JP2008277804A5 - - Google Patents

Download PDF

Info

Publication number
JP2008277804A5
JP2008277804A5 JP2008097679A JP2008097679A JP2008277804A5 JP 2008277804 A5 JP2008277804 A5 JP 2008277804A5 JP 2008097679 A JP2008097679 A JP 2008097679A JP 2008097679 A JP2008097679 A JP 2008097679A JP 2008277804 A5 JP2008277804 A5 JP 2008277804A5
Authority
JP
Japan
Prior art keywords
terminal
voltage
signal input
switch
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2008097679A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008277804A (ja
JP5285945B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2008097679A priority Critical patent/JP5285945B2/ja
Priority claimed from JP2008097679A external-priority patent/JP5285945B2/ja
Publication of JP2008277804A publication Critical patent/JP2008277804A/ja
Publication of JP2008277804A5 publication Critical patent/JP2008277804A5/ja
Application granted granted Critical
Publication of JP5285945B2 publication Critical patent/JP5285945B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2008097679A 2007-04-04 2008-04-04 半導体装置 Expired - Fee Related JP5285945B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008097679A JP5285945B2 (ja) 2007-04-04 2008-04-04 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007097991 2007-04-04
JP2007097991 2007-04-04
JP2008097679A JP5285945B2 (ja) 2007-04-04 2008-04-04 半導体装置

Publications (3)

Publication Number Publication Date
JP2008277804A JP2008277804A (ja) 2008-11-13
JP2008277804A5 true JP2008277804A5 (cg-RX-API-DMAC7.html) 2011-05-06
JP5285945B2 JP5285945B2 (ja) 2013-09-11

Family

ID=39826747

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008097679A Expired - Fee Related JP5285945B2 (ja) 2007-04-04 2008-04-04 半導体装置

Country Status (3)

Country Link
US (1) US8164933B2 (cg-RX-API-DMAC7.html)
JP (1) JP5285945B2 (cg-RX-API-DMAC7.html)
KR (1) KR101428788B1 (cg-RX-API-DMAC7.html)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8115160B2 (en) * 2008-03-14 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Protection circuit and photoelectric conversion device
JP5388632B2 (ja) * 2008-03-14 2014-01-15 株式会社半導体エネルギー研究所 半導体装置
KR100983123B1 (ko) * 2008-08-08 2010-09-17 삼성전기주식회사 저전력용 rf 직류 정류기
WO2011081041A1 (en) 2009-12-28 2011-07-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
WO2011108374A1 (en) * 2010-03-05 2011-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US8792260B2 (en) 2010-09-27 2014-07-29 Semiconductor Energy Laboratory Co., Ltd. Rectifier circuit and semiconductor device using the same
KR101228785B1 (ko) * 2011-03-15 2013-01-31 삼성전기주식회사 웨이크 업 기능을 갖는 무선 장치
KR101822491B1 (ko) 2011-04-01 2018-01-26 삼성전자주식회사 전압 조정 회로 및 이의 동작 방법
US8750002B2 (en) * 2012-06-06 2014-06-10 Power Integrations, Inc. Power limiting by modulating clock
JP2014045175A (ja) 2012-08-02 2014-03-13 Semiconductor Energy Lab Co Ltd 半導体装置
KR102792931B1 (ko) 2015-11-20 2025-04-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 상기 반도체 장치를 가지는 표시 장치, 및 상기 반도체 장치를 가지는 전자 기기
KR102332456B1 (ko) * 2017-08-31 2021-12-02 마이크론 테크놀로지, 인크 두 개의 트랜지스터들과 하나의 캐패시터를 갖는 메모리 셀을 가지며, 기준 전압과 결합된 트랜지스터들의 바디 영역들을 갖는 장치

