JP2008163451A5 - - Google Patents

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Publication number
JP2008163451A5
JP2008163451A5 JP2007280772A JP2007280772A JP2008163451A5 JP 2008163451 A5 JP2008163451 A5 JP 2008163451A5 JP 2007280772 A JP2007280772 A JP 2007280772A JP 2007280772 A JP2007280772 A JP 2007280772A JP 2008163451 A5 JP2008163451 A5 JP 2008163451A5
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JP
Japan
Prior art keywords
magnetic
magnetic pole
magnetron
total
polarity
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JP2007280772A
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English (en)
Japanese (ja)
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JP2008163451A (ja
JP5221929B2 (ja
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Priority claimed from US11/553,880 external-priority patent/US7767064B2/en
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Publication of JP2008163451A publication Critical patent/JP2008163451A/ja
Publication of JP2008163451A5 publication Critical patent/JP2008163451A5/ja
Application granted granted Critical
Publication of JP5221929B2 publication Critical patent/JP5221929B2/ja
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JP2007280772A 2006-10-27 2007-10-29 位置制御型デュアルマグネトロン Active JP5221929B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/553,880 2006-10-27
US11/553,880 US7767064B2 (en) 2006-10-27 2006-10-27 Position controlled dual magnetron

Publications (3)

Publication Number Publication Date
JP2008163451A JP2008163451A (ja) 2008-07-17
JP2008163451A5 true JP2008163451A5 (cg-RX-API-DMAC10.html) 2010-10-07
JP5221929B2 JP5221929B2 (ja) 2013-06-26

Family

ID=39328815

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007280772A Active JP5221929B2 (ja) 2006-10-27 2007-10-29 位置制御型デュアルマグネトロン

Country Status (5)

Country Link
US (1) US7767064B2 (cg-RX-API-DMAC10.html)
JP (1) JP5221929B2 (cg-RX-API-DMAC10.html)
KR (1) KR100912756B1 (cg-RX-API-DMAC10.html)
CN (1) CN101195906B (cg-RX-API-DMAC10.html)
TW (1) TWI367265B (cg-RX-API-DMAC10.html)

Families Citing this family (34)

