or more and 270° C. or less, and a weight loss of 0.12% or less when the cured product is exposed to 200° C. for 1000 hours.

1 to 3 are cross-sectional views showing the configuration of the semiconductor device according to this embodiment. In this embodiment, the configuration of the semiconductor device is not limited to those shown in FIGS. 1 to 3. FIG.
First, the semiconductor device 100 shown in FIG. 1 includes a semiconductor element 20 mounted on a substrate 30 and a sealing material 50 sealing the semiconductor element 20 .
The encapsulating material 50 is composed of a cured product obtained by curing the encapsulating resin composition of the present embodiment. A specific configuration of the encapsulating resin composition will be described later.

Further, FIG. 1 illustrates a case where the board 30 is a circuit board. In this case, as shown in FIG. 1, for example, a plurality of solder balls 60 are formed on the other surface of the substrate 30 opposite to the surface on which the semiconductor element 20 is mounted. Semiconductor element 20 is mounted on substrate 30 and electrically connected to substrate 30 via wires 40 . On the other hand, the semiconductor element 20 may be flip-chip mounted on the substrate 30 . Here, wire 40 is made of copper, for example.

Sealing material 50 seals semiconductor element 20 so as to cover, for example, the other surface of semiconductor element 20 opposite to the surface facing substrate 30 . In the example shown in FIG. 1, a sealing material 50 is formed so as to cover the other surface and the side surface of the semiconductor element 20 . The encapsulating material 50 can be formed, for example, by encapsulating the encapsulating resin composition using a known method such as transfer molding or compression molding.

FIG. 2 is a cross-sectional view showing the configuration of the semiconductor device 100 according to the present embodiment, showing an example different from that shown in FIG. The semiconductor device 100 shown in FIG. 2 uses a lead frame as the substrate 30 . In this case, semiconductor element 20 is mounted, for example, on die pad 32 of substrate 30 and electrically connected to outer leads 34 via wires 40 . Semiconductor element 20 is, for example, a power semiconductor element, similar to the example shown in FIG. The encapsulating material 50 is formed using the encapsulating resin composition of the present embodiment in the same manner as in the example shown in FIG.

FIG. 3 is a cross-sectional view showing the configuration of another semiconductor device according to this embodiment. A semiconductor device 110 shown in FIG. 3 is, for example, a semiconductor package, and includes a substrate 30, a semiconductor element 20, and a sealing material 50. As shown in FIG. Semiconductor element 20 is arranged on substrate 30 . FIG. 3 illustrates a case where the semiconductor element 20 is flip-chip mounted on the substrate 30 via the bumps 22 .
The sealing material 50 seals the semiconductor element 20 and fills the gap 24 between the substrate 30 and the semiconductor element 20 . The sealing material 50 is obtained by molding, for example, a compression molding mold underfill material using a compression molding method. In this case, it is possible to fill the gap 24 while encapsulating the semiconductor element 20 by using a compression molding mold underfill material having excellent filling properties, thereby realizing the semiconductor device 110 having excellent reliability. It becomes possible.

In the semiconductor device 110, preferably, the semiconductor element 20, which is a power semiconductor element, is provided on the substrate 30, and the sealing resin composition is filled in the gap between the substrate 30 and the semiconductor element 20. It will be.

In the semiconductor device shown in FIGS. 1 to 3, the semiconductor element 20 is a power semiconductor element that satisfies any one of the conditions (A) to (D) described above. The material of the semiconductor element 20 preferably satisfies the condition (B) described above, that is, one or more semiconductors selected from the group consisting of SiC, GaN, Ga ₂ O ₃ and diamond.
The power consumption of the semiconductor element 20 is, for example, 2.0 W or more, preferably 3.0 W or more, and may be, for example, 4.0 W or less of the condition (A) described above.
The voltage of semiconductor element 20 is, for example, 1.0 V or higher in condition (C) described above, preferably 3.0 V or higher, and may be, for example, 5.0 V or higher. Also, the voltage of semiconductor element 20 may be, for example, 100 V or less.
Moreover, the power density of the semiconductor element 20 is, for example, 10 W/cm ³ or more, preferably 20 W/cm ³ or more, and may be, for example, 30 W/cm ³ or more of the condition (D) described above. Also, the power density of the semiconductor element 20 may be, for example, 200 W/cm ³ or less.
Moreover, the semiconductor element 20 can operate in a high temperature environment of, for example, 200° C. or higher, preferably 250° C. or higher.

Moreover, the semiconductor element 20 is preferably a power semiconductor element provided on the substrate 30, and includes a rectifier diode, a power transistor, a power MOSFET, an insulated gate bipolar transistor (IGBT), a thyristor, a gate turn-off thyristor (GTO) and a triac. One or more electronic components selected from the group consisting of
At this time, the gap G (μm) between the substrate 30 and the semiconductor element 20 is preferably 3 μm or more, more preferably 5 μm or more, from the viewpoint of improving filling properties of the inorganic filler into the gap. From the viewpoint of thinning the entire semiconductor device, G is preferably 50 μm or less, more preferably 30 μm or less.

In addition, in the semiconductor device shown in FIGS. 1 to 3, the encapsulating material 50 is composed of a cured encapsulating resin composition.

The properties of the encapsulating resin composition of the present embodiment or the cured product thereof are further described below. Unless otherwise specified, the cured product used for property evaluation is obtained by curing the encapsulating resin composition at 175° C. for 120 seconds and then heat-treating it at 175° C. for 4 hours.

The glass transition temperature (Tg) of the cured product of the encapsulating resin composition is preferably 180°C or higher, more preferably 190°C or higher, and still more preferably 200°C or higher, from the viewpoint of improving the heat resistance of the cured product. , more preferably 203° C. or higher, and even more preferably 205° C. or higher.
The upper limit of the glass transition temperature of the cured product is not limited, but from the viewpoint of improving the toughness of the cured product, it is 270° C. or lower, more preferably 250° C. or lower, and still more preferably 230° C. or lower.
Here, the glass transition temperature of the cured product is measured using a thermal mechanical analysis (TMA) device (manufactured by Seiko Instruments Inc., TMA100) with a temperature range of 0 ° C. to 400 ° C. and a heating rate of 5 ° C./min. measured under the conditions of

The weight loss when the cured product is exposed to 200° C. for 1000 hours is 0.12% or less, preferably 0.10% or less, more preferably 0.10% or less, from the viewpoint of improving the heat resistance of the semiconductor device. 08% or less.
Although the lower limit of the weight loss is 0% or more, it may be 0.01% or more, for example.

The filling length of the sealing resin composition measured under the following conditions is preferably 10 mm or more, more preferably 20 mm or more, and even more preferably, from the viewpoint of improving gap-filling properties of the sealing resin composition. is 30 mm or more.
The filling length is preferably 100 mm or less, more preferably 80 mm or less, from the viewpoint of suppressing burrs generated in the air vent portion and improving the moldability or productivity of the semiconductor device.
(Measurement condition)
Mold temperature: 175 ° C., injection speed: 10.5 mm / s, injection pressure: 3.5 MPa, curing time: 120 seconds, tablet size: 40 mmΦ-40 g, the width formed in the mold is 5 mm, The sealing resin composition is injected into a rectangular channel with a slit gap of 25 μm, and the filling length from the upstream end of the channel is measured.

Here, the gap-filling property of the sealing resin composition is not simply determined by the average particle diameter _d50 and the maximum peak diameter R of the inorganic filler. , Rmax, or R/Rmax are also important factors. Each of these factors will be described later.

The melt viscosity (high-flow viscosity) of the encapsulating resin composition is preferably 25 Pa·s or less, more preferably 20 Pa·s or less, still more preferably 15 Pa·s, from the viewpoint of obtaining good filling properties. It is below. Also, the lower limit of the melt viscosity is not limited, but can be, for example, 3 Pa·s or more.
Here, the melt viscosity (high-flow viscosity) of the encapsulating resin composition is the apparent viscosity η of the resin composition measured under the following conditions.
Using a flow tester CFT-500C manufactured by Shimadzu Corporation, the resin composition melted under the test conditions of temperature 175° C., load 40 kgf (piston area 1 cm ² ), die hole diameter 0.50 mm, and die length 1.00 mm. Measure the apparent viscosity η. This apparent viscosity η is calculated from the following formula. In addition, Q is the flow rate of the resin composition flowing per unit time. In addition, the smaller the value of the Koka flow viscosity, the lower the viscosity.

η=(4πDP/128LQ)×10 ⁻³ (Pa·sec)
η: apparent viscosity D: die hole diameter (mm)
P: test pressure (Pa)
L: Die length (mm)
Q: flow rate (cm ³ /sec)

In the present embodiment, the spiral flow flow length of the encapsulating resin composition is preferably 40 cm or more, more preferably 40 cm or more, from the viewpoint of more effectively improving the filling property when molding the encapsulating resin composition. is 50 cm or more, more preferably 60 cm or more. Also, the upper limit of the spiral flow flow length is not limited, but can be, for example, 200 cm or less.

