JP2008256632A - Testing method and ic tester of semiconductor integrated circuit - Google Patents
Testing method and ic tester of semiconductor integrated circuit Download PDFInfo
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- JP2008256632A JP2008256632A JP2007101334A JP2007101334A JP2008256632A JP 2008256632 A JP2008256632 A JP 2008256632A JP 2007101334 A JP2007101334 A JP 2007101334A JP 2007101334 A JP2007101334 A JP 2007101334A JP 2008256632 A JP2008256632 A JP 2008256632A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 39
- 238000012360 testing method Methods 0.000 title claims abstract description 20
- 238000005259 measurement Methods 0.000 claims description 24
- 238000010998 test method Methods 0.000 claims description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000000428 dust Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/50—Testing of electric apparatus, lines, cables or components for short-circuits, continuity, leakage current or incorrect line connections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
Abstract
Description
本発明は、半導体集積回路、例えば、液晶駆動ドライバのピン間ショートを検出する半導体集積回路の試験方法及びICテスタに関するものである。 The present invention relates to a test method and an IC tester for a semiconductor integrated circuit, for example, a semiconductor integrated circuit for detecting a short circuit between pins of a liquid crystal drive driver.
ICテスタは、半導体集積回路に信号を出力し、半導体集積回路の出力により良否の判定を行っている。また、ICテスタは、例えば、下記特許文献1に示されているように、半導体集積回路のピン間ショートの判定を行っている。 The IC tester outputs a signal to the semiconductor integrated circuit, and determines whether it is good or bad by the output of the semiconductor integrated circuit. In addition, the IC tester performs a determination of a short circuit between pins of the semiconductor integrated circuit, for example, as disclosed in Patent Document 1 below.
このような装置を図3に示し説明する。
図3において、被試験対象(以下DUTと略す)10は、例えば、液晶駆動ドライバで、図4に示されるように、TABテープ11に、半導体集積回路12が搭載され、半導体集積回路12が複数のピン13に配線(図示せず)を介して接続されている。DC測定部20は、ICテスタに設けられ、DUT10のピンごとに接続し、直流電圧出力または直流電流測定を行う。制御部30は、DC測定部20の制御とピン間ショートの判定を行う。ピン間抵抗Rは、DUT10のピン間の抵抗成分を示す。なお、ピン間ショート以外の試験のための構成は省略している。
Such an apparatus is shown and described in FIG.
In FIG. 3, an object to be tested (hereinafter abbreviated as DUT) 10 is, for example, a liquid crystal drive driver. As shown in FIG. 4, a semiconductor integrated circuit 12 is mounted on a TAB tape 11, and a plurality of semiconductor integrated circuits 12 are provided. The
このような装置のピン間ショート試験動作を説明する。DC測定部20が、制御部30の制御により、DUT10の所望ピンに電圧出力し、この所望ピンの隣接するDUT10のピンを、DC測定部20が測定する。ピン間ショートの場合、ピン間抵抗Rが低く、ピン間ショートでない場合、ピン間ショート抵抗Rが高くなるので、制御部30は、DC測定部20が測定する電流が所望の値より大きいときピン間ショートと判定する。
The pin-to-pin short test operation of such a device will be described. The
近年、液晶ディスプレイの大型化、画素数の上昇により、液晶駆動ドライバが約700ピンと多ピン化し、ピン間ピッチが約30μmで、ピン間の隙間は約10μmと狭くなってきている。このため、図5(a)に示すように、埃やチリなどの異物14がピン間に付着し、完全なショートな状態だけでなく、図5(b)に示すように、異物14が僅かに他方のピンに接触しない状態が発生し、試験時はピン間ショートがなく、DUT10が良品と判定されても、その後、僅かな隙間がショートして、不良となってしまうという問題点があった。
In recent years, the liquid crystal display driver has increased in size and the number of pixels, so that the liquid crystal driving driver has about 700 pins, the pin-to-pin pitch is about 30 μm, and the gap between pins is narrowed to about 10 μm. For this reason, as shown in FIG. 5 (a), foreign matter 14 such as dust or dust adheres between the pins, and not only is a complete short-circuited state, but also the foreign matter 14 is slightly present as shown in FIG. 5 (b). The other pin does not contact the other pin, and there is no short circuit between the pins during the test, and even if the
そこで、本発明の目的は、完全なショートでなくとも、ピン間ショートの検出が行える半導体集積回路の試験方法及びICテスタを実現することにある。 SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to realize a semiconductor integrated circuit test method and an IC tester that can detect pin-to-pin shorts, even if they are not completely short-circuited.
