JP2008257044A - Solder resist composition and cured product thereof - Google Patents
Solder resist composition and cured product thereof Download PDFInfo
- Publication number
- JP2008257044A JP2008257044A JP2007100684A JP2007100684A JP2008257044A JP 2008257044 A JP2008257044 A JP 2008257044A JP 2007100684 A JP2007100684 A JP 2007100684A JP 2007100684 A JP2007100684 A JP 2007100684A JP 2008257044 A JP2008257044 A JP 2008257044A
- Authority
- JP
- Japan
- Prior art keywords
- solder resist
- epoxy
- molecule
- reacting
- photosensitive resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 51
- 229910000679 solder Inorganic materials 0.000 title claims abstract description 50
- 230000009477 glass transition Effects 0.000 claims abstract description 16
- 238000003860 storage Methods 0.000 claims abstract description 10
- 229920005989 resin Polymers 0.000 claims description 50
- 239000011347 resin Substances 0.000 claims description 50
- 150000001875 compounds Chemical class 0.000 claims description 45
- 239000004593 Epoxy Substances 0.000 claims description 40
- 150000008065 acid anhydrides Chemical class 0.000 claims description 33
- 125000003700 epoxy group Chemical group 0.000 claims description 26
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 24
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 23
- 150000007519 polyprotic acids Polymers 0.000 claims description 22
- 150000002762 monocarboxylic acid derivatives Chemical class 0.000 claims description 21
- 239000000047 product Substances 0.000 claims description 15
- 238000004132 cross linking Methods 0.000 claims description 11
- 239000007795 chemical reaction product Substances 0.000 claims description 10
- 239000003085 diluting agent Substances 0.000 claims description 10
- 239000003086 colorant Substances 0.000 claims description 9
- 239000003999 initiator Substances 0.000 claims description 9
- 230000001476 alcoholic effect Effects 0.000 claims description 8
- 239000000758 substrate Substances 0.000 abstract description 34
- 238000007747 plating Methods 0.000 abstract description 3
- 239000003822 epoxy resin Substances 0.000 description 34
- 229920000647 polyepoxide Polymers 0.000 description 34
- -1 isocyanate compound Chemical group 0.000 description 28
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 27
- 238000000576 coating method Methods 0.000 description 23
- 239000000049 pigment Substances 0.000 description 21
- 239000011248 coating agent Substances 0.000 description 19
- 229920003986 novolac Polymers 0.000 description 19
- 239000000126 substance Substances 0.000 description 19
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 15
- 238000001723 curing Methods 0.000 description 13
- 238000001035 drying Methods 0.000 description 13
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 10
- 238000003786 synthesis reaction Methods 0.000 description 10
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 9
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 9
- 239000003960 organic solvent Substances 0.000 description 9
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 8
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 7
- 239000007864 aqueous solution Substances 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 7
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- 239000000463 material Substances 0.000 description 7
- 238000002156 mixing Methods 0.000 description 7
- 238000007650 screen-printing Methods 0.000 description 7
- 239000007921 spray Substances 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- YCCILVSKPBXVIP-UHFFFAOYSA-N 2-(4-hydroxyphenyl)ethanol Chemical compound OCCC1=CC=C(O)C=C1 YCCILVSKPBXVIP-UHFFFAOYSA-N 0.000 description 6
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 6
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 6
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 6
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 6
- 239000002253 acid Substances 0.000 description 6
- 238000011161 development Methods 0.000 description 6
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- 239000000178 monomer Substances 0.000 description 6
- 239000011734 sodium Substances 0.000 description 6
- 229920001187 thermosetting polymer Polymers 0.000 description 6
- 239000002966 varnish Substances 0.000 description 6
- KMOUUZVZFBCRAM-OLQVQODUSA-N (3as,7ar)-3a,4,7,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1C=CC[C@@H]2C(=O)OC(=O)[C@@H]21 KMOUUZVZFBCRAM-OLQVQODUSA-N 0.000 description 5
- FPZWZCWUIYYYBU-UHFFFAOYSA-N 2-(2-ethoxyethoxy)ethyl acetate Chemical compound CCOCCOCCOC(C)=O FPZWZCWUIYYYBU-UHFFFAOYSA-N 0.000 description 5
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 5
- 239000003054 catalyst Substances 0.000 description 5
- 238000005886 esterification reaction Methods 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 5
- 239000011342 resin composition Substances 0.000 description 5
- 229910052708 sodium Inorganic materials 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 4
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 4
- 239000002585 base Substances 0.000 description 4
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 4
- 238000002845 discoloration Methods 0.000 description 4
- 239000004744 fabric Substances 0.000 description 4
- 239000003112 inhibitor Substances 0.000 description 4
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 4
- 229910052753 mercury Inorganic materials 0.000 description 4
- 239000003208 petroleum Substances 0.000 description 4
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 238000010998 test method Methods 0.000 description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 4
- CNHDIAIOKMXOLK-UHFFFAOYSA-N toluquinol Chemical compound CC1=CC(O)=CC=C1O CNHDIAIOKMXOLK-UHFFFAOYSA-N 0.000 description 4
- PTBDIHRZYDMNKB-UHFFFAOYSA-N 2,2-Bis(hydroxymethyl)propionic acid Chemical compound OCC(C)(CO)C(O)=O PTBDIHRZYDMNKB-UHFFFAOYSA-N 0.000 description 3
- FALRKNHUBBKYCC-UHFFFAOYSA-N 2-(chloromethyl)pyridine-3-carbonitrile Chemical compound ClCC1=NC=CC=C1C#N FALRKNHUBBKYCC-UHFFFAOYSA-N 0.000 description 3
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- ISAOCJYIOMOJEB-UHFFFAOYSA-N benzoin Chemical compound C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 description 3
- 239000006229 carbon black Substances 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical compound CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 description 3
- VFHVQBAGLAREND-UHFFFAOYSA-N diphenylphosphoryl-(2,4,6-trimethylphenyl)methanone Chemical compound CC1=CC(C)=CC(C)=C1C(=O)P(=O)(C=1C=CC=CC=1)C1=CC=CC=C1 VFHVQBAGLAREND-UHFFFAOYSA-N 0.000 description 3
- 230000032050 esterification Effects 0.000 description 3
- 238000007667 floating Methods 0.000 description 3
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 3
- 229910001507 metal halide Inorganic materials 0.000 description 3
- 150000005309 metal halides Chemical class 0.000 description 3
- NWVVVBRKAWDGAB-UHFFFAOYSA-N p-methoxyphenol Chemical compound COC1=CC=C(O)C=C1 NWVVVBRKAWDGAB-UHFFFAOYSA-N 0.000 description 3
- 150000002989 phenols Chemical class 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 239000011973 solid acid Substances 0.000 description 3
- 229940014800 succinic anhydride Drugs 0.000 description 3
- MUTGBJKUEZFXGO-OLQVQODUSA-N (3as,7ar)-3a,4,5,6,7,7a-hexahydro-2-benzofuran-1,3-dione Chemical compound C1CCC[C@@H]2C(=O)OC(=O)[C@@H]21 MUTGBJKUEZFXGO-OLQVQODUSA-N 0.000 description 2
- AUHZEENZYGFFBQ-UHFFFAOYSA-N 1,3,5-trimethylbenzene Chemical compound CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 2
- YXIWHUQXZSMYRE-UHFFFAOYSA-N 1,3-benzothiazole-2-thiol Chemical compound C1=CC=C2SC(S)=NC2=C1 YXIWHUQXZSMYRE-UHFFFAOYSA-N 0.000 description 2
- JVYDLYGCSIHCMR-UHFFFAOYSA-N 2,2-bis(hydroxymethyl)butanoic acid Chemical compound CCC(CO)(CO)C(O)=O JVYDLYGCSIHCMR-UHFFFAOYSA-N 0.000 description 2
- HHOJVZAEHZGDRB-UHFFFAOYSA-N 2-(4,6-diamino-1,3,5-triazin-2-yl)ethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCC1=NC(N)=NC(N)=N1 HHOJVZAEHZGDRB-UHFFFAOYSA-N 0.000 description 2
- UHFFVFAKEGKNAQ-UHFFFAOYSA-N 2-benzyl-2-(dimethylamino)-1-(4-morpholin-4-ylphenyl)butan-1-one Chemical compound C=1C=C(N2CCOCC2)C=CC=1C(=O)C(CC)(N(C)C)CC1=CC=CC=C1 UHFFVFAKEGKNAQ-UHFFFAOYSA-N 0.000 description 2
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- 125000003118 aryl group Chemical group 0.000 description 1
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- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
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- KXHPPCXNWTUNSB-UHFFFAOYSA-M benzyl(trimethyl)azanium;chloride Chemical compound [Cl-].C[N+](C)(C)CC1=CC=CC=C1 KXHPPCXNWTUNSB-UHFFFAOYSA-M 0.000 description 1
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
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- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920001228 polyisocyanate Polymers 0.000 description 1
- 239000005056 polyisocyanate Substances 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical class COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
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- 150000003839 salts Chemical class 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
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- 229910000162 sodium phosphate Inorganic materials 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
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- 230000001629 suppression Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229920002994 synthetic fiber Polymers 0.000 description 1
- 239000012209 synthetic fiber Substances 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
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- 150000003512 tertiary amines Chemical class 0.000 description 1
- 125000006158 tetracarboxylic acid group Chemical group 0.000 description 1
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- 239000002562 thickening agent Substances 0.000 description 1
- YRHRIQCWCFGUEQ-UHFFFAOYSA-N thioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3SC2=C1 YRHRIQCWCFGUEQ-UHFFFAOYSA-N 0.000 description 1
- LDHQCZJRKDOVOX-UHFFFAOYSA-N trans-crotonic acid Natural products CC=CC(O)=O LDHQCZJRKDOVOX-UHFFFAOYSA-N 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- YFDSDPIBEUFTMI-UHFFFAOYSA-N tribromoethanol Chemical compound OCC(Br)(Br)Br YFDSDPIBEUFTMI-UHFFFAOYSA-N 0.000 description 1
- DWWMSEANWMWMCB-UHFFFAOYSA-N tribromomethylsulfonylbenzene Chemical compound BrC(Br)(Br)S(=O)(=O)C1=CC=CC=C1 DWWMSEANWMWMCB-UHFFFAOYSA-N 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- SRPWOOOHEPICQU-UHFFFAOYSA-N trimellitic anhydride Chemical compound OC(=O)C1=CC=C2C(=O)OC(=O)C2=C1 SRPWOOOHEPICQU-UHFFFAOYSA-N 0.000 description 1
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 description 1
- 230000002087 whitening effect Effects 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 150000003739 xylenols Chemical class 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F290/00—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups
- C08F290/02—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups on to polymers modified by introduction of unsaturated end groups
- C08F290/06—Polymers provided for in subclass C08G
- C08F290/062—Polyethers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/42—Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof
- C08G59/4292—Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof together with monocarboxylic acids
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
- G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0388—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/105—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having substances, e.g. indicators, for forming visible images
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
- H05K3/285—Permanent coating compositions
- H05K3/287—Photosensitive compositions
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Materials For Photolithography (AREA)
- Macromonomer-Based Addition Polymer (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
Abstract
Description
本発明は、プリント配線板、モジュール基板の製造に有用なソルダーレジスト組成物、およびその硬化物に関するものである。さらに詳しくは、本発明は、ソルダーレジスト、モジュール基板用レジストとして必要な性能を維持しつつ、薄板化が進む基板における反りの発生を抑制することができるソルダーレジスト組成物、およびその硬化物に関するものである。 The present invention relates to a printed wiring board, a solder resist composition useful for manufacturing a module substrate, and a cured product thereof. More specifically, the present invention relates to a solder resist composition that can suppress the occurrence of warpage in a substrate that is becoming thinner while maintaining the performance required as a solder resist and a module substrate resist, and a cured product thereof. It is.
最近の半導体部品の急速な進歩により、電子機器は小型軽量化、高性能化、多機能化の傾向にあり、これらに追従してプリント配線板の高密度化が進みつつある。また、このようなプリント配線板やパッケージ基板、モジュール基板に用いられる基材は薄板の基材が増えてきている。 Due to recent rapid advances in semiconductor components, electronic devices are becoming smaller, lighter, higher performance, and multifunctional, and the printed wiring board is becoming increasingly dense following these trends. Moreover, the base material used for such a printed wiring board, a package board | substrate, and a module board has increased the base material of a thin plate.
一般に広く普及しているソルダーレジスト組成物としては、ノボラック型エポキシ化合物と不飽和モノカルボン酸との反応物に多塩基酸無水物を反応させて得られる感光性樹脂、光重合開始剤、希釈剤、及びエポキシ化合物からなる光硬化性及び熱硬化性の液状レジストインキ組成物が開示されている(例えば、特許文献1を参照)。また、硬化収縮の少ない組成物としては、例えば、1分子中に少なくとも1個のカルボキシル基および2個の水酸基を有する化合物と、ジオール化合物と、ポリイソシアネート化合物との反応物の末端イソシアネート化合物に、1分子中に重合性不飽和基、カルボキシル基および少なくとも1個の水酸基を有する化合物を反応させて得られた感光性樹脂組成物が提案されている(例えば、特許文献2を参照)。 Solder resist compositions that are widely used in general include photosensitive resins, photopolymerization initiators, and diluents obtained by reacting a reaction product of a novolak type epoxy compound and an unsaturated monocarboxylic acid with a polybasic acid anhydride. And a photocurable and thermosetting liquid resist ink composition comprising an epoxy compound (see, for example, Patent Document 1). Moreover, as a composition with little curing shrinkage, for example, a terminal isocyanate compound as a reaction product of a compound having at least one carboxyl group and two hydroxyl groups in one molecule, a diol compound, and a polyisocyanate compound, A photosensitive resin composition obtained by reacting a compound having a polymerizable unsaturated group, a carboxyl group and at least one hydroxyl group in one molecule has been proposed (see, for example, Patent Document 2).
しかしながら、このような硬化収縮の少ない感光性樹脂組成物では、ソルダーレジストとして必要な耐熱性に不足しているという問題があった。 However, such a photosensitive resin composition with little curing shrinkage has a problem that it lacks the heat resistance necessary as a solder resist.
