JP2008175545A - Electrode state judging device and electrode state deciding method - Google Patents

Electrode state judging device and electrode state deciding method Download PDF

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JP2008175545A
JP2008175545A JP2007006710A JP2007006710A JP2008175545A JP 2008175545 A JP2008175545 A JP 2008175545A JP 2007006710 A JP2007006710 A JP 2007006710A JP 2007006710 A JP2007006710 A JP 2007006710A JP 2008175545 A JP2008175545 A JP 2008175545A
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electrode
luminance
state
solder
threshold value
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JP4983267B2 (en
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Minehiko Goto
峰彦 後藤
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide an electrode state deciding device for deciding the quality of an electrode state, after the transfer of solder including the omission of bumps, and to provide an electrode state deciding method. <P>SOLUTION: A soldering bad state is decided when the brightness at a place where the bump 16 is formed exceeds a first threshold TH1 and a soldering proper state is decided when the luminance is present between the first threshold TH1 and a second threshold TH2 while a bump omission state is decided, when the brightness is less than the second threshold TH2. Since the quality of paste transfer including the omission of the bump can be decided on the basis of the brightness, the device or process related to decision can be simplified and the reduction of cost and the enhancement, in the production efficiency can be realized. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、電極欠落を含む半田転写後の電極状態の良否を判定する装置および方法に関するものである。   The present invention relates to an apparatus and a method for determining the quality of an electrode state after a solder transfer including a missing electrode.

従来、電子部品の接続用のバンプ(電極)にペーストを供給するペースト供給装置が知られている(特許文献1参照)。ペースト供給装置は、電子部品の実装ラインに配置され、実装前の電子部品のバンプをペースト状の半田に浸し、バンプに半田を転写する機能を備えている。半田が転写された電子部品は、基板上に形成されたランド(電極)にバンプが搭載され、その後のリフローにより半田が溶融することで両電極間の半田接合が行われる。
特許第3289604号公報
2. Description of the Related Art Conventionally, a paste supply device that supplies paste to bumps (electrodes) for connecting electronic components is known (see Patent Document 1). The paste supply device is disposed on a mounting line for electronic components, and has a function of immersing bumps of electronic components before mounting in paste-like solder and transferring the solder to the bumps. In the electronic component to which the solder has been transferred, bumps are mounted on lands (electrodes) formed on the substrate, and the solder is melted by subsequent reflow, whereby solder joining between the two electrodes is performed.
Japanese Patent No. 3289604

このような半田接合による実装品質を高レベルで維持するためには、電子部品と基板の電気的、物理的な接合を担う半田がバンプに的確に転写されているかどうかを実装に先立って確認する必要がある。同時に、バンプ自体の欠落を確認し、欠落が生じている電子部品を実装ラインから排除する必要がある。   In order to maintain the mounting quality by such solder bonding at a high level, it is confirmed prior to mounting whether or not the solder responsible for the electrical and physical bonding between the electronic component and the board is accurately transferred to the bump. There is a need. At the same time, it is necessary to confirm the absence of the bump itself and to remove the electronic component in which the loss has occurred from the mounting line.

しかしながら、従来、半田転写状態およびバンプ欠落を的確かつ迅速に確認するための適切な技術が存在しなかった。そのため、バンプ欠落の確認を半田転写状態の確認と別途で行うことを余儀なくされ、実装にかかるスループットの低下を招来したり、確認が的確の行われないことで、バンプ欠落部品が良品と誤認されたまま実装が行われて品質不良等の問題を招来したりする場合があった。   However, conventionally, there has been no appropriate technique for accurately and quickly confirming the solder transfer state and the missing bump. For this reason, it is necessary to confirm the missing bump separately from the confirmation of the solder transfer state, which leads to a decrease in the throughput of mounting, or because the confirmation is not performed accurately, the missing bump component is mistaken as a good product. There are cases where mounting is performed as it is, causing problems such as poor quality.