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5461338A (en) * 1992-04-17 1995-10-24 Nec Corporation Semiconductor integrated circuit incorporated with substrate bias control circuit
JP3199922B2 (ja) * 1993-09-08 2001-08-20 株式会社日立製作所 同期整流回路
JPH0962808A (ja) * 1995-08-25 1997-03-07 Mitsubishi Electric Corp 非接触icカード及び非接触icカードシステム
TW400650B (en) * 1996-11-26 2000-08-01 Hitachi Ltd Semiconductor integrated circuit device
JP3937457B2 (ja) * 1997-11-13 2007-06-27 セイコーエプソン株式会社 半導体集積回路、動作状態検出器及び電子機器
JP2001051292A (ja) * 1998-06-12 2001-02-23 Semiconductor Energy Lab Co Ltd 半導体装置および半導体表示装置
US6372558B1 (en) * 1998-08-18 2002-04-16 Sony Corporation Electrooptic device, driving substrate for electrooptic device, and method of manufacturing the device and substrate
JP2000197365A (ja) 1998-12-24 2000-07-14 Denso Corp 直流電源回路
JP4332925B2 (ja) 1999-02-25 2009-09-16 ソニー株式会社 半導体装置およびその製造方法
JP3475237B2 (ja) 2000-07-24 2003-12-08 東京大学長 電力制御装置及び方法並びに電力制御プログラムを記録した記録媒体
US6731135B2 (en) * 2001-06-14 2004-05-04 Artisan Components, Inc. Low voltage differential signaling circuit with mid-point bias
WO2003009385A1 (en) * 2001-07-19 2003-01-30 Sharp Kabushiki Kaisha Semiconductor device, semiconductor storage device and production methods therefor
JP2003085506A (ja) 2001-09-12 2003-03-20 Yoshikawa Rf System Kk データキャリアにおける過電圧防止回路
KR100451358B1 (ko) * 2002-03-04 2004-10-06 주식회사 엘지이아이 마이크로파를 이용한 조명장치의 전원 공급 장치
US6777829B2 (en) * 2002-03-13 2004-08-17 Celis Semiconductor Corporation Rectifier utilizing a grounded antenna
CN100394346C (zh) * 2002-04-26 2008-06-11 株式会社瑞萨科技 半导体器件和集成电路卡
US7307317B2 (en) * 2003-04-04 2007-12-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, CPU, image processing circuit and electronic device, and driving method of semiconductor device
TWI220084B (en) * 2003-06-09 2004-08-01 Acbel Polytech Inc Synchronous rectifying power converter controlled by current transformer
US7511421B2 (en) * 2003-08-25 2009-03-31 Semiconductor Energy Laboratory Co., Ltd. Mixed metal and organic electrode for organic device
JP4221274B2 (ja) * 2003-10-31 2009-02-12 株式会社東芝 半導体集積回路および電源電圧・基板バイアス制御回路
EP1709688A4 (en) * 2004-01-30 2014-12-31 Semiconductor Energy Lab SEMICONDUCTOR DEVICE
JP4519713B2 (ja) * 2004-06-17 2010-08-04 株式会社東芝 整流回路とこれを用いた無線通信装置
JP4265487B2 (ja) 2004-06-17 2009-05-20 富士通株式会社 リーダー装置、その装置の送信方法及びタグ
US20070003070A1 (en) * 2004-11-30 2007-01-04 Matsushita Electric Industrial Co., Ltd. Signal detection method and device
JP4867915B2 (ja) * 2005-02-16 2012-02-01 株式会社日立製作所 電子タグチップ
EP1722466A1 (en) * 2005-05-13 2006-11-15 STMicroelectronics S.r.l. Method and relative circuit for generating a control voltage of a synchronous rectifier
JP2007036216A (ja) * 2005-06-24 2007-02-08 Semiconductor Energy Lab Co Ltd 半導体装置及び無線通信システム
JP2007043825A (ja) * 2005-08-03 2007-02-15 Denso Corp 車両用発電制御装置

Similar Documents

Publication Publication Date Title
JP2008277804A5 (cg-RX-API-DMAC7.html)
FR2932005B1 (fr) Circuit a transistor integres dans trois dimensions et ayant une tension de seuil vt ajustable dynamiquement
JP2016129394A5 (cg-RX-API-DMAC7.html)
JP2018022185A5 (ja) 半導体装置
JP2011176870A5 (ja) 半導体装置、モジュール及び電子機器
JP2018173647A5 (ja) 半導体装置及び電子機器
JP2015132816A5 (ja) 電子機器
JP2017227854A5 (cg-RX-API-DMAC7.html)
JP2011141543A5 (ja) 表示装置、表示モジュール及び電子機器
JP2015188214A5 (cg-RX-API-DMAC7.html)
JP2015511112A5 (cg-RX-API-DMAC7.html)
JP2012010580A5 (cg-RX-API-DMAC7.html)
JP2012009125A5 (ja) 表示装置及び電子機器
JP2009175716A5 (cg-RX-API-DMAC7.html)
EP4411819A3 (en) Solid-state imaging device and electronic apparatus
JP2016038930A5 (ja) 半導体装置
JP2017041878A5 (ja) 撮像装置及び電子機器
US20100231048A1 (en) Power source switching circuit
JP2018513582A5 (cg-RX-API-DMAC7.html)
JP2013214958A5 (cg-RX-API-DMAC7.html)
WO2016144762A3 (en) Rf circuit with switch transistor with body connection
JP2017092469A5 (ja) 半導体装置
JP2015188201A5 (cg-RX-API-DMAC7.html)
JP2012022311A5 (ja) 入出力装置
JP2004205957A5 (cg-RX-API-DMAC7.html)