Next, the encapsulating resin composition used for the encapsulating material 50 will be described.
(Resin composition for encapsulation)
In this embodiment, the encapsulating resin composition contains a curable resin and an inorganic filler.

(Curable resin)
The curable resin is specifically a thermosetting resin.
The thermosetting resin is preferably a compound having two or more maleimide groups, a compound having two or more benzoxazine rings, an epoxy resin, or a phenol resin, from the viewpoint of improving the heat resistance of the cured product of the encapsulating resin composition. , urea resins, resins having a triazine ring such as melamine resins, unsaturated polyester resins, polyurethane resins, diallyl phthalate resins, silicone resins, cyanate resins, polyimide resins, polyamideimide resins, and benzocyclobutene resins Contains one or more selected from

From the same point of view, the curable resin preferably contains an epoxy resin and a phenolic resin curing agent, more preferably a phenolic resin curing agent represented by the following general formula (1A) and a phenolic resin curing agent represented by the following general formula (2A). and more preferably a phenolic resin curing agent represented by the following general formula (1A) and an epoxy resin represented by the following general formula (2A): including.

(In the above general formula (1A), two Y each independently represent a hydroxyphenyl group represented by the following general formula (1B) or the following general formula (1C), and X is the following general formula (1D ) or a hydroxyphenylene group represented by the following general formula (1E), n represents a number of 0 or more, and when n is 2 or more, two or more X are each independently the same Each R ¹ independently represents a hydrocarbon group having 1 to 5 carbon atoms, and a represents an integer of 0 to 4. Further, the above general formula (1A) is represented by the following general It has at least one of a divalent hydroxyphenyl group represented by formula (1C) and a divalent hydroxyphenylene group represented by the following general formula (1E).)

(In general formulas (1B) to (1E) above, R ² and R ³ each independently represent a hydrocarbon group having 1 to 5 carbon atoms, b is an integer of 0 to 4, c is 0 to 3 , d is an integer of 0 to 3, and e is an integer of 0 to 2.)

(In the above general formula (2A), two Y each independently represent a glycidylated phenyl group represented by the following general formula (2B) or the following general formula (2C), and X represents the following general formula ( 2D) or a glycidylated phenylene group represented by the following general formula (2E), n represents a number of 0 or more, and when n is 2 or more, two or more X are each independently the same Each R ¹ independently represents a hydrocarbon group having 1 to 5 carbon atoms, and a represents an integer of 0 to 4. Further, the above general formula (2A) is: At least one of a glycidyl phenyl group having two glycidyl ether groups represented by the following general formula (2C) and a glycidyl phenylene group having two glycidyl ether groups represented by the following general formula (2E) have.)

(In general formulas (2B) to (2E) above, R ² and R ³ each independently represent a hydrocarbon group having 1 to 5 carbon atoms, b is an integer of 0 to 4, c is 0 to 3 , d is an integer of 0 to 3, and e is an integer of 0 to 2.)

The phenolic resin curing agent represented by the general formula (1A) and the epoxy resin represented by the general formula (2A) will be described in more detail below.
First, the phenolic resin curing agent represented by general formula (1A) will be described.
In the phenol resin curing agent represented by the general formula (1A), n is an average value, represents a number of 0 or more, and is preferably 6 or less, more preferably 3 or less, and still more preferably 1 or less. is. Further, the number average molecular weight of the phenolic resin curing agent represented by the general formula (1A) is preferably 390 or more, more preferably 400 or more, and preferably 1000 or less, more preferably 600 or less. More preferably 550 or less, and even more preferably 500 or less. Such a phenolic resin curing agent has an aromatic ring substituted with multiple hydroxyl groups, so the interaction between molecules derived from hydrogen bonding is strong, and moldability, especially during continuous molding, is higher than that of conventional resins. In terms of fillability, it may exhibit unique behavior that is different from the conventional concepts of fluidity and curability. By using a phenolic resin curing agent having a number average molecular weight within the above range, a resin composition having excellent curability and good continuous moldability can be obtained, and the cured product has a high glass transition temperature and a low weight. have a decreasing rate.
The value of n can be calculated from the number average molecular weight, the above X and Y, and the structure of the biphenyl skeleton and its composition ratio. Also, when n is 2 or more, two or more Xs may be independently the same or different.

Each R ¹ in general formula (1A) independently represents a hydrocarbon group having 1 to 5 carbon atoms. R ² and R ³ in general formulas (1B) to (1E) each independently represent a hydrocarbon group having 1 to 5 carbon atoms. If the number of carbon atoms in R ¹ , R ² and R ³ is 5 or less, it is possible to more reliably prevent the reactivity of the resulting resin composition from being lowered and the moldability to be impaired. .

Examples of substituents R ¹ , R ² and R ³ include methyl, ethyl, propyl, n-butyl, isobutyl, t-butyl, n-pentyl, 2-methylbutyl and 3-methylbutyl. and alkyl groups such as a t-pentyl group, and among these, a methyl group is preferred. Thereby, the resin composition can have a particularly excellent balance between curability and hydrophobicity.

Further, a represents the number of substituents R ¹ bonded on the same benzene ring in general formula (1A), and a is an integer of 0 to 4 independently of each other. b and d represent the number of substituents R ² bonded on the same benzene ring in general formulas (1B) and (1D), respectively, and b are each independently an integer of 0 to 4; , d are independently of each other integers from 0 to 3. Furthermore, c and e represent the number of substituents R ³ bonded to the same benzene ring in general formulas (1C) and (1E), respectively, and c is an integer of 0 to 3 independently of each other. and e are independently integers from 0 to 2. Also, a is preferably an integer of 0 to 2, and b, c, d and e are preferably 0 or 1.

The phenolic resin curing agent represented by the general formula (1A) includes a monovalent hydroxyphenyl group represented by the general formula (1B) (hereinafter, the monovalent hydroxyphenyl group means a hydroxyphenyl group having one hydroxyl group. ), and a monovalent hydroxyphenylene group represented by the general formula (1D) (hereinafter, the monovalent hydroxyphenylene group is defined as a hydroxyphenylene group having one hydroxyl group). It may contain one or two groups selected from the group. Further, the phenolic resin curing agent represented by the general formula (1A) includes a divalent hydroxyphenyl group represented by the general formula (1C) (hereinafter, the divalent hydroxyphenyl group is a hydroxyphenyl group having two hydroxyl groups. ), and a divalent hydroxyphenylene group represented by the general formula (1E) (hereinafter, the divalent hydroxyphenylene group refers to a hydroxyphenylene group having two hydroxyl groups.) It may contain one or two groups selected from the group consisting of
Here, the phenolic resin curing agent represented by the general formula (1A) includes a divalent hydroxyphenyl group represented by the general formula (1C) and a divalent hydroxyphenylene group represented by the general formula (1E). and preferably both. By adopting such a structure, it is possible to improve the hydroxyl group density.
A phenol resin curing agent containing a divalent hydroxyphenyl group represented by the general formula (1C) and a divalent hydroxyphenylene group represented by the general formula (1E) has a high density of phenolic hydroxyl groups. A cured product of the resin composition obtained has a high glass transition temperature (Tg). In general, a polymer having a phenolic hydroxyl group, such as the phenolic resin curing agent represented by the general formula (1A), has a higher weight loss rate as the density of the phenolic hydroxyl group increases. However, the crosslinked product of the phenolic resin curing agent represented by the general formula (1A) and the epoxy resin is inhibited from increasing the rate of weight loss as the Tg increases. Although the reason for this is not entirely clear, it is believed that the methylene group portion connecting the biphenyl skeleton of the crosslinked product and the divalent phenol is protected by its steric bulkiness and is relatively resistant to thermal decomposition.

Further, in the general formula (1A), by using a phenol resin curing agent containing a monovalent hydroxyphenyl group represented by the general formula (1B) and a monovalent hydroxyphenylene group represented by the general formula (1D) , the resulting resin composition has excellent flame retardancy, low water absorption, and solder resistance.
In the phenolic resin curing agent represented by the general formula (1A), let k be the total number of hydroxyphenyl groups represented by the general formula (1B) and the number of hydroxyphenylene groups represented by the general formula (1D), The average value of k is k0, the total number of hydroxyphenyl groups represented by the general formula (1C) and the number of hydroxyphenylene groups represented by the general formula (1E) is m, and the average value of m is m0. In this case, the value of k0/m0 is preferably 0/100 to 82/18, more preferably 20/80 to 80/20, even more preferably 25/75 to 75/25. . When the value of k0/m0 is within the above range, it is possible to economically obtain a resin composition having an excellent balance of fluidity, solder resistance, flame retardancy, continuous moldability and heat resistance.