そこで本発明は、バンプ欠落を含む半田転写後の電極状態の良否を判定する電極状態判定装置および電極状態判定方法を提供することを目的とする。   Therefore, an object of the present invention is to provide an electrode state determination device and an electrode state determination method for determining whether or not an electrode state after solder transfer including a missing bump is good.

請求項1記載の電極状態判定装置は、電子部品に形成された電極の状態を判定する電極状態判定装置であって、前記電極の形成箇所における輝度を検出する輝度検出手段と、前記電極にペースト状の半田を転写した後の前記電極の形成箇所における輝度と半田を転写する前の前記電極の形成箇所における輝度との間に設定された第1の閾値と、前記電極に半田を転写した後の前記電極の形成箇所における輝度と前記電極が欠落しているときの前記電極の形成箇所における輝度との間に設定された第2の閾値とを予め記憶した記憶手段と、前記電極の形成箇所における輝度が前記第1の閾値を上回っているときに前記電極は半田不良状態であると判定し、前記電極の形成箇所における輝度が前記第1の閾値と前記第2の閾値の間にあるときに前記電極は半田良好状態であると判定し、前記電極の形成箇所における輝度が前記第2の閾値を下回っているときに前記電極は欠落状態であると判定する判定手段と、を備えた。   The electrode state determination device according to claim 1 is an electrode state determination device for determining a state of an electrode formed on an electronic component, the luminance detection means for detecting the luminance at a position where the electrode is formed, and a paste on the electrode A first threshold value set between the luminance at the location where the electrode is formed after transferring the solder and the luminance at the location where the electrode is formed before transferring the solder, and after transferring the solder to the electrode Storage means for storing in advance a second threshold value set between the luminance at the electrode formation location and the luminance at the electrode formation location when the electrode is missing, and the electrode formation location When the brightness of the electrode exceeds the first threshold, it is determined that the electrode is in a solder failure state, and the brightness at the location where the electrode is formed is between the first threshold and the second threshold Before Electrode was determined to be solder good condition, with a, a determination unit that the electrode is a missing condition when the brightness in the area where the electrode is below the second threshold value.

請求項2記載の電極状態判定方法は、電子部品に形成された電極の状態を判定する電極状態判定方法であって、前記電極にペースト状の半田を転写した後の前記電極の形成箇所における輝度を検出する工程と、前記電極の形成箇所における輝度が第1の閾値を上回っているときに前記電極は半田不良状態であると判定し、前記電極の形成箇所における輝度が第1の閾値と第2の閾値の間にあるときに前記電極は半田良好状態であると判定し、前
記電極の形成箇所における輝度が第2の閾値を下回っているときに前記電極は欠落状態であると判定する工程と、を含む。
The electrode state determination method according to claim 2 is an electrode state determination method for determining a state of an electrode formed on an electronic component, wherein brightness at a position where the electrode is formed after a paste-like solder is transferred to the electrode. And detecting that the electrode is in a poor solder state when the luminance at the electrode formation location exceeds a first threshold value, and the luminance at the electrode formation location is equal to the first threshold value and the first threshold value. Determining that the electrode is in a good solder state when it is between two threshold values, and determining that the electrode is in a missing state when the luminance at the location where the electrode is formed is below a second threshold value. And including.

本発明によれば、電極形成箇所の輝度に基づいて電極欠落を含むペースト転写後の電極状態の良否を判定するので、判定に要する装置や工程を簡略化することが可能となり、コストの低減と生産効率の向上を実現することができる。   According to the present invention, since the quality of the electrode state after the paste transfer including the missing electrode is determined based on the brightness of the electrode forming portion, it is possible to simplify the apparatus and process required for the determination, and to reduce the cost. Improvement in production efficiency can be realized.

