JP2008263119A - Image sensor and its manufacturing method - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 239000004065 semiconductor Substances 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims description 37
- 238000000206 photolithography Methods 0.000 claims description 22
- 229920002120 photoresistant polymer Polymers 0.000 claims description 17
- 230000000295 complement effect Effects 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 239000007769 metal material Substances 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 229910021431 alpha silicon carbide Inorganic materials 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- 238000009413 insulation Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 5
- 238000001514 detection method Methods 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 206010047571 Visual impairment Diseases 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
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Abstract
Description
この発明はイメージセンサーに関し、特にキャリアクロストークを解消するためのシールド素子を備えるイメージセンサーに関する。 The present invention relates to an image sensor, and more particularly to an image sensor including a shield element for eliminating carrier crosstalk.
ＣＭＯＳ（相補型金属酸化膜半導体）やＣＣＤ（電荷結合素子）などのイメージセンサーは、光子を取り込んで電子に変換し、更に電子を測定可能な電圧に変換し、デジタルデータとして出力するシリコン半導体装置である。従来のイメージセンサーの機能を向上させるため、ＣＣＤやＣＭＯＳ素子に積層された水素化アモルファスシリコン（α-Si:H）を用いるＰＯＡＰ（能動画素上の光電変換体）型イメージセンサーが開発されている。ＰＯＡＰ型のイメージセンサーは、フィルファクターを向上させ、画素領域の全体を感光可能にする積層構造を有し、その中のα-Si:Hはエネルギーを有効に変換し、量子効率を向上させる効果がある。しかし、従来の研究で指摘されているとおり、この種のイメージセンサーはクロストーク、残像及びリーク電流信号などの問題を抱えている。特に隣接画素間のキャリアクロストークは、解像度及び均一性を低下させ、色の再現性に大きく影響する。 Image sensors such as CMOS (Complementary Metal Oxide Semiconductor) and CCD (Charge Coupled Device) are silicon semiconductor devices that take photons and convert them into electrons, then convert the electrons into measurable voltages and output them as digital data. It is. In order to improve the function of the conventional image sensor, a POAP (photoelectric conversion body on active pixel) type image sensor using hydrogenated amorphous silicon (α-Si: H) stacked on a CCD or CMOS device has been developed. . The POAP type image sensor has a stacked structure that improves the fill factor and makes the entire pixel area light sensitive, and α-Si: H in it effectively converts energy and improves quantum efficiency. There is. However, as pointed out in previous studies, this type of image sensor has problems such as crosstalk, afterimages, and leakage current signals. In particular, carrier crosstalk between adjacent pixels reduces resolution and uniformity, and greatly affects color reproducibility.
図１と図２を参照する。図１は従来のＰＯＡＰ型イメージセンサー１０の断面図であり、図２は図１に示す画素電極間の電位を示す模擬図である。従来のイメージセンサー１０は、基板１２上に設けられる複数の画素１４ａ、１４ｂ及び誘電層１６と、画素１４ａ、１４ｂ内に設けられる複数の画素回路（非表示）と、画素回路と誘電膜１６の上に設けられる複数の画素電極１８ａ、１８ｂと、画素電極１８ａ、１８ｂの上に設けられる光伝導層２０と、光伝導層２０の上に設けられる透明導電層２８とを含む。そのうち光伝導層２０は下から上まで順番にｎ型レイヤー２２と、真性層（ｉレイヤー）２４と、ｐ型レイヤー２６を含む。これらの層はｐ−ｉ−ｎ積層構造を形成し、受光の強度に対応する電荷に変換する。 Please refer to FIG. 1 and FIG. FIG. 1 is a cross-sectional view of a conventional POAP type image sensor 10, and FIG. 2 is a simulation diagram showing a potential between pixel electrodes shown in FIG. The conventional image sensor 10 includes a plurality of pixels 14 a and 14 b and a dielectric layer 16 provided on a substrate 12, a plurality of pixel circuits (non-display) provided in the pixels 14 a and 14 b, a pixel circuit and a dielectric film 16. It includes a plurality of pixel electrodes 18a, 18b provided on top, a photoconductive layer 20 provided on the pixel electrodes 18a, 18b, and a transparent conductive layer 28 provided on the photoconductive layer 20. Among them, the photoconductive layer 20 includes an n-type layer 22, an intrinsic layer (i-layer) 24, and a p-type layer 26 in order from the bottom to the top. These layers form a p-i-n stacked structure and convert it into charges corresponding to the intensity of received light.
