JP2008236528A - 過電流検出回路および半導体装置 - Google Patents
過電流検出回路および半導体装置 Download PDFInfo
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- JP2008236528A JP2008236528A JP2007074943A JP2007074943A JP2008236528A JP 2008236528 A JP2008236528 A JP 2008236528A JP 2007074943 A JP2007074943 A JP 2007074943A JP 2007074943 A JP2007074943 A JP 2007074943A JP 2008236528 A JP2008236528 A JP 2008236528A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/18—Modifications for indicating state of switch
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/74—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
- H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/06—Modifications for ensuring a fully conducting state
- H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/14—Modifications for compensating variations of physical values, e.g. of temperature
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- Electronic Switches (AREA)
- Amplifiers (AREA)
- Power Conversion In General (AREA)
Abstract
【解決手段】制御回路20は、NMOSトランジスタNM0と出力端子OUT間を接続するワイヤ17に流れる負荷電流Iaとワイヤ17の抵抗分とによってワイヤ17の両端に生じる電位差を検出し、電位差が所定値より大きくなった場合に負過電流Iaを制限するようにNMOSトランジスタNM0を制御する。制御回路20は、一端から電流源I1によって電流を順方向に流すと共に他端をワイヤ17の一端に接続するダイオード群21と、一端から電流源I2によって電流を順方向に流すと共に他端をワイヤ17の他端に接続するダイオード群22と、を備え、ワイヤ17の抵抗分の温度変化によって生じる出力電流制限値の変化が少なくなるように、ダイオード群21、22の一端間の電位差に基づいて所定値を補正する。
【選択図】図1
Description
L・k/q・(T+273)・ln(M・I/X/Is)−L・k/q・(T+273)・ln(N・I/Y/Is)=Ia・R・{1+tc・(T−25)} −−−−−式(1)
ただし、kはボルツマン定数、qは電子運動エネルギー、Tは摂氏温度、Isはダイオードの飽和電流、tcはワイヤ17を構成する金属の温度係数である。
Ia=L・k/q・(T+273)・ln(M・Y/N/X)/R/{1+tc・(T−25)} −−−−−式(2)
11 バッテリ
12 負荷
15 昇圧回路
17、18a、18b、19 ワイヤ
20、20a 制御回路
21、22 ダイオード群
30 IPDチップ
AMP 増幅器
I1、I2 電流源
Ia 負荷電流
GND、IN、OUT、Vcc 端子
MN0、NM1、NM2、MN3 NMOSトランジスタ
Claims (7)
- 出力端子と、
前記出力端子を介して負荷に出力電流を流す出力トランジスタと、
前記出力トランジスタに接続され前記出力電流が流れる金属配線と、
前記金属配線に流れる前記出力電流と前記金属配線の抵抗とによって前記金属配線の両端に生じる電位差を検出し、該電位差が所定値より大きくなった場合に前記出力電流を制限するように出力トランジスタを制御する制御回路と、
を備え、
前記制御回路は、
第1および第2の電流源と、
一端から前記第1の電流源によって電流を順方向に流すと共に、他端を前記金属配線の一端に接続する第1のダイオード群と、
一端から前記第2の電流源によって電流を順方向に流すと共に、他端を前記金属配線の他端に接続する第2のダイオード群と、
を備えると共に、前記金属配線の抵抗の温度変化によって生じる出力電流制限値の変化が少なくなるように、前記第1および第2のダイオード群の一端間の電位差に基づいて前記所定値を補正する構成とされることを特徴とする過電流検出回路。 - 前記第1のダイオード群は、アノードおよびカソードをそれぞれ共通に並列接続したX(Xは1以上の整数)個のダイオードを一組としてL(Lは1以上の整数)組を順方向に直列に接続すると共に、カソード端を前記金属配線の一端に接続し、
前記第2のダイオード群は、アノードおよびカソードをそれぞれ共通に並列接続したY(Yは1以上の整数)個のダイオードを一組としてL組を順方向に直列に接続すると共に、カソード端を前記金属配線の他端に接続し、
前記金属配線の他端の電位が前記金属配線の一端の電位よりも高く、前記第1および第2の電流源の電流値比をM:N(M、Nは正数)とする場合、M・Y/N/X>1を満たすように構成することを特徴とする請求項1記載の過電流検出回路。 - 前記制御回路は、
前記第1のダイオード群のアノード端にソースを接続し、前記第1の電流源にドレインおよびゲートを接続する第1のMOSトランジスタと、
前記第2のダイオード群のアノード端にソースを接続し、前記第2の電流源にドレインを接続し、ゲートを前記第1のMOSトランジスタのゲートと接続する第2のMOSトランジスタと、
ゲートを前記第2のMOSトランジスタのドレインと接続し、ソースを前記金属配線の一端または他端に接続し、ドレインを前記出力トランジスタの制御端に接続する第3のMOSトランジスタと、
を備え、
前記第1、第2および第3のMOSトランジスタは、同一の導電型であって、
前記第3のMOSトランジスタは、前記電位差が前記所定値より大きくなった場合に前記出力電流を制限するように前記出力トランジスタを制御することを特徴とする請求項2記載の過電流検出回路。 - 前記出力トランジスタは、ハイサイドスイッチまたはローサイドスイッチとして機能するNMOSトランジスタであることを特徴とする請求項1または3記載の過電流検出回路。