また、最近、基板の回路を見えにくくしたり、反射率を高めたい等の理由から黒色または白色のソルダーレジスト組成物の要求も増えてきている。しかしながら黒色または白色は光の透過が悪いため、このような組成物では露光のための光量を多くする必要があり、塗膜表層の架橋が深部に比べ架橋過多になり、反りを抑えることが困難であった。
本発明は、かかる背景技術が抱える問題点に鑑み開発されたものであり、その目的は、プリント配線板、パッケージ基板、モジュール基板に用いられるソルダーレジストとして必要な現像性、解像性、耐熱性、めっき耐性に優れ、且つ硬化収縮が少なく反りの無い基板を提供できるソルダーレジスト組成物、及びその硬化物を提供することにある。 The present invention was developed in view of the problems of the background art, and the purpose thereof is developability, resolution, and heat resistance required as a solder resist for use in printed wiring boards, package substrates, and module substrates. An object of the present invention is to provide a solder resist composition that is excellent in plating resistance and that can provide a substrate with little curing shrinkage and no warpage, and a cured product thereof.
本発明者等は鋭意研究した結果、硬化収縮が少なく反りの少ない基板を提供する為に、ソルダーレジスト組成物の硬化後のガラス転移温度(Tg)と架橋密度が技術的に密接な関連性を有することを見出し、本発明を完成するに至った。 As a result of intensive studies, the present inventors have found that the glass transition temperature (Tg) after curing of the solder resist composition and the crosslinking density are technically closely related in order to provide a substrate with less curing shrinkage and less warpage. As a result, the present invention has been completed.
すなわち、本発明の一態様として、式(1)により算出される硬化後の架橋密度が2×103〜1.2×104mol/m3であり、且つガラス転移温度(Tg)が100℃以上であるソルダーレジスト組成物が提供される。 That is, as one embodiment of the present invention, the crosslink density after curing calculated by the formula (1) is 2 × 10 3 to 1.2 × 10 4 mol / m 3 and the glass transition temperature (Tg) is 100. A solder resist composition that is at or above ° C is provided.
n=E’min/3ΦRT (1)
式中、nは架橋密度、E’minは貯蔵弾性率E’の最小値、Φはフロント係数≒1、Rは気体定数、TはE’minの絶対温度を表わす。
n = E'min / 3ΦRT (1)
In the formula, n represents the crosslink density, E′min represents the minimum value of the storage elastic modulus E ′, Φ represents the front coefficient≈1, R represents the gas constant, and T represents the absolute temperature of E′min.
また他の態様として、(A−1)1分子中に2個以上のエポキシ基を有するエポキシ化合物(a)と、1分子中に1個以上のアルコール性水酸基とエポキシ基と反応する1個の反応基を有する化合物(b)と、不飽和モノカルボン酸(c)とを反応させ、得られた反応生成物に多塩基酸無水物(d)を反応させて得られるカルボキシル基含有感光性樹脂、(A−2)ノボラック型エポキシ化合物と不飽和モノカルボン酸とのエステル化物の水酸基に多塩基酸無水物を反応させて得られる感光性樹脂、(B)光重合開始剤、(C)希釈剤、及び(D)1分子中に少なくとも2個のエポキシ基を有する多官能エポキシ化合物、を含有するソルダーレジスト組成物が提供される。 As another embodiment, (A-1) one epoxy compound (a) having two or more epoxy groups in one molecule and one or more alcoholic hydroxyl groups and one epoxy group in one molecule are reacted. A carboxyl group-containing photosensitive resin obtained by reacting a compound (b) having a reactive group with an unsaturated monocarboxylic acid (c) and reacting the resulting reaction product with a polybasic acid anhydride (d). (A-2) a photosensitive resin obtained by reacting a polybasic acid anhydride with a hydroxyl group of an esterified product of a novolak-type epoxy compound and an unsaturated monocarboxylic acid, (B) a photopolymerization initiator, (C) dilution There is provided a solder resist composition containing an agent and (D) a polyfunctional epoxy compound having at least two epoxy groups in one molecule.
さらに前記組成物に加えて白色または黒色の着色剤を含有するソルダーレジスト組成物が提供される。 Furthermore, the soldering resist composition containing a white or black coloring agent in addition to the said composition is provided.
また、本発明の他の態様として、上記式(1)により算出される架橋密度が2×103〜1.2×104mol/m3であり、且つガラス転移温度が100℃以上である硬化物からなることを特徴とするソルダーレジスト層が提供される。 As another aspect of the present invention, the crosslinking density calculated by the above formula (1) is 2 × 10 3 to 1.2 × 10 4 mol / m 3 and the glass transition temperature is 100 ° C. or higher. A solder resist layer comprising a cured product is provided.
さらに、他の態様として、上記ソルダーレジスト層を有するプリント配線板が提供される。 Furthermore, the printed wiring board which has the said soldering resist layer as another aspect is provided.
本発明に係るソルダーレジスト組成物は、現像性、解像性、耐熱性、めっき耐性に優れ、且つ硬化収縮が少ないため、薄板化が進むプリント配線板やモジュール基板に用いられるソルダーレジストとして使用されることにより、反りの無い基板を提供することができる。 The solder resist composition according to the present invention is excellent as developability, resolution, heat resistance, plating resistance, and less curing shrinkage. Therefore, it is used as a solder resist used for printed wiring boards and module substrates that are becoming thinner. Thus, a substrate without warping can be provided.
本発明者らは、優れた耐熱性と反りの少ないソルダーレジスト層を得るために、硬化後の架橋密度とガラス転移温度(Tg)が技術的に密接な関係を有するとの知見に基づき完成されたものである。つまり硬化後の架橋密度が、2×103〜1.2×104mol/m3であり、且つガラス転移温度(Tg)が100℃以上であるソルダーレジスト組成物が、優れた耐熱性と反りの少ないソルダーレジスト層を得るために有効であることを見出した。 In order to obtain a solder resist layer having excellent heat resistance and low warpage, the present inventors have completed the cross-linking density after curing and the glass transition temperature (Tg) based on the knowledge that they have a technically close relationship. It is a thing. In other words, the solder resist composition having a crosslink density after curing of 2 × 10 3 to 1.2 × 10 4 mol / m 3 and a glass transition temperature (Tg) of 100 ° C. or higher has excellent heat resistance and It has been found that it is effective for obtaining a solder resist layer with little warpage.
硬化後の架橋密度が、2×103〜1.2×104mol/m3であり、且つガラス転移温度(Tg)が100℃以上であるソルダーレジスト組成物としては、特に限定はないが、カルボン酸含有樹脂として、光硬化性に劣るがそりが少なく、耐熱性,PCT耐性に優れたカルボキシル基含有感光性樹脂(A−1)と、光硬化性に優れているがそりの多い耐熱性に優れたカルボキシル基含有感光性樹脂(A−2)を併用することが、上記課題を解決するために特に有効であることを見出した。白色または黒色のソルダーレジストの場合は、前述したように解像姓を得るために、露光量を増やす必要があり、特にこの樹脂の併用が有効である。 The solder resist composition having a crosslinking density after curing of 2 × 10 3 to 1.2 × 10 4 mol / m 3 and a glass transition temperature (Tg) of 100 ° C. or higher is not particularly limited. As a carboxylic acid-containing resin, a carboxyl group-containing photosensitive resin (A-1) that is inferior in photocurability but less warped, has excellent heat resistance and PCT resistance, and heat resistance that is excellent in photocurability but has a large amount of warpage It has been found that it is particularly effective to use a carboxyl group-containing photosensitive resin (A-2) having excellent properties in order to solve the above problems. In the case of a white or black solder resist, it is necessary to increase the exposure amount in order to obtain a resolution as described above, and the combined use of this resin is particularly effective.
以下に本発明のソルダーレジスト組成物の各成分について詳細に説明する。 Below, each component of the soldering resist composition of this invention is demonstrated in detail.
カルボキシル基含有感光性樹脂(A−1)としては、1分子中に2個以上のエポキシ基を有するエポキシ化合物(a)と、1分子中に1個以上のアルコール性水酸基とエポキシ基と反応する1個の反応基を有する化合物(b)と、不飽和モノカルボン酸(c)とを反応させ、得られた反応生成物に多塩基酸無水物(d)を反応させて得られるカルボキシル基含有感光性樹脂である。 The carboxyl group-containing photosensitive resin (A-1) reacts with an epoxy compound (a) having two or more epoxy groups in one molecule, and one or more alcoholic hydroxyl groups and epoxy groups in one molecule. Carboxylic group-containing compound obtained by reacting compound (b) having one reactive group with unsaturated monocarboxylic acid (c) and reacting the resulting reaction product with polybasic acid anhydride (d) It is a photosensitive resin.
1分子中に2個以上のエポキシ基を有するエポキシ化合物(a)としては、公知慣用の多官能エポキシ化合物、例えばビスフェノールA型エポキシ樹脂、ビスフェノールF型エポキシ樹脂、ビスフェノールS型エポキシ樹脂、ビフェニール型エポキシ樹脂、ビキシレノール型エポキシ樹脂、トリスヒドロキシフェニルメタン型エポキシ樹脂、テトラフェニルエタン型エポキシ樹脂、フェノールノボラック型エポキシ樹脂、クレゾールノボラック型エポキシ樹脂、ビスフェノールAのノボラック型エポキシ樹脂、グリシジル(メタ)アクリレートの共重合樹脂などが挙げられる。これらの中で、得られた樹脂の耐熱性、感光性の面から、フェノールノボラック型エポキシ樹脂、又はクレゾールノボラック型エポキシ樹脂、特に軟化点が50℃以上のクレゾールノボラック型エポキシ樹脂を用いることが好ましい。 Examples of the epoxy compound (a) having two or more epoxy groups in one molecule include known and commonly used polyfunctional epoxy compounds such as bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, and biphenyl type epoxy. Resin, bixylenol type epoxy resin, trishydroxyphenylmethane type epoxy resin, tetraphenylethane type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, bisphenol A novolak type epoxy resin, glycidyl (meth) acrylate Polymerized resin and the like can be mentioned. Among these, from the viewpoint of heat resistance and photosensitivity of the obtained resin, it is preferable to use a phenol novolac type epoxy resin or a cresol novolac type epoxy resin, particularly a cresol novolak type epoxy resin having a softening point of 50 ° C. or more. .
本発明のカルボキシル基含有感光性樹脂(A−1)の特徴である1分子中に1個以上のアルコール性水酸基とエポキシ基と反応する1個の反応基を有する化合物(b)としては、例えば、グリコール酸、ジメチロール酢酸、ジメチロールプロピオン酸、ジメチロールブタン酸、ジメチロール吉草酸、ジメチロールカプロン酸等のヒドロキシ含有モノカルボン酸類;ジエタノールアミン、ジイソプロパノールアミン等のジアルカノールアミン類等;ヒドロキシメチル−ジ−t−ブチルフェノール、p−ヒドロキシフェネチルアルコール、p−ヒドロキシフェニル−3−プロパノール、p−ヒドロキシフェニル−4−ブタノール、ヒドロキシエチルクレゾール、2,6−ジメチル−4−ヒドロキシメチルフェノール、2,4−ジヒドロキシメチル−2−シクロヘキシルフェノール、トリメチロールフェノール、3,5−ジメチル−2,4,6−トリヒドロキシメチルフェノール、ビス(ヒドロキシメチル)フェノール、ビス(ヒドロキシメチル)クレゾールなどのビス(ヒドロキシアルキル)フェノール類を挙げることができる。特に好ましいものは、ジメチロールプロピオン酸、ジメチロールブタン酸、及びp−ヒドロキシフェネチルアルコールである。 As the compound (b) having one reactive group that reacts with one or more alcoholic hydroxyl groups and an epoxy group in one molecule, which is a feature of the carboxyl group-containing photosensitive resin (A-1) of the present invention, for example, Hydroxy-containing monocarboxylic acids such as glycolic acid, dimethylolacetic acid, dimethylolpropionic acid, dimethylolbutanoic acid, dimethylolvaleric acid, dimethylolcaproic acid; dialkanolamines such as diethanolamine and diisopropanolamine; hydroxymethyl-di -T-butylphenol, p-hydroxyphenethyl alcohol, p-hydroxyphenyl-3-propanol, p-hydroxyphenyl-4-butanol, hydroxyethylcresol, 2,6-dimethyl-4-hydroxymethylphenol, 2,4-dihydroxy Methyl Bis (hydroxyalkyl) phenols such as 2-cyclohexylphenol, trimethylolphenol, 3,5-dimethyl-2,4,6-trihydroxymethylphenol, bis (hydroxymethyl) phenol, bis (hydroxymethyl) cresol be able to. Particularly preferred are dimethylolpropionic acid, dimethylolbutanoic acid, and p-hydroxyphenethyl alcohol.
このような化合物は、一級の水酸基を持つことから、エポキシ基と不飽和モノカルボン酸の反応で得られる二級の水酸基に比べ、この後、付加させる多塩基酸無水物(d)が、高温高湿下でも、外れ難くなる。 Since such a compound has a primary hydroxyl group, the polybasic acid anhydride (d) to be added thereafter is higher in temperature than the secondary hydroxyl group obtained by the reaction of an epoxy group and an unsaturated monocarboxylic acid. It becomes difficult to come off even under high humidity.
本発明のカルボキシル基含有感光性樹脂(A−1)の合成に用いられる不飽和モノカルボン酸(c)としては、アクリル酸、メタアクリル酸、クロトン酸、ビニル酢酸、或いは、2−ヒドロキシエチル(メタ)アクリレート、2−ヒドロキシプロピル(メタ)アクリレート、4−ヒドロキシブチル(メタ)アクリレート、トリメチロールプロパンジ(メタ)アクリレート、ペンタエリスリトールトリ(メタ)アクリレートなどのヒドロキシル基含有の(メタ)アクリレート化合物に、二塩基酸無水物を付加した化合物などが挙げられる。これらの中で、アクリル酸、又はメタアクリル酸が反応性等の面から、好ましい。これら不飽和モノカルボン酸は単独で又は2種以上を組み合わせて用いることもできる。 As unsaturated monocarboxylic acid (c) used for the synthesis | combination of the carboxyl group-containing photosensitive resin (A-1) of this invention, acrylic acid, methacrylic acid, crotonic acid, vinyl acetic acid, or 2-hydroxyethyl ( For hydroxyl group-containing (meth) acrylate compounds such as (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, trimethylolpropane di (meth) acrylate and pentaerythritol tri (meth) acrylate And a compound to which a dibasic acid anhydride is added. Among these, acrylic acid or methacrylic acid is preferable from the viewpoint of reactivity and the like. These unsaturated monocarboxylic acids can be used alone or in combination of two or more.