しかし、光を当てると、従来のイメージセンサー１０は画素電極１８ａ、１８ｂの電圧が互いに異なるため、隣接した画素１４ａ、１４ｂの間では電位差による電界が発生する。例えば、光を当てるとき、画素電極１８ｂが高電位ＶＨとなり、画素電極１８ａが低電位ＶＬとなり、透明導電層２８が接地するとすれば、図２に示すように、隣接画素１４ａ、１４ｂの間ではリーク電流が発生し、高電位ＶＨの画素電極１８ｂから低電位ＶＬの画素電極１８ａへ電流が流れる。これにより発生するクロストークは、画像検知の忠実度を大きく低下させるおそれがある。 However, when light is applied, since the voltage of the pixel electrodes 18a and 18b in the conventional image sensor 10 is different from each other, an electric field due to a potential difference is generated between the adjacent pixels 14a and 14b. For example, when light is applied, if the pixel electrode 18b is at a high potential VH, the pixel electrode 18a is at a low potential VL, and the transparent conductive layer 28 is grounded, as shown in FIG. 2, between the adjacent pixels 14a and 14b, A leak current is generated, and a current flows from the high potential VH pixel electrode 18b to the low potential VL pixel electrode 18a. The crosstalk generated thereby may greatly reduce the fidelity of image detection.
したがって、ＰＯＡＰ型イメージセンサーの構造を改善し、隣接画素間のクロストークを抑え、画像検知の忠実度を向上させることは、解決すべき課題である。 Accordingly, it is a problem to be solved to improve the structure of the POAP type image sensor, suppress crosstalk between adjacent pixels, and improve the fidelity of image detection.
この発明は従来のクロストーク問題を解決するため、シールド素子を備えるイメージセンサー及びその製作方法を提供することを課題とする。 In order to solve the conventional crosstalk problem, an object of the present invention is to provide an image sensor including a shield element and a manufacturing method thereof.
この発明はイメージセンサーを提供する。該イメージセンサーは、半導体基板と、半導体基板の上に定められ、各々１個の画素電極を有する複数の画素と、画素電極の上に順次設置される光伝導層及び透明導電層と、それぞれの画素電極の間に設けられるシールド素子とを含む。そのうちシールド素子は、シールド電極と、シールド電極を被覆し、これを画素電極と光伝導層から分離する絶縁構造とを含む。 The present invention provides an image sensor. The image sensor includes a semiconductor substrate, a plurality of pixels each having one pixel electrode, a photoconductive layer and a transparent conductive layer that are sequentially installed on the pixel electrode, And a shield element provided between the pixel electrodes. Among them, the shield element includes a shield electrode and an insulating structure that covers the shield electrode and separates it from the pixel electrode and the photoconductive layer.
この発明は更にイメージセンサーの製作方法を提供する。該方法は、基板を提供し、基板の表面に第一導電層を形成し、第一導電層を一部除去して複数の画素電極を形成し、基板の表面に第一絶縁層と第二導電層を順次形成し、画素電極の表面に設けられる第二導電層と第一絶縁層を一部除去して残余の第一絶縁層とシールド電極を形成し、基板の表面に第二絶縁層を形成し、画素電極の表面に設けられる第二絶縁層を一部除去して残余の第二絶縁層を形成し、基板の上に光伝導層と透明導電層を順次形成するステップを含む。そのうちシールド電極はそれぞれの画素電極間の電極ギャップ領域に埋められ、残余の第一絶縁層と残余の第二絶縁層はシールド電極を被覆する絶縁構造を形成し、シールド電極と絶縁構造はシールド素子を形成する。 The present invention further provides a method for manufacturing an image sensor. The method provides a substrate, forms a first conductive layer on a surface of the substrate, partially removes the first conductive layer to form a plurality of pixel electrodes, and forms a first insulating layer and a second on the surface of the substrate. A conductive layer is sequentially formed, and the second conductive layer and the first insulating layer provided on the surface of the pixel electrode are partially removed to form a remaining first insulating layer and a shield electrode, and the second insulating layer is formed on the surface of the substrate. Forming a remaining second insulating layer by partially removing the second insulating layer provided on the surface of the pixel electrode, and sequentially forming a photoconductive layer and a transparent conductive layer on the substrate. Among them, the shield electrode is buried in the electrode gap region between the respective pixel electrodes, and the remaining first insulating layer and the remaining second insulating layer form an insulating structure covering the shield electrode, and the shield electrode and the insulating structure are shield elements. Form.