- 請求項1乃至4のいずれか一記載の過電流検出回路を含むことを特徴とする半導体装置。
- 前記第1および第2のダイオード群と前記金属配線とは、近接して配設されることを特徴とする請求項5記載の半導体装置。
- 前記金属配線は、銅、銀、金、アルミニウム、およびこれらの少なくとも一つを主成分とする合金のいずれかで構成されるボンディングワイヤであって、前記出力端子は、該ボンディングワイヤが接続されるリードフレームとして構成されることを特徴とする請求項5または6記載の半導体装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007074943A JP4919847B2 (ja) | 2007-03-22 | 2007-03-22 | 過電流検出回路および半導体装置 |
US12/076,404 US7660091B2 (en) | 2007-03-22 | 2008-03-18 | Overcurrent detecting circuit and semiconductor device |
EP08005171A EP1973229B1 (en) | 2007-03-22 | 2008-03-19 | Overcurrent detecting circuit and semiconductor device |
DE602008001453T DE602008001453D1 (de) | 2007-03-22 | 2008-03-19 | Überstromerkennungsschaltung und Halbleitervorrichtung |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007074943A JP4919847B2 (ja) | 2007-03-22 | 2007-03-22 | 過電流検出回路および半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008236528A true JP2008236528A (ja) | 2008-10-02 |
JP4919847B2 JP4919847B2 (ja) | 2012-04-18 |
Family
ID=39523517
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2007074943A Expired - Fee Related JP4919847B2 (ja) | 2007-03-22 | 2007-03-22 | 過電流検出回路および半導体装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7660091B2 (ja) |
EP (1) | EP1973229B1 (ja) |
JP (1) | JP4919847B2 (ja) |
DE (1) | DE602008001453D1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2355354A1 (en) | 2010-02-10 | 2011-08-10 | Renesas Electronics Corporation | Current limiting circuit |
JP2011200035A (ja) * | 2010-03-19 | 2011-10-06 | Aisin Seiki Co Ltd | 車両用過電流検出装置 |
JP2013066085A (ja) * | 2011-09-19 | 2013-04-11 | Denso Corp | 過電流保護回路 |
US9087714B2 (en) | 2010-09-01 | 2015-07-21 | Ricoh Electronic Devices Co., Ltd. | Semiconductor integrated circuit and semiconductor integrated circuit apparatus |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4929020B2 (ja) * | 2007-04-10 | 2012-05-09 | 矢崎総業株式会社 | 負荷回路の過電流保護装置 |
CN102035165B (zh) * | 2009-09-29 | 2014-07-30 | 意法半导体研发(上海)有限公司 | 用于短路保护的系统和方法 |
US10193326B2 (en) * | 2016-04-21 | 2019-01-29 | Continental Automotive Systems, Inc. | Non-intrusive short-circuit protection for power supply devices |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH03119812A (ja) * | 1989-10-02 | 1991-05-22 | Toshiba Corp | 電流検出回路 |
JPH11121683A (ja) * | 1997-10-08 | 1999-04-30 | Nissan Motor Co Ltd | 半導体集積回路 |
JP2000213992A (ja) * | 1999-01-26 | 2000-08-04 | Nissan Motor Co Ltd | 温度検出回路及び半導体装置 |
JP2001267899A (ja) * | 2000-03-16 | 2001-09-28 | Denso Corp | 負荷駆動回路 |
JP2003114726A (ja) * | 2001-10-05 | 2003-04-18 | Toshiba Corp | 半導体集積回路 |
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US5018041A (en) | 1989-06-16 | 1991-05-21 | National Semiconductor Corp. | Circuit for internal current limiting in a fast high side power switch |
JPH0348737A (ja) | 1989-07-17 | 1991-03-01 | Nec Corp | 温度検出回路 |
