JP2008166687A - 発光素子、発光装置並びに電子機器 - Google Patents

発光素子、発光装置並びに電子機器 Download PDF

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Publication number
JP2008166687A
JP2008166687A JP2007176103A JP2007176103A JP2008166687A JP 2008166687 A JP2008166687 A JP 2008166687A JP 2007176103 A JP2007176103 A JP 2007176103A JP 2007176103 A JP2007176103 A JP 2007176103A JP 2008166687 A JP2008166687 A JP 2008166687A
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organic compound
layer
light
electrode
movement
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JP2008166687A5 (enExample
Inventor
Tsunenori Suzuki
恒徳 鈴木
Tetsushi Seo
哲史 瀬尾
Ryoji Nomura
亮二 野村
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/18—Carrier blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H10K50/157—Hole transporting layers between the light-emitting layer and the cathode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H10K50/167—Electron transporting layers between the light-emitting layer and the anode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/10—Triplet emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H10K50/155—Hole transporting layers comprising dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/30—Doping active layers, e.g. electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
    • H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H10K85/633—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising polycyclic condensed aromatic hydrocarbons as substituents on the nitrogen atom
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6574—Polycyclic condensed heteroaromatic hydrocarbons comprising only oxygen in the heteroaromatic polycondensed ring system, e.g. cumarine dyes

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
JP2007176103A 2006-07-04 2007-07-04 発光素子、発光装置並びに電子機器 Withdrawn JP2008166687A (ja)

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JP2007176103A JP2008166687A (ja) 2006-07-04 2007-07-04 発光素子、発光装置並びに電子機器

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JP2006184350 2006-07-04
JP2006327609 2006-12-04
JP2007176103A JP2008166687A (ja) 2006-07-04 2007-07-04 発光素子、発光装置並びに電子機器

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JP2012230418A Division JP5628876B2 (ja) 2006-07-04 2012-10-18 発光素子

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JP2008166687A true JP2008166687A (ja) 2008-07-17
JP2008166687A5 JP2008166687A5 (enExample) 2010-08-12

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JP2012230418A Expired - Fee Related JP5628876B2 (ja) 2006-07-04 2012-10-18 発光素子
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US (5) US7902742B2 (enExample)
EP (2) EP1876659B1 (enExample)
JP (3) JP2008166687A (enExample)
KR (3) KR101434283B1 (enExample)
CN (2) CN101101975B (enExample)
TW (2) TWI548306B (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010044342A1 (ja) * 2008-10-15 2010-04-22 コニカミノルタホールディングス株式会社 有機エレクトロルミネッセンス素子、有機エレクトロルミネッセンス素子の製造方法、白色有機エレクトロルミネッセンス素子、表示装置及び照明装置
JP2015201655A (ja) * 2008-12-01 2015-11-12 株式会社半導体エネルギー研究所 発光素子、発光装置、電子機器、照明装置
KR20160067545A (ko) * 2014-12-04 2016-06-14 엘지디스플레이 주식회사 유기전계발광소자 및 이를 구비한 표시소자
KR20160067598A (ko) * 2014-12-04 2016-06-14 엘지디스플레이 주식회사 유기전계발광소자 및 이를 구비한 표시소자

