JP2008205135A - Multilayer ceramic capacitor and capacitor mounting circuit board - Google Patents

Multilayer ceramic capacitor and capacitor mounting circuit board Download PDF

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JP2008205135A
JP2008205135A JP2007038620A JP2007038620A JP2008205135A JP 2008205135 A JP2008205135 A JP 2008205135A JP 2007038620 A JP2007038620 A JP 2007038620A JP 2007038620 A JP2007038620 A JP 2007038620A JP 2008205135 A JP2008205135 A JP 2008205135A
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electrodes
internal electrode
internal
multilayer ceramic
ceramic capacitor
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Yusuke Abe
優介 阿部
Takashi Tomita
隆 富田
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Taiyo Yuden Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a multilayer ceramic capacitor capable of suppressing the propagation of the mechanical vibration because of an electrostriction phenomenon. <P>SOLUTION: The ceramic capacitor 10 includes an internal electrodes opposed region OP wherein counterpart internal electrodes 12a and 12b connected to mutually different external electrodes 16a and 16b are opposed in a chip body 15 formed by laminating alternately a plurality of dielectric layers and a plurality of nearly rectangular internal electrodes, and an internal electrode led out region LE wherein each of the internal electrodes in the internal electrodes opposed region OP is led out to the external electrode. Notches 14a and 14b are formed in the internal electrode led out region LE, respectively. Accordingly, when an AC voltage is applied between the external electrodes, even if the dielectric layer between the opposed internal electrodes in the internal electrodes opposed region repeats alternately expansion and contraction, the displacement in the surface direction caused by the expansion and the contraction is buffered by the notches, so that the displacements of the external electrodes in the surface direction are suppressed. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、積層セラミックコンデンサ及び該積層セラミックコンデンサを搭載したコンデンサ実装回路基板に関し、さらに詳細には、電歪現象によって生じる震動の伝播を抑制し、雑音を低減した積層セラミックコンデンサ及びコンデンサ実装回路基板に関する。 The present invention relates to a multilayer ceramic capacitor and a capacitor-mounted circuit board on which the multilayer ceramic capacitor is mounted. More specifically, the present invention relates to a multilayer ceramic capacitor and a capacitor-mounted circuit board that suppresses propagation of vibration caused by electrostriction and reduces noise. About.

大きな静電容量を得ることができる積層セラミックコンデンサには、誘電体材料としてチタン酸バリウムなどの強誘電体材料が一般的に用いられている。強誘電体材料を用いた積層セラミックコンデンサに交流電圧が印加されると、対向する電極間に挟まれた誘電体層には電歪現象により厚み方向と面方向とに交互に膨張と収縮とを生じ、これが積層セラミックコンデンサ単体、及び該積層セラミックコンデンサが搭載されたコンデンサ実装回路基板に震動を発生させ、雑音の原因となりやすい。 Ferroelectric materials such as barium titanate are generally used as dielectric materials for multilayer ceramic capacitors capable of obtaining a large capacitance. When an AC voltage is applied to a monolithic ceramic capacitor using a ferroelectric material, the dielectric layer sandwiched between the opposing electrodes expands and contracts alternately in the thickness and plane directions due to electrostriction. This causes vibration in the multilayer ceramic capacitor alone and the capacitor-mounted circuit board on which the multilayer ceramic capacitor is mounted, which tends to cause noise.

積層セラミックコンデンサの電歪現象による機械的振動の対策として、本明細書の図14に示すように、特許文献1には、セラミック積層体に穴を設け、この穴を震動の節とすることによって、共振周波数を高周波側に移行させることが提案されている。また、特許文献2には、コンデンサ素子の端子電極に、金属材により形成された一対の金属端子を当接して震動の伝播を抑える電子部品が提案されている。
特開平11−26288号公報 特開平2004−288847号公報
As a countermeasure against mechanical vibration due to the electrostriction phenomenon of the multilayer ceramic capacitor, as shown in FIG. 14 of this specification, in Patent Document 1, a hole is formed in the ceramic multilayer body, and this hole is used as a vibration node. It has been proposed to shift the resonance frequency to the high frequency side. Further, Patent Document 2 proposes an electronic component that suppresses propagation of vibrations by contacting a pair of metal terminals formed of a metal material with terminal electrodes of a capacitor element.
JP-A-11-26288 Japanese Patent Laid-Open No. 2004-288847

近年、薄型の電子機器のニーズが高まり、これらの電子機器に搭載される回路基板が薄型化されることが多くなっている。このため、積層セラミックコンデンサの僅かな機械的振動であっても、これが搭載される回路基板に撓み振動が生じやすくなっている。ところが、背景技術の前者に記載の積層セラミックコンデンサにおいては、発生した震動の伝播を抑制する機能を有さなかった。また、背景技術の後者に記載の電子部品においては、金属端子を当接する分だけ部品高さが高くなり、薄型の電子機器への搭載が難しいという課題があった。 In recent years, the need for thin electronic devices has increased, and circuit boards mounted on these electronic devices have been increasingly thinned. For this reason, even a slight mechanical vibration of the multilayer ceramic capacitor tends to cause flexural vibration on the circuit board on which it is mounted. However, the multilayer ceramic capacitor described in the former of the background art did not have a function of suppressing propagation of the generated vibration. In addition, in the electronic component described in the latter of the background art, there is a problem that the component height is increased by the amount of contact with the metal terminal, and it is difficult to mount the electronic component on a thin electronic device.

本発明の目的は、上記課題を解決して、電歪現象による機械的振動の伝播を抑制しつつ、薄型の電子機器に搭載される回路基板にも実装することが可能な積層セラミックコンデンサを提供することにある。また、本発明の目的は、上記課題を解決して、電歪による機械的振動の伝播を抑制して雑音の発生を抑制することが可能なコンデンサ実装回路基板を提供することにある。 An object of the present invention is to provide a multilayer ceramic capacitor that can be mounted on a circuit board mounted on a thin electronic device while suppressing the propagation of mechanical vibration due to an electrostrictive phenomenon by solving the above-described problems. There is to do. Another object of the present invention is to provide a capacitor-mounted circuit board capable of solving the above-described problems and suppressing the generation of noise by suppressing the propagation of mechanical vibration due to electrostriction.

前記目的を達成するため、本発明の積層セラミックコンデンサは、(1)複数の誘電体層と複数の略長方形状の内部電極とを交互に積層してなるチップ本体と、このチップ本体の表面に形成され、かつ外部の回路基板のランド電極に接続する一対の外部電極とからなり、前記複数の内部電極が前記一対の外部電極に交互に電気的に接続された積層セラミックコンデンサにおいて、前記チップ本体における、前記一対の外部電極のうちの互いに異なる外部電極に接続される内部電極同士が前記誘電体層を挟んで対向する内部電極対向領域と、前記内部電極対向領域の前記各内部電極が前記外部電極に交互に引き出される内部電極引出し領域と、のうち、前記内部電極引出し領域にそれぞれ切欠きが形成されていることを特徴とする。(・・・以下第1の課題解決手段と称する。) In order to achieve the above object, a multilayer ceramic capacitor according to the present invention includes (1) a chip body in which a plurality of dielectric layers and a plurality of substantially rectangular internal electrodes are alternately stacked, and a surface of the chip body. In the multilayer ceramic capacitor formed and formed of a pair of external electrodes connected to land electrodes of an external circuit board, wherein the plurality of internal electrodes are alternately electrically connected to the pair of external electrodes, the chip body In which the internal electrodes connected to different external electrodes of the pair of external electrodes are opposed to each other across the dielectric layer, and the internal electrodes in the internal electrode facing region are external to each other. Of the internal electrode extraction regions that are alternately extracted to the electrodes, notches are formed in the internal electrode extraction regions, respectively. (... hereinafter referred to as first problem solving means)

また、上記積層セラミックコンデンサの主要な形態の一つは、(2)前記内部電極引出し領域の前記切欠きの周囲に内部電極が存在しないマージン領域を設けたものである。(・・・以下第2の課題解決手段と称する。) One of the main forms of the multilayer ceramic capacitor is that (2) a margin region in which no internal electrode exists is provided around the notch in the internal electrode lead-out region. (... hereinafter referred to as second problem solving means)

また、上記積層セラミックコンデンサの他の主要な形態の一つは、(3)前記内部電極引出し領域の前記切欠きの内部に絶縁性樹脂が充填されたものである。(・・・以下第3の課題解決手段と称する。) One of the other main forms of the multilayer ceramic capacitor is (3) an insulating resin filled in the notch in the internal electrode lead-out region. (... hereinafter referred to as third problem solving means)

また、本発明のコンデンサ実装回路基板は、(4)前記(1)〜(3)のうちのいずれかに記載の積層セラミックコンデンサの外部電極が回路基板のランド電極に導電固着されているものである。(・・・以下第4の課題解決手段と称する。) The capacitor-mounted circuit board of the present invention is (4) in which the external electrode of the multilayer ceramic capacitor according to any one of (1) to (3) is conductively fixed to the land electrode of the circuit board. is there. (... hereinafter referred to as fourth problem solving means)

上記第1の課題解決手段による作用は次の通りである。すなわち、前記チップ本体における、前記一対の外部電極のうちの互いに異なる外部電極に接続される内部電極同士が前記誘電体層を挟んで対向する内部電極対向領域と、前記内部電極対向領域の前記各内部電極が前記外部電極に交互に引き出される内部電極引出し領域と、のうち、前記内部電極引出し領域にそれぞれ切欠きが形成されている。このため、前記積層セラミックコンデンサの外部電極間に交流電圧を印加した際に、内部電極対向領域の対向する内部電極間の誘電体層が該誘電体層の面方向に交互に膨張・収縮を繰り返しても、該膨張・収縮による面方向の変位が前記切欠きにより緩衝され、外部電極の前記面方向への変位が抑制される。また、前記積層セラミックコンデンサが搭載されたコンデンサ実装回路基板は、前記外部電極にハンダ等により導電固着された一対のランド電極の間隔寸法の変化が抑制される。このため、前記コンデンサ実装回路基板の厚み方向の撓み震動の発生が抑制され、該回路基板のたわみ震動に伴う雑音の発生が抑制される。 The operation of the first problem solving means is as follows. That is, in the chip body, the internal electrodes connected to different external electrodes of the pair of external electrodes are opposed to each other across the dielectric layer, and each of the internal electrode facing regions Of the internal electrode extraction regions where the internal electrodes are alternately extracted to the external electrodes, notches are formed in the internal electrode extraction regions. For this reason, when an AC voltage is applied between the external electrodes of the multilayer ceramic capacitor, the dielectric layer between the opposing internal electrodes in the internal electrode facing region repeatedly expands and contracts alternately in the plane direction of the dielectric layer. However, the displacement in the surface direction due to the expansion / contraction is buffered by the notch, and the displacement of the external electrode in the surface direction is suppressed. Further, in the capacitor-mounted circuit board on which the multilayer ceramic capacitor is mounted, a change in the distance between the pair of land electrodes conductively fixed to the external electrodes by solder or the like is suppressed. For this reason, generation | occurrence | production of the bending vibration of the thickness direction of the said capacitor | condenser mounting circuit board is suppressed, and generation | occurrence | production of the noise accompanying the bending vibration of this circuit board is suppressed.

上記第2の課題解決手段による作用は次の通りである。すなわち、前記内部電極引出し領域の前記切欠きの周囲に内部電極が存在しないマージン領域を設けたので、内部電極間のショートを防止することができる。 The operation of the second problem solving means is as follows. That is, since a margin region where no internal electrode exists is provided around the notch in the internal electrode lead-out region, it is possible to prevent a short circuit between the internal electrodes.

上記第3の課題解決手段による作用は次の通りである。すなわち、前記内部電極引出し領域の前記切欠きの内部に絶縁性樹脂が充填されたので、積層セラミックコンデンサのチップ本体の強度低下が防止されるとともに、実装時のノズルによる吸着ミスの発生が防止され、ハンドリングが容易になる。 The operation of the third problem solving means is as follows. That is, since the inside of the notch in the internal electrode lead-out region is filled with an insulating resin, the strength of the chip body of the multilayer ceramic capacitor is prevented from being lowered, and the occurrence of a suction error by the nozzle during mounting is prevented. , Handling becomes easy.

上記第4の課題解決手段による作用は次の通りである。すなわち、上記(1)〜(3)のいずれかに記載の積層セラミックコンデンサの外部電極が回路基板のランド電極に導電固着されているので、コンデンサ実装回路基板の雑音の発生を抑制することができる。 The operation of the fourth problem solving means is as follows. That is, since the external electrode of the multilayer ceramic capacitor according to any one of (1) to (3) is conductively fixed to the land electrode of the circuit board, generation of noise on the capacitor-mounted circuit board can be suppressed. .

