JP2008269863A - プラズマディスプレイパネルの製造方法 - Google Patents
プラズマディスプレイパネルの製造方法 Download PDFInfo
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- JP2008269863A JP2008269863A JP2007108917A JP2007108917A JP2008269863A JP 2008269863 A JP2008269863 A JP 2008269863A JP 2007108917 A JP2007108917 A JP 2007108917A JP 2007108917 A JP2007108917 A JP 2007108917A JP 2008269863 A JP2008269863 A JP 2008269863A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 239000011521 glass Substances 0.000 claims abstract description 75
- 239000000463 material Substances 0.000 claims abstract description 74
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 229910000416 bismuth oxide Inorganic materials 0.000 claims abstract description 39
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims abstract description 39
- 229910052751 metal Inorganic materials 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 27
- 229910052709 silver Inorganic materials 0.000 claims abstract description 16
- 239000004332 silver Substances 0.000 claims abstract description 16
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 32
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 26
- 238000010304 firing Methods 0.000 claims description 20
- 239000010949 copper Substances 0.000 claims description 18
- 239000003989 dielectric material Substances 0.000 claims description 13
- 238000005192 partition Methods 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 229910052759 nickel Inorganic materials 0.000 claims description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- 229910017052 cobalt Inorganic materials 0.000 claims description 8
- 239000010941 cobalt Substances 0.000 claims description 8
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 8
- 238000007789 sealing Methods 0.000 claims 1
- 230000007613 environmental effect Effects 0.000 abstract description 7
- 230000004888 barrier function Effects 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 163
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 14
- 239000000203 mixture Substances 0.000 description 13
- 239000011651 chromium Substances 0.000 description 12
- 239000011572 manganese Substances 0.000 description 12
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 8
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 8
- 238000000206 photolithography Methods 0.000 description 8
- 239000011230 binding agent Substances 0.000 description 7
- 239000002003 electrode paste Substances 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 6
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 6
- 229910052804 chromium Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000007607 die coating method Methods 0.000 description 6
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 6
- 239000000395 magnesium oxide Substances 0.000 description 6
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 6
- 229910052748 manganese Inorganic materials 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten trioxide Chemical compound O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 description 6
- 229910000420 cerium oxide Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000010419 fine particle Substances 0.000 description 5
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 5
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 5
- 239000011241 protective layer Substances 0.000 description 5
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910052707 ruthenium Inorganic materials 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 3
- 102100039169 [Pyruvate dehydrogenase [acetyl-transferring]]-phosphatase 1, mitochondrial Human genes 0.000 description 3
- 101710126534 [Pyruvate dehydrogenase [acetyl-transferring]]-phosphatase 1, mitochondrial Proteins 0.000 description 3
- GHPGOEFPKIHBNM-UHFFFAOYSA-N antimony(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Sb+3].[Sb+3] GHPGOEFPKIHBNM-UHFFFAOYSA-N 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- 239000002905 metal composite material Substances 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910001935 vanadium oxide Inorganic materials 0.000 description 3
