JP2008277580A - 導電膜パターンの形成方法、デバイスの製造方法、及び液滴吐出ヘッドの製造方法 - Google Patents
導電膜パターンの形成方法、デバイスの製造方法、及び液滴吐出ヘッドの製造方法 Download PDFInfo
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- JP2008277580A JP2008277580A JP2007120214A JP2007120214A JP2008277580A JP 2008277580 A JP2008277580 A JP 2008277580A JP 2007120214 A JP2007120214 A JP 2007120214A JP 2007120214 A JP2007120214 A JP 2007120214A JP 2008277580 A JP2008277580 A JP 2008277580A
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- conductive film
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- wiring
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- 238000000034 method Methods 0.000 title claims abstract description 82
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 239000010408 film Substances 0.000 claims abstract description 181
- 238000007747 plating Methods 0.000 claims abstract description 104
- 239000000758 substrate Substances 0.000 claims abstract description 93
- 239000010409 thin film Substances 0.000 claims abstract description 51
- 230000008569 process Effects 0.000 claims abstract description 33
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims description 55
- 239000002184 metal Substances 0.000 claims description 55
- 229910045601 alloy Inorganic materials 0.000 claims description 13
- 239000000956 alloy Substances 0.000 claims description 13
- 238000007772 electroless plating Methods 0.000 claims description 9
- 229910052737 gold Inorganic materials 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000007788 liquid Substances 0.000 abstract description 23
- 235000012431 wafers Nutrition 0.000 description 32
- 239000010410 layer Substances 0.000 description 28
- 239000010931 gold Substances 0.000 description 24
- 239000000463 material Substances 0.000 description 16
- 238000000151 deposition Methods 0.000 description 12
- 230000008021 deposition Effects 0.000 description 12
- 238000007789 sealing Methods 0.000 description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- 229910018487 Ni—Cr Inorganic materials 0.000 description 8
- 239000010949 copper Substances 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 238000005192 partition Methods 0.000 description 4
- NLKNQRATVPKPDG-UHFFFAOYSA-M potassium iodide Substances [K+].[I-] NLKNQRATVPKPDG-UHFFFAOYSA-M 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 238000001994 activation Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
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- 229910052709 silver Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
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- 239000010936 titanium Substances 0.000 description 2
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- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-N Sulfurous acid Chemical compound OS(O)=O LSNNMFCWUKXFEE-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- RXNUQHQAZAAIDP-UHFFFAOYSA-L sodium;gold(1+);sulfite Chemical compound [Na+].[Au+].[O-]S([O-])=O RXNUQHQAZAAIDP-UHFFFAOYSA-L 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
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- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007120214A JP2008277580A (ja) | 2007-04-27 | 2007-04-27 | 導電膜パターンの形成方法、デバイスの製造方法、及び液滴吐出ヘッドの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007120214A JP2008277580A (ja) | 2007-04-27 | 2007-04-27 | 導電膜パターンの形成方法、デバイスの製造方法、及び液滴吐出ヘッドの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008277580A true JP2008277580A (ja) | 2008-11-13 |
| JP2008277580A5 JP2008277580A5 (https=) | 2010-06-24 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007120214A Withdrawn JP2008277580A (ja) | 2007-04-27 | 2007-04-27 | 導電膜パターンの形成方法、デバイスの製造方法、及び液滴吐出ヘッドの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2008277580A (https=) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020213133A1 (ja) * | 2019-04-18 | 2020-10-22 | パナソニック・タワージャズセミコンダクター株式会社 | 半導体装置 |
| JP2022094222A (ja) * | 2020-12-14 | 2022-06-24 | 日東電工株式会社 | 配線回路基板集合体シート |
-
2007
- 2007-04-27 JP JP2007120214A patent/JP2008277580A/ja not_active Withdrawn
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020213133A1 (ja) * | 2019-04-18 | 2020-10-22 | パナソニック・タワージャズセミコンダクター株式会社 | 半導体装置 |
| JP2022094222A (ja) * | 2020-12-14 | 2022-06-24 | 日東電工株式会社 | 配線回路基板集合体シート |
| JP7184865B2 (ja) | 2020-12-14 | 2022-12-06 | 日東電工株式会社 | 配線回路基板集合体シート |
| US12563675B2 (en) | 2020-12-14 | 2026-02-24 | Nitto Denko Corporation | Wiring circuit board assembly sheet |
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