JP2008165204A - 液晶表示装置及びその製造方法 - Google Patents
液晶表示装置及びその製造方法 Download PDFInfo
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- JP2008165204A JP2008165204A JP2007308848A JP2007308848A JP2008165204A JP 2008165204 A JP2008165204 A JP 2008165204A JP 2007308848 A JP2007308848 A JP 2007308848A JP 2007308848 A JP2007308848 A JP 2007308848A JP 2008165204 A JP2008165204 A JP 2008165204A
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- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 62
- 238000000034 method Methods 0.000 title claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 229910052751 metal Inorganic materials 0.000 claims description 30
- 239000002184 metal Substances 0.000 claims description 30
- 238000004519 manufacturing process Methods 0.000 claims description 16
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 230000007547 defect Effects 0.000 abstract description 4
- 239000011521 glass Substances 0.000 description 40
- 239000010410 layer Substances 0.000 description 27
- 239000010408 film Substances 0.000 description 24
- 230000001681 protective effect Effects 0.000 description 19
- 210000002858 crystal cell Anatomy 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 238000000206 photolithography Methods 0.000 description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- SXZSFWHOSHAKMN-UHFFFAOYSA-N 2,3,4,4',5-Pentachlorobiphenyl Chemical compound C1=CC(Cl)=CC=C1C1=CC(Cl)=C(Cl)C(Cl)=C1Cl SXZSFWHOSHAKMN-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 102100027310 Bromodomain adjacent to zinc finger domain protein 1A Human genes 0.000 description 3
- 101000937778 Homo sapiens Bromodomain adjacent to zinc finger domain protein 1A Proteins 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 238000005304 joining Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 239000000565 sealant Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910001182 Mo alloy Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 210000004027 cell Anatomy 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- -1 acrylic organic compound Chemical class 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13452—Conductors connecting driver circuitry and terminals of panels
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
- H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
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- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
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- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
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Abstract
【解決手段】互いに交差する複数のデータラインDL及び複数のゲートラインGLを有する液晶パネル106と、データラインDLにデータ電圧を供給するデータ駆動回路IC110と、ゲートラインGLにスキャンパルスを供給するゲート駆動回路IC108と、駆動回路ICの両側かつ液晶パネル106の基板上に配置されるダミーパッド群120とが設けられるる。
【選択図】図4
Description
114 PCB、120 ダミーパッド群。
Claims (10)
- 互いに交差する複数のデータライン及び複数のゲートラインを有する液晶パネルと、
前記複数のデータラインにデータ電圧を供給するデータ駆動回路と、
前記複数のゲートラインにスキャンパルスを供給するゲート駆動回路と、
前記データ駆動回路の両側かつ前記液晶パネルの基板上に配置される第1ダミーパッドとを備え、
前記データ駆動回路は、第1異方性導電フィルムによって前記基板上に接合され、前記第1異方性導電フィルムの両側は、前記第1ダミーパッドに接合される
ことを特徴とする液晶表示装置。 - 前記ゲート駆動回路の両側かつ前記液晶パネルの基板上に配置される第2ダミーパッドをさらに備え、
前記ゲート駆動回路は、第2異方性導電フィルムによって前記基板上に接合され、前記第2異方性導電フィルムの両側は、前記第2ダミーパッドに接合される
ことを特徴とする請求項1記載の液晶表示装置。 - 前記第1又は第2ダミーパッドは、前記複数のデータラインの金属と同じ金属である
ことを特徴とする請求項1又は2記載の液晶表示装置。 - 前記第1又は第2ダミーパッドは、モリブデン、チタニウム、タンタリウムのうち、少なくともいずれか一つを含む
ことを特徴とする請求項1又は2記載の液晶表示装置。 - 前記第1又は第2ダミーパッドの高さは、前記第1又は第2異方性導電フィルムの高さより高い
ことを特徴とする請求項1又は2記載の液晶表示装置。 - 基板上に複数のゲートラインを形成する工程と、
前記複数のゲートライン上に絶縁層を形成する工程と、
前記複数のゲートラインと交差する複数のデータラインを形成すると共に、データ駆動回路の接合部分の両側に配置される第1ダミーパッドを前記絶縁層上に形成する工程と、
前記データ駆動回路の接合部分及び前記第1ダミーパッドに第1異方性導電フィルムを接合する工程と、
前記複数のデータラインにデータ電圧を供給するデータ駆動回路を前記第1異方性導電フィルム上で熱圧着する工程と
を含むことを特徴とする液晶表示装置の製造方法。 - ゲート駆動回路の接合部分の両側に配置される第2ダミーパッドを前記絶縁層上に形成する工程と、
前記ゲート駆動回路の接合部分及び前記第2ダミーパッドに第2異方性導電フィルムを接合する工程と、