この発明は、隣接した画素または画素電極の間にシールド素子を設け、電極ギャップ領域に高い電位障壁を形成することで、クロストークを解消してイメージセンサーの画像検知機能を大幅に向上させる。シールド素子の製作に用いられる第二・第三ＰＥＰ工程はいずれも、画素電極パターンを定めるのと同じフォトマスクを利用するため、製作コストを増やすことはない。したがって、本発明を利用すれば、コストを追加せずにシールド素子を形成し、画像検知機能の優れたイメージセンサーを製作することができる。 According to the present invention, a shield element is provided between adjacent pixels or pixel electrodes, and a high potential barrier is formed in the electrode gap region, thereby eliminating crosstalk and greatly improving the image detection function of the image sensor. Since both the second and third PEP processes used for manufacturing the shield element use the same photomask as that for defining the pixel electrode pattern, the manufacturing cost is not increased. Therefore, if the present invention is used, a shield element can be formed without adding cost, and an image sensor having an excellent image detection function can be manufactured.
かかる装置及び方法の特徴を詳述するために、具体的な実施例を挙げ、図を参照して以下に説明する。 In order to elaborate on the features of such an apparatus and method, specific examples are given and described below with reference to the figures.
図３から図９を参照する。図３から図９はこの発明によるイメージセンサー１００の構造及び製作プロセスを表す説明図である。当該イメージセンサー１００はＰＯＡＰ型イメージセンサーである。図３に示すように、まずは半導体基板１０４（例えばシリコン基板）を含む半導体チップ１０２を設ける。半導体基板１０４の表面には、画素マトリックスを形成する複数の画素１０８が定められている。次に誘電層１０６の中に設けられる画素回路１１０として、半導体基板１０４の上に複数の電気素子をつくり、更に誘電層１０６の上（画素回路１１０の上）に第一導電層１１２を設ける。第一導電層１１２は金属材料、望ましくは窒化チタン（ＴｉＮ）からなる。その後、図４に示すように第一フォトリソグラフィー工程を行う。詳しく言えば、半導体基板１０４の表面にフォトレジスト層（非表示）を形成し、画素電極パターンのあるフォトマスクでフォトレジスト層に画素電極パターンを定め、更に第一導電層１１２の一部をエッチングして除去し、最後にフォトレジスト層を除去し、コンタクトホール１２４を介して対応する画素回路１１０にそれぞれ電気的に接続されて、ギャップＧをはさんでいるような画素電極１１４を各画素１０８に形成する。 Please refer to FIG. 3 to FIG. 3 to 9 are explanatory views showing the structure and manufacturing process of the image sensor 100 according to the present invention. The image sensor 100 is a POAP type image sensor. As shown in FIG. 3, first, a semiconductor chip 102 including a semiconductor substrate 104 (for example, a silicon substrate) is provided. A plurality of pixels 108 that form a pixel matrix are defined on the surface of the semiconductor substrate 104. Next, as the pixel circuit 110 provided in the dielectric layer 106, a plurality of electric elements are formed on the semiconductor substrate 104, and the first conductive layer 112 is further provided on the dielectric layer 106 (on the pixel circuit 110). The first conductive layer 112 is made of a metal material, preferably titanium nitride (TiN). Thereafter, a first photolithography process is performed as shown in FIG. More specifically, a photoresist layer (not shown) is formed on the surface of the semiconductor substrate 104, a pixel electrode pattern is defined on the photoresist layer with a photomask having a pixel electrode pattern, and a part of the first conductive layer 112 is etched. Finally, the photoresist layer is removed, and the pixel electrode 114 that is electrically connected to the corresponding pixel circuit 110 via the contact hole 124 and sandwiches the gap G is connected to each pixel 108. To form.