Note that the values of k0 and m0 can be obtained by performing arithmetic calculations regarding relative intensity ratios measured by Field Desorption Mass Spectrometry (FD-MS) as mass ratios. Alternatively, it can be determined by H-NMR or C-NMR measurement.

The phenolic resin curing agent represented by general formula (1A) can be produced, for example, using the method described in International Publication No. 2013/136769.

Next, the epoxy resin represented by general formula (2A) will be described.
In the epoxy resin represented by the general formula (2A), n is an average value and represents a number of 0 or more, preferably 6 or less, more preferably 3 or less, still more preferably 1 or less. The epoxy resin represented by formula (2A) preferably has a number average molecular weight of 450 to 2,000, more preferably 500 to 1,000, even more preferably 500 to 800, even more preferably 500 to 700. In the curing process, such epoxy resins are strongly affected by the interaction of hydrogen bonds derived from the phenolic resin curing agent containing aromatic rings with multiple hydroxyl groups, and compared to conventional resins, moldability, especially In addition, in the filling property during continuous molding, it may show a unique behavior that is different from the conventional concepts of fluidity and hardening. By using an epoxy resin having a number average molecular weight within the above range, a resin composition having excellent curability and good continuous moldability can be obtained, and the cured product has a high glass transition temperature and a low weight loss rate. have
Note that n can be calculated from the number average molecular weight, the above X and Y, and the structure of the biphenyl skeleton and its composition ratio. Also, when n is 2 or more, two or more Xs may be independently the same or different.

Each R ¹ in general formula (2A) independently represents a hydrocarbon group having 1 to 5 carbon atoms. R ² and R ³ in general formulas (2B) to (2E) each independently represent a hydrocarbon group having 1 to 5 carbon atoms. If the number of carbon atoms in R ¹ , R ² and R ³ is 5 or less, it is possible to reliably prevent the reactivity of the resulting resin composition from being lowered and the moldability to be impaired.

Specific examples of substituents R ¹ , R ² and R ³ include methyl group, ethyl group, propyl group, n-butyl group, isobutyl group, t-butyl group, n-pentyl group, 2-methylbutyl group, Examples thereof include alkyl groups such as 3-methylbutyl group and t-pentyl group, and among these, methyl group is preferred. Thereby, the curability and hydrophobicity of the resin composition can be particularly well balanced.

a in the general formula (2A) represents the number of substituents R ¹ bonded on the same benzene ring, and a is an integer of 0 to 4 independently of each other. b and d in general formula (2B) and general formula (2D) represent the number of substituents R ² bonded to the same benzene ring, b are each independently an integer of 0 to 4, d is independently an integer from 0 to 3; c and e in general formula (2C) and general formula (2E) represent the number of substituents R ³ bonded to the same benzene ring, c is independent of each other and is 0 to 3, e is Independently of each other, they are integers from 0 to 2. Also, a is preferably an integer of 0 to 2, and b, c, d and e are preferably 0 or 1.

The epoxy resin represented by the general formula (2A) includes a glycidyl phenyl group having one glycidyl ether group represented by the general formula (2B) and one glycidyl ether group represented by the general formula (2D). may contain one or two groups selected from the group consisting of glycidylated phenylene groups having Further, the epoxy resin represented by the general formula (2A) includes a glycidyl phenyl group having two glycidyl ether groups represented by the general formula (2C) and two glycidyl groups represented by the general formula (2E). It may contain one or two groups selected from the group consisting of glycidylated phenylene groups with ether groups.
Here, the epoxy resin represented by the general formula (2A) comprises a glycidyl phenyl group having two glycidyl ether groups represented by the general formula (2C) and two glycidyl groups represented by the general formula (2E). It has at least one, and preferably both, glycidylated phenylene groups with ether groups. With such a configuration, the epoxy group density can be improved.
An epoxy resin containing a glycidyl phenyl group having two glycidyl ether groups represented by general formula (2C) and a glycidyl phenylene group having two glycidyl ether groups represented by general formula (2E) is glycidyl Due to the high density of ether groups, the resulting cured product of the resin composition has a high glass transition temperature (Tg). Generally, in the epoxy resin represented by the general formula (2A), the higher the density of the glycidyl ether groups, the higher the weight loss rate. However, in the crosslinked product of the epoxy resin represented by the general formula (2A) and the phenolic resin curing agent, an increase in weight loss rate associated with an increase in Tg is suppressed. The reason for this is not necessarily clear, but it is believed that the methylene group portion that connects the biphenyl skeleton of the crosslinked product and the monovalent or divalent phenol is protected by its steric bulkiness and is relatively resistant to thermal decomposition. .

Further, in the epoxy resin represented by the general formula (2A), a glycidyl phenyl group having one glycidyl ether group represented by the general formula (2B) and one glycidyl ether represented by the general formula (2D) By using an epoxy resin containing a glycidylated phenylene group having a group, the resulting resin composition has excellent flame retardancy, low water absorption, and solder resistance.

The epoxy resin represented by general formula (2A) can be produced, for example, using the method described in International Publication No. 2013/136769.

Further, in the present embodiment, the curable resin more preferably contains a phenol resin curing agent represented by general formula (1A) and an epoxy resin represented by general formula (2A). By doing so, the density of both functional groups is improved, so that the cross-linking density of the cured product formed by cross-linking the epoxy resins via the phenolic resin curing agent is further increased. As a result, the glass transition temperature (Tg) of the cured product is further improved. Moreover, it is possible to achieve both an improvement in the Tg of the cured product of the resin composition and a reduction in the weight loss rate of the cured product. As a result, the cured product obtained by curing the resin composition has excellent adhesion, electrical stability, flame retardancy, moldability, especially continuous moldability and heat resistance. It is possible to achieve both Tg and reduction in weight loss.

When the curable resin contains the phenolic resin curing agent represented by the general formula (1A) and the epoxy resin represented by the general formula (2A), the resin of the phenolic resin curing agent represented by the general formula (1A) When A1 (mass%) is the content in the composition and A2 (mass%) is the content of the epoxy resin represented by the general formula (2A) in the resin composition, (A1/(A1+A2) ) is preferably 0.2 or more and 0.9 or less, more preferably 0.3 or more and 0.7 or less. By adopting the above range, the number of cross-linking points formed by glycidyl ether groups and hydroxyl groups is adjusted within an appropriate range, and the Tg of the cured product can be more reliably improved.

Moreover, in the present embodiment, as the epoxy resin, a material other than the epoxy resin represented by the general formula (2A) may be used. Other epoxy resins include, for example, biphenylaralkyl type epoxy resin; triphenylmethane type epoxy resin; biphenyl type epoxy resin; bisphenol type epoxy resin such as bisphenol A type epoxy resin, bisphenol F type epoxy resin and tetramethylbisphenol F type epoxy resin. Resin; stilbene type epoxy resin; novolak type epoxy resin such as phenol novolak type epoxy resin and cresol novolak type epoxy resin; biphenyl novolak type epoxy resin; phenol aralkyl type epoxy resin having a phenylene skeleton, phenol aralkyl type epoxy resin having a biphenylene skeleton Aralkyl-type epoxy resins such as; dihydroxynaphthalene-type epoxy resins, naphthol-type epoxy resins such as epoxy resins obtained by glycidyl-etherifying a dimer of dihydroxynaphthalene; triazine nuclei such as triglycidyl isocyanurate and monoallyl diglycidyl isocyanurate Epoxy resin contained: One or more selected from bridged cyclic hydrocarbon compound-modified phenolic epoxy resins such as dicyclopentadiene-modified phenolic epoxy resin can be included. From the viewpoint of the balance between excellent curability and high glass transition temperature, it is preferable to use a phenol novolak type epoxy resin or a triphenylmethane type epoxy resin.
The encapsulating resin composition preferably contains 50% by mass or more of the epoxy resin represented by general formula (2A) in the total epoxy resin.

In the encapsulating resin composition of the present embodiment, when an epoxy resin is used, a curing agent that reacts with the epoxy resin may be used in combination. Thereby, the curability of the encapsulating resin composition can be further improved. Specific examples of the curing agent are selected from the group consisting of other phenolic resin curing agents, amine curing agents, and acid anhydride curing agents in addition to the phenolic resin curing agent represented by the general formula (1A) described above. 1 type or 2 types or more are mentioned. From the viewpoint of improving the curability of the encapsulating resin composition, the curing agent preferably contains at least one of a phenol resin curing agent and an amine curing agent, and more preferably contains at least a phenol resin curing agent. include.

Specific examples of phenolic resin-based curing agents include novolak-type phenolic resins such as phenol novolac resin, cresol novolak resin, and bisphenol novolac; polyvinylphenol; polyfunctional phenol resins such as trismethanephenol-type resin; Modified phenol resins such as pentadiene-modified phenol resins; phenol aralkyl resins having a phenylene skeleton and/or biphenylene skeleton; aralkyl resins such as naphthol aralkyl resins having a phenylene and/or biphenylene skeleton; bisphenol compounds such as bisphenol A and bisphenol F; One or two or more selected from the group consisting of resol-type phenol resins and the like can be mentioned.