JPH06216307A (ja) | 1993-01-13 | 1994-08-05 | Mitsubishi Electric Corp | 樹脂封止型半導体装置 |
JP3427436B2 (ja) * | 1993-09-16 | 2003-07-14 | 株式会社デンソー | 駆動回路 |
DE4429716C1 (de) | 1994-08-22 | 1996-02-01 | Siemens Ag | Schaltungsanordnung zur Strombegrenzung |
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JP3656412B2 (ja) * | 1998-07-03 | 2005-06-08 | 株式会社日立製作所 | 車両用電力制御装置 |
US6351360B1 (en) * | 1999-09-20 | 2002-02-26 | National Semiconductor Corporation | Apparatus for selective shutdown of devices of an integrated circuit in response to thermal fault detection |
JP2004080087A (ja) | 2002-08-09 | 2004-03-11 | Renesas Technology Corp | 過電流検出回路 |
US6867573B1 (en) * | 2003-11-07 | 2005-03-15 | National Semiconductor Corporation | Temperature calibrated over-current protection circuit for linear voltage regulators |
US7499253B2 (en) * | 2005-03-07 | 2009-03-03 | Rohm Co., Ltd. | Semiconductor integrated-circuit unit with temperature protective circuit |
JP2008198821A (ja) * | 2007-02-14 | 2008-08-28 | Ricoh Co Ltd | 過熱保護回路を備える定電圧回路を内蔵した半導体装置 |
-
2007
- 2007-03-22 JP JP2007074943A patent/JP4919847B2/ja not_active Expired - Fee Related
-
2008
- 2008-03-18 US US12/076,404 patent/US7660091B2/en not_active Expired - Fee Related
- 2008-03-19 EP EP08005171A patent/EP1973229B1/en not_active Expired - Fee Related
- 2008-03-19 DE DE602008001453T patent/DE602008001453D1/de active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH03119812A (ja) * | 1989-10-02 | 1991-05-22 | Toshiba Corp | 電流検出回路 |
JPH11121683A (ja) * | 1997-10-08 | 1999-04-30 | Nissan Motor Co Ltd | 半導体集積回路 |
JP2000213992A (ja) * | 1999-01-26 | 2000-08-04 | Nissan Motor Co Ltd | 温度検出回路及び半導体装置 |
JP2001267899A (ja) * | 2000-03-16 | 2001-09-28 | Denso Corp | 負荷駆動回路 |
JP2003114726A (ja) * | 2001-10-05 | 2003-04-18 | Toshiba Corp | 半導体集積回路 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2355354A1 (en) | 2010-02-10 | 2011-08-10 | Renesas Electronics Corporation | Current limiting circuit |
JP2011166518A (ja) * | 2010-02-10 | 2011-08-25 | Renesas Electronics Corp | 電流制限回路 |
US8493702B2 (en) | 2010-02-10 | 2013-07-23 | Renesas Electronics Corporation | Current limiting circuit |
US8879227B2 (en) | 2010-02-10 | 2014-11-04 | Renesas Electronics Corporation | Current limiting circuit |
JP2011200035A (ja) * | 2010-03-19 | 2011-10-06 | Aisin Seiki Co Ltd | 車両用過電流検出装置 |
US9087714B2 (en) | 2010-09-01 | 2015-07-21 | Ricoh Electronic Devices Co., Ltd. | Semiconductor integrated circuit and semiconductor integrated circuit apparatus |
JP2013066085A (ja) * | 2011-09-19 | 2013-04-11 | Denso Corp | 過電流保護回路 |
Also Published As
Publication number | Publication date |
---|---|
US7660091B2 (en) | 2010-02-09 |
DE602008001453D1 (de) | 2010-07-22 |
EP1973229A1 (en) | 2008-09-24 |
US20080232017A1 (en) | 2008-09-25 |
EP1973229B1 (en) | 2010-06-09 |
JP4919847B2 (ja) | 2012-04-18 |
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