本発明の積層セラミックコンデンサによれば、端子電極間に交流電圧を印加した際に、内部電極対向領域の対向する電極間の誘電体層が該誘電体層の面方向に交互に膨張・収縮を繰り返しても、該膨張・収縮による面方向の変位が前記切欠きにより緩衝されるので、外部電極の前記面方向への変位が抑制される。また、本発明のコンデンサ実装回路基板によれば、前記積層セラミックコンデンサが搭載されたコンデンサ実装回路基板は、外部電極間に交流電圧を印加した際に、内部電極対向領域の対向する内部電極間の誘電体層が該誘電体層の面方向に交互に膨張・収縮を繰り返しても、該膨張・収縮による面方向の変位が前記切欠きにより緩衝されるので、前記外部電極にハンダ等により導電固着された一対のランド電極の間隔寸法の変化が抑制され、前記回路基板の厚み方向の撓み震動の発生が抑制され、該基板のたわみ震動に伴う雑音の発生が抑制される。本発明の前記目的とそれ以外の目的、構成特徴、作用効果は、以下の説明と添付図面によって明らかとなろう。 According to the multilayer ceramic capacitor of the present invention, when an AC voltage is applied between the terminal electrodes, the dielectric layer between the opposing electrodes in the internal electrode facing region alternately expands and contracts in the plane direction of the dielectric layer. Even if it repeats, since the displacement of the surface direction by this expansion and contraction is buffered by the notch, the displacement of the external electrode in the surface direction is suppressed. According to the capacitor-mounted circuit board of the present invention, the capacitor-mounted circuit board on which the multilayer ceramic capacitor is mounted is formed between the opposing internal electrodes in the internal electrode facing region when an AC voltage is applied between the external electrodes. Even if the dielectric layer repeats expansion and contraction alternately in the surface direction of the dielectric layer, the displacement in the surface direction due to the expansion and contraction is buffered by the notch, so that the external electrode is electrically fixed by soldering or the like. The change in the distance between the pair of land electrodes is suppressed, the occurrence of flexural vibration in the thickness direction of the circuit board is suppressed, and the generation of noise accompanying the flexural vibration of the board is suppressed. The above object and other objects, structural features, and operational effects of the present invention will become apparent from the following description and the accompanying drawings.

以下、本発明の積層セラミックコンデンサの第1の実施形態について、図1〜図3を参照して説明する。図1は第1の実施形態の積層セラミックコンデンサ10の全体構造を説明するための図であり、図1(A)は前記積層セラミックコンデンサ10の一例を示す外観斜視図であり、図1(B)は該積層セラミックコンデンサ10の前記図1(A)のB−B線における断面図である。図2は、前記積層セラミックコンデンサ10のチップ本体15の内部構造を説明するための分解斜視図である。また、図3は、本実施形態の積層セラミックコンデンサ10の製造プロセスの例を説明するための、製造プロセスの各段階における状態を示す斜視図である。 Hereinafter, a first embodiment of a multilayer ceramic capacitor of the present invention will be described with reference to FIGS. FIG. 1 is a diagram for explaining the overall structure of the multilayer ceramic capacitor 10 of the first embodiment, and FIG. 1A is an external perspective view showing an example of the multilayer ceramic capacitor 10, and FIG. ) Is a cross-sectional view of the multilayer ceramic capacitor 10 taken along line BB in FIG. FIG. 2 is an exploded perspective view for explaining the internal structure of the chip body 15 of the multilayer ceramic capacitor 10. FIG. 3 is a perspective view showing a state in each stage of the manufacturing process for explaining an example of the manufacturing process of the multilayer ceramic capacitor 10 of the present embodiment.

図1及び図2に示すように、本実施形態の積層セラミックコンデンサ10は、複数の誘電体層11a1,11a2,11b1,11b2と複数の略長方形状の内部電極12a,12bとを交互に積層してなるチップ本体15と、このチップ本体15の表面に形成され、かつ外部の回路基板のランド電極と接続する一対の外部電極16a,16bとからなり、前記複数の内部電極12a,12bが前記一対の外部電極16a,16bに交互に電気的に接続されている。 そして、前記チップ本体15における、互いに異なる外部電極16a,16bに接続される内部電極12a,12b同士が前記誘電体層11a1,11a2を挟んで対向する内部電極対向領域OPと、前記内部電極対向領域OPの前記各内部電極12a,12bが前記外部電極16a,16bに交互に引き出される内部電極引出し領域LEと、のうち、前記内部電極引出し領域LEにそれぞれ切欠き14a,14bが形成されているものである。 As shown in FIGS. 1 and 2, the multilayer ceramic capacitor 10 of this embodiment includes a plurality of dielectric layers 11 a 1, 11 a 2, 11 b 1, 11 b 2 and a plurality of substantially rectangular internal electrodes 12 a, 12 b that are alternately stacked. A chip body 15 and a pair of external electrodes 16a and 16b formed on the surface of the chip body 15 and connected to a land electrode of an external circuit board, and the plurality of internal electrodes 12a and 12b are the pair of external electrodes. The external electrodes 16a and 16b are alternately electrically connected. In the chip body 15, the internal electrodes 12a and 12b connected to different external electrodes 16a and 16b are opposed to each other with the dielectric layers 11a1 and 11a2 interposed therebetween, and the internal electrode facing region OP. Of the internal electrode extraction regions LE in which the internal electrodes 12a and 12b of the OP are alternately extracted to the external electrodes 16a and 16b, notches 14a and 14b are formed in the internal electrode extraction region LE, respectively. It is.

具体的には、図1(A)に示すように、略直方体状のチップ本体15の長手方向の端面及び該端面に隣接するそれぞれ長手方向に延びる4つの側面のそれぞれ前記端面の近傍に外部電極16a,16bが設けられており、前記チップ本体15の4つの側面のうちの1つの側面の前記外部電極16a,16bの近傍にそれぞれ、対向する一対の辺の長さが他の一対の辺よりも長い長方形の開口形状の切欠き14a,14bが形成されている。前記チップ本体15は、図1(A)及び図2に示すように、一方の主面側に略長方形状の第1の内部電極12aが設けられた第1の誘電体層11a1と、一方の主面側に略長方形状の第2の内部電極12bが設けられた第2の誘電体層11a2とが交互に積層され、互いに異なる外部電極16a,16bに接続される内部電極12a,12b同
士が前記誘電体層11a1,11a2を挟んで対向する内部電極対向領域OPと、前記内部電極対向領域OPの前記各内部電極12a,12bが前記外部電極16a,16bに交互に引き出される内部電極引出し領域LEとを構成している。そして、前記内部電極引出し領域LEにそれぞれ切欠き14a,14bが形成されている。また、前記内部電極12a,12bが設けられた複数の誘電体層11a1、11a2の積層方向の一端側には、第1のカバー層となる複数の誘電体層11b1が配設されるとともに、他端側には第2のカバー層となる複数の誘電体層11b2が配設されている。第1のカバー層となる複数の誘電体層11b1には、それぞれ、前記内部電極12a,12bを有する誘電体層11a1,11a2の前記それぞれの切欠き14a,14bに積層方向に重なる位置に同様に切欠き14a,14bが形成されている。これに対し、第2のカバー層となる複数の誘電体層11b2には、前記切欠き14a,14bは形成されていない。前記第1の内部電極12aは、略長方形状の前記第1の誘電体層11a1の一方の主面上の一方の短辺に接するように配設されており、前記内部電極引出し領域LEの切欠き14aの周囲に前記切欠きから所定の間隔以上離間するように内部電極が存在しないマージン領域M1が設けられている。また、同様に前記第2の内部電極12bは、略長方形状の前記第2の誘電体層11a2の一方の主面上の一方の短辺に接するように配設されており、前記内部電極引出し領域LEの切欠き14bの周囲に前記切欠きから所定の間隔以上離間するように内部電極が存在しないマージン領域M2が設けられている。
Specifically, as shown in FIG. 1A, external electrodes are provided in the vicinity of the end surfaces of the end surface in the longitudinal direction of the substantially rectangular parallelepiped chip body 15 and four side surfaces extending in the longitudinal direction adjacent to the end surfaces. 16a and 16b are provided, and the length of a pair of opposing sides in the vicinity of the external electrodes 16a and 16b on one of the four side surfaces of the chip body 15 is longer than that of the other pair of sides. Also, long rectangular opening-shaped notches 14a and 14b are formed. As shown in FIGS. 1A and 2, the chip body 15 includes a first dielectric layer 11a1 having a first internal electrode 12a having a substantially rectangular shape on one main surface side, The internal electrodes 12a and 12b connected to the different external electrodes 16a and 16b are alternately laminated with the second dielectric layers 11a2 provided with the substantially rectangular second internal electrodes 12b on the main surface side. An internal electrode opposing region OP facing each other with the dielectric layers 11a1 and 11a2 in between, and an internal electrode extraction region LE in which the internal electrodes 12a and 12b of the internal electrode opposing region OP are alternately extracted to the external electrodes 16a and 16b. And make up. Cutouts 14a and 14b are formed in the internal electrode lead-out region LE, respectively. In addition, a plurality of dielectric layers 11b1 serving as a first cover layer are disposed on one end side in the stacking direction of the plurality of dielectric layers 11a1 and 11a2 provided with the internal electrodes 12a and 12b. A plurality of dielectric layers 11b2 serving as a second cover layer are disposed on the end side. Similarly, the plurality of dielectric layers 11b1 serving as the first cover layer are respectively disposed at positions overlapping the respective notches 14a and 14b of the dielectric layers 11a1 and 11a2 having the internal electrodes 12a and 12b in the stacking direction. Notches 14a and 14b are formed. On the other hand, the notches 14a and 14b are not formed in the plurality of dielectric layers 11b2 serving as the second cover layer. The first internal electrode 12a is disposed so as to be in contact with one short side on one main surface of the first dielectric layer 11a1 having a substantially rectangular shape, and cuts the internal electrode lead-out region LE. A margin region M1 in which no internal electrode exists is provided around the notch 14a so as to be separated from the notch by a predetermined distance or more. Similarly, the second internal electrode 12b is disposed so as to be in contact with one short side on one main surface of the substantially rectangular second dielectric layer 11a2, and the internal electrode lead-out A margin region M2 in which no internal electrode exists is provided around the notch 14b in the region LE so as to be separated from the notch by a predetermined distance or more.

上記のように本実施形態の積層セラミックコンデンサ10は、図1(B)にその断面図を示すように、前記チップ本体15における、互いに異なる外部電極16a,16bに接続される内部電極12a、12b同士が前記誘電体層11a1,11a2を挟んで対向する内部電極対向領域OPの一方の前記内部電極12aが前記外部電極16aに引き出される内部電極引出し領域LEには切欠き14aが形成されているとともに、前記内部電極対向領域OPの他方の前記内部電極12bが前記外部電極16bに引き出される内部電極引出し領域LEには切欠き14bが形成されている。 As described above, the multilayer ceramic capacitor 10 of the present embodiment has the internal electrodes 12a and 12b connected to the external electrodes 16a and 16b different from each other in the chip body 15, as shown in a cross-sectional view in FIG. A notch 14a is formed in the internal electrode lead-out region LE where one internal electrode 12a of the internal electrode facing region OP facing each other across the dielectric layers 11a1 and 11a2 is drawn out to the external electrode 16a. A notch 14b is formed in the internal electrode extraction region LE where the other internal electrode 12b of the internal electrode facing region OP is extracted to the external electrode 16b.

本実施形態の積層セラミックコンデンサ10は、上記のように構成されているので、前記積層セラミックコンデンサ10の外部電極16a,16b間に交流電圧を印加した際に、内部電極対向領域OPの対向する内部電極12a,12b間の誘電体層11a1,11a2が該誘電体層11a1,11a2の面方向に交互に膨張・収縮を繰り返しても、該膨張・収縮による面方向の変位が前記切欠き14a,14bにより緩衝され、外部電極16a,16bの前記面方向への変位が抑制される。 Since the multilayer ceramic capacitor 10 of the present embodiment is configured as described above, when an AC voltage is applied between the external electrodes 16a and 16b of the multilayer ceramic capacitor 10, the internal electrode opposing region OP faces the internal electrode. Even if the dielectric layers 11a1 and 11a2 between the electrodes 12a and 12b repeatedly expand and contract alternately in the plane direction of the dielectric layers 11a1 and 11a2, the displacement in the plane direction due to the expansion and contraction causes the notches 14a and 14b. And the displacement of the external electrodes 16a and 16b in the surface direction is suppressed.