Specific examples of amine curing agents include aliphatic polyamines such as diethylenetriamine (DETA), triethylenetetramine (TETA), metaxylylenediamine (MXDA); diaminodiphenylmethane (DDM), m-phenylenediamine (MPDA), diamino Aromatic polyamines such as diphenylsulfone (DDS); tertiary amine compounds such as benzyldimethylamine (BDMA) and 2,4,6-trisdimethylaminomethylphenol (DMP-30); dicyandiamide (DICY), organic acid dihydrazide, etc. 1 or 2 or more selected from the group consisting of other amine compounds containing.

Specific examples of acid anhydride curing agents include alicyclic acid anhydrides such as hexahydrophthalic anhydride (HHPA) and methyltetrahydrophthalic anhydride (MTHPA); trimellitic anhydride (TMA) and pyromellitic anhydride (PMDA). ) and aromatic acid anhydrides such as benzophenonetetracarboxylic acid (BTDA).

In this specification, since these curing agents also crosslink with epoxy resins to form networks, the curing agents themselves are also treated as part of the "thermosetting resin".

The content of the thermosetting resin in the encapsulating resin composition improves the fluidity of the encapsulating resin composition, and from the viewpoint of enabling the formation of a more stable encapsulating material, the encapsulating resin It is preferably 7% by mass or more, more preferably 12% by mass or more, and still more preferably 16% by mass or more, relative to the entire composition. Further, from the viewpoint of improving the moisture resistance reliability and reflow resistance of the semiconductor device, the content of the thermosetting resin in the encapsulating resin composition is preferably 40% by mass with respect to the entire encapsulating resin composition. or less, more preferably 35% by mass or less, and still more preferably 30% by mass or less.
When the thermosetting resin contains an epoxy resin, the content of the thermosetting resin can be defined as a value obtained by adding up the curing agent corresponding to the epoxy resin.

Further, in the present embodiment, when the encapsulating resin composition contains a solvent, the content relative to the entire encapsulating resin composition refers to the total solid content of the encapsulating resin composition excluding the solvent. Indicates content. The solid content of the encapsulating resin composition refers to the non-volatile content in the encapsulating resin composition, and refers to the remainder after excluding volatile components such as water and solvent.

(Inorganic filler)

Specific examples of inorganic fillers include one or more selected from the group consisting of titanium oxide, zirconium oxide, silica, calcium carbonate, boron carbide, clay, mica, talc, wollastonite, glass beads, milled carbon, graphite, and the like. Two or more types are mentioned.
The inorganic filler preferably contains silica, more preferably fused spherical silica or fused It contains one or more selected from the group consisting of crushed silica and crystalline silica, more preferably fused spherical silica.

The silica preferably has a SiO ₂ content of 99.8% by mass or more, for example. By using such high-purity silica, it becomes easy to realize a sealing material having good heat resistance and mechanical properties while reducing the amount of ionic impurities such as metal impurities. From the viewpoint of more effectively improving the high-temperature long-term storage characteristics of the encapsulant, the content of SiO ₂ in silica is preferably 99.9% by mass or more.

The particle diameter at which the cumulative frequency from the large particle size side of the volume-based particle size distribution of the particles contained in the inorganic filler is 5% is Rmax (μm), and the volume-based particle size distribution of the particles contained in the inorganic filler is defined as Rmax (μm). When the maximum peak diameter is R (μm), R<Rmax, 1 μm≦R≦24 μm, and R/Rmax≧0.45.

Here, Rmax (μm) means so-called _d95 , which is the particle size at the point where the cumulative particle size is 95% by mass from the smaller particle size in the volume-based particle size distribution.
Further, when the particles constituting the inorganic filler are sieved, the mesh ON (remaining amount on the sieve) becomes 1% or less with a sieve with an opening corresponding to the maximum particle size Rmax.

R (μm) is the particle diameter at the position of the maximum peak in the volume-based particle size distribution of the particles contained in the inorganic filler. In the present embodiment, R is the diameter of the first peak from the large particle size side in the volume-based particle size distribution of all the particles contained in the inorganic filler. From the viewpoint of improving the fluidity of the resin composition, R is 1 μm or more. Moreover, from the viewpoint of reliably filling the encapsulating resin composition into minute gaps, R is 24 μm or less.
The particles contained in the inorganic filler satisfy the relationships of R<Rmax, 1 μm≦R≦24 μm, and R/Rmax≧0.45. By satisfying these relationships, the encapsulating resin composition has excellent fluidity and filling properties. By encapsulating a power semiconductor element with such an encapsulating resin composition, it is possible to obtain a semiconductor device that is excellent in heat resistance and filling characteristics in a narrow space.
In addition, when the particles contained in the inorganic filler are only the first particles, the Rmax of the inorganic filler and the maximum particle size of the first particles are the same, and the R of the inorganic filler and the ratio of the first particles Matches the mode diameter. Here, the "mode diameter" refers to the particle diameter with the highest appearance ratio (volume basis) among the first particles.

Rmax should be larger than R and R/Rmax≧0.45 when the relationship is 1 μm≦R≦24 μm. Among them, Rmax is preferably 3 μm or more, more preferably 5 μm or more, still more preferably 10 μm or more, and is preferably 48 μm or less, more preferably 32 μm or less, still more preferably 25 μm or less, and even more preferably 25 μm or less. It is preferably 20 μm or less. By satisfying such a range, the inorganic filler can be reliably filled in a minute gap, for example, a gap of about 30 μm or less between the substrate 30 and the semiconductor element 20, which will be described later.

Further, by setting R to 1 μm or more and 24 μm or less, a high proportion of the particles contained in the inorganic filler can be particles having a particle size of about 1 to 24 μm. As a result, it is possible to improve the filling characteristics and fluidity of the resin composition for sealing into a narrow portion.
From the viewpoint of improving the filling characteristics and fluidity of the resin composition for sealing into a narrow space, R is preferably 3 µm or more, more preferably 4.5 µm or more, still more preferably 5 µm or more, and still more preferably It is 8 μm or more, preferably 20 μm or less, more preferably 17 μm or less, and still more preferably 15 μm or less.

In the volume-based particle size distribution of the entire particles contained in the inorganic filler, the frequency of particles having a particle size of R (μm) is preferably 3.5% or more and 15% or less, and 4% or more and 10% or less. more preferably 4.5% or more and 9% or less. Furthermore, it is 5% or more, more preferably 6% or more. This makes it possible to increase the proportion of particles having a particle size of R or close to R. Therefore, a highly fluid resin composition can be obtained.

In addition, R/Rmax is 0.45 or more, preferably 0.55 or more, from the viewpoint of improving the fluidity of the resin composition by making most of the particles have a particle size relatively close to Rmax. is.
Although the upper limit of R/Rmax is not limited, it is preferably 0.9 or less, more preferably 0.8 or less. If R/Rmax is too close to 1, the frequency of particles larger than R is reduced, and accordingly, the frequency of particles having a diameter close to R or the mode diameter R may be reduced.

A semiconductor element 20, which is a power semiconductor element, is provided on a substrate 30. When the gap between the substrate 30 and the semiconductor element 20 is G (μm), the ratio of R to G (R/G) is From the viewpoint of suppressing burrs generated in the air vent portion and suppressing a decrease in moldability or productivity, it is preferably 0.05 or more, more preferably 0.1 or more, and still more preferably 0.14 or more.
In addition, from the viewpoint of improving the filling property of the inorganic filler into the gap, the ratio (R/G) is preferably 0.7 or less, more preferably 0.5 or less, and still more preferably 0.3 or less. is.

Here, G is preferably 3 μm or more, more preferably 5 μm or more, from the viewpoint of improving the filling property of the inorganic filler into the gap.
From the viewpoint of thinning the semiconductor device as a whole, G is preferably 50 μm or less, more preferably 35 μm or less.

_In the present embodiment, the average particle diameter d50 of the inorganic filler is preferably 1 μm or more, more preferably 3 μm or more, from the viewpoint of improving the filling characteristics of the encapsulating resin composition. It is 20 μm or less, more preferably 15 μm or less, still more preferably 10 μm or less.

Further, in the present embodiment, the sieve mesh, that is, the coarse powder cut size of the inorganic filler is preferably 10 μm or more, more preferably 15 μm or more, from the viewpoint of improving the filling characteristics of the sealing resin composition, Also, it is preferably 50 μm or less, more preferably 40 μm or less, and still more preferably 30 μm or less.

