JP2008244194A - 電子ビーム描画装置及び電子ビーム描画方法 - Google Patents

電子ビーム描画装置及び電子ビーム描画方法 Download PDF

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Publication number
JP2008244194A
JP2008244194A JP2007083464A JP2007083464A JP2008244194A JP 2008244194 A JP2008244194 A JP 2008244194A JP 2007083464 A JP2007083464 A JP 2007083464A JP 2007083464 A JP2007083464 A JP 2007083464A JP 2008244194 A JP2008244194 A JP 2008244194A
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Japan
Prior art keywords
electron beam
pattern
deflector
shape
shot
Prior art date
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Pending
Application number
JP2007083464A
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English (en)
Japanese (ja)
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JP2008244194A5 (enExample
Inventor
Rieko Nishimura
理恵子 西村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nuflare Technology Inc
Original Assignee
Nuflare Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nuflare Technology Inc filed Critical Nuflare Technology Inc
Priority to JP2007083464A priority Critical patent/JP2008244194A/ja
Priority to US12/055,669 priority patent/US7777205B2/en
Priority to KR1020080028115A priority patent/KR100952026B1/ko
Publication of JP2008244194A publication Critical patent/JP2008244194A/ja
Publication of JP2008244194A5 publication Critical patent/JP2008244194A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H01J37/3023—Programme control
    • H01J37/3026—Patterning strategy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/143—Electron beam

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electron Beam Exposure (AREA)
JP2007083464A 2007-03-28 2007-03-28 電子ビーム描画装置及び電子ビーム描画方法 Pending JP2008244194A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2007083464A JP2008244194A (ja) 2007-03-28 2007-03-28 電子ビーム描画装置及び電子ビーム描画方法
US12/055,669 US7777205B2 (en) 2007-03-28 2008-03-26 Electron beam lithography system
KR1020080028115A KR100952026B1 (ko) 2007-03-28 2008-03-27 전자 빔 묘화 장치 및 전자 빔 묘화 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007083464A JP2008244194A (ja) 2007-03-28 2007-03-28 電子ビーム描画装置及び電子ビーム描画方法

Publications (2)

Publication Number Publication Date
JP2008244194A true JP2008244194A (ja) 2008-10-09
JP2008244194A5 JP2008244194A5 (enExample) 2010-05-06

Family

ID=39792610

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007083464A Pending JP2008244194A (ja) 2007-03-28 2007-03-28 電子ビーム描画装置及び電子ビーム描画方法

Country Status (3)

Country Link
US (1) US7777205B2 (enExample)
JP (1) JP2008244194A (enExample)
KR (1) KR100952026B1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101310462B1 (ko) 2012-02-10 2013-09-25 이병화 음식물쓰레기 종량제 수거장치의 투입량 감지장치
JP5896775B2 (ja) * 2012-02-16 2016-03-30 株式会社ニューフレアテクノロジー 電子ビーム描画装置および電子ビーム描画方法
JP2013201239A (ja) * 2012-03-23 2013-10-03 Toshiba Corp 描画パターン形成方法、描画データ生成方法および描画データ生成装置
US11199774B2 (en) * 2020-03-30 2021-12-14 Canon Kabushiki Kaisha Method and apparatus to improve frame cure imaging resolution for extrusion control

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02138723A (ja) * 1987-12-18 1990-05-28 Hitachi Ltd 電子線描画装置及び描画方法
JPH10284392A (ja) * 1997-03-31 1998-10-23 Toshiba Corp 荷電ビーム描画方法
JPH11224840A (ja) * 1998-02-04 1999-08-17 Nikon Corp 荷電粒子線露光装置および露光方法
JP2005129850A (ja) * 2003-10-27 2005-05-19 Toshiba Corp 荷電ビーム描画装置及び描画方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6262429B1 (en) * 1999-01-06 2001-07-17 Etec Systems, Inc. Raster shaped beam, electron beam exposure strategy using a two dimensional multipixel flash field
JP2005079392A (ja) 2003-09-01 2005-03-24 Toshiba Mach Co Ltd 描画データ作成方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02138723A (ja) * 1987-12-18 1990-05-28 Hitachi Ltd 電子線描画装置及び描画方法
JPH10284392A (ja) * 1997-03-31 1998-10-23 Toshiba Corp 荷電ビーム描画方法
JPH11224840A (ja) * 1998-02-04 1999-08-17 Nikon Corp 荷電粒子線露光装置および露光方法
JP2005129850A (ja) * 2003-10-27 2005-05-19 Toshiba Corp 荷電ビーム描画装置及び描画方法

Also Published As

Publication number Publication date
US7777205B2 (en) 2010-08-17
US20080237493A1 (en) 2008-10-02
KR20080088435A (ko) 2008-10-02
KR100952026B1 (ko) 2010-04-08

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