図５を参照する。半導体基板１０４の上に第一絶縁層１１６と第二導電層１１８を順次形成し、画素電極１１４及び露出した誘電層１０６を覆わせる。第一絶縁層１１６は酸化シリコンなどの酸化材料を堆積してつくったものであり、第二導電層１１８はポリシリコンや金属材料からなる。堆積法でつくられた第二導電層１１８は、隣接した画素電極１１４間の隙間（電極ギャップＧ）を埋めている。続いて図６に示すように、第二フォトリソグラフィー工程とエッチング工程を含むＰＥＰ工程（フォトリソグラフィー・エッチングプロセス）を行う。詳しく言えば、第二導電層１１８の表面にフォトレジスト層（非表示）を形成し、上記第一フォトリソグラフィー工程で使われたものと同じフォトマスクをフォトレジスト層にあて、画素電極パターンの反対である相補パターン１２０をフォトレジスト層に形成する。更にパターン化されたフォトレジスト層をエッチングマスクとして第二導電層１１８と第一絶縁層１１６の一部を除去し、大部分の画素電極１１４を露出させる。そうすると、残余の第二導電層は、隣接した画素電極１１４間に設けられるＴ字型のシールド電極１２２を形成する。一方、シールド電極１２２の下に残る第一絶縁層１１６’は、シールド電極１２２、画素電極１１４、及び誘電層１０６を分離する効果がある。本発明の好ましい実施例として、フォトリソグラフィーの露光率を調整し、相補パターン１２０の幅を電極ギャップＧより大きく定めることが可能である。この場合、画素電極１１４の縁部は残余の第一絶縁層１１６’とシールド電極１２２に覆われている。 Please refer to FIG. A first insulating layer 116 and a second conductive layer 118 are sequentially formed on the semiconductor substrate 104 to cover the pixel electrode 114 and the exposed dielectric layer 106. The first insulating layer 116 is formed by depositing an oxide material such as silicon oxide, and the second conductive layer 118 is made of polysilicon or a metal material. The second conductive layer 118 formed by the deposition method fills the gap (electrode gap G) between the adjacent pixel electrodes 114. Subsequently, as shown in FIG. 6, a PEP process (photolithographic etching process) including a second photolithography process and an etching process is performed. Specifically, a photoresist layer (not shown) is formed on the surface of the second conductive layer 118, the same photomask used in the first photolithography process is applied to the photoresist layer, and the opposite of the pixel electrode pattern. The complementary pattern 120 is formed on the photoresist layer. Further, a part of the second conductive layer 118 and the first insulating layer 116 is removed using the patterned photoresist layer as an etching mask, and most of the pixel electrodes 114 are exposed. Then, the remaining second conductive layer forms a T-shaped shield electrode 122 provided between adjacent pixel electrodes 114. On the other hand, the first insulating layer 116 ′ remaining under the shield electrode 122 has an effect of separating the shield electrode 122, the pixel electrode 114, and the dielectric layer 106. As a preferred embodiment of the present invention, it is possible to adjust the exposure rate of photolithography so that the width of the complementary pattern 120 is larger than the electrode gap G. In this case, the edge of the pixel electrode 114 is covered with the remaining first insulating layer 116 ′ and the shield electrode 122.