前記複数のゲートラインにスキャンパルスを供給するゲート駆動回路を前記第2異方性導電フィルム上で熱圧着する工程とをさらに含む
ことを特徴とする請求項6記載の液晶表示装置の製造方法。 - 前記第1又は第2ダミーパッドは、前記複数のデータラインの金属と同じ金属である
ことを特徴とする請求項6又は7記載の液晶表示装置の製造方法。 - 前記第1又は第2ダミーパッドは、モリブデン、チタニウム、タンタリウムのうち、少なくともいずれか一つを含む
ことを特徴とする請求項6又は7記載の液晶表示装置の製造方法。 - 前記第1又は第2ダミーパッドの高さは、前記第1又は第2異方性導電フィルムの高さより高い
ことを特徴とする請求項6又は7記載の液晶表示装置の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2006-0134510 | 2006-12-27 | ||
KR1020060134510A KR20080060442A (ko) | 2006-12-27 | 2006-12-27 | 액정표시장치와 그 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008165204A true JP2008165204A (ja) | 2008-07-17 |
JP4707704B2 JP4707704B2 (ja) | 2011-06-22 |
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Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007308848A Expired - Fee Related JP4707704B2 (ja) | 2006-12-27 | 2007-11-29 | 液晶表示装置及びその製造方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US7982844B2 (ja) |
JP (1) | JP4707704B2 (ja) |
KR (1) | KR20080060442A (ja) |
CN (1) | CN101211043B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013218126A (ja) * | 2012-04-10 | 2013-10-24 | Japan Display Inc | 表示装置 |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101286544B1 (ko) * | 2008-07-11 | 2013-07-17 | 엘지디스플레이 주식회사 | 액정표시장치 및 그 제조방법 |
KR101432126B1 (ko) * | 2008-07-23 | 2014-08-21 | 삼성디스플레이 주식회사 | 유기전계발광 표시장치 |
KR101648714B1 (ko) | 2009-02-18 | 2016-08-18 | 삼성디스플레이 주식회사 | 액정 표시 장치 및 이를 포함하는 표시 장치 세트 |
KR20110014033A (ko) * | 2009-08-04 | 2011-02-10 | 삼성에스디아이 주식회사 | 플라즈마 디스플레이 장치 |
JP2012089672A (ja) * | 2010-10-19 | 2012-05-10 | Hitachi High-Technologies Corp | Fpdモジュールの組立装置 |
KR101853454B1 (ko) * | 2011-01-21 | 2018-05-02 | 삼성디스플레이 주식회사 | 표시 장치 |
KR101854698B1 (ko) * | 2011-12-02 | 2018-05-08 | 엘지디스플레이 주식회사 | 어레이 기판 및 이의 제조방법 |
KR102115174B1 (ko) * | 2012-06-18 | 2020-05-27 | 삼성디스플레이 주식회사 | 표시 패널 |
CN103839907B (zh) | 2012-11-21 | 2016-08-31 | 瀚宇彩晶股份有限公司 | 主动元件阵列基板及其电路堆叠结构 |
JP6130721B2 (ja) * | 2013-04-26 | 2017-05-17 | 株式会社ジャパンディスプレイ | 平面表示装置 |
CN103472645A (zh) * | 2013-09-24 | 2013-12-25 | 京东方科技集团股份有限公司 | 一种阵列基板及其制造方法、显示装置 |
CN104516163B (zh) * | 2015-01-15 | 2018-02-16 | 京东方科技集团股份有限公司 | 一种显示基板和显示装置 |
KR20180027693A (ko) | 2016-09-06 | 2018-03-15 | 삼성디스플레이 주식회사 | 표시 장치 |
US10692815B2 (en) * | 2017-08-17 | 2020-06-23 | Novatek Microelectronics Corp. | Chip on glass package assembly |
US20200363845A1 (en) * | 2017-11-24 | 2020-11-19 | Huawei Technologies Co., Ltd. | Display Arrangement and Thereto Related Integrated Circuit and Method and User Equipment |
KR102477230B1 (ko) * | 2018-01-25 | 2022-12-13 | 삼성디스플레이 주식회사 | 표시 장치 |
KR102026422B1 (ko) * | 2018-11-16 | 2019-09-30 | 삼성디스플레이 주식회사 | 표시 패널 |
KR20200115807A (ko) | 2019-03-26 | 2020-10-08 | 삼성디스플레이 주식회사 | 표시 장치 |
KR102133221B1 (ko) * | 2019-09-23 | 2020-07-14 | 삼성디스플레이 주식회사 | 표시 패널 |
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2006
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- 2007-11-16 CN CN2007101869989A patent/CN101211043B/zh not_active Expired - Fee Related
- 2007-11-29 US US11/987,393 patent/US7982844B2/en not_active Expired - Fee Related
- 2007-11-29 JP JP2007308848A patent/JP4707704B2/ja not_active Expired - Fee Related
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2011
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JP2013218126A (ja) * | 2012-04-10 | 2013-10-24 | Japan Display Inc | 表示装置 |
Also Published As
Publication number | Publication date |
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US20110244752A1 (en) | 2011-10-06 |
KR20080060442A (ko) | 2008-07-02 |
US8059250B2 (en) | 2011-11-15 |
US7982844B2 (en) | 2011-07-19 |
US20080158466A1 (en) | 2008-07-03 |
JP4707704B2 (ja) | 2011-06-22 |
CN101211043A (zh) | 2008-07-02 |
CN101211043B (zh) | 2011-05-11 |
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