このような課題を達成するために、本発明のうち請求項1記載の発明は、
複数のピンを有する半導体集積回路のピン間ショートを検出する半導体集積回路の試験方法において、
ICテスタまたは前記半導体集積回路が、前記半導体集積回路の所望ピンにパルスまたはステップ信号を発生し、
前記ICテスタが、前記所望ピンに隣接する前記半導体集積回路のピンからの波形によりピン間ショートの判定を行うことを特徴とするものである。
請求項2記載の発明は、請求項1記載の発明であって、
ICテスタが、判定タイミングで、波形が判定値より大きいとき、ピン間ショートと判定することを特徴とするものである。
請求項3記載の発明は、
複数のピンを有する半導体集積回路を試験するICテスタにおいて、
前記半導体集積回路の所望ピンにパルスまたはステップ信号を発生し、この所望ピンに隣接する隣接ピンの波形によりピン間ショートを判定する試験部を設けたことを特徴とするものである。
請求項4記載の発明は、請求項3記載の発明であって、
試験部が、判定タイミングで、波形が判定値より大きいとき、ピン間ショートと判定することを特徴とするものである。
請求項5記載の発明は、請求項3または4記載の発明であって、
試験部は、
所望ピンにパルスまたはステップ信号を発生するパルス発生部と、
隣接ピンを測定する測定部と
を有するものである。
In order to achieve such a problem, the invention according to claim 1 of the present invention is:
In a semiconductor integrated circuit test method for detecting a short circuit between pins of a semiconductor integrated circuit having a plurality of pins,
An IC tester or the semiconductor integrated circuit generates a pulse or a step signal at a desired pin of the semiconductor integrated circuit;
The IC tester may determine a pin-to-pin short according to a waveform from a pin of the semiconductor integrated circuit adjacent to the desired pin.
Invention of Claim 2 is invention of Claim 1, Comprising:
The IC tester determines that the pin is short-circuited when the waveform is larger than the determination value at the determination timing.
The invention described in claim 3
In an IC tester for testing a semiconductor integrated circuit having a plurality of pins,
A test unit is provided that generates a pulse or a step signal at a desired pin of the semiconductor integrated circuit and determines a pin-to-pin short according to the waveform of an adjacent pin adjacent to the desired pin.
Invention of Claim 4 is invention of Claim 3, Comprising:
When the waveform is larger than the determination value at the determination timing, the test unit determines that the pin is short-circuited.
Invention of Claim 5 is invention of Claim 3 or 4, Comprising:
The testing department
A pulse generator for generating a pulse or step signal on a desired pin;
And a measuring unit for measuring adjacent pins.
本発明によれば以下のような効果がある。
請求項1,2によれば、ICテスタまたは半導体集積回路が半導体集積回路の所望ピンにパルスまたはステップ信号を与え、ICテスタが所望ピンに隣接する半導体集積回路のピンの波形によりピン間ショートの判定を行うので、完全なショートでなくとも、ピン間ショートを検出することができる。
The present invention has the following effects.
According to the first and second aspects, the IC tester or the semiconductor integrated circuit gives a pulse or a step signal to a desired pin of the semiconductor integrated circuit, and the IC tester causes a short circuit between the pins by the waveform of the pin of the semiconductor integrated circuit adjacent to the desired pin. Since the determination is performed, it is possible to detect a pin-to-pin short even if it is not a complete short.