上記1分子中に1個以上のアルコール性水酸基とエポキシ基と反応する1個の反応基を有する化合物(b)と不飽和モノカルボン酸(c)の総量は、前記1分子中に2個以上のエポキシ基を有するエポキシ化合物(a)のエポキシ基1当量に対して、好ましくは0.8〜1.3当量、より好ましくは0.9〜1.1当量となる範囲である。上記範囲より少ない場合、この後付加する多塩基酸無水物から誘導される遊離カルボキシル基と反応するなど、保存安定性や分子量の増大に繋がるので好ましくない。一方、上記範囲を超えた場合、臭気が強くなったり、塗膜特性が低下するので好ましくない。 The total amount of the compound (b) having one reactive group that reacts with one or more alcoholic hydroxyl groups and an epoxy group in one molecule and the unsaturated monocarboxylic acid (c) is two or more in one molecule. Preferably it is 0.8-1.3 equivalent with respect to 1 equivalent of epoxy groups of the epoxy compound (a) which has an epoxy group, More preferably, it is the range used as 0.9-1.1 equivalent. When the amount is less than the above range, it is not preferable because it leads to an increase in storage stability and molecular weight such as reaction with a free carboxyl group derived from a polybasic acid anhydride to be added thereafter. On the other hand, when the above range is exceeded, the odor becomes strong and the coating film properties deteriorate, which is not preferable.
また、前記1分子中に1個以上のアルコール性水酸基とエポキシ基と反応する1個の反応基を有する化合物(b)と不飽和モノカルボン酸(c)の組み合わせる割合は、(b):(c)が、0.05:0.95〜0.5:0.5のとなる範囲が好ましい。前記(b)成分の割合が、前記範囲より少なくなると、エポキシ基と(c)成分の反応で得られた二級水酸基に、後述の多塩基酸無水物(d)が付加するため、高温高湿下での安定性が低下するので好ましくない。一方、前記(b)成分の割合が、前記範囲より多くなると、感光性の不飽和基の導入量が減少し、耐現像性が得られ難くなり、好ましくない。 The ratio of the compound (b) having one reactive group that reacts with one or more alcoholic hydroxyl groups and an epoxy group in one molecule and the unsaturated monocarboxylic acid (c) is as follows: (b) :( The range in which c) is 0.05: 0.95 to 0.5: 0.5 is preferred. When the proportion of the component (b) is less than the above range, the polybasic acid anhydride (d) described later is added to the secondary hydroxyl group obtained by the reaction of the epoxy group and the component (c). This is not preferable because the stability under humidity decreases. On the other hand, when the proportion of the component (b) is more than the above range, the amount of photosensitive unsaturated groups introduced is decreased, and it becomes difficult to obtain development resistance, which is not preferable.
本発明のカルボキシル基含有感光性樹脂(A−1)の合成に用いられる多塩基酸無水物(d)としては、無水フタル酸、テトラヒドロ無水フタル酸、メチルテトラヒドロ無水フタル酸、ヘキサヒドロ無水フタル酸、メチルヘキサヒドロ無水フタル酸、無水コハク酸、無水マレイン酸、無水イタコン酸、無水ナジック酸、オクテニル無水コハク酸、ペンタドデセニル無水コハク酸、3,6−エンドメチレンテトラヒドロ無水フタル酸、メチルエンドメチレンテトラヒドロ無水フタル酸、テトラブロモ無水フタル酸、無水トリメリット酸等の二塩基酸又は三塩基酸の無水物、或いはビフェニルテトラカルボン酸二無水物、ジフェニルエーテルテトラカルボン酸二無水物、ブタンテトラカルボン酸二無水物、シクロペンタンテトラカルボン酸二無水物、無水ピロメリット酸、ベンゾフェノンテトラカルボン酸二無水物等の脂肪族あるいは芳香族四塩基酸二無水物が挙げられ、これらのうち1種又は2種以上を使用することができる。これらの中で、テトラヒドロ無水フタル酸、メチルテトラヒドロ無水フタル酸、ヘキサヒドロ無水フタル酸、メチルヘキサヒドロ無水フタル酸、無水コハク酸が、現像性、硬化物の塗膜特性の面から、好ましい。 As the polybasic acid anhydride (d) used for the synthesis of the carboxyl group-containing photosensitive resin (A-1) of the present invention, phthalic anhydride, tetrahydrophthalic anhydride, methyltetrahydrophthalic anhydride, hexahydrophthalic anhydride, Methylhexahydrophthalic anhydride, succinic anhydride, maleic anhydride, itaconic anhydride, nadic anhydride, octenyl succinic anhydride, pentadodecenyl succinic anhydride, 3,6-endomethylenetetrahydrophthalic anhydride, methylendomethylenetetrahydrophthalic anhydride Dibasic acid or tribasic acid anhydride such as acid, tetrabromophthalic anhydride, trimellitic anhydride, or biphenyltetracarboxylic dianhydride, diphenyl ether tetracarboxylic dianhydride, butanetetracarboxylic dianhydride, cyclo Pentanetetracarboxylic dianhydride , Pyromellitic acid anhydride, aliphatic or aromatic tetracarboxylic acid dianhydride such as benzophenone tetracarboxylic acid dianhydride and the like, can be used one or two or more of these. Among these, tetrahydrophthalic anhydride, methyltetrahydrophthalic anhydride, hexahydrophthalic anhydride, methylhexahydrophthalic anhydride, and succinic anhydride are preferable from the viewpoints of developability and coating properties of the cured product.
これら多塩基酸無水物(d)の付加量は、本発明で用いられるカルボキシル基含有感光性樹脂(A)の酸価が、好ましくは30〜120mgKOH/gとなる範囲、より好ましくは40〜100mgKOH/gとなる範囲である。酸価が上記範囲より少なくなるように、多塩基酸無水物(d)を付加した場合、希アルカリ水溶液による現像性が低下したり、耐熱性が低下するので、好ましくない。一方、上記範囲より高くなるように、多塩基酸無水物(d)を付加した場合、耐現像性が低下したり、電気絶縁性、無電解めっき耐性等が低下するのに加え、熱硬化により発生する応力が大きくなるので、好ましくない。 The addition amount of these polybasic acid anhydrides (d) is such that the acid value of the carboxyl group-containing photosensitive resin (A) used in the present invention is preferably in the range of 30 to 120 mgKOH / g, more preferably 40 to 100 mgKOH. / G. When the polybasic acid anhydride (d) is added so that the acid value is less than the above range, the developability with a dilute aqueous alkali solution or the heat resistance decreases, which is not preferable. On the other hand, when the polybasic acid anhydride (d) is added so as to be higher than the above range, the development resistance is lowered, the electrical insulation property, the electroless plating resistance and the like are lowered, and also by thermosetting. Since the generated stress increases, it is not preferable.
次に、(A−2)感光性樹脂について説明する。
感光性樹脂(A−2)は、ノボラック型エポキシ化合物(e)と不飽和モノカルボン酸(c)とのエステル化物の水酸基に多塩基酸無水物(d)を反応させて得られる感光性樹脂であり、これを更に詳細に説明すると、(e)ノボラック型エポキシ化合物のエポキシ基と(c)不飽和モノカルボン酸のカルボキシル基をエステル化反応(全エステル化又は部分エステル化、好ましくは全エステル化)させ、生成した水酸基にさらに(d)飽和又は不飽和の多塩基酸無水物を反応させて得られたものである。
Next, (A-2) Photosensitive resin will be described.
Photosensitive resin (A-2) is a photosensitive resin obtained by reacting a polybasic acid anhydride (d) with a hydroxyl group of an esterified product of a novolak epoxy compound (e) and an unsaturated monocarboxylic acid (c). This will be described in more detail. (E) Esterification reaction (total esterification or partial esterification, preferably total ester) of epoxy group of novolak type epoxy compound and (c) carboxyl group of unsaturated monocarboxylic acid And (d) a saturated or unsaturated polybasic acid anhydride is further reacted with the generated hydroxyl group.
ノボラック型エポキシ化合物(e)としては、例えば、フェノール、クレゾール、ハロゲン化フェノール、アルキルフェノール、ビスフェノールAなどのフェノール類とホルムアルデヒドとを酸性触媒下で反応させて得られるノボラック類に、エピクロルヒドリン、メチルエピクロルヒドリン等のエピハロヒドリンを反応させて得られるものが挙げられる。市販品としては、東都化成(株)製YDCN−701、YDCN−704、YDPN−638、YDPN−602;ダウ・ケミカル社製DEN−431、DEN−439;チバ・スペシャルティー・ケミカルズ社製EPN−1138、EPN−1235、EPN−1299;大日本インキ化学工業(株)製N−730、N−770、N−865、N−665、N−673、N−695、VH−4150、VH−4240、VH−4440;日本化薬(株)製EOCN−120、EOCN−104、BRRN−1020;旭化成工業(株)製ECN−265、ECN−293、ECN−285、ECN−299、などが挙げられる。 Examples of the novolak type epoxy compound (e) include novolaks obtained by reacting phenols such as phenol, cresol, halogenated phenol, alkylphenol, bisphenol A and formaldehyde in the presence of an acidic catalyst, epichlorohydrin, methyl epichlorohydrin, etc. And those obtained by reacting the epihalohydrin. Commercially available products include YDCN-701, YDCN-704, YDPN-638, YDPN-602 manufactured by Tohto Kasei Co., Ltd .; DEN-431, DEN-439 manufactured by Dow Chemical Company; EPN- manufactured by Ciba Specialty Chemicals Company 1138, EPN-1235, EPN-1299; Dainippon Ink & Chemicals, Inc. N-730, N-770, N-865, N-665, N-673, N-695, VH-4150, VH-4240 , VH-4440; Nippon Kayaku Co., Ltd. EOCN-120, EOCN-104, BRRN-1020; Asahi Kasei Kogyo Co., Ltd. ECN-265, ECN-293, ECN-285, ECN-299, etc. .
次に、感光性樹脂(A−2)の合成に用いられる不飽和モノカルボン酸(b)及び飽和又は不飽和の多塩基酸無水物(c)としては、前記感光性樹脂(A−1)で例示したものと同様である。 Next, as the unsaturated monocarboxylic acid (b) and the saturated or unsaturated polybasic acid anhydride (c) used for the synthesis of the photosensitive resin (A-2), the photosensitive resin (A-1) is used. It is the same as that illustrated in.
前記エポキシ化合物と不飽和モノカルボン酸によるエポキシ基のエステル化は、エポキシ基の当量数/カルボキシル基の当量数が好ましくは0.8〜1.3、より好ましくは0.9〜1.1である。 The esterification of the epoxy group with the epoxy compound and the unsaturated monocarboxylic acid is preferably an epoxy group equivalent number / carboxyl group equivalent number of 0.8 to 1.3, more preferably 0.9 to 1.1. is there.
例えば、前記ノボラック型エポキシ 化合物をセロソルブアセテート、カルビトールアセテート、メチルエチルケトンなどの有機溶剤に溶解し、ハイドロキノン、カテコール、ピロガロールなどの熱重合禁止剤及び触媒としてベンジルジメチルアミン、トリエチルアミンなどの3級アミン類あるいはベンジルトリメチルアンモニウムクロライド、ベンジルトリエチルアンモニウムブロマイドなどの4級アンモニウム塩類を加え、前記不飽和モノカルボン酸を混合し、70〜140℃で加熱攪拌下に反応させて得られる。 For example, the novolac type epoxy compound is dissolved in an organic solvent such as cellosolve acetate, carbitol acetate, methyl ethyl ketone and the like, and a thermal polymerization inhibitor such as hydroquinone, catechol, pyrogallol and the like, and tertiary amines such as benzyldimethylamine and triethylamine as catalysts. A quaternary ammonium salt such as benzyltrimethylammonium chloride or benzyltriethylammonium bromide is added, and the unsaturated monocarboxylic acid is mixed and reacted at 70 to 140 ° C. with heating and stirring.
次に、前記ノボラック型エポキシ化合物と不飽和モノカルボン酸のエステル化反応によって生成する2級水酸基と前記多塩基酸無水物の付加反応は、常法により70〜120℃で加熱攪拌下に反応させて得られる。前記ノボラック型エポキシ化合物と不飽和モノカルボン酸の比率は、2級水酸基の当量数に対し酸無水物の当量数は0.1以上が好ましく、生成樹脂の酸価の範囲は好ましくは30〜150mgKOH/g、より好ましくは40〜100mgKOH/gである。 Next, the secondary hydroxyl group produced by the esterification reaction of the novolak type epoxy compound and the unsaturated monocarboxylic acid and the polybasic acid anhydride are reacted at 70 to 120 ° C. with heating and stirring by a conventional method. Obtained. The ratio of the novolac epoxy compound to the unsaturated monocarboxylic acid is preferably 0.1 or more with respect to the number of equivalents of secondary hydroxyl groups, and the acid value range of the resulting resin is preferably 30 to 150 mgKOH. / G, more preferably 40 to 100 mg KOH / g.
上記二つの感光性樹脂成分(A−1)と(A−2)の配合率は、質量比で、好ましくは90:10〜10:90、より好ましくは85:15〜15:85であり、組成物の全質量に対する感光性樹脂成分(A−1)と(A−2)の合計配合率は、好ましくは10〜50%、より好ましくは15〜45%である。 The blending ratio of the two photosensitive resin components (A-1) and (A-2) is a mass ratio, preferably 90:10 to 10:90, more preferably 85:15 to 15:85, The total blending ratio of the photosensitive resin components (A-1) and (A-2) with respect to the total mass of the composition is preferably 10 to 50%, more preferably 15 to 45%.