本発明の実施の形態について図面を参照して説明する。図1は本発明の実施の形態の電子部品実装装置の全体構成図、図2は本発明の実施の形態の電極状態判定装置の構成図、図3はバンプ形成箇所における輝度と閾値との関係を示した説明図、図4は本発明の実施の形態の電極状態判定方法の手順を示すフローチャートである。   Embodiments of the present invention will be described with reference to the drawings. 1 is an overall configuration diagram of an electronic component mounting apparatus according to an embodiment of the present invention, FIG. 2 is a configuration diagram of an electrode state determination apparatus according to an embodiment of the present invention, and FIG. 3 is a relationship between brightness and threshold at a bump formation location. FIG. 4 is a flowchart showing the procedure of the electrode state determination method according to the embodiment of the present invention.

まず、本発明の実施の形態の電子部品実装装置について説明する。図1において、基台1は電子部品実装装置のベースである。基台1の略中央に配設された基板搬送装置2は、実装前の基板3を電子部品実装装置に搬入し、実装後の基板3を電子部品実装装置から搬出する。基板搬送装置2には基板3をクランプして固定する基板固定装置が備えられ、実装中の基板3を所定の位置で一時的に固定するようになっている。基板搬送装置2の両側方に配設された電子部品供給装置4は、内部に収納された複数の電子部品を供給口5に順次供給する。供給された電子部品は実装ヘッド6によりピックアップされて基板3に実装される。実装ヘッド6は、基台1に配設された直交ロボット7により基台1の上方で水平移動可能に支持されている。   First, an electronic component mounting apparatus according to an embodiment of the present invention will be described. In FIG. 1, a base 1 is a base of an electronic component mounting apparatus. The board transport device 2 disposed substantially at the center of the base 1 carries the board 3 before mounting into the electronic component mounting apparatus and carries out the board 3 after mounting from the electronic component mounting apparatus. The substrate transfer device 2 is provided with a substrate fixing device that clamps and fixes the substrate 3, and temporarily fixes the substrate 3 being mounted at a predetermined position. The electronic component supply device 4 disposed on both sides of the substrate transfer device 2 sequentially supplies a plurality of electronic components accommodated in the supply port 5. The supplied electronic component is picked up by the mounting head 6 and mounted on the substrate 3. The mounting head 6 is supported by the orthogonal robot 7 disposed on the base 1 so as to be horizontally movable above the base 1.

基板搬送装置2と電子部品供給装置4の間には2種のカメラ10、11とペースト転写部12、電子部品回収部13が配設されている。第1のカメラ10は、実装ヘッド6によりピックアップされた電子部品を下方から撮像する撮像装置であり、撮像された電子部品の画像から電子部品の外形をパターン解析して電子部品の位置と角度の認識を行う。実装ヘッド6は、この認識結果に基づいて位置と角度を補正した電子部品を基板3に実装する。ペースト転写部12は、上部にペースト状の半田を貯留している。この半田は電子部品の電極と基板3の電極の接合に使用され、電極を下に向けて実装ヘッド6にピックアップされた電子部品をペースト転写部12に貯留されたペーストに浸すと電極に転写されるようになっている。第2のカメラ11は、ペースト転写後の電極を撮像する撮像装置であり、撮像対象からの反射光を感知する複数の光電素子が格子状に配列されたCCDやCMOS等が備えられている。   Two types of cameras 10, 11, a paste transfer unit 12, and an electronic component recovery unit 13 are disposed between the substrate transport device 2 and the electronic component supply device 4. The first camera 10 is an imaging device that images an electronic component picked up by the mounting head 6 from below, and pattern analysis is performed on the outer shape of the electronic component from the captured electronic component image to determine the position and angle of the electronic component. Recognize. The mounting head 6 mounts an electronic component whose position and angle are corrected based on the recognition result on the substrate 3. The paste transfer unit 12 stores paste-like solder at the top. This solder is used to join the electrode of the electronic component and the electrode of the substrate 3. When the electronic component picked up by the mounting head 6 is immersed in the paste stored in the paste transfer unit 12 with the electrode facing downward, the solder is transferred to the electrode. It has become so. The second camera 11 is an imaging device that images the electrode after paste transfer, and includes a CCD, a CMOS, or the like in which a plurality of photoelectric elements that sense reflected light from the imaging target are arranged in a grid pattern.

