JP2008256572A5 - - Google Patents

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Publication number
JP2008256572A5
JP2008256572A5 JP2007100029A JP2007100029A JP2008256572A5 JP 2008256572 A5 JP2008256572 A5 JP 2008256572A5 JP 2007100029 A JP2007100029 A JP 2007100029A JP 2007100029 A JP2007100029 A JP 2007100029A JP 2008256572 A5 JP2008256572 A5 JP 2008256572A5
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JP
Japan
Prior art keywords
electron beam
sample
application apparatus
beam application
resistance value
Prior art date
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Granted
Application number
JP2007100029A
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English (en)
Japanese (ja)
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JP2008256572A (ja
JP5103050B2 (ja
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Publication date
Application filed filed Critical
Priority to JP2007100029A priority Critical patent/JP5103050B2/ja
Priority claimed from JP2007100029A external-priority patent/JP5103050B2/ja
Priority to US12/062,940 priority patent/US7633303B2/en
Publication of JP2008256572A publication Critical patent/JP2008256572A/ja
Publication of JP2008256572A5 publication Critical patent/JP2008256572A5/ja
Application granted granted Critical
Publication of JP5103050B2 publication Critical patent/JP5103050B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2007100029A 2007-04-06 2007-04-06 電子線応用装置 Expired - Fee Related JP5103050B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007100029A JP5103050B2 (ja) 2007-04-06 2007-04-06 電子線応用装置
US12/062,940 US7633303B2 (en) 2007-04-06 2008-04-04 Semiconductor wafer inspection apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007100029A JP5103050B2 (ja) 2007-04-06 2007-04-06 電子線応用装置

Publications (3)

Publication Number Publication Date
JP2008256572A JP2008256572A (ja) 2008-10-23
JP2008256572A5 true JP2008256572A5 (cg-RX-API-DMAC7.html) 2010-05-13
JP5103050B2 JP5103050B2 (ja) 2012-12-19

Family

ID=39826401

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007100029A Expired - Fee Related JP5103050B2 (ja) 2007-04-06 2007-04-06 電子線応用装置

Country Status (2)

Country Link
US (1) US7633303B2 (cg-RX-API-DMAC7.html)
JP (1) JP5103050B2 (cg-RX-API-DMAC7.html)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD612879S1 (en) * 1920-10-18 2010-03-30 Tokyo Electron Limited Semiconductor wafer inspection apparatus
JP6219747B2 (ja) * 2014-02-25 2017-10-25 日本電子株式会社 荷電粒子線描画装置
JP7034867B2 (ja) * 2018-08-31 2022-03-14 株式会社ニューフレアテクノロジー 異常判定方法および描画装置
JP7203593B2 (ja) * 2018-12-25 2023-01-13 東京エレクトロン株式会社 基板処理装置及び基板処理方法
CN113767459B (zh) * 2019-05-15 2023-08-11 株式会社日立高新技术 检查装置调整系统以及检查装置调整方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3036734A1 (de) * 1980-09-29 1982-05-06 Siemens AG, 1000 Berlin und 8000 München Verfahren zur messung von widerstaenden und kapazitaeten von elektronischen bauelementen
DE3677034D1 (de) * 1985-03-11 1991-02-28 Nippon Telegraph & Telephone Methode und geraet zum testen eines integrierten elektronischen bauteils.
US4695794A (en) * 1985-05-31 1987-09-22 Santa Barbara Research Center Voltage calibration in E-beam probe using optical flooding
JPH0682718B2 (ja) * 1985-08-12 1994-10-19 日本電信電話株式会社 電子デバイスの試験装置およびその使用方法
JP2834243B2 (ja) 1989-12-22 1998-12-09 株式会社日立製作所 電子線描画における帯電防止方法
US6002792A (en) * 1993-11-16 1999-12-14 Hamamatsu Photonics Kk Semiconductor device inspection system
US6172363B1 (en) * 1996-03-05 2001-01-09 Hitachi, Ltd. Method and apparatus for inspecting integrated circuit pattern
US6344750B1 (en) * 1999-01-08 2002-02-05 Schlumberger Technologies, Inc. Voltage contrast method for semiconductor inspection using low voltage particle beam
JP2000314710A (ja) * 1999-04-28 2000-11-14 Hitachi Ltd 回路パターンの検査方法及び検査装置
JP4625376B2 (ja) * 2000-02-22 2011-02-02 株式会社日立製作所 電子ビームによる検査方法
JP3711244B2 (ja) * 2001-01-18 2005-11-02 株式会社東芝 ウエハの欠陥検査装置
JP2002252275A (ja) * 2001-02-27 2002-09-06 Riipuru:Kk ウエハの導通機構、導通方法及び電子ビーム近接露光装置
JP3955450B2 (ja) * 2001-09-27 2007-08-08 株式会社ルネサステクノロジ 試料検査方法
JP3859480B2 (ja) * 2001-10-17 2006-12-20 株式会社ルネサステクノロジ 検査方法
JP2006013049A (ja) * 2004-06-24 2006-01-12 Tokyo Seimitsu Co Ltd 試料接地機構、試料接地方法、及び電子線露光装置
JP2006105960A (ja) * 2004-09-13 2006-04-20 Jeol Ltd 試料検査方法及び試料検査装置
JP2006114385A (ja) * 2004-10-15 2006-04-27 Toshiba Corp 電子ビーム装置

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