JP2008211112A5 - - Google Patents

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Publication number
JP2008211112A5
JP2008211112A5 JP2007048426A JP2007048426A JP2008211112A5 JP 2008211112 A5 JP2008211112 A5 JP 2008211112A5 JP 2007048426 A JP2007048426 A JP 2007048426A JP 2007048426 A JP2007048426 A JP 2007048426A JP 2008211112 A5 JP2008211112 A5 JP 2008211112A5
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JP
Japan
Prior art keywords
nitride semiconductor
protective film
semiconductor laser
thick film
resonator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007048426A
Other languages
English (en)
Japanese (ja)
Other versions
JP5681338B2 (ja
JP2008211112A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2007048426A external-priority patent/JP5681338B2/ja
Priority to JP2007048426A priority Critical patent/JP5681338B2/ja
Priority to US12/033,404 priority patent/US7764722B2/en
Priority to EP09158504A priority patent/EP2086076B1/en
Priority to EP08151908A priority patent/EP1962395B1/en
Priority to KR1020080016891A priority patent/KR101407885B1/ko
Priority to CN2008100808963A priority patent/CN101257186B/zh
Publication of JP2008211112A publication Critical patent/JP2008211112A/ja
Publication of JP2008211112A5 publication Critical patent/JP2008211112A5/ja
Publication of JP5681338B2 publication Critical patent/JP5681338B2/ja
Application granted granted Critical
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2007048426A 2007-02-26 2007-02-28 窒化物半導体レーザ素子 Active JP5681338B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2007048426A JP5681338B2 (ja) 2007-02-28 2007-02-28 窒化物半導体レーザ素子
US12/033,404 US7764722B2 (en) 2007-02-26 2008-02-19 Nitride semiconductor laser element
KR1020080016891A KR101407885B1 (ko) 2007-02-26 2008-02-25 질화물 반도체 레이저 소자
EP08151908A EP1962395B1 (en) 2007-02-26 2008-02-25 Nitride semiconductor laser element
EP09158504A EP2086076B1 (en) 2007-02-26 2008-02-25 Nitride semiconductor laser element
CN2008100808963A CN101257186B (zh) 2007-02-26 2008-02-26 氮化物半导体激光器元件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007048426A JP5681338B2 (ja) 2007-02-28 2007-02-28 窒化物半導体レーザ素子

Publications (3)

Publication Number Publication Date
JP2008211112A JP2008211112A (ja) 2008-09-11
JP2008211112A5 true JP2008211112A5 (https=) 2010-03-25
JP5681338B2 JP5681338B2 (ja) 2015-03-04

Family

ID=39787135

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007048426A Active JP5681338B2 (ja) 2007-02-26 2007-02-28 窒化物半導体レーザ素子

Country Status (1)

Country Link
JP (1) JP5681338B2 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5572919B2 (ja) * 2007-06-07 2014-08-20 日亜化学工業株式会社 窒化物半導体レーザ素子

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3381073B2 (ja) * 1992-09-28 2003-02-24 ソニー株式会社 半導体レーザ装置とその製造方法
JP3211775B2 (ja) * 1997-09-26 2001-09-25 日本電気株式会社 分布帰還型半導体レーザの製造方法
JP2004072004A (ja) * 2002-08-09 2004-03-04 Keiji Tanaka マイクロレンズ付発光素子およびその形成方法
JP4529372B2 (ja) * 2003-04-23 2010-08-25 日亜化学工業株式会社 半導体レーザ素子
JP4451371B2 (ja) * 2004-12-20 2010-04-14 シャープ株式会社 窒化物半導体レーザ素子
JP4734923B2 (ja) * 2005-01-06 2011-07-27 ソニー株式会社 半導体レーザの製造方法
JP5285835B2 (ja) * 2005-07-13 2013-09-11 株式会社東芝 半導体素子およびその製造方法

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