JP2008252034A5 - - Google Patents

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Publication number
JP2008252034A5
JP2008252034A5 JP2007094824A JP2007094824A JP2008252034A5 JP 2008252034 A5 JP2008252034 A5 JP 2008252034A5 JP 2007094824 A JP2007094824 A JP 2007094824A JP 2007094824 A JP2007094824 A JP 2007094824A JP 2008252034 A5 JP2008252034 A5 JP 2008252034A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2007094824A
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JP5292716B2 (ja
JP2008252034A (ja
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Priority to JP2007094824A priority Critical patent/JP5292716B2/ja
Priority claimed from JP2007094824A external-priority patent/JP5292716B2/ja
Priority to EP08153474.5A priority patent/EP1976016B1/en
Priority to US12/059,708 priority patent/US7795622B2/en
Publication of JP2008252034A publication Critical patent/JP2008252034A/ja
Publication of JP2008252034A5 publication Critical patent/JP2008252034A5/ja
Application granted granted Critical
Publication of JP5292716B2 publication Critical patent/JP5292716B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2007094824A 2007-03-30 2007-03-30 化合物半導体装置 Expired - Fee Related JP5292716B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2007094824A JP5292716B2 (ja) 2007-03-30 2007-03-30 化合物半導体装置
EP08153474.5A EP1976016B1 (en) 2007-03-30 2008-03-27 Compound semiconductor device
US12/059,708 US7795622B2 (en) 2007-03-30 2008-03-31 Compound semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007094824A JP5292716B2 (ja) 2007-03-30 2007-03-30 化合物半導体装置

Publications (3)

Publication Number Publication Date
JP2008252034A JP2008252034A (ja) 2008-10-16
JP2008252034A5 true JP2008252034A5 (ja) 2010-04-08
JP5292716B2 JP5292716B2 (ja) 2013-09-18

Family

ID=39575579

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007094824A Expired - Fee Related JP5292716B2 (ja) 2007-03-30 2007-03-30 化合物半導体装置

Country Status (3)

Country Link
US (1) US7795622B2 (ja)
EP (1) EP1976016B1 (ja)
JP (1) JP5292716B2 (ja)