ところで、上記課題を解決する上で、本発明のソルダーレジスト組成物の硬化後におけるガラス転移温度(Tg)と架橋密度とが密接に係わることが本発明者等により見出されたことは記述の通りである。特に、基板の反り抑制、耐熱性、解像性等の観点から、本発明のソルダーレジスト組成物におけるガラス転移温度(Tg)は好ましくは100℃以上、より好ましくは100℃〜140℃であり、また、架橋密度は好ましくは2×103〜1.2×104mol/m3、より好ましくは5×103〜1.2×104mol/m3である。 By the way, in solving the above-mentioned problems, the inventors found that the glass transition temperature (Tg) after curing of the solder resist composition of the present invention and the crosslinking density are closely related. Street. In particular, the glass transition temperature (Tg) in the solder resist composition of the present invention is preferably 100 ° C. or higher, more preferably 100 ° C. to 140 ° C. from the viewpoints of substrate warpage suppression, heat resistance, resolution, and the like. The crosslink density is preferably 2 × 10 3 to 1.2 × 10 4 mol / m 3 , more preferably 5 × 10 3 to 1.2 × 10 4 mol / m 3 .
従って、上記二つの感光性樹脂成分(A−1)と(A−2)の配合率や、後掲の成分(B)〜(E)、並びに他の任意成分の配合率は、本明細書に記載の範囲内において、且つガラス転移温度及び架橋密度が上記範囲内となるよう調節することが好ましい。 Accordingly, the blending ratio of the two photosensitive resin components (A-1) and (A-2), the blending ratios of the components (B) to (E) described later, and other optional components are described in this specification. It is preferable to adjust so that the glass transition temperature and the crosslinking density are within the above-mentioned ranges.
本発明において架橋密度(n)、及びガラス転移温度(Tg)は、後掲の実施例に記載のJIS K7244−4に記載の熱硬化性塗料の動的粘弾性試験方法及び計算式により求められる。すなわち、ガラス転移温度(Tg)は、JIS K7244−4に記載の試験方法に準拠し得られる動的粘弾性試験結果によるE’(貯蔵弾性率)、E”(損失弾性率)から下式:
Tanδ=E”/E’
に従い求められるTanδ(損失正接)の値が最大値のときの温度がガラス転移温度(Tg)である。
In the present invention, the crosslinking density (n) and the glass transition temperature (Tg) are determined by the dynamic viscoelasticity test method and calculation formula for thermosetting paints described in JIS K7244-4 described in the examples given later. . That is, the glass transition temperature (Tg) is calculated from E ′ (storage elastic modulus) and E ″ (loss elastic modulus) based on the dynamic viscoelasticity test result obtained according to the test method described in JIS K7244-4:
Tanδ = E "/ E '
The glass transition temperature (Tg) is the temperature at which the value of Tan δ (loss tangent) determined in accordance with the above is the maximum value.
また、架橋密度(n)は、E’(貯蔵弾性率)から式(1)に従い求められる。 Further, the crosslinking density (n) is obtained from E ′ (storage elastic modulus) according to the formula (1).
n=ρ/Mc=E’min/3ΦRT (1)
式(1)中、E’minは、貯蔵弾性率E’の最小値を表わし、Φはフロント係数≒1を表わし、ρは試料密度を表わし、Rは気体定数を表わし、TはE’minの絶対温度を表わし、Mcは架橋間分子量を表わす。
n = ρ / Mc = E′min / 3ΦRT (1)
In Equation (1), E′min represents the minimum value of the storage elastic modulus E ′, Φ represents the front coefficient≈1, ρ represents the sample density, R represents the gas constant, and T represents E′min. The absolute temperature is expressed by Mc and the molecular weight between crosslinks.
次に、(B)光重合開始剤について説明する。
光重合開始剤(B)としては、例えば、アセトフェノン、2,2−ジメトキシ−2−フェニルアセトフェノン、2,2−ジエトキシ−2−フェニルアセトフェノン、p−ジメチルアミノプロピオフェノン、ジクロロアセトフェノン、トリクロロアセトフェノン、p−tert−ブチルトリクロロアセトフェノン、1−ヒドロキシシクロヘキシルフェニルケトン、2−メチル−1−[4−(メチルチオ)フェニル]−2−モルフォリノ−プロパン−1−オン、2−ベンジル−2−ジメチルアミノ−1−(4−モルフォリノフェニル)−ブタノン−1、N,N−ジメチルアミノアセトフェノン等のアセトフェノン類;ベンゾフェノン、メチルベンゾフェノン、2−クロロベンゾフェノン、4,4′−ジクロロベンゾフェノン、4,4′−ビスジメチルアミノベンゾフェノン、4,4′−ビスジエチルアミノベンゾフェノン、ミヒラーズケトン、4−ベンゾイル−4′−メチルジフェニルサルファイド等のベンゾフェノン類;ベンジル;ベンゾイン、ベンゾインメチルエーテル、ベンゾインエチルエーテル、ベンゾインイソプロピルエーテル、ベンゾインイソブチルエーテル等のベンゾインエーテル類;アセトフェノンジメチルケタール、ベンジルジメチルケタール等のケタール類;チオキサントン、2−クロロチオキサントン、2,4−ジメチルチオキサントン、2,4−ジエチルチオキサントン、2,4−ジイソプロピルチオキサントン等のチオキサントン類;2−メチルアントラキノン、2−エチルアントラキノン、2−tert−ブチルアントラキノン、1−クロロアントラキノン、2−アミノアントラキノン、2,3−ジフェニルアントラキノン等のアントラキノン類;ベンゾイルパーオキシド、クメンパーオキシド等の有機過酸化物;2,4,5−トリアリールイミダゾール二量体、リボフラビンテトラブチレート、2−メルカプトベンゾイミダゾール、2−メルカプトベンゾオキサゾール、2−メルカプトベンゾチアゾール等のチオール化合物;2,4,6−トリス−s−トリアジン、2,2,2−トリブロモエタノール、トリブロモメチルフェニルスルホン等の有機ハロゲン化合物;2,4,6−トリメチルベンゾイルジフェニルホスフィンオキサイド、ビス(2,4,6−トリメチルベンゾイル)−フェニルフォスフィンオキサイド)等が挙げられる。これらの化合物は、単独で用いることもでき、また2種以上を組み合わせて使用することもできる。
Next, (B) the photopolymerization initiator will be described.
Examples of the photopolymerization initiator (B) include acetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxy-2-phenylacetophenone, p-dimethylaminopropiophenone, dichloroacetophenone, trichloroacetophenone, p-tert-butyltrichloroacetophenone, 1-hydroxycyclohexyl phenyl ketone, 2-methyl-1- [4- (methylthio) phenyl] -2-morpholino-propan-1-one, 2-benzyl-2-dimethylamino-1 Acetophenones such as-(4-morpholinophenyl) -butanone-1, N, N-dimethylaminoacetophenone; benzophenone, methylbenzophenone, 2-chlorobenzophenone, 4,4'-dichlorobenzophenone, 4,4'-bisdimene Benzophenones such as ruaminobenzophenone, 4,4'-bisdiethylaminobenzophenone, Michler's ketone, 4-benzoyl-4'-methyldiphenyl sulfide; benzyl; benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, etc. Benzoin ethers; ketals such as acetophenone dimethyl ketal and benzyl dimethyl ketal; thioxanthones such as thioxanthone, 2-chlorothioxanthone, 2,4-dimethylthioxanthone, 2,4-diethylthioxanthone, 2,4-diisopropylthioxanthone; 2 -Methylanthraquinone, 2-ethylanthraquinone, 2-tert-butylanthraquinone, 1-chloroanthraquino Anthraquinones such as 2-aminoanthraquinone and 2,3-diphenylanthraquinone; Organic peroxides such as benzoyl peroxide and cumene peroxide; 2,4,5-triarylimidazole dimer, riboflavin tetrabutyrate, 2 -Thiol compounds such as mercaptobenzimidazole, 2-mercaptobenzoxazole, 2-mercaptobenzothiazole; 2,4,6-tris-s-triazine, 2,2,2-tribromoethanol, tribromomethylphenylsulfone, etc. Organic halogen compounds; 2,4,6-trimethylbenzoyldiphenylphosphine oxide, bis (2,4,6-trimethylbenzoyl) -phenylphosphine oxide) and the like. These compounds can be used alone or in combination of two or more.
さらに、上記光重合開始剤(B)は、N,N−ジメチルアミノ安息香酸エチルエステル、N,N−ジメチルアミノ安息香酸イソアミルエステル、ペンチル−4−ジメチルアミノベンゾエート、トリエチルアミン、トリエタノールアミン等の三級アミン類、ビス( η5−シクロペンタジエニル)−ビス(2,6−ジフルオロ−3−(1H−ピロール−1−イル)フェニル)チタニウム等のチタノセン類、2−(アセチルオキシイミノメチル)チオキサンテン−9−オン、1,2−オクタンジオン,1−[4−(フェニルチオ)−,2−(O−ベンゾイルオキシム)]、エタノン,1−[9−エチル−6−(2−メチルベンゾイル)−9H−カルバゾール−3−イル]−,1−(O−アセチルオキシム)等のオキシムエステル類のような光増感剤の1種あるいは2種以上と組み合わせて用いることができる。 Further, the photopolymerization initiator (B) includes N, N-dimethylaminobenzoic acid ethyl ester, N, N-dimethylaminobenzoic acid isoamyl ester, pentyl-4-dimethylaminobenzoate, triethylamine, triethanolamine and the like. Secondary amines, titanocenes such as bis (η5-cyclopentadienyl) -bis (2,6-difluoro-3- (1H-pyrrol-1-yl) phenyl) titanium, 2- (acetyloxyiminomethyl) thio Xanthen-9-one, 1,2-octanedione, 1- [4- (phenylthio)-, 2- (O-benzoyloxime)], ethanone, 1- [9-ethyl-6- (2-methylbenzoyl) Photosensitizers such as oxime esters such as -9H-carbazol-3-yl]-, 1- (O-acetyloxime) It can be used in combination with one or two or more.
前記光重合開始剤(B)の好ましい組合せは、2−ベンジル−2−ジメチルアミノ−1−(4−モルフォリノフェニル)−ブタノン−1(例えばチバ・スペシャルティー・ケミカルズ社製、イルガキュアー369:イルガキュアーは登録商標)と、ビス( η5−シクロペンタジエニル)−ビス(2,6−ジフルオロ−3−(1H−ピロール−1−イル)フェニル)チタニウム(例えばチバ・スペシャルティー・ケミカルズ社製、イルガキュアー784)や2,4,6−トリメチルベンゾイルジフェニルホスフィンオキサイド(例えばBASF製ルシリンTPO)と2−(アセチルオキシイミノメチル)チオキサンテン−9−オン(例えばチバ・スペシャルティー・ケミカルズ社製、CGI−325)または、ビス(2,4,6−トリメチルベンゾイル)−フェニルフォスフィンオキサイド(例えばチバ・スペシャルティー・ケミカルズ社製、イルガキュアー819)等との組合せである。 A preferable combination of the photopolymerization initiator (B) is 2-benzyl-2-dimethylamino-1- (4-morpholinophenyl) -butanone-1 (for example, Irgacure 369 manufactured by Ciba Specialty Chemicals): Irgacure is a registered trademark) and bis (η5-cyclopentadienyl) -bis (2,6-difluoro-3- (1H-pyrrol-1-yl) phenyl) titanium (for example, manufactured by Ciba Specialty Chemicals) , Irgacure 784), 2,4,6-trimethylbenzoyldiphenylphosphine oxide (for example, Lucylin TPO manufactured by BASF) and 2- (acetyloxyiminomethyl) thioxanthen-9-one (for example, manufactured by Ciba Specialty Chemicals) CGI-325) or bis (2,4,6-trimethylbenzene) Benzoyl) - phenyl phosphine oxide (e.g., Ciba Specialty Chemicals Inc., a combination of Irgacure 819), and the like.
また、上記のような光重合開始剤(B)の使用量の好適な範囲は、カルボン酸含有感光性樹脂(A)(カルボキシル基含有感光性樹脂(A−1)と感光性樹脂(A−2)の合計量)100質量部に対して好ましくは5〜30質量部、より好ましくは5〜25質量部となる割合である。光重合開始剤の配合割合が上記範囲よりも少ない場合、得られる組成物の光硬化性が悪くなる。一方、上記範囲よりも多い場合には、得られる硬化塗膜の特性が悪くなり、また、組成物の保存安定性が悪くなるので好ましくない。 Moreover, the suitable range of the usage-amount of the above photoinitiators (B) is carboxylic acid containing photosensitive resin (A) (carboxyl group containing photosensitive resin (A-1) and photosensitive resin (A-). The total amount of 2) is preferably 5 to 30 parts by mass, more preferably 5 to 25 parts by mass with respect to 100 parts by mass. When the mixture ratio of a photoinitiator is less than the said range, the photocurability of the composition obtained will worsen. On the other hand, when the amount is larger than the above range, the properties of the resulting cured coating film are deteriorated, and the storage stability of the composition is deteriorated.
次に、(C)希釈剤について説明する。希釈剤(C)としては、有機溶剤及び/又は光重合性モノマーが使用できる。 Next, (C) the diluent will be described. As the diluent (C), an organic solvent and / or a photopolymerizable monomer can be used.
有機溶剤としては、メチルエチルケトン、シクロヘキサノン等のケトン類;トルエン、キシレン、テトラメチルベンゼン等の芳香族炭化水素類;セロソルブ、メチルセロソルブ、ブチルセロソルブ、カルビトール、メチルカルビトール、ブチルカルビトール、プロピレングリコールモノメチルエーテル、ジプロピレングリコールモノメチルエーテル、ジプロピレングリコールジエチルエーテル、トリエチレングリコールモノエチルエーテル等のグリコールエーテル類;酢酸エチル、酢酸ブチル、セロソルブアセテート、ブチルセロソルブアセテート、カルビトールアセテート、ブチルカルビトールアセテート、プロピレングリコールモノメチルエーテルアセテート、ジプロピレングリコールモノメチルエーテルアセテート等の酢酸エステル類;エタノール、プロパノール、エチレングリコール、プロピレングリコール等のアルコール類;オクタン、デカン等の脂肪族炭化水素;石油エーテル、石油ナフサ、水添石油ナフサ、ソルベントナフサ等の石油系溶剤などが挙げられる。これらの有機溶剤は、単独で又は2種以上を組み合わせて用いることができる。 Examples of organic solvents include ketones such as methyl ethyl ketone and cyclohexanone; aromatic hydrocarbons such as toluene, xylene, and tetramethylbenzene; cellosolve, methyl cellosolve, butyl cellosolve, carbitol, methyl carbitol, butyl carbitol, propylene glycol monomethyl ether , Glycol ethers such as dipropylene glycol monomethyl ether, dipropylene glycol diethyl ether, triethylene glycol monoethyl ether; ethyl acetate, butyl acetate, cellosolve acetate, butyl cellosolve acetate, carbitol acetate, butyl carbitol acetate, propylene glycol monomethyl ether Acetates such as acetate and dipropylene glycol monomethyl ether acetate Ethanol, propanol, ethylene glycol, alcohols such as propylene glycol; octane, aliphatic hydrocarbons decane; petroleum ether, petroleum naphtha, hydrogenated petroleum naphtha, and petroleum solvents such as solvent naphtha. These organic solvents can be used alone or in combination of two or more.