次に、本実施形態の積層セラミックコンデンサ10の製造方法の例について図3を用いて説明する。図3に示す第1の製造フローは、本実施形態の積層セラミックコンデンサ10の製造方法の代表例である。まず、チタン酸バリウムを主成分とするセラミック材料粉末とPVB(ポリビニルブチラール)等の有機バインダ及びエタノール等の有機溶媒を所定の比率で混合してセラミックスラリーを準備し、ドクターブレード法等の公知のシート化手段により所定の厚さに成形した後、所定の寸法にカットして、複数のセラミックグリーンシートを得る。次に、Ni電極材料ペースト、Cu電極材料ペースト等を用いて、前記で得られた複数のセラミックグリーンシートのうちの一部に、略長方形状を有し、前記内部電極引出し領域LEの電極が存在しないマージン領域Mに相当する欠落部が形成された複数の内部電極のパターンをスクリーン印刷法等により形成する。得られたセラミックグリーンシートを、内部電極対向領域OPと内部電極引出し領域LEとが設けられるように交互に反転して積層するとともに、残りのセラミックグリーンシートを両端にそれぞれ積層し、圧着して図3(a)に示すように、セラミックグリーンシート積層体11を得る。尚、セラミックグリーンシート表面への前記内部電極の印刷形成時に、個別の積層体チップに切断する際の切断位置を示すカットラインを同時に印刷形成しておくことが好ましい。次に、図3(b)に示すように、前記カットラインに沿って押し切り等により切断して略直方体状の複数の積層体チップ13を得る。次に、得られた積層体チップ13の角部及び稜線部分に回転バレルやサンドブラスト法等を用いて図3(c)に示すように面取りを行う。次に、得られた積層体チップ13の長手方向に延びる4つの側面のうちの積層方向の一方の端部となる一つの側面にドリル等により切削加工を施して、図3(d)に示すように前記積層体チップ13の内部の少なくとも前記内部電極が印刷形成されたセラミックグリーンシートに厚み方向に連続する切欠き14a,14bを設ける。次に、前記で得られた積層体チップ13を還元性雰囲気中で所定の温度プロファイルで焼成し、さらに中性もしくは酸化性雰囲気中で再酸化熱処理して、チップ本体15を得る。次に、前記チップ本体15の長手方向の両端面及び該端面と接する長手方向に延びる4つの側面の前記端面の近傍にそれぞれCu電極材料等の外部電極材料ペーストをディップ法等により塗布し、所定の雰囲気及び温度プロファイルで焼付けして、図3(e)に示すように積層セラミックコンデンサ10を得る。本発明は、Pd電極ペースト、Ag−Pd電極ペースト等を用いても良く、これらペーストを用いるときは大気雰囲気で焼成しても良い。 Next, an example of a method for manufacturing the multilayer ceramic capacitor 10 of the present embodiment will be described with reference to FIG. The first manufacturing flow shown in FIG. 3 is a typical example of the method for manufacturing the multilayer ceramic capacitor 10 of the present embodiment. First, a ceramic material powder mainly composed of barium titanate, an organic binder such as PVB (polyvinyl butyral), and an organic solvent such as ethanol are mixed at a predetermined ratio to prepare a ceramic slurry. After forming into a predetermined thickness by the sheet forming means, it is cut into a predetermined dimension to obtain a plurality of ceramic green sheets. Next, using a Ni electrode material paste, a Cu electrode material paste, or the like, a part of the plurality of ceramic green sheets obtained above has a substantially rectangular shape, and the electrode in the internal electrode lead-out region LE is A plurality of internal electrode patterns in which missing portions corresponding to the nonexistent margin region M are formed are formed by a screen printing method or the like. The obtained ceramic green sheets are alternately reversed and laminated so that the internal electrode facing area OP and the internal electrode lead area LE are provided, and the remaining ceramic green sheets are laminated on both ends, and are crimped. As shown to 3 (a), the ceramic green sheet laminated body 11 is obtained. In addition, it is preferable to print and form simultaneously the cut line which shows the cutting position at the time of cut | disconnecting to an individual laminated body chip | tip at the time of the printing formation of the said internal electrode on the ceramic green sheet surface. Next, as shown in FIG. 3B, a plurality of laminated chips 13 having a substantially rectangular parallelepiped shape are obtained by cutting along the cut line by pushing or the like. Next, chamfering is performed on the corners and ridges of the obtained laminate chip 13 as shown in FIG. Next, one of the four side surfaces extending in the longitudinal direction of the obtained laminated chip 13 is subjected to cutting with a drill or the like on one side surface which is one end in the stacking direction, and is shown in FIG. Thus, notches 14a and 14b continuous in the thickness direction are provided in a ceramic green sheet on which at least the internal electrode is printed and formed inside the multilayer chip 13. Next, the laminated chip 13 obtained above is fired at a predetermined temperature profile in a reducing atmosphere, and further subjected to re-oxidation heat treatment in a neutral or oxidizing atmosphere to obtain the chip body 15. Next, an external electrode material paste such as a Cu electrode material is applied by a dipping method or the like in the vicinity of both end surfaces in the longitudinal direction of the chip body 15 and four end surfaces extending in the longitudinal direction in contact with the end surfaces by a dipping method or the like. The multilayer ceramic capacitor 10 is obtained as shown in FIG. In the present invention, a Pd electrode paste, an Ag—Pd electrode paste, or the like may be used, and when these pastes are used, they may be fired in an air atmosphere.

次に、本実施形態の積層セラミックコンデンサ10の製造方法の他の例について図3を用いて説明する。図3に示す第2の製造フローは、本実施形態の積層セラミックコンデンサ10の製造方法の他の例である。まず、前記第1の製造フローと同様にして図3(a)に示すセラミックグリーンシート積層体11を得る。次に、得られたセラミックグリーンシート積層体11の積層方向の一方の端部となる一つの主面に図3(b’)に示すように前記と同様にドリル等により切削加工を施して、複数の切欠き14,14を形成する。得られたセラミックグリーンシート積層体11を前記と同様にしてカットラインで切断して、図3(c’)に示すように一対の切欠き14,14が形成された複数の積層体チップ13を得る。次に、前記積層体チップ13の角部及び稜線部分に前記と同様に回転バレルやサンドブラスト法等を用いて図3(e)に示すように面取りを行う。得られた積層体チップ13を前記と同様に焼成したのち、前記と同様に電極材料ペーストを塗布し、焼付けして前記と同様に積層セラミックコンデンサ10を得る。 Next, another example of the method for manufacturing the multilayer ceramic capacitor 10 of this embodiment will be described with reference to FIG. The second manufacturing flow shown in FIG. 3 is another example of the method for manufacturing the multilayer ceramic capacitor 10 of the present embodiment. First, the ceramic green sheet laminate 11 shown in FIG. 3A is obtained in the same manner as in the first manufacturing flow. Next, as shown in FIG. 3 (b ′), one main surface that is one end in the stacking direction of the obtained ceramic green sheet laminate 11 is cut by a drill or the like as described above, A plurality of notches 14, 14 are formed. The obtained ceramic green sheet laminate 11 is cut along a cut line in the same manner as described above, and a plurality of laminate chips 13 in which a pair of notches 14 and 14 are formed as shown in FIG. obtain. Next, chamfering is performed on the corners and ridges of the laminate chip 13 as shown in FIG. 3E using a rotating barrel, a sandblasting method, or the like. After firing the obtained multilayer chip 13 in the same manner as described above, the electrode material paste is applied and baked in the same manner as described above to obtain the multilayer ceramic capacitor 10 in the same manner as described above.

次に、上記誘電体層11a1,11a2の好ましい実施形態は次の通りである。すなわち、上記誘電体層11a1,11a2としては、チタン酸バリウム等を主成分とする誘電体セラミックからなるものが好ましい。前記誘電体セラミックの材料粉末と有機バインダとを含有するセラミックスラリーから、ドクターブレード法等によりセラミックグリーンシートを作成し、必要により積層したのち、前記誘電体セラミックの焼結する温度で焼成して得られる。また、上記誘電体層11a1,11a2は、これに限定するものではなく、他の公知の強誘電体を用いることができる。 Next, a preferred embodiment of the dielectric layers 11a1 and 11a2 is as follows. That is, the dielectric layers 11a1 and 11a2 are preferably made of a dielectric ceramic mainly composed of barium titanate or the like. A ceramic green sheet is prepared from a ceramic slurry containing the dielectric ceramic material powder and an organic binder by a doctor blade method or the like, laminated as necessary, and then fired at a temperature at which the dielectric ceramic is sintered. It is done. The dielectric layers 11a1 and 11a2 are not limited to this, and other known ferroelectrics can be used.

次に、上記内部電極12a,12bの好ましい実施形態は次の通りである。すなわち、上記内部電極12a,12bとしては、Ni,Cu、等の金属もしくは前記金属の少なくとも一方を含む合金であってもよい。また、内部電極12a,12bには、前記誘電体層11a1,11a2との密着性を向上させる目的で内部電極中に前記誘電体セラミックの粉末を微量添加したものであってもよい。上記内部電極12a,12bは、前記略長方形状の誘電体層11a1,11a2の一方の主面のそれぞれ一方の短辺に接するように形成されることが好ましい。 Next, a preferred embodiment of the internal electrodes 12a and 12b is as follows. That is, the internal electrodes 12a and 12b may be a metal such as Ni or Cu or an alloy containing at least one of the metals. The internal electrodes 12a and 12b may be obtained by adding a small amount of the dielectric ceramic powder into the internal electrodes for the purpose of improving the adhesion to the dielectric layers 11a1 and 11a2. The internal electrodes 12a and 12b are preferably formed so as to be in contact with one short side of one main surface of the substantially rectangular dielectric layers 11a1 and 11a2.

次に、上記チップ本体15の好ましい実施形態は次の通りである。すなわち、上記チップ本体15としては、略直方体状のものが好ましいが、これに限定するものではなく、例えば、高さ寸法が幅寸法及び長さ寸法に比べて小さい平板状であってもよい。 Next, a preferred embodiment of the chip body 15 is as follows. That is, the chip body 15 is preferably in the shape of a substantially rectangular parallelepiped, but is not limited thereto, and may be, for example, a flat plate having a height smaller than the width and length.

次に、上記外部電極16a,16bの好ましい実施形態は次の通りである。すなわち、上記外部電極16a,16bとしては、前記チップ本体の長さ方向の端面及びこれと接する4つの長さ方向に延びる側面の前記端面の近傍にそれぞれ設けられることが好ましいがこれに限定するものではなく、前記端面だけに設けられるものであってもよい。上記外部電極16a,16bは、上記チップ本体15の表面に前記内部電極12a,12bに接続するように形成されることが好ましく、形成方法としては、Ni,Cu等の電極材料ペーストの塗布焼付、Ag粉末を含む導電性樹脂ペーストの塗布硬化、電極材料のスパッタリング等により形成されることが好ましい。また、上記外部電極16a,16bの表面に、必要により、Niメッキ、Cuメッキ、ハンダメッキ等を形成することが好ましい。 Next, preferred embodiments of the external electrodes 16a and 16b are as follows. That is, the external electrodes 16a and 16b are preferably provided in the vicinity of the end surface of the chip body in the length direction and the end surfaces of the four side surfaces extending in contact with the length direction, but are not limited thereto. Instead, it may be provided only on the end face. The external electrodes 16a and 16b are preferably formed on the surface of the chip body 15 so as to be connected to the internal electrodes 12a and 12b. As a forming method, an electrode material paste such as Ni or Cu is applied and baked. It is preferably formed by coating and curing a conductive resin paste containing Ag powder, sputtering of an electrode material, or the like. Further, it is preferable to form Ni plating, Cu plating, solder plating or the like on the surfaces of the external electrodes 16a and 16b, if necessary.

次に、上記内部電極対向領域OPの好ましい実施形態は次の通りである。すなわち、上記内部電極対向領域OPとしては、前記チップ本体の長手方向の中央に配設されるのが好ましい。 Next, a preferred embodiment of the internal electrode facing region OP is as follows. That is, the internal electrode facing region OP is preferably disposed at the center in the longitudinal direction of the chip body.

次に上記内部電極引出し領域LEの好ましい実施形態は次の通りである。すなわち、上記内部電極引出し領域LEとしては、前記内部電極対向領域OPと外部電極16a,16bが形成される上記チップ本体15の端面との間に配設されることが好ましい。 Next, a preferred embodiment of the internal electrode lead-out region LE is as follows. That is, the internal electrode lead-out region LE is preferably disposed between the internal electrode facing region OP and the end surface of the chip body 15 where the external electrodes 16a and 16b are formed.