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JP5562579B2 (ja) * 2009-05-12 2014-07-30 日本碍子株式会社 半導体素子用エピタキシャル基板の作製方法
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US8389977B2 (en) 2009-12-10 2013-03-05 Transphorm Inc. Reverse side engineered III-nitride devices
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US8742460B2 (en) 2010-12-15 2014-06-03 Transphorm Inc. Transistors with isolation regions
US8643062B2 (en) 2011-02-02 2014-02-04 Transphorm Inc. III-N device structures and methods
US8772842B2 (en) 2011-03-04 2014-07-08 Transphorm, Inc. Semiconductor diodes with low reverse bias currents
US8716141B2 (en) 2011-03-04 2014-05-06 Transphorm Inc. Electrode configurations for semiconductor devices
TWI587512B (zh) * 2011-05-16 2017-06-11 Renesas Electronics Corp Field effect transistor and semiconductor device
JP2013038157A (ja) * 2011-08-05 2013-02-21 Covalent Materials Corp 化合物半導体基板
US8901604B2 (en) 2011-09-06 2014-12-02 Transphorm Inc. Semiconductor devices with guard rings
US9257547B2 (en) 2011-09-13 2016-02-09 Transphorm Inc. III-N device structures having a non-insulating substrate
US8598937B2 (en) 2011-10-07 2013-12-03 Transphorm Inc. High power semiconductor electronic components with increased reliability
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US9165766B2 (en) 2012-02-03 2015-10-20 Transphorm Inc. Buffer layer structures suited for III-nitride devices with foreign substrates
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JP6054620B2 (ja) * 2012-03-29 2016-12-27 トランスフォーム・ジャパン株式会社 化合物半導体装置及びその製造方法
US9093366B2 (en) 2012-04-09 2015-07-28 Transphorm Inc. N-polar III-nitride transistors
US9184275B2 (en) 2012-06-27 2015-11-10 Transphorm Inc. Semiconductor devices with integrated hole collectors
US9608085B2 (en) * 2012-10-01 2017-03-28 Cree, Inc. Predisposed high electron mobility transistor
US9171730B2 (en) 2013-02-15 2015-10-27 Transphorm Inc. Electrodes for semiconductor devices and methods of forming the same
US9087718B2 (en) 2013-03-13 2015-07-21 Transphorm Inc. Enhancement-mode III-nitride devices
US9245992B2 (en) 2013-03-15 2016-01-26 Transphorm Inc. Carbon doping semiconductor devices
US9443938B2 (en) 2013-07-19 2016-09-13 Transphorm Inc. III-nitride transistor including a p-type depleting layer
JP2015095605A (ja) * 2013-11-13 2015-05-18 住友電気工業株式会社 半導体装置および半導体基板
WO2015147858A1 (en) * 2014-03-28 2015-10-01 Intel Corporation Selective epitaxially grown iii-v materials based devices
US9318593B2 (en) 2014-07-21 2016-04-19 Transphorm Inc. Forming enhancement mode III-nitride devices
US9620598B2 (en) * 2014-08-05 2017-04-11 Semiconductor Components Industries, Llc Electronic device including a channel layer including gallium nitride
US9536966B2 (en) 2014-12-16 2017-01-03 Transphorm Inc. Gate structures for III-N devices
US9536967B2 (en) 2014-12-16 2017-01-03 Transphorm Inc. Recessed ohmic contacts in a III-N device
JP6084254B2 (ja) * 2015-06-03 2017-02-22 クアーズテック株式会社 化合物半導体基板
JP6888013B2 (ja) 2016-01-15 2021-06-16 トランスフォーム テクノロジー，インコーポレーテッド ＡＬ（１−ｘ）Ｓｉ（ｘ）Ｏゲート絶縁体を有するエンハンスメントモードＩＩＩ族窒化物デバイス
US10224401B2 (en) 2016-05-31 2019-03-05 Transphorm Inc. III-nitride devices including a graded depleting layer
JP6966689B2 (ja) 2017-03-31 2021-11-17 富士通株式会社 窒化物半導体装置及びその製造方法
JP6926798B2 (ja) * 2017-08-04 2021-08-25 富士通株式会社 化合物半導体装置、化合物半導体装置の製造方法、電源装置、及び高周波増幅器
CN109524460B (zh) * 2017-09-19 2022-05-17 世界先进积体电路股份有限公司 高空穴移动率晶体管
US10256332B1 (en) * 2017-10-27 2019-04-09 Vanguard International Semiconductor Corporation High hole mobility transistor
TWI780167B (zh) * 2018-06-26 2022-10-11 晶元光電股份有限公司 半導體基底以及半導體元件
JP7450446B2 (ja) 2020-04-13 2024-03-15 株式会社アドバンテスト 半導体装置、半導体装置の製造方法、および試験装置

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CA2456662A1 (en) * 2001-08-07 2003-02-20 Jan Kuzmik High electron mobility devices
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US20050133816A1 (en) * 2003-12-19 2005-06-23 Zhaoyang Fan III-nitride quantum-well field effect transistors
JP2006032524A (ja) * 2004-07-14 2006-02-02 Nippon Telegr & Teleph Corp <Ntt> 窒化物半導体ヘテロ構造電界効果トランジスタ構造とその作製法
JP2006114653A (ja) 2004-10-14 2006-04-27 Hitachi Cable Ltd 半導体エピタキシャルウェハ及び電界効果トランジスタ
JP4832768B2 (ja) * 2005-02-09 2011-12-07 日本電信電話株式会社 半導体装置
US7615774B2 (en) * 2005-04-29 2009-11-10 Cree.Inc. Aluminum free group III-nitride based high electron mobility transistors
JP4232112B2 (ja) 2005-09-29 2009-03-04 株式会社ダイフク 物品搬送設備

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