次に、本発明の実施の形態の電極状態判定装置について説明する。図2において、電極状態判定装置は、第2のカメラ11と、輝度検出部14と、記憶部17と、電極状態判定部18とを備えている。輝度検出部14は、第2のカメラ11の複数の光電素子に感知された反射光の強弱に基づいて撮像対象の輝度を検出する輝度検出手段としての機能を有する。第2のカメラ11の撮像対象は電子部品15の外部接続用電極を形成する金属製のバンプ16であるため、反射率が高く、高レベルの輝度で検出される(図3(a)参照)。一方、バンプ16にペーストを転写すると反射率が低くなるため、ペーストが転写されたバンプ16は低レベルの輝度で検出される(図3(b)参照)。また、バンプ16が欠落している場合、欠落箇所は電子部品15の樹脂製の筐体が露出した状態となるため、ほとんど光を反射せず、さらに低レベルの輝度で検出される(図3(d)参照)。   Next, an electrode state determination apparatus according to an embodiment of the present invention will be described. In FIG. 2, the electrode state determination device includes a second camera 11, a luminance detection unit 14, a storage unit 17, and an electrode state determination unit 18. The luminance detection unit 14 has a function as luminance detection means for detecting the luminance of the imaging target based on the intensity of the reflected light sensed by the plurality of photoelectric elements of the second camera 11. Since the imaging object of the second camera 11 is the metal bump 16 that forms the external connection electrode of the electronic component 15, the reflectance is high and the detection is performed with a high level of brightness (see FIG. 3A). . On the other hand, when the paste is transferred to the bumps 16, the reflectance is lowered, so that the bumps 16 to which the paste has been transferred are detected with a low level of brightness (see FIG. 3B). Further, when the bump 16 is missing, the missing part is in a state in which the resin casing of the electronic component 15 is exposed, so that it hardly reflects light and is detected at a lower level of brightness (FIG. 3). (See (d)).

記憶部17は、予め所定の輝度に設定された2つの閾値を記憶する記憶手段としての機能を有する。このうち第1の閾値TH1は、図3に示すように、ペーストが転写された状態におけるバンプ16の輝度とペーストが転写されていない状態におけるバンプ16の輝
度との間に設定されており、第2の閾値TH2は、ペーストが転写された状態におけるバンプ16の輝度とバンプ欠落箇所における輝度との間に設定されている。
The memory | storage part 17 has a function as a memory | storage means to memorize | store two threshold values preset to predetermined brightness | luminance. Among these, as shown in FIG. 3, the first threshold value TH1 is set between the luminance of the bump 16 when the paste is transferred and the luminance of the bump 16 when the paste is not transferred. The threshold value TH2 of 2 is set between the luminance of the bump 16 in a state where the paste is transferred and the luminance at the bump missing portion.

電極状態判定部18は、輝度検出部14により検出された輝度と記憶部17に記憶された2つの閾値とを比較して電極状態の判定を行う判定手段としての機能を有する。電極状態には、バンプ16の接合面全体に適量のペーストが転写された半田良好状態と、適量に転写されていない半田不良状態と、バンプが欠落したバンプ欠落状態の3態様がある。電極状態判定部18は、輝度検出部14により検出された輝度が第1の閾値を上回っているときは半田不良状態であり、第1の閾値と第2の閾値との間にあるときは半田良好状態であり、第2の閾値を下回っているときはバンプ欠落状態であると判定する。   The electrode state determination unit 18 has a function as a determination unit that determines the electrode state by comparing the luminance detected by the luminance detection unit 14 with two threshold values stored in the storage unit 17. The electrode state has three modes: a good solder state in which an appropriate amount of paste is transferred to the entire bonding surface of the bump 16, a poor solder state in which an appropriate amount is not transferred, and a bump missing state in which bumps are missing. The electrode state determination unit 18 is in a soldering failure state when the luminance detected by the luminance detection unit 14 exceeds the first threshold value, and is soldered when the luminance is between the first threshold value and the second threshold value. When it is in a good state and is below the second threshold, it is determined that the bump is missing.