次に、上記切欠き14a,14bの好ましい実施形態は次の通りである。すなわち、上記切欠き14a,14bとしては、前記チップ本体15の前記内部電極引出し領域LEに形成されることが好ましい。上記切欠き14a,14bは上記誘電体層の積層方向の一端側から形成されることが好ましいが、これに限定されるものではなく、積層方向の他端側から形成されたものであってもよく、また、積層方向の一端側から他端側に貫通するものであってもよい。また、上記切欠き14a,14bは、前記チップ本体15の表面の外部電極16a,16bが設けられる位置を避けて形成されることが好ましい。また、上記切欠き14a,14bは、前記チップ本体15の長さ方向に伸びる中心線上に左右線対称に形成されることが好ましいが、これに限定するものではなく、前記中心線から一方側に偏った位置に形成されるものであってもよい。この場合には、前記内部電極対向領域OPを挟んで点対象に形成されることが好ましい。また、これに限定するものではなく、例えば、前記チップ本体15の長さ方向に伸びる中心線を挟んで左右線対称に複数の切欠きを設けてもよい。上記切欠き14a,14bの形状は、前記内部電極対向領域と前記外部電極とに沿って長辺を有する長方形状の開口形状が好ましいがこれに限定するものではなく、両端の角部にRが形成された長穴状であってもよく、また、丸穴状であってもよい。また、上記切欠き14a,14bの内部に絶縁性樹脂が充填されたものであってもよい。樹脂の充填はシリンジ等の治具を用いるほかに、他の方法を用いても良い。上記切欠き14a,14bの内部に充填される絶縁性樹脂としては、シリコーン樹脂、エポキシ樹脂その他の絶縁性樹脂から選ばれるものが好ましい。また、前記絶縁性樹脂は単独に限定するものではなく、例えば、無機フィラーや着色剤等を含有するものであってもよい。 Next, a preferred embodiment of the notches 14a and 14b is as follows. That is, the notches 14a and 14b are preferably formed in the internal electrode lead-out region LE of the chip body 15. The notches 14a and 14b are preferably formed from one end side in the stacking direction of the dielectric layer, but are not limited thereto, and may be formed from the other end side in the stacking direction. Moreover, it may penetrate from one end side to the other end side in the stacking direction. The notches 14a and 14b are preferably formed so as to avoid positions where the external electrodes 16a and 16b on the surface of the chip body 15 are provided. Further, the notches 14a and 14b are preferably formed symmetrically on the center line extending in the length direction of the chip body 15, but the present invention is not limited to this. It may be formed at a biased position. In this case, it is preferable to form a point object across the internal electrode facing region OP. However, the present invention is not limited to this, and for example, a plurality of notches may be provided symmetrically on the left and right lines across a center line extending in the length direction of the chip body 15. The shape of the notches 14a and 14b is preferably a rectangular opening shape having long sides along the internal electrode facing region and the external electrode, but is not limited to this, and R is formed at the corners of both ends. The formed long hole shape may be sufficient and a round hole shape may be sufficient. The notches 14a and 14b may be filled with an insulating resin. In addition to using a jig such as a syringe, other methods may be used for filling the resin. The insulating resin filled in the notches 14a and 14b is preferably selected from silicone resin, epoxy resin and other insulating resins. Moreover, the said insulating resin is not limited to single, For example, you may contain an inorganic filler, a coloring agent, etc.

次に、上記マージン領域M1、M2の好ましい実施形態は次の通りである。すなわち、上記マージン領域M1,M2としては、前記内部電極形成時に、前記切欠き14a,14bが形成される位置の周囲に所定の間隔で予め内部電極が存在しない領域として設けられることが好ましい。 Next, a preferred embodiment of the margin areas M1 and M2 is as follows. In other words, the margin regions M1 and M2 are preferably provided as regions where no internal electrode exists in advance at a predetermined interval around the position where the notches 14a and 14b are formed when the internal electrode is formed.

次に、本実施形態の積層セラミックコンデンサ10を用いた本発明のコンデンサ実装回路基板の第1の実施形態について、図4及び図5を参照して説明する。図4は本実施形態の積層セラミックコンデンサ10を回路基板21のランド電極23a,23b上に搭載する様子を説明するための斜視図である。また図
5は、本実施形態の積層セラミックコンデンサ10を用いた第1の実施形態のコンデンサ実装回路基板20を示す図であり、図5(C)は要部の外観斜視図であり、図5(D)は前記図5(C)のD−D線における断面図である。
Next, a first embodiment of the capacitor-mounted circuit board of the present invention using the multilayer ceramic capacitor 10 of the present embodiment will be described with reference to FIGS. FIG. 4 is a perspective view for explaining a state in which the multilayer ceramic capacitor 10 of the present embodiment is mounted on the land electrodes 23 a and 23 b of the circuit board 21. FIG. 5 is a diagram showing the capacitor-mounted circuit board 20 of the first embodiment using the multilayer ceramic capacitor 10 of the present embodiment, and FIG. 5C is an external perspective view of the main part. (D) is sectional drawing in the DD line | wire of the said FIG.5 (C).

本実施形態のコンデンサ実装回路基板20に用いられる回路基板21は、その少なくとも一方の表面に、配線22a,22bを有するとともに、該配線22a,22bに接続されたランド電極23a,23bを備える。本実施形態の積層セラミックコンデンサ10の搭載にあたっては、図4に示すように、前記ランド電極23a,23bの表面に予めメタルマスク等を用いてペースト状のハンダ24a、24bを印刷形成しておくことが好ましい。そして、前記ランド電極23a,23b上に塗布された前記ペースト状のハンダ24a,24bに前記積層セラミックコンデンサ10の外部電極16a,16bが接するように図示省略した電子部品自動マウント装置等を用いて搭載され、リフロー半田付け炉で熱処理されて前記積層セラミックコンデンサ10の外部電極16a,16bが前記回路基板21の前記ランド電極23a,23bにハンダ24a,24bにより導電固着される。 The circuit board 21 used for the capacitor-mounted circuit board 20 of the present embodiment includes wirings 22a and 22b on at least one surface thereof, and includes land electrodes 23a and 23b connected to the wirings 22a and 22b. When mounting the multilayer ceramic capacitor 10 of this embodiment, as shown in FIG. 4, paste-like solders 24a and 24b are printed on the surfaces of the land electrodes 23a and 23b in advance using a metal mask or the like. Is preferred. Then, mounting is performed using an electronic component automatic mounting device (not shown) such that the external electrodes 16a and 16b of the multilayer ceramic capacitor 10 are in contact with the paste-like solders 24a and 24b applied on the land electrodes 23a and 23b. The external electrodes 16a and 16b of the multilayer ceramic capacitor 10 are conductively fixed to the land electrodes 23a and 23b of the circuit board 21 by solders 24a and 24b by heat treatment in a reflow soldering furnace.

本実施形態のコンデンサ実装回路基板20は、図5(C)に示すように、前記第1の実施形態の積層セラミックコンデンサ10の外部電極16a,16bが回路基板21の配線22a,22bに接続されたランド電極23a,23bにそれぞれハンダ24a,24bを介して導電固着されているものである。 In the capacitor-mounted circuit board 20 of this embodiment, as shown in FIG. 5C, the external electrodes 16a and 16b of the multilayer ceramic capacitor 10 of the first embodiment are connected to the wirings 22a and 22b of the circuit board 21. The land electrodes 23a and 23b are conductively fixed via solders 24a and 24b, respectively.

そして、本実施形態のコンデンサ実装回路基板20の積層体セラミックコンデンサ10は、図5(D)に示すように、前記回路基板21のランド電極23a,23bにハンダにより導電固着された外部電極16a、16bと前記チップ本体15の内部電極対向領域OPとの間に切欠き14a,14bが形成されているので、前記回路基板21の配線22a,22b及び前記ランド電極23a,23b,前記ハンダ24a,24bを介して前記一対の外部電極16a,16bに交流電圧が印加されると、内部電極対向領域OPの対向する内部電極12a,12b間の誘電体層11a1,11a2が該誘電体層11a1,11a2の面方向に交互に膨張・収縮を繰り返しても、該膨張・収縮による面方向の変位が前記切欠き14a,14bにより緩衝され、外部電極16a,16bの前記面方向への変位が抑制される。そして、前記外部電極16a,16bにハンダ等により導電固着された一対のランド電極23a,23bの間隔寸法の変化が抑制される。このため、前記コンデンサ実装回路基板20の厚み方向の撓み震動の発生が抑制され、該回路基板21のたわみ震動に伴う雑音の発生が抑制される。 Then, as shown in FIG. 5D, the multilayer ceramic capacitor 10 of the capacitor-mounted circuit board 20 of the present embodiment includes external electrodes 16a electrically fixed to the land electrodes 23a and 23b of the circuit board 21 by solder. Since notches 14a and 14b are formed between 16b and the internal electrode facing region OP of the chip body 15, the wirings 22a and 22b and the land electrodes 23a and 23b of the circuit board 21 and the solders 24a and 24b are formed. When an AC voltage is applied to the pair of external electrodes 16a and 16b through the dielectric layers 11a1 and 11a2 between the opposing internal electrodes 12a and 12b of the internal electrode facing region OP, the dielectric layers 11a1 and 11a2 Even if the expansion and contraction are repeated alternately in the surface direction, the displacement in the surface direction due to the expansion and contraction is caused by the notches 14a and 14b. Is collision, the external electrodes 16a, is displaced to the surface direction of 16b is suppressed. And the change of the space | interval dimension of a pair of land electrode 23a, 23b electroconductively fixed to the said external electrode 16a, 16b with solder etc. is suppressed. For this reason, generation | occurrence | production of the bending vibration of the thickness direction of the said capacitor | condenser mounting circuit board 20 is suppressed, and generation | occurrence | production of the noise accompanying the bending vibration of this circuit board 21 is suppressed.

次に、上記回路基板21の好ましい実施形態は次の通りである。すなわち、上記回路基板としては、紙フェノール樹脂基板、ガラスエポキシ樹脂基板その他の公知の樹脂基板材料により成型された基板の少なくとも一方の主面にCu等の良導電性の金属等からなる配線22a,22bを有するものが好ましい。また、これに限定するものではなく、例えば、アルミナ等を主成分とするセラミック基板の表面に、Ag、Cu等を含有する電極材料ペーストを塗布焼付して前記配線を形成したものであってもよい。 Next, a preferred embodiment of the circuit board 21 is as follows. That is, as the circuit board, wiring 22a made of a highly conductive metal such as Cu or the like on at least one principal surface of a paper phenolic resin board, a glass epoxy resin board, or other known resin board material, Those having 22b are preferred. Further, the present invention is not limited to this. For example, the wiring may be formed by applying and baking an electrode material paste containing Ag, Cu or the like on the surface of a ceramic substrate mainly composed of alumina or the like. Good.

次に、上記ランド電極23a,23bの好ましい実施形態は次の通りである。すなわち、上記ランド電極23a,23bとしては、前記樹脂製の基板21上に前記配線22a,22bと同様にして形成されたものが好ましい。また、これに限定するものではなく前記と同様に、例えば、アルミナセラミック等からなるセラミック基板の表面に、Ag、Cu等の電極材料ペーストを塗布焼付して前記配線と同時に形成したものであってもよい。 Next, a preferred embodiment of the land electrodes 23a and 23b is as follows. That is, the land electrodes 23a and 23b are preferably formed on the resin substrate 21 in the same manner as the wirings 22a and 22b. In addition, the present invention is not limited to this, and as described above, for example, an electrode material paste such as Ag or Cu is applied and baked on the surface of a ceramic substrate made of alumina ceramic or the like, and formed simultaneously with the wiring. Also good.

(実施例)次に、本発明の第1の実施形態の積層セラミックコンデンサ10の実施例について説明する。積層セラミックコンデンサ10の外形寸法は、幅2.5mm、長さ3.2mm、高さ2.5mmである。内部電極対向領域OPの長さ寸法は2.6mm、内部電極引出し領域LEの長さ寸法は0.3mmである。 前記積層セラミックコンデンサ10のチップ本体15の一つの側面に、対向する一対の辺の長さが他の一対の辺の長さよりも長い長方形状の開口を有する切欠き14a,14bが形成されている。該切欠き14a,14bの寸法は、幅0.24mm、長さ1.52mm深さ2.2mmであり、前記内部電極引き出し領域LEの内部電極を有する誘電体層11a1,11a2のすべてを貫通するように形成されている。(比較例)前記切欠き14a,14bを有さないこと以外は前記実施例の積層セラミックコンデンサ10と同様にした比較例の積層セラミックコンデンサについて、外部電極の端面方向の振幅量をシミュレーション計算にて比較した結果、本実施例のセラミックコンデンサ10の端面の振幅量は比較例の積層セラミックコンデンサの端面の振幅量に比べ25.4%低減された。また、幅40mm、長さ100mm、厚さ1.6mmのガラスエポキシ樹脂製の基板の表面に幅3mm、長さ5mm、厚み35μmのCu箔からなるランド電極が電極間距離2mmを隔てて対向配置された評価用回路基板の前記ランド電極上に予めメタルマスクを用いてハンダペーストを印刷し、内部電極対向領域OP部における誘電体層の誘電率、1層厚み、積層数が異なる上記の比較例のセラミックコンデンサをそれぞれ前記外部電極が前記ランド電極と対向するように搭載し、リフロー半田付け処理してコンデンサ実装回路基板試料を作成した。上記で得られたコンデンサ実装回路基板試料を、リオン株式社製の型式NL−14の雑音測定装置にセットし、前記コンデンサ実装回路基板試料の前記ランド電極間にDC20V、AC5V,5Hzの交流電圧を印加し、10mm離間した位置に配置されたNL−14により前記基板の撓み震動により発生する雑音の測定を行った。その結果、比較例の外部電極16aまたは16bの端面方向の振幅量が25.4%低減された本実施例のコンデンサ実装回路基板から発生する雑音は、比較例のコンデンサ実装回路基板から発生する雑音に比べて約7%低減することが確認された。 (Example) Next, an example of the multilayer ceramic capacitor 10 of the first embodiment of the present invention will be described. The outer dimensions of the multilayer ceramic capacitor 10 are a width of 2.5 mm, a length of 3.2 mm, and a height of 2.5 mm. The length dimension of the internal electrode facing area OP is 2.6 mm, and the length dimension of the internal electrode lead area LE is 0.3 mm. On one side surface of the chip body 15 of the multilayer ceramic capacitor 10, notches 14a and 14b having a rectangular opening in which the length of a pair of opposing sides is longer than the length of the other pair of sides are formed. . The notches 14a and 14b have a width of 0.24 mm, a length of 1.52 mm, and a depth of 2.2 mm, and penetrate all the dielectric layers 11a1 and 11a2 having the internal electrodes of the internal electrode lead-out region LE. It is formed as follows. (Comparative Example) For the multilayer ceramic capacitor of the comparative example, which is the same as the multilayer ceramic capacitor 10 of the above example except that the notches 14a and 14b are not provided, the amplitude amount in the end face direction of the external electrode is obtained by simulation calculation. As a result of comparison, the amplitude of the end face of the ceramic capacitor 10 of this example was reduced by 25.4% compared to the amplitude of the end face of the multilayer ceramic capacitor of the comparative example. Further, land electrodes made of Cu foil having a width of 3 mm, a length of 5 mm, and a thickness of 35 μm are opposed to each other with a distance of 2 mm between the electrodes on the surface of a glass epoxy resin substrate having a width of 40 mm, a length of 100 mm, and a thickness of 1.6 mm. The above comparative example in which a solder paste is printed in advance on the land electrode of the evaluation circuit board using a metal mask, and the dielectric constant, the thickness of one layer, and the number of stacked layers of the dielectric layer in the internal electrode facing region OP are different. Each of the ceramic capacitors was mounted so that the external electrodes face the land electrodes, and a reflow soldering process was performed to prepare a capacitor-mounted circuit board sample. The capacitor mounted circuit board sample obtained above is set in a noise measuring device of model NL-14 manufactured by Rion Co., Ltd., and an AC voltage of DC20V, AC5V, 5Hz is applied between the land electrodes of the capacitor mounted circuit board sample. The noise generated by the flexural vibration of the substrate was measured with NL-14 placed at a position 10 mm apart. As a result, the noise generated from the capacitor-mounted circuit board of this example in which the amplitude amount in the end face direction of the external electrode 16a or 16b of the comparative example is reduced by 25.4% is the noise generated from the capacitor-mounted circuit board of the comparative example. It was confirmed that it was reduced by about 7%.