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 2
- 238000006124 Pilkington process Methods 0.000 description 2
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 229910000428 cobalt oxide Inorganic materials 0.000 description 2
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 2
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- 239000003999 initiator Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- UFQXGXDIJMBKTC-UHFFFAOYSA-N oxostrontium Chemical compound [Sr]=O UFQXGXDIJMBKTC-UHFFFAOYSA-N 0.000 description 2
- 239000003973 paint Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- -1 and the like Inorganic materials 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- KAGOZRSGIYZEKW-UHFFFAOYSA-N cobalt(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Co+3].[Co+3] KAGOZRSGIYZEKW-UHFFFAOYSA-N 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J11/00—Gas-filled discharge tubes with alternating current induction of the discharge, e.g. alternating current plasma display panels [AC-PDP]; Gas-filled discharge tubes without any main electrode inside the vessel; Gas-filled discharge tubes with at least one main electrode outside the vessel
- H01J11/10—AC-PDPs with at least one main electrode being out of contact with the plasma
- H01J11/12—AC-PDPs with at least one main electrode being out of contact with the plasma with main electrodes provided on both sides of the discharge space
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J11/00—Gas-filled discharge tubes with alternating current induction of the discharge, e.g. alternating current plasma display panels [AC-PDP]; Gas-filled discharge tubes without any main electrode inside the vessel; Gas-filled discharge tubes with at least one main electrode outside the vessel
- H01J11/20—Constructional details
- H01J11/34—Vessels, containers or parts thereof, e.g. substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J11/00—Gas-filled discharge tubes with alternating current induction of the discharge, e.g. alternating current plasma display panels [AC-PDP]; Gas-filled discharge tubes without any main electrode inside the vessel; Gas-filled discharge tubes with at least one main electrode outside the vessel
- H01J11/20—Constructional details
- H01J11/34—Vessels, containers or parts thereof, e.g. substrates
- H01J11/38—Dielectric or insulating layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- Gas-Filled Discharge Tubes (AREA)
Abstract
【解決手段】本発明のPDPの製造方法は、ガラス基板上に表示電極、遮光層および誘電体層が形成される前面板と、基板上に電極、隔壁および蛍光体層が形成される背面板とを対向配置するとともに周囲を封着して放電空間を形成するPDPの製造方法であって、前記表示電極が少なくとも、銀およびガラス材料を含有する金属電極層と、黒色材料およびガラス材料を含有する黒色層とを含む複数層で構成され、前記誘電体層は、酸化ビスマスを5重量%以上25重量%以下含有し、前記誘電体層は570℃〜590℃で焼成することを特徴とする。
【選択図】図4
Description
図1は本発明の実施の形態におけるPDPの構造を示す斜視図である。PDPの基本構造は、一般的な交流面放電型PDPと同様である。図1に示すように、PDP1は前面ガラス基板3などよりなる前面板2と、背面ガラス基板11などよりなる背面板10とが対向して配置され、その外周部をガラスフリットなどからなる封着材によって気密封着されている。封着されたPDP1内部の放電空間16には、NeおよびXeなどの放電ガスが400Torr〜600Torrの圧力で封入されている。
本発明の実施の形態での効果を確認するために、42インチのハイビジョンに適合する前面板の構成にて、試験試料を作製し評価を行った。
2 前面板
3 前面ガラス基板
4 走査電極
4a,5a 透明電極
4b,5b 金属バス電極
5 維持電極
6 表示電極
7 遮光層
8 誘電体層
9 保護層
10 背面板
11 背面ガラス基板
12 アドレス電極
13 下地誘電体層
14 隔壁
15 蛍光体層
16 放電空間
41b,51b 黒色電極
42b,52b 白色電極
81 第1誘電体層
82 第2誘電体層
Claims (4)
- ガラス基板上に表示電極、遮光層および誘電体層が形成される前面板と、基板上に電極、隔壁および蛍光体層が形成される背面板とを対向配置するとともに周囲を封着して放電空間を形成するプラズマディスプレイパネルの製造方法であって、
前記表示電極が少なくとも、銀およびガラス材料を含有する金属電極層と、黒色材料およびガラス材料を含有する黒色層とを含む複数層で構成され、
前記誘電体層は、酸化ビスマス(Bi2O3)を5重量%以上25重量%以下含有し、
前記誘電体層は570℃〜590℃で焼成することを特徴とするプラズマディスプレイパネルの製造方法。 - 前記黒色層にはコバルト(Co)、ニッケル(Ni)もしくは銅(Cu)またはこれらの酸化物を含有することを特徴とする請求項1記載のプラズマディスプレイパネルの製造方法。
- 前記遮光層がガラス材料を含有し、前記ガラス材料の軟化点が誘電体材料の焼成温度よりも低いことを特徴とする請求項1および2記載のプラズマディスプレイパネルの製造方法。
- 前記遮光層のガラス材料の酸化ビスマス(Bi2O3)の含有量が5重量%以上25重量%以下であることを特徴とする請求項3記載のプラズマディスプレイパネルの製造方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007108917A JP2008269863A (ja) | 2007-04-18 | 2007-04-18 | プラズマディスプレイパネルの製造方法 |