図７を参照する。続いて半導体基板１０４の全体に、酸化シリコンまたは窒化シリコンからなる第二絶縁層１２６を形成する。更に図８に示すように第三フォトリソグラフィー工程を行う。詳しく言えば、第二絶縁層１２６の表面にフォトレジスト層（非表示）を形成し、上記第一フォトリソグラフィー工程で使われたものと同じフォトマスクで、画素電極パターンの反対である相補パターンをフォトレジスト層に形成する。更にパターン化されたフォトレジスト層をエッチングマスクとして第二絶縁層１２６を一部除去する。本発明の好ましい実施例として、フォトリソグラフィーの露光率を調整し、残る第二絶縁層１２６’の幅をシールド電極１２２の幅と電極ギャップＧより大きく定め、画素電極１１４の縁部を残余の第二絶縁層１２６’で覆わせ、シールド電極１２２とその他の素子を分離させることが可能である。また別の実施例として、エッチバック法で第二絶縁層１２６を一部除去し、図８に示すような残余の第二絶縁層１２６’を形成することも可能である。注意すべきは、第二・第三フォトグラフィー工程は第一フォトリソグラフィー工程と同じフォトマスクを利用するため、第一フォトリソグラフィー工程と違うタイプのフォトレジスト（ポジティブまたはネガティブ）を使用しなければならない。例えば、第一フォトリソグラフィー工程ではポジティブフォトレジストで画素電極１１４のパターンを定めるとすれば、第二・第三フォトリソグラフィー工程ではネガティブフォトレジストで相補パターンを定めるべきであり、逆も同然である。 Please refer to FIG. Subsequently, a second insulating layer 126 made of silicon oxide or silicon nitride is formed on the entire semiconductor substrate 104. Further, a third photolithography process is performed as shown in FIG. More specifically, a photoresist layer (not shown) is formed on the surface of the second insulating layer 126, and a complementary pattern opposite to the pixel electrode pattern is formed using the same photomask used in the first photolithography process. Formed on the photoresist layer. Further, the second insulating layer 126 is partially removed using the patterned photoresist layer as an etching mask. As a preferred embodiment of the present invention, the exposure rate of photolithography is adjusted, the width of the remaining second insulating layer 126 ′ is determined to be larger than the width of the shield electrode 122 and the electrode gap G, and the edge of the pixel electrode 114 is set to the remaining first. The shield electrode 122 and other elements can be separated by covering with the two insulating layers 126 ′. As another example, the second insulating layer 126 may be partially removed by an etch back method to form a remaining second insulating layer 126 'as shown in FIG. It should be noted that since the second and third photolithography processes use the same photomask as the first photolithography process, a different type of photoresist (positive or negative) from the first photolithography process must be used. . For example, if the pattern of the pixel electrode 114 is defined by a positive photoresist in the first photolithography process, the complementary pattern should be defined by a negative photoresist in the second and third photolithography processes, and vice versa.
図８に示すように、残余の第一絶縁層１１６’、残余の第二絶縁層１２６’及びシールド電極１１２は、隣接した画素電極１１４間または隣接画素１０８間に設けられて、画素電極１１４の縁部を一部覆って残りの大部分を露出させるシールド素子１３０を形成する。そのうち残余の第一絶縁層１１６’と残余の第二絶縁層１２６’はシールド素子１３０の絶縁構造１２８を形成し、シールド電極１２２の下方及び表面を被覆し、シールド電極１２２を画素電極や後に形成されるその他の素子を分離する効果がある。また、図８に示すように、絶縁構造１２８の底面は画素電極１１４の底面とほぼ同じ平面で設けられ、言い換えれば誘電層１０６の表面に設けられている。 As shown in FIG. 8, the remaining first insulating layer 116 ′, the remaining second insulating layer 126 ′, and the shield electrode 112 are provided between adjacent pixel electrodes 114 or between adjacent pixels 108. A shield element 130 that covers a part of the edge and exposes most of the remaining part is formed. Of these, the remaining first insulating layer 116 ′ and the remaining second insulating layer 126 ′ form the insulating structure 128 of the shield element 130, covering the lower and surface of the shield electrode 122, and forming the shield electrode 122 on the pixel electrode and later. There is an effect of separating other elements to be separated. Further, as shown in FIG. 8, the bottom surface of the insulating structure 128 is provided in substantially the same plane as the bottom surface of the pixel electrode 114, in other words, provided on the surface of the dielectric layer 106.
図９を参照する。続いて画素電極１１４とシールド素子１３０の上に、下から上まで順番にｎ型レイヤー１３４、ｉレイヤー１３６、ｐ型レイヤー１３８からなる光伝導層１３２を形成する。ｎ型レイヤー１３４とｐ型レイヤー１３８は水素化アモルファス炭化シリコン（α-SiC:H）からなり、ｉレイヤー１３６はα-Si:Hからなる。ｎ型レイヤー１３４は、シールド素子１３０に覆われていない画素電極１１４に電気的に接続されている。また別の実施例として、下から上まで順番にｐ型レイヤー、ｉレイヤー、ｎ型レイヤーからなる光伝導層１３２を用いることも可能である。その後、光伝導層１３２の上にＩＴＯ（酸化インジウムすず）からなる透明導電層１４０を形成し、イメージセンサー１００の製作を完成させる。 Please refer to FIG. Subsequently, a photoconductive layer 132 including an n-type layer 134, an i-layer 136, and a p-type layer 138 is formed on the pixel electrode 114 and the shield element 130 in order from the bottom to the top. The n-type layer 134 and the p-type layer 138 are made of hydrogenated amorphous silicon carbide (α-SiC: H), and the i layer 136 is made of α-Si: H. The n-type layer 134 is electrically connected to the pixel electrode 114 that is not covered by the shield element 130. As another example, it is also possible to use a photoconductive layer 132 composed of a p-type layer, an i-layer, and an n-type layer in order from the bottom to the top. Thereafter, a transparent conductive layer 140 made of ITO (indium tin oxide) is formed on the photoconductive layer 132, thereby completing the manufacture of the image sensor 100.