次に、本発明の積層セラミックコンデンサの第2実施形態について、図6を参照して説明する。図6は第2の実施形態の積層セラミックコンデンサ30の全体構造を説明するための図であり、図6(E)は前記積層セラミックコンデンサ30の一例を示す外観斜視図であり、図6(F)は該積層セラミックコンデンサ30の前記図6(E)のF−F線における断面図である。 Next, a second embodiment of the multilayer ceramic capacitor of the present invention will be described with reference to FIG. FIG. 6 is a view for explaining the entire structure of the multilayer ceramic capacitor 30 of the second embodiment, and FIG. 6E is an external perspective view showing an example of the multilayer ceramic capacitor 30, and FIG. ) Is a cross-sectional view of the multilayer ceramic capacitor 30 taken along line FF in FIG.

図6に示すように、本実施形態の積層セラミックコンデンサ30は、先の第1の実施形態と同様に、複数の誘電体層と複数の略長方形状の内部電極32a,32bとを交互に積層してなるチップ本体35と、このチップ本体35の表面に形成され、かつ外部の回路基板のランド電極と接続する一対の外部電極36a,36bとからなり、前記複数の内部電極32a,32bが前記一対の外部電極36a,36bに交互に電気的に接続されている。 そして、先の第1の実施形態と同様に、前記チップ本体35における、互いに異なる外部電極36a,36bに接続される内部電極32a,32b同士が前記誘電体層を挟んで対向する内部電極対向領域OPと、前記内部電極対向領域OPの前記各内部電極32a,32bが前記外部電極36a,36bに交互に引き出される内部電極引出し領域LEと、のうち、前記内部電極引出し領域LEにそれぞれ切欠き34a,34bが形成されている。そして、本実施形態の積層セラミックコンデンサ30は前記第1の実施形態と異なり、前記内部電極引き出し領域LEの前記切欠き34a,34bの内部に絶縁性樹脂37a,37bが充填されているものである。 As shown in FIG. 6, the multilayer ceramic capacitor 30 according to the present embodiment is formed by alternately laminating a plurality of dielectric layers and a plurality of substantially rectangular internal electrodes 32a and 32b, as in the first embodiment. A chip body 35 and a pair of external electrodes 36a and 36b formed on the surface of the chip body 35 and connected to the land electrodes of an external circuit board, and the plurality of internal electrodes 32a and 32b are The pair of external electrodes 36a and 36b are electrically connected alternately. As in the first embodiment, the internal electrode facing region in which the internal electrodes 32a and 32b connected to the different external electrodes 36a and 36b in the chip body 35 face each other with the dielectric layer interposed therebetween. Of the OP and the internal electrode extraction region LE in which the internal electrodes 32a and 32b of the internal electrode facing region OP are alternately extracted to the external electrodes 36a and 36b, notches 34a are respectively formed in the internal electrode extraction region LE. , 34b are formed. The multilayer ceramic capacitor 30 according to this embodiment is different from the first embodiment in that insulating resins 37a and 37b are filled in the notches 34a and 34b of the internal electrode lead-out region LE. .

具体的には、図6(E)に示すように、略直方体状のチップ本体35の長手方向の端面及び該端面に隣接するそれぞれ長手方向に延びる4つの側面のそれぞれ前記端面の近傍に部電極36a,36bが設けられており、前記チップ本体35の4つの側面のうちの1つの側面の前記外部電極36a,36bの近傍にそれぞれ対向する一対の辺の長さが他の一対の辺よりも長い長方形の開口形状の切欠き34a,34bが形成されている。前記チップ本体35は、図6(F)に概略を示すように、前記第1の実施形態と同様に、一方の主面側に略長方形状の第1の内部電極32aが設けられた第1の誘電体層と、一方の主面側に略長方形状の第2の内部電極32bが設けられた第2の誘電体層とが交互に積層され、互いに異なる外部電極36a,36bに接続される内部電極32a,32b同士が前記誘電体層を挟んで対向する内部電極対向領域OPと、前記内部電極対向領域OPの前記各内部電極32a,32bが前記外部電極36a,36bに交互に引き出される内部電極引出し領域LEとを構成している。そして、前記内部電極引出し領域LEにそれぞれ切欠き34a,34bが形成されている。また、前記内部電極32a,32bが設けられた複数の誘電体層の積層方向の一端側には、第1のカバー層となる複数の誘電体層が配設されるとともに、他端側には第2のカバー層となる複数の誘電体層とを有する。第1のカバー層となる複数の誘電体層には、それぞれ、前記内部電極32a,32bを有する誘電体層の前記それぞれの切欠き34a,34bに積層方向に重なる位置に同様に切欠き34a,34bが形成されている。前記第1の内部電極32aは、前記第1の実施形態と同様に略長方形状の前記第1の誘電体層の一方の主面上の一方の短辺に接するように配設されており、前記内部電極引出し領域LEの切欠き34aの周囲に前記切欠きから所定の間隔以上離間するように内部電極が存在しないマージン領域M3が設けられている。また、同様に前記第2の内部電極32bは、略長方形状の前記第2の誘電体層の一方の主面上の一方の短辺に接するように配設されており、前記内部電極引出し領域LEの切欠き34bの周囲に前記切欠きから所定の間隔以上離間するように内部電極が存在しないマージン領域M4が設けられている。 Specifically, as shown in FIG. 6 (E), a partial electrode is formed in the vicinity of the end face of each of the end face in the longitudinal direction of the substantially rectangular parallelepiped chip body 35 and four side faces extending in the longitudinal direction adjacent to the end face. 36a and 36b are provided, and the length of a pair of sides facing each other in the vicinity of the external electrodes 36a and 36b on one of the four side surfaces of the chip body 35 is longer than that of the other pair of sides. Long rectangular opening-shaped notches 34a and 34b are formed. As schematically shown in FIG. 6F, the chip body 35 has a first internal electrode 32a having a substantially rectangular shape on one main surface side, as in the first embodiment. And the second dielectric layer provided with the substantially rectangular second internal electrode 32b on one main surface side are alternately stacked and connected to different external electrodes 36a and 36b. An internal electrode facing region OP in which the internal electrodes 32a and 32b are opposed to each other with the dielectric layer in between, and the internal electrodes 32a and 32b in the internal electrode facing region OP are alternately drawn out to the external electrodes 36a and 36b. An electrode lead-out region LE is configured. Cutouts 34a and 34b are formed in the internal electrode lead-out region LE, respectively. A plurality of dielectric layers serving as a first cover layer are disposed on one end side in the stacking direction of the plurality of dielectric layers provided with the internal electrodes 32a and 32b, and on the other end side. A plurality of dielectric layers serving as a second cover layer; Similarly, the plurality of dielectric layers serving as the first cover layer have notches 34a, 34a, 34a, 34b, respectively, at positions overlapping the respective notches 34a, 34b of the dielectric layer having the internal electrodes 32a, 32b in the stacking direction. 34b is formed. The first internal electrode 32a is disposed so as to be in contact with one short side on one main surface of the first dielectric layer having a substantially rectangular shape as in the first embodiment, A margin region M3 in which no internal electrode exists is provided around the notch 34a of the internal electrode lead-out region LE so as to be separated from the notch by a predetermined distance or more. Similarly, the second internal electrode 32b is disposed so as to be in contact with one short side on one main surface of the substantially rectangular second dielectric layer, and the internal electrode lead-out region A margin region M4 where no internal electrode exists is provided around the notch 34b of the LE so as to be separated from the notch by a predetermined distance or more.

上記のように本実施形態の積層セラミックコンデンサ30は、図6(F)にその断面図を示すように、前記チップ本体35における、互いに異なる外部電極36a,36bに接続される内部電極32a、32b同士が前記誘電体層を挟んで対向する内部電極対向領域OPの一方の前記内部電極32aが前記外部電極36aに引き出される内部電極引出し領域LEには切欠き34aが形成されているとともに、前記内部電極対向領域OPの他方の前記内部電極32bが前記外部電極36bに引き出される内部電極引出し領域LEには切欠き34bが形成されており、前記切欠き34a,34bの内部にそれぞれ絶縁性樹脂37a,37bが充填されている。このため、前記積層セラミックコンデンサ30のチップ本体35の強度低下が防止されるとともに、実装時のノズルによる吸着ミスの発生が防止され、ハンドリングが容易になる。 As described above, the multilayer ceramic capacitor 30 of the present embodiment has the internal electrodes 32a and 32b connected to the external electrodes 36a and 36b different from each other in the chip body 35, as shown in the sectional view of FIG. A notch 34a is formed in the internal electrode lead region LE in which one internal electrode 32a of the internal electrode facing region OP facing each other across the dielectric layer is drawn to the external electrode 36a, and the internal electrode A cutout 34b is formed in the internal electrode lead-out region LE where the other internal electrode 32b of the electrode facing region OP is drawn out to the external electrode 36b, and insulating resin 37a, 37b is filled. For this reason, the strength of the chip body 35 of the multilayer ceramic capacitor 30 is prevented from lowering, and the occurrence of a suction error due to the nozzle during mounting is prevented, thereby facilitating handling.

次に、上記第2の実施形態の積層セラミックコンデンサ30を用いた本発明のコンデンサ実装回路基板の第2の実施形態について、図7を用いて説明する。図7は本実施形態の積層セラミックコンデンサ30を用いた第2の実施形態のコンデンサ実装回路基板40を示す図であり、図7(G)は要部の外観斜視図であり、図7(H)は前記図7(G)のH−H線における断面図である。 Next, a second embodiment of the capacitor-mounted circuit board of the present invention using the multilayer ceramic capacitor 30 of the second embodiment will be described with reference to FIG. FIG. 7 is a diagram showing a capacitor-mounted circuit board 40 of the second embodiment using the multilayer ceramic capacitor 30 of the present embodiment. FIG. 7G is an external perspective view of the main part, and FIG. ) Is a cross-sectional view taken along the line H-H in FIG.

本実施形態のコンデンサ実装回路基板40に用いられる回路基板41は、図7(G)に示されるように、前記第1の実施形態の回路基板21と同様に、少なくとも一方の主面に、配線42a,42bを有するとともに、該配線42a,42bに接続されたランド電極43a,43bを備える。 As shown in FIG. 7G, the circuit board 41 used in the capacitor-mounted circuit board 40 of the present embodiment is wired on at least one main surface in the same manner as the circuit board 21 of the first embodiment. 42a and 42b, and land electrodes 43a and 43b connected to the wirings 42a and 42b.

本実施形態のコンデンサ実装回路基板40は、図7(G)に示すように、前記第2の実施形態の積層セラミックコンデンサ30の外部電極36a,36bが回路基板41の配線42a,42bに接続されたランド電極43a,43bにそれぞれハンダ44a,44bを介して導電固着されているものである。 In the capacitor-mounted circuit board 40 of this embodiment, the external electrodes 36a and 36b of the multilayer ceramic capacitor 30 of the second embodiment are connected to the wirings 42a and 42b of the circuit board 41, as shown in FIG. The land electrodes 43a and 43b are conductively fixed via solders 44a and 44b, respectively.