有機溶剤の使用目的は、前記カルボキシル基含有感光性樹脂(A−1)および感光性樹脂(A−2)を溶解し、希釈せしめ、それによって液状として塗布し、次いで仮乾燥させることにより造膜せしめ、接触露光を可能とするためである。 The purpose of using the organic solvent is to form the film by dissolving the carboxyl group-containing photosensitive resin (A-1) and the photosensitive resin (A-2), diluting them, applying them as liquids, and then temporarily drying them. This is to allow contact exposure.
有機溶剤の使用量は特定の割合に限定されるものではなく、選択する塗布方法等に応じて適宜設定できる。 The usage-amount of an organic solvent is not limited to a specific ratio, It can set suitably according to the coating method etc. to select.
一方、光重合性モノマーの代表的なものとしては、2−ヒドロキシエチル(メタ)アクリレート、2−ヒドロキシプロピル(メタ)アクリレート、N−ビニルピロリドン、アクリロイルモルフォリン、メトキシテトラエチレングリコール(メタ)アクリレート、メトキシポリエチレングリコール(メタ)アクリレート、ポリエチレグリコールジ(メタ)アクリレート、N,N−ジメチル(メタ)アクリルアミド、N−メチロール(メタ)アクリルアミド、N,N−ジメチルアミノプロピル(メタ)アクリルアミド、N,N−ジメチルアミノエチル(メタ)アクリレート、N,N−ジメチルアミノプロピル(メタ)アクリレート、メラミン(メタ)アクリレート、ジエチレングリコールジ(メタ)アクリレート、トリエチレングリコールジ(メタ)アクリレート、プロピレングリコールジ(メタ)アクリレート、ジプロピレングリコールジ(メタ)アクリレート、トリプロピレングリコールジ(メタ)アクリレート、ポリプロピレングリコールジ(メタ)アクリレート、フェノキシエチル(メタ)アクリレート、テトラヒドロフルフリル(メタ)アクリレート、シクロヘキシル(メタ)アクリレート、グリセリンジグリシジルエーテルジ(メタ)アクリレート、グリセリントリグリシジルエーテルトリ(メタ)アクリレート、イソボルニル(メタ)アクリレート、シクロペンタジエン モノ−あるいはジ−(メタ)アクリレート;ヘキサンジオール、トリメチロールプロパン、ペンタエリスリトール、ジトリメチロールプロパン、ジペンタエリスリトール、トリス−ヒドロキシエチルイソシアヌレート等の多価アルコールの多価(メタ)アクリレート類又はこれら多価アルコールのエチレンオキサイドもしくはプロピレンオキサイド付加物の多価(メタ)アクリレート類;多塩基酸とヒドロキシアルキル(メタ)アクリレートとのモノ−、ジ−、トリ−又はそれ以上のポリエステルなどが挙げられる。これらの光重合性モノマーは、単独で又は2種以上を組み合わせて用いることができる。 On the other hand, representative photopolymerizable monomers include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, N-vinylpyrrolidone, acryloylmorpholine, methoxytetraethylene glycol (meth) acrylate, Methoxypolyethylene glycol (meth) acrylate, polyethylene glycol di (meth) acrylate, N, N-dimethyl (meth) acrylamide, N-methylol (meth) acrylamide, N, N-dimethylaminopropyl (meth) acrylamide, N, N- Dimethylaminoethyl (meth) acrylate, N, N-dimethylaminopropyl (meth) acrylate, melamine (meth) acrylate, diethylene glycol di (meth) acrylate, triethylene glycol di (me ) Acrylate, propylene glycol di (meth) acrylate, dipropylene glycol di (meth) acrylate, tripropylene glycol di (meth) acrylate, polypropylene glycol di (meth) acrylate, phenoxyethyl (meth) acrylate, tetrahydrofurfuryl (meth) Acrylate, cyclohexyl (meth) acrylate, glycerin diglycidyl ether di (meth) acrylate, glycerin triglycidyl ether tri (meth) acrylate, isobornyl (meth) acrylate, cyclopentadiene mono- or di- (meth) acrylate; hexanediol, tri Methylolpropane, pentaerythritol, ditrimethylolpropane, dipentaerythritol, tris-hydroxyethyl alcohol Polyhydric (meth) acrylates of polyhydric alcohols such as cyanurate or polyhydric (meth) acrylates of ethylene oxide or propylene oxide adducts of these polyhydric alcohols; mono- of polybasic acids and hydroxyalkyl (meth) acrylates , Di-, tri- or higher polyesters. These photopolymerizable monomers can be used alone or in combination of two or more.
上記光重合性モノマーの使用目的は、前記カルボキシル基含有感光性樹脂(A−1)および感光性樹脂(A−2)を希釈せしめ、塗布しやすい状態にするとともに、光重合性を与えるものである。 The purpose of use of the photopolymerizable monomer is to dilute the carboxyl group-containing photosensitive resin (A-1) and the photosensitive resin (A-2) to make it easy to apply and to provide photopolymerization. is there.
光重合性モノマーの好適な使用量は、前記カルボキシル基含有感光性樹脂(A−1)および感光性樹脂(A−2)の合計量100質量部当たり5〜40質量部の範囲が適当である。光重合性モノマーの使用量が上記範囲よりも少ない場合には、光硬化性付与効果が充分ではなく、一方、上記範囲を超えると塗膜の指触乾燥性が低下するため好ましくない。 A suitable use amount of the photopolymerizable monomer is suitably in the range of 5 to 40 parts by mass per 100 parts by mass of the total amount of the carboxyl group-containing photosensitive resin (A-1) and the photosensitive resin (A-2). . When the amount of the photopolymerizable monomer used is less than the above range, the effect of imparting photocurability is not sufficient. On the other hand, when the amount exceeds the above range, the touch drying property of the coating film is lowered, which is not preferable.
本発明に用いられる1分子中に少なくとも2個のエポキシ基を有する多官能エポキシ化合物(D)としては、例えば日本化薬(株)製EBPS−200、旭電化工業(株)製EPX−30、大日本インキ化学工業(株)製エピクロンEXA−1514(エピクロンは登録商標)等のビスフェノールS型エポキシ樹脂;日本油脂(株)製ブレンマーDGT(ブレンマーは登録商標)等のジグリシジルフタレート樹脂;日産化学(株)製TEPIC(登録商標)、チバ・スペシャルティー・ケミカルズ社製アラルダイトPT810(アラルダイトは登録商標)等の複素環式エポキシ樹脂;油化シェルエポキシ(株)製YX−4000等のビキシレノール型エポキシ樹脂;油化シェルエポキシ(株)製YL−6056等のビフェノール型エポキシ樹脂;東都化成(株)製ZX−1063等のテトラグリシジルキシレノイルエタン樹脂などの希釈剤に難溶性のエポキシ樹脂や、油化シェルエポキシ(株)製エピコート−1009、−1031(エピコートは登録商標)、大日本インキ化学工業(株)製エピクロンN−3050、N−7050、N−9050、旭化成工業(株)製AER−664、AER−667、AER−669、東都化成(株)製YD−012、YD−014、YD−017、YD−020、YD−002、チバ・スペシャルティー・ケミカルズ社製XAC−5005、GT−7004、6484T、6099、ダウ・ケミカル社製DER−642U、DER−673MF、旭電化工業(株)製EP−5400、EP−5900等のビスフェノールA型エポキシ樹脂;東都化成(株)製ST−2004、ST−2007等の水添ビスフェノールA型エポキシ樹脂;東都化成(株)製YDF−2004、YDF−2007、新日鉄化学(株)製GK−5079L等のビスフェノールF型エポキシ樹脂;坂本薬品工業(株)製SR−BBS、SR−TBA−400、旭電化工業(株)製EP−62、EP−66、旭化成工業(株)製AER−755、AER−765、東都化成(株)製YDB−600、YDB−715等の臭素化ビスフェノールA型エポキシ樹脂;日本化薬(株)製EPPN−201、EOCN−103、EOCN−1020、EOCN−1025、BREN、旭化成工業(株)製ECN−278、ECN−292、ECN−299、チバ・スペシャルティー・ケミカルズ社製ECN−1273、ECN−1299、東都化成(株)製YDCN−220L、YDCN−220HH、YDCN−702、YDCN−704、YDPN−601、YDPN−602、大日本インキ化学工業(株)製エピクロンN−673、N−680、N−695、N−770、N−775等のノボラック型エポキシ 樹脂;旭電化工業(株)製EPX−8001、EPX−8002、EPPX−8060、EPPX−8061、大日本インキ化学工業(株)製エピクロンN−880等のビスフェノールAのノボラック型エポキシ 樹脂;旭電化工業(株)製EPX−49−60、EPX−49−30等のキレート型エポキシ樹脂;東都化成(株)製YDG−414等のグリオキザール型エポキシ樹脂;東都化成(株)製YH−1402、ST−110、油化シェルエポキシ(株)製YL−931、YL−933等のアミノ基含有エポキシ樹脂;大日本インキ化学工業(株)製エピクロンTSR−601、旭電化工業(株)製EPX−84−2、EPX−4061等のゴム変性エポキシ樹脂;山陽国策パルプ(株)製DCE−400等のジシクロペンタジエンフェノリック型エポキシ樹脂;旭電化工業(株)製X−1359等のシリコーン変性エポキシ樹脂;ダイセル化学工業(株)製プラクセルG−402、G−710等のε−カプロラクトン変性エポキシ樹脂などの希釈剤に可溶性のエポキシ樹脂などが挙げられる。これらのエポキシ樹脂は、単独で又は2種以上を組み合わせて用いることができるが、特に希釈剤に難溶性の微粒状のエポキシ樹脂、あるいは難溶性のエポキシ樹脂と可溶性のエポキシ樹脂を組み合わせて用いることが好ましい。 As the polyfunctional epoxy compound (D) having at least two epoxy groups in one molecule used in the present invention, for example, EBPS-200 manufactured by Nippon Kayaku Co., Ltd., EPX-30 manufactured by Asahi Denka Kogyo Co., Ltd., Bisphenol S type epoxy resins such as Epiklon EXA-1514 (Epiclon is a registered trademark) manufactured by Dainippon Ink and Chemicals, Inc .; Diglycidyl phthalate resins such as Blemmer DGT (Blenmer is a registered trademark) manufactured by Nippon Oil &Fats; Nissan Chemical Heterocyclic epoxy resins such as TEPIC (registered trademark) manufactured by Ciba Specialty Chemicals Co., Ltd., and xylenol type such as YX-4000 manufactured by Yuka Shell Epoxy Co., Ltd. Epoxy resin; biphenol type epoxy tree such as YL-6056 manufactured by Yuka Shell Epoxy Co., Ltd. An epoxy resin that is sparingly soluble in diluents such as tetraglycidylxylenoylethane resin such as ZX-1063 manufactured by Tohto Kasei Co., Ltd., and Epicoat-1009 and -1031 manufactured by Yuka Shell Epoxy Co., Ltd. (Epicoat is a registered trademark) ), Dainippon Ink & Chemicals, Inc. Epicron N-3050, N-7050, N-9050, Asahi Kasei Kogyo Co., Ltd. AER-664, AER-667, AER-669, Toto Kasei Co., Ltd. YD- 012, YD-014, YD-017, YD-020, YD-002, XAC-5005 from Ciba Specialty Chemicals, GT-7004, 6484T, 6099, DER-642U, DER-673MF from Dow Chemical Bisphenol A type epoxy resins such as EP-5400 and EP-5900 manufactured by Asahi Denka Kogyo Co., Ltd .; Hydrogenated bisphenol A type epoxy resins such as ST-2004 and ST-2007 manufactured by Kasei Co., Ltd .; Bisphenol F types such as YDF-2004 and YDF-2007 manufactured by Tohto Kasei Co., Ltd. and GK-5079L manufactured by Nippon Steel Chemical Co., Ltd. Epoxy resin: SR-BBS, SR-TBA-400 manufactured by Sakamoto Yakuhin Kogyo Co., Ltd., EP-62, EP-66 manufactured by Asahi Denka Kogyo Co., Ltd., AER-755, AER-765 manufactured by Asahi Kasei Kogyo Co., Ltd., Toto Brominated bisphenol A type epoxy resins such as YDB-600 and YDB-715 manufactured by Kasei Co., Ltd .; EPPN-201, EOCN-103, EOCN-1020, EOCN-1025, BREN manufactured by Nippon Kayaku Co., Ltd., Asahi Kasei Kogyo ( Co., Ltd. ECN-278, ECN-292, ECN-299, Ciba Specialty Chemicals ECN-1273, E CN-1299, YDCN-220L, YDCN-220HH, YDCN-702, YDCN-704, YDPN-601, YDPN-602, manufactured by Daito Ink Chemical Co., Ltd., Epicron N-673, N- Novolak type epoxy resins such as 680, N-695, N-770, and N-775; EPX-8001, EPX-8002, EPPX-8060, EPPX-8061 manufactured by Asahi Denka Kogyo Co., Ltd., Dainippon Ink & Chemicals, Inc. ) Epoxylon N-880 and other bisphenol A novolak type epoxy resins; Asahi Denka Kogyo Co., Ltd. EPX-49-60, EPX-49-30 and other chelate type epoxy resins; Toto Kasei Co., Ltd. YDG-414 Glyoxal type epoxy resin, etc .; YH-1402, ST-110 manufactured by Toto Kasei Co., Ltd. Amino group-containing epoxy resins such as YL-931 and YL-933 manufactured by Epoxy Corporation; Epicron TSR-601 manufactured by Dainippon Ink & Chemicals, Inc. EPX-84-2 and EPX-4061 manufactured by Asahi Denka Kogyo Co., Ltd. Rubber-modified epoxy resins such as Sanyo Kokusaku Pulp Co., Ltd. DCE-400 and other dicyclopentadiene phenolic epoxy resins; Asahi Denka Kogyo Co., Ltd. X-1359 and other silicone-modified epoxy resins; Daicel Chemical Industries, Ltd. Examples include epoxy resins that are soluble in diluents such as ε-caprolactone-modified epoxy resins such as Plaxel G-402 and G-710. These epoxy resins can be used singly or in combination of two or more, but in particular, a finely particulate epoxy resin hardly soluble in a diluent, or a combination of a hardly soluble epoxy resin and a soluble epoxy resin. Is preferred.