図3(c)において、バンプ16の転写面に転写むらがある場合、適量のペーストが転写された領域(転写良好領域)16aにおいては第1の閾値を下回る輝度を示し、適量のペーストが転写されていない領域(転写不良領域)16bにおいては第1の閾値を上回る輝度を示すことがある。基板や電子部品の品種によってはある程度の転写むらがあっても接合品質上許容できる場合もあるので、第1の閾値を上回る輝度の光を受光した光電素子数がバンプ16の転写面全体に対応する光電素子数に占める比率(以下、輝度異常比率という)に基づいて電極状態の良否を判定するようにしている。記憶部17には、基板や電子部品の品種に対応して予め設定された許容値(許容比率)が記憶されており、輝度異常比率が許容比率を下回っているときには第1の閾値を下回っている場合と同等に扱われ、半田良好状態にあると判定され、輝度異常比率が許容比率を上回っているときには第1の閾値を上回っている場合と同等に扱われ、半田不良状態にあると判定される。   In FIG. 3 (c), when there is uneven transfer on the transfer surface of the bump 16, the region where the appropriate amount of paste is transferred (transfer good region) 16a exhibits a luminance lower than the first threshold value, and the appropriate amount of paste is transferred. In the unfinished region (transfer defective region) 16b, the luminance exceeding the first threshold value may be exhibited. Depending on the type of substrate or electronic component, even if there is a certain amount of transfer unevenness, it may be acceptable in terms of bonding quality, so the number of photoelectric elements that receive light with a luminance exceeding the first threshold corresponds to the entire transfer surface of the bump 16. The quality of the electrode state is determined based on the ratio of the number of photoelectric elements to be performed (hereinafter referred to as the luminance abnormality ratio). The storage unit 17 stores a preset allowable value (allowable ratio) corresponding to the type of board or electronic component. When the luminance abnormality ratio is below the allowable ratio, the storage unit 17 falls below the first threshold value. It is determined that the solder is in a good state, and when the luminance abnormality ratio is higher than the allowable ratio, it is treated as if it is higher than the first threshold value, and it is determined that the solder is in a defective state. Is done.

警告部19は、ペースト転写後のバンプ16が半田不良状態にあるか、バンプ欠落状態にある場合にエラー警告を行う。   The warning unit 19 issues an error warning when the bump 16 after paste transfer is in a solder failure state or in a bump missing state.

次に、電極状態判定装置を用いて電極状態を判定する方法について、図4のフローチャートを参照して説明する。最初に、電子部品実装装置において実装対象となる基板や電子部品の品種に要求される半田量や転写面積等を勘案し、電極状態の判定基準となる第1の閾値TH1と第2の閾値TH2、許容値を設定する(ST1)。次に、ペースト転写後のバンプ16の形成箇所を第2のカメラ11の視野内に位置させ、当該箇所における輝度を検出する(ST2)。次に、検出された輝度と第1の閾値および第2の閾値とを比較する(ST3)。検出された輝度が第1の閾値と第2の閾値との間にあるときは、半田良好状態にあると判定される(ST4)。一方、検出された輝度が第1の閾値を上回っているときには、半田不良状態にあると判定される(ST5)。また、検出された輝度が第2の閾値を下回っているときには、バンプ欠落状態にあると判定される(ST6)。   Next, a method for determining the electrode state using the electrode state determination device will be described with reference to the flowchart of FIG. First, the first threshold value TH1 and the second threshold value TH2 that are the determination criteria of the electrode state are taken into consideration in consideration of the amount of solder, the transfer area, and the like required for the substrate to be mounted and the type of electronic component in the electronic component mounting apparatus. An allowable value is set (ST1). Next, the formation location of the bump 16 after paste transfer is positioned within the field of view of the second camera 11, and the luminance at the location is detected (ST2). Next, the detected luminance is compared with the first threshold value and the second threshold value (ST3). When the detected luminance is between the first threshold value and the second threshold value, it is determined that the solder is in a good state (ST4). On the other hand, when the detected luminance exceeds the first threshold, it is determined that the solder is in a defective state (ST5). On the other hand, when the detected luminance is lower than the second threshold, it is determined that the bump is missing (ST6).