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EP1876658A3 (en) * 2006-07-04 2014-06-25 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and electronic device
EP2087063B1 (en) 2006-11-30 2016-10-19 Semiconductor Energy Laboratory Co, Ltd. Light-emitting device
US9397308B2 (en) * 2006-12-04 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Light emitting element, light emitting device, and electronic device
KR101426717B1 (ko) * 2006-12-04 2014-08-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자, 발광 장치 및 전자 기기
JP5530608B2 (ja) 2007-09-13 2014-06-25 株式会社半導体エネルギー研究所 発光素子および発光装置
US8384283B2 (en) 2007-09-20 2013-02-26 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and electronic device
US8115382B2 (en) 2007-09-20 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and electronic device, comprising controlled carrier transport
US9876187B2 (en) 2007-09-27 2018-01-23 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and electronic appliance
WO2009051248A1 (en) * 2007-10-19 2009-04-23 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and electronic device
EP2075860A3 (en) * 2007-12-28 2013-03-20 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device and electronic device
EP2091097A3 (en) * 2008-02-13 2013-05-15 Semiconductor Energy Laboratory Co, Ltd. Light-emitting element, light-emitting device, and electronic device
WO2009116605A1 (en) * 2008-03-18 2009-09-24 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device and electronic device
WO2009116547A1 (en) 2008-03-18 2009-09-24 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device and electronic device
KR20140069342A (ko) 2008-05-16 2014-06-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광소자 및 전자기기
CN104377308B (zh) * 2008-10-28 2019-08-06 密执安州立大学董事会 具有单独的红色、绿色和蓝色子元件的堆叠式白色oled
TWI486097B (zh) 2008-12-01 2015-05-21 Semiconductor Energy Lab 發光元件、發光裝置、照明裝置、及電子裝置
KR101932823B1 (ko) * 2008-12-12 2018-12-27 유니버셜 디스플레이 코포레이션 도핑된 정공 수송층을 통한 ｏｌｅｄ 안정성 향상
CN101752514B (zh) * 2008-12-17 2015-11-25 株式会社半导体能源研究所 发光元件、照明装置、发光装置以及电子设备
JP2012199231A (ja) * 2011-03-04 2012-10-18 Semiconductor Energy Lab Co Ltd 表示装置
EP2690682A4 (en) * 2011-03-22 2014-10-01 Oceans King Lighting Science ORGANIC ELECTROLUMINESCENCE DEVICE AND CONDUCTIVE BASIS THEREFOR
US9419239B2 (en) 2011-07-08 2016-08-16 Semiconductor Energy Laboratory Co., Ltd. Composite material, light-emitting element, light-emitting device, electronic device, lighting device, and organic compound
KR20130050713A (ko) * 2011-11-08 2013-05-16 삼성디스플레이 주식회사 유기 발광 소자, 이의 제조 방법 및 이를 포함하는 평판 표시 장치
JP6158543B2 (ja) * 2012-04-13 2017-07-05 株式会社半導体エネルギー研究所 発光素子、発光装置、電子機器、および照明装置
JP6158542B2 (ja) * 2012-04-13 2017-07-05 株式会社半導体エネルギー研究所 発光素子、発光装置、電子機器、および照明装置
TWI651878B (zh) 2012-08-03 2019-02-21 日商半導體能源研究所股份有限公司 發光元件、發光裝置、顯示裝置、電子裝置及照明設備
US9666822B2 (en) 2013-12-17 2017-05-30 The Regents Of The University Of Michigan Extended OLED operational lifetime through phosphorescent dopant profile management
WO2016068585A1 (ko) * 2014-10-27 2016-05-06 주식회사 엘지화학 유기 전계 발광 소자
KR102343655B1 (ko) 2014-12-24 2021-12-27 삼성디스플레이 주식회사 유기 발광 소자 및 이를 포함하는 유기 발광 표시 장치
KR102658366B1 (ko) 2016-07-28 2024-04-18 삼성디스플레이 주식회사 유기 발광 소자
CN110010773B (zh) * 2018-01-05 2023-08-18 固安鼎材科技有限公司 一种调节载流子迁移率的发光层及有机电致发光器件
CN108565352B (zh) 2018-04-19 2020-02-21 京东方科技集团股份有限公司 有机发光二极管显示面板及其制造方法、显示装置
TWI892601B (zh) * 2019-01-22 2025-08-01 日商半導體能源研究所股份有限公司 發光器件、發光裝置、電子裝置及照明設備

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US8384283B2 (en) 2007-09-20 2013-02-26 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and electronic device
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KR20140069342A (ko) 2008-05-16 2014-06-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광소자 및 전자기기
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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010044342A1 (ja) * 2008-10-15 2010-04-22 コニカミノルタホールディングス株式会社 有機エレクトロルミネッセンス素子、有機エレクトロルミネッセンス素子の製造方法、白色有機エレクトロルミネッセンス素子、表示装置及び照明装置
JP2015201655A (ja) * 2008-12-01 2015-11-12 株式会社半導体エネルギー研究所 発光素子、発光装置、電子機器、照明装置
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US20140070201A1 (en) 2014-03-13
CN102117892A (zh) 2011-07-06
KR101424694B1 (ko) 2014-08-01
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US8314548B2 (en) 2012-11-20
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JP5925269B2 (ja) 2016-05-25
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US20110133172A1 (en) 2011-06-09
TW201119495A (en) 2011-06-01
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US7902742B2 (en) 2011-03-08
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US20080007165A1 (en) 2008-01-10
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