JP2008211185A - 記憶素子及び半導体装置 - Google Patents

記憶素子及び半導体装置 Download PDF

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Publication number
JP2008211185A
JP2008211185A JP2008007503A JP2008007503A JP2008211185A JP 2008211185 A JP2008211185 A JP 2008211185A JP 2008007503 A JP2008007503 A JP 2008007503A JP 2008007503 A JP2008007503 A JP 2008007503A JP 2008211185 A JP2008211185 A JP 2008211185A
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Japan
Prior art keywords
layer
conductive layer
memory element
memory
conductive
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JP2008007503A
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Japanese (ja)
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JP2008211185A5 (enExample
Inventor
Kensuke Yoshizumi
健輔 吉住
Noriko Harima
典子 針馬
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2008007503A priority Critical patent/JP2008211185A/ja
Publication of JP2008211185A publication Critical patent/JP2008211185A/ja
Publication of JP2008211185A5 publication Critical patent/JP2008211185A5/ja
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JP2008007503A 2007-02-02 2008-01-17 記憶素子及び半導体装置 Withdrawn JP2008211185A (ja)

Priority Applications (1)

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JP2008007503A JP2008211185A (ja) 2007-02-02 2008-01-17 記憶素子及び半導体装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007024860 2007-02-02
JP2008007503A JP2008211185A (ja) 2007-02-02 2008-01-17 記憶素子及び半導体装置

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JP2008211185A true JP2008211185A (ja) 2008-09-11
JP2008211185A5 JP2008211185A5 (enExample) 2011-02-24

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JP2008007503A Withdrawn JP2008211185A (ja) 2007-02-02 2008-01-17 記憶素子及び半導体装置

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8278138B2 (en) 2010-05-10 2012-10-02 Electronics And Telecommunications Research Institute Resistive memory device and method of fabricating the same
JP2013258411A (ja) * 2010-01-29 2013-12-26 Semiconductor Energy Lab Co Ltd 半導体装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5834824A (en) * 1994-02-08 1998-11-10 Prolinx Labs Corporation Use of conductive particles in a nonconductive body as an integrated circuit antifuse
JP2006352104A (ja) * 2005-05-20 2006-12-28 Semiconductor Energy Lab Co Ltd 半導体装置、及び半導体装置の作製方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5834824A (en) * 1994-02-08 1998-11-10 Prolinx Labs Corporation Use of conductive particles in a nonconductive body as an integrated circuit antifuse
JP2006352104A (ja) * 2005-05-20 2006-12-28 Semiconductor Energy Lab Co Ltd 半導体装置、及び半導体装置の作製方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013258411A (ja) * 2010-01-29 2013-12-26 Semiconductor Energy Lab Co Ltd 半導体装置
US8278138B2 (en) 2010-05-10 2012-10-02 Electronics And Telecommunications Research Institute Resistive memory device and method of fabricating the same

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