半田不良状態にあると判定されるとその旨のエラー警告が出され(ST7)、転写作業をリトライしたり当該電子部品を実装対象から排除したりする等のエラー処理を行う(ST8)。また、バンプ欠落状態にあると判定された場合もその旨のエラー警告が出され(ST9)、当該電子部品を実装対象から排除したりする等のエラー処理を行う(ST10)。半田良好状態にあると判定(ST4)された電子部品と、転写リトライ(ST8)後に半田良好状態にあると判定(ST4)された電子部品は基板に実装される(ST11)。   If it is determined that the solder is in a defective state, an error warning to that effect is issued (ST7), and error processing such as retrying the transfer operation or removing the electronic component from the mounting target is performed (ST8). Further, when it is determined that the bump is missing, an error warning to that effect is issued (ST9), and error processing such as removing the electronic component from the mounting target is performed (ST10). The electronic component determined to be in a good solder state (ST4) and the electronic component determined to be in a good solder state after transfer retry (ST8) (ST4) are mounted on the substrate (ST11).

本実施の形態の電極状態判定装置と電極状態判定方法によれば、バンプ形成箇所の輝度に基づいて電極欠落を含むペースト転写後の電極状態の良否を判定することができるので、判定に係る装置や工程を簡略化することが可能となり、コストの低減と生産効率の向上を実現することができる。また、電極欠落や半田不良が生じている電子部品を輝度に基づいた定量的な判定により検出し、実装対象から排除しているので、接合信頼性に問題のあ
る電子部品等が実装されることによる製品品質低下を回避することができる。
According to the electrode state determination device and the electrode state determination method of the present embodiment, it is possible to determine the quality of the electrode state after paste transfer including the missing electrode based on the luminance of the bump formation location. And the process can be simplified, and the cost can be reduced and the production efficiency can be improved. In addition, electronic components with missing electrodes or solder defects are detected by quantitative judgment based on luminance and excluded from the mounting target. It is possible to avoid the product quality deterioration due to.

本発明によれば、電極形成箇所の輝度に基づいて電極欠落を含むペースト転写後の電極状態の良否を判定するので、判定に要する装置や工程を簡略化することが可能となり、コストの低減と生産効率の向上を実現することができるという利点を有し、電子部品の実装分野において有用である。   According to the present invention, since the quality of the electrode state after the paste transfer including the missing electrode is determined based on the brightness of the electrode forming portion, it is possible to simplify the apparatus and process required for the determination, and to reduce the cost. It has the advantage that improvement in production efficiency can be realized, and is useful in the field of mounting electronic components.

本発明の実施の形態の電子部品実装装置の全体構成図1 is an overall configuration diagram of an electronic component mounting apparatus according to an embodiment of the present invention. 本発明の実施の形態の電極状態判定装置の構成図The block diagram of the electrode state determination apparatus of embodiment of this invention バンプ形成箇所における輝度と閾値との関係を示した説明図Explanatory drawing showing the relationship between brightness and threshold at bump formation locations 本発明の実施の形態の電極状態判定方法の手順を示すフローチャートThe flowchart which shows the procedure of the electrode state determination method of embodiment of this invention

符号の説明Explanation of symbols

11 第2のカメラ
14 輝度検出部
15 電子部品
16 バンプ
17 記憶部
18 電極状態判定部
TH1 第1の閾値
TH2 第2の閾値
DESCRIPTION OF SYMBOLS 11 2nd camera 14 Luminance detection part 15 Electronic component 16 Bump 17 Memory | storage part 18 Electrode state determination part TH1 1st threshold value TH2 2nd threshold value