In the present embodiment, the content of the inorganic filler in the encapsulating resin composition is preferably 65% with respect to the entire encapsulating resin composition, from the viewpoint of effectively improving the rigidity of the encapsulating material. % by mass or more, more preferably 70% by mass or more, and still more preferably 75% by mass.
Further, from the viewpoint of improving the heat resistance of the semiconductor device, the content of the inorganic filler in the encapsulating resin composition is preferably 90% by mass or less, for example, with respect to the entire encapsulating resin composition. More preferably, it is 85% by mass or less.

Moreover, in this embodiment, the sealing resin composition may contain components other than the thermosetting resin and the filler. For example, the encapsulating resin composition may contain curing accelerators, silane coupling agents, or other additives.

(Curing accelerator)
The curing accelerator is selected according to the type of the thermosetting resin, as long as it accelerates the curing of the thermosetting resin.
In the present embodiment, the curing accelerator is, for example, an organic phosphine, a tetra-substituted phosphonium compound, a phosphobetaine compound, an adduct of a phosphine compound and a quinone compound, a phosphorus atom-containing compound such as an adduct of a phosphonium compound and a silane compound; -methylimidazole, 2-ethyl-4-methylimidazole (EMI24), 2-phenyl-4-methylimidazole (2P4MZ), 2-phenylimidazole (2PZ), 2-phenyl-4-methyl-5-hydroxyimidazole (2P4MHZ) ), imidazole compounds such as 1-benzyl-2-phenylimidazole (1B2PZ); and one or more selected from the group consisting of nitrogen atom-containing compounds such as quaternary salts of amines. From the viewpoint of improving the curability of the sealing resin composition and the viewpoint of improving the adhesion between the sealing material and the metal, the curing accelerator is preferably selected from the group consisting of imidazole compounds and phosphorus atom-containing compounds. or contains two or more compounds.

From the viewpoint of effectively improving the curability of the resin composition, the content of the curing accelerator in the encapsulating resin composition is preferably 0.01% by mass or more relative to the entire encapsulating resin composition. Yes, more preferably 0.03% by mass or more, still more preferably 0.05% by mass or more.
Further, from the viewpoint of improving the handling of the encapsulating resin composition, the content of the curing accelerator in the encapsulating resin composition is preferably 5% by mass or less with respect to the entire encapsulating resin composition. , more preferably 3% by mass or less, and still more preferably 1% by mass or less.

(Silane coupling agent)
In the present embodiment, the encapsulating resin composition contains a silane coupling agent, so that the adhesion of the encapsulating resin composition can be further improved.
When the encapsulating resin composition contains an inorganic filler as a filler, the silane coupling agent can be added to the encapsulating resin by mixing the inorganic filler surface-treated with the silane coupling agent with other components. can be included in the composition. On the other hand, without subjecting the filler to the surface treatment described above, the silane coupling agent is added to the sealing resin composition together with the respective components into a mixer or the like and mixed to incorporate the silane coupling agent into the encapsulating resin composition. may

As the silane coupling agent, various silane compounds such as epoxysilane, mercaptosilane, aminosilane, alkylsilane, ureidosilane, vinylsilane, and methacrylsilane can be used.
Examples of these include vinyltrichlorosilane, vinyltrimethoxysilane, vinyltriethoxysilane, vinyltris(β-methoxyethoxy)silane, γ-methacryloxypropyltrimethoxysilane, β-(3,4-epoxycyclohexyl)ethyltrimethoxysilane. Silane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropyltriethoxysilane, γ-glycidoxypropylmethyldimethoxysilane, γ-methacryloxypropylmethyldiethoxysilane, γ-methacryloxypropyltriethoxysilane , vinyltriacetoxysilane, phenylaminopropyltrimethoxysilane, γ-aminopropyltriethoxysilane, γ-anilinopropyltrimethoxysilane, γ-anilinopropylmethyldimethoxysilane, γ-[bis(β-hydroxyethyl)] Aminopropyltriethoxysilane, N-β-(aminoethyl)-γ-aminopropyltrimethoxysilane, N-β-(aminoethyl)-γ-aminopropyltriethoxysilane, N-β-(aminoethyl)-γ -aminopropylmethyldimethoxysilane, N-phenyl-γ-aminopropyltrimethoxysilane, γ-(β-aminoethyl)aminopropyldimethoxymethylsilane, N-(trimethoxysilylpropyl)ethylenediamine, N-(dimethoxymethylsilylisopropyl) ) ethylenediamine, methyltrimethoxysilane, dimethyldimethoxysilane, methyltriethoxysilane, N-β-(N-vinylbenzylaminoethyl)-γ-aminopropyltrimethoxysilane, γ-chloropropyltrimethoxysilane, hexamethyldisilane, Silanes such as vinyltrimethoxysilane, 3-isocyanatopropyltriethoxysilane, 3-acryloxypropyltrimethoxysilane, hydrolyzate of 3-triethoxysilyl-N-(1,3-dimethylbutylidene)propylamine A coupling agent is mentioned.
These may be used individually by 1 type, and may be used in combination of 2 or more type.

In the present embodiment, the content of the silane coupling agent in the encapsulating resin composition is set to It is preferably 0.01% by mass or more, more preferably 0.03% by mass or more, and still more preferably 0.05% by mass or more.
In addition, from the viewpoint of improving the curability of the encapsulating resin composition, the content of the silane coupling agent is preferably 5% by mass or less, more preferably 3% by mass, relative to the entire encapsulating resin composition. % or less, more preferably 1 mass % or less.

(Additive)
The encapsulating resin composition of the present embodiment may further contain, if necessary, ion scavengers exemplified by inorganic ion exchangers such as hydrotalcites and polyvalent metal acid salts; natural waxes such as carnauba wax; Release agents such as synthetic waxes, zinc stearate, montan acid ester wax, higher fatty acids such as paraffin, metal salts thereof, and derivatives thereof; coloring agents such as carbon black and red iron oxide; aluminum hydroxide, magnesium hydroxide, boric acid Flame retardants such as zinc, zinc molybdate, and phosphazene; and various additives such as antioxidants may be appropriately blended. These compounding amounts are arbitrary. These may be used alone or in combination of two or more.

Next, the encapsulating resin composition and a method for manufacturing a semiconductor device using the same will be described.
The encapsulating resin composition of the present embodiment can be obtained, for example, by mixing each of the above-described components by known means, further melt-kneading with a kneader such as a roll, kneader, or extruder, cooling, and pulverizing. be able to. Further, a tablet-formed product obtained by pressing these can also be used as a resin composition for sealing. Thereby, a granular or tablet-like encapsulating resin composition can be obtained.
Such a tablet-molded composition facilitates encapsulation molding using known molding methods such as transfer molding, injection molding, and compression molding.

In addition, the method for manufacturing a semiconductor device according to the present embodiment includes, for example, the step of encapsulating the above-described conditions (A) to (D) semiconductor element with the encapsulating resin composition according to the present embodiment.

In the present embodiment, since the encapsulating material 50 is formed using the encapsulating resin composition of the present embodiment described above, the heat resistance is excellent and the filling characteristics of the encapsulating material 50 into a narrow portion are improved. It is excellent.

（上記一般式（１Ａ）中、２つのＹは、それぞれ独立して、下記一般式（１Ｂ）または下記一般式（１Ｃ）で表されるヒドロキシフェニル基を表し、Ｘは、下記一般式（１Ｄ）または下記一般式（１Ｅ）で表されるヒドロキシフェニレン基を表し、ｎは０以上の数を表し、ｎが２以上の場合、２つ以上のＸは、それぞれ独立して、同一であっても異なっていてもよく、Ｒ ¹ は、それぞれ独立して、炭素数１～５の炭化水素基を表し、ａは０～４の整数を表す。また、上記一般式（１Ａ）は、下記一般式（１Ｃ）で表される二価ヒドロキシフェニル基と、下記一般式（１Ｅ）で表される二価ヒドロキシフェニレン基のうちの少なくとも一方を有する。）

（上記一般式（１Ｂ）～（１Ｅ）中、Ｒ ² およびＲ ³ は、それぞれ独立して、炭素数１～５の炭化水素基を表し、ｂは０～４の整数、ｃは０～３の整数、ｄは０～３の整数、ｅは０～２の整数を表す。）

（上記一般式（２Ａ）中、２つのＹは、それぞれ独立して、下記一般式（２Ｂ）または下記一般式（２Ｃ）で表されるグリシジル化フェニル基を表し、Ｘは、下記一般式（２Ｄ）または下記一般式（２Ｅ）で表されるグリシジル化フェニレン基を表し、ｎは０以上の数を表し、ｎが２以上の場合、２つ以上のＸは、それぞれ独立して、同一であっても異なっていてもよく、Ｒ ¹ は、それぞれ独立して、炭素数１～５の炭化水素基を表し、ａは０～４の整数を表す。また、上記一般式（２Ａ）は、下記一般式（２Ｃ）で表される２つのグリシジルエーテル基を有するグリシジル化フェニル基と、下記一般式（２Ｅ）で表される２つのグリシジルエーテル基を有するグリシジル化フェニレン基のうちの少なくとも一方を有する。）