そして、本実施形態のコンデンサ実装回路基
板40の積層体セラミックコンデンサ30は、図7(H)に示すように、前記回路基板41のランド電極43a,43bにハンダにより導電固着された外部電極36a、36bと前記チップ本体35の内部電極対向領域OPとの間に切欠き34a,34bが形成され、該切欠き34a,34bの内部にそれぞれ絶縁性樹脂37a,37bが充填されているので、前記回路基板41の配線42a,42b及び前記ランド電極43a,43b,前記ハンダ44a,44bを介して前記一対の外部電極36a,36bに交流電圧が印加されると、内部電極対向領域OPの対向する内部電極32a,32b間の誘電体層が該誘電体層の面方向に交互に膨張・収縮を繰り返しても、該膨張・収縮による面方向の変位が前記チップ本体35に比べて柔軟性を有する前記絶縁性樹脂37a,37bが内部に充填された切欠き34a,34bにより緩衝され、外部電極36a,36bの前記面方向への変位が抑制される。そして、前記外部電極36a,36bにハンダ等により導電固着された一対のランド電極43a,43bの間隔寸法の変化が抑制される。このため、前記コンデンサ実装回路基板40の厚み方向の撓み震動の発生が抑制され、該回路基板41のたわみ震動に伴う雑音の発生が抑制される。
Then, as shown in FIG. 7H, the multilayer ceramic capacitor 30 of the capacitor-mounted circuit board 40 of the present embodiment has external electrodes 36a electrically conductively fixed to the land electrodes 43a and 43b of the circuit board 41 by solder. Notches 34a, 34b are formed between the chip 36b and the internal electrode facing region OP of the chip body 35, and the notches 34a, 34b are filled with insulating resins 37a, 37b, respectively. When an AC voltage is applied to the pair of external electrodes 36a and 36b via the wirings 42a and 42b of the substrate 41, the land electrodes 43a and 43b, and the solders 44a and 44b, the internal electrodes facing each other in the internal electrode facing region OP Even if the dielectric layer between 32a and 32b repeatedly expands and contracts alternately in the surface direction of the dielectric layer, the surface direction due to the expansion and contraction The displacement is buffered by the notches 34a and 34b filled with the insulating resins 37a and 37b having flexibility compared to the chip body 35, and the displacement of the external electrodes 36a and 36b in the surface direction is suppressed. The And the change of the space | interval dimension of a pair of land electrode 43a, 43b electrically fixed to the said external electrodes 36a, 36b with solder | solder etc. is suppressed. For this reason, generation | occurrence | production of the bending vibration of the thickness direction of the said capacitor | condenser mounting circuit board 40 is suppressed, and generation | occurrence | production of the noise accompanying the bending vibration of this circuit board 41 is suppressed.

次に、本発明の積層セラミックコンデンサの第3の実施形態について、図8及び図9を参照して説明する。図8は第3の実施形態の積層セラミックコンデンサ50の全体構造を説明するための断面図である。図9は、前記積層セラミックコンデンサ50のチップ本体55の内部構造を説明するための分解斜視図である。 Next, a third embodiment of the multilayer ceramic capacitor of the present invention will be described with reference to FIGS. FIG. 8 is a cross-sectional view for explaining the overall structure of the multilayer ceramic capacitor 50 of the third embodiment. FIG. 9 is an exploded perspective view for explaining the internal structure of the chip body 55 of the multilayer ceramic capacitor 50.

図8及び図9に示すように、本実施形態の積層セラミックコンデンサ50は、複数の誘電体層51a1,51a2,51b1,51b2と複数の略長方形状の内部電極52a,52bとを交互に積層してなるチップ本体55と、このチップ本体55の表面に形成され、かつ外部の回路基板のランド電極と接続する一対の外部電極56a,56bとからなり、前記複数の内部電極52a,52bが前記一対の外部電極56a,56bに交互に電気的に接続されている。 そして、前記チップ本体55における、互いに異なる外部電極56a,56bに接続される内部電極52a,52b同士が前記誘電体層51a1,51a2を挟んで対向する内部電極対向領域OPと、前記内部電極対向領域OPの前記各内部電極52a,52bが前記外部電極56a,56bに交互に引き出される内部電極引出し領域LEと、のうち、前記内部電極引出し領域LEに切欠き54a,54bが形成されているものである。 As shown in FIGS. 8 and 9, the multilayer ceramic capacitor 50 according to the present embodiment includes a plurality of dielectric layers 51 a 1, 51 a 2, 51 b 1, 51 b 2 and a plurality of substantially rectangular internal electrodes 52 a, 52 b that are alternately stacked. A chip body 55 and a pair of external electrodes 56a and 56b formed on the surface of the chip body 55 and connected to a land electrode of an external circuit board, and the plurality of internal electrodes 52a and 52b are the pair of external electrodes. The external electrodes 56a and 56b are electrically connected alternately. In the chip body 55, the internal electrodes 52a and 52b connected to the different external electrodes 56a and 56b are opposed to each other with the dielectric layers 51a1 and 51a2 interposed therebetween, and the internal electrode facing region. Of the internal electrode extraction regions LE in which the internal electrodes 52a and 52b of the OP are alternately extracted to the external electrodes 56a and 56b, notches 54a and 54b are formed in the internal electrode extraction region LE. is there.

具体的には、図8に示すように、略直方体状のチップ本体55の長手方向の端面及び該端面に隣接するそれぞれ長手方向に延びる4つの側面のそれぞれ前記端面の近傍に外部電極56a,56bが設けられており、前記チップ本体55の4つの側面のうちの1つの側面からこれと対向する他の1つの側面に至るように、前記外部電極56a,56bの近傍にそれぞれ対向する一対の辺の長さが他の一対の辺よりも長い長方形の開口形状の切欠き54a,54bが形成されている。前記チップ本体55は、前記第1の実施形態と同様に、図8及び図9に示すように、一方の主面側に略長方形状の第1の内部電極52aが設けられた第1の誘電体層51a1と、一方の主面側に略長方形状の第2の内部電極52bが設けられた第2の誘電体層51a2とが交互に積層され、互いに異なる外部電極56a,56bに接続される内部電極52a,52b同士が前記誘電体層51a1,51a2を挟んで対向する内部電極対向領域OPと、前記内部電極対向領域OPの前記各内部電極52a,52bが前記外部電極56a,56bに交互に引き出される内部電極引出し領域LEとを構成している。そして、前記内部電極引出し領域LEにそれぞれ切欠き54a,54bが形成されている。また、前記内部電極52a,52bが設けられた複数の誘電体層51a1、51a2の積層方向の一端側には、第1のカバー層となる複数の誘電体層51b1が配設されるとともに、他端側には第2のカバー層となる複数の誘電体層51b2とを有する。前記第1のカバー層となる複数の誘電体層51b1には、それぞれ、前記内部電極52a,52bを有する誘電体層51a1,51a2の前記それぞれの切欠き54a,54bに積層方向に重なる位置に同様に切欠き54a,54bが形成されている。また、前記第1の実施形態と異なり、第2のカバー層となる複数の誘電体層51b2にも、それぞれ、前記内部電極52a,52bを有する誘電体層51a1,51a2の前記それぞれの切欠き54a,54bに積層方向に重なる位置に同様に切欠き54a,54bが形成されている。前記第1の内部電極52aは、略長方形状の前記第1の誘電体層51a1の一方の主面上の一方の短辺に接するように配設されており、前記内部電極引出し領域LEの切欠き54aの周囲に前記切欠きから所定の間隔以上離間するように内部電極が存在しないマージン領域M5が設けられている。また、同様に前記第2の内部電極52bは、略長方形状の前記第2の誘電体層51a2の一方の主面上の一方の短辺に接するように配設されており、前記内部電極引出し領域LEの切欠き54bの周囲に前記切欠きから所定の間隔以上離間するように内部電極が存在しないマージン領域M6が設けられている。 Specifically, as shown in FIG. 8, external electrodes 56a and 56b are provided in the vicinity of the end surfaces of the end surface in the longitudinal direction of the substantially rectangular parallelepiped chip body 55 and the four side surfaces extending in the longitudinal direction adjacent to the end surfaces. And a pair of sides facing each other in the vicinity of the external electrodes 56a and 56b so as to reach from one of the four sides of the chip body 55 to the other side facing the side. A rectangular opening-shaped notch 54a, 54b having a length longer than that of the other pair of sides is formed. As in the first embodiment, the chip body 55 includes a first dielectric having a substantially rectangular first internal electrode 52a on one main surface side, as shown in FIGS. The body layers 51a1 and the second dielectric layers 51a2 provided with the substantially rectangular second internal electrodes 52b on one main surface side are alternately stacked and connected to different external electrodes 56a and 56b. The internal electrodes 52a and 52b are opposed to each other with the dielectric layers 51a1 and 51a2 interposed therebetween, and the internal electrodes 52a and 52b of the internal electrode facing region OP are alternately arranged on the external electrodes 56a and 56b. An internal electrode extraction region LE to be extracted is configured. Cutouts 54a and 54b are formed in the internal electrode lead-out region LE, respectively. In addition, a plurality of dielectric layers 51b1 serving as a first cover layer are disposed on one end side in the stacking direction of the plurality of dielectric layers 51a1 and 51a2 provided with the internal electrodes 52a and 52b. A plurality of dielectric layers 51b2 serving as a second cover layer are provided on the end side. The plurality of dielectric layers 51b1 serving as the first cover layer are similar to the positions overlapping the respective notches 54a and 54b of the dielectric layers 51a1 and 51a2 having the internal electrodes 52a and 52b, respectively. Notches 54a and 54b are formed in the upper and lower portions. Further, unlike the first embodiment, each of the plurality of dielectric layers 51b2 serving as the second cover layer is also provided with the respective notches 54a of the dielectric layers 51a1 and 51a2 having the internal electrodes 52a and 52b. , 54b are similarly formed with notches 54a, 54b at positions overlapping with the stacking direction. The first internal electrode 52a is disposed so as to be in contact with one short side on one main surface of the first dielectric layer 51a1 having a substantially rectangular shape, and cuts the internal electrode lead-out region LE. A margin region M5 in which no internal electrode exists is provided around the notch 54a so as to be separated from the notch by a predetermined distance or more. Similarly, the second internal electrode 52b is disposed so as to be in contact with one short side on one main surface of the substantially rectangular second dielectric layer 51a2, and the internal electrode lead-out A margin region M6 in which no internal electrode exists is provided around the notch 54b in the region LE so as to be separated from the notch by a predetermined distance or more.

上記のように本実施形態の積層セラミックコンデンサ50は、図8にその断面図を示すように、前記チップ本体55における、互いに異なる外部電極56a,56bに接続される内部電極52a、52b同士が前記誘電体層51a1,51a2を挟んで対向する内部電極対向領域OPの一方の前記内部電極52aが前記外部電極56aに引き出される内部電極引出し領域LEには切欠き54aが形成されているとともに、前記内部電極対向領域OPの他方の前記内部電極52bが前記外部電極56bに引き出される内部電極引出し領域LEには切欠き54bが形成されている。本実施形態の作用効果は、先の第1の実施形態と同様であるため、説明を省略する。 As described above, in the multilayer ceramic capacitor 50 of the present embodiment, the internal electrodes 52a and 52b connected to the different external electrodes 56a and 56b in the chip body 55 are the same as shown in FIG. A notch 54a is formed in the internal electrode lead-out region LE in which one internal electrode 52a of the internal electrode facing region OP facing each other across the dielectric layers 51a1 and 51a2 is drawn out to the external electrode 56a. A notch 54b is formed in the internal electrode extraction region LE where the other internal electrode 52b of the electrode facing region OP is extracted to the external electrode 56b. Since the operational effects of this embodiment are the same as those of the first embodiment, description thereof is omitted.

次に、本発明の積層セラミックコンデンサの第4の実施形態について、図10及び図11を参照して説明する。図10は第4の実施形態の積層セラミックコンデンサ60の全体構造を説明するための外観斜視図である。図11は、前記積層セラミックコンデンサ60のチップ本体65の内部構造を説明するための分解斜視図である。 Next, a fourth embodiment of the multilayer ceramic capacitor of the present invention will be described with reference to FIGS. FIG. 10 is an external perspective view for explaining the overall structure of the multilayer ceramic capacitor 60 of the fourth embodiment. FIG. 11 is an exploded perspective view for explaining the internal structure of the chip body 65 of the multilayer ceramic capacitor 60.