請求項3〜5によれば、試験部が半導体集積回路の所望ピンにパルスまたはステップ信号を与え、試験部が所望ピンに隣接する半導体集積回路の隣接ピンの波形によりピン間ショートを判定するので、完全なショートでなくとも、ピン間ショートを検出することができる。 According to the third to fifth aspects, the test unit gives a pulse or a step signal to a desired pin of the semiconductor integrated circuit, and the test unit determines a pin-to-pin short by the waveform of the adjacent pin of the semiconductor integrated circuit adjacent to the desired pin. Even if it is not a complete short circuit, a pin-to-pin short circuit can be detected.
以下本発明を、図面を用いて詳細に説明する。図1は本発明の一実施例を示した構成図である。 Hereinafter, the present invention will be described in detail with reference to the drawings. FIG. 1 is a block diagram showing an embodiment of the present invention.
図1において、DUT10は、例えば、液晶駆動ドライバで、図4に示されるように、TABテープ11に、半導体集積回路12が搭載され、半導体集積回路12が複数のピン13に配線(図示せず)を介して接続されている。試験部40は、ICテスタに設けられ、DUT10の複数ピンに電気的に接続し、DUT10の所望ピンにパルスを発生し、この所望ピンに隣接する隣接ピンの波形によりピン間ショートを判定する。試験部40は、DUT10のピンごとに、パルス発生部41、測定部42を設け、制御部43を設ける。パルス発生部41は例えばアクティブロード回路で、所望ピンにパルスを発生する。測定部42は例えばA/D変換部で、隣接ピンを測定する。制御部43は、パルス発生部41、測定部42を制御し、測定部42の測定結果により、ピン間ショートの判定を行う。ピン間容量Cは、DUT10のピン間の容量成分を示す。なお、ピン間ショート以外の試験のための構成は省略している。
In FIG. 1, a
このような装置の動作を説明する。図2は、DUT10の隣接ピンの波形例を示した図である。ある。
パルス発生部41が、制御部43の制御により、DUT10の所望ピンにパルスを出力し、この所望ピンの隣接するDUT10のピンを、測定部42が測定する。ピン間ショートでない場合、図2の波形aのようになり、図5(b)に示すように、異物14が僅かに他方のピンに接触しない場合、図2の波形bのようになるので、制御部43は、ストローブ(判定タイミング)で、測定部42の測定結果が判定値より大きいとき、ピン間ショートと判定する。制御部43は、ストローブで、測定部42の測定結果が判定値より小さいとき、ピン間ショートと判定しない。ここで、測定結果が判定値と同一の場合をピン間ショートにするかどうかはどちらでもよい。なお、完全なピン間ショートの場合、波形bのように変化しないが、パルスがそのまま測定部42に入力されるので、判定値より大きくなることはいうまでもない。つまり、ピン間ショートと判定される。
The operation of such an apparatus will be described. FIG. 2 is a diagram illustrating a waveform example of adjacent pins of the
The
このように、パルス発生部41がDUT10の所望ピンにパルスを与え、測定部42が所望ピンに隣接するDUT10の隣接ピンを測定し、この測定結果により、制御部43がピン間ショートの判定を行うので、完全なショートでなくとも、ピン間ショートを検出することができる。
In this way, the
なお、本発明はこれに限定されるものではなく、測定部42はA/D変換部を示したが、コンパレータでも、A/D変換部とこのA/D変換部の出力を入力するデジタルコンパレータとの組み合わせでもよい。この場合、制御部43で、ピン間ショートの判定は不要となる。また、測定部43内に、ピン間ショートを判定する構成を含めてもよい。
Note that the present invention is not limited to this, and the
また、パルス発生部41がパルスを発生する構成を示したが、ステップ信号でもよい。
Moreover, although the structure which the
また、パルス発生部41を設けた構成を示したが、DUT10自身に所望のピンにパルスまたはステップ信号を出力させ、隣接ピンを測定部43で測定する構成としてもよい。
Moreover, although the structure which provided the
10 DUT
12 半導体集積回路
13 ピン
40 試験部
41 パルス発生部
42 測定部
10 DUT
12
Claims (5)
ICテスタまたは前記半導体集積回路が、前記半導体集積回路の所望ピンにパルスまたはステップ信号を発生し、
前記ICテスタが、前記所望ピンに隣接する前記半導体集積回路のピンからの波形によりピン間ショートの判定を行うことを特徴とする半導体集積回路の試験方法。 In a semiconductor integrated circuit test method for detecting a short circuit between pins of a semiconductor integrated circuit having a plurality of pins,
An IC tester or the semiconductor integrated circuit generates a pulse or a step signal at a desired pin of the semiconductor integrated circuit;
A test method for a semiconductor integrated circuit, wherein the IC tester determines a pin-to-pin short according to a waveform from a pin of the semiconductor integrated circuit adjacent to the desired pin.