図１０を参照する。図１０はこの発明によるイメージセンサー１００の平面図である。イメージセンサーは、半導体基板１０４の上に定められた複数の画素からなる画素マトリックス１４２を含み、画素１０８ごとに画素電極１１４が含まれている。注意すべきは、各画素電極１１４の縁部を覆うシールド素子１３０は平面図では、各画素電極１１４を囲む網状のものに見られる。シールド素子１３０のパターンは画素電極１１４を形成するのと同じフォトマスクで定められるため、シールド素子１３０と画素電極１１４が重なる部分はいずれも面積が同じである。 Please refer to FIG. FIG. 10 is a plan view of the image sensor 100 according to the present invention. The image sensor includes a pixel matrix 142 including a plurality of pixels defined on the semiconductor substrate 104, and a pixel electrode 114 is included for each pixel 108. It should be noted that the shield element 130 covering the edge of each pixel electrode 114 can be seen in a net shape surrounding each pixel electrode 114 in the plan view. Since the pattern of the shield element 130 is determined by the same photomask as that for forming the pixel electrode 114, the area where the shield element 130 and the pixel electrode 114 overlap has the same area.
この発明によるシールド素子１３０の中のシールド電極１２２は接地しているため（図９参照）、その０Ｖ電圧は画素マトリックス１４２外の電圧供給回路から供給してよく、画素マトリックス１４２内のシールド電極１２２では電流が流れない。したがって、シールド電極１２２は電極ギャップＧの表面電位を低くすることで、隣接した画素１０８を電気的に分離することができる。 Since the shield electrode 122 in the shield element 130 according to the present invention is grounded (see FIG. 9), the 0 V voltage may be supplied from a voltage supply circuit outside the pixel matrix 142, and the shield electrode 122 in the pixel matrix 142 may be supplied. Then no current flows. Therefore, the shield electrode 122 can electrically isolate adjacent pixels 108 by lowering the surface potential of the electrode gap G.
図１１を参照する。図１１は図１に示す従来のイメージセンサー１０と、図９に示すこの発明によるイメージセンサー１００の電位を表す説明図である。隣接した画素電極の電位をそれぞれ低電位ＶＬ（例えば１．２Ｖ）及び高電位ＶＨ（例えば２．６Ｖ）にすれば、従来のイメージセンサー１０では、画素電極間１８ａ、１８ｂのギャップ領域には電位障壁が形成されない（もしくは低い障壁しか形成されない）。したがって、ｉレイヤー２４からの電子は高電位の画素電極１８ｂから低電位の画素電極１８ａへ移動し、それによりクロストークが発生する（図２参照）。それに反して、図９に示す本発明によるイメージセンサー１００では、図１１に示すように、隣接した画素電極１１４がそれぞれ高電位ＶＨと低電位ＶＬになっても、電極ギャップＧには大きな電位障壁が形成されるため、クロストークは発生しない。 Please refer to FIG. FIG. 11 is an explanatory diagram showing potentials of the conventional image sensor 10 shown in FIG. 1 and the image sensor 100 according to the present invention shown in FIG. If the potentials of adjacent pixel electrodes are set to a low potential VL (for example, 1.2 V) and a high potential VH (for example, 2.6 V), respectively, in the conventional image sensor 10, a potential is applied to the gap region between the pixel electrodes 18a and 18b. No barrier is formed (or only a low barrier is formed). Therefore, the electrons from the i layer 24 move from the high potential pixel electrode 18b to the low potential pixel electrode 18a, thereby generating crosstalk (see FIG. 2). On the other hand, in the image sensor 100 according to the present invention shown in FIG. 9, even if the adjacent pixel electrodes 114 become the high potential VH and the low potential VL, respectively, as shown in FIG. Therefore, crosstalk does not occur.