図10及び図11に示すように、本実施形態の積層セラミックコンデンサ60は、複数の誘電体層61a1,61a2,61b1,61b2と複数の略長方形状の内部電極62a,62bとを交互に積層してなるチップ本体65と、このチップ本体65の表面に形成され、かつ外部の回路基板のランド電極と接続する一対の外部電極66a,66bとからなり、前記複数の内部電極62a,62bが前記一対の外部電極66a,66bに交互に電気的に接続されている。 そして、前記チップ本体65における、互いに異なる外部電極66a,66bに接続される内部電極62a,62b同士が前記誘電体層61a1,61a2を挟んで対向する内部電極対向領域OPと、前記内部電極対向領域OPの前記各内部電極62a,62bが前記外部電極66a,66bに交互に引き出される内部電極引出し領域LEと、のうち、前記内部電極引出し領域LEに切欠き64a,64bが形成されているものである。 As shown in FIGS. 10 and 11, the multilayer ceramic capacitor 60 of the present embodiment includes a plurality of dielectric layers 61 a 1, 61 a 2, 61 b 1, 61 b 2 and a plurality of substantially rectangular internal electrodes 62 a, 62 b that are alternately stacked. A chip body 65 and a pair of external electrodes 66a and 66b formed on the surface of the chip body 65 and connected to a land electrode of an external circuit board, and the plurality of internal electrodes 62a and 62b are the pair of external electrodes. The external electrodes 66a and 66b are alternately electrically connected. In the chip body 65, the internal electrodes 62a and 62b connected to the different external electrodes 66a and 66b are opposed to each other with the dielectric layers 61a1 and 61a2 interposed therebetween, and the internal electrode facing region. Of the internal electrode extraction regions LE in which the internal electrodes 62a and 62b of the OP are alternately extracted to the external electrodes 66a and 66b, notches 64a and 64b are formed in the internal electrode extraction region LE. is there.

具体的には、図10に示すように、略直方体状のチップ本体65の長手方向の端面及び該端面に隣接するそれぞれ長手方向に延びる4つの側面のそれぞれ前記端面の近傍に外部電極66a,66bが設けられており、前記チップ本体65の4つの側面のうちの1つの側面の前記外部電極66a,66bの近傍にそれぞれ開口形状が円形の切欠き64a,64a,64b,64bが前記チップ本体の長手方向に延びる中心線を挟んで線対称に複数形成されている。前記チップ本体65は、前記第1の実施形態と同様に、図10及び図11に示すように、一方の主面側に略長方形状の第1の内部電極62aが設けられた第1の誘電体層61a1と、一方の主面側に略長方形状の第2の内部電極62bが設けられた第2の誘電体層61a2とが交互に積層され、互いに異なる外部電極66a,66bに接続される内部電極62a,62b同士が前記誘電体層61a1,61a2を挟んで対向する内部電極対向領域OPと、前記内部電極対向領域OPの前記各内部電極62a,62bが前記外部電極66a,66bに交互に引き出される内部電極引出し領域LEとを構成している。そして、前記内部電極引出し領域LEにそれぞれ一対の切欠き64a,64a,64b,64bが形成されている。また、前記内部電極62a,62bが設けられた複数の誘電体層61a1,61a2の積層方向の一端側には、第1のカバー層となる複数の誘電体層61b1が配設されるとともに、他端側には第2のカバー層となる複数の誘電体層61b2とを有する。前記第1のカバー層となる複数の誘電体層61b1には、それぞれ、前記内部電極62a,62bを有する誘電体層61a1,61a2の前記それぞれの切欠き64a,64bに積層方向に重なる位置に同様に切欠き64a,64bが形成されている。これに対し、第2のカバー層となる複数の誘電体層61b2には、前記切欠きは形成されていない。前記第1の内部電極62aは、略長方形状の前記第1の誘電体層61a1の一方の主面上の一方の短辺に接するように配設されており、前記内部電極引出し領域LEの切欠き64aの周囲に前記切欠きから所定の間隔以上離間するように内部電極が存在しないマージン領域M7が設けられている。また、同様に前記第2の内部電極62bは、略長方形状の前記第2の誘電体層61a2の一方の主面上の一方の短辺に接するように配設されており、前記内部電極引出し領域LEの切欠き64bの周囲に前記切欠きから所定の間隔以上離間するように内部電極が存在しないマージン領域M8が設けられている。 Specifically, as shown in FIG. 10, external electrodes 66a and 66b are disposed in the vicinity of the end surfaces of the end surface in the longitudinal direction of the substantially rectangular parallelepiped chip body 65 and the four side surfaces adjacent to the end surfaces in the longitudinal direction. In the vicinity of the external electrodes 66a and 66b on one of the four side surfaces of the chip body 65, notches 64a, 64a, 64b and 64b having circular openings are formed on the chip body. A plurality of lines are formed symmetrically with respect to a center line extending in the longitudinal direction. As in the first embodiment, the chip body 65 has a first dielectric having a substantially rectangular first internal electrode 62a on one main surface side, as shown in FIGS. The body layers 61a1 and the second dielectric layers 61a2 provided with the substantially rectangular second internal electrodes 62b on one main surface side are alternately stacked and connected to different external electrodes 66a and 66b. The internal electrode facing region OP in which the internal electrodes 62a and 62b face each other with the dielectric layers 61a1 and 61a2 interposed therebetween, and the internal electrodes 62a and 62b in the internal electrode facing region OP alternate with the external electrodes 66a and 66b. An internal electrode extraction region LE to be extracted is configured. A pair of notches 64a, 64a, 64b and 64b are formed in the internal electrode lead-out region LE. A plurality of dielectric layers 61b1 serving as a first cover layer are disposed on one end side in the stacking direction of the plurality of dielectric layers 61a1 and 61a2 provided with the internal electrodes 62a and 62b. A plurality of dielectric layers 61b2 serving as a second cover layer are provided on the end side. The plurality of dielectric layers 61b1 serving as the first cover layer are respectively similar to the positions overlapping the respective notches 64a and 64b of the dielectric layers 61a1 and 61a2 having the internal electrodes 62a and 62b in the stacking direction. Cutouts 64a and 64b are formed in the upper part. On the other hand, the notches are not formed in the plurality of dielectric layers 61b2 serving as the second cover layer. The first internal electrode 62a is disposed so as to be in contact with one short side on one main surface of the first dielectric layer 61a1 having a substantially rectangular shape, and cuts the internal electrode lead-out region LE. A margin region M7 in which no internal electrode exists is provided around the notch 64a so as to be separated from the notch by a predetermined distance or more. Similarly, the second internal electrode 62b is disposed so as to be in contact with one short side on one main surface of the substantially rectangular second dielectric layer 61a2, and the internal electrode lead-out A margin region M8 in which no internal electrode exists is provided around the notch 64b of the region LE so as to be separated from the notch by a predetermined distance or more.

上記のように本実施形態の積層セラミックコンデンサ60は、図11にそのチップ本体65の分解斜視図を示すように、該チップ本体65における、互いに異なる外部電極66a,66bに接続される内部電極62a、62b同士が前記誘電体層61a1,61a2を挟んで対向する内部電極対向領域OPの一方の前記内部電極62aが前記外部電極66aに引き出される内部電極引出し領域LEには切欠き64aが形成されているとともに、前記内部電極対向領域OPの他方の前記内部電極62bが前記外部電極66bに引き出される内部電極引出し領域LEには切欠き64bが形成されている。本実施形態は、チップ本体の機械的強度が比較的低い積層セラミックコンデンサに好適である。 As described above, the multilayer ceramic capacitor 60 according to the present embodiment includes an internal electrode 62a connected to different external electrodes 66a and 66b in the chip body 65 as shown in an exploded perspective view of the chip body 65 in FIG. , 62b are opposed to each other with the dielectric layers 61a1 and 61a2 interposed therebetween, and a notch 64a is formed in the internal electrode lead region LE in which one internal electrode 62a of the internal electrode facing region OP is drawn to the external electrode 66a. In addition, a notch 64b is formed in the internal electrode extraction region LE where the other internal electrode 62b of the internal electrode facing region OP is extracted to the external electrode 66b. This embodiment is suitable for a multilayer ceramic capacitor in which the mechanical strength of the chip body is relatively low.

次に、本発明の積層セラミックコンデンサの第5の実施形態について、図12及び図13を参照して説明する。図12は第5の実施形態の積層セラミックコンデンサ70の全体構造を説明するための外観斜視図である。図13は、前記積層セラミックコンデンサ70のチップ本体75の内部構造を説明するための分解斜視図である。 Next, a fifth embodiment of the multilayer ceramic capacitor of the present invention will be described with reference to FIGS. FIG. 12 is an external perspective view for explaining the overall structure of the multilayer ceramic capacitor 70 of the fifth embodiment. FIG. 13 is an exploded perspective view for explaining the internal structure of the chip body 75 of the multilayer ceramic capacitor 70.

図12及び図13に示すように、本実施形態の積層セラミックコンデンサ70は、複数の誘電体層71a1,71a2,71b1,71b2と複数の略長方形状の内部電極72a,72bとを交互に積層してなるチップ本体75と、このチップ本体75の表面に形成され、かつ外部の回路基板のランド電極と接続する一対の外部電極76a,76bとからなり、前記複数の内部電極72a,72bが前記一対の外部電極76a,76bに交互に電気的に接続されている。 そして、前記チップ本体75における、互いに異なる外部電極76a,76bに接続される内部電極72a,72b同士が前記誘電体層71a1,71a2を挟んで対向する内部電極対向領域OPと、前記内部電極対向領域OPの前記各内部電極72a,72bが前記外部電極76a,76bに交互に引き出される内部電極引出し領域LEと、のうち、前記内部電極引出し領域LEにそれぞれ切欠き74a,74bが形成されているものである。 As shown in FIGS. 12 and 13, the multilayer ceramic capacitor 70 of this embodiment has a plurality of dielectric layers 71 a 1, 71 a 2, 71 b 1, 71 b 2 and a plurality of substantially rectangular internal electrodes 72 a, 72 b that are alternately stacked. A chip body 75 and a pair of external electrodes 76a and 76b formed on the surface of the chip body 75 and connected to land electrodes of an external circuit board, and the plurality of internal electrodes 72a and 72b are the pair of external electrodes. The external electrodes 76a and 76b are alternately electrically connected. In the chip body 75, the internal electrodes 72a and 72b connected to the different external electrodes 76a and 76b are opposed to each other with the dielectric layers 71a1 and 71a2 interposed therebetween, and the internal electrode facing region. Of the internal electrode extraction regions LE in which the internal electrodes 72a and 72b of the OP are alternately extracted to the external electrodes 76a and 76b, notches 74a and 74b are formed in the internal electrode extraction region LE, respectively. It is.

具体的
には、図12に示すように、略直方体状のチップ本体75の長手方向の端面及び該端面に隣接するそれぞれ長手方向に延びる4つの側面のそれぞれ前記端面の近傍に外部電極76a,76bが設けられており、前記チップ本体75の4つの側面のうちの1つの側面の前記外部電極76a,76bの近傍にそれぞれ開口形状が長穴形状の切欠き74a,74bが前記チップ本体75の長手方向に延びる中心線から一方側に偏った位置に前記内部電極対向領域OPを挟んで点対称に形成されている。前記チップ本体75は、前記第1の実施形態と同様に、図12及び図13に示すように、一方の主面側に略長方形状の第1の内部電極72aが設けられた第1の誘電体層71a1と、一方の主面側に略長方形状の第2の内部電極72bが設けられた第2の誘電体層71a2とが交互に積層され、互いに異なる外部電極76a,76bに接続される内部電極72a,72b同士が前記誘電体層71a1,71a2を挟んで対向する内部電極対向領域OPと、前記内部電極対向領域OPの前記各内部電極72a,72bが前記外部電極76a,76bに交互に引き出される内部電極引出し領域LEとを構成している。そして、前記内部電極引出し領域LEにそれぞれ切欠き74a,74bが形成されている。また、前記内部電極72a,72bが設けられた複数の誘電体層71a1,71a2の積層方向の一端側には、第1のカバー層となる複数の誘電体層71b1が配設されるとともに、他端側には第2のカバー層となる複数の誘電体層71b2とを有する。前記第1のカバー層となる複数の誘電体層71b1には、それぞれ、前記内部電極72a,72bを有する誘電体層71a1,71a2の前記それぞれの切欠き74a,74bに積層方向に重なる位置に同様に切欠き74a,74bが形成されている。これに対し、第2のカバー層となる複数の誘電体層71b2には、前記切欠きは形成されていない。前記第1の内部電極72aは、略長方形状の前記第1の誘電体層71a1の一方の主面上の一方の短辺に接するように配設されており、前記内部電極引出し領域LEの切欠き74aの周囲に前記切欠きから所定の間隔以上離間するように内部電極が存在しないマージン領域M9が設けられている。また、同様に前記第2の内部電極72bは、略長方形状の前記第2の誘電体層71a2の一方の主面上の一方の短辺に接するように配設されており、前記内部電極引出し領域LEの切欠き74bの周囲に前記切欠きから所定の間隔以上離間するように内部電極が存在しないマージン領域M10が設けられている。
Specifically, as shown in FIG. 12, external electrodes 76a and 76b are disposed in the vicinity of the end surfaces of the end surface in the longitudinal direction of the substantially rectangular parallelepiped chip body 75 and the four side surfaces adjacent to the end surfaces in the longitudinal direction. In the vicinity of the external electrodes 76a and 76b on one of the four side surfaces of the chip body 75, notches 74a and 74b each having a long hole shape are formed in the longitudinal direction of the chip body 75. It is formed point-symmetrically across the internal electrode facing region OP at a position deviated to one side from a center line extending in the direction. As in the first embodiment, the chip body 75 has a first dielectric having a substantially rectangular first internal electrode 72a on one main surface side, as shown in FIGS. The body layer 71a1 and the second dielectric layer 71a2 provided with the substantially rectangular second internal electrode 72b on one main surface side are alternately stacked and connected to different external electrodes 76a and 76b. The internal electrodes 72a and 72b are opposed to each other with the dielectric layers 71a1 and 71a2 interposed therebetween, and the internal electrodes 72a and 72b in the internal electrode facing region OP are alternately arranged on the external electrodes 76a and 76b. An internal electrode extraction region LE to be extracted is configured. Cutouts 74a and 74b are formed in the internal electrode lead-out region LE, respectively. A plurality of dielectric layers 71b1 serving as a first cover layer are disposed on one end side in the stacking direction of the plurality of dielectric layers 71a1 and 71a2 provided with the internal electrodes 72a and 72b. A plurality of dielectric layers 71b2 serving as a second cover layer are provided on the end side. The plurality of dielectric layers 71b1 serving as the first cover layer are respectively similar to the positions overlapping the respective notches 74a and 74b of the dielectric layers 71a1 and 71a2 having the internal electrodes 72a and 72b in the stacking direction. Notches 74a and 74b are formed in the upper and lower portions. On the other hand, the notches are not formed in the plurality of dielectric layers 71b2 serving as the second cover layer. The first internal electrode 72a is disposed so as to be in contact with one short side on one main surface of the first dielectric layer 71a1 having a substantially rectangular shape, and cuts the internal electrode lead-out region LE. A margin region M9 in which no internal electrode exists is provided around the notch 74a so as to be separated from the notch by a predetermined distance or more. Similarly, the second internal electrode 72b is disposed so as to be in contact with one short side on one main surface of the substantially rectangular second dielectric layer 71a2, and the internal electrode lead-out A margin region M10 in which no internal electrode exists is provided around the notch 74b in the region LE so as to be separated from the notch by a predetermined distance or more.