上記熱硬化性成分としての多官能エポキシ化合物(D)の配合率は、前記カルボキシル基含有感光性樹脂(A−1)および感光性樹脂(A−2)の合計量質量部当たり10〜70質量部の範囲が好ましく、より好ましくは15〜50質量部である。 The blending ratio of the polyfunctional epoxy compound (D) as the thermosetting component is 10 to 70 masses per mass part of the total amount of the carboxyl group-containing photosensitive resin (A-1) and the photosensitive resin (A-2). The range of parts is preferred, more preferably 15 to 50 parts by weight.
さらに本発明に用いられる、白色または黒色の着色剤(E)としては、公知慣用の着色剤を用いることができる。カラーインデックス(C.I.;The Society ofDyers and Colourists 社発行) においてピグメント(Pigment)に分類されている化合物、具体的には、下記のようなカラーインデックス(C.I.)番号が付されているものを挙げることができる。 Further, as the white or black colorant (E) used in the present invention, known and commonly used colorants can be used. Examples include compounds classified as Pigments in the Color Index (CI; published by The Society of Dyers and Colourists), specifically those with the following Color Index (CI) numbers: it can.
白色の着色剤としては、C.I.ピグメントホワイト4に示される酸化亜鉛、C.I.ピグメントホワイト6に示される酸化チタン、C.I.ピグメントホワイト7に示される硫化亜鉛があげられるが、着色力と無毒性という点から特に好ましいのは酸化チタンであり例えば、富士チタン工業(株)製TR−600、TR−700、TR−750、TR−840、石原産業(株)R−550、R−580、R−630、R−820、CR−50、CR−60、CR−90、チタン工業(株)製KR−270、KR−310、KR−380等のルチル型酸化チタン、富士チタン工業(株)製TA−100、TA−200、TA−300、TA−500、石原産業(株)製A100、A220、チタン工業(株)製KA−15、KA−20、KA−35、KA−90等のアナターゼ型酸化チタンがあげられる。配合率は特に限定されないが、有機溶剤を除く本発明のレジスト組成物の全成分中に、0.1〜50質量%、最適には0.5〜40質量%含まれていることが好ましい。0.1質量%未満の場合、十分な濃度が得られにくく、50質量%より多い場合には塗膜の強度不足等の問題が生じ易くなるので好ましくない。 Examples of the white colorant include zinc oxide shown in CI Pigment White 4, titanium oxide shown in CI Pigment White 6, and zinc sulfide shown in CI Pigment White 7, but particularly from the viewpoint of coloring power and non-toxicity. Titanium oxide is preferable, for example, TR-600, TR-700, TR-750, TR-840 manufactured by Fuji Titanium Industry Co., Ltd., R-550, R-580, R-630, R, Ishihara Sangyo Co., Ltd. -820, CR-50, CR-60, CR-90, RU-type titanium oxide such as KR-270, KR-310, KR-380 manufactured by Titanium Industry Co., Ltd., TA-100 manufactured by Fuji Titanium Industry Co., Ltd. TA-200, TA-300, TA-500, A100, A220 manufactured by Ishihara Sangyo Co., Ltd., KA-15, KA-20, KA-35, KA-9 manufactured by Titanium Industry Co., Ltd. Anatase type titanium oxide and the like. The blending ratio is not particularly limited, but it is preferably 0.1 to 50% by mass, and most preferably 0.5 to 40% by mass in all components of the resist composition of the present invention excluding the organic solvent. When it is less than 0.1% by mass, it is difficult to obtain a sufficient concentration, and when it is more than 50% by mass, problems such as insufficient strength of the coating film are liable to occur.
また黒色の着色剤としては、C.I.ピグメントブラック6、7、9および18等で示されるに示されるカーボンブラック系の顔料、C.I.ピグメントブラック8、10等に示される黒鉛系の顔料、C.I.ピグメントブラック11、12および27等で示される酸化鉄系の顔料:例えば戸田工業(株)製KN−370の酸化鉄、三菱マテリアル(株)製13Mのチタンブラック、C.I.ピグメントブラック20等で示されるアンスラキノン系の顔料、C.I.ピグメントブラック13、25および29等で示される酸化コバルト系の顔料、C.I.ピグメントブラック15および28等で示される酸化銅系の顔料、C.I.ピグメントブラック14および26等で示されるマンガン系の顔料、C.I.ピグメントブラック23等で示される酸化アンチモン系の顔料、C.I.ピグメントブラック30等で示される酸化ニッケル系の顔料、C.I.ピグメントブラック31、32で示されるペリレン系の顔料、および硫化モリブデンや硫化ビスマスも好適な顔料として例示できる。これらの顔料は、単独で、または適宜組み合わせて使用される。特に好ましいのは、カーボンブラックであり例えば、三菱化学(株)製のカーボンブラック、M−40、M−45、MA−8、MA−100、またペリレン系の顔料は有機顔料の中でも低ハロゲン化に有効である。配合量は特に限定されないが、有機溶剤を除く本発明のレジスト組成物の全成分中に、0.01〜20質量%、更には0.1〜10質量%、最適には0.2〜7質量%含まれていることが好ましい。0.01質量%未満の場合、十分な濃度が得られにくく、一方20質量%以上より多い場合には塗膜の強度不足等の問題が生じ易くなるので好ましくない。 Examples of the black colorant include carbon black pigments indicated by CI pigment black 6, 7, 9 and 18; graphite pigments indicated by CI pigment black 8, 10; CI pigment black 11 , 12 and 27 etc .: For example, Toda Kogyo KN-370 iron oxide, Mitsubishi Materials Corporation 13M titanium black, CI pigment black 20 anthraquinone Pigments, cobalt pigments such as CI pigment black 13, 25 and 29, copper oxide pigments such as CI pigment black 15 and 28, manganese pigments such as CI pigment black 14 and 26, etc. Pigment, antimony oxide pigment represented by CI pigment black 23, CI pigment Click 30 nickel oxide pigments represented by like, C.I. Perylene pigments represented by Pigment Black 31, 32, and molybdenum sulfide and bismuth sulfide can also be exemplified as a preferable pigment. These pigments are used alone or in appropriate combination. Particularly preferred is carbon black, for example, carbon black manufactured by Mitsubishi Chemical Corporation, M-40, M-45, MA-8, MA-100, and perylene pigments are low halogenated among organic pigments. It is effective for. The compounding amount is not particularly limited, but is 0.01 to 20% by mass, more preferably 0.1 to 10% by mass, and most preferably 0.2 to 7% in all components of the resist composition of the present invention excluding the organic solvent. It is preferable that it is contained by mass%. When the amount is less than 0.01% by mass, it is difficult to obtain a sufficient concentration. On the other hand, when it is more than 20% by mass, problems such as insufficient strength of the coating film are likely to occur.
本発明では、前記多官能エポキシ化合物(D)とともにエポキシ硬化触媒を使用することができる。 In the present invention, an epoxy curing catalyst can be used together with the polyfunctional epoxy compound (D).
このような硬化触媒としては、例えば、イミダゾール、2−メチルイミダゾール、2−エチルイミダゾール、2−エチル−4−メチルイミダゾール、2−フェニルイミダゾール、4−フェニルイミダゾール、1−シアノエチル−2−フェニルイミダゾール、1−(2−シアノエチル)−2−エチル−4−メチルイミダゾール等のイミダゾール誘導体;ジシアンジアミド、ベンジルジメチルアミン、4−(ジメチルアミノ)−N,N−ジメチルベンジルアミン、4−メトキシ−N,N−ジメチルベンジルアミン、4−メチル−N,N−ジメチルベンジルアミン等のアミン化合物、アジピン酸ヒドラジド、セバシン酸ヒドラジド等のヒドラジン化合物;トリフェニルホスフィン等のリン化合物など、また市販されているものとしては、例えば四国化成工業社製の2MZ−A、2MZ−OK、2PHZ、2P4BHZ、2P4MHZ(いずれもイミダゾール系化合物の商品名)、サンアプロ社製のU−CAT3503N、U−CAT3502T(いずれもジメチルアミンのブロックイソシアネート化合物の商品名)、DBU、DBN、U−CATSA102、U−CAT5002(いずれも二環式アミジン化合物及びその塩)などが挙げられ、これらを単独で又は2種以上を混合して使用することができる。また、密着性付与剤としても機能するグアナミン、アセトグアナミン、ベンゾグアナミン、メラミン、2,4−ジアミノ−6−メタクリロイルオキシエチル−S−トリアジン、2−ビニル−2,4−ジアミノ−S−トリアジン、2−ビニル−4,6−ジアミノ−S−トリアジン・イソシアヌル酸付加物、2,4−ジアミノ−6−メタクリロイルオキシエチル−S−トリアジン・イソシアヌル酸付加物等のS−トリアジン誘導体を用いることもでき、好ましくはこれら密着性付与剤としても機能する化合物を前記熱硬化触媒と併用する。 Examples of such a curing catalyst include imidazole, 2-methylimidazole, 2-ethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 4-phenylimidazole, 1-cyanoethyl-2-phenylimidazole, Imidazole derivatives such as 1- (2-cyanoethyl) -2-ethyl-4-methylimidazole; dicyandiamide, benzyldimethylamine, 4- (dimethylamino) -N, N-dimethylbenzylamine, 4-methoxy-N, N- Amine compounds such as dimethylbenzylamine, 4-methyl-N, N-dimethylbenzylamine, hydrazine compounds such as adipic hydrazide and sebacic acid hydrazide; phosphorus compounds such as triphenylphosphine, For example, Shikoku 2MZ-A, 2MZ-OK, 2PHZ, 2P4BHZ, 2P4MHZ (all are trade names of imidazole compounds) manufactured by Seiko Kogyo Co., Ltd., U-CAT3503N, U-CAT3502T (all are dimethylamine block isocyanate compounds) Product name), DBU, DBN, U-CATSA102, U-CAT5002 (all are bicyclic amidine compounds and salts thereof), and the like can be used alone or in admixture of two or more. Guanamine, acetoguanamine, benzoguanamine, melamine, 2,4-diamino-6-methacryloyloxyethyl-S-triazine, 2-vinyl-2,4-diamino-S-triazine, 2 S-triazine derivatives such as -vinyl-4,6-diamino-S-triazine / isocyanuric acid adduct, 2,4-diamino-6-methacryloyloxyethyl-S-triazine / isocyanuric acid adduct can also be used, Preferably, a compound that also functions as an adhesion promoter is used in combination with the thermosetting catalyst.
また、本発明のソルダーレジスト組成物は、さらに硬化物の密着性、機械的強度、線膨張係数などの特性を向上させる目的で、無機充填材を配合することができる。例えば、硫酸バリウム、チタン酸バリウム、酸化ケイ素粉、微粉状酸化ケイ素、無定形シリカ、タルク、クレー、炭酸マグネシウム、炭酸カルシウム、酸化アルミニウム、水酸化アルミニウム、雲母粉などの公知慣用の無機充填剤が使用できる。 In addition, the solder resist composition of the present invention can be blended with an inorganic filler for the purpose of further improving properties such as adhesion, mechanical strength, and linear expansion coefficient of the cured product. For example, known and commonly used inorganic fillers such as barium sulfate, barium titanate, silicon oxide powder, finely divided silicon oxide, amorphous silica, talc, clay, magnesium carbonate, calcium carbonate, aluminum oxide, aluminum hydroxide, mica powder, etc. Can be used.
本発明のソルダーレジスト組成物は、さらに必要に応じて、ハイドロキノン、ハイドロキノンモノメチルエーテル、t−ブチルカテコール、ピロガロール、フェノチアジンなどの公知慣用の熱重合禁止剤、微粉シリカ、有機ベントナイト、モンモリロナイトなどの公知慣用の増粘剤、シリコーン系、フッ素系、高分子系などの消泡剤及び/又はレベリング剤、イミダゾール系、チアゾール系、トリアゾール系等のシランカップリング剤などのような公知慣用の添加剤類を配合することができる。 If necessary, the solder resist composition of the present invention may be a known conventional thermal polymerization inhibitor such as hydroquinone, hydroquinone monomethyl ether, t-butylcatechol, pyrogallol, phenothiazine, or the like, or a known conventional polymer such as finely divided silica, organic bentonite, or montmorillonite. Conventional additives such as thickeners, silicone-based, fluorine-based, polymer-based antifoaming agents and / or leveling agents, imidazole-based, thiazole-based, triazole-based silane coupling agents, etc. Can be blended.
さらに本発明では、硬化物の白色または黒色が損なわれない範囲で、フタロシアニン・ブルー、フタロシアニン・グリーン、アイオジン・グリーン、ジスアゾイエロー等の着色剤を配合することができる。 Furthermore, in the present invention, a colorant such as phthalocyanine blue, phthalocyanine green, iodin green, or disazo yellow can be added as long as the white or black color of the cured product is not impaired.
本発明のソルダーレジスト組成物は、例えば前記希釈剤(C)で塗布方法に適した粘度に調整し、回路形成された基板上に、ディップコート法、フローコート法、ロールコート法、バーコーター法、スクリーン印刷法、カーテンコート法等の方法により全面塗布し、約60〜100℃の温度で組成物中に含まれる有機溶剤を揮発乾燥(仮乾燥)させることにより、タックフリーの塗膜を形成できる。また上記組成物をキャリアフィルム上に塗布し、乾燥させてフィルムとして巻き取ったものを基材上に張り合わせることによっても塗膜を形成できる。その後、接触式(又は非接触方式)により、パターンを形成したフォトマスクを通して選択的に活性エネルギー線により露光し、未露光部を希アルカリ水溶液(例えば0.3〜3%炭酸ソーダ水溶液)により現像してレジストパターンが形成される。 The solder resist composition of the present invention is adjusted to a viscosity suitable for the coating method using, for example, the diluent (C), and a dip coating method, a flow coating method, a roll coating method, a bar coater method on a circuit-formed substrate. The tack-free coating film is formed by coating the entire surface by a method such as screen printing or curtain coating, and evaporating and drying (preliminarily drying) the organic solvent contained in the composition at a temperature of about 60 to 100 ° C. it can. A coating film can also be formed by applying the above composition on a carrier film, drying it and winding it as a film on a substrate. Then, the contact type (or non-contact type) is selectively exposed with active energy rays through a photomask having a pattern formed, and the unexposed portion is developed with a dilute alkaline aqueous solution (for example, 0.3 to 3% sodium carbonate aqueous solution). Thus, a resist pattern is formed.