（上記一般式（２Ｂ）～（２Ｅ）中、Ｒ ² およびＲ ³ は、それぞれ独立して、炭素数１～５の炭化水素基を表し、ｂは０～４の整数、ｃは０～３の整数、ｄは０～３の整数、ｅは０～２の整数を表す。）
４． 前記パワー半導体素子が、基板上に設けられており、前記封止用樹脂組成物が前記基板と前記半導体素子との間の隙間に充填されてなる、１．乃至３．いずれか１つに記載の半導体装置。
５． 前記パワー半導体素子が、基板上に設けられており、前記基板と前記半導体素子との間の隙間をＧ（μｍ）とした場合、前記Ｇに対する前記Ｒの比（Ｒ／Ｇ）が、０．０５以上０．７以下である、１．乃至４．いずれか１つに記載の半導体装置。
６． 前記パワー半導体素子が、基板上に設けられており、整流ダイオード、パワートランジスタ、パワーＭＯＳＦＥＴ、絶縁ゲートバイポーラトランジスタ（ＩＧＢＴ）、サイリスタ、ゲートターンオフサイリスタ（ＧＴＯ）およびトライアックからなる群から選択される１または２以上の電子部品を含み、
前記基板と前記半導体素子との間の隙間Ｇ（μｍ）が０．１μｍ以上３５μｍ以下である、１．乃至５．いずれか１つに記載の半導体装置。
７． 前記封止用樹脂組成物の溶融粘度が３Ｐａ・ｓ以上２５Ｐａ・ｓ以下である、１．乃至６．いずれか１つに記載の半導体装置。
８． 以下の条件（Ａ）～（Ｄ）：
（Ａ）消費電力２．０Ｗ以上の半導体素子
（Ｂ）ＳｉＣ、ＧａＮ、Ｇａ ₂ Ｏ ₃ およびダイヤモンドからなる群から選択される１種以上の半導体からなる半導体素子
（Ｃ）電圧が１．０Ｖ以上の半導体素子
（Ｄ）パワー密度が１０Ｗ／ｃｍ ³ 以上の半導体素子
のいずれかを満たす、パワー半導体素子の封止用樹脂組成物であって、
当該封止用樹脂組成物が、硬化性樹脂および無機充填材を含み、
前記無機充填材に含まれる粒子の体積基準粒度分布の大粒径側からの累積頻度が５％となるところの粒径をＲmax（μｍ）とし、
前記無機充填材に含まれる粒子の体積基準粒度分布の最大のピークの径をＲ（μｍ）とした場合、
Ｒ＜Ｒmaxであり、
１μｍ≦Ｒ≦２４μｍであり、
Ｒ／Ｒmax≧０．４５であって、
当該封止用樹脂組成物の硬化物のガラス転移温度が１８０℃以上２７０℃以下であり、
前記硬化物を２００℃、１０００時間下にさらしたときの重量損失が０．１２％以下である、封止用樹脂組成物。
９． 以下の条件（Ａ）～（Ｄ）：
（Ａ）消費電力２．０Ｗ以上の半導体素子
（Ｂ）ＳｉＣ、ＧａＮ、Ｇａ ₂ Ｏ ₃ およびダイヤモンドからなる群から選択される１種以上の半導体からなる半導体素子
（Ｃ）電圧が１．０Ｖ以上の半導体素子
（Ｄ）パワー密度が１０Ｗ／ｃｍ ³ 以上の半導体素子
のいずれかを満たすパワー半導体素子を、８．に記載の封止用樹脂組成物で封止する工程を含む、半導体装置の製造方法。
It should be noted that the present invention is not limited to the above-described embodiments, and includes modifications, improvements, etc. within the scope of achieving the object of the present invention.
Examples of reference forms are added below.
1. The following conditions (A) to (D):
(A) Semiconductor device with power consumption of 2.0 W or more
( B ) a semiconductor element comprising at _least one semiconductor selected from the group consisting of SiC, GaN, Ga2O3 _and diamond;
(C) a semiconductor device with a voltage of 1.0 V or higher
(D) A semiconductor device with a power density of 10 W/cm ³ or more
A semiconductor device obtained by sealing a power semiconductor element with a sealing resin composition that satisfies any one of
The encapsulating resin composition contains a curable resin and an inorganic filler,
Rmax (μm) is the particle size at which the cumulative frequency from the large particle size side of the volume-based particle size distribution of the particles contained in the inorganic filler is 5%,
When the maximum peak diameter of the volume-based particle size distribution of the particles contained in the inorganic filler is R (μm),
R<Rmax,
1 μm≦R≦24 μm,
R/Rmax≧0.45,
A cured product of the sealing resin composition has a glass transition temperature of 180° C. or higher and 270° C. or lower,
A semiconductor device having a weight loss of 0.12% or less when the cured product is exposed to 200° C. for 1000 hours.
2. 1. The filling length of the sealing resin composition measured under the following conditions is 10 mm or more. The semiconductor device according to .
(Measurement condition)
Mold temperature: 175 ° C., injection speed: 10.5 mm / s, injection pressure: 3.5 MPa, curing time: 120 seconds, tablet size: 40 mmΦ-40 g, the width formed in the mold is 5 mm, The sealing resin composition is injected into a rectangular channel with a slit gap of 25 μm, and the filling length from the upstream end of the channel is measured.
3. 1. The curable resin contains a phenol resin curing agent represented by the following general formula (1A) and an epoxy resin represented by the following general formula (2A). or 2. The semiconductor device according to .

(In the above general formula (1A), two Y each independently represent a hydroxyphenyl group represented by the following general formula (1B) or the following general formula (1C), and X is the following general formula (1D ) or a hydroxyphenylene group represented by the following general formula (1E), n represents a number of 0 or more, and when n is 2 or more, two or more X are each independently the same Each R ¹ independently represents a hydrocarbon group having 1 to 5 carbon atoms, and a represents an integer of 0 to 4. Further, the above general formula (1A) is represented by the following general It has at least one of a divalent hydroxyphenyl group represented by formula (1C) and a divalent hydroxyphenylene group represented by the following general formula (1E).)

(In general formulas (1B) to (1E) above, R ² and R ³ each independently represent a hydrocarbon group having 1 to 5 carbon atoms, b is an integer of 0 to 4, c is 0 to 3 , d is an integer of 0 to 3, and e is an integer of 0 to 2.)

(In the above general formula (2A), two Y each independently represent a glycidylated phenyl group represented by the following general formula (2B) or the following general formula (2C), and X represents the following general formula ( 2D) or a glycidylated phenylene group represented by the following general formula (2E), n represents a number of 0 or more, and when n is 2 or more, two or more X are each independently the same Each R ¹ independently represents a hydrocarbon group having 1 to 5 carbon atoms, and a represents an integer of 0 to 4. Further, the above general formula (2A) is: At least one of a glycidyl phenyl group having two glycidyl ether groups represented by the following general formula (2C) and a glycidyl phenylene group having two glycidyl ether groups represented by the following general formula (2E) have.)

(In general formulas (2B) to (2E) above, R ² and R ³ each independently represent a hydrocarbon group having 1 to 5 carbon atoms, b is an integer of 0 to 4, c is 0 to 3 , d is an integer of 0 to 3, and e is an integer of 0 to 2.)
4. 1. The power semiconductor element is provided on a substrate, and the sealing resin composition is filled in a gap between the substrate and the semiconductor element. to 3. The semiconductor device according to any one of the above.
5. The power semiconductor element is provided on a substrate, and when the gap between the substrate and the semiconductor element is G (μm), the ratio of R to G (R/G) is 0.1. 05 or more and 0.7 or less; to 4. The semiconductor device according to any one of the above.
6. 1 or 1 selected from the group consisting of a rectifier diode, a power transistor, a power MOSFET, an insulated gate bipolar transistor (IGBT), a thyristor, a gate turn-off thyristor (GTO) and a triac, wherein the power semiconductor element is provided on a substrate; containing two or more electronic components,
1. A gap G (μm) between the substrate and the semiconductor element is 0.1 μm or more and 35 μm or less; to 5. The semiconductor device according to any one of the above.
7. 1. The encapsulating resin composition has a melt viscosity of 3 Pa·s or more and 25 Pa·s or less. to 6. The semiconductor device according to any one of the above.
8. The following conditions (A) to (D):
(A) Semiconductor device with power consumption of 2.0 W or more
( B ) a semiconductor element comprising one or more semiconductors selected from the group consisting of SiC, GaN, Ga2O3 _{and diamond} ;
(C) a semiconductor device with a voltage of 1.0 V or higher
(D) A semiconductor device with a power density of 10 W/cm ³ or more
A resin composition for encapsulating a power semiconductor element that satisfies any one of
The encapsulating resin composition contains a curable resin and an inorganic filler,
Rmax (μm) is the particle size at which the cumulative frequency from the large particle size side of the volume-based particle size distribution of the particles contained in the inorganic filler is 5%,
When the maximum peak diameter of the volume-based particle size distribution of the particles contained in the inorganic filler is R (μm),
R<Rmax,
1 μm≦R≦24 μm,
R/Rmax≧0.45,
A cured product of the encapsulating resin composition has a glass transition temperature of 180° C. or higher and 270° C. or lower,
The encapsulating resin composition having a weight loss of 0.12% or less when the cured product is exposed to 200° C. for 1000 hours.
9. The following conditions (A) to (D):
(A) Semiconductor device with power consumption of 2.0 W or more
( B ) a semiconductor element comprising one or more semiconductors selected from the group consisting of SiC, GaN, Ga2O3 _{and diamond} ;
(C) a semiconductor device with a voltage of 1.0 V or higher
(D) A semiconductor device with a power density of 10 W/cm ³ or more
8. A power semiconductor device that satisfies any one of 8. A method for manufacturing a semiconductor device, comprising the step of encapsulating with the encapsulating resin composition according to 1.