前記半導体集積回路の所望ピンにパルスまたはステップ信号を発生し、この所望ピンに隣接する隣接ピンの波形によりピン間ショートを判定する試験部を設けたことを特徴とするICテスタ。 In an IC tester for testing a semiconductor integrated circuit having a plurality of pins,
An IC tester comprising a test unit for generating a pulse or a step signal at a desired pin of the semiconductor integrated circuit and determining a pin-to-pin short according to a waveform of an adjacent pin adjacent to the desired pin.
所望ピンにパルスまたはステップ信号を発生するパルス発生部と、
隣接ピンを測定する測定部と
を有する請求項3または4記載のICテスタ。 The testing department
A pulse generator for generating a pulse or step signal on a desired pin;
The IC tester according to claim 3, further comprising a measurement unit that measures adjacent pins.
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JP2007101334A JP4978779B2 (en) | 2007-04-09 | 2007-04-09 | Semiconductor integrated circuit test method and IC tester |
KR1020070055950A KR101045036B1 (en) | 2007-04-09 | 2007-06-08 | Ic tester |
TW096127710A TWI333079B (en) | 2007-04-09 | 2007-07-30 | Testing method for semiconductor integrated circuit and ic tester thereof |
CNA2007101371757A CN101285864A (en) | 2007-04-09 | 2007-07-30 | Testing method of semiconductor integrated circuit and integrated circuit tester |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2009128082A (en) * | 2007-11-21 | 2009-06-11 | Yokogawa Electric Corp | Ic tester, and test method of liquid crystal drive driver |
CN102244378A (en) * | 2010-05-11 | 2011-11-16 | 立锜科技股份有限公司 | Device and method for protecting IC (integrated circuit) |
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CN101697003B (en) * | 2009-11-06 | 2011-08-03 | 烽火通信科技股份有限公司 | Short circuit detecting method and short circuit detecting device |
CN103544911A (en) * | 2012-07-17 | 2014-01-29 | 东莞万士达液晶显示器有限公司 | Electronic device |
TWI461715B (en) * | 2012-12-06 | 2014-11-21 | Wistron Corp | Testing apparatus and testing method of electronic device |
TWI618937B (en) * | 2016-12-27 | 2018-03-21 | 瑞昱半導體股份有限公司 | Integrated circuit test method |
CN106771832B (en) | 2017-02-23 | 2019-08-16 | 京东方科技集团股份有限公司 | Its display device of a kind of circuit checker, circuit detecting method and application |
US20210041488A1 (en) * | 2019-08-11 | 2021-02-11 | Nuvoton Technology Corporation | Measuring Input Capacitance with Automatic Test Equipment (ATE) |
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- 2007-06-08 KR KR1020070055950A patent/KR101045036B1/en active IP Right Grant
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JPH04128665A (en) * | 1990-09-19 | 1992-04-30 | Nec Yamagata Ltd | Open/contact detecting device for semiconductor device |
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JP2009128082A (en) * | 2007-11-21 | 2009-06-11 | Yokogawa Electric Corp | Ic tester, and test method of liquid crystal drive driver |
CN102244378A (en) * | 2010-05-11 | 2011-11-16 | 立锜科技股份有限公司 | Device and method for protecting IC (integrated circuit) |
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CN101285864A (en) | 2008-10-15 |
TW200841029A (en) | 2008-10-16 |
JP4978779B2 (en) | 2012-07-18 |
TWI333079B (en) | 2010-11-11 |
KR20080091693A (en) | 2008-10-14 |
KR101045036B1 (en) | 2011-06-30 |
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