EP08720581A EP2012339A4 (en) | 2007-04-18 | 2008-03-25 | METHOD FOR PRODUCING A PLASMA DISPLAY PANEL |
PCT/JP2008/000702 WO2008129823A1 (ja) | 2007-04-18 | 2008-03-25 | プラズマディスプレイパネルの製造方法 |
US12/294,516 US20100248579A1 (en) | 2007-04-18 | 2008-03-25 | Method of manufacturing plasma display panel |
KR1020087030530A KR20090013234A (ko) | 2007-04-18 | 2008-03-25 | 플라즈마 디스플레이 패널의 제조 방법 |
CNA2008800008928A CN101548356A (zh) | 2007-04-18 | 2008-03-25 | 等离子体显示板的制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007108917A JP2008269863A (ja) | 2007-04-18 | 2007-04-18 | プラズマディスプレイパネルの製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2008269863A true JP2008269863A (ja) | 2008-11-06 |
Family
ID=39875355
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007108917A Pending JP2008269863A (ja) | 2007-04-18 | 2007-04-18 | プラズマディスプレイパネルの製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20100248579A1 (ja) |
EP (1) | EP2012339A4 (ja) |
JP (1) | JP2008269863A (ja) |
KR (1) | KR20090013234A (ja) |
CN (1) | CN101548356A (ja) |
WO (1) | WO2008129823A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ES2715311T3 (es) | 2012-03-19 | 2019-06-03 | Steadymed Ltd | Mecanismo de conexión de fluido para bombas tipo parche |
JP5888277B2 (ja) * | 2013-04-04 | 2016-03-16 | Tdk株式会社 | 黒色マーク組成物およびこれを用いた電子部品 |
Citations (5)
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JP2003187692A (ja) * | 2001-12-20 | 2003-07-04 | Taiyo Ink Mfg Ltd | 黒色ペースト組成物及びそれを用いて黒色パターンを形成したプラズマディスプレイパネル |
JP2004063247A (ja) * | 2002-07-29 | 2004-02-26 | Matsushita Electric Ind Co Ltd | プラズマディスプレイパネルの製造方法 |
JP2006253143A (ja) * | 2005-03-09 | 2006-09-21 | E I Du Pont De Nemours & Co | 黒色導電性厚膜組成物、黒色電極、およびこれらの形成方法 |
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JP3778223B2 (ja) | 1995-05-26 | 2006-05-24 | 株式会社日立プラズマパテントライセンシング | プラズマディスプレイパネル |
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WO2005052976A1 (ja) * | 2003-11-26 | 2005-06-09 | Matsushita Electric Industrial Co., Ltd. | プラズマディスプレイパネル |
US20050242725A1 (en) * | 2004-04-26 | 2005-11-03 | Shinya Hasegawa | Glass composition and paste composition suitable for a plasma display panel, and plasma display panel |
JPWO2006038621A1 (ja) * | 2004-10-07 | 2008-05-15 | 松下電器産業株式会社 | プラズマディスプレイパネル |
US20060223690A1 (en) * | 2005-04-01 | 2006-10-05 | Tsutomu Mutoh | Photosensitive thick-film dielectric paste composition and method for making an insulating layer using same |
JP4089739B2 (ja) * | 2005-10-03 | 2008-05-28 | 松下電器産業株式会社 | プラズマディスプレイパネル |
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2007
- 2007-04-18 JP JP2007108917A patent/JP2008269863A/ja active Pending
-
2008
- 2008-03-25 CN CNA2008800008928A patent/CN101548356A/zh active Pending
- 2008-03-25 WO PCT/JP2008/000702 patent/WO2008129823A1/ja active Application Filing
- 2008-03-25 US US12/294,516 patent/US20100248579A1/en not_active Abandoned
- 2008-03-25 EP EP08720581A patent/EP2012339A4/en not_active Withdrawn
- 2008-03-25 KR KR1020087030530A patent/KR20090013234A/ko not_active Application Discontinuation
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2003187692A (ja) * | 2001-12-20 | 2003-07-04 | Taiyo Ink Mfg Ltd | 黒色ペースト組成物及びそれを用いて黒色パターンを形成したプラズマディスプレイパネル |
JP2004063247A (ja) * | 2002-07-29 | 2004-02-26 | Matsushita Electric Ind Co Ltd | プラズマディスプレイパネルの製造方法 |
JP2006253143A (ja) * | 2005-03-09 | 2006-09-21 | E I Du Pont De Nemours & Co | 黒色導電性厚膜組成物、黒色電極、およびこれらの形成方法 |
WO2007040121A1 (ja) * | 2005-10-03 | 2007-04-12 | Matsushita Electric Industrial Co., Ltd. | プラズマディスプレイパネル |
WO2007040142A1 (ja) * | 2005-10-03 | 2007-04-12 | Matsushita Electric Industrial Co., Ltd. | プラズマディスプレイパネル |
Also Published As
Publication number | Publication date |
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CN101548356A (zh) | 2009-09-30 |
US20100248579A1 (en) | 2010-09-30 |
WO2008129823A1 (ja) | 2008-10-30 |
EP2012339A1 (en) | 2009-01-07 |
EP2012339A4 (en) | 2011-03-09 |
KR20090013234A (ko) | 2009-02-04 |
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