上記のように本実施形態の積層セラミックコンデンサ70は、図13にそのチップ本体75の分解斜視図を示すように、該チップ本体75における、互いに異なる外部電極76a,76bに接続される内部電極72a、72b同士が前記誘電体層71a1,71a2を挟んで対向する内部電極対向領域OPの一方の前記内部電極72aが前記外部電極76aに引き出される内部電極引出し領域LEには切欠き74aが形成されているとともに、前記内部電極対向領域OPの他方の前記内部電極72bが前記外部電極76bに引き出される内部電極引出し領域LEには切欠き74bが形成されている。本実施形態の作用効果は、先の第1の実施形態と同様であるため、説明を省略する。 As described above, the multilayer ceramic capacitor 70 according to the present embodiment includes an internal electrode 72a connected to different external electrodes 76a and 76b in the chip body 75, as shown in an exploded perspective view of the chip body 75 in FIG. 72b is formed in the internal electrode lead-out region LE where one of the internal electrodes 72a of the internal electrode facing region OP facing each other across the dielectric layers 71a1 and 71a2 is drawn out to the external electrode 76a. In addition, a notch 74b is formed in the internal electrode extraction region LE where the other internal electrode 72b of the internal electrode facing region OP is extracted to the external electrode 76b. Since the operational effects of this embodiment are the same as those of the first embodiment, description thereof is omitted.

本発明によれば、薄型の各種電子機器に用いられる積層セラミックコンデンサ及びコンデンサ実装回路基板に好適である。 The present invention is suitable for multilayer ceramic capacitors and capacitor-mounted circuit boards used in various thin electronic devices.

本発明の積層セラミックコンデンサの第1の実施形態の全体構造を示す外観斜視図及び断面図である。1A and 1B are an external perspective view and a cross-sectional view showing an overall structure of a first embodiment of a multilayer ceramic capacitor of the present invention. 前記第1の実施形態の積層セラミックコンデンサの内部構造を示す分解斜視図である。It is a disassembled perspective view which shows the internal structure of the multilayer ceramic capacitor of the said 1st Embodiment. 前記第1の実施形態の積層セラミックコンデンサの製造方法の例を説明するための斜視図である。It is a perspective view for demonstrating the example of the manufacturing method of the multilayer ceramic capacitor of the said 1st Embodiment. 前記第1の実施形態の積層セラミックコンデンサを回路基板に実装する方法を説明するための要部の斜視図である。It is a perspective view of the principal part for demonstrating the method to mount the multilayer ceramic capacitor of the said 1st Embodiment on a circuit board. 前記第1の実施形態の積層セラミックコンデンサを用いた本発明のコンデンサ実装回路基板の第1の実施形態の要部の構造を示す斜視図及び断面図である。It is the perspective view and sectional drawing which show the structure of the principal part of 1st Embodiment of the capacitor | condenser mounting circuit board of this invention using the multilayer ceramic capacitor of the said 1st Embodiment. 本発明の積層セラミックコンデンサの第2の実施形態の全体構造を示す外観斜視図及び断面図である。It is the external appearance perspective view and sectional drawing which show the whole structure of 2nd Embodiment of the multilayer ceramic capacitor of this invention. 前記第2の実施形態の積層セラミックコンデンサを用いた本発明のコンデンサ実装回路基板の第2の実施形態の要部の構造を示す斜視図及び断面図である。It is the perspective view and sectional drawing which show the structure of the principal part of 2nd Embodiment of the capacitor | condenser mounting circuit board of this invention using the multilayer ceramic capacitor of the said 2nd Embodiment. 本発明の積層セラミックコンデンサの第3の実施形態の全体構造を示す断面図である。It is sectional drawing which shows the whole structure of 3rd Embodiment of the multilayer ceramic capacitor of this invention. 前記第3の実施形態の積層セラミックコンデンサの内部構造を説明するための分解斜視図である。It is a disassembled perspective view for demonstrating the internal structure of the multilayer ceramic capacitor of the said 3rd Embodiment. 本発明の積層セラミックコンデンサの第4の実施形態の全体構造を示す外観斜視図である。It is an external appearance perspective view which shows the whole structure of 4th Embodiment of the multilayer ceramic capacitor of this invention. 前記第4の実施形態の積層セラミックコンデンサの内部構造を説明するための分解斜視図である。It is a disassembled perspective view for demonstrating the internal structure of the multilayer ceramic capacitor of the said 4th Embodiment. 本発明の積層セラミックコンデンサの第5の実施形態の全体構造を示す外観斜視図である。It is an external appearance perspective view which shows the whole structure of 5th Embodiment of the multilayer ceramic capacitor of this invention. 前記第5の実施形態の積層セラミックコンデンサの内部構造を説明するための分解斜視図である。It is a disassembled perspective view for demonstrating the internal structure of the multilayer ceramic capacitor of the said 5th Embodiment. 背景技術の一例を示す外観斜視図である。It is an external appearance perspective view which shows an example of background art.

符号の説明Explanation of symbols

10:積層セラミックコンデンサ11:セラミックグリーンシート積層体11a1,11a2,11b1,11b2:誘電体層12a,12b:内部電極13:積層体チップ14,14a,14b:切欠き15:チップ本体16a,16b:外部電極20:コンデンサ実装回路基板21:回路基板22a,22b:配線23a,23b:ランド電極24a,24b:ハンダ30:積層セラミックコンデンサ32a,32b:内部電極34a,34b:切欠き35:チップ本体36a,36b:外部電極37a,37b:絶縁性樹脂40:コンデンサ実装回路基板41:回路基板42a,42b:配線43a,43b:ランド電極44a,44b:ハンダ50:積層セラミックコンデンサ51a1,51a2,51b1,51b2:誘電体層52a,52b:内部電極54a,54b:切欠き55:チップ本体56a,56b:外部電極60:積層セラミックコンデンサ61a1,61a2,61b1,61b2:誘電体層62a,62b:内部電極64a,64b:切欠き65:チップ本体66a,66b:外部電極70:積層セラミックコンデンサ71a1,71a2,71b1,71b2:誘電体層72a,72b:内部電極74a,74b:切欠き75:チップ本体76a,76b:外部電極OP:内部電極対向領域LE:内部電極引出し領域M1,M2,M3,M4,M5,M6,M7,N8,N9,M10:マージン領域 10: multilayer ceramic capacitor 11: ceramic green sheet laminates 11a1, 11a2, 11b1, 11b2: dielectric layers 12a, 12b: internal electrodes 13: laminate chips 14, 14a, 14b: notches 15: chip bodies 16a, 16b: External electrode 20: Capacitor-mounted circuit board 21: Circuit boards 22a, 22b: Wirings 23a, 23b: Land electrodes 24a, 24b: Solder 30: Multilayer ceramic capacitors 32a, 32b: Internal electrodes 34a, 34b: Notches 35: Chip body 36a 36b: External electrodes 37a, 37b: Insulating resin 40: Capacitor-mounted circuit board 41: Circuit boards 42a, 42b: Wiring 43a, 43b: Land electrodes 44a, 44b: Solder 50: Multilayer ceramic capacitors 51a1, 51a2, 51b1, 51b2 : Dielectric layer 5 a, 52b: internal electrodes 54a, 54b: notches 55: chip bodies 56a, 56b: external electrodes 60: multilayer ceramic capacitors 61a1, 61a2, 61b1, 61b2: dielectric layers 62a, 62b: internal electrodes 64a, 64b: notches 65: Chip bodies 66a, 66b: External electrodes 70: Multilayer ceramic capacitors 71a1, 71a2, 71b1, 71b2: Dielectric layers 72a, 72b: Internal electrodes 74a, 74b: Notches 75: Chip bodies 76a, 76b: External electrodes OP: Internal electrode facing region LE: Internal electrode lead-out region M1, M2, M3, M4, M5, M6, M7, N8, N9, M10: Margin region

Claims (4)

複数の誘電体層と複数の略長方形状の内部電極とを交互に積層してなるチップ本体と、このチップ本体の表面に形成され、かつ外部の回路基板のランド電極に接続する一対の外部電極とからなり、前記複数の内部電極が前記一対の外部電極に交互に電気的に接続された積層セラミックコンデンサにおいて、前記チップ本体における、前記一対の外部電極のうちの互いに異なる外部電極に接続される内部電極同士が前記誘電体層を挟んで対向する内部電極対向領域と、前記内部電極対向領域の前記各内部電極が前記外部電極に交互に引き出される内部電極引出し領域と、のうち、前記内部電極引出し領域にそれぞれ切欠きが形成されていることを特徴とする積層セラミックコンデンサ。 A chip body formed by alternately laminating a plurality of dielectric layers and a plurality of substantially rectangular internal electrodes, and a pair of external electrodes formed on the surface of the chip body and connected to a land electrode of an external circuit board In the multilayer ceramic capacitor in which the plurality of internal electrodes are alternately electrically connected to the pair of external electrodes, the chip body is connected to different external electrodes of the pair of external electrodes. Of the internal electrode facing region in which the internal electrodes face each other with the dielectric layer in between, and the internal electrode leading region in which the internal electrodes in the internal electrode facing region are alternately pulled out to the external electrode, the internal electrode A multilayer ceramic capacitor, wherein a notch is formed in each of the drawing regions. 前記内部電極引出し領域の前記切欠きの周囲に各内部電極が存在しないマージン領域を設けたことを特徴とする請求項1記載の積層セラミックコンデンサ。 2. The multilayer ceramic capacitor according to claim 1, wherein a margin region in which each internal electrode does not exist is provided around the notch in the internal electrode lead-out region. 前記内部電極引出し領域の前記切欠きの内部に絶縁性樹脂が充填されたことを特徴とする請求項1記載の積層セラミックコンデンサ。 The multilayer ceramic capacitor according to claim 1, wherein an insulating resin is filled in the cutout in the internal electrode lead-out region. 請求項1〜3のうちのいずれかに記載の積層セラミックコンデンサの外部電極が回路基板のランド電極に導電固着されていることを特徴とするコンデンサ実装回路基板。 4. A capacitor-mounted circuit board, wherein the external electrode of the multilayer ceramic capacitor according to claim 1 is conductively fixed to a land electrode of the circuit board.
JP2007038620A 2007-02-19 2007-02-19 Multilayer ceramic capacitor and capacitor mounting circuit board Withdrawn JP2008205135A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013055124A (en) * 2011-09-01 2013-03-21 Murata Mfg Co Ltd Electronic component and selection method
WO2015105719A1 (en) * 2014-01-13 2015-07-16 Apple Inc. Acoustic noise cancellation in multi-layer capacitors
US20220301776A1 (en) * 2019-09-13 2022-09-22 Kyocera Corporation Film capacitor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013055124A (en) * 2011-09-01 2013-03-21 Murata Mfg Co Ltd Electronic component and selection method
WO2015105719A1 (en) * 2014-01-13 2015-07-16 Apple Inc. Acoustic noise cancellation in multi-layer capacitors
US9672986B2 (en) 2014-01-13 2017-06-06 Apple Inc. Acoustic noise cancellation in multi-layer capacitors
EP3754678B1 (en) * 2014-01-13 2024-01-10 Apple Inc. Acoustic noise cancellation in multi-layer capacitors
US20220301776A1 (en) * 2019-09-13 2022-09-22 Kyocera Corporation Film capacitor device

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