さらに、例えば約140〜180℃の温度に加熱して熱硬化させることにより、耐熱性、耐薬品性、耐吸湿性、密着性、電気特性などの諸特性に優れた硬化塗膜を形成することができる。 Furthermore, for example, a cured coating film excellent in various properties such as heat resistance, chemical resistance, moisture absorption resistance, adhesion, and electrical characteristics is formed by heating to a temperature of about 140 to 180 ° C. and thermosetting. Can do.
上記回路形成された基板に使用される基材としては、紙フェノール、紙エポキシ、ガラス布エポキシ、ガラスポリイミド、ガラス布/不繊布エポキシ、ガラス布/紙エポキシ、合成繊維エポキシ、フッ素・ポリエチレン・PPO・シアネートエステル等を用いた高周波回路用銅張積層版等の材質を用いたもので全てのグレード(FR−4等)の銅張積層版、その他ポリイミドフィルム、PETフィルム、ガラス基板、セラミック基板、ウエハ板等を挙げることができる。 Base materials used for the circuit-formed substrate include paper phenol, paper epoxy, glass cloth epoxy, glass polyimide, glass cloth / non-woven cloth epoxy, glass cloth / paper epoxy, synthetic fiber epoxy, fluorine / polyethylene / PPO・ Copper-clad laminates of all grades (FR-4, etc.) using materials such as copper-clad laminates for high-frequency circuits using cyanate esters, etc., other polyimide films, PET films, glass substrates, ceramic substrates, A wafer board etc. can be mentioned.
また、活性エネルギー線照射に用いられる照射光源としては、低圧水銀灯、中圧水銀灯、高圧水銀灯、超高圧水銀灯、キセノンランプ又はメタルハライドランプなどが適当である。その他、レーザー光線なども活性エネルギー線として利用できる。 Moreover, as an irradiation light source used for active energy ray irradiation, a low-pressure mercury lamp, a medium-pressure mercury lamp, a high-pressure mercury lamp, an ultrahigh-pressure mercury lamp, a xenon lamp, a metal halide lamp, or the like is appropriate. In addition, laser beams and the like can also be used as active energy rays.
前記現像方法としては、ディッピング法、シャワー法、スプレー法、ブラシ法等によることができ、現像液としては、水酸化カリウム、水酸化ナトリウム、炭酸ナトリウム、炭酸カリウム、リン酸ナトリウム、ケイ酸ナトリウム、アンモニア、アミン類などの希アルカリ水溶液が使用できる。 The developing method can be a dipping method, a shower method, a spray method, a brush method or the like, and as a developer, potassium hydroxide, sodium hydroxide, sodium carbonate, potassium carbonate, sodium phosphate, sodium silicate, A dilute alkaline aqueous solution such as ammonia or amines can be used.
以下に実施例および比較例を示して本発明について具体的に説明するが、本発明が下記実施例に限定されるものではないことはもとよりである。なお、以下において「部」とあるのは、特に断りのない限り全て「質量部」を表わす。 EXAMPLES Hereinafter, the present invention will be described in detail with reference to examples and comparative examples, but the present invention is not limited to the following examples. In the following description, “part” means “part by mass” unless otherwise specified.
<感光性樹脂の合成>
本発明の感光性樹脂(A−1)を下記合成例1、2に従い作製し、カルボキシル基含有感光性樹脂(A−2)を下記合成例3に従い作製した。
<Synthesis of photosensitive resin>
The photosensitive resin (A-1) of the present invention was prepared according to Synthesis Examples 1 and 2 below, and the carboxyl group-containing photosensitive resin (A-2) was prepared according to Synthesis Example 3 below.
(合成例1)
クレゾールノボラック型エポキシ樹脂(日本化薬(株)製、EOCN−104S、軟化点92℃、エポキシ当量220)220部、ジメチロールプロピオン酸13.4部、アクリル酸65部、メチルハイドロキノン0.46部、カルビトールアセテート113部及びソルベントナフサ48.5部を仕込み、90℃に加熱し撹拌し、反応混合物を溶解した。次いで反応液を60℃まで冷却し、トリフェニルホスフィン1.4部を仕込み、100℃に加熱し、約32時間反応させ、酸価が0.5mgKOH/gの反応物を得た。次に、これにテトラヒドロ無水フタル酸36.5部、カルビトールアセテート13.8部及びソルベントナフサ6.0部を仕込み、95℃に加熱し、約6時間反応させ、冷却し、固形物の酸価40mgKOH/g、不揮発分65%のカルボキシル基含有感光性樹脂を得た。以下、この反応溶液をワニス(A−1a)と称する。
(Synthesis Example 1)
Cresol novolac type epoxy resin (manufactured by Nippon Kayaku Co., Ltd., EOCN-104S, softening point 92 ° C., epoxy equivalent 220) 220 parts, dimethylolpropionic acid 13.4 parts, acrylic acid 65 parts, methylhydroquinone 0.46 parts Then, 113 parts of carbitol acetate and 48.5 parts of solvent naphtha were charged, heated to 90 ° C. and stirred to dissolve the reaction mixture. The reaction solution was then cooled to 60 ° C., charged with 1.4 parts of triphenylphosphine, heated to 100 ° C., and reacted for about 32 hours to obtain a reaction product having an acid value of 0.5 mg KOH / g. Next, 36.5 parts of tetrahydrophthalic anhydride, 13.8 parts of carbitol acetate and 6.0 parts of solvent naphtha are added to this, heated to 95 ° C., reacted for about 6 hours, cooled, and cooled to solid acid. A carboxyl group-containing photosensitive resin having a value of 40 mgKOH / g and a nonvolatile content of 65% was obtained. Hereinafter, this reaction solution is referred to as varnish (A-1a).
(合成例2)
クレゾールノボラック型エポキシ樹脂(日本化薬(株)製、EOCN−104S、軟化点92℃、エポキシ当量220)220部(1当量)を攪拌機及び還流冷却器の付いた四つ口フラスコに入れ、カルビトールアセテート218部を加え、加熱溶解した。次に重合禁止剤としてメチルハイドロキノン0.46部と、反応触媒としてトリフェニルホスフィン1.38部を加えた。この混合物を95〜105℃に加熱し、アクリル酸50.4部(0.7当量)、p−ヒドロキシフェネチルアルコール41.5部(0.3当量)を徐々に滴下し、16時間反応させた。この反応生成物(水酸基:1.3当量)を、80〜90℃まで冷却し、テトラヒドロ無水フタル酸91.2部(0.6当量)を加え、8時間反応させ、冷却後、反応溶液(ワニス(A−1b)と称する。)を取り出した。
(Synthesis Example 2)
A cresol novolac type epoxy resin (manufactured by Nippon Kayaku Co., Ltd., EOCN-104S, softening point 92 ° C., epoxy equivalent 220) 220 parts (1 equivalent) was placed in a four-necked flask equipped with a stirrer and a reflux condenser. 218 parts of tall acetate was added and dissolved by heating. Next, 0.46 parts of methylhydroquinone as a polymerization inhibitor and 1.38 parts of triphenylphosphine as a reaction catalyst were added. This mixture was heated to 95 to 105 ° C., 50.4 parts (0.7 equivalents) of acrylic acid and 41.5 parts (0.3 equivalents) of p-hydroxyphenethyl alcohol were gradually added dropwise and reacted for 16 hours. . This reaction product (hydroxyl group: 1.3 equivalents) is cooled to 80 to 90 ° C., 91.2 parts (0.6 equivalents) of tetrahydrophthalic anhydride is added and reacted for 8 hours. After cooling, the reaction solution ( The varnish (referred to as A-1b) was taken out.
このようにして得られたカルボキシル基含有感光性樹脂は、固形物の酸価83mgKOH/g、不揮発分65%であった。 The carboxyl group-containing photosensitive resin thus obtained had a solid acid value of 83 mgKOH / g and a nonvolatile content of 65%.
(合成例3)
クレゾールノボラック型エポキシ樹脂(大日本インキ化学工業(株)製、“エピクロン”(登録商標)N−695、エポキシ当量:220)220部を撹拌機及び還流冷却器の付いた四つ口フラスコに入れ、カルビトールアセテート214部を加え、加熱溶解した。次に、重合禁止剤としてハイドロキノン0.46部と、反応触媒としてトリフェニルホスフィン1.38部を加えた。この混合物を95〜105℃に加熱し、アクリル酸72部を徐々に滴下し、16時間反応させた。この反応生成物を80〜90℃まで冷却し、テトラヒドロ無水フタル酸106部を加え、8時間反応させ、冷却後、反応溶液(ワニス(A−2)と称する。)取り出した。このようにして得られた感光性樹脂は、固形物の酸価100mgKOH/g、不揮発分65%であった。
(Synthesis Example 3)
Cresole novolak type epoxy resin (manufactured by Dainippon Ink & Chemicals, Inc., “Epiclon” (registered trademark) N-695, epoxy equivalent: 220) is placed in a four-necked flask equipped with a stirrer and a reflux condenser. Then, 214 parts of carbitol acetate was added and dissolved by heating. Next, 0.46 part of hydroquinone as a polymerization inhibitor and 1.38 parts of triphenylphosphine as a reaction catalyst were added. This mixture was heated to 95 to 105 ° C., and 72 parts of acrylic acid was gradually added dropwise to react for 16 hours. The reaction product was cooled to 80 to 90 ° C., 106 parts of tetrahydrophthalic anhydride was added and reacted for 8 hours. After cooling, the reaction solution (referred to as varnish (A-2)) was taken out. The photosensitive resin thus obtained had a solid acid value of 100 mgKOH / g and a non-volatile content of 65%.
<実施例1〜12及び比較例1〜8>
前記合成例1〜3で得られたワニス(A−1a)、ワニス(A−1b)、およびワニス(A−2)と、表1に示す成分を同表に記載の配合比率において、3本ロールミルで混練し、ソルダーレジスト組成物を得た。
Three varnishes (A-1a), varnish (A-1b), and varnish (A-2) obtained in Synthesis Examples 1 to 3 and the components shown in Table 1 in the blending ratio described in the same table The solder resist composition was obtained by kneading with a roll mill.
実施例1〜12及び比較例1〜8のソルダーレジスト組成物について、下記評価基準に従い性能を評価した。結果を表2に示す。 About the solder resist composition of Examples 1-12 and Comparative Examples 1-8, performance was evaluated according to the following evaluation criteria. The results are shown in Table 2.
性能評価:
(1)フィラー残渣、熱かぶり
上記実施例1〜12及び比較例1〜8のソルダーレジスト組成物を、それぞれ銅張り基板上にスクリーン印刷で全面塗布し、熱風循環式乾燥炉において80℃で60分乾燥させ、スプレー圧0.2MPaの1質量%Na2CO3水溶液で1分間現像し、その塗膜表面の現像性を以下の基準で評価した。
Performance evaluation:
(1) Filler residue, hot fog The solder resist compositions of Examples 1 to 12 and Comparative Examples 1 to 8 were each coated on the entire surface of a copper-clad substrate by screen printing, and heated at 80 ° C. in a hot air circulating drying oven. The film was dried for a while and developed with a 1% by mass Na 2 CO 3 aqueous solution having a spray pressure of 0.2 MPa for 1 minute.
○:塗膜が完全に除去され、残渣なし。 ○: The coating film is completely removed and there is no residue.
△:ほんの僅かにフィラー残渣あり。 Δ: There is a slight filler residue.
×:塗膜の残渣あり。 X: There is a residue of the coating film.
(2)解像性
(黒)ライン/スペースが300/300、銅厚50μmの回路パターン基板をバフロール研磨後、水洗し、乾燥した後、これに前記実施例1〜3、7〜9、比較例1、2、5、6の各ソルダーレジスト組成物をスクリーン印刷法により塗布し、80℃の熱風循環式乾燥炉で30分乾燥させた。その後、メタルハライドランプで露光した。露光パタンーンは、ライン/スペースが100/300のネガフィルムを用い、露光量はソルダーレジスト組成物上500mJ/cm2となるように活性エネルギー線を照射した。露光後、現像(30℃、スプレー圧0.2MPa、1質量%Na2CO3)を60秒行って未露光部を除去することにより、パターンを形成し、次いで150℃×60分の熱硬化処理を施すことにより硬化塗膜を得た。このようにして得られた100μmラインパターンの線幅再現性を、アンダーカット/ネガ寸法として表わした。
(2) Resolution (Black) A circuit pattern board having a line / space of 300/300 and a copper thickness of 50 μm was polished with buffalo, washed with water, dried, and then compared with Examples 1 to 3 and 7 to 9. Each of the solder resist compositions of Examples 1, 2, 5, and 6 was applied by a screen printing method and dried for 30 minutes in a hot air circulation drying oven at 80 ° C. Then, it exposed with the metal halide lamp. As an exposure pattern, a negative film having a line / space of 100/300 was used, and an active energy ray was irradiated so that the exposure amount was 500 mJ / cm 2 on the solder resist composition. After exposure, development (30 ° C., spray pressure 0.2 MPa, 1 mass% Na 2 CO 3 ) is performed for 60 seconds to remove the unexposed areas, thereby forming a pattern, and then heat curing at 150 ° C. for 60 minutes. By performing the treatment, a cured coating film was obtained. The line width reproducibility of the 100 μm line pattern thus obtained was expressed as undercut / negative dimensions.