図１２を参照する。図１２は図９に示すイメージセンサー１００の隣接画素１０８間の電位を示す模擬図である。図１２に示すように、隣接した画素電極１１４がそれぞれ高電位ＶＨと低電位ＶＬになった場合でも、電流は高電位の画素電極１１４から低電位の画素電極１１４へ流れないため、クロストークは生じない。 Please refer to FIG. FIG. 12 is a simulation diagram showing a potential between adjacent pixels 108 of the image sensor 100 shown in FIG. As shown in FIG. 12, even when adjacent pixel electrodes 114 are at a high potential VH and a low potential VL, current does not flow from the high potential pixel electrode 114 to the low potential pixel electrode 114. Does not occur.
以上はこの発明に好ましい実施例であって、この発明の実施の範囲を限定するものではない。よって、当業者のなし得る修正、もしくは変更であって、この発明の意図の下においてなされ、この発明に対して均等の効果を有するものは、いずれもこの発明の特許請求の範囲に属するものとする。 The above is a preferred embodiment of the present invention and does not limit the scope of the present invention. Therefore, any modifications or changes that can be made by those skilled in the art, which are made under the intention of the present invention and have an equivalent effect on the present invention, shall belong to the scope of the claims of the present invention. To do.
この発明は従来のイメージセンサーにシールド素子を付加することを内容とする。かかる構造は実施可能である。 The present invention is characterized in that a shield element is added to a conventional image sensor. Such a structure is feasible.
１０ イメージセンサー
１００ イメージセンサー
１２ 基板
１４ａ 画素
１４ｂ 画素
１０８ 画素
１６ 誘電層
１０６ 誘電層
１８ａ 画素電極
１８ｂ 画素電極
１１４ 画素電極
２０ 光伝導層
１３２ 光伝導層
２２ ｎ型レイヤー
１３４ ｎ型レイヤー
２４ ｉレイヤー
１３６ ｉレイヤー
２６ ｐ型レイヤー
１３８ ｐ型レイヤー
２８ 透明導電層
１４０ 透明導電層
１０２ 半導体チップ
１０４ 半導体基板
１１０ 画素回路
１１２ 第一誘電層
１１６ 第一絶縁層
１１６’ エッチング後の第一絶縁層
１１８ 第二導電層
１２０ 相補パターン
１２２ シールド電極
１２４ コンタクトホール
１２６ 第二絶縁層
１２６’ エッチング後の第二絶縁層
１２８ 絶縁構造
１３０ シールド素子
Ｇ 電極ギャップ
10 image sensor 100 image sensor 12 substrate 14a pixel 14b pixel 108 pixel 16 dielectric layer 106 dielectric layer 18a pixel electrode 18b pixel electrode 114 pixel electrode 20 photoconductive layer 132 photoconductive layer 22 n-type layer 134 n-type layer 24 i-layer 136 i Layer 26 p-type layer 138 p-type layer 28 transparent conductive layer 140 transparent conductive layer 102 semiconductor chip 104 semiconductor substrate 110 pixel circuit 112 first dielectric layer 116 first insulating layer 116 ′ first insulating layer 118 after etching second conductive layer 120 Complementary pattern 122 Shield electrode 124 Contact hole 126 Second insulating layer 126 ′ Second insulating layer 128 after etching Insulating structure 130 Shield element G Electrode gap
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| CN112397540A (en) * | 2020-11-13 | 2021-02-23 | 武汉新芯集成电路制造有限公司 | Backside illuminated image sensor and method of manufacturing the same |
| CN112397540B (en) * | 2020-11-13 | 2023-12-22 | 武汉新芯集成电路制造有限公司 | Backside illuminated image sensor and method of manufacturing the same |
| CN114784030A (en) * | 2022-04-20 | 2022-07-22 | 上海华力微电子有限公司 | Method for manufacturing image sensor |
| CN114784030B (en) * | 2022-04-20 | 2024-05-03 | 上海华力微电子有限公司 | Image sensor manufacturing method |
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