Claims (2)

電子部品に形成された電極の状態を判定する電極状態判定装置であって、
前記電極の形成箇所における輝度を検出する輝度検出手段と、
前記電極にペースト状の半田を転写した後の前記電極の形成箇所における輝度と半田を転写する前の前記電極の形成箇所における輝度との間に設定された第1の閾値と、前記電極に半田を転写した後の前記電極の形成箇所における輝度と前記電極が欠落しているときの前記電極の形成箇所における輝度との間に設定された第2の閾値とを予め記憶した記憶手段と、
前記電極の形成箇所における輝度が前記第1の閾値を上回っているときに前記電極は半田不良状態であると判定し、前記電極の形成箇所における輝度が前記第1の閾値と前記第2の閾値の間にあるときに前記電極は半田良好状態であると判定し、前記電極の形成箇所における輝度が前記第2の閾値を下回っているときに前記電極は欠落状態であると判定する判定手段と、
を備えた電極状態判定装置。
An electrode state determination device for determining a state of an electrode formed on an electronic component,
A luminance detecting means for detecting the luminance at the location where the electrode is formed;
A first threshold value set between a luminance at a position where the electrode is formed after the paste-like solder is transferred to the electrode and a luminance at a position where the electrode is formed before the solder is transferred; and soldering to the electrode Storage means for storing in advance a second threshold value set between the luminance at the location where the electrode is formed after transferring and the luminance at the location where the electrode is formed when the electrode is missing,
It is determined that the electrode is in a soldering failure state when the luminance at the electrode formation location exceeds the first threshold value, and the luminance at the electrode formation location is determined by the first threshold value and the second threshold value. Determining means for determining that the electrode is in a good solder state when the voltage is between, and determining that the electrode is in a missing state when luminance at a position where the electrode is formed is lower than the second threshold value; ,
The electrode state determination apparatus provided with.
電子部品に形成された電極の状態を判定する電極状態判定方法であって、
前記電極にペースト状の半田を転写した後の前記電極の形成箇所における輝度を検出する工程と、
前記電極の形成箇所における輝度が第1の閾値を上回っているときに前記電極は半田不良状態であると判定し、前記電極の形成箇所における輝度が第1の閾値と第2の閾値の間にあるときに前記電極は半田良好状態であると判定し、前記電極の形成箇所における輝度が第2の閾値を下回っているときに前記電極は欠落状態であると判定する工程と、
を含む電極状態判定方法。
An electrode state determination method for determining a state of an electrode formed on an electronic component,
Detecting the luminance at the location where the electrode is formed after the paste-like solder is transferred to the electrode;
When the luminance at the electrode formation location exceeds the first threshold, the electrode is determined to be in a poor solder state, and the luminance at the electrode formation location is between the first threshold value and the second threshold value. Determining that the electrode is in a good solder state at a certain time, and determining that the electrode is in a missing state when the luminance at the location where the electrode is formed is below a second threshold;
An electrode state determination method including:
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WO2013150709A1 (en) * 2012-04-03 2013-10-10 パナソニック株式会社 Component mounting method and component mounting device
JP2015088534A (en) * 2013-10-29 2015-05-07 パナソニックIpマネジメント株式会社 Electronic component mounting method
CN112867906A (en) * 2018-10-23 2021-05-28 株式会社富士 Component data, component data generating method, and component mounting machine

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JP2005037243A (en) * 2003-07-15 2005-02-10 Mega Trade:Kk Printed board inspection device

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Publication number Priority date Publication date Assignee Title
WO2013150709A1 (en) * 2012-04-03 2013-10-10 パナソニック株式会社 Component mounting method and component mounting device
JP2015088534A (en) * 2013-10-29 2015-05-07 パナソニックIpマネジメント株式会社 Electronic component mounting method
CN112867906A (en) * 2018-10-23 2021-05-28 株式会社富士 Component data, component data generating method, and component mounting machine

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