(白)ライン/スペースが300/300、銅厚50μmの回路パターン基板をバフロール研磨後、水洗し、乾燥した後、これに前記実施例4〜6、10〜12、比較例3、4、7、8の各ソルダーレジスト組成物をスクリーン印刷法により塗布し、80℃の熱風循環式乾燥炉で30分乾燥させた。その後、メタルハライドランプで露光した。露光パタンーンは、ライン/スペースが100/300のネガフィルムを用い、露光量は感光性樹脂組成物上500mJ/cm2となるように活性エネルギー線を照射した。露光後、現像(30℃、スプレー圧0.2MPa、1質量%Na2CO3)を60秒行って未露光部を除去することにより、パターンを形成し、次いで150℃×60分の熱硬化処理を施すことにより硬化塗膜を得た。このようにして得られた100μmラインパターンの線幅再現性を、ハレーション/ネガ寸法として表わした。 (White) A circuit pattern substrate having a line / space of 300/300 and a copper thickness of 50 μm was polished with buffalo, washed with water, and dried, followed by Examples 4-6, 10-12, and Comparative Examples 3, 4, 7 , 8 were applied by a screen printing method and dried in a hot air circulation drying oven at 80 ° C. for 30 minutes. Then, it exposed with the metal halide lamp. As the exposure pattern, a negative film having a line / space of 100/300 was used, and the active energy ray was irradiated so that the exposure amount was 500 mJ / cm 2 on the photosensitive resin composition. After exposure, development (30 ° C., spray pressure 0.2 MPa, 1 mass% Na 2 CO 3 ) is performed for 60 seconds to remove the unexposed areas, thereby forming a pattern, and then heat curing at 150 ° C. for 60 minutes. By performing the treatment, a cured coating film was obtained. The line width reproducibility of the 100 μm line pattern thus obtained was expressed as halation / negative dimensions.
(3)耐熱性
上記実施例1〜12及び比較例1〜8のソルダーレジスト組成物を、回路形成されたプリント配線板にスクリーン印刷でそれぞれ全面塗布し、熱風循環式乾燥炉で30分乾燥させた。これらの基板にソルダーレジストパターンが描かれたネガフィルムを当て、露光量は感光性樹脂組成物上500mJ/cm2の露光条件で露光し、スプレー圧0.2MPa、1質量%Na2CO3水溶液で1分間現像し、ソルダーレジストパターンを形成した。この基板を、150℃で60分熱硬化し、評価基板を作製した。テープピールテストを行い、レジスト層の膨れ・剥がれ・変色について評価した。
(3) Heat resistance Each of the solder resist compositions of Examples 1 to 12 and Comparative Examples 1 to 8 was applied on the entire surface of a printed wiring board on which a circuit was formed by screen printing, and then dried in a hot air circulation drying oven for 30 minutes. It was. A negative film on which a solder resist pattern is drawn is applied to these substrates, and the exposure amount is exposed on the photosensitive resin composition under the exposure condition of 500 mJ / cm 2 , and the spray pressure is 0.2 MPa and the 1 mass% Na 2 CO 3 aqueous solution. And developed for 1 minute to form a solder resist pattern. This substrate was thermally cured at 150 ° C. for 60 minutes to produce an evaluation substrate. A tape peel test was performed to evaluate the swelling, peeling, and discoloration of the resist layer.
○:全く変化が認められない。 ○: No change is observed at all.
△:ほんの僅か変色等の変化あり。 Δ: There is a slight change such as discoloration.
×:レジスト層の膨れ、剥がれあり。 X: Resist layer swelling and peeling.
(4)白化
実施例1〜3、7〜9、比較例1、2、5、6(黒色レジストのみ)について、耐熱性試験後、塗膜表面の白濁を目視で確認した。
(4) Whitening About Examples 1-3, 7-9, Comparative Examples 1, 2, 5, and 6 (only a black resist), the cloudiness of the coating-film surface was confirmed visually after the heat resistance test.
○:塗膜に変色なし。 ○: No discoloration in the coating film.
△:ほんの僅かに白濁変色あり。 Δ: Slightly cloudy discoloration.
×:塗膜全体が白濁。 X: The whole coating film becomes cloudy.
(5)反り
上記実施例1〜12及び比較例1〜8のソルダーレジスト組成物を、それぞれ基材厚0.06mmBT材エッチアウト(340×340)基板上にスクリーン印刷で約25μm(ドライ)片面塗布し、熱風循環式乾燥炉で30分乾燥させ、露光量はソルダーレジスト組成物上500mJ/cm2の露光条件で全面露光する。次いで、スプレー圧0.2MPa、1質量%Na2CO3水溶液で1分間現像し、熱風循環式乾燥炉において150℃×60分熱硬化し、評価基板を作製する。評価基板が充分に冷却されてから作製基板の反りを評価する。基板を平らな場所に置き、浮き上がっている基板端の高さを測定する。
(5) Warpage Each of the solder resist compositions of Examples 1 to 12 and Comparative Examples 1 to 8 was screen-printed on a base material thickness 0.06 mm BT material etch-out (340 × 340) substrate, about 25 μm (dry) on one side. It is applied and dried for 30 minutes in a hot air circulating drying furnace, and the entire surface is exposed under an exposure condition of 500 mJ / cm 2 on the solder resist composition. Then, spray pressure 0.2 MPa, development and 1 minute at 1 wt% Na 2 CO 3 aqueous solution, and cured 0.99 ° C. × 60 minutes heat at a hot-air circulating drying oven to prepare a test substrate. After the evaluation substrate is sufficiently cooled, the warp of the manufactured substrate is evaluated. Place the substrate on a flat surface and measure the height of the floating substrate edge.
○:評価基板の反りがそのままスクリーン印刷機でマーキング印刷可能な反り
(浮き高さ20mm未満)
△:浮き高さ20mm以上、基板の端と端が合わさる(基板が1周する)以下。
○: Warpage that can be printed on the screen printing machine with the warping of the evaluation board as it is (floating height less than 20 mm)
(Triangle | delta): The floating height is 20 mm or more, and the end of a board | substrate is match | combined (a board | substrate makes 1 round) or less.
×:基板の端と端が合わさる。(基板が1周する)
(6)動的粘弾性試験
試験方法:塗膜作製方法
上記実施例1〜12及び比較例1〜8のソルダーレジスト組成物をスクリーン印刷法により、25〜50μm(ドライ)になるようにフィルム上に塗布し、熱風循環式乾燥炉において80℃×30分乾燥させ、露光量は感光性樹脂組成物上500mJ/cm2の露光条件で全面露光する。次いで、スプレー圧0.2MPa、1質量%Na2CO3水溶液で1分間現像し、熱風循環式乾燥炉において150℃×60分熱硬化し、評価フィルムを作製する。フィルムから塗膜を採取し測定機器にセットする。
X: The edge of a board | substrate is match | combined. (The circuit board makes one round)
(6) Dynamic viscoelasticity test Test method: Coating film preparation method The solder resist compositions of Examples 1 to 12 and Comparative Examples 1 to 8 above are on the film so as to be 25 to 50 µm (dry) by screen printing. It is dried at 80 ° C. for 30 minutes in a hot air circulating drying oven, and the entire surface is exposed under an exposure condition of 500 mJ / cm 2 on the photosensitive resin composition. Then, spray pressure 0.2 MPa, development and 1 minute at 1 wt% Na 2 CO 3 aqueous solution, and cured 0.99 ° C. × 60 minutes heat at a hot-air circulating drying oven to prepare a test film. Collect the coating film from the film and set it on the measuring instrument.
測定装置/セイコーインスツルメンツ社製
形式:DMS6100
測定条件/測定温度:20〜300℃
昇温速度:5℃/分
周波数:1、10Hz
変形モード:引っ張り・正弦波モード
測定塗膜サイズ:10mm×5mm
JIS K7244−4に記載の試験方法により動的粘弾性試験を行い、E’(貯蔵弾性率)、E”(損失弾性率)を得、これらから上述した手法に従い本発明の架橋密度(n)、およびガラス転移温度(Tg)が求められる。結果を表2に示す。
Format: DMS6100
Measurement conditions / temperature: 20 to 300 ° C
Temperature increase rate: 5 ° C / min
Frequency: 1, 10Hz
Deformation mode: Pull / Sine wave mode
Measurement film size: 10 mm x 5 mm
A dynamic viscoelasticity test is performed by the test method described in JIS K7244-4 to obtain E ′ (storage elastic modulus) and E ″ (loss elastic modulus). And the glass transition temperature (Tg) are shown in Table 2.
表2から明らかなように、本発明のソルダーレジスト組成物は、薄板に関しても反りを最小限に抑えつつ、ソルダーレジストとして求められる性能に優れていることがわかる。 As is apparent from Table 2, it can be seen that the solder resist composition of the present invention is excellent in performance required as a solder resist while minimizing warping even for thin plates.
Claims (7)
n=E’min/3ΦRT (1)
式中、nは架橋密度、E’minは貯蔵弾性率E’の最小値、Φはフロント係数≒1、Rは気体定数、TはE’minの絶対温度を表わす。 Solder resist composition characterized by having a crosslinking density after curing calculated by the formula (1) of 2 × 10 3 to 1.2 × 10 4 mol / m 3 and a glass transition temperature of 100 ° C. or higher. object.
n = E'min / 3ΦRT (1)
In the formula, n represents the crosslink density, E′min represents the minimum value of the storage elastic modulus E ′, Φ represents the front coefficient≈1, R represents the gas constant, and T represents the absolute temperature of E′min.
(A−2)ノボラック型エポキシ化合物(e)と不飽和モノカルボン酸(c)とのエステル化物の水酸基に多塩基酸無水物(d)を反応させて得られる感光性樹脂、
(B)光重合開始剤、
(C)希釈剤、及び
(D)1分子中に少なくとも2個のエポキシ基を有する多官能エポキシ化合物、
を含有することを特徴とする請求項1に記載のソルダーレジスト組成物。 (A-1) An epoxy compound (a) having two or more epoxy groups in one molecule, and a compound having one reactive group that reacts with one or more alcoholic hydroxyl groups and an epoxy group in one molecule ( a carboxyl group-containing photosensitive resin obtained by reacting b) with an unsaturated monocarboxylic acid (c) and reacting the resulting reaction product with a polybasic acid anhydride (d),
(A-2) a photosensitive resin obtained by reacting a polybasic acid anhydride (d) with a hydroxyl group of an esterified product of a novolak-type epoxy compound (e) and an unsaturated monocarboxylic acid (c),
(B) a photopolymerization initiator,
(C) a diluent, and (D) a polyfunctional epoxy compound having at least two epoxy groups in one molecule,
The solder resist composition according to claim 1, comprising:
(A−2)ノボラック型エポキシ化合物(e)と不飽和モノカルボン酸(c)とのエステル化物の水酸基に多塩基酸無水物(d)を反応させて得られる感光性樹脂、
(B)光重合開始剤、
(C)希釈剤、
(D)1分子中に少なくとも2個のエポキシ基を有する多官能エポキシ化合物、及び
(E)白色または黒色の着色剤
を含有することを特徴とするソルダーレジスト組成物。 (A-1) An epoxy compound (a) having two or more epoxy groups in one molecule, and a compound having one reactive group that reacts with one or more alcoholic hydroxyl groups and an epoxy group in one molecule ( a carboxyl group-containing photosensitive resin obtained by reacting b) with an unsaturated monocarboxylic acid (c) and reacting the resulting reaction product with a polybasic acid anhydride (d),
(A-2) a photosensitive resin obtained by reacting a polybasic acid anhydride (d) with a hydroxyl group of an esterified product of a novolak-type epoxy compound (e) and an unsaturated monocarboxylic acid (c),
(B) a photopolymerization initiator,
(C) Diluent,
(D) A polyfunctional epoxy compound having at least two epoxy groups in one molecule, and (E) a solder resist composition containing a white or black colorant.
n=E’min/3ΦRT (1)
式中、nは架橋密度、E’minは貯蔵弾性率E’の最小値、Φはフロント係数≒1、Rは気体定数、TはE’minの絶対温度を表わす。 A solder resist characterized by comprising a cured product having a crosslinking density calculated by the formula (1) of 2 × 10 3 to 1.2 × 10 4 mol / m 3 and a glass transition temperature of 100 ° C. or higher. layer.
n = E'min / 3ΦRT (1)
In the formula, n represents the crosslink density, E′min represents the minimum value of the storage elastic modulus E ′, Φ represents the front coefficient≈1, R represents the gas constant, and T represents the absolute temperature of E′min.
(A−1)1分子中に2個以上のエポキシ基を有するエポキシ化合物(a)と、1分子中に1個以上のアルコール性水酸基とエポキシ基と反応する1個の反応基を有する化合物(b)と、不飽和モノカルボン酸(c)とを反応させ、得られた反応生成物に多塩基酸無水物(d)を反応させて得られるカルボキシル基含有感光性樹脂、
(A−2)ノボラック型エポキシ化合物(e)と不飽和モノカルボン酸(c)とのエステル化物の水酸基に多塩基酸無水物(d)を反応させて得られる感光性樹脂、
(B)光重合開始剤、
(C)希釈剤、
(D)1分子中に少なくとも2個のエポキシ基を有する多官能エポキシ化合物、及び
(E)白色または黒色の着色剤
を含有するソルダーレジスト組成物を硬化してなることを特徴とするソルダーレジスト層。 The solder resist layer according to claim 5,
(A-1) An epoxy compound (a) having two or more epoxy groups in one molecule, and a compound having one reactive group that reacts with one or more alcoholic hydroxyl groups and an epoxy group in one molecule ( a carboxyl group-containing photosensitive resin obtained by reacting b) with an unsaturated monocarboxylic acid (c) and reacting the resulting reaction product with a polybasic acid anhydride (d),
(A-2) a photosensitive resin obtained by reacting a polybasic acid anhydride (d) with a hydroxyl group of an esterified product of a novolak-type epoxy compound (e) and an unsaturated monocarboxylic acid (c),
(B) a photopolymerization initiator,
(C) Diluent,
(D) A solder resist layer obtained by curing a solder resist composition containing a polyfunctional epoxy compound having at least two epoxy groups in one molecule, and (E) a white or black colorant. .
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Also Published As
Publication number | Publication date |
---|---|
HK1121816A1 (en) | 2009-04-30 |
KR100973643B1 (en) | 2010-08-02 |
JP4994922B2 (en) | 2012-08-08 |
CN101281367B (en) | 2011-07-06 |
CN101281367A (en) | 2008-10-08 |
KR20080091035A (en) | 2008-10-09 |
TW200905384A (en) | 2009-02-01 |
TWI399614B (en) | 2013-06-21 |
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