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US9771648B2 (en) 2004-08-13 2017-09-26 Zond, Inc. Method of ionized physical vapor deposition sputter coating high aspect-ratio structures
US8021527B2 (en) * 2005-09-14 2011-09-20 Applied Materials, Inc. Coaxial shafts for radial positioning of rotating magnetron
CN102439697B (zh) * 2009-04-03 2015-08-19 应用材料公司 高压rf-dc溅射及改善此工艺的膜均匀性和阶梯覆盖率的方法
CN101994092B (zh) * 2009-08-28 2012-10-31 北京北方微电子基地设备工艺研究中心有限责任公司 磁控管装置
US8624496B2 (en) 2009-10-20 2014-01-07 Muons, Inc. Phase and frequency locked magnetron
US9249082B2 (en) 2010-02-09 2016-02-02 King Abdulaziz City for Science and Technology (KACST) Synthesis of dimethyl carbonate from carbon dioxide and methanol
US20120024229A1 (en) * 2010-08-02 2012-02-02 Applied Materials, Inc. Control of plasma profile using magnetic null arrangement by auxiliary magnets
CN102560387B (zh) * 2010-12-10 2014-05-28 北京北方微电子基地设备工艺研究中心有限责任公司 磁控源和磁控溅射设备、以及磁控溅射方法
US20120181166A1 (en) * 2011-01-14 2012-07-19 Applied Materials, Inc. Pvd process with synchronized process parameters and magnet position
US20130015055A1 (en) * 2011-07-11 2013-01-17 Hariharakeshava Sarpangala Hegde Dual plasma source systems and methods for reactive plasma deposition
CN102994966B (zh) * 2011-09-16 2015-02-25 北京北方微电子基地设备工艺研究中心有限责任公司 扫描机构、磁控源和磁控溅射设备
EP2938752A4 (en) * 2012-12-28 2016-05-25 Sputtering Components Inc PLASMA ACTIVATED CHEMICAL VAPOR DEPOSITION SOURCE (PECVD)
EP2778253B1 (de) * 2013-02-26 2018-10-24 Oerlikon Surface Solutions AG, Pfäffikon Zylinderförmige Verdampfungsquelle
US9281167B2 (en) 2013-02-26 2016-03-08 Applied Materials, Inc. Variable radius dual magnetron
US9812303B2 (en) * 2013-03-01 2017-11-07 Applied Materials, Inc. Configurable variable position closed track magnetron
KR102158659B1 (ko) 2013-08-14 2020-09-22 어플라이드 머티어리얼스, 인코포레이티드 캡슐화된 마그네트론
US9831075B2 (en) 2013-09-17 2017-11-28 Applied Materials, Inc. Source magnet for improved resputtering uniformity in direct current (DC) physical vapor deposition (PVD) processes
JP6471000B2 (ja) * 2015-02-24 2019-02-13 株式会社アルバック マグネトロンスパッタリング装置用の磁石ユニット及びこの磁石ユニットを用いたスパッタリング方法
CN107799375B (zh) * 2016-08-30 2019-10-11 北京北方华创微电子装备有限公司 一种磁控元件和磁控溅射装置
CN108950499B (zh) * 2017-05-18 2023-10-13 北京北方华创微电子装备有限公司 磁控管旋转结构、磁控管组件及反应腔室
US10513432B2 (en) * 2017-07-31 2019-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. Anti-stiction process for MEMS device
CN109841468B (zh) * 2017-11-28 2021-06-08 北京北方华创微电子装备有限公司 磁控管组件、磁控溅射腔室及半导体加工设备
TWI773904B (zh) 2018-06-19 2022-08-11 美商應用材料股份有限公司 具有多陰極的沉積系統
US11462394B2 (en) 2018-09-28 2022-10-04 Taiwan Semiconductor Manufacturing Co., Ltd. Physical vapor deposition apparatus and method thereof
US11846013B2 (en) * 2020-07-31 2023-12-19 Applied Materials, Inc. Methods and apparatus for extended chamber for through silicon via deposition
KR102240243B1 (ko) * 2020-11-19 2021-04-14 주식회사 바코솔루션 스퍼터링 건
KR102631073B1 (ko) * 2021-01-13 2024-01-30 에이피시스템 주식회사 스퍼터링 장치 및 스퍼터링 방법
JP7581953B2 (ja) * 2021-02-24 2024-11-13 東京エレクトロン株式会社 スパッタリング処理を行う装置、及び方法
US12091752B2 (en) * 2021-03-18 2024-09-17 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method of manufacturing interconnect structures
CN116783324B (zh) * 2021-05-21 2025-11-28 株式会社爱发科 磁控溅射装置用阴极单元及磁控溅射装置
CN115679278B (zh) * 2021-07-29 2025-01-14 北京北方华创微电子装备有限公司 一种双磁控管溅射装置及半导体工艺设备
US12609288B1 (en) 2022-02-03 2026-04-21 Seagate Technology Llc Sputtering targets, and related apparatuses and methods
CN114774872B (zh) * 2022-04-29 2023-09-08 北京北方华创微电子装备有限公司 磁控管装置及磁控溅射设备
CN115305454B (zh) * 2022-08-26 2023-09-08 北京北方华创微电子装备有限公司 磁控管装置及磁控溅射设备

Family Cites Families (9)

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Publication number Priority date Publication date Assignee Title
JPH03229867A (ja) * 1990-02-02 1991-10-11 Nec Corp マグネトロン型スパッタ装置
JPH04154966A (ja) * 1990-10-16 1992-05-27 Hitachi Ltd プラズマ処理方法および装置
DE4128340C2 (de) * 1991-08-27 1999-09-23 Leybold Ag Zerstäubungskathodenanordnung nach dem Magnetron-Prinzip für die Beschichtung einer kreisringförmigen Beschichtungsfläche
JPH11340165A (ja) * 1998-05-20 1999-12-10 Applied Materials Inc スパッタリング装置及びマグネトロンユニット
KR20000002614A (ko) * 1998-06-22 2000-01-15 김덕중 스퍼터링 장치
US6228236B1 (en) * 1999-10-22 2001-05-08 Applied Materials, Inc. Sputter magnetron having two rotation diameters
KR100439474B1 (ko) * 2001-09-12 2004-07-09 삼성전자주식회사 스퍼터링 장치
US7018515B2 (en) * 2004-03-24 2006-03-28 Applied Materials, Inc. Selectable dual position magnetron
US7686928B2 (en) 2004-09-23 2010-03-30 Applied Materials, Inc. Pressure switched dual magnetron

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