Next, examples of the present invention will be described.

(Production Example 1) Production of Phenolic Resin Curing Agent 1 A separable flask was equipped with a stirrer, a thermometer, a reflux condenser, and a nitrogen inlet, and 1,3-dihydroxybenzene (manufactured by Tokyo Chemical Industry Co., Ltd., "Resorcinol", Melting point 111 ° C., molecular weight 110, purity 99.4%) 291 parts by mass, phenol (special grade reagent manufactured by Kanto Chemical Co., Ltd., "phenol", melting point 41 ° C., molecular weight 94, purity 99.3%) 235 parts by mass, granulated in advance 125 parts by mass of crushed 4,4′-bischloromethylbiphenyl (manufactured by Wako Pure Chemical Industries, Ltd., “4,4′-bischloromethylbiphenyl”, melting point 126° C., purity 95%, molecular weight 251) was added to a separable flask. and heated while purging with nitrogen.
Thereafter, the system was reacted for 3 hours while maintaining the temperature within the system within the range of 110 to 130°C, then heated and reacted for 3 hours while maintaining the temperature within the range of 140 to 160°C.
Hydrochloric acid gas generated in the system by the above reaction was discharged out of the system by a nitrogen stream.

After completion of the reaction, unreacted components were distilled off under reduced pressure conditions of 150° C. and 2 mmHg. Next, 400 parts by mass of toluene is added and uniformly dissolved, then transferred to a separatory funnel, 150 parts by mass of distilled water is added and shaken, and then the aqueous layer is discarded (rinsing). After repeating this until the oil layer is reduced to 125 ° C., volatile components such as toluene and residual unreacted components are distilled off, and the phenol resin curing agent 1 (polymer ).
The hydroxyl equivalent of this phenolic resin curing agent 1 was 135.

In addition, the relative intensity ratio measured and analyzed by Field Desorption Mass Spectrometry (FD-MS) is regarded as a mass ratio, and is obtained by arithmetic calculation. Repeating structural units with one hydroxyl group The ratio (k0/m0) of the average value k0 of the number k and the average value m0 of the repeating number m of structural units having two hydroxyl groups is 0.98/1, and the number average molecular weight of the phenolic resin curing agent 1 is 460. Met.

Here, for the number average molecular weight, Waters Alliance (2695 Separations Module, 2414 Refractive Index Detector, TSK Gel GMHHR-Lx2 + TSK Guard Column HHR-Lx1, mobile phase: THF, 0.5 mL/min), The number average molecular weight was measured by gel permeation chromatography (GPC) under conditions of a column temperature of 40.0° C., a differential refractometer temperature of 40.0° C., and a sample injection amount of 100 μL.

(In the above general formula (12A), two Y each independently represent a hydroxyphenyl group represented by the following formula (12B) or the following formula (12C), and X is the following formula (12D) or Represents a hydroxyphenylene group represented by the following formula (12E).)

(Production Example 2) Production of Epoxy Resin 1 A separable flask was equipped with a stirrer, a thermometer, a reflux condenser, and a nitrogen inlet, and 100 parts by mass of the phenolic resin curing agent 1 described above, epichlorohydrin (manufactured by Tokyo Chemical Industry Co., Ltd.) ) 300 parts by mass and 50 parts by mass of toluene were weighed and dissolved by heating to 100 ° C., then 45 parts by mass of sodium hydroxide (solid fine granular, purity 99% reagent) was gradually added over 3 hours, The reaction was allowed to proceed for an additional 2 hours. Next, add 200 parts by mass of toluene and dissolve, then add 150 parts by mass of distilled water, shake, discard the aqueous layer (water washing), and repeat the operation until the washing water becomes neutral. was distilled off at 125° C. under reduced pressure of 2 mmHg. 300 parts by mass of methyl isobutyl ketone was added to the resulting solid to dissolve it, heated to 70° C., 9.5 parts by mass of a 30% by mass sodium hydroxide aqueous solution was added over 1 hour, and the mixture was further reacted for 1 hour. , and the aqueous layer was discarded. Epoxy resin 1 is obtained by adding 150 parts by mass of distilled water to the oil layer and performing a water washing operation, repeating the same water washing operation until the washing water becomes neutral, and then distilling off methyl isobutyl ketone by heating and reducing pressure. rice field.

This epoxy resin 1 is a compound represented by the following general formula (13A), in which a part of the glycidyl ether group remains as a hydroxyl group, so that the epoxy equivalent is 220 g/eq. , it is confirmed that (M/(M+N)) is 0.87. That is, since the theoretical epoxy equivalent of the epoxy resin represented by the general formula (13A) calculated from the hydroxyl equivalent of 135 of the raw material phenol resin curing agent 1 is 191, each polymer of the epoxy resin 1 has a glycidyl ether group. It has been confirmed that (M/(M+N)), where M is the total number of , and N is the total number of hydroxyl groups possessed by each polymer, is 0.87. Moreover, the number average molecular weight of the epoxy resin 1 was 530.

The fact that hydroxyl groups corresponding to a deviation of 0.13 from the theoretical epoxy equivalent remain remains is due to the fact that the obtained epoxy resin 1 was reacted with an excess acetylating agent and analyzed by NMR. % were esters based on phenolic hydroxyl groups.

(In formula (13A), two Y each independently represent a glycidylated phenyl group represented by the following formula (13B) or the following formula (13C), and X represents the following formula (13D) or the following It represents a glycidylated phenylene group represented by formula (13E).)

(Examples 1 to 9, Comparative Examples 1 to 4)
(Preparation of encapsulating resin composition)
For each example and each comparative example, a sealing resin composition was prepared as follows.
First, each component shown in Table 1 was mixed with a mixer. Next, the obtained mixture was roll-kneaded, cooled and pulverized to obtain a sealing resin composition in the form of granules.

Details of each component in Table 1 are as follows. In addition, the blending ratio of each component shown in Table 1 indicates the blending ratio (parts by mass) with respect to the entire resin composition.
(Thermosetting resin or its raw material)
Epoxy resin 1: Epoxy resin obtained in Production Example 2 Epoxy resin 2: Biphenyl aralkyl type epoxy resin (NC3000, manufactured by Nippon Kayaku Co., Ltd.)
Epoxy resin 3: a mixture of triphenylmethane type epoxy resin and biphenyl type epoxy resin (manufactured by Japan Epoxy Resin Co., Ltd. "YL6677"
Epoxy resin 4: ortho-cresol novolak type epoxy resin (manufactured by Nippon Kayaku Co., Ltd., EOCN-1020-55)
Phenolic resin curing agent 1: Phenolic resin-based curing agent obtained in Production Example 1 Phenolic resin curing agent 2: Biphenyl aralkyl type phenolic resin (GPH-65, manufactured by Nippon Kayaku Co., Ltd.)
Phenolic resin curing agent 3: triphenylmethane type phenolic resin (manufactured by Air Water Chemicals, HE910-20)
Phenolic resin curing agent 4: Novolac type phenolic resin (manufactured by Sumitomo Bakelite Co., Ltd., PR-HF-3)

(filler)
Inorganic filler 1: Fused spherical silica (manufactured by Admatechs, mode diameter R = 10 µm, particle size Rmax = 18 µm, R/Rmax = 0.56)
Inorganic filler 2: Spherical silica (manufactured by Admatechs, SO-25R”)
Inorganic filler 3: fused spherical silica (Micron, TS-6021)
Inorganic filler 4: Fused spherical silica (FB560 manufactured by Denki Kagaku Kogyo Co., Ltd.)

(other ingredients)
Curing accelerator 1: a compound represented by the following formula (14)

Silane coupling agent 1: γ-glycidoxypropyltrimethoxysilane (manufactured by Chisso, GPS-M)
Release agent 1: Montan acid ester wax (Rekolb WE 4, manufactured by Clariant Japan)
Release agent 2: Montan acid ester wax (Licowax E manufactured by Clariant Japan)
Release agent 3: Nitrogen-containing montan acid ester wax (Recomnt TP NC 133, manufactured by Clariant Japan)
Release agent 4: carnauba wax (manufactured by Toa Kasei Co., Ltd., TOWAX-132)
Coloring agent 1: carbon black (manufactured by Mitsubishi Chemical Corporation, MA-600)

The encapsulating resin composition obtained as described above or a cured product thereof was evaluated as follows. The evaluation results are also shown in Table 1.

(spiral flow)
Using a low-pressure transfer molding machine ("KTS-30" manufactured by Kotaki Seiki Co., Ltd.), a mold for spiral flow measurement according to EMMI-1-66 was placed at a mold temperature of 200 ° C., an injection pressure of 6.9 MPa, and a The obtained encapsulating resin composition was injected and cured under the condition of pressure time of 120 seconds, and the spiral flow was measured. The unit is cm.

(Glass transition temperature Tg (TMA))
Using a transfer molding apparatus, the resulting encapsulating resin composition was injection molded at a mold temperature of 200° C., an injection pressure of 9.8 MPa, and a curing time of 120 seconds to obtain a molded product of 15 mm×4 mm×4 mm. .
Then, the obtained molded article was post-cured at 250° C. for 4 hours to prepare a test piece.

After that, the obtained test piece is subjected to thermomechanical analysis using a thermomechanical analyzer (manufactured by Seiko Instruments Inc., TMA100) under the conditions of a measurement temperature range of 0 ° C. to 400 ° C. and a heating rate of 5 ° C./min. The glass transition temperature was measured. The unit of glass transition temperature is °C.

(Weight reduction rate)
For the cured product used for measuring the glass transition temperature, the weight loss rate was measured after exposing the cured product to 200° C. for 1000 hours.

(flame resistance)
Using a low-pressure transfer molding machine (KTS-30, manufactured by Kotaki Seiki Co., Ltd.), under the conditions of mold temperature 175 ° C., injection pressure 9.8 MPa, injection time 15 seconds, curing time 120 seconds, the sealing resin in each example The composition was injection molded to produce 6.4 mm thick flame resistant test specimens. After the prepared test piece was post-cured at 175° C. for 8 hours, a flame resistance test was performed according to the standard of UL94 vertical method to determine flame resistance. Table 1 shows the flame resistance rank after determination.

(Mold underfill (MUF) fillability)
Mold temperature: 175 ° C., injection speed: 10.5 mm / s, injection pressure: 3.5 MPa, curing time: 120 seconds, tablet size: 40 mmΦ-40 g (molding pressure 8 MPa). A sealing resin composition was injected into a rectangular channel having a width of 5 mm and a slit gap (G) of 25 μm, and the filling length from the upstream end of the channel was measured and evaluated according to the following criteria.
○: Filling length is 20 mm or more △: Filling length is 10 mm or more and less than 20 mm ×: Filling length is less than 10 mm

(higher viscosity)
The Koka type viscosity of the encapsulating resin composition obtained in each example and each comparative example was measured using a Koka type flow tester (manufactured by Shimadzu Corporation, CFT-500) at 200 ° C. and a pressure of 10 kgf / cm. ^2. Koka-shiki viscosity (Pa·s) was measured under the condition of a capillary diameter of 0.5 mm.

100 semiconductor device 110 semiconductor device 20 semiconductor element 22 bump 24 gap 30 substrate 32 die pad 34 outer lead 40 wire 50 sealing material 60 solder ball

Claims (7)

The following conditions (A) to (D):
(A) Semiconductor device with power consumption of 2.0 W or more
(B) SiC, GaN, Ga₂O.₃and a semiconductor element consisting of one or more semiconductors selected from the group consisting of diamond
(C) a semiconductor device with a voltage of 1.0 V or higher
(D) Power density is 10 W/cm³more semiconductor elements
A resin composition for encapsulating a power semiconductor element that satisfies any one of
for transfer molding,
The encapsulating resin composition contains a curable resin and an inorganic filler,
Rmax (μm) is the particle size at which the cumulative frequency from the large particle size side of the volume-based particle size distribution of the particles contained in the inorganic filler is 5%,
When the maximum peak diameter of the volume-based particle size distribution of the particles contained in the inorganic filler is R (μm),
R<Rmax,
1 μm≦R≦24 μm,
R/Rmax≧0.45,
A cured product of the encapsulating resin composition has a glass transition temperature of 180° C. or higher and 270° C. or lower,
The weight loss when the cured product is exposed to 200 ° C. for 1000 hours is 0.12% or less,
The encapsulating resin composition has a melt viscosity of 3 Pa s or more and 15 Pa s or less,
A resin composition for sealing, wherein the spiral flow length of the resin composition for sealing is 100 cm or more. The encapsulating resin composition according to claim 1, wherein the filling length of the encapsulating resin composition measured under the following conditions is 10 mm or more.
(Measurement condition)
Mold temperature: 175 ° C., injection speed: 10.5 mm / s, injection pressure: 3.5 MPa, curing time: 120 seconds, tablet size: 40 mmΦ-40 g, the width formed in the mold is 5 mm, The sealing resin composition is injected into a rectangular channel with a slit gap of 25 μm, and the filling length from the upstream end of the channel is measured. The sealing resin according to claim 1 or 2, wherein the curable resin contains a phenol resin curing agent represented by the following general formula (1A) and an epoxy resin represented by the following general formula (2A). composition .

(In the above general formula (1A), two Y each independently represent a hydroxyphenyl group represented by the following general formula (1B) or the following general formula (1C), and X is the following general formula (1D ) or a hydroxyphenylene group represented by the following general formula (1E), n represents a number of 0 or more, and when n is 2 or more, two or more X are each independently the same Each R ¹ independently represents a hydrocarbon group having 1 to 5 carbon atoms, and a represents an integer of 0 to 4. Further, the above general formula (1A) is represented by the following general It has at least one of a divalent hydroxyphenyl group represented by formula (1C) and a divalent hydroxyphenylene group represented by the following general formula (1E).)

(In general formulas (1B) to (1E) above, R ² and R ³ each independently represent a hydrocarbon group having 1 to 5 carbon atoms, b is an integer of 0 to 4, c is 0 to 3 , d is an integer of 0 to 3, and e is an integer of 0 to 2.)

(In the above general formula (2A), two Y each independently represent a glycidylated phenyl group represented by the following general formula (2B) or the following general formula (2C), and X represents the following general formula ( 2D) or a glycidylated phenylene group represented by the following general formula (2E), n represents a number of 0 or more, and when n is 2 or more, two or more X are each independently the same Each R ¹ independently represents a hydrocarbon group having 1 to 5 carbon atoms, and a represents an integer of 0 to 4. Further, the above general formula (2A) is: At least one of a glycidyl phenyl group having two glycidyl ether groups represented by the following general formula (2C) and a glycidyl phenylene group having two glycidyl ether groups represented by the following general formula (2E) have.)

(In general formulas (2B) to (2E) above, R ² and R ³ each independently represent a hydrocarbon group having 1 to 5 carbon atoms, b is an integer of 0 to 4, c is 0 to 3 , d is an integer of 0 to 3, and e is an integer of 0 to 2.) 4. The power semiconductor element according to any one of claims 1 to 3, wherein the power semiconductor element is provided on a substrate, and the sealing resin composition fills a gap between the substrate and the semiconductor element. The encapsulating resin composition . The power semiconductor element is provided on a substrate, and when the gap between the substrate and the semiconductor element is G (μm), the ratio of R to G (R/G) is 0.1. 5. The encapsulating resin composition according to any one of claims 1 to 4, which is 05 or more and 0.7 or less. 1 or 1 selected from the group consisting of a rectifier diode, a power transistor, a power MOSFET, an insulated gate bipolar transistor (IGBT), a thyristor, a gate turn-off thyristor (GTO) and a triac, wherein the power semiconductor element is provided on a substrate; containing two or more electronic components,
6. The encapsulating resin composition according to any one of claims 1 to 5, wherein a gap G ([mu]m) between said substrate and said semiconductor element is 3 [mu]m or more and 35 [mu]m or less. The following conditions (A) to (D):
(A) A semiconductor element with a power consumption of 2.0 W or more (B) A semiconductor element made of one or more semiconductors selected from the group consisting of SiC, GaN, Ga ₂ O ₃ and diamond (C) A voltage of 1.0 V or more (D) a semiconductor device having a power density of 10 W/cm ³ or higher, a power semiconductor device is sealed by transfer molding with the sealing resin composition according to any one of claims 1 to 6. A method of manufacturing a semiconductor device